JP5460860B2 - 太陽電池素子およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 120
- 229910052709 silver Inorganic materials 0.000 claims description 80
- 239000004332 silver Substances 0.000 claims description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 76
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 75
- 239000002245 particle Substances 0.000 claims description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 43
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000000956 alloy Substances 0.000 claims description 41
- 229910000570 Cupronickel Inorganic materials 0.000 claims description 39
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 39
- 229910052759 nickel Inorganic materials 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000010304 firing Methods 0.000 description 17
- 238000007650 screen-printing Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000000926 separation method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004898 kneading Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
太陽電池素子の基本構成について説明する。例えば図1(a),(b)に示すように、太陽電池素子1は、少なくとも一導電型の第1半導体層と逆導電型の第2半導体層とを有する半導体基板2と、発電電力を取り出すための電極(バスバー電極3,フィンガー電極4,集電電極5,出力取出電極6)とを備えている。第2半導体層は、半導体基板2の少なくとも第1主面2aに配置されており、電極は、第2半導体層の上に配置された第1電極(バスバー電極3,フィンガー電極4)と、半導体基板2の第1主面2aの反対側に位置する第2主面2bに配置された第2電極(集電電極5,出力取出電極6)とを有している。そして、太陽電池素子1は、第1電極および第2電極の少なくとも一方が、銀、銅およびニッケルを主成分として含有していることを特徴とする。
次に、図1(a),(b)および図2に示すように、半導体基板2の受光面とした第1主面2aと、第1主面2aに対して反対側に位置して裏面(非受光面)とした第2主面2bとのそれぞれに、互いに異なる極性の電極を1種類ずつ設けている両面電極型太陽電池素子について説明する。なお、太陽電池素子1の発電部分に使用する材料は、その発電部分からの電力を取り出すための電極材料は限定されないが、以下、シリコン系太陽電池素子について説明する。
次に、両面電極型太陽電池素子の製造方法の一例について説明する。
次に、裏面とした第2主面側に、互いに異なる極性の2種類の電極を設けたバックコンタクト型太陽電池素子を説明する。
次に、バックコンタクト型太陽電池素子21の製造方法について説明する。
次に、両面電極型の太陽電池素子1において、第1主面2a側に設けたバスバー電極3を5000倍以上に拡大したSEM(Scanning Electron Microscope)写真を模写した図を図5および図6に示す。
本実施形態は上述したように、結晶のみからなる半導体基板を用いた太陽電池素子に限定されない。例えば、n型のシリコン基板の一方主面上に、i型およびp型のアモルファスシリコン層をこの順で製膜し、他方主面上に例えばi型およびn型のアモルファスシリコン層をこの順で製膜して、全体として1つの半導体基板を構成して、この半導体基板の上に電極を設けるようにしてもよい。このような太陽電池素子に対しても、本実施形態を適用することは可能であり、同様な作用・効果を期待することができる。
2、25:半導体基板
2a、21a:第1主面
2b、21b:第2主面
3:バスバー電極
4,22a:フィンガー電極
5、23a:集電電極
6、23b:出力取出電極
7:除去部
8、27:反射防止膜
9、26:逆導電型層(半導体層)
10:p型バルク領域
22b:貫通孔電極
22c:第1電極
23:第2電極
24:第3電極
26a:第1逆導電型層
26b:第2逆導電型層
26c:第3逆導電型層
28:電極用貫通孔
29a、29b:分離溝
30:高濃度ドープ層
31,33:第1金属領域
32,34:第2金属領域
Claims (11)
- 一導電型の第1半導体層と逆導電型の第2半導体層とを有する、結晶系のシリコンを用いた半導体基板と、発電電力を取り出すための電極とを備えており、
前記第2半導体層は、前記半導体基板の少なくとも第1主面に配置されているとともに、前記電極は、前記第2半導体層の上に配置された第1電極と、前記半導体基板の前記第1主面の反対側に位置する第2主面に配置された第2電極とを有している太陽電池素子であって、
前記第1電極および前記第2電極の少なくとも一方が、主成分として銀、銅およびニッケルを含有しており、100質量部の銀に対して、銅を60質量部以上90質量部以下で、ニッケルを7質量部以上10質量部以下で含有していることを特徴とする太陽電池素子。 - 前記電極のうち前記第2電極のみが、主成分として銀、銅およびニッケルを含有していることを特徴とする請求項1に記載の太陽電池素子。
- 前記第1電極は、前記半導体基板の前記第1主面側のみに配置されていることを特徴とする請求項1または2に記載の太陽電池素子。
- 前記第2半導体層は、前記半導体基板の前記第1主面および前記第2主面の両方に配置されていることを特徴とする請求項1乃至3のいずれかに記載の太陽電池素子。
- 前記半導体基板の前記第1主面および前記第2主面の間を貫通する複数の貫通孔と、これら貫通孔内に配置された導体とをさらに備え、前記第2半導体層は、前記貫通孔の内壁にも前記導体に接するように配置されており、
前記第1電極は、前記導体を介して、前記半導体基板の前記第2主面側にも導出されていることを特徴とする請求項4に記載の太陽電池素子。 - 前記導体は、主成分として銀、銅およびニッケルを含有していることを特徴とする請求項5に記載の太陽電池素子。
- 請求項1に記載の太陽電池素子の製造方法であって、前記第1電極および前記第2電極の少なくとも一方を、銀、銅およびニッケルを含有する導電ペーストを塗布した後に、該導電ペーストを焼成することによって形成することを特徴とする太陽電池素子の製造方法。
- 前記導電ペーストの塗布は、銅ニッケル合金粒子と銀とを含有する前記導電ペーストを用いて行なうことを特徴とする請求項7に記載の太陽電池素子の製造方法。
- 前記導電ペーストの塗布は、銀で表面が被覆された銅ニッケル合金粒子を含有する前記導電ペーストを用いて行なうことを特徴とする請求項8に記載の太陽電池素子の製造方法。
- 前記導電ペーストの塗布は、ニッケルで表面が被覆された銅粒子と銀とを含有する前記導電ペーストを用いて行なうことを特徴とする請求項7に記載の太陽電池素子の製造方法。
- 前記導電ペーストの塗布は、銀で表面が被覆された銅粒子とニッケルとを含有する前記導電ペーストを用いて行なうことを特徴とする請求項7に記載の太陽電池素子の製造方法。
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JP2012510672A JP5460860B2 (ja) | 2010-04-13 | 2011-04-13 | 太陽電池素子およびその製造方法 |
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US10056505B2 (en) | 2013-03-15 | 2018-08-21 | Inkron Ltd | Multi shell metal particles and uses thereof |
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US20160284913A1 (en) | 2015-03-27 | 2016-09-29 | Staffan WESTERBERG | Solar cell emitter region fabrication using substrate-level ion implantation |
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