JP5494455B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5494455B2
JP5494455B2 JP2010274447A JP2010274447A JP5494455B2 JP 5494455 B2 JP5494455 B2 JP 5494455B2 JP 2010274447 A JP2010274447 A JP 2010274447A JP 2010274447 A JP2010274447 A JP 2010274447A JP 5494455 B2 JP5494455 B2 JP 5494455B2
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JP
Japan
Prior art keywords
power supply
semiconductor memory
memory device
array
redundant
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Expired - Fee Related
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JP2010274447A
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English (en)
Japanese (ja)
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JP2012123876A (ja
JP2012123876A5 (https=
Inventor
広之 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2010274447A priority Critical patent/JP5494455B2/ja
Priority to US13/279,425 priority patent/US8675430B2/en
Publication of JP2012123876A publication Critical patent/JP2012123876A/ja
Publication of JP2012123876A5 publication Critical patent/JP2012123876A5/ja
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Publication of JP5494455B2 publication Critical patent/JP5494455B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2010274447A 2010-12-09 2010-12-09 半導体記憶装置 Expired - Fee Related JP5494455B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010274447A JP5494455B2 (ja) 2010-12-09 2010-12-09 半導体記憶装置
US13/279,425 US8675430B2 (en) 2010-12-09 2011-10-24 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010274447A JP5494455B2 (ja) 2010-12-09 2010-12-09 半導体記憶装置

Publications (3)

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JP2012123876A JP2012123876A (ja) 2012-06-28
JP2012123876A5 JP2012123876A5 (https=) 2013-10-17
JP5494455B2 true JP5494455B2 (ja) 2014-05-14

Family

ID=46199264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010274447A Expired - Fee Related JP5494455B2 (ja) 2010-12-09 2010-12-09 半導体記憶装置

Country Status (2)

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US (1) US8675430B2 (https=)
JP (1) JP5494455B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020166346A (ja) * 2019-03-28 2020-10-08 ラピスセミコンダクタ株式会社 半導体記憶装置
KR20230091244A (ko) 2021-12-15 2023-06-23 삼성전자주식회사 반도체 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676595A (ja) * 1992-08-26 1994-03-18 Hitachi Ltd 半導体メモリ
KR0172333B1 (ko) * 1995-01-16 1999-03-30 김광호 반도체 메모리 장치의 전원 승압 회로
JP2953345B2 (ja) * 1995-06-08 1999-09-27 日本電気株式会社 半導体記憶装置
JP3036411B2 (ja) * 1995-10-18 2000-04-24 日本電気株式会社 半導体記憶集積回路装置
JP2000067595A (ja) * 1998-06-09 2000-03-03 Mitsubishi Electric Corp 半導体記憶装置
JP4427847B2 (ja) 1999-11-04 2010-03-10 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置
JP3863410B2 (ja) * 2001-11-12 2006-12-27 富士通株式会社 半導体メモリ
JP3983048B2 (ja) * 2001-12-18 2007-09-26 シャープ株式会社 半導体記憶装置および情報機器
JP2004342260A (ja) 2003-05-16 2004-12-02 Hitachi Ltd 半導体記憶装置
JP2006252708A (ja) * 2005-03-11 2006-09-21 Elpida Memory Inc 半導体記憶装置における電圧発生方法及び半導体記憶装置
JP5449670B2 (ja) * 2007-12-25 2014-03-19 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置、および冗長領域のリフレッシュ方法
JP4949451B2 (ja) 2009-10-29 2012-06-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置

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Publication number Publication date
JP2012123876A (ja) 2012-06-28
US8675430B2 (en) 2014-03-18
US20120147685A1 (en) 2012-06-14

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