CN102955376B - 用于光刻系统的可程控照射器 - Google Patents

用于光刻系统的可程控照射器 Download PDF

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Publication number
CN102955376B
CN102955376B CN201210294768.5A CN201210294768A CN102955376B CN 102955376 B CN102955376 B CN 102955376B CN 201210294768 A CN201210294768 A CN 201210294768A CN 102955376 B CN102955376 B CN 102955376B
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CN
China
Prior art keywords
exposure
reticle
programmable
actinic light
micromirrors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210294768.5A
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English (en)
Chinese (zh)
Other versions
CN102955376A (zh
Inventor
B·兹拉塔诺夫
A·M·霍利鲁克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultratech Corp
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Ultratech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN102955376A publication Critical patent/CN102955376A/zh
Application granted granted Critical
Publication of CN102955376B publication Critical patent/CN102955376B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
CN201210294768.5A 2011-08-19 2012-08-17 用于光刻系统的可程控照射器 Expired - Fee Related CN102955376B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/199,112 US8823921B2 (en) 2011-08-19 2011-08-19 Programmable illuminator for a photolithography system
US13/199,112 2011-08-19

Publications (2)

Publication Number Publication Date
CN102955376A CN102955376A (zh) 2013-03-06
CN102955376B true CN102955376B (zh) 2015-12-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210294768.5A Expired - Fee Related CN102955376B (zh) 2011-08-19 2012-08-17 用于光刻系统的可程控照射器

Country Status (6)

Country Link
US (1) US8823921B2 (enExample)
JP (1) JP5521012B2 (enExample)
KR (1) KR20130020876A (enExample)
CN (1) CN102955376B (enExample)
SG (2) SG10201503937XA (enExample)
TW (1) TWI497229B (enExample)

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CN106707693B (zh) * 2015-07-29 2019-03-12 上海微电子装备（集团）股份有限公司 一种led光源照明装置
CN106933049B (zh) * 2015-12-30 2020-06-16 上海微电子装备（集团）股份有限公司 一种用于半导体光刻的曝光系统与曝光方法
CN108628103B (zh) * 2017-03-15 2021-05-07 中芯国际集成电路制造(上海)有限公司 光强均匀性自动调节装置及调整方法
TWI627440B (zh) * 2017-05-17 2018-06-21 力晶科技股份有限公司 影像亮度重配模組及影像亮度重配方法
DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
EP4018264A1 (en) * 2019-08-19 2022-06-29 ASML Netherlands B.V. Micromirror arrays
US11366307B2 (en) 2020-08-27 2022-06-21 Kla Corporation Programmable and reconfigurable mask with MEMS micro-mirror array for defect detection
US11960211B2 (en) * 2021-07-09 2024-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Optical lithography system and method of using the same
DE102024205430A1 (de) * 2024-06-13 2025-12-18 Carl Zeiss Smt Gmbh Optomechanisches System für die Projektionslithographie
US20260050221A1 (en) * 2024-08-15 2026-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic system, and method of using the same to perform lithography
CN118818921A (zh) * 2024-08-30 2024-10-22 新毅东(北京)科技有限公司 光刻机的曝光剂量控制架构

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Also Published As

Publication number Publication date
TWI497229B (zh) 2015-08-21
TW201316132A (zh) 2013-04-16
JP5521012B2 (ja) 2014-06-11
US8823921B2 (en) 2014-09-02
JP2013048237A (ja) 2013-03-07
SG188038A1 (en) 2013-03-28
US20130044301A1 (en) 2013-02-21
CN102955376A (zh) 2013-03-06
SG10201503937XA (en) 2015-06-29
KR20130020876A (ko) 2013-03-04

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