JP5493065B2 - バリスタ装置およびその製造方法 - Google Patents
バリスタ装置およびその製造方法 Download PDFInfo
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- JP5493065B2 JP5493065B2 JP2011065920A JP2011065920A JP5493065B2 JP 5493065 B2 JP5493065 B2 JP 5493065B2 JP 2011065920 A JP2011065920 A JP 2011065920A JP 2011065920 A JP2011065920 A JP 2011065920A JP 5493065 B2 JP5493065 B2 JP 5493065B2
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- varistor
- electrode plate
- electrode
- laminate
- case
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- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004020 conductor Substances 0.000 claims description 22
- 239000000945 filler Substances 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
- H01C7/126—Means for protecting against excessive pressure or for disconnecting in case of failure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Description
20 電極板
21 延出部
22 切り起こし突起部
30 絶縁性ケース
40 絶縁性カバー
45 傾斜突起部
50 端子導体
70 絶縁性充填剤
80 積層体
90 端子導体
91 切り離し部材
91a ねじ部
91b フランジ部
94 ナット
Claims (6)
- 複数個の板状バリスタ素子と、積層されたバリスタ素子の各電極面に接触してバリスタ素子を並列接続する電極板と、バリスタ素子および電極板からなる積層体を収容する絶縁性ケースと、そのケースの開口部を閉塞する絶縁性カバーとを備え、ケース内に積層体を収容すると共に絶縁性充填剤を充填し、その積層体のバリスタ素子と電極板とを圧接した状態でカバーおよび絶縁性充填剤で積層体を密封したバリスタ装置であって、前記電極板は、同一電位を有する一対の電極板を積層体の側方へ延出させ、両電極板のそれぞれの延出部を端子導体で電気的かつ機械的に結合させた分割構造としたことを特徴とするバリスタ装置。
- 前記端子導体は、ねじ部と前記ねじ部の端部に低溶融半田で連結されたフランジ部とからなる切り離し部材を備え、前記フランジ部を電極板の延出部内側で係止させ、前記フランジ部から延びるねじ部を電極板の延出部外側へ導出させてナットにより螺着した請求項1に記載のバリスタ装置。
- 前記カバーは、電極板との接触面に、前記電極板との圧接により変形可能な傾斜突起部を有する請求項1又は2に記載のバリスタ装置。
- 前記電極板は、バリスタ素子との接触面に、前記バリスタ素子との圧接により変形可能な切り起こし突起部を有する請求項1〜3のいずれか一項に記載のバリスタ装置。
- 複数個の板状バリスタ素子と前記バリスタ素子の各電極面に接触して前記バリスタ素子を並列接続する電極板とからなる積層体を絶縁性ケースに収容すると共に、絶縁性カバーで前記ケースの開口部を閉塞することにより積層体のバリスタ素子と電極板とを圧接状態にした後、前記絶縁性充填剤の注入によりカバーおよび絶縁性充填剤で前記積層体をケース内に密封するバリスタ装置の製造方法であって、同一電位を有する一対の電極板を積層体の側方へ延出させ、両電極板のそれぞれの延出部を端子導体で電気的かつ機械的に結合させることを特徴とするバリスタ装置の製造方法。
- 前記端子導体は、ねじ部と前記ねじ部の端部に低溶融半田で連結されたフランジ部とからなる切り離し部材を備え、前記フランジ部を電極板の延出部内側で係止させ、前記フランジ部から延びるねじ部を電極板の延出部外側へ導出させてナットにより螺着する請求項5に記載のバリスタ装置の製造方法。
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JP2011065920A JP5493065B2 (ja) | 2011-03-24 | 2011-03-24 | バリスタ装置およびその製造方法 |
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JP2011065920A JP5493065B2 (ja) | 2011-03-24 | 2011-03-24 | バリスタ装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012204473A JP2012204473A (ja) | 2012-10-22 |
JP5493065B2 true JP5493065B2 (ja) | 2014-05-14 |
Family
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JP2011065920A Active JP5493065B2 (ja) | 2011-03-24 | 2011-03-24 | バリスタ装置およびその製造方法 |
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JP (1) | JP5493065B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3413320A3 (en) * | 2017-10-27 | 2019-07-24 | RIPD Research and IP Development Ltd. | Overvoltage protection device including multiple varistor wafers |
US10447026B2 (en) | 2016-12-23 | 2019-10-15 | Ripd Ip Development Ltd | Devices for active overvoltage protection |
US10707678B2 (en) | 2016-12-23 | 2020-07-07 | Ripd Research And Ip Development Ltd. | Overvoltage protection device including multiple varistor wafers |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6083570B2 (ja) * | 2013-10-04 | 2017-02-22 | 音羽電機工業株式会社 | 分離器付spd |
KR101982128B1 (ko) * | 2016-04-28 | 2019-05-27 | 한국전기연구원 | 직격뢰용 대용량 바리스터 및 바리스터 단자 |
CN115036087B (zh) * | 2022-06-23 | 2024-06-25 | 山东泰开电力电器有限公司 | 一种避雷器芯体的安装结构及其基于激光定位的装配方法 |
US20240127991A1 (en) * | 2022-10-18 | 2024-04-18 | Raycap, S.A. | Surge protective devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6115705U (ja) * | 1984-07-02 | 1986-01-29 | 株式会社明電舎 | 避雷器 |
JPH0381973A (ja) * | 1989-05-11 | 1991-04-08 | Fuji Electric Co Ltd | 燃料電池 |
JP2982327B2 (ja) * | 1991-02-14 | 1999-11-22 | 株式会社村田製作所 | 複写機の定着用ヒータ装置 |
JP4588347B2 (ja) * | 2004-03-31 | 2010-12-01 | 音羽電機工業株式会社 | アレスタ装置 |
JP5203255B2 (ja) * | 2009-02-27 | 2013-06-05 | 音羽電機工業株式会社 | バリスタ装置およびその製造方法 |
-
2011
- 2011-03-24 JP JP2011065920A patent/JP5493065B2/ja active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10447026B2 (en) | 2016-12-23 | 2019-10-15 | Ripd Ip Development Ltd | Devices for active overvoltage protection |
US10707678B2 (en) | 2016-12-23 | 2020-07-07 | Ripd Research And Ip Development Ltd. | Overvoltage protection device including multiple varistor wafers |
US11165246B2 (en) | 2016-12-23 | 2021-11-02 | Ripd Research And Ip Development Ltd. | Overvoltage protection device including multiple varistor wafers |
US11374396B2 (en) | 2016-12-23 | 2022-06-28 | Ripd Research And Ip Development Ltd. | Devices for active overvoltage protection |
US11881704B2 (en) | 2016-12-23 | 2024-01-23 | Ripd Research And Ip Development Ltd. | Devices for active overvoltage protection including varistors and thyristors |
EP3413320A3 (en) * | 2017-10-27 | 2019-07-24 | RIPD Research and IP Development Ltd. | Overvoltage protection device including multiple varistor wafers |
Also Published As
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JP2012204473A (ja) | 2012-10-22 |
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