JP5511767B2 - 蒸着装置 - Google Patents
蒸着装置 Download PDFInfo
- Publication number
- JP5511767B2 JP5511767B2 JP2011236147A JP2011236147A JP5511767B2 JP 5511767 B2 JP5511767 B2 JP 5511767B2 JP 2011236147 A JP2011236147 A JP 2011236147A JP 2011236147 A JP2011236147 A JP 2011236147A JP 5511767 B2 JP5511767 B2 JP 5511767B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- vapor deposition
- chamber
- steam
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007740 vapor deposition Methods 0.000 title claims description 105
- 239000000463 material Substances 0.000 claims description 72
- 238000012545 processing Methods 0.000 claims description 66
- 239000012159 carrier gas Substances 0.000 claims description 31
- 238000005192 partition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 63
- 239000000758 substrate Substances 0.000 description 57
- 238000012546 transfer Methods 0.000 description 27
- 238000005401 electroluminescence Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011236147A JP5511767B2 (ja) | 2011-10-27 | 2011-10-27 | 蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011236147A JP5511767B2 (ja) | 2011-10-27 | 2011-10-27 | 蒸着装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006269085A Division JP5173175B2 (ja) | 2006-09-29 | 2006-09-29 | 蒸着装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012026041A JP2012026041A (ja) | 2012-02-09 |
| JP2012026041A5 JP2012026041A5 (enrdf_load_stackoverflow) | 2012-12-13 |
| JP5511767B2 true JP5511767B2 (ja) | 2014-06-04 |
Family
ID=45779301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011236147A Active JP5511767B2 (ja) | 2011-10-27 | 2011-10-27 | 蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5511767B2 (enrdf_load_stackoverflow) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308082A (ja) * | 2000-04-20 | 2001-11-02 | Nec Corp | 液体有機原料の気化方法及び絶縁膜の成長方法 |
| JP3684343B2 (ja) * | 2001-09-25 | 2005-08-17 | 株式会社日本ビーテック | 薄膜堆積用分子線源セル |
| JP2003193224A (ja) * | 2001-12-21 | 2003-07-09 | Sharp Corp | 薄膜製造装置とその装置を用いた薄膜積層装置並びに薄膜製造方法 |
| JP2004010990A (ja) * | 2002-06-10 | 2004-01-15 | Sony Corp | 薄膜形成装置 |
| US7067170B2 (en) * | 2002-09-23 | 2006-06-27 | Eastman Kodak Company | Depositing layers in OLED devices using viscous flow |
| JP4013859B2 (ja) * | 2003-07-17 | 2007-11-28 | 富士電機ホールディングス株式会社 | 有機薄膜の製造装置 |
| JP4366226B2 (ja) * | 2004-03-30 | 2009-11-18 | 東北パイオニア株式会社 | 有機ｅｌパネルの製造方法、有機ｅｌパネルの成膜装置 |
| JP2006057173A (ja) * | 2004-08-24 | 2006-03-02 | Tohoku Pioneer Corp | 成膜源、真空成膜装置、有機ｅｌパネルの製造方法 |
| JP2006104497A (ja) * | 2004-10-01 | 2006-04-20 | Hitachi Zosen Corp | 蒸着装置 |
-
2011
- 2011-10-27 JP JP2011236147A patent/JP5511767B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012026041A (ja) | 2012-02-09 |
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