JP5521012B2 - フォトリソグラフシステムに用いられるプログラム可能な照明装置 - Google Patents
フォトリソグラフシステムに用いられるプログラム可能な照明装置 Download PDFInfo
- Publication number
- JP5521012B2 JP5521012B2 JP2012179995A JP2012179995A JP5521012B2 JP 5521012 B2 JP5521012 B2 JP 5521012B2 JP 2012179995 A JP2012179995 A JP 2012179995A JP 2012179995 A JP2012179995 A JP 2012179995A JP 5521012 B2 JP5521012 B2 JP 5521012B2
- Authority
- JP
- Japan
- Prior art keywords
- field
- reticle
- exposure
- programmable
- micromirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/199,112 US8823921B2 (en) | 2011-08-19 | 2011-08-19 | Programmable illuminator for a photolithography system |
| US13/199,112 | 2011-08-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013048237A JP2013048237A (ja) | 2013-03-07 |
| JP2013048237A5 JP2013048237A5 (enExample) | 2014-03-06 |
| JP5521012B2 true JP5521012B2 (ja) | 2014-06-11 |
Family
ID=47712432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012179995A Active JP5521012B2 (ja) | 2011-08-19 | 2012-08-15 | フォトリソグラフシステムに用いられるプログラム可能な照明装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8823921B2 (enExample) |
| JP (1) | JP5521012B2 (enExample) |
| KR (1) | KR20130020876A (enExample) |
| CN (1) | CN102955376B (enExample) |
| SG (2) | SG10201503937XA (enExample) |
| TW (1) | TWI497229B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150201831A1 (en) * | 2012-08-31 | 2015-07-23 | Tianjin Bhy Photoelectric Technology Co., Ltd. | Portable perimeter for static multi-point synchronous thresholding screening and single-point thresholding detection |
| EP2876499B1 (en) * | 2013-11-22 | 2017-05-24 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| CN104749902B (zh) * | 2013-12-31 | 2017-02-15 | 上海微电子装备有限公司 | 掩模板面型整形装置 |
| DE102014219112A1 (de) * | 2014-09-23 | 2016-03-24 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie sowie Hohlwellenleiter-Komponente hierfür |
| CN106707693B (zh) * | 2015-07-29 | 2019-03-12 | 上海微电子装备(集团)股份有限公司 | 一种led光源照明装置 |
| CN106933049B (zh) * | 2015-12-30 | 2020-06-16 | 上海微电子装备(集团)股份有限公司 | 一种用于半导体光刻的曝光系统与曝光方法 |
| CN108628103B (zh) * | 2017-03-15 | 2021-05-07 | 中芯国际集成电路制造(上海)有限公司 | 光强均匀性自动调节装置及调整方法 |
| TWI627440B (zh) * | 2017-05-17 | 2018-06-21 | 力晶科技股份有限公司 | 影像亮度重配模組及影像亮度重配方法 |
| DE102018123328B4 (de) * | 2018-09-21 | 2022-09-08 | Carl Zeiss Smt Gmbh | Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems |
| EP4018264A1 (en) * | 2019-08-19 | 2022-06-29 | ASML Netherlands B.V. | Micromirror arrays |
| US11366307B2 (en) | 2020-08-27 | 2022-06-21 | Kla Corporation | Programmable and reconfigurable mask with MEMS micro-mirror array for defect detection |
| US11960211B2 (en) * | 2021-07-09 | 2024-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical lithography system and method of using the same |
| DE102024205430A1 (de) * | 2024-06-13 | 2025-12-18 | Carl Zeiss Smt Gmbh | Optomechanisches System für die Projektionslithographie |
| US20260050221A1 (en) * | 2024-08-15 | 2026-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithographic system, and method of using the same to perform lithography |
| CN118818921A (zh) * | 2024-08-30 | 2024-10-22 | 新毅东(北京)科技有限公司 | 光刻机的曝光剂量控制架构 |
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| JPH02980A (ja) * | 1988-03-14 | 1990-01-05 | Mitsubishi Electric Corp | レジストパターニング工程を備えた半導体装置の製造方法およびその製造方法に用いられる光照射装置 |
| JPH0950951A (ja) * | 1995-08-04 | 1997-02-18 | Nikon Corp | リソグラフィ方法およびリソグラフィ装置 |
| DE10053587A1 (de) * | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
| KR100584538B1 (ko) | 1999-11-04 | 2006-05-30 | 삼성전자주식회사 | 마이크로미러 가동장치를 채용한 반사형 프로젝터 |
| JP2001222064A (ja) | 2000-02-08 | 2001-08-17 | Ibm Japan Ltd | 照光制御装置、プロジェクタ、および照光制御方法 |
| US6552779B2 (en) * | 2000-05-25 | 2003-04-22 | Ball Semiconductor, Inc. | Flying image of a maskless exposure system |
| JP2002036373A (ja) * | 2000-07-25 | 2002-02-05 | Sanyo Electric Co Ltd | 光造形装置 |
| US6863401B2 (en) | 2001-06-30 | 2005-03-08 | Texas Instruments Incorporated | Illumination system |
| US6919951B2 (en) | 2001-07-27 | 2005-07-19 | Canon Kabushiki Kaisha | Illumination system, projection exposure apparatus and device manufacturing method |
| SE0103006D0 (sv) * | 2001-09-10 | 2001-09-10 | Micronic Lasersystems Ab | Homogenization of a spatially coherent radiation beam and reading/writing of a pattern on a workpiece |
| US6819490B2 (en) | 2001-09-10 | 2004-11-16 | Micronic Laser Systems Ab | Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece |
| JP2003324028A (ja) * | 2002-04-30 | 2003-11-14 | Jfe Steel Kk | 平面磁気素子の製造方法 |
| KR101087862B1 (ko) * | 2002-08-24 | 2011-11-30 | 매스크리스 리소그래피 인코퍼레이티드 | 연속적인 직접-기록 광 리쏘그래피 장치 및 방법 |
| KR100480620B1 (ko) * | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법 |
| DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| US6870554B2 (en) | 2003-01-07 | 2005-03-22 | Anvik Corporation | Maskless lithography with multiplexed spatial light modulators |
| TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
| US7714983B2 (en) * | 2003-09-12 | 2010-05-11 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
| KR100796582B1 (ko) | 2003-12-26 | 2008-01-21 | 후지필름 가부시키가이샤 | 노광방법 및 장치 |
| US6967711B2 (en) | 2004-03-09 | 2005-11-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR20050091279A (ko) | 2004-03-11 | 2005-09-15 | 삼성전자주식회사 | 실시간으로 조절되는 조리개를 구비한 광학 시스템 |
| KR100558195B1 (ko) * | 2004-06-30 | 2006-03-10 | 삼성전자주식회사 | 광도 보정 방법과 노광 방법 및 이를 수행하기 위한 광도보정 장치와 노광 장치 |
| JP4425239B2 (ja) | 2005-05-16 | 2010-03-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置およびデバイス製造方法 |
| JP4483763B2 (ja) | 2005-10-19 | 2010-06-16 | セイコーエプソン株式会社 | 照明装置および画像表示装置 |
| US7973996B2 (en) | 2005-12-09 | 2011-07-05 | Scram Technologies, Inc. | Optical system for a digital light projection system including a 3-channel LED array light engine |
| JP2007258691A (ja) * | 2006-02-21 | 2007-10-04 | Semiconductor Energy Lab Co Ltd | レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法 |
| US7525642B2 (en) | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP5180446B2 (ja) | 2006-07-20 | 2013-04-10 | 株式会社ナノシステムソリューションズ | 露光装置及び露光方法 |
| DE102006038455A1 (de) | 2006-08-16 | 2008-02-21 | Carl Zeiss Smt Ag | Optisches System für die Halbleiterlithographie |
| US20080100816A1 (en) | 2006-10-31 | 2008-05-01 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JPWO2008069143A1 (ja) | 2006-12-05 | 2010-03-18 | 株式会社ニコン | 照明光源及び画像投影装置 |
| US7965378B2 (en) | 2007-02-20 | 2011-06-21 | Asml Holding N.V | Optical system and method for illumination of reflective spatial light modulators in maskless lithography |
| US20080220382A1 (en) * | 2007-03-06 | 2008-09-11 | Asml Netherlands B.V. | Lithographic apparatus and method |
| WO2008131928A1 (en) * | 2007-04-25 | 2008-11-06 | Carl Zeiss Smt Ag | Illumination system for illuminating a mask in a microlithographic exposure apparatus |
| US8896809B2 (en) * | 2007-08-15 | 2014-11-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP5267029B2 (ja) * | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| EP2388649B1 (en) | 2007-12-21 | 2013-06-19 | Carl Zeiss SMT GmbH | Illumination system for illuminating a mask in a microlithographic exposure apparatus |
| NL1036313A1 (nl) | 2007-12-27 | 2009-06-30 | Asml Netherlands Bv | Device manufacturing method and lithographic apparatus. |
| WO2010014164A1 (en) | 2008-07-31 | 2010-02-04 | Corning Incorporated | Active spot array lithographic projector system with regulated spots |
| US8531648B2 (en) | 2008-09-22 | 2013-09-10 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
| JP5376494B2 (ja) | 2008-10-08 | 2013-12-25 | 大日本スクリーン製造株式会社 | 描画装置および描画方法 |
| US8164046B2 (en) | 2009-07-16 | 2012-04-24 | Carl Zeiss Smt Gmbh | Illumination system for illuminating a mask in a microlithographic projection exposure apparatus |
| JP5532213B2 (ja) | 2009-12-07 | 2014-06-25 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
-
2011
- 2011-08-19 US US13/199,112 patent/US8823921B2/en not_active Expired - Fee Related
-
2012
- 2012-07-24 SG SG10201503937XA patent/SG10201503937XA/en unknown
- 2012-07-24 SG SG2012054912A patent/SG188038A1/en unknown
- 2012-08-01 KR KR1020120084396A patent/KR20130020876A/ko not_active Ceased
- 2012-08-15 JP JP2012179995A patent/JP5521012B2/ja active Active
- 2012-08-17 TW TW101129997A patent/TWI497229B/zh not_active IP Right Cessation
- 2012-08-17 CN CN201210294768.5A patent/CN102955376B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI497229B (zh) | 2015-08-21 |
| CN102955376B (zh) | 2015-12-16 |
| TW201316132A (zh) | 2013-04-16 |
| US8823921B2 (en) | 2014-09-02 |
| JP2013048237A (ja) | 2013-03-07 |
| SG188038A1 (en) | 2013-03-28 |
| US20130044301A1 (en) | 2013-02-21 |
| CN102955376A (zh) | 2013-03-06 |
| SG10201503937XA (en) | 2015-06-29 |
| KR20130020876A (ko) | 2013-03-04 |
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