JP5466468B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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Publication number
JP5466468B2
JP5466468B2 JP2009231637A JP2009231637A JP5466468B2 JP 5466468 B2 JP5466468 B2 JP 5466468B2 JP 2009231637 A JP2009231637 A JP 2009231637A JP 2009231637 A JP2009231637 A JP 2009231637A JP 5466468 B2 JP5466468 B2 JP 5466468B2
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Japan
Prior art keywords
etching
gas
layer
resist
dry etching
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Japanese (ja)
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JP2011082260A (ja
JP2011082260A5 (enExample
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雅俊 前田
一之 古谷
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Asahi Kasei Corp
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Asahi Kasei E Materials Corp
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JP2009231637A 2009-10-05 2009-10-05 ドライエッチング方法 Active JP5466468B2 (ja)

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JP2009231637A JP5466468B2 (ja) 2009-10-05 2009-10-05 ドライエッチング方法

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JP2011082260A JP2011082260A (ja) 2011-04-21
JP2011082260A5 JP2011082260A5 (enExample) 2012-11-22
JP5466468B2 true JP5466468B2 (ja) 2014-04-09

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012133187A1 (ja) * 2011-03-25 2012-10-04 Hoya株式会社 ナノインプリント用モールドの製造方法および基板作製方法
JP6529357B2 (ja) * 2015-06-23 2019-06-12 東京エレクトロン株式会社 エッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855857A (ja) * 1994-08-15 1996-02-27 Yamaha Corp 絶縁膜加工法
JP2002217285A (ja) * 2001-01-15 2002-08-02 Canon Inc 半導体装置の製造方法
JP2003151956A (ja) * 2001-11-19 2003-05-23 Sony Corp 半導体装置製造工程における窒化シリコン膜のエッチング方法
US7291446B2 (en) * 2004-03-17 2007-11-06 Tokyo Electron Limited Method and system for treating a hard mask to improve etch characteristics
CN104076600B (zh) * 2008-01-25 2019-02-15 旭化成株式会社 无缝塑模的制造方法

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