JP5521012B2 - フォトリソグラフシステムに用いられるプログラム可能な照明装置 - Google Patents

フォトリソグラフシステムに用いられるプログラム可能な照明装置 Download PDF

Info

Publication number
JP5521012B2
JP5521012B2 JP2012179995A JP2012179995A JP5521012B2 JP 5521012 B2 JP5521012 B2 JP 5521012B2 JP 2012179995 A JP2012179995 A JP 2012179995A JP 2012179995 A JP2012179995 A JP 2012179995A JP 5521012 B2 JP5521012 B2 JP 5521012B2
Authority
JP
Japan
Prior art keywords
field
reticle
exposure
programmable
micromirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012179995A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013048237A5 (enExample
JP2013048237A (ja
Inventor
ズラタノフ、ボリスラフ
ハウリーラック、エム、アンドリュー
Original Assignee
ウルトラテック インク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウルトラテック インク filed Critical ウルトラテック インク
Publication of JP2013048237A publication Critical patent/JP2013048237A/ja
Publication of JP2013048237A5 publication Critical patent/JP2013048237A5/ja
Application granted granted Critical
Publication of JP5521012B2 publication Critical patent/JP5521012B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
JP2012179995A 2011-08-19 2012-08-15 フォトリソグラフシステムに用いられるプログラム可能な照明装置 Active JP5521012B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/199,112 US8823921B2 (en) 2011-08-19 2011-08-19 Programmable illuminator for a photolithography system
US13/199,112 2011-08-19

Publications (3)

Publication Number Publication Date
JP2013048237A JP2013048237A (ja) 2013-03-07
JP2013048237A5 JP2013048237A5 (enExample) 2014-03-06
JP5521012B2 true JP5521012B2 (ja) 2014-06-11

Family

ID=47712432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012179995A Active JP5521012B2 (ja) 2011-08-19 2012-08-15 フォトリソグラフシステムに用いられるプログラム可能な照明装置

Country Status (6)

Country Link
US (1) US8823921B2 (enExample)
JP (1) JP5521012B2 (enExample)
KR (1) KR20130020876A (enExample)
CN (1) CN102955376B (enExample)
SG (2) SG10201503937XA (enExample)
TW (1) TWI497229B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150201831A1 (en) * 2012-08-31 2015-07-23 Tianjin Bhy Photoelectric Technology Co., Ltd. Portable perimeter for static multi-point synchronous thresholding screening and single-point thresholding detection
EP2876499B1 (en) * 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
CN104749902B (zh) * 2013-12-31 2017-02-15 上海微电子装备有限公司 掩模板面型整形装置
DE102014219112A1 (de) * 2014-09-23 2016-03-24 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie sowie Hohlwellenleiter-Komponente hierfür
CN106707693B (zh) * 2015-07-29 2019-03-12 上海微电子装备(集团)股份有限公司 一种led光源照明装置
CN106933049B (zh) * 2015-12-30 2020-06-16 上海微电子装备(集团)股份有限公司 一种用于半导体光刻的曝光系统与曝光方法
CN108628103B (zh) * 2017-03-15 2021-05-07 中芯国际集成电路制造(上海)有限公司 光强均匀性自动调节装置及调整方法
TWI627440B (zh) * 2017-05-17 2018-06-21 力晶科技股份有限公司 影像亮度重配模組及影像亮度重配方法
DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
EP4018264A1 (en) * 2019-08-19 2022-06-29 ASML Netherlands B.V. Micromirror arrays
US11366307B2 (en) 2020-08-27 2022-06-21 Kla Corporation Programmable and reconfigurable mask with MEMS micro-mirror array for defect detection
US11960211B2 (en) * 2021-07-09 2024-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Optical lithography system and method of using the same
DE102024205430A1 (de) * 2024-06-13 2025-12-18 Carl Zeiss Smt Gmbh Optomechanisches System für die Projektionslithographie
US20260050221A1 (en) * 2024-08-15 2026-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic system, and method of using the same to perform lithography
CN118818921A (zh) * 2024-08-30 2024-10-22 新毅东(北京)科技有限公司 光刻机的曝光剂量控制架构

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02980A (ja) * 1988-03-14 1990-01-05 Mitsubishi Electric Corp レジストパターニング工程を備えた半導体装置の製造方法およびその製造方法に用いられる光照射装置
JPH0950951A (ja) * 1995-08-04 1997-02-18 Nikon Corp リソグラフィ方法およびリソグラフィ装置
DE10053587A1 (de) * 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
KR100584538B1 (ko) 1999-11-04 2006-05-30 삼성전자주식회사 마이크로미러 가동장치를 채용한 반사형 프로젝터
JP2001222064A (ja) 2000-02-08 2001-08-17 Ibm Japan Ltd 照光制御装置、プロジェクタ、および照光制御方法
US6552779B2 (en) * 2000-05-25 2003-04-22 Ball Semiconductor, Inc. Flying image of a maskless exposure system
JP2002036373A (ja) * 2000-07-25 2002-02-05 Sanyo Electric Co Ltd 光造形装置
US6863401B2 (en) 2001-06-30 2005-03-08 Texas Instruments Incorporated Illumination system
US6919951B2 (en) 2001-07-27 2005-07-19 Canon Kabushiki Kaisha Illumination system, projection exposure apparatus and device manufacturing method
SE0103006D0 (sv) * 2001-09-10 2001-09-10 Micronic Lasersystems Ab Homogenization of a spatially coherent radiation beam and reading/writing of a pattern on a workpiece
US6819490B2 (en) 2001-09-10 2004-11-16 Micronic Laser Systems Ab Homogenization of a spatially coherent radiation beam and printing and inspection, respectively, of a pattern on a workpiece
JP2003324028A (ja) * 2002-04-30 2003-11-14 Jfe Steel Kk 平面磁気素子の製造方法
KR101087862B1 (ko) * 2002-08-24 2011-11-30 매스크리스 리소그래피 인코퍼레이티드 연속적인 직접-기록 광 리쏘그래피 장치 및 방법
KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US6870554B2 (en) 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US7714983B2 (en) * 2003-09-12 2010-05-11 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
KR100796582B1 (ko) 2003-12-26 2008-01-21 후지필름 가부시키가이샤 노광방법 및 장치
US6967711B2 (en) 2004-03-09 2005-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20050091279A (ko) 2004-03-11 2005-09-15 삼성전자주식회사 실시간으로 조절되는 조리개를 구비한 광학 시스템
KR100558195B1 (ko) * 2004-06-30 2006-03-10 삼성전자주식회사 광도 보정 방법과 노광 방법 및 이를 수행하기 위한 광도보정 장치와 노광 장치
JP4425239B2 (ja) 2005-05-16 2010-03-03 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置およびデバイス製造方法
JP4483763B2 (ja) 2005-10-19 2010-06-16 セイコーエプソン株式会社 照明装置および画像表示装置
US7973996B2 (en) 2005-12-09 2011-07-05 Scram Technologies, Inc. Optical system for a digital light projection system including a 3-channel LED array light engine
JP2007258691A (ja) * 2006-02-21 2007-10-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法
US7525642B2 (en) 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5180446B2 (ja) 2006-07-20 2013-04-10 株式会社ナノシステムソリューションズ 露光装置及び露光方法
DE102006038455A1 (de) 2006-08-16 2008-02-21 Carl Zeiss Smt Ag Optisches System für die Halbleiterlithographie
US20080100816A1 (en) 2006-10-31 2008-05-01 Asml Netherlands B.V. Lithographic apparatus and method
JPWO2008069143A1 (ja) 2006-12-05 2010-03-18 株式会社ニコン 照明光源及び画像投影装置
US7965378B2 (en) 2007-02-20 2011-06-21 Asml Holding N.V Optical system and method for illumination of reflective spatial light modulators in maskless lithography
US20080220382A1 (en) * 2007-03-06 2008-09-11 Asml Netherlands B.V. Lithographic apparatus and method
WO2008131928A1 (en) * 2007-04-25 2008-11-06 Carl Zeiss Smt Ag Illumination system for illuminating a mask in a microlithographic exposure apparatus
US8896809B2 (en) * 2007-08-15 2014-11-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5267029B2 (ja) * 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
EP2388649B1 (en) 2007-12-21 2013-06-19 Carl Zeiss SMT GmbH Illumination system for illuminating a mask in a microlithographic exposure apparatus
NL1036313A1 (nl) 2007-12-27 2009-06-30 Asml Netherlands Bv Device manufacturing method and lithographic apparatus.
WO2010014164A1 (en) 2008-07-31 2010-02-04 Corning Incorporated Active spot array lithographic projector system with regulated spots
US8531648B2 (en) 2008-09-22 2013-09-10 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
JP5376494B2 (ja) 2008-10-08 2013-12-25 大日本スクリーン製造株式会社 描画装置および描画方法
US8164046B2 (en) 2009-07-16 2012-04-24 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
JP5532213B2 (ja) 2009-12-07 2014-06-25 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法

Also Published As

Publication number Publication date
TWI497229B (zh) 2015-08-21
CN102955376B (zh) 2015-12-16
TW201316132A (zh) 2013-04-16
US8823921B2 (en) 2014-09-02
JP2013048237A (ja) 2013-03-07
SG188038A1 (en) 2013-03-28
US20130044301A1 (en) 2013-02-21
CN102955376A (zh) 2013-03-06
SG10201503937XA (en) 2015-06-29
KR20130020876A (ko) 2013-03-04

Similar Documents

Publication Publication Date Title
JP5521012B2 (ja) フォトリソグラフシステムに用いられるプログラム可能な照明装置
JP2013048237A5 (enExample)
TWI616724B (zh) 微影裝置及元件製造方法
JP4880635B2 (ja) リソグラフィ装置および方法
JPWO2007058188A1 (ja) 露光装置及び露光方法、並びにデバイス製造方法
JP3413160B2 (ja) 照明装置及びそれを用いた走査型露光装置
WO2009125554A1 (en) Exposure apparatus and electronic device manufacturing method
JP6371473B2 (ja) 照明システム
US8085384B2 (en) Exposure apparatus
KR20080056094A (ko) 노광 장치 및 디바이스 제조 방법
US7826036B2 (en) Scanning exposure apparatus and method of manufacturing device
JP4303192B2 (ja) リソグラフィ装置およびデバイス製造方法
JP5387982B2 (ja) 照明光学装置、露光装置、およびデバイス製造方法
JPWO2006085626A1 (ja) 露光方法及び装置、並びにデバイス製造方法
JP2003045774A (ja) 照明装置、投影露光装置及びデバイス製造方法
US7130024B2 (en) Exposure apparatus
US8030628B2 (en) Pulse modifier, lithographic apparatus and device manufacturing method
JP4999827B2 (ja) リソグラフィ装置
KR20200105915A (ko) 투영 리소그래피 시스템을 위한 동공 패싯 미러, 조명 광학 소자 및 광학 시스템
JP2004140390A (ja) 照明光学系、露光装置及びデバイス製造方法
KR20090018149A (ko) 광학 장치
JP2007194600A (ja) リソグラフィ装置およびデバイス製造方法
JP2011146449A (ja) フレア計測方法、露光方法及び装置、並びにデバイス製造方法
JP2007173533A (ja) 露光装置、露光方法及びデバイス製造方法
JP2014203974A (ja) 照明方法及び装置、並びに露光方法及び装置

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131023

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131023

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140401

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140407

R150 Certificate of patent or registration of utility model

Ref document number: 5521012

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350