JP5499317B2 - 熱電変換素子及び熱電変換モジュール - Google Patents
熱電変換素子及び熱電変換モジュール Download PDFInfo
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- JP5499317B2 JP5499317B2 JP2009049084A JP2009049084A JP5499317B2 JP 5499317 B2 JP5499317 B2 JP 5499317B2 JP 2009049084 A JP2009049084 A JP 2009049084A JP 2009049084 A JP2009049084 A JP 2009049084A JP 5499317 B2 JP5499317 B2 JP 5499317B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
また、全ての熱電変換素子をn形又はp形で成形し、一の熱電変換素子に接続された第1電極を、隣接する熱電変換素子に接続された第2電極に電気的に接続して、各熱電変換素子が直列に接続するため、1つの型の熱電変換素子を単位素子として、熱電変換モジュールの用途に応じて、前記フェールセーフ機能を確保しつつ、要求される電圧、電流に応じて、様々な出力特性の熱電変換モジュールを製造することができ、汎用性を向上させることができる。
図5(b)は比較例の模式図を上図に示し、その等価回路を下図に示したものである。比較例の熱電変換素子は、Mg2Siで成形されたものであり、第1実施形態の柱状部22の断面積S1と同一断面積で、高さが第1実施形態の熱電変換素子2の高さh(h=h1+h2)と同一のものを電極間に4つ配置したものである。比較例の熱電変換素子の内部抵抗をRin1、4つの熱電変換素子の内部抵抗の合計をR1とすると、R1は次式(2)で求められる。
第1実施形態の熱電変換素子2の内部抵抗R2と比較例の4つの熱電変換素子の内部抵抗の合計R1とを比較すべく、R1からR2を引いてみると、式(1)、式(2)から次式(3)が求められる。
ここで、連結部21の接触面21bの面積S2は、柱状部22間の間隔分だけ柱状部22の一端22aの面積S1の合計である4S1よりも大きくなる。従って、(S2−4S1)>0となるため、式(3)も0を超える値となることが分かる。従って、第1実施形態の熱電変換素子2は、比較例の4つの熱電変換素子よりも内部抵抗が小さいことが分かる。
図5(b)に示す比較例の4つの熱電変換素子の電極31,32との接続部分の接触抵抗について検討すると、比較例の4つの熱電変換素子の電極31,32との接続部分の接触抵抗の合計をRbとすると、比較例の1つの熱電変換素子の各端の接触抵抗は、その面積が柱状部22の一端22aと同一であるため、Rj1となる。従って、Rbは次式(5)で求められる。
第1実施形態の熱電変換素子2の接触抵抗Raと比較例の4つの熱電変換素子の接触抵抗の合計Rbとを比較すべく、RbからRaを引いてみると、式(4)、式(5)から次式(6)が求められる。
ここで、連結部21の接触面21bの面積S2は、柱状部22間の間隔分だけ柱状部22の一端22aの面積S1の合計である4S1よりも大きくなる。従って、(S2−4S1)>0となるため、式(6)も0を超える値となることが分かる。従って、第1実施形態の熱電変換素子2は、比較例の4つの熱電変換素子よりも接触抵抗が小さいことが分かる。
Claims (3)
- 一対の基板と、互いに間隔を存して前記基板に夫々配置される第1電極と第2電極と、両電極間に配置され、前記第1電極と前記第2電極とを電気的に接続する熱電変換素子とを備える熱電変換モジュールにおいて、
前記熱電変換素子は、互いに間隔を存して配置されると共に一端が前記第1電極と電気的に接続される複数の柱状部と、各柱状部の他端を連結すると共に第2電極と電気的に接続される連結部とを備え、
該連結部の第2電極と接続される接続面は、各柱状部の一端の第1電極と接続される接続面の面積の合計よりも大きくなるように形成され、
前記各柱状部の側面と、前記連結部の前記第1電極に対向する側の面とは、前記第1電極と電気的に非接続とされ、
全ての熱電変換素子をn形又はp形で成形し、一の熱電変換素子に接続された第1電極を、隣接する熱電変換素子に接続された第2電極に電気的に接続して、各熱電変換素子が直列に接続されるように構成したことを特徴とする熱電変換モジュール。 - 請求項1記載の熱電変換モジュールにおいて、前記各柱状部の一端の接続面の面積は、前記各柱状部と前記連結部の接続部分の断面積よりも小さいことを特徴とする熱電変換モジュール。
- 請求項1又は2に記載の熱電変換モジュールであって、該一対の基板の間に断熱材が配置されることを特徴とする熱電変換モジュール。
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JP2009049084A JP5499317B2 (ja) | 2009-03-03 | 2009-03-03 | 熱電変換素子及び熱電変換モジュール |
US13/254,595 US20120000500A1 (en) | 2009-03-03 | 2010-02-24 | Thermoelectric conversion element and thermoelectric conversion module |
EP10748644A EP2405502A4 (en) | 2009-03-03 | 2010-02-24 | ELEMENT FOR THERMOELECTRIC CONVERSION AND MODULE FOR THERMOELECTRIC CONVERSION |
PCT/JP2010/052824 WO2010101049A1 (ja) | 2009-03-03 | 2010-02-24 | 熱電変換素子及び熱電変換モジュール |
CN2010800104528A CN102341927A (zh) | 2009-03-03 | 2010-02-24 | 热电转换元件及热电转换模块 |
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CN (1) | CN102341927A (ja) |
WO (1) | WO2010101049A1 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010049300A1 (de) * | 2010-10-22 | 2012-04-26 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Halbleiterelemente bestehend aus thermoelektrischem Material zum Einsatz in einem thermoelektrischen Modul |
US9082928B2 (en) | 2010-12-09 | 2015-07-14 | Brian Isaac Ashkenazi | Next generation thermoelectric device designs and methods of using same |
EP2660888A4 (en) | 2010-12-28 | 2014-06-11 | Kyocera Corp | THERMOELECTRIC CONVERSION ELEMENT |
US20120291454A1 (en) * | 2011-05-20 | 2012-11-22 | Baker Hughes Incorporated | Thermoelectric Devices Using Sintered Bonding |
US9947855B2 (en) | 2011-09-26 | 2018-04-17 | Nec Corporation | Thermoelectric conversion element and method of manufacturing the same, and heat radiation fin |
JP5913935B2 (ja) * | 2011-11-30 | 2016-05-11 | 日本サーモスタット株式会社 | 熱電変換モジュール |
EP2807682A1 (en) | 2012-01-25 | 2014-12-03 | Alphabet Energy, Inc. | Modular thermoelectric units for heat recovery systems and methods thereof |
EP2810310A4 (en) * | 2012-02-01 | 2016-01-20 | Baker Hughes Inc | THERMOELECTRIC DEVICES WITH SINTERED BOND |
US20130247953A1 (en) * | 2012-03-23 | 2013-09-26 | Trustees Of Boston College | Electrode materials and configurations for thermoelectric devices |
US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
US10454013B2 (en) | 2012-11-16 | 2019-10-22 | Micropower Global Limited | Thermoelectric device |
JP6009382B2 (ja) * | 2013-03-15 | 2016-10-19 | 日本サーモスタット株式会社 | 熱電変換モジュール |
WO2014205258A1 (en) | 2013-06-19 | 2014-12-24 | University Of Houston System | Formation of p-type filled skutterudite by ball-milling and thermo-mechanical processing |
CN106062978B (zh) * | 2013-06-20 | 2018-11-06 | 休斯敦大学体系 | 热电填充式方钴矿器件的稳定电极/扩散阻挡层的制造 |
US9065017B2 (en) * | 2013-09-01 | 2015-06-23 | Alphabet Energy, Inc. | Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same |
FR3011983B1 (fr) * | 2013-10-10 | 2017-01-27 | Valeo Systemes Thermiques | Ensemble comprenant un element thermo electrique et un moyen de connexion electrique, module thermo electrique comprenant un tel ensemble et procede de fabrication dudit ensemble. |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US20180090660A1 (en) | 2013-12-06 | 2018-03-29 | Sridhar Kasichainula | Flexible thin-film based thermoelectric device with sputter deposited layer of n-type and p-type thermoelectric legs |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
WO2016046713A1 (en) * | 2014-09-22 | 2016-03-31 | Consorzio Delta Ti Research | Silicon integrated, out-of-plane heat flux thermoelectric generator |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US10672968B2 (en) * | 2015-07-21 | 2020-06-02 | Analog Devices Global | Thermoelectric devices |
JP2017204550A (ja) * | 2016-05-11 | 2017-11-16 | 積水化学工業株式会社 | 熱電変換材料、熱電変換素子及び熱電変換素子の製造方法 |
JP7362062B2 (ja) * | 2018-09-10 | 2023-10-17 | 株式会社Kelk | 熱電変換素子の製造方法及び熱電変換素子 |
JP7360360B2 (ja) * | 2020-06-05 | 2023-10-12 | 株式会社東芝 | 発電素子 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4489742A (en) * | 1983-07-21 | 1984-12-25 | Energy Conversion Devices, Inc. | Thermoelectric device and method of making and using same |
JP2670366B2 (ja) * | 1989-11-09 | 1997-10-29 | 日本原子力発電株式会社 | 熱電発電素子 |
JP2873961B1 (ja) * | 1998-02-02 | 1999-03-24 | 科学技術庁航空宇宙技術研究所長 | 熱電変換装置 |
JPH11274578A (ja) * | 1998-03-19 | 1999-10-08 | Matsushita Electric Ind Co Ltd | 熱電変換材料の製造方法および熱電変換モジュール |
JP3509572B2 (ja) * | 1998-08-28 | 2004-03-22 | 住友金属工業株式会社 | 多孔質熱電変換素子 |
JP2001320096A (ja) * | 2000-05-09 | 2001-11-16 | Citizen Watch Co Ltd | 熱電素子およびその製造方法 |
JP2002285274A (ja) * | 2001-03-27 | 2002-10-03 | Daido Steel Co Ltd | Mg−Si系熱電材料及びその製造方法 |
JP3772206B2 (ja) * | 2002-06-12 | 2006-05-10 | 国立大学法人静岡大学 | マグネシウムシリサイドの合成方法および熱電素子モジュールの製造方法 |
JP2004311819A (ja) * | 2003-04-09 | 2004-11-04 | Idemitsu Kosan Co Ltd | 熱電変換モジュール |
US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
US20070084497A1 (en) * | 2005-10-19 | 2007-04-19 | Richard Strnad | Solid state direct heat to cooling converter |
DE112007002615B4 (de) * | 2006-11-02 | 2020-02-06 | Toyota Jidosha Kabushiki Kaisha | Thermoelektrische Vorrichtung und thermoelektrisches Modul |
WO2008060282A1 (en) * | 2006-11-17 | 2008-05-22 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
-
2009
- 2009-03-03 JP JP2009049084A patent/JP5499317B2/ja not_active Expired - Fee Related
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2010
- 2010-02-24 CN CN2010800104528A patent/CN102341927A/zh active Pending
- 2010-02-24 US US13/254,595 patent/US20120000500A1/en not_active Abandoned
- 2010-02-24 EP EP10748644A patent/EP2405502A4/en not_active Withdrawn
- 2010-02-24 WO PCT/JP2010/052824 patent/WO2010101049A1/ja active Application Filing
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US20120000500A1 (en) | 2012-01-05 |
EP2405502A1 (en) | 2012-01-11 |
CN102341927A (zh) | 2012-02-01 |
WO2010101049A1 (ja) | 2010-09-10 |
JP2010205883A (ja) | 2010-09-16 |
EP2405502A4 (en) | 2012-11-14 |
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