JP5503679B2 - 二重パイロメータ - Google Patents
二重パイロメータ Download PDFInfo
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- JP5503679B2 JP5503679B2 JP2012055787A JP2012055787A JP5503679B2 JP 5503679 B2 JP5503679 B2 JP 5503679B2 JP 2012055787 A JP2012055787 A JP 2012055787A JP 2012055787 A JP2012055787 A JP 2012055787A JP 5503679 B2 JP5503679 B2 JP 5503679B2
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- 230000005855 radiation Effects 0.000 claims description 74
- 230000005540 biological transmission Effects 0.000 claims description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 16
- 230000004044 response Effects 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- 230000009977 dual effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 123
- 238000000034 method Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 15
- 238000004616 Pyrometry Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000005457 Black-body radiation Effects 0.000 description 5
- 238000010606 normalization Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004382 potting Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000007620 mathematical function Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000002595 Solanum tuberosum Nutrition 0.000 description 1
- 244000061456 Solanum tuberosum Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002371 helium Chemical class 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- A—HUMAN NECESSITIES
- A21—BAKING; EDIBLE DOUGHS
- A21B—BAKERS' OVENS; MACHINES OR EQUIPMENT FOR BAKING
- A21B1/00—Bakers' ovens
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
- F27D21/0014—Devices for monitoring temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Food Science & Technology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Radiation Pyrometers (AREA)
Description
ここで、αは、吸収係数であり、χは、ウエハの厚さである。バンドギャップ近くのシリコンの吸収係数は、室温(20℃)及び200℃に対して、図3のグラフに示されるように、既知温度依存性を有している。それらの急に傾斜している部分は、熱的に活性化された自由キャリア及びフォノン寄与度の熱変化の両者に依存している光学的バンドギャップの吸収エッジと関連づけられている。その吸収エッジは、波長の増大につれてより長い波長(より小さい光子エネルギー)へシフトする。
ここで、LBBは、温度TLの表面からのプランクの黒体放射スペクトルである。
Claims (12)
- 白熱ランプを含む放射加熱源と、
前記放射加熱源と対向してウエハを支持するためのサポートと、
前記サポートの前記放射熱源とは反対の側に配設されるリフレクタプレートと、
前記リフレクタプレートにおける開口を通して光学的に結合される入力端部を有していて、上記リフレクタプレートによって支持され且つ前記ウエハに向けられた光パイプと、
前記光パイプの出力を受け、前記出力を第1のビーム及び第2のビームへと分割する光学的ビームスプリッタと、
前記第1のビームを受け取り、前記第1のビームに基づいた光電流を発生する透過型パイロメータと、
前記第2のビームをフィルタリングする狭帯域フィルタと、
フィルタリングされた前記第2のビームを受け取り、フィルタリングされた前記第2のビームに基づいた光電流を発生する放射型パイロメータと、
を備え、
前記透過型パイロメータは、前記ウエハの吸収ギャップの波長に感応するスペクトル応答を有し、前記狭帯域フィルタは、前記ウエハのバンドギャップ波長より短い光子波長での通過帯域を有する、熱処理システム。 - 前記透過型パイロメータ及び放射型パイロメータの出力を受け、それに応答して前記ランプへ供給される電力を制御するコントローラを更に備える、請求項1に記載の熱処理システム。
- 上記リフレクタプレートにおける開口に移動可能なように配設され上記ウエハを選択的に支持するためのリフトピンを更に備え、上記光パイプは、上記リフトピンとは機械的に独立している、請求項1及び2のいずれかに記載の熱処理システム。
- 上記光パイプ及び上記光学的ビームスプリッタを結合する可撓性の光ガイドを更に備える、請求項1及び2のいずれかに記載の熱処理システム。
- 光ガイドを通してウエハからの信号を受け、それを、反射面から反射される第1のビームと、上記反射面から反射されない第2のビームと、に分割するビームスプリッタと、
前記第1のビームを受け取り、前記第1のビームに基づいた光電流を発生する透過型パイロメータと、
前記第2のビームをフィルタリングする狭帯域フィルタと、
フィルタリングされた前記第2のビームを受け取り、フィルタリングされた前記第2のビームに基づいた光電流を発生する放射型パイロメータと、
を備え、
前記透過型パイロメータは、前記ウエハの吸収ギャップの波長に感応するスペクトル応答を有し、前記狭帯域フィルタは、前記ウエハのバンドギャップ波長より短い光子波長での通過帯域を有する、二重パイロメータ。 - 前記ビームスプリッタを収容し且つ前記光ガイドからの放射線を受け取る入口開口を有するハウジングを更に備え、
前記透過型パイロメータは、前記ハウジングによって支持された第1の光検出器を含み、
前記放射型パイロメータは、前記ハウジングによって支持された第2の光検出器を含み、
前記ビームスプリッタは、前記入口開口と前記狭帯域フィルタとの間の光学路に配設されている、請求項5に記載の二重パイロメータ。 - 前記第1の光検出器及び第2の光検出器の両者は、シリコンフォトダイオードである、請求項6に記載の二重パイロメータ。
- 前記ビームスプリッタと前記第1の光検出器との間の光学路においては実質的にフィルタリングが行われない、請求項7に記載の二重パイロメータ。
- 前記透過型パイロメータは、InGaAsフォトダイオードと、前記ビームスプリッタと前記InGaAsフォトダイオードとの間の光学路に配設された光学的フィルタとを備える、請求項6に記載の二重パイロメータ。
- 前記光ガイドの出力を狭い端部で受け取り、広い端部が前記狭帯域フィルタに隣接して配設されているコリメータであって、前記ビームスプリッタが前記狭い端部と前記狭帯域フィルタとの間に配設され、前記第1の光検出器が前記コリメータの側壁における開口を通して前記ビームスプリッタからの光を受け取るようにしたコリメータと、
前記狭帯域フィルタを通してくる放射線を広い端部を通して受け取るコンセントレータであって、前記第2の光検出器が前記コンセントレータの狭い端部を通して光を受け取るようにしたコンセントレータと、
を更に備える請求項6に記載の二重パイロメータ。 - 前記ビームスプリッタと、前記透過型パイロメータと、前記放射型パイロメータと、前記ビームスプリッタに結合された光パイプの出力端部と、を収容するハウジングを更に備える請求項5に記載の二重パイロメータ。
- 光ガイドから信号を受け、それを第1のビームと第2のビームとに分割するビームスプリッタと、
前記第1のビームを受け取り、前記第1のビームに基づいた光電流を発生する透過型パイロメータと、
前記第2のビームをフィルタリングする狭帯域フィルタと、
フィルタリングされた前記第2のビームを受け取り、フィルタリングされた前記第2のビームに基づいた光電流を発生する放射型パイロメータと、
を備えており、
前記透過型パイロメータ及び放射型パイロメータは、シリコンウエハの温度を検出するように構成されており、
前記透過型パイロメータは、前記シリコンウエハの吸収ギャップの波長に感応するスペクトル応答を有し、前記狭帯域フィルタは、前記シリコンウエハのバンドギャップ波長より短い光子波長での通過帯域を有する、二重パイロメータ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/974,003 US7112763B2 (en) | 2004-10-26 | 2004-10-26 | Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers |
US10/974,003 | 2004-10-26 |
Related Parent Applications (1)
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JP2007538953A Division JP5064227B2 (ja) | 2004-10-26 | 2005-10-05 | シリコンウエハを熱処理するのに有用な低温型パイロメトリーのための方法及び装置 |
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JP2012156522A JP2012156522A (ja) | 2012-08-16 |
JP5503679B2 true JP5503679B2 (ja) | 2014-05-28 |
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JP2007538953A Active JP5064227B2 (ja) | 2004-10-26 | 2005-10-05 | シリコンウエハを熱処理するのに有用な低温型パイロメトリーのための方法及び装置 |
JP2012055787A Active JP5503679B2 (ja) | 2004-10-26 | 2012-03-13 | 二重パイロメータ |
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JP2007538953A Active JP5064227B2 (ja) | 2004-10-26 | 2005-10-05 | シリコンウエハを熱処理するのに有用な低温型パイロメトリーのための方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7112763B2 (ja) |
EP (1) | EP1809111A4 (ja) |
JP (2) | JP5064227B2 (ja) |
KR (1) | KR100885098B1 (ja) |
CN (1) | CN101128716B (ja) |
WO (1) | WO2006047062A2 (ja) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
EP1573784A2 (en) * | 2002-12-09 | 2005-09-14 | Koninklijke Philips Electronics N.V. | System and method for suppression of wafer temperature drift in cold-wall cvd system |
US20060240680A1 (en) * | 2005-04-25 | 2006-10-26 | Applied Materials, Inc. | Substrate processing platform allowing processing in different ambients |
US7321722B2 (en) * | 2005-06-13 | 2008-01-22 | United Microelectronics Corp. | Method for thermal processing a semiconductor wafer |
US7274618B2 (en) * | 2005-06-24 | 2007-09-25 | Monolithic System Technology, Inc. | Word line driver for DRAM embedded in a logic process |
WO2007005489A2 (en) * | 2005-07-05 | 2007-01-11 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
JP4940635B2 (ja) * | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | 加熱装置、熱処理装置及び記憶媒体 |
US7543981B2 (en) | 2006-06-29 | 2009-06-09 | Mattson Technology, Inc. | Methods for determining wafer temperature |
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