JP5458185B2 - Substrate processing apparatus and method - Google Patents
Substrate processing apparatus and method Download PDFInfo
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- JP5458185B2 JP5458185B2 JP2012533072A JP2012533072A JP5458185B2 JP 5458185 B2 JP5458185 B2 JP 5458185B2 JP 2012533072 A JP2012533072 A JP 2012533072A JP 2012533072 A JP2012533072 A JP 2012533072A JP 5458185 B2 JP5458185 B2 JP 5458185B2
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- 239000000758 substrate Substances 0.000 title claims description 152
- 238000000034 method Methods 0.000 title description 11
- 239000000463 material Substances 0.000 claims description 137
- 238000001816 cooling Methods 0.000 claims description 80
- 238000007740 vapor deposition Methods 0.000 claims description 70
- 238000002347 injection Methods 0.000 claims description 52
- 239000007924 injection Substances 0.000 claims description 52
- 230000008021 deposition Effects 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 7
- 239000002826 coolant Substances 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 58
- 238000000151 deposition Methods 0.000 description 23
- 238000005019 vapor deposition process Methods 0.000 description 10
- 239000007921 spray Substances 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000008236 heating water Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
本発明は基板処理装置及び方法に係り、さらに詳しくは、基板が加熱されることを予防し、しかも、余剰の蒸着材料を効率よく捕集することのできる基板処理装置及び方法に関する。 The present invention relates to a substrate processing apparatus and method, and more particularly to a substrate processing apparatus and method that can prevent a substrate from being heated and that can efficiently collect surplus vapor deposition material.
太陽電池（Ｓｏｌａｒ Ｃｅｌｌ）は、例えば、太陽電池用の基板の上にセレニウム（Ｓｅ）或いはこれを含む化合物の薄膜を形成し、これを所定のパターンを有するようにパターニングして製作される。すなわち、ガラス基板の上に蒸発蒸着、化学気相蒸着（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ；ＣＶＤ）または物理気相蒸着（Ｐｈｙｓｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ；ＰＶＤ）などの蒸着方法により多数の薄膜層を形成し、これをパターニングして太陽電池を製作する。 A solar cell is manufactured by, for example, forming a thin film of selenium (Se) or a compound containing the same on a substrate for a solar cell and patterning the thin film with a predetermined pattern. That is, a plurality of thin film layers are formed on a glass substrate by a vapor deposition method such as evaporation, chemical vapor deposition (CVD), or physical vapor deposition (PVD), and patterned. To make solar cells.
この種の太陽電池用の蒸着材料は、気化装置において加熱されて気化された状態でガラス基板に供給される。これにより、気化された状態を維持したままで蒸着材料をガラス基板まで搬送するために、蒸着材料の搬送ライン及び噴射手段は加熱手段によって加熱される。このため、加熱される搬送ライン及び噴射手段によってチャンバー内部の温度が昇温し、これにより、チャンバーの内部のガラス基板が加熱されてしまう結果、蒸着材料の蒸着効率が低下するという問題がある。 This type of vapor deposition material for solar cells is supplied to the glass substrate in a state where it is heated and vaporized in the vaporizer. Thereby, in order to convey vapor deposition material to a glass substrate, maintaining the vaporized state, the conveyance line and injection means of vapor deposition material are heated by a heating means. For this reason, the temperature inside the chamber is raised by the heated transfer line and the spraying means, and as a result, the glass substrate inside the chamber is heated, resulting in a problem that the vapor deposition efficiency of the vapor deposition material is lowered.
また、蒸着材料の蒸着効率が低下するに伴い、ガラス基板に蒸着できなかった余剰の蒸着材料はチャンバーの内壁またはチャンバー内部の各種の構成品の外周面に蒸着されて装置が汚れてしまう結果、装置の寿命が短縮するという問題がある。 In addition, as the deposition efficiency of the deposition material decreases, surplus deposition material that could not be deposited on the glass substrate is deposited on the inner wall of the chamber or the outer peripheral surface of various components inside the chamber, resulting in the device becoming dirty. There is a problem that the lifetime of the apparatus is shortened.
本発明は上記の問題点を解消するために案出されたものであり、その目的は、チャンバーの内部における蒸着工程が行われる成膜区間を集中して冷却して、成膜区間に引き込まれる基板が加熱されることを防いで蒸着材料の蒸着効率を向上させることのできる基板処理装置及び方法を提供するところにある。 The present invention has been devised to solve the above-mentioned problems, and its purpose is to concentrate and cool the film forming section where the vapor deposition process is performed inside the chamber and to be drawn into the film forming section. An object of the present invention is to provide a substrate processing apparatus and method capable of improving the deposition efficiency of a deposition material by preventing the substrate from being heated.
また、本発明の他の目的は、成膜区間内に余剰の蒸着材料を捕集できる手段を設けて、余剰の蒸着材料による装置の汚染を防いで装置の寿命を延ばすことのできる基板処理装置及び方法を提供するところにある。 In addition, another object of the present invention is to provide a substrate processing apparatus capable of extending the life of the apparatus by providing means capable of collecting surplus vapor deposition material in the film forming section, preventing contamination of the apparatus with surplus vapor deposition material. And providing a method.
本発明の一実施の形態による基板処理装置は、引込み区間と、成膜区間及び引出し区間を含む内部空間を有するチャンバー部と、前記チャンバー部の成膜区間に位置して搬送される基板に蒸着材料を吹き付ける少なくとも１以上の材料噴射ノズル部と、前記チャンバー部の成膜区間を囲繞するように位置して成膜区間の内部を冷却する冷却プレート部と、を備える。 A substrate processing apparatus according to an embodiment of the present invention includes a chamber section having an internal space including a drawing section, a film forming section and a drawing section, and vapor deposition on a substrate that is transported in the film forming section of the chamber section. And at least one material spray nozzle for spraying the material, and a cooling plate for cooling the inside of the film formation section so as to surround the film formation section of the chamber section.
前記基板処理装置は、前記チャンバー部の成膜区間の上面及び下面にそれぞれ形成された上部貫通孔及び下部貫通孔と、前記上部貫通孔及び下部貫通孔にそれぞれ着脱自在に配設された上部カバー及び下部カバーと、をさらに備え、前記冷却プレート部は、少なくとも前記上部カバー及び下部カバーにそれぞれ一体的に設けられる上部冷却プレート及び下部冷却プレートを備える。 The substrate processing apparatus includes an upper through hole and a lower through hole formed on an upper surface and a lower surface of a film forming section of the chamber portion, and an upper cover detachably disposed in the upper through hole and the lower through hole, respectively. And a lower cover, and the cooling plate portion includes at least an upper cooling plate and a lower cooling plate that are integrally provided on the upper cover and the lower cover, respectively.
また、前記基板処理装置において、前記冷却プレート部は、前記チャンバー部の引込み区間と成膜区間との間、及び成膜区間と引出し区間との間に位置する第１及び第２の側部冷却プレートを備える。 Further, in the substrate processing apparatus, the cooling plate section is provided with first and second side cooling portions located between the drawing section and the film forming section of the chamber section and between the film forming section and the drawing section. Provide a plate.
さらに、前記基板処理装置は、前記チャンバー部の引込み区間と成膜区間との間の境界部、及び成膜区間と引出し区間との間の境界部に対応する前記チャンバー部の一方の側壁に形成された第１及び第２の側部貫通孔と、前記第１及び第２の側部貫通孔にそれぞれ着脱自在に配設された第１及び第２の側部カバーと、をさらに備え、前記第１及び第２の側部冷却プレートは、前記第１及び第２の側部カバーにそれぞれ一体的に設けられる。 Further, the substrate processing apparatus is formed on one side wall of the chamber portion corresponding to a boundary portion between the drawing section and the film forming section of the chamber portion and a boundary portion between the film forming section and the drawing section. The first and second side through holes, and the first and second side covers detachably disposed in the first and second side through holes, respectively, The first and second side cooling plates are integrally provided on the first and second side covers, respectively.
さらに、前記基板処理装置において、前記チャンバー部の引込み区間と成膜区間との間の境界部、及び成膜区間と引出し区間との間の境界部に対応する下面の上にはそれぞれ滑走部が形成され、前記第１及び第２の側部冷却プレートは、前記滑走部の上をそれぞれ滑走して、前記チャンバー部の内部空間に引き込まれたり、前記チャンバー部の内部空間から引き出される。 Furthermore, in the substrate processing apparatus, sliding portions are respectively provided on a boundary portion between the drawing section and the film forming section of the chamber portion and a lower surface corresponding to a boundary portion between the film forming section and the drawing section. The first side cooling plate and the second side cooling plate are slid on the sliding portion and drawn into the internal space of the chamber portion or pulled out from the internal space of the chamber portion.
さらに、前記基板処理装置は、前記材料噴射ノズル部の下方に位置して前記材料噴射ノズル部から吹き付けられる蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料を捕集する少なくとも１以上のコールドトラップ部をさらに備える。 Further, the substrate processing apparatus includes at least one cold collector that collects an excess vapor deposition material that is positioned below the material injection nozzle unit and that cannot be deposited on the substrate among the vapor deposition materials sprayed from the material injection nozzle unit. A trap part is further provided.
本発明の他の実施の形態による基板処理装置は、引込み区間と、成膜区間及び引出し区間を含む内部空間を有するチャンバー部と、前記チャンバー部の成膜区間に位置して搬送される基板に蒸着材料を吹き付ける少なくとも１以上の材料噴射ノズル部と、前記材料噴射ノズル部の下方に位置して前記材料噴射ノズル部から吹き付けられる蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料を捕集する少なくとも１以上のコールドトラップ部と、を備える。 According to another embodiment of the present invention, there is provided a substrate processing apparatus including a drawing section, a chamber portion having an internal space including a film forming section and a drawing section, and a substrate transported in the film forming section of the chamber section. At least one or more material injection nozzles for spraying the vapor deposition material, and an excess of the vapor deposition material that is positioned below the material injection nozzle and is sprayed from the material spray nozzle that could not be evaporated on the substrate And at least one cold trap section.
前記基板処理装置において、前記コールドトラップ部は、前記材料噴射ノズル部が配設される領域の下部エリアをカバーするように配設されるベース面と、前記ベース面から立設される多数のヒートシンクと、前記ヒートシンクに形成されて冷却水が流動する冷却流路と、少なくとも前記ベース面の一方の側を支持する支持カバーと、を備える。 In the substrate processing apparatus, the cold trap portion includes a base surface disposed so as to cover a lower area of a region where the material injection nozzle portion is disposed, and a plurality of heat sinks erected from the base surface. And a cooling channel that is formed in the heat sink and through which cooling water flows, and a support cover that supports at least one side of the base surface.
さらに、前記基板処理装置において、前記チャンバー部の一方の側壁のうち前記材料噴射ノズル部が配設される領域の下部領域には少なくとも１以上の第３の側部貫通孔が形成され、前記支持カバーは前記第３の側部貫通孔に着脱自在に配設されて、前記支持カバーを着脱する際に前記コールドトラップ部も一体的に取り替える。 Further, in the substrate processing apparatus, at least one or more third side through-holes are formed in a lower region of the region where the material injection nozzle portion is disposed on one side wall of the chamber portion, and the support The cover is detachably disposed in the third side through hole, and the cold trap portion is also replaced integrally when the support cover is attached / detached.
さらに、前記基板処理装置において、前記多数のヒートシンクは互いに離間して立設され、それぞれのヒートシンクは、前記ベース面から前記材料噴射ノズル部の長さよりも長く延びて立設され、それぞれのヒートシンクの上端の高さは、両外郭に配設されるヒートシンクから前記コールドトラップ部の中心部に向かって漸減する。 Further, in the substrate processing apparatus, the plurality of heat sinks are provided to stand apart from each other, and each heat sink extends from the base surface so as to extend longer than the length of the material injection nozzle portion. The height of the upper end gradually decreases from the heat sinks disposed on both outlines toward the center of the cold trap portion.
さらに、前記基板処理装置において、前記冷却流路は、前記ヒートシンクの外周面のうちコールドトラップ部の中心に向かう外面の表面に形成される。 Furthermore, in the substrate processing apparatus, the cooling channel is formed on an outer surface of the outer peripheral surface of the heat sink that faces the center of the cold trap portion.
さらに、前記基板処理装置において、前記コールドトラップ部が配設される前記チャンバー部の下面の上には少なくとも１以上の滑走部が形成され、前記コールドトラップ部のベース面は前記滑走部の上をそれぞれ滑走して、前記チャンバー部の内部空間に引き込まれたり、前記チャンバー部の内部空間から引き出される。 Further, in the substrate processing apparatus, at least one sliding portion is formed on a lower surface of the chamber portion where the cold trap portion is disposed, and a base surface of the cold trap portion is formed on the sliding portion. Each slides and is pulled into the internal space of the chamber part or pulled out from the internal space of the chamber part.
さらに、前記基板処理装置は、前記チャンバー部の成膜区間を囲繞するように位置して成膜区間の内部を冷却する冷却プレート部をさらに備える。 Furthermore, the substrate processing apparatus further includes a cooling plate portion that is positioned so as to surround the film formation section of the chamber portion and cools the inside of the film formation section.
さらに、前記基板処理装置は、前記チャンバー部の内部空間に位置して基板を前記引込み区間と、成膜区間及び引出し区間の順に搬送する基板搬送部をさらに備える。 Furthermore, the substrate processing apparatus further includes a substrate transport unit that is located in the internal space of the chamber unit and transports the substrate in the order of the drawing section, the film forming section, and the drawing section.
さらに、前記基板処理装置において、前記基板搬送部は、前記チャンバー部の引込み区間に設けられる多数の第１のローラーと、前記チャンバー部の成膜区間に設けられる少なくとも２以上の第２のローラーと、前記チャンバー部の引出し区間に設けられる少なくとも２以上の第３のローラーと、を備え、前記第１のローラーの内部には冷却媒体が供給されて冷却され、前記第２のローラーの内部には冷却媒体及び加熱媒体が選択的に供給されて冷却または加熱される。 Furthermore, in the substrate processing apparatus, the substrate transport unit includes a plurality of first rollers provided in a drawing section of the chamber unit, and at least two or more second rollers provided in a film forming section of the chamber unit. , At least two or more third rollers provided in the drawer section of the chamber portion, and a cooling medium is supplied to the inside of the first roller to be cooled, and the inside of the second roller is A cooling medium and a heating medium are selectively supplied to cool or heat.
さらに、前記基板処理装置において、前記材料噴射ノズル部は、内部に蒸着材料が供給される供給流路が形成されて蒸着材料を吹き付けるリニアノズルと、前記リニアノズルの側部及び上部を囲繞するレフレクターと、を備える。 Further, in the substrate processing apparatus, the material injection nozzle unit includes a linear nozzle that forms a supply flow path through which a vapor deposition material is supplied and sprays the vapor deposition material, and a reflector that surrounds a side portion and an upper portion of the linear nozzle. And comprising.
さらに、前記基板処理装置において、前記レフレクターは、多数枚の板体が互いに離間して重なり合って配設される。 Further, in the substrate processing apparatus, the reflector is arranged such that a large number of plates are separated from each other and overlapped.
本発明のさらに他の実施形態による基板処理方法は、チャンバー部の内部空間のうち蒸着工程が行われる成膜区間を冷却するステップと、前記成膜区間に基板を引き込ませるステップと、前記基板に蒸着材料を吹き付けて薄膜層を形成するステップと、吹き付けられた蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料をコールドトラップ部に捕集するステップと、成膜区間から基板を引き出すステップと、前記コールドトラップ部を取り替えるステップと、を含む。 According to still another embodiment of the present invention, there is provided a substrate processing method, comprising: cooling a film formation section in which an evaporation process is performed in an internal space of a chamber unit; drawing a substrate into the film formation section; A step of spraying a deposition material to form a thin film layer, a step of collecting excess deposition material that could not be deposited on the substrate among the sprayed deposition materials, and a step of extracting the substrate from the deposition section , Replacing the cold trap portion.
前記基板処理方法は、前記成膜区間に基板を引き込ませるステップの前に、前記基板を予め冷却するステップをさらに含む。 The substrate processing method further includes a step of cooling the substrate in advance before the step of drawing the substrate into the film formation section.
前記基板処理方法において、前記基板に薄膜層を形成するステップにおいては、前記成膜区間に設けられる少なくとも２以上の材料噴射ノズル部を交互に作動させて蒸着材料の噴射を連続して行う。 In the substrate processing method, in the step of forming a thin film layer on the substrate, at least two or more material injection nozzle portions provided in the film forming section are alternately operated to continuously spray the vapor deposition material.
本発明によれば、装置の内部における、基板の加熱が起こるような環境的な要因を最大限に排除するとともに、基板を直接的または間接的に冷却することにより、蒸着材料の基板への蒸着効率を高めることができる。 According to the present invention, the deposition of the deposition material onto the substrate is eliminated by maximally eliminating the environmental factors that cause the heating of the substrate inside the apparatus and cooling the substrate directly or indirectly. Efficiency can be increased.
また、本発明によれば、蒸着材料の蒸着工程時に発生する余剰の蒸着材料を捕集する手段を備えて、余剰の蒸着材料によって装置の内部が汚れることを防ぐことにより、装置の寿命を延ばすことができる。 In addition, according to the present invention, a means for collecting surplus vapor deposition material generated during the vapor deposition process of the vapor deposition material is provided, and the life of the apparatus is extended by preventing the inside of the apparatus from being contaminated by the surplus vapor deposition material. be able to.
さらに、本発明によれば、装置の内部の成膜区間の周りに設けられて反応空間を冷却する冷却手段及び余剰の蒸着材料を捕集する手段を装置に手軽に着脱可能にできる。従って、汚染部品を選別的に取り替え可能にすることにより、装置のメンテナンスを容易に行うことができる。 Furthermore, according to the present invention, the cooling means for cooling the reaction space and the means for collecting excess vapor deposition material provided around the film forming section inside the apparatus can be easily attached to and detached from the apparatus. Therefore, the maintenance of the apparatus can be easily performed by making it possible to selectively replace the contaminated parts.
さらに、チャンバーの成膜区間に蒸着材料を供給する手段を少なくとも２以上設けて、蒸着材料の供給及び充填を順次に行うことにより、蒸着材料の蒸着工程を連続して行うことができる。 Further, by providing at least two or more means for supplying the vapor deposition material to the film forming section of the chamber and sequentially supplying and filling the vapor deposition material, the vapor deposition material vapor deposition process can be continuously performed.
本発明の他の特徴および利点は、添付図面と結び付けて説明する以下の記載から明らかになるであろう。 Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings.
以下、添付図面に基づき、本発明を詳述する。しかしながら、本発明は後述する実施形態に限定されるものではなく、相異なる形態で実現され、単にこれらの実施形態は本発明の開示を完全たるものとし、通常の知識を持った者に発明の範疇を完全に知らせるために提供されるものである。図中、同じ符号は同じ構成要素を示す。 Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but can be realized in different forms. These embodiments merely complete the disclosure of the present invention, and can be used by those who have ordinary knowledge. It is provided to fully inform the category. In the drawings, the same reference numerals indicate the same components.
図１は、本発明の一実施の形態による基板処理装置を概略的に示す縦断面概念図であり、図２は、本発明の一実施の形態による基板処理装置における要部の脱着動作を概略的に示す縦断面概念図であり、図３は、本発明の一実施の形態による基板処理装置を概略的に示す横断面概念図であり、図４は、本発明の一実施の形態による基板処理装置における要部の脱着動作を概略的に示す横断面概念図であり、図５及び図６は、本発明の一実施の形態による基板処理装置の材料噴射ノズル部を示す図であり、そして図７及び図８は、本発明の一実施の形態による基板処理装置のコールドトラップ部を示す図である。 FIG. 1 is a schematic longitudinal sectional view showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. FIG. 3 is a conceptual cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a substrate according to an embodiment of the present invention. FIG. 5 and FIG. 6 are diagrams schematically showing a material injection nozzle portion of a substrate processing apparatus according to an embodiment of the present invention; 7 and 8 are views showing a cold trap portion of the substrate processing apparatus according to one embodiment of the present invention.
同図に示すように、本発明の一実施の形態による基板処理装置は、引込み区間１２１と、成膜区間１２３及び引出し区間１２５がこの順に画成される内部空間を有するチャンバー部１００と、前記チャンバー部１００の内部空間に位置して基板を前記引込み区間１２１と、成膜区間１２３及び引出し区間１２５の順に搬送する基板搬送部２００と、前記チャンバー部１００の成膜区間１２３に位置して搬送される基板に蒸着材料を吹き付ける少なくとも１以上の材料噴射ノズル部３００と、前記チャンバー部１００の成膜区間１２３を囲繞するように位置して成膜区間１２３の内部を冷却する冷却プレート部４００と、前記材料噴射ノズル部３００の下方に位置して前記材料噴射ノズル部３００から吹き付けられる蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料を捕集する少なくとも１以上のコールドトラップ部５００と、を備える。 As shown in the figure, a substrate processing apparatus according to an embodiment of the present invention includes a drawing section 121, a chamber section 100 having an internal space in which a film forming section 123 and a drawing section 125 are defined in this order, Located in the internal space of the chamber 100, the substrate is transported in the order of the drawing section 121, the film forming section 123, and the drawing section 125 in that order, and the substrate transport section 200 in the chamber section 100. At least one material injection nozzle unit 300 for spraying a deposition material on the substrate to be formed, and a cooling plate unit 400 that is positioned so as to surround the film forming section 123 of the chamber unit 100 and cools the inside of the film forming section 123; Vapor deposition on the substrate among the deposition materials sprayed from the material injection nozzle unit 300 located below the material injection nozzle unit 300 Comprising at least one or more of the cold trap 500 for collecting excess deposition material was not come, the.
チャンバー部１００は、一方の面及び他方の面に基板の引込み及び引出しのための出入口１１０ａ、１１０ｂが設けられる。また、前記チャンバー部１００は、前記出入口１１０ａ、１１０ｂを遮蔽するスロット弁１１１ａ、１１１ｂまたはゲート弁をさらに備えていてもよい。このとき、前記チャンバー部１００は、スロット弁１１１ａ、１１１ｂを介して基板の引込み及び引出しのための待ち空間、例えば、ロードロック室と接続されていてもよい。なお、基板が引き込まれる出入口１１０ａ、１１０ｂは、基板を予備処理、例えば、冷却する冷却チャンバーと接続されていてもよい。 The chamber portion 100 is provided with doorways 110a and 110b for drawing and drawing the substrate on one surface and the other surface. The chamber unit 100 may further include slot valves 111a and 111b or gate valves that shield the entrances 110a and 110b. At this time, the chamber unit 100 may be connected to a waiting space for pulling in and pulling out the substrate, for example, a load lock chamber, through the slot valves 111a and 111b. The entrances 110a and 110b into which the substrate is drawn may be connected to a cooling chamber for preliminarily processing the substrate, for example, cooling it.
そして、前記チャンバー部１００の内部空間は、基板が引き込まれて搬送される引込み区間１２１と、基板に対して蒸着工程が行われる成膜区間１２３及び蒸着済みの基板が引き出されて搬送される引出し区間１２５がこの順に画成される。このとき、前記引込み区間１２１と、成膜区間１２３及び引出し区間１２５は隔壁によって物理的に分離されたというよりは、基板の搬送及び蒸着工程の実施によって機能的に画成されることが好ましい。もちろん、本発明はこれに限定されるものではなく、引込み区間１２１と、成膜区間１２３及び引出し区間１２５の境界面に隔壁を設けて物理的に画成してもよい。なお、それぞれ引込み区間１２１と、成膜区間１２３及び引出し区間１２５の役割を果たす多数のチャンバーを互いに連通させてもよい。 The internal space of the chamber unit 100 includes a drawing section 121 where the substrate is drawn and transported, a film forming section 123 where the deposition process is performed on the substrate, and a drawer where the deposited substrate is pulled out and transported. A section 125 is defined in this order. At this time, it is preferable that the drawing section 121, the film forming section 123, and the drawing section 125 are functionally defined by carrying a substrate and performing a deposition process, rather than being physically separated by a partition wall. Of course, the present invention is not limited to this, and a partition wall may be provided on the boundary surface between the drawing section 121, the film forming section 123, and the drawing section 125 to physically define the section. It should be noted that a plurality of chambers each serving as the drawing section 121, the film forming section 123, and the drawing section 125 may be communicated with each other.
また、図示の如く、チャンバー部１００の上面及び下面には、それぞれ上部貫通孔１３１及び下部貫通孔１３３が形成され、前記上部貫通孔１３１には、後述する前記冷却プレート部４００の上部カバー４１１及び下部カバー４２１がそれぞれ挿着されて前記上部貫通孔１３１及び下部貫通孔１３３をそれぞれ遮蔽する。そして、チャンバー部１００の引込み区間１２１と成膜区間１２３との間の境界部、及び成膜区間１２３と引出し区間１２５との間の境界部に対応する前記チャンバー部１００の一方の側壁には、第１及び第２の側部貫通孔１３５ａ、１３５ｂが形成され、前記第１及び第２の側部貫通孔１３５ａ、１３５ｂには、後述する前記冷却プレート部４００の第１及び第２の側部カバー４３１ａ、４３１ｂがそれぞれ挿着されて前記第１及び第２の側部貫通孔１３５ａ、１３５ｂをそれぞれ遮蔽する。なお、チャンバー部１００の一方の側壁のうち前記材料噴射ノズル部３００が配設される領域の下部領域には少なくとも１以上の第３の側部貫通孔１３７ａ、１３７ｂが形成され、前記第３の側部貫通孔１３７ａ、１３７ｂには、後述する前記コールドトラップ部５００の支持カバー５４０がそれぞれ挿着されて前記第３の側部貫通孔１３７ａ、１３７ｂをそれぞれ遮蔽する。 Further, as shown in the drawing, an upper through hole 131 and a lower through hole 133 are formed on the upper surface and the lower surface of the chamber part 100, respectively. A lower cover 421 is inserted and shielded from the upper through hole 131 and the lower through hole 133, respectively. And on one side wall of the chamber part 100 corresponding to the boundary part between the drawing section 121 and the film forming section 123 of the chamber part 100 and the boundary part between the film forming section 123 and the drawing section 125, First and second side through holes 135a and 135b are formed, and the first and second side through holes 135a and 135b include first and second side parts of the cooling plate part 400, which will be described later. Covers 431a and 431b are respectively inserted and shielded from the first and second side through holes 135a and 135b, respectively. In addition, at least one or more third side through holes 137a and 137b are formed in the lower region of the one side wall of the chamber portion 100 where the material injection nozzle portion 300 is disposed. A support cover 540 of the cold trap portion 500 to be described later is inserted into the side through holes 137a and 137b, respectively, and shields the third side through holes 137a and 137b.
このため、スロット弁１１１ａ、１１１ｂによって前記出入口１１０ａ、１１０ｂが遮蔽され、冷却プレート部４００及びコールドトラップ部５００によって上部貫通孔１３１及び下部貫通孔１３３と第１乃至第３の側部貫通孔１３５ａ、１３５ｂ、１３７ａ、１３７ｂが遮蔽されると、チャンバー部１００の内部空間が密閉される。このため、前記冷却プレート部４００及びコールドトラップ部５００は、封止方式によって着脱自在にチャンバー部１００に取り付けられる。 For this reason, the slots 110a and 111b shield the entrances 110a and 110b, and the cooling plate portion 400 and the cold trap portion 500 allow the upper through hole 131 and the lower through hole 133 and the first to third side through holes 135a, When 135b, 137a, and 137b are shielded, the internal space of the chamber portion 100 is sealed. Therefore, the cooling plate part 400 and the cold trap part 500 are detachably attached to the chamber part 100 by a sealing method.
基板搬送部２００は、前記チャンバー部１００の引込み区間１２１に設けられる多数の第１のローラー２１０と、前記チャンバー部１００の成膜区間１２３に設けられる少なくとも２以上の第２のローラー２２０ａ、２２０ｂと、前記チャンバー部１００の引出し区間１２５に設けられる少なくとも２以上の第３のローラー２３０と、を備える。前記第１乃至第３のローラー２１０、２２０、２３０は、その上面に基板が載置されると、別途の駆動手段（図示せず）によって回転して基板を搬送する手段である。 The substrate transport unit 200 includes a plurality of first rollers 210 provided in the drawing section 121 of the chamber unit 100 and at least two or more second rollers 220a and 220b provided in the film forming section 123 of the chamber unit 100. And at least two or more third rollers 230 provided in the drawer section 125 of the chamber unit 100. The first to third rollers 210, 220, and 230 are means for conveying the substrate by rotating by a separate driving means (not shown) when the substrate is placed on the upper surface thereof.
このとき、前記第１のローラー２１０は、内部に冷却媒体、例えば、冷却水が供給されて冷却され、前記第２のローラー２２０は、内部に冷却媒体及び加熱媒体、例えば、冷却水及び加熱水が選択的に供給されて冷却または加熱される。 At this time, the first roller 210 is cooled by being supplied with a cooling medium, for example, cooling water, and the second roller 220 is internally cooled with a cooling medium and a heating medium, for example, cooling water and heating water. Is selectively supplied and cooled or heated.
特に、前記第１のローラー２１０は、引込み区間１２１に引き込まれた基板を成膜区間１２３に搬送する手段であり、引込み区間１２１に引き込まれる基板を冷却する。このため、前記第１のローラー２１０は、第２のローラー２２０に比べて相対的に密集して配設されることにより、基板と第１のローラー２１０との間の接触面積を増大させて第１のローラー２１０による基板の冷却効率を高める。 In particular, the first roller 210 is a means for transporting the substrate drawn into the drawing section 121 to the film forming section 123, and cools the substrate drawn into the drawing section 121. For this reason, the first roller 210 is disposed relatively densely compared to the second roller 220, thereby increasing the contact area between the substrate and the first roller 210. The cooling efficiency of the substrate by one roller 210 is increased.
前記第２のローラー２２０及び第３のローラー２３０は、それぞれ成膜区間１２３及び引出し区間１２５に配設されて引込み区間１２１から搬送されてきた基板を成膜区間１２３及び引出し区間１２５に搬送する手段であり、その数は、基板の長さを考慮して、基板を搬送できる最小数に決められることが好ましい。例えば、前記第２のローラー２２０及び第３のローラー２３０は、成膜区間１２３及び引出し区間１２５の先端部及び後端部にそれぞれ一本ずつ配設される。この実施の形態においては、成膜区間に第２のローラー２２０ａ、２２０ｂを４本、引出し区間１２５に第３のローラー２３０を２本配設している。 The second roller 220 and the third roller 230 are disposed in the film forming section 123 and the drawing section 125, respectively, and are means for transporting the substrate transferred from the drawing section 121 to the film forming section 123 and the drawing section 125, respectively. The number is preferably determined to be the minimum number capable of transporting the substrate in consideration of the length of the substrate. For example, the second roller 220 and the third roller 230 are disposed one by one at the leading end and the trailing end of the film forming section 123 and the drawing section 125, respectively. In this embodiment, four second rollers 220 a and 220 b are arranged in the film forming section, and two third rollers 230 are arranged in the drawing section 125.
とりわけ、前記第２のローラー２２０ａ、２２０ｂは、冷却作用及び加熱作用を選択的に行うことができるので、蒸着工程中に第２のローラー２２０ａ、２２０ｂを加熱することにより、材料噴射ノズル部３００から吹き付けられた蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料が第２のローラー２２０ａ、２２０ｂに張り付いて第２のローラー２２０ａ、２２０ｂの表面が汚れることを防ぐことができる。一方、蒸着材料の蒸着率を高めるためには、第２のローラー２２０ａ、２２０ｂを冷却して、第２のローラー２２０ａ、２２０ｂに接触して搬送される基板を冷却してもよい。 In particular, since the second rollers 220a and 220b can selectively perform a cooling action and a heating action, by heating the second rollers 220a and 220b during the deposition process, It is possible to prevent surplus vapor deposition material that could not be vapor-deposited on the substrate from the sprayed vapor deposition material from adhering to the second rollers 220a and 220b and soiling the surfaces of the second rollers 220a and 220b. On the other hand, in order to increase the vapor deposition rate of the vapor deposition material, the second rollers 220a and 220b may be cooled to cool the substrate conveyed in contact with the second rollers 220a and 220b.
材料噴射ノズル部３００は、前記チャンバー部１００の成膜区間１２３に少なくとも１以上設けられて基板に蒸着材料を吹き付ける手段であり、蒸着工程を連続して行うために、材料噴射ノズル部３００は２以上設けられることが好ましい。この実施の形態においては、２つの材料噴射ノズル部３００を配設している。このため、蒸着工程中には一方の材料噴射ノズル部３００（３１０ａ、３２０ａ）を作動させて基板に蒸着材料を吹き付け、もう一方の材料噴射ノズル部３００（３１０ｂ、３２０ｂ）を予熱しておき、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）の蒸着材料供給装置（図示せず）に充填されていた蒸着材料が使い尽くされて蒸着材料の詰め替えが必要となった場合に、もう一方の材料噴射ノズル部３００（３１０ｂ、３２０ｂ）を直ちに作動可能にする。この状態で、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）の作動を止めるとともに、もう一方の材料噴射ノズル部３００（３１０ｂ、３２０ｂ）を作動させて基板に蒸着材料を供給することにより、蒸着工程を連続して行うことができる。このとき、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）と接続されている蒸着材料供給装置に蒸着材料を詰め込む。このように２つの材料噴射ノズル部３００を交互に用いることにより、基板の蒸着工程を連続して行うことが可能になる。 The material injection nozzle unit 300 is a unit that is provided in at least one film forming section 123 of the chamber unit 100 and sprays a deposition material onto the substrate. It is preferable to be provided as described above. In this embodiment, two material injection nozzle portions 300 are provided. For this reason, during the vapor deposition process, one material injection nozzle unit 300 (310a, 320a) is operated to spray the vapor deposition material on the substrate, and the other material injection nozzle unit 300 (310b, 320b) is preheated, When the vapor deposition material filled in the vapor deposition material supply device (not shown) of the previously operated material injection nozzle unit 300 (310a, 320a) has been used up, it is necessary to refill the vapor deposition material. One material injection nozzle part 300 (310b, 320b) is immediately operable. In this state, the operation of the material injection nozzle unit 300 (310a, 320a) previously operated is stopped and the other material injection nozzle unit 300 (310b, 320b) is operated to supply the deposition material to the substrate. Thus, the vapor deposition process can be performed continuously. At this time, the vapor deposition material is packed into the vapor deposition material supply device connected to the material injection nozzle unit 300 (310a, 320a) that has been operated first. Thus, by alternately using the two material injection nozzle units 300, it is possible to continuously perform the substrate deposition process.
前記それぞれの材料噴射ノズル部３００は、内部に蒸着材料が供給される供給流路３１１が形成され、蒸着材料を線形に吹き付ける噴射口３１３が形成されるリニアノズル３１０と、前記リニアノズル３１０の側部及び上部を囲繞するレフレクター３２０と、を備える。このとき、前記リニアノズル３１０は、チャンバー部１００に別途外付けの蒸着材料供給装置（図示せず）に接続される。 Each of the material injection nozzles 300 includes a linear nozzle 310 in which a supply flow path 311 into which a vapor deposition material is supplied is formed, and an injection port 313 for spraying the vapor deposition material linearly, and the linear nozzle 310 side. And a reflector 320 surrounding the part and the upper part. At this time, the linear nozzle 310 is connected to the chamber unit 100 by a separate vapor deposition material supply device (not shown).
前記リニアノズル３１０の長さは、基板の幅よりも僅かに短いことが好ましい。これは、リニアノズル３１０から吹き付けられる蒸着材料が無駄に基板の外部に吹き付けられることを防いで、蒸着材料の消耗量を減らすためである。なお、リニアノズル３１０の長さを基板の幅よりもやや短くして基板の両端部に蒸着材料の未蒸着部分を形成する理由は、この部分が基板の後処理工程中に不要になったり切り欠かれる部分になるためである。 The length of the linear nozzle 310 is preferably slightly shorter than the width of the substrate. This is because the vapor deposition material sprayed from the linear nozzle 310 is prevented from being sprayed to the outside of the substrate and the consumption amount of the vapor deposition material is reduced. The reason why the length of the linear nozzle 310 is slightly shorter than the width of the substrate to form an undeposited portion of the vapor deposition material at both ends of the substrate is that this portion becomes unnecessary during the post-treatment process of the substrate. This is because it becomes a missing part.
そして、前記リニアノズル３１０の噴射口３１３を、搬送される基板寄りに配設することが好ましい。例えば、前記噴射口３１３と基板との間の間隔は２０ｍｍ以下であることが好ましく、できる限り前記噴射口３１３と基板との間の間隔を狭めることが好ましい。これにより、噴射口３１３から吹き付けられる蒸着材料が直ちに基板に蒸着されて、蒸着材料のロスが生じることを極力抑えることができる。 And it is preferable to arrange | position the injection port 313 of the said linear nozzle 310 near the board | substrate conveyed. For example, the distance between the ejection port 313 and the substrate is preferably 20 mm or less, and it is preferable to narrow the distance between the ejection port 313 and the substrate as much as possible. Thereby, it can suppress as much as possible that the vapor deposition material sprayed from the injection nozzle 313 is vapor-deposited on a board | substrate immediately, and the loss of vapor deposition material arises.
また、前記リニアノズル３１０は、気化された蒸着材料の移動または噴射を行う手段であり、約２００〜３００℃に加熱された状態を保つ。これにより、リニアノズル３１０から放熱される熱によってチャンバー部１００の内部及び基板が加熱されてしまうことを防ぐために、前記リニアノズル３１０の周りにレフレクター３２０を設ける。このとき、前記レフレクター３２０は、熱遮断効果を増大させるために、多数枚の板体を互いに離間して重ねて配設することが好ましい。このとき、板体の枚数は、リニアノズル３１０の温度及びレフレクター３２０の熱遮断効果によって選択的に決められる。例えば、最外郭に配設される板体の温度がリニアノズル３１０の温度よりは低く、且つ、蒸着材料が蒸着され易い温度である約７０℃よりも高く維持することが好ましい。 The linear nozzle 310 is a means for moving or jetting the vaporized vapor deposition material, and keeps the state heated to about 200 to 300 ° C. Accordingly, a reflector 320 is provided around the linear nozzle 310 in order to prevent the inside of the chamber unit 100 and the substrate from being heated by the heat radiated from the linear nozzle 310. At this time, the reflector 320 is preferably provided with a large number of plates separated from each other in order to increase the heat shielding effect. At this time, the number of plates is selectively determined by the temperature of the linear nozzle 310 and the heat blocking effect of the reflector 320. For example, it is preferable to maintain the temperature of the plate disposed on the outermost wall lower than the temperature of the linear nozzle 310 and higher than about 70 ° C., which is the temperature at which the deposition material is easily deposited.
冷却プレート部４００は、前記チャンバー部１００の成膜区間１２３を囲繞するように設けられて成膜区間１２３の内部を冷却する手段であり、成膜区間１２３の上部及び下部に配設される上部冷却プレート４１３及び下部冷却プレート４２３と、前記チャンバー部１００の引込み区間１２１と成膜区間１２３との間、及び成膜区間１２３と引出し区間１２５との間に位置する第１及び第２の側部冷却プレート４３３ａ、４３３ｂと、前記成膜区間１２３の前方側壁部及び後方側壁部に位置する側壁冷却プレート４４０ａ、４４０ｂと、を備える。 The cooling plate part 400 is a means for cooling the inside of the film forming section 123 provided so as to surround the film forming section 123 of the chamber part 100. The cooling plate 413 and the lower cooling plate 423, and first and second side portions located between the drawing section 121 and the film forming section 123 of the chamber unit 100 and between the film forming section 123 and the drawing section 125. Cooling plates 433a and 433b and side wall cooling plates 440a and 440b positioned on the front and rear side walls of the film forming section 123 are provided.
前記上部冷却プレート４１３及び下部冷却プレート４２３は、前記チャンバー部１００の上部貫通孔１３１及び下部貫通孔１３３に取り付けられる上部カバー４１１及び下部カバー４２１に固定ブラケット４１５、４２５によって一体的に固定される。このため、前記上部カバー４１１及び下部カバー４２１をチャンバー部１００に着脱する作業によって前記上部冷却プレート４１３及び下部冷却プレート４２３を手軽に取り外したり取り付けることができる。そして、この実施の形態においては、それぞれ１本の上部貫通孔１３１及び下部貫通孔１３３を形成し、これに対応して、それぞれ一つの前記上部カバー４１１及び下部カバー４２１を備えているが、本発明はこれに限定されるものではなく、装置の構成に応じて、上部貫通孔１３１及び下部貫通孔１３３を多数形成し、これに対応して、多数の上部カバー４１１及び下部カバー４２１を備えていてもよい。また、上部カバー４１１に取り付けられた上部冷却プレート４１３のように単一の冷却プレートを広い領域に亘って設けてもよく、下部カバー４２１に取り付けられた下部冷却プレート４２３のように所要の箇所に冷却プレートを多数散在させてもよい。この実施の形態において、下部冷却プレート４２３は多数散在させて、下部冷却プレート４２３が前記コールドトラップ部５００と重なる位置に配設されることを回避している。そして、前記上部カバー４１１と上部冷却プレート４１３をそれぞれ別々に設けることなく、前記上部カバー４１１が冷却プレートの役割を果たしてもよい。もちろん、前記下部カバー４２１と下部冷却プレート４２３も同様に、それぞれ別々に設けることなく、前記下部カバー４２１が冷却プレートの役割を果たしても良い。 The upper cooling plate 413 and the lower cooling plate 423 are integrally fixed to the upper cover 411 and the lower cover 421 attached to the upper through hole 131 and the lower through hole 133 of the chamber unit 100 by fixing brackets 415 and 425. For this reason, the upper cooling plate 413 and the lower cooling plate 423 can be easily removed or attached by the operation of attaching and detaching the upper cover 411 and the lower cover 421 to the chamber unit 100. In this embodiment, each of the upper through hole 131 and the lower through hole 133 is formed, and the upper cover 411 and the lower cover 421 are respectively provided corresponding thereto. The invention is not limited to this, and a large number of upper through-holes 131 and lower through-holes 133 are formed according to the configuration of the apparatus, and a large number of upper covers 411 and lower covers 421 are provided corresponding thereto. May be. In addition, a single cooling plate may be provided over a wide area, such as the upper cooling plate 413 attached to the upper cover 411, and at a required place like the lower cooling plate 423 attached to the lower cover 421. Many cooling plates may be interspersed. In this embodiment, a large number of lower cooling plates 423 are scattered to avoid the lower cooling plate 423 being disposed at a position overlapping the cold trap portion 500. The upper cover 411 may serve as a cooling plate without providing the upper cover 411 and the upper cooling plate 413 separately. Of course, the lower cover 421 and the lower cooling plate 423 may similarly serve as a cooling plate without providing them separately.
前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂは、前記チャンバー部１００の第１及び第２の側部貫通孔１３５ａ、１３５ｂに取り付けられる第１及び第２の側部カバー４３１ａ、４３１ｂに一体的に固定される。このため、前記第１及び第２の側部カバー４３１ａ、４３１ｂをチャンバー部１００に着脱する作業によって前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂを手軽に取り外したり取り付けることができる。特に、前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂを手軽に取り外したり取り付けるために、前記チャンバー部１００の引込み区間１２１と成膜区間１２３との間の境界部、及び成膜区間１２３と引出し区間１２５との間の境界部に対応する下面の上には滑走部１４０が形成され、前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂがそれぞれ前記滑走部１４０上を滑走して前記チャンバー部１００の内部空間に引き込まれたり、前記チャンバー部１００の内部空間から引き出される。この実施の形態においては、例えば、前記滑走部１４０としてレールを採用している。もちろん、第１及び第２の側部冷却プレート４３３ａ、４３３ｂを取り替える作業は、第１及び第２の側部冷却プレート４３３ａ、４３３ｂを滑走させる方式に限定されるものではなく、種々の方式が採用可能である。そして、前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂには、基板が通過する補助出入口４３５ａ、４３５ｂがそれぞれ形成される。 The first and second side cooling plates 433a and 433b are attached to first and second side covers 431a and 431b attached to the first and second side through holes 135a and 135b of the chamber part 100, respectively. It is fixed integrally. Therefore, the first and second side cooling plates 433a and 433b can be easily removed and attached by the operation of attaching and detaching the first and second side covers 431a and 431b to the chamber part 100. In particular, in order to easily remove and attach the first and second side cooling plates 433a and 433b, a boundary portion between the retracting section 121 and the film forming section 123 of the chamber portion 100, and a film forming section 123 are provided. A sliding part 140 is formed on a lower surface corresponding to a boundary between the first and second drawer sections 125, and the first and second side cooling plates 433a and 433b slide on the sliding part 140, respectively. It is drawn into the internal space of the chamber part 100 or pulled out from the internal space of the chamber part 100. In this embodiment, for example, a rail is employed as the sliding portion 140. Of course, the operation of replacing the first and second side cooling plates 433a and 433b is not limited to the method of sliding the first and second side cooling plates 433a and 433b, and various methods are adopted. Is possible. The first and second side cooling plates 433a and 433b are respectively formed with auxiliary doorways 435a and 435b through which the substrate passes.
また、前記側壁冷却プレート４４０ａ、４４０ｂは、前記成膜区間１２３の前方側壁部及び後方側壁部の内周面に設けられていてもよく、前方側壁部及び後方側壁部の内部に設けられていてもよい。このとき、前記側壁冷却プレート４４０ａ、４４０ｂは、前記成膜区間１２３の前方側壁部及び後方側壁部に設けられる設備、例えば、材料噴射ノズル部３００と、第２の搬送ローラー２２０及びコールドトラップ部３００の設置を妨げない範囲において種々に構成可能である。 The side wall cooling plates 440a and 440b may be provided on the inner peripheral surfaces of the front side wall and the rear side wall of the film forming section 123, and are provided inside the front side wall and the rear side wall. Also good. At this time, the side wall cooling plates 440a and 440b are installed on the front side wall and the rear side wall of the film forming section 123, for example, the material injection nozzle unit 300, the second transport roller 220, and the cold trap unit 300. Various configurations can be made within a range that does not hinder the installation of.
コールドトラップ部５００は、前記材料噴射ノズル部３００から吹き付けられる蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料を冷却して捕集する手段であり、前記材料噴射ノズル部３００の配設数に対応して設けられることが好ましい。 The cold trap unit 500 is a means for cooling and collecting excess vapor deposition material that could not be deposited on the substrate among the vapor deposition materials sprayed from the material injection nozzle unit 300, and the number of the material injection nozzle units 300 provided. It is preferable to be provided corresponding to.
前記コールドトラップ部５００は、前記材料噴射ノズル部３００が配設される領域の下部面積を含む領域に配設されるベース面５１０と、前記ベース面５１０から立設される多数のヒートシンク５２０と、前記ヒートシンク５２０に形成されて冷却水が流動する冷却流路５３０と、少なくとも前記ベース面５１０の一方の側を支持する支持カバー５４０と、を備える。 The cold trap unit 500 includes a base surface 510 disposed in a region including a lower area of a region where the material injection nozzle unit 300 is disposed, a plurality of heat sinks 520 standing from the base surface 510, A cooling flow path 530 that is formed in the heat sink 520 and through which cooling water flows, and a support cover 540 that supports at least one side of the base surface 510 are provided.
前記コールドトラップ部５００も、前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂと同様に、チャンバー部１００の一方の側壁を介して取り付けられる。このため、前記チャンバー部１００の一方の側壁のうち前記材料噴射ノズル部３００が配設される領域の下部領域には、少なくとも１以上の第３の側部貫通孔１３７ａ、１３７ｂが形成され、前記支持カバー５４０は、前記第３の側部貫通孔１３７ａ、１３７ｂに着脱自在に配設されて、前記支持カバー５４０の着脱により前記コールドトラップ部５００を一体的に手軽に取り外したり取り付ける。 The cold trap unit 500 is also attached via one side wall of the chamber unit 100, similarly to the first and second side cooling plates 433a and 433b. For this reason, at least one or more third side through-holes 137a and 137b are formed in a lower region of the region where the material injection nozzle unit 300 is disposed on one side wall of the chamber unit 100, The support cover 540 is detachably disposed in the third side through holes 137a and 137b, and the cold trap unit 500 can be easily removed and attached integrally by attaching and detaching the support cover 540.
このとき、前記多数のヒートシンク５２０は、略矩形板状に互いに離間して立設され、それぞれのヒートシンク５２０は前記ベース面５１０から前記材料噴射ノズル部３００、好ましくは、リニアノズル３１０よりも長く延びて立設される。このため、材料噴射ノズル部３００から発生する余剰の蒸着材料の捕集量を増大させることができる。 At this time, the plurality of heat sinks 520 are erected apart from each other in a substantially rectangular plate shape, and each heat sink 520 extends from the base surface 510 longer than the material injection nozzle unit 300, preferably the linear nozzle 310. Standing up. For this reason, the collection amount of the surplus vapor deposition material which generate | occur | produces from the material injection nozzle part 300 can be increased.
また、それぞれのヒートシンク５２０の上端の高さは、両外郭に配設されるヒートシンク５２０から前記コールドトラップ部５００の中心部に向かって漸減することが好ましい。このため、コールドトラップ部５００の上端面の形状を略「Ｕ」字状にし、コールドトラップ部５００の中心部分を材料噴射ノズル部３００の直下方に位置させることにより、コールドトラップ部５００の上端面が材料噴射ノズル部３００から放射状に吹き付けられる蒸着材料の噴射経路を囲繞することが好ましい。なお、多数のヒートシンク５２０を立設することにより、蒸着材料とヒートシンク５２０との接触面積を増大させて蒸着材料の捕集力を増大させることができる。 In addition, the height of the upper end of each heat sink 520 is preferably gradually reduced from the heat sink 520 disposed on both outer sides toward the center of the cold trap unit 500. For this reason, the shape of the upper end surface of the cold trap unit 500 is substantially “U” -shaped, and the central portion of the cold trap unit 500 is positioned directly below the material injection nozzle unit 300, thereby the upper end surface of the cold trap unit 500. It is preferable to surround the spray path of the vapor deposition material sprayed radially from the material spray nozzle unit 300. Note that by providing a large number of heat sinks 520, the contact area between the vapor deposition material and the heat sink 520 can be increased, thereby increasing the collection power of the vapor deposition material.
そして、前記ヒートシンク５２０に設けられる前記冷却流路５３０は、前記ヒートシンク５２０の外周面のうちコールドトラップ部５００の中心に向かう外面の表面に形成されて冷却流路５３０を蒸着材料の噴射経路と直接的に対面させることにより、蒸着材料の捕集力を増大させることができる。もちろん、前記ヒートシンク５２０及び冷却流路５３０の構成および形状は、開示された実施の形態に何ら限定されるものではなく、余剰の蒸着材料との接触面積を増大できる構成及び形状に種々に変更可能である。なお、前記冷却流路５３０は、ヒートシンク５２０の内部に設けられていてもよい。 The cooling channel 530 provided in the heat sink 520 is formed on the outer surface of the outer surface of the heat sink 520 toward the center of the cold trap unit 500, and the cooling channel 530 is directly connected to the vapor deposition material injection path. By making them face each other, the collection power of the vapor deposition material can be increased. Of course, the configurations and shapes of the heat sink 520 and the cooling flow path 530 are not limited to the disclosed embodiments, and can be variously changed to configurations and shapes that can increase the contact area with surplus vapor deposition material. It is. The cooling channel 530 may be provided inside the heat sink 520.
そして、前記コールドトラップ部５００をチャンバー部１００に手軽に取り付けたり取り外すために、前記第１及び第２の側部冷却プレート４３３ａ、４３３ｂと同様に、前記コールドトラップ部５００がチャンバー部１００の下面の上を滑走して移動してもよい。例えば、前記コールドトラップ部５００が配設される前記チャンバー部１００の下面の上には少なくとも１以上の滑走部４２７が形成され、前記コールドトラップ部５００のベース面５１０が前記滑走部４２７の上をそれぞれ滑走するように構成してもよい。この実施の形態においては、例えば、前記滑走部４２７としてレールを採用している。 In order to easily attach or remove the cold trap unit 500 to or from the chamber unit 100, the cold trap unit 500 is formed on the lower surface of the chamber unit 100 in the same manner as the first and second side cooling plates 433a and 433b. You may slide up and move. For example, at least one sliding part 427 is formed on the lower surface of the chamber part 100 in which the cold trap part 500 is disposed, and the base surface 510 of the cold trap part 500 extends over the sliding part 427. Each may be configured to slide. In this embodiment, for example, a rail is employed as the sliding portion 427.
以下、添付図面に基づき、このような構成を有する本発明の一実施の形態による基板処理装置の組立て及び基板処理方法を説明する。 A substrate processing apparatus assembly and a substrate processing method according to an embodiment of the present invention having such a configuration will be described below with reference to the accompanying drawings.
図９から図１４は、本発明の一実施の形態による基板処理装置の作動状態を概略的に示す作動状態図である。
まず、図２及び図４に示すように、上部カバー４１１及び下部カバー４２１をチャンバー部１００に形成されている上部貫通孔１３１及び下部貫通孔１３３に取り付けてチャンバー部１００の上面と下面を密閉し、第１及び第２の側部カバー４３１ａ、４３１ｂと支持カバー５４０をチャンバー部１００に形成されている第１乃至第３の側部貫通孔１３５ａ、１３５ｂ、１３７ａ、１３７ｂに取り付けてチャンバー部１００の側壁を密閉するとともに、チャンバー部１００の成膜区間１２３を冷却プレート部４００及びコールドトラップ部５００により囲繞する。このようにしてチャンバー部１００の内部空間を密閉してから、チャンバー部１００の内部を高真空の状態にする。
9 to 14 are operation state diagrams schematically showing an operation state of the substrate processing apparatus according to the embodiment of the present invention.
First, as shown in FIGS. 2 and 4, the upper cover 411 and the lower cover 421 are attached to the upper through hole 131 and the lower through hole 133 formed in the chamber part 100 to seal the upper and lower surfaces of the chamber part 100. The first and second side covers 431a and 431b and the support cover 540 are attached to first to third side through holes 135a, 135b, 137a and 137b formed in the chamber portion 100, and The side wall is sealed, and the film forming section 123 of the chamber unit 100 is surrounded by the cooling plate unit 400 and the cold trap unit 500. After the internal space of the chamber part 100 is sealed in this way, the inside of the chamber part 100 is brought into a high vacuum state.
このようにして蒸着工程の準備を完了した後、図９に示すように、チャンバー部１００の引込み区間１２１側に設けられる出入口１１０ａを介して基板Ｗを引き込ませる。このとき、前記基板Ｗは、チャンバー部１００に引き込ませる前に、別途の冷却装置において予め冷却して蒸着材料の蒸着効率を高めることができる。 After completing the preparation for the vapor deposition process in this way, as shown in FIG. 9, the substrate W is drawn through the inlet / outlet port 110 a provided on the drawing section 121 side of the chamber unit 100. At this time, before the substrate W is drawn into the chamber unit 100, the substrate W can be preliminarily cooled in a separate cooling device to increase the deposition efficiency of the deposition material.
出入口１１０ａを介してチャンバー部１００の引込み区間１２１に引き込まれた基板Ｗは、第１のローラー２１０の上に載置されて前記第１のローラー２１０の駆動により成膜区間１２３に向かって搬送される。このとき、基板Ｗは、別途のキャリアなしに第１のローラー２１０との接触によって搬送される。そして、第１のローラー２１０には冷却水が流れ込んで第１のローラー２１０が冷却された状態を維持するため、第１のローラー２１０への基板Ｗの接触だけでも基板Ｗを冷却することができる。このように基板Ｗを支持する別途のキャリアなしに基板Ｗを単独で搬送するため、キャリアを搬送するための別途の装置を設けることが不要になり、基板搬送部２００の構造を簡素化させることができ、基板搬送部２００を駆動する駆動手段は、低出力でも基板Ｗを搬送することができるというメリットがある。もちろん、本発明はこれに限定されるものではなく、基板Ｗの搬送は、基板単独で基板搬送部２００によって搬送されてもよいが、基板Ｗの状態に応じて、基板Ｗをキャリアに固定した状態で、キャリアを搬送してもよい。 The substrate W drawn into the drawing section 121 of the chamber unit 100 through the entrance / exit 110a is placed on the first roller 210 and conveyed toward the film forming section 123 by driving the first roller 210. The At this time, the substrate W is transported by contact with the first roller 210 without a separate carrier. Since the cooling water flows into the first roller 210 and maintains the state in which the first roller 210 is cooled, the substrate W can be cooled only by the contact of the substrate W with the first roller 210. . Thus, since the substrate W is transported independently without a separate carrier for supporting the substrate W, it is not necessary to provide a separate device for transporting the carrier, and the structure of the substrate transport unit 200 is simplified. The driving means for driving the substrate transport unit 200 has an advantage that the substrate W can be transported even at a low output. Of course, the present invention is not limited to this, and the substrate W may be transported by the substrate transport unit 200 alone, but the substrate W is fixed to the carrier according to the state of the substrate W. The carrier may be transported in the state.
引込み区間１２１から第１のローラー２１０によって成膜区間１２３へと搬送される基板Ｗは、第１の側部冷却プレート４３３ａの補助出入口４３５ａを通過して成膜区間１２３に引き込まれる。このとき、材料噴射ノズル部３２０（３１０ａ、３２０ａ）のいずれか一方を先に作動させてリニアノズル３１０ａから蒸着材料を吹き付ける。 The substrate W transported from the drawing section 121 to the film forming section 123 by the first roller 210 passes through the auxiliary inlet / outlet 435a of the first side cooling plate 433a and is drawn into the film forming section 123. At this time, any one of the material injection nozzles 320 (310a, 320a) is operated first to spray the vapor deposition material from the linear nozzle 310a.
そして、図１０に示すように、基板Ｗは成膜区間１２３に引き込まれて第２のローラー２２０ａによってリニアノズル３１０ａの下部を通過し、吹き付けられた蒸着材料は基板Ｗの上面に蒸着されて薄膜層を形成する。このとき、リニアノズル３１０ａから吹き付けられた蒸着材料のうち基板Ｗに蒸着できなかった余剰の蒸着材料はリニアノズル３１０ａの周りを囲繞しているレフレクター３２０ａに先に接触する。しかしながら、レフレクター３２０ａは蒸着材料が蒸着されないほどの温度、例えば、７０℃以上を維持しているため、蒸着材料が蒸着されることなく周りに分散される。そして、第２のローラー２２０ａには加熱水が流れ込んで余剰の蒸着材料が蒸着されることがない。これにより、余剰の蒸着材料はほとんどリニアノズル３１０ａの直下方に配設されて冷却された状態を維持しているコールドトラップ部５００によって捕集される。より具体的には、余剰の蒸着材料が分散されつつコールドトラップ部５００のヒートシンク５２０と接触されると、ヒートシンク５２０の外面または冷却流路５３０の外面に蒸着される。このとき、コールドトラップ部５００の内部に分散された余剰の蒸着材料は、コールドトラップ部５００に設けられるヒートシンク５２０の構成及び形状によってその進行経路が遮断されて、ヒートシンク５２０及び冷却流路５３０の外周面に蒸着されて捕集される。 As shown in FIG. 10, the substrate W is drawn into the film forming section 123 and passes through the lower portion of the linear nozzle 310a by the second roller 220a, and the sprayed deposition material is deposited on the upper surface of the substrate W to form a thin film. Form a layer. At this time, of the vapor deposition material sprayed from the linear nozzle 310a, the surplus vapor deposition material that could not be deposited on the substrate W first contacts the reflector 320a surrounding the linear nozzle 310a. However, since the reflector 320a maintains a temperature at which the deposition material is not deposited, for example, 70 ° C. or more, the deposition material is dispersed around without being deposited. Then, the heating water does not flow into the second roller 220a, and excess vapor deposition material is not deposited. As a result, most of the excess vapor deposition material is collected by the cold trap unit 500 that is disposed immediately below the linear nozzle 310a and maintains the cooled state. More specifically, when the excessive vapor deposition material is dispersed and brought into contact with the heat sink 520 of the cold trap unit 500, the vapor deposition is performed on the outer surface of the heat sink 520 or the outer surface of the cooling channel 530. At this time, the surplus vapor deposition material dispersed in the cold trap unit 500 is blocked in its traveling path by the configuration and shape of the heat sink 520 provided in the cold trap unit 500, and the outer periphery of the heat sink 520 and the cooling channel 530. It is deposited on the surface and collected.
リニアノズル３１０の下部を通過しつつ上面に蒸着材料が蒸着された基板Ｗは、図１１に示すように、第２のローラー２２０ｂによって搬送され続けて第２の側部冷却プレート４３３ｂに形成されている補助出入口４３５ｂを通過して引出し区間１２５に引き出され、第３のローラー２３０によって搬送され続けてチャンバー部１００の外部に引き出される。 The substrate W on which the deposition material is deposited on the upper surface while passing through the lower part of the linear nozzle 310 is continuously conveyed by the second roller 220b and formed on the second side cooling plate 433b as shown in FIG. It passes through the auxiliary inlet / outlet 435 b and is pulled out to the pull-out section 125, and is continuously conveyed by the third roller 230 and pulled out of the chamber unit 100.
以上、基板の蒸着工程及び基板処理装置の作動を詳述するために１枚の基板Ｗを例にとって説明したが、本発明はこれに限定されるものではなく、多数枚の基板Ｗが基板搬送部２００を介して連続してチャンバー部１００の引込み区間１２１に供給されて成膜区間１２３及び引出し区間１２５に搬送されてもよい。 In the above, a single substrate W has been described as an example in order to describe in detail the substrate deposition process and the operation of the substrate processing apparatus. It may be continuously supplied to the drawing section 121 of the chamber section 100 through the section 200 and transferred to the film forming section 123 and the drawing section 125.
このように蒸着工程が連続して行われている間に、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）に供給される蒸着材料が使い尽くされたところで、他の材料噴射ノズル部３００（３１０ｂ、３２０ｂ）を予熱して、同じチャンバー部１００内において連続して蒸着工程が行われるようにする。図１２に示すように、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）の蒸着材料が使い尽くされると、他の材料噴射ノズル部３００（３１０ｂ、３２０ｂ）を介して蒸着材料を吹き付ける。すると、基板Ｗは、図１３に示すように、先に作動された材料噴射ノズル部３００（３１０ａ、３２０ａ）をそのまま通過し、現在作動中の材料噴射ノズル部３００（３１０ａ、３２０ａ）の下部を通過しつつ蒸着工程が行われる。このときにも同様に、余剰の蒸着材料はコールドトラップ部５００に集中して捕集される。 When the vapor deposition material supplied to the previously operated material injection nozzle unit 300 (310a, 320a) is used up while the vapor deposition process is continuously performed in this manner, another material injection nozzle unit is used. 300 (310b, 320b) is preheated so that the vapor deposition process is continuously performed in the same chamber portion 100. As shown in FIG. 12, when the vapor deposition material of the previously operated material injection nozzle unit 300 (310a, 320a) is used up, the vapor deposition material is sprayed through the other material injection nozzle unit 300 (310b, 320b). . Then, as shown in FIG. 13, the substrate W passes through the material injection nozzle unit 300 (310a, 320a) that has been operated first, and passes through the lower part of the currently operating material injection nozzle unit 300 (310a, 320a). A vapor deposition process is performed while passing. At this time, too, excessive vapor deposition material is collected in a concentrated manner in the cold trap unit 500.
蒸着材料が蒸着し終わった基板Ｗは、図１４に示すように、引出し区間１２５に引き出された後にチャンバー部１００の外部に引き出される。 As shown in FIG. 14, the substrate W on which the vapor deposition material has been deposited is drawn out to the drawing section 125 and then drawn out of the chamber portion 100.
このように多数の材料噴射ノズル部３００を交互に作動させることにより、同じチャンバー部１００内において蒸着工程を連続して行うことができる。 As described above, by alternately operating the large number of material injection nozzle units 300, the vapor deposition process can be continuously performed in the same chamber unit 100.
そして、コールドトラップ部５００に捕集された余剰の蒸着材料が多量であるためコールドトラップ部５００の取り替えが余儀なくされる場合には、蒸着工程を止め、チャンバー部１００の内部を大気圧の状態に切り換える。次に、チャンバー部１００の側壁に取り付けられた支持カバー５４０を取り外してコールドトラップ部５００をチャンバー部１００から外した後、新たなコールドトラップ部をチャンバー部１００に取り付ける。このように、コールドトラップ部５００の取り替えは、基板処理装置を分解することなく、簡単な操作により行われるので、装置のメンテナンスによる装置の停止時間を短縮することができる。 When the excessive trap material deposited in the cold trap unit 500 is large and the cold trap unit 500 must be replaced, the deposition process is stopped and the inside of the chamber unit 100 is brought into an atmospheric pressure state. Switch. Next, after removing the support cover 540 attached to the side wall of the chamber part 100 and removing the cold trap part 500 from the chamber part 100, a new cold trap part is attached to the chamber part 100. As described above, the replacement of the cold trap unit 500 is performed by a simple operation without disassembling the substrate processing apparatus, so that the stop time of the apparatus due to the maintenance of the apparatus can be shortened.
以上、本発明を添付図面及び上述した好適な実施の形態に基づいて説明したが、本発明はこれに限定されるものではなく、特許請求の範囲によって限定される。よって、この技術分野における通常の知識を持った者であれば、特許請求の範囲における技術的思想から逸脱しない範囲内において本発明を種々に変形及び修正することができる。 As mentioned above, although this invention was demonstrated based on attached drawing and the suitable embodiment mentioned above, this invention is not limited to this, It is limited by a claim. Therefore, a person having ordinary knowledge in this technical field can variously modify and modify the present invention without departing from the technical idea of the claims.
Claims (15)
前記チャンバー部の成膜区間に位置して搬送される基板に蒸着材料を吹き付ける少なくとも１以上の材料噴射ノズル部と、
前記チャンバー部の成膜区間を囲繞するように位置して成膜区間の内部を冷却する冷却プレート部と、
前記材料噴射ノズル部の下方に位置して前記材料噴射ノズル部から吹き付けられる蒸着材料のうち基板に蒸着できなかった余剰の蒸着材料を捕集する少なくとも１以上のコールドトラップ部と、
を備える基板処理装置。 A chamber section having an internal space including a drawing section and a film forming section and a drawing section;
At least one or more material injection nozzles for spraying a deposition material onto a substrate transported in a film formation section of the chamber part;
A cooling plate part that is positioned so as to surround the film forming section of the chamber part and cools the inside of the film forming section;
At least one cold trap portion that collects excess vapor deposition material that could not be vapor-deposited on a substrate among vapor deposition materials that are located below the material jet nozzle portion and sprayed from the material jet nozzle portion;
A substrate processing apparatus comprising:
前記上部貫通孔及び下部貫通孔にそれぞれ着脱自在に配設された上部カバー及び下部カバーと、
をさらに備え、
前記冷却プレート部は、少なくとも前記上部カバー及び下部カバーにそれぞれ一体的に設けられる上部冷却プレート及び下部冷却プレートを備える請求項１に記載の基板処理装
置。 An upper through hole and a lower through hole formed in the upper and lower surfaces of the film forming section of the chamber part,
An upper cover and a lower cover, which are detachably disposed in the upper through hole and the lower through hole, respectively;
Further comprising
The substrate processing apparatus according to claim 1, wherein the cooling plate unit includes an upper cooling plate and a lower cooling plate that are integrally provided at least on the upper cover and the lower cover, respectively.
前記第１及び第２の側部貫通孔にそれぞれ着脱自在に配設された第１及び第２の側部カバーと、
をさらに備え、
前記第１及び第２の側部冷却プレートは、前記第１及び第２の側部カバーにそれぞれ一体的に設けられる請求項３に記載の基板処理装置。 First and second formed on one side wall of the chamber portion corresponding to a boundary portion between the drawing section and the film forming section of the chamber portion and a boundary portion between the film forming section and the drawing section. Side through holes,
First and second side covers detachably disposed in the first and second side through holes, respectively;
Further comprising
The substrate processing apparatus according to claim 3, wherein the first and second side cooling plates are integrally provided on the first and second side covers, respectively.
前記第１及び第２の側部冷却プレートは、前記滑走部の上をそれぞれ滑走して、前記チャンバー部の内部空間に引き込まれたり、前記チャンバー部の内部空間から引き出される請求項４に記載の基板処理装置。 Sliding parts are formed on the lower surface corresponding to the boundary part between the drawing section and the film forming section of the chamber part and the boundary part between the film forming section and the drawing section,
The said 1st and 2nd side part cooling plate slides on the said sliding part, respectively, and is withdrawn in the internal space of the said chamber part, or is withdraw | derived from the internal space of the said chamber part. Substrate processing equipment.
前記材料噴射ノズル部が配設される領域の下部エリアをカバーするように配設されるベース面と、
前記ベース面から立設される多数のヒートシンクと、
前記ヒートシンクに形成されて冷却水が流動する冷却流路と、
少なくとも前記ベース面の一方の側を支持する支持カバーと、
を備える請求項１に記載の基板処理装置。 The cold trap part is
A base surface disposed to cover a lower area of a region where the material injection nozzle portion is disposed;
A number of heat sinks erected from the base surface;
A cooling passage formed in the heat sink and through which cooling water flows;
A support cover for supporting at least one side of the base surface;
A substrate processing apparatus according to claim 1 .
前記支持カバーは前記第３の側部貫通孔に着脱自在に配設されて、前記支持カバーを着脱する際に前記コールドトラップ部も一体的に取り替える請求項６に記載の基板処理装置。 At least one or more third side through holes are formed in a lower region of the side wall of the chamber portion where the material injection nozzle portion is disposed,
The substrate processing apparatus according to claim 6 , wherein the support cover is detachably disposed in the third side through hole, and the cold trap part is also replaced integrally when the support cover is attached or detached.
それぞれのヒートシンクは、前記ベース面から前記材料噴射ノズル部の長さよりも長く延びて立設され、
それぞれのヒートシンクの上端の高さは、両外郭に配設されるヒートシンクから前記コールドトラップ部の中心部に向かって漸減する請求項６に記載の基板処理装置。 The plurality of heat sinks are set apart from each other;
Each heat sink extends from the base surface to extend longer than the length of the material injection nozzle part,
The substrate processing apparatus according to claim 6 , wherein the height of the upper end of each heat sink gradually decreases from the heat sink disposed on both outer sides toward the center of the cold trap portion.
前記コールドトラップ部のベース面は前記滑走部の上をそれぞれ滑走して、前記チャンバー部の内部空間に引き込まれたり、前記チャンバー部の内部空間から引き出される請求項６に記載の基板処理装置。 At least one sliding portion is formed on the lower surface of the chamber portion where the cold trap portion is disposed,
The substrate processing apparatus according to claim 6 , wherein the base surface of the cold trap part slides on the sliding part and is drawn into the internal space of the chamber part or pulled out from the internal space of the chamber part.
前記チャンバー部の引込み区間に設けられる多数の第１のローラーと、
前記チャンバー部の成膜区間に設けられる少なくとも２以上の第２のローラーと、
前記チャンバー部の引出し区間に設けられる少なくとも２以上の第３のローラーと、
を備え、
前記第１のローラーの内部には冷却媒体が供給されて冷却され、
前記第２のローラーの内部には冷却媒体及び加熱媒体が選択的に供給されて冷却または
加熱される請求項１２に記載の基板処理装置。 The substrate transport unit is
A number of first rollers provided in the retracting section of the chamber portion;
At least two or more second rollers provided in a film forming section of the chamber portion;
At least two or more third rollers provided in the drawer section of the chamber portion;
With
A cooling medium is supplied to the inside of the first roller to be cooled,
The substrate processing apparatus according to claim 12, wherein a cooling medium and a heating medium are selectively supplied into the second roller to be cooled or heated.
内部に蒸着材料が供給される供給流路が形成されて蒸着材料を吹き付けるリニアノズルと、
前記リニアノズルの側部及び上部を囲繞するレフレクターと、
を備える請求項１に記載の基板処理装置。 The material injection nozzle part is
A linear nozzle that forms a supply channel through which the vapor deposition material is supplied and blows the vapor deposition material;
A reflector surrounding the side and top of the linear nozzle;
A substrate processing apparatus according to claim 1 .
The substrate processing apparatus according to claim 14 , wherein the reflector is arranged such that a large number of plates are spaced apart from each other and overlapped.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0096288 | 2009-10-09 | ||
| KR1020090096288A KR101097738B1 (en) | 2009-10-09 | 2009-10-09 | Substrate processing apparatus and method |
| PCT/KR2010/006749 WO2011043566A2 (en) | 2009-10-09 | 2010-10-04 | Apparatus and method for processing substrate |
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| Publication Number | Publication Date |
|---|---|
| JP2013507521A JP2013507521A (en) | 2013-03-04 |
| JP5458185B2 true JP5458185B2 (en) | 2014-04-02 |
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| JP2012533072A Expired - Fee Related JP5458185B2 (en) | 2009-10-09 | 2010-10-04 | Substrate processing apparatus and method |
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| JP (1) | JP5458185B2 (en) |
| KR (1) | KR101097738B1 (en) |
| CN (1) | CN102668026B (en) |
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| JP5646405B2 (en) * | 2011-07-12 | 2014-12-24 | 住友重機械工業株式会社 | Deposition equipment |
| KR101876309B1 (en) * | 2012-07-27 | 2018-07-09 | 주식회사 원익아이피에스 | Deposition Chamber and In-line Processing System Having the Same |
| US9653709B2 (en) * | 2012-11-20 | 2017-05-16 | The Regents Of The University Of Michigan | Optoelectronic device formed with controlled vapor flow |
| KR102052074B1 (en) | 2013-04-04 | 2019-12-05 | 삼성디스플레이 주식회사 | Deposition apparatus, method for forming thin film using the same and method for manufacturing organic light emitting display apparatus |
| JP6607795B2 (en) * | 2016-01-25 | 2019-11-20 | 東京エレクトロン株式会社 | Substrate processing equipment |
| KR101710062B1 (en) * | 2016-07-26 | 2017-02-28 | 에스엔유 프리시젼 주식회사 | The deposition material collection device |
| JP6871068B2 (en) * | 2017-05-31 | 2021-05-12 | 株式会社アルバック | Sputtering equipment |
| CN108955080B (en) * | 2018-06-26 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | Cooling equipment |
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| KR100324499B1 (en) * | 2000-02-16 | 2002-02-16 | 김종일 | Thin film formation method by laser ablation or high voltage discharge plasma CVD or laser ablation combined with high voltage discharge plasma CVD |
| JP4522527B2 (en) * | 2000-03-06 | 2010-08-11 | キヤノンアネルバ株式会社 | Substrate mounting method in semiconductor manufacturing equipment |
| JP3971603B2 (en) * | 2001-12-04 | 2007-09-05 | キヤノンアネルバ株式会社 | Insulating film etching apparatus and insulating film etching method |
| JP4469364B2 (en) * | 2006-12-11 | 2010-05-26 | キヤノンアネルバ株式会社 | Insulating film etching equipment |
| JP5013591B2 (en) * | 2006-12-15 | 2012-08-29 | キヤノントッキ株式会社 | Vacuum deposition equipment |
| JP4597149B2 (en) * | 2007-01-26 | 2010-12-15 | 株式会社シンクロン | Thin film forming apparatus and thin film forming method |
| KR100977330B1 (en) * | 2007-03-29 | 2010-08-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Method for producing an anti-reflection or passivation layer for solar cells |
| JP5081516B2 (en) * | 2007-07-12 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | Vapor deposition method and vapor deposition apparatus |
| KR100966262B1 (en) * | 2008-03-27 | 2010-06-28 | 주식회사 피에스티 | 4 chamber plasma film forming apparatus enabling continuously deposition of front side and back side of wafer |
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| KR101097738B1 (en) | 2011-12-22 |
| JP2013507521A (en) | 2013-03-04 |
| WO2011043566A2 (en) | 2011-04-14 |
| TW201120983A (en) | 2011-06-16 |
| TWI441274B (en) | 2014-06-11 |
| CN102668026B (en) | 2015-05-27 |
| KR20110039027A (en) | 2011-04-15 |
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