JP5522176B2 - 半導体素子基板 - Google Patents

半導体素子基板 Download PDF

Info

Publication number
JP5522176B2
JP5522176B2 JP2011534216A JP2011534216A JP5522176B2 JP 5522176 B2 JP5522176 B2 JP 5522176B2 JP 2011534216 A JP2011534216 A JP 2011534216A JP 2011534216 A JP2011534216 A JP 2011534216A JP 5522176 B2 JP5522176 B2 JP 5522176B2
Authority
JP
Japan
Prior art keywords
semiconductor element
acid
element substrate
group
ene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011534216A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2011040324A1 (ja
Inventor
幸枝 磯貝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Priority to JP2011534216A priority Critical patent/JP5522176B2/ja
Publication of JPWO2011040324A1 publication Critical patent/JPWO2011040324A1/ja
Application granted granted Critical
Publication of JP5522176B2 publication Critical patent/JP5522176B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
    • C08G2261/332—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3324—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms derived from norbornene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/41—Organometallic coupling reactions
    • C08G2261/418—Ring opening metathesis polymerisation [ROMP]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2011534216A 2009-09-29 2010-09-24 半導体素子基板 Active JP5522176B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011534216A JP5522176B2 (ja) 2009-09-29 2010-09-24 半導体素子基板

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009224880 2009-09-29
JP2009224880 2009-09-29
JP2011534216A JP5522176B2 (ja) 2009-09-29 2010-09-24 半導体素子基板
PCT/JP2010/066529 WO2011040324A1 (ja) 2009-09-29 2010-09-24 半導体素子基板

Publications (2)

Publication Number Publication Date
JPWO2011040324A1 JPWO2011040324A1 (ja) 2013-02-28
JP5522176B2 true JP5522176B2 (ja) 2014-06-18

Family

ID=43826145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011534216A Active JP5522176B2 (ja) 2009-09-29 2010-09-24 半導体素子基板

Country Status (5)

Country Link
JP (1) JP5522176B2 (ko)
KR (1) KR20120082412A (ko)
CN (1) CN102668046B (ko)
TW (1) TWI417658B (ko)
WO (1) WO2011040324A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5700547B2 (ja) * 2011-05-30 2015-04-15 国立大学法人京都大学 バイオチップ形成用感光性樹脂組成物、及びバイオチップ
JP6155823B2 (ja) * 2012-07-12 2017-07-05 Jsr株式会社 有機ｅｌ素子、感放射線性樹脂組成物および硬化膜
JP6164218B2 (ja) * 2012-08-13 2017-07-19 日本ゼオン株式会社 薄膜トランジスタ
JP6248561B2 (ja) * 2013-11-14 2017-12-20 日本ゼオン株式会社 感放射線性樹脂組成物、及び積層体
EP3121652B1 (en) * 2014-03-20 2019-09-04 Zeon Corporation Radiation-sensitive resin composition and electronic component
JP6601394B2 (ja) * 2014-04-22 2019-11-06 日本ゼオン株式会社 感放射線性樹脂組成物、樹脂膜、および電子部品
JP6947027B2 (ja) * 2015-02-19 2021-10-13 日本ゼオン株式会社 樹脂組成物、樹脂膜、及び電子部品
PT3434731T (pt) * 2016-03-23 2021-08-09 Zeon Corp Composição de resina, filme de resina, e componente electrónico

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010006759A1 (en) * 1998-09-08 2001-07-05 Charles R. Shipley Jr. Radiation sensitive compositions
JP4576797B2 (ja) * 2002-03-28 2010-11-10 東レ株式会社 ポジ型感光性樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
JP2003335826A (ja) * 2002-05-20 2003-11-28 Jsr Corp 共重合体とその製造方法および感放射線性樹脂組成物
WO2004029720A1 (ja) * 2002-09-30 2004-04-08 Zeon Corporation 感放射線性樹脂組成物、樹脂パターン膜とその形成方法、及び樹脂パターン膜の利用
JP2004190008A (ja) * 2002-11-08 2004-07-08 Toray Ind Inc 樹脂組成物とそれを用いた絶縁膜、半導体装置及び有機電界発光素子
KR101173709B1 (ko) * 2004-03-31 2012-08-13 니폰 제온 가부시키가이샤 감방사선 조성물, 적층체 및 그의 제조방법, 및 전자 부품
JP4876597B2 (ja) * 2005-03-30 2012-02-15 日本ゼオン株式会社 感放射線性樹脂組成物の調製方法
WO2008123233A1 (ja) * 2007-03-30 2008-10-16 Zeon Corporation 感放射線樹脂組成物、アクティブマトリックス基板及びその製造方法

Also Published As

Publication number Publication date
TWI417658B (zh) 2013-12-01
CN102668046A (zh) 2012-09-12
WO2011040324A1 (ja) 2011-04-07
JPWO2011040324A1 (ja) 2013-02-28
KR20120082412A (ko) 2012-07-23
CN102668046B (zh) 2014-12-10
TW201129858A (en) 2011-09-01

Similar Documents

Publication Publication Date Title
JP5561271B2 (ja) 樹脂組成物、樹脂膜及び電子部品
JP5522176B2 (ja) 半導体素子基板
JP5488460B2 (ja) 感放射線樹脂組成物、積層体及びその製造方法ならびに半導体デバイス
JP6947027B2 (ja) 樹脂組成物、樹脂膜、及び電子部品
JP5747908B2 (ja) 半導体素子基板の製造方法
JP5640864B2 (ja) ネガ型感光性樹脂組成物および電子部品
JPWO2012165448A1 (ja) 樹脂組成物および半導体素子基板
JPWO2012133617A1 (ja) 樹脂組成物および半導体素子基板
JP5589286B2 (ja) 薄膜トランジスタの製造方法、及び薄膜トランジスタ並びに表示装置
JP5413097B2 (ja) 感放射線性樹脂組成物、及び積層体
JP6248561B2 (ja) 感放射線性樹脂組成物、及び積層体
JP6183029B2 (ja) ネガ型感光性樹脂組成物および電子部品
JP2011075610A (ja) 感放射線性樹脂組成物、及び積層体
JP2012049300A (ja) 半導体素子基板
WO2017163981A1 (ja) 樹脂組成物、樹脂膜、及び電子部品
JP2012171993A (ja) 樹脂組成物および半導体素子基板
JP2012171994A (ja) 樹脂組成物および半導体素子基板
JP2011105688A (ja) 単量体の精製方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130312

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140311

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140324

R150 Certificate of patent or registration of utility model

Ref document number: 5522176

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250