TW201120983A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
TW201120983A
TW201120983A TW099134365A TW99134365A TW201120983A TW 201120983 A TW201120983 A TW 201120983A TW 099134365 A TW099134365 A TW 099134365A TW 99134365 A TW99134365 A TW 99134365A TW 201120983 A TW201120983 A TW 201120983A
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TW
Taiwan
Prior art keywords
unit
substrate
substrate processing
section
processing apparatus
Prior art date
Application number
TW099134365A
Other languages
Chinese (zh)
Other versions
TWI441274B (en
Inventor
Byeong-Min Bak
Doo-Won Gong
Sung-Kwan Son
Whang-Sin Cho
Sung-Jae Jung
Heui-Jae Pahk
Original Assignee
Snu Precision Co Ltd
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Application filed by Snu Precision Co Ltd filed Critical Snu Precision Co Ltd
Publication of TW201120983A publication Critical patent/TW201120983A/en
Application granted granted Critical
Publication of TWI441274B publication Critical patent/TWI441274B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

There is provided a substrate processing apparatus and method capable of preventing the substrate from being heated and efficiently collecting residual deposition material. The substrate processing apparatus includes a chamber unit including an inner space divided into an introduction section, a film formation section, and a discharge section, at least one material injection nozzle unit disposed in the film formation section of the chamber unit to inject a deposition material to a substrate being transferred, and a cooling plate unit disposed to surround the film formation section of the chamber unit and adapted to cool inside of the film formation section. In addition, the substrate processing apparatus further includes at least one cold trap unit disposed at a lower part of the material injection nozzle unit to collect residual deposition material not deposited on the substrate but left from the whole deposition material injected from the material injection nozzle unit.

Description

201120983 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板處理裝置以及一種基板處理方法，更具 體而言，係關於一種能夠防止基板受熱並有效地收集殘餘沈積材 料之基板處理裝置及基板處理方法。 【先前技術】 太陽能電池（solar cell )係例如藉由以下方式製成：形成硒（Se ) 或含Se化合物之一薄膜於一太陽能電池基板上，並將該Se薄膜 圖案化成具有一預定圖案。更具體而言’藉由例如化學氣相沈積 (chemical vapor depositi〇n; CVD )及物理氣相沈積（㈣^⑶丨哪沉 deposition; PVD)等氣相沈積製程（vap〇rdep〇siti〇npr〇cess)而 形成多數個薄膜層於一玻璃基板上。之後，將該等薄膜層圖案化 以製造太陽能電池。 用於太陽能電池之沈積材料係在由一汽化器（vap〇rizer )加熱 後以一汽化狀態供應至玻璃基板。由一加熱單元加熱該沈積材料 之一傳送線（transfer line)及一喷射單元（injection unit)，以傳 送汽化之沈積材料至玻璃基板。因此，受到加熱之傳送線及喷射 單元會升高腔室之内部溫度，導致置於腔室中之基板受熱。如此 一來，會降低沈積材料之沈積效率。 由於沈積效率降低，未沈積於玻璃基板上而殘餘之沈積材料可 能會沈積於腔室之内壁上或腔室中各種組件之外表面上，進而會 污染裝置並降低裝置之壽命。 【發明内容】 - 201120983 [技術問題] 、 本發明提供一種基板處理裝置以及一種基板處理方法，其能夠 藉由集中地冷卻用於執行氣相沈積之腔室中之薄卿成段而提升 沈積材料之沈積效率，藉此防止置於薄膜形成段中之基板受熱。 本發明亦提供-種基板處理裝置及一種基板處理方法，其能夠 藉由為薄細彡成段設置—絲沈積材料收集單元而防止殘餘沈積 材料造成污染，藉此延長裝置之壽命。 [技術解決方案] 根據-實例性實施例，一種基板處理裝置包括：—腔室單元， 包括Μ空間’該内部空間包括—引人段、—薄膜形成段及一 卸出段；至少-個材料喷嘴單元，設置於該腔室單元之該薄膜形 成段中’用以喷射—沈積材料至所傳送之-基板；以及-冷卻板 旱TO ( coolnig plate unit) ’設置成圍繞該腔室單元之該薄膜形成段 並適以冷卻該薄膜形成段之内部。 該基板處理裝置可更包括：—上貫穿孔與一下貫穿孔，分別形 成於該腔室單元之該薄卿成段之—上表面與-下表面；以及一 上封蓋與—T封蓋，分料移除地安裝至該上貫穿孔與該下貫穿 孔，其中該冷卻板單元包括至少—上冷卻板及—下冷卻板，該上 冷卻板與該Τ冷卻板分別與該上封蓋與該下封蓋-體成型。 / 亥冷卻板單元可包括—第-側面冷卻板及-第二側面冷卻板， 該第-側面冷卻板與二側面冷卻板分別設置於該腔室單元之 該引入段與該薄膜形成段之間以及該薄膜形成段與該卸出段之 201120983 間。 該基板處理裝置可更包括：一第一側面貫穿孔與一第二側面貫 穿孔，位於該腔室單元之一側壁上，並位於對應多個邊界的多個 位置處’該等邊界介於該引人段與該薄卿成段之間以及介於該 薄膜形成段與該卸出段之間；以及—第-側面封蓋與—第二側面 封蓋’分別可移除地安裝至該第—側面貫穿孔與該第二側面貫穿 孔’其中該第-側面冷卻板與該第二側面冷卻板分別與該第—側 面封蓋與該第二側面封蓋一體成型。 X月工至單元可更包括一滑執，該滑軌形成於該腔室單元之一下 相表面’並位於對應該等邊界的多個位置處，該等邊界介於於 該引入段與該_形成段之間以及介於該薄膜形成段與該卸出段 之間’且該第—側面冷卻板與該第二側面冷卻板藉由在該等滑軌 上滑動而進出於該腔室單元之該内部空間。 /玄基板處理裝置可更包括至少—個冷料元（_trapunit)’ 该至f—個冷牌單元設置於該材料噴嘴單元下方，用以收集未沈 積於該基板上而殘餘的該沈積材料。 根據另貝例性實施例，一種基板處理裝置包括：一腔室單元， &内H㈣部空間包括—引人段、-薄膜形成段及- 至乂⑯材料f嘴單元’設置於該腔室單元之該薄膜形 :用以噴射—沈積材料至所傳送之一基板；以及至少一個 2早元’設置於該材料噴嘴單元下方，用以收集未沈積於該基 板上而殘餘的該沈積材料。 201120983 該冷牌單元可包括：一基準面（baseplane)，設置成涵蓋—區域 之一下部面積，該區域中設置有該材料噴嘴單元；多數個散熱片 (heat sink) 直地文裝至s玄基準面；—冷卻路徑，形成於該等 散熱片處，俾使一冷卻水於該冷卻路徑中流動；以及一支撐封蓋， 適以支撐該基準面之至少一個側面。 個第 該腔室單元可包括至少一個第三側面貫穿孔，該至少一 侧面貫穿孔形成於該腔室單^之-側壁上，並位於設置有該材料 喷嘴單元的該區域之-下部部分；且該支樓封蓋係可移除地安裝 至該第三側面貫穿孔’俾使該冷料元與該支#封蓋成—體地: 開及安裝。 刀 該等散熱片可相間隔地垂直安裝，各該散熱片自該基準面延伸 至長於該材料喷嘴單元之—長度，以及該等散熱片之多個上端具 有自該冷料元之二外部朝該冷料元之—巾部逐漸減小之高 —該冷卻職可形成於該等散熱片之外表面上以㈣該冷啡單 元之一中部。 j腔室單元可包括至少—個滑軌，該至少—個滑執形成於該腔 至早7C之一下部内表面上，且位於設置有該冷阱單元之一位置 處，且該冷牌單元之該基準面可藉由在該滑執上滑動而進出於該 腔至單元之該内部空間。 X 土板處理裝置可更包括—冷卻板單元，該冷卻板單元設置成 圍繞該腔室單元之該薄膜形成段，並適以冷卻該薄卿成段之内 201120983 - 部。 該基板處理裝置可更包括一基板傳送單元，該基板傳送單元設 置於該腔室單元之該内部空間中，並適以將該基板依序地傳送至 該引入段、該薄膜形成段及該卸出段。 該基板傳送單元可包括：多數個第一滾輪，設置於該腔室單元 之"亥引入#又中，至少二第二滾輪，設置於該腔室單元之該薄膜形 成段中’以及至少—第二滾輪，設置於該腔室單元之該卸出段中， 其中該等第一滾輪可被供以一冷卻媒體並相應地被冷卻，且該等 第二滾輪可被選擇性地供以另—冷卻媒體或―加熱媒體，並相應 地被冷卻或加熱。 u 該材料喷嘴單元可包括：—直線式喷嘴（丨嶋r_le)，包括形 成於其中的一饋送路徑，用於饋送該沈積材料以喷射該沈積材 料；以及一反射器（reflector)，圍繞該直線式喷嘴之—側部及一 上部。 該反射器可包括多數個板構件，該等板構件係相間隔地交疊。 根據又-實例性實施例，一種基板處理方法包括：冷卻一薄膜 形成段，以執行蒸氣沈積，該薄膜形成段形成於一腔室單元之一 1中，引入一基板至该薄膜形成段；藉由噴射一沈積材料 至该基板，形成—薄膜層；將未沈積於該基板上而殘餘的該沈積 材料收集至-冷„元；自該薄卿成段卸出該基板；以及更換 該冷阱單元。 該基板處理方法可更包括：於引人該基板至該薄膜形成段之 201120983 負1j ’冷卻該基板。- 可藉由交替地操作設置於該薄膜形成段 ，連續地噴射該沈積材料。 在形成該薄膜層期間， 中之至少二材料喷嘴單元 [有利效果] 根據實例性實施例，可致使基板受熱之周圍因素被盡可能地消 除’且基板直接«接地受到冷卻。因此，可提升沈積_沈積材 料至一基板之效率。 此外’因提供-專用單元以收集在沈積材料之氣相沈積後所產 生之殘餘沈積材料，故可防止基板處理裝置之内部受到殘餘沈積 材料之污染。因此，可延長裝置之壽命。 一冷卻單元於該裝置中圍繞一薄膜形成段設置以冷卻一反應空 門Λ、卻單元以及一殘餘沈積材料收集單元被配置成可輕易地 與該裝置連接及分離。因此，可選擇性地更換受到頻繁污染之部 件，進而有利於裝置之修復及維護。 此外，提供至少二沈積材料供應單元至腔室中之薄膜形成段， 以依序供應沈積材料及被供以沈積材料。因此，可連續地執行沈 積製程。 【實施方式】 以下，將參照附圖詳細闡述本發明之具體實施例。然而，本發 明亦可實施為不同之形式，而不應被視為僅限於本文所述之實施 例°相反’ k供該等實施例係為了使本揭露内容透徹且完整並 向熟習此項技術者全面傳達本發明之範圍。在以下說明中，所有 201120983 附圖中相同之參考編號皆指代相同之元件。— 第1圖係為顯示根據-實例性實施例之一基板處理裝置之縱剖 面示意圖。第2圖係為示意性顯示該基板處理裝置之主要部件之 連接及分離操作之縱剖面示意圖。帛3圖係為示意性顯示該基板 處理裝置之剖面示意圖。帛4圖係為示意性顯示該基板處理裝置 之主要部件之連接及分離操作之剖面示意圖。第5圖及第6圖顯 示該基板處理裝置之一材料喷嘴部件之視圖。第7圖及第8圖顯 示該基板處理裝置之一冷陕部件之視圖。 如圖所示，根據一實施例之基板處理裝置包含：一腔室單元 100，包含一内部空間，該内部空間被劃分成—引入段121、一薄 膜形成段123及一卸出段125 ; —基板傳送單元200，設置於腔室 單元100中，用以將基板依序傳送至引入段丨21、薄膜形成段 及卸出段125 ;至少一個材料喷嘴單元300，設置於腔室單元1〇〇 之薄膜形成段123中，用以噴射一沈積材料至所傳送之基板；以 及至少一個冷阱單元500,設置於材料喷嘴單元3〇〇之一下部用 以收集由材料喷嘴單元300所喷射之全部沈積材料中未沈積於基 板上而遺留之殘餘沈積材料。 腔至單元100包含閘道（gateway) ll〇a及ii〇b，分別設置於腔 室單το 1〇〇之一端與另一端，以用於引入及卸出基板。另外，可 置狹縫閥（slot valve ) 111 a及111 b或間閥（gate valve )以封閉 間道11〇3及U〇b。腔室單元100可透過狹縫閥Ilia及111b而與 供基板在其中等待被引人或卸出之空間（例如承載室（load lock Chamber))相連。用於引入基板之閘道U〇a及ll〇b可與例如一預 10 201120983 處理腔室（preprocessing chamber)相連，例如與用於冷卻基板之 冷卻腔室相連。 腔室單元100之内部空間被劃分成：引入段121，用以引入及傳 送基板；薄膜形成段123,用以對基板執行氣相沈積；以及卸出段 125，用以傳送已完成氣相沈積之基板以卸出基板。較佳地引入 段12卜薄膜形成段123及卸出段125係根據基板之傳送及氣相沈 積製程而丨在功能上分開，但並不在實體上分隔開。然而’因本發 明並不僅限於此，故段121、123及125亦可藉由安裝於段121、 123及125之間邊界處之分隔板（partitj〇n)而在實體上分開。此 外，該等段亦可由多數個腔室實施，該等腔室用作引入段121、薄 膜形成段123及卸出段丨25並彼此流體連通。 如圖所示，腔室單元1〇〇之一上表面及一下表面分別包含一上 貝牙孔及一下貫穿孔133。一冷卻板單元400之一上封蓋411及一 下封蓋421以插入方式安裝至上貫穿孔13 1及下貫穿孔1，以分 別封閉上貫穿孔131及下貫穿孔133。此外，一第一側面貫穿孔 135a及一第二側面貫穿孔135b形成於腔室單元1〇〇之一側壁上且 對應於多數個邊界之位置處，該等邊界介於引入段121與薄膜形 成段123之間以及介於薄膜形成段123與卸出段125之間。冷卻 板單元400之一第一側面封蓋431a及一第二側面封蓋43比以插 入方式安裝至第一側面貫穿孔135a及第二側面貫穿孔i35b，以分 別封閉第一側面貫穿孔135a及第二側面貫穿孔135b。一或多個第 三側面貫穿孔137a及l37b形成於腔室單元1〇〇之該一側壁上且 位於設置有材料沈積喷嘴單元3〇〇的區域之一下部部分處。此外’ 201120983 '冷阱單元500之支撐封蓋540 (將於下文予以說明）以插入方式安 裝至第三側面貫穿孔137a及137b，以封閉第三側面貫穿孔137a 及 137b。 根據上述結構，因閘道11〇3及u〇b被狹縫閥111&及mb封閉 且上貫穿孔131、下貫穿孔133以及第一貫穿孔至第三貫穿孔 135a、135b、137a及137b被冷卻板單元4〇〇及冷阱單元500封閉， 故腔室單元100之内部空間得到密封。因此，冷卻板單元4〇〇及 冷阱單元500係以一密封方式可移除地安裝於腔室單元1〇〇中。 基板傳送單元200包含：多數個第一滾輪（r〇ner) 21〇，設置於 引入段121中；至少二第二滾輪22(^及22〇b，設置於薄膜形成段 中，以及至乂 一第二滾輪230，設置於腔室單元1〇〇之卸出段 125中。第-滾輪至第三滾輪21()、22()及23()藉由—單獨之驅動 益（圓未示出）進行滾動，以傳送放置於其上面之基板。 一冷卻媒體（例如冷卻水）被供應至第一滾輪21〇之内部並於 第-滾輪210之内部被冷卻。—冷卻媒體及—加熱媒體（例如冷 卻水及加熱水）被選擇性地供應至第二滾輪22〇之内部並於第二 滾輪220之内部被冷卻或加熱。 尤其是，適以將在引入段121中引入之基板傳送至薄膜形成段 ⑵^第一滾輪21〇冷卻在引入段121中所引入之基板。為此，相 較於第二滾輪220,第一滾輪21〇排列得相對緊漆，以增大基板與 第一滾輪2丨0間之接觸面積，進而使第—滚輪21()有效地冷卻基 12 201120983 第二滾輪220及第三-滾輪23〇分別設置於薄膜形成段i23及卸 出段！25中’用以將由引人段121所傳送之基板引導至薄膜形成 段i23及卸出段125巾。考慮到基板之長度，較佳提供最少數目 之第二滾輪220及第三滾輪23〇。舉例而言，第二滾輪22〇及第三 滾輪230可在薄膜形成段123及卸出段125中逐一地設置於一前 端及-後端。在本實施例中，於薄膜形成段123中設置四第二滾 輪220a及220b，並於卸出段125中設置二第三滾輪23〇。 尤其是’第二滾輪220a及220b能夠選擇性地執行冷卻及加熱。 因此，藉由在一氣相沈積製程中加熱第二滾輪22如及UOb，可防 止由材料喷嘴單元所噴射之全部沈積材料中未沈積於基板上 而遺留之殘餘沈積材料附著於第二滾輪22〇a及22〇b之表面並污 染第二滾輪220a及220b。同時，為提高沈積材料之沈積速率，可 冷卻第二滾輪220a及220b，以冷卻與第二滾輪22如及22〇b相接 觸地傳送之基板。 一或多個材料噴嘴單元3〇〇設置於腔室單元1〇〇之薄膜形成段 123中，用於噴射一沈積材料至基板。較佳地設置至少二材料噴 嘴單元300,以達成連續之氣相沈積。本實施例採用二材料喷嘴單 元300。因此，在其中之一材料喷嘴單元3〇〇 (31如及如）在 乳相沈積製程中喷射沈積材料至基板之同時，另一材料喷嘴單元 3〇〇 (310b及320b)被預熱，以於先前運作之材料喷嘴單元3〇〇 (310a及320a)之沈積材料饋送器（圖未示出）之沈積材料用盡 而需要重新充填沈積材料時進行運作。在此種狀態下，當先前運 作之材料喷嘴單元300 ( 310a及32〇a)停止運作時，另一材料喷 13 201120983 嘴單元则⑶〇b及遍）將同時運作以噴射沈、積材料至基板， 藉此連續崎行氣減積。在此_，對與先前運作之材料喷嘴 單元300 (3U)a及遍）減之沈_㈣送器重新充填沈積材 料。藉此，藉由交替使用該二材料噴嘴單元3〇〇而達成對基板之 連續氣相沈積。 各該材料噴嘴單元300包含：-直線式噴嘴训，包括形成於其 中的-用於饋送該沈積材料之饋送路徑311以及—用於線性地喷 射該沈積㈣之噴射孔（jet edifice) 313 ;以及—反射器32〇，圍 繞直線式喷嘴310之-側部及-上部。此處，直線式喷嘴31〇連 接至-沈積材料饋送裝置（圖未示出），該沈積材料饋送裝置單獨 設置於腔室單元1〇〇之外側。 較佳地，直線式喷嘴310略短於基板之一寬度，以便不會無謂 地喷射沈積材料於基板之寬度以外，藉此減少沈積材料之消耗。 此外口基板於覓度方向上之一側端並非必需的或者將於基板之 一後處理（postprocessing)中被移除，故直線式喷嘴31〇可形成 為短於基板之寬度，以便不會在該二側端形成未被沈積有該沈積 材料之區域。 另外，較佳使直線式喷嘴310之喷射孔313靠近所傳送之基板 δ又置。舉例而言，喷射孔3 13與基板間之距離可設定為約2〇毫米 或以下，亦即盡可能短，俾使自喷射孔313喷射之沈積材料以最 小之彳貝耗直接沈積於基板上。 一汽化沈積材料穿過直線式喷嘴31〇移動或喷射，直線式喷嘴 31〇維持於約20(TC至約300t：之受熱狀態。為此，圍繞直線式喷 14 201120983 嘴310設置反射器320,以防止自直線式喷嘴31〇發出之熱量加熱 腔室單元100之内部以及基板。反射器320可藉由使多數個板却 間隔地交疊而形成’以最大化隔熱效率。該等板之數目可根據直 線式喷嘴310之溫度以及反射器320之隔熱效率而選擇性地加以 確定。舉例而言，較佳使該等板其中之一最外側的板之溫度可低 於直線式噴嘴310之溫度並高於一可達成有效沈積之溫度（即約 70°C ) 〇 冷卻板單元400適以藉由環繞腔室單元1 〇〇之薄膜形成段^ 23 而冷卻薄膜形成段123之内部。冷卻板單元400包括：一上冷卻 板413及一下冷卻板423’分別設置於薄膜形成段123之一上部及 一下部；一第一側面冷卻板433a及一第二側面冷卻板433b，分別 設置於引入段121與薄膜形成段123之間以及薄膜形成段123與 卸出段125之間；以及側壁冷卻板440a及440b，分別設置於薄膜 形成段123之一前側壁與一後側壁。 上泠卻板413與下冷卻板423藉由固定托架（bracket) 415及 425而成一體地固定至上封蓋411及下封蓋421，上封蓋411及下 封蓋421安裝於上貫穿孔131及下貫穿孔133。藉此，上冷卻板 411與下冷卻板412可與上封蓋411及下封蓋421成一體地一起方 便地與腔室單元1 00分離及連接。儘管在本實施例中係設置單個 上貫穿孔131及單個下貫穿孔133且相應地設置單個上封蓋411 及下封蓋421，然本發明並不僅限於此。根據該裝置之配置，可設 置多數個上貫穿孔131及多數個下貫穿孔133,且亦可對應於該等 貫穿孔131及133而設置多數個上封蓋411及多數個下封蓋42卜 15 201120983 另外’由於上冷卻板413安裝至上封蓋411，可廣泛地形成一單個 冷卻板。此外，由於下冷卻板423安裝至下封蓋421，亦可在所需 位置分別形成多數個冷卻板。在本實施例中，下冷卻板423被劃 为成夕個部件且设置成不交疊冷啡單元5〇〇。上封蓋411可直接用 作冷卻板，而不單獨提供上封蓋411及上冷卻板413。同樣地，下 封蓋421可直接用作冷卻板，而不單獨提供下封蓋421及下冷卻 板 423。 第一側面冷卻板433a及第二側面冷卻板433b可成一體地固定 至安裝於腔室單元1〇〇之第一側面貫穿孔丨35a及第二側面貫穿孔 135b之第一側面封蓋431a及第二側面封蓋431b。因此，可藉由 第一側面封蓋431a及第二側面封蓋431b相對於腔室單元1〇〇之 分開及連接操作而方便地分開及連接第一冷卻板433a及第二冷卻 板433b。尤其是，為更方便地更換及連接第一側面冷卻板Μ% 及第二側面冷卻板433b，在腔室單元100之一下部内表面上且對 應於多數個邊界之位置形成一滑轨14〇，該些邊界係介於引入段 12丨與薄膜形成段丨23之間以及介於薄膜形成段123與卸出段125 之間。亦即，第一冷卻板433a及第二冷卻板433b在滑執14〇上 滑動以被引入腔室單元1〇〇之内部空間以及自該内部空間卸出。 舉例而言，滑執140可呈在本實施例中所述之軌道形式。然而， 第側面冷卻板433a及第二側面冷卻板433b之更換不僅可以滑 動方式執行，且亦可以其他各種方法執行。另外，第一側面冷卻 板433a及第二側面冷卻板433b可分別包含子閘道（) 435a及435b，以供基板通過。 16 201120983 側壁冷卻板440a及440b可安裝至薄膜形成段123之前側壁及 後側壁之一内表面或者嵌於該前側壁及該後側壁中。側壁冷卻板 440a及440b可構造成各種方式，只要不干擾安裝於前側壁及後側 壁處之其他部件（例如，材料喷嘴單元300，第二傳送滾輪220 及冷阱單元500)即可。 冷阱單元500用於冷卻及收集由材料喷嘴單元300所喷射之全 部沈積材料中未沈積於基板上而遺留之殘餘沈積材料。冷啡單元 500之數目可設置成對應於材料噴嘴單元300之數目。 冷阱單元500包括：一基準面510,設置成涵蓋一區域之一下部 面積，該區域中設置有材料喷嘴單元300 ;多數個散熱片520，垂 直地安裝至基準面510; —冷卻路徑530，形成於散熱片520處， 一冷卻水於冷卻路徑530中流動；以及支撐封蓋540,適以支撐基 準面5 10之至少一個側面。 以與第一側面冷卻板433a及第二側面冷卻板433b相同之方 式，冷阱單元500穿過腔室100之一側壁安裝。為此，·使一或多 個第三側面貫穿孔137a及137b形成於腔室單元100之一側壁上 並位於設置有材料喷嘴單元300的該區域之下部部分處。支撐封 蓋540係可移除地連接至第三側面貫穿孔137a及137b，俾藉由支 撐封蓋540之分開及連接而方便地分開及連接冷阱單元500。 此處，該等散熱片520分別具有一實質矩形板之形狀，並相間 隔地垂直安裝。各該散熱片520安裝至基準面510，且延伸之長度 長於材料喷嘴單元300，更佳地延伸過直線式喷嘴310之長度。藉 此，'可增大由材料喷嘴單元300所產生之殘餘沈積材料之一收集 17 201120983 量。 ' 另外，較佳地使散熱片520具有自冷阱單元500之二外部朝冷 阱單元500之一中部逐漸減小之高度。亦即，冷阱單元500之一 上端形成一「U」形。冷阱單元500之中部設置於材料喷嘴單元 300之正下方，俾使冷阱單元500之上端環繞自材料噴嘴單元300 沿徑向喷出之沈積材料之一喷射路徑。此外，該等散熱片520係 垂直地安裝，沈積材料與散熱片520間之接觸面積增大，進而相 應地提升沈積材料收集效率。 '冷卻路徑530形成於散熱片520之外表面上，且更具體而言， 形成於指向冷阱單元500之中部的外表面上。因此，冷卻路徑530 直接面對沈積材料喷射路徑，藉此提升沈積材料收集效率。散熱 片520及冷卻路徑530之配置及形狀並不限於所述實施例，而是 亦可有所變化。亦即，冷卻路徑530可形成於散熱片520内部。 藉由與第一側面冷卻板433a及第二側面冷卻板433b相同之方 式，冷阱單元500可以一滑動方式沿腔室單元100之下部内表面 移動，以便於使冷阱單元500相對於腔室單元100連接及分開。 舉例而言，腔室單元100之下部内表面可於對應於冷阱單元500 之一位置包含至少一個滑軌427，俾使冷阱單元500之基準面510 沿滑軌427滑動。在本實施例中，滑軌427係呈轨道之形式。 以下，將參照附圖來闡述根據本發明實施例之基板處理裝置組 裝方法及基板處理方法。 第9圖至第14圖係為示意性顯示基板處理裝置之運作狀態之運 18 201120983 作狀態視圖。如第2圖及第4圖所示，上封蓋411及下封蓋42I 安裝至形成於腔室單元1〇〇上之上貫穿孔〗31及下貫穿孔133，藉 此密封腔室單元丨00之上表面及下表面。第一側面封蓋431&及第 二側面封蓋431b以及支撐封蓋540安裝至第一側面貫穿孔至第三 側面貝牙孔135a、135b、137a及137b，藉此密封腔室單元1〇〇之 側壁。同時，冷卻板單元400及冷阱單元5〇〇環繞腔室單元1〇〇 之薄膜形成段123。因此，腔室單元100之内部空間由此得到密封 並隨後被抽空至一高真空度狀態。 當沈積製程由此準備就緒時，經由設置於腔室單元1〇〇之引入 #又121處之閘道110a引入基板w，如第9圖所示。此處，基板w 在破引入至腔室單元100之前，可藉由一單獨之冷卻裝置而預先 冷卻，以提升沈積材料之沈積效率。 引入於引入段121中之基板W被安放於第一滾輪21〇之上部並 精由第一滾輪210傳送至薄膜形成段123。此處，基板w可在無 專用載具之情況下藉由接觸第—滾輪21G而進行傳送。因藉由: 第-滾輪210中流動之冷卻水而使第一滾輪21〇維持於一被冷卻 狀態，基板w可僅藉由接觸第一滾輪21〇而得到冷卻。如上所述， 基板w之傳送係在無專用載具支撐基板w之情況下執行，此可藉 由名卻用於驅動載具之專用裝置而簡化基板傳送單元之結 構。此外，用於驅動基板傳送單元之驅動器可以一低之輸出° 來傳送基板W。儘管基板w可僅藉由基板傳送單元2〇〇進行傳 运’然本發明並非僅限於此。根據基板W之狀態而定，基板w可 在被固定至一載具之狀態下傳送。 19 201120983 ♦ 、在由第一滾輪210自引入段121傳送至薄膜形成段123之後， 基板w被傳送經過第一側面冷卻板433a之子閘道435&並引入至 薄膜形成段123。此時，材料喷嘴單元32〇 (31〇a及32〇a)其中 之任一者首先運作，以透過直線式喷嘴310a喷射沈積材料。 接著，如第ίο圖所示，基板w藉由第二滾輪22〇a被引入至薄 膜形成段123並經過直線式喷嘴31〇a之一下部部分。喷射至基板 W之上表面之沈積材料被氣相沈積成一薄膜層。由直線式噴嘴 3!〇a噴敎全部沈㈣射未沈毅基^上而遺留之殘餘沈積 材料首先接觸反射器32〇a。然而，因反射器伽維持於一不會造 成沈積材料發生氣相沈積之溫度（例如為約耽或以上），故沈積 材料不會發生沈積而是向周圍擴散。此外，由於加熱水流動於第 滾輪220a中，故殘餘沈積材料亦不會發生沈積。因此，殘餘沈 積材料被直線式喷们⑽正下方的維持於被冷卻狀態之料單元 ^收集。更具體而言，在擴散之同時，_沈積材料—俟接觸冷 拼早兀500之散熱片52〇,便會沈積於散熱片52〇之外表面或冷卻 路徑530之外表面上。此處，擴散至冷料元5⑼内之殘餘沈積 材料會因料單元谓之散熱片52G之配置及形狀而受到阻播並 沈積於散熱片520及冷卻路徑53〇之外表面上，進而得到收华。 參見第11圖，在經過直線式喷嘴31G之下部部分時在外表面上 破沈積有沈積材料之後，基板W由第二滾輪島繼續傳送在 經過形成於第二側面冷卻板433b處之子閘道伽之後，卸出至 卸出段125。接著，基板W被進—步傳送並卸出至腔室單 之外部。 20 201120983 儘管上文係以-單片基板-W來闡釋沈積製程及基板處理操作， 然而本發明並不僅限於此。多數個基板料經由基板傳送單元細 而接連饋送至腔室單元⑽之引人段121，並傳送至薄膜形成段 123及卸出段125。 在使用材料喷嘴單元_⑶Ga及3施）連續地執行氣相沈積 之同時’對另一材料喷嘴單元3〇〇(遍及32〇b)進行預熱以 便能夠在先前運作之材料喷嘴單元綱（31Qa及32Qa)之沈積材 料用盡時在同-腔室單元100中繼續進行氣相沈積。如第a圖所 示，當先前運作之材料喷嘴單元3〇〇(31〇U32〇a)中之沈積材 料用盡時，便由另-材料喷嘴單元（鳩及3則喷射沈積材料。 j此種狀態下’如第13圖所示，基板w只是經過前—材料喷嘴 皁凡300 ( 310a及320a)，並在基板w經過目前正在運作之材料 噴嘴單元则（遍及320b)之下部部分時執行氣相沈積。在此 期間’殘餘沈積材料亦被集中地收集至冷料元5〇〇。 在完成沈積材料之沈積後，基板w被卸出至卸出段並接著被卸 出至腔室單元100之外部，如第14圖所示。 如上所述’可藉由交替地運作多數個材料喷嘴單元綱而於— 個腔室單元100中連續執行沈積製程。 當冷牌單元500在收集大量殘餘沈積材料之後需要更換時，便 暫止沈積製程並將腔室100之内部空間變換至一大氣壓力狀態。 接著，使安裝至腔室100之側壁上的支料蓋54G分離，藉此使 冷拼單元500自腔室單元100分離。接著，安裝一新的冷啡單元 於腔至單元100中。亦即’無需拆卸基板處理裝置便可以一簡單 21 201120983 之方式達成冷啤單元500之更換。藉此’可縮短用於修復或維護 該裝置之停機時間。 儘管上文係參照具體實施例闡述一種基板處理裝置及基板處理 方法，然本發明並不僅限於此。因此，熟習此項技術者應易於理 解’可在不脫離由隨附申請專利範圍所界定之本發明精神及範圍 之條件下對其作出各種修飾及更動。 【圖式簡單說明】 結合附圖閱讀上文說明，可更詳細地理解本發明之實例性實施 例’附圖中： 第1圖係為顯示根據一實例性實施例之一基板處理裝置之縱剖 面示意圖； 第2圖係為示意性顯示該基板處理裝置之主要部件之連接及分 離操作之縱剖面示意圖； 第3圖係為示意性顯示誃基板處理裝置之剖面示意圖； 第4圖係為示意性顯示該基板處理裝置之主要部件之連接及分 離操作之剖面示意圖； 第5圖及第6圖顯示該基板處理裝置之一材料喷嘴單元之視圖； 第7圖及第8圖顯示該基板處理裝置之―冷拼單元之視圖； 第9圖至第14圖係為示意性顯示該基板處理裝置之運作狀態之 運作狀態視圖。 22 201120983 【主要元件符號說明】 100 :腔室單元 110a :閘道 110b :閘道 111 a :狹縫閥 111b ··狹縫閥 121 :引入段 123 :薄膜形成段 125 :卸出段 131 :上貫穿孔 133 :下貫穿孔 135a :第一側面貫穿孔 135b :第二側面貫穿孔 137a :第三側面貫穿孔 137b :第三側面貫穿孔 140 :滑軌 200 :基板傳送單元 210 :第一滚輪 220 :第二滾輪 220a :第二滾輪 220b :第二滾輪 230 :第三滾輪 300 :材料喷嘴單元 310 :直線式喷嘴 310a :直線式喷嘴 310b :材料喷嘴單元 311 :饋送路徑 313 :喷射孔 320 :反射器/直線式喷嘴 320a :材料喷嘴單元/反射器 320b :材料喷嘴單元 400 :冷卻板單元 411 :上封蓋 413 :上冷卻板 415 :固定托架 421 :下封蓋 423 :下冷卻板 23 201120983 425 ： 431a 433a 435a 440a 500 ： 520 : 540 ： 固定托架 427 :滑軌 :第一側面封蓋 431b :第二側面封蓋 :第一側面冷卻板 433b :第二側面冷卻板 :子閘道 435b :子閘道 :側壁冷卻板 440b :側壁冷卻板 冷阱單元 510 :基準面 散熱片 530 ·•冷卻路徑 支撐封蓋 W :基板 24201120983 VI. Description of the invention:  [Technical Field] The present invention relates to a substrate processing apparatus and a substrate processing method, More physically, A substrate processing apparatus and a substrate processing method for preventing a substrate from being heated and collecting a residual deposition material efficiently.  [Prior Art] A solar cell is produced, for example, by: Forming a film of selenium (Se) or a compound containing Se on a solar cell substrate, The Se film is patterned to have a predetermined pattern. More specifically, by chemical vapor deposition (chemical vapor deposition);  CVD) and physical vapor deposition ((4)^(3) 沉 deposition;  PVD) and other vapor deposition processes (vap〇rdep〇siti〇npr〇cess) form a plurality of thin film layers on a glass substrate. after that, The film layers are patterned to produce a solar cell.  The deposition material for the solar cell is supplied to the glass substrate in a vaporized state after being heated by a vaporizer. Heating a transfer line and an injection unit by a heating unit, The vaporized deposition material is transferred to the glass substrate. therefore, The heated transfer line and the spray unit raise the internal temperature of the chamber. The substrate placed in the chamber is heated. So, Will reduce the deposition efficiency of the deposited material.  Due to the reduced deposition efficiency, The deposited material that is not deposited on the glass substrate may be deposited on the inner wall of the chamber or on the outer surface of various components in the chamber. This can contaminate the unit and reduce the life of the unit.  [Summary of the Invention] - 201120983 [Technical Issues],  The invention provides a substrate processing device and a substrate processing method, It is capable of enhancing the deposition efficiency of the deposited material by centrally cooling the thin sections in the chamber for performing vapor deposition, Thereby, the substrate placed in the film forming section is prevented from being heated.  The invention also provides a substrate processing device and a substrate processing method, It is possible to prevent contamination of residual deposition materials by providing a thin wire-forming section-wire deposition material collecting unit. This extends the life of the device.  [Technical Solution] According to an exemplary embodiment, A substrate processing apparatus includes: - chamber unit,  Including the space, the internal space includes - the introduction section, - a film forming section and a discharge section; At least one material nozzle unit, Provided in the film forming section of the chamber unit to spray-deposit material to the transferred substrate; And a cooling plate (coolnig plate unit) is disposed to surround the film forming section of the chamber unit and to cool the inside of the film forming section.  The substrate processing apparatus may further include: - upper through hole and lower through hole, Formed on the upper surface and the lower surface of the thin section of the chamber unit; And an upper cover and a -T cover, The material is removably mounted to the upper through hole and the lower through hole, Wherein the cooling plate unit comprises at least an upper cooling plate and a lower cooling plate. The upper cooling plate and the crucible cooling plate are integrally formed with the upper cover and the lower cover.  / The cooling plate unit may include a first side cooling plate and a second side cooling plate.  The first side cooling plate and the two side cooling plates are respectively disposed between the lead-in section of the chamber unit and the film forming section and between the film forming section and the unloading section 201120983.  The substrate processing apparatus may further include: a first side through hole and a second side are perforated, Located on one of the side walls of the chamber unit, And at a plurality of locations corresponding to the plurality of boundaries, wherein the boundaries are between the inductive segment and the thin segment and between the film forming segment and the unloading segment; And the first side cover and the second side cover are removably mounted to the first side through hole and the second side through hole respectively, wherein the first side cooling plate and the second side cooling plate The first side cover and the second side cover are integrally formed with the first side cover.  X month work to unit can include a slippery, The slide rail is formed on a lower surface of the chamber unit and is located at a plurality of positions corresponding to the equal boundary. The boundary is between the introduction section and the formation section and between the film formation section and the discharge section and the first side cooling plate and the second side cooling plate are at the same The slide rail slides into the interior space of the chamber unit.  The /substrate processing device may further comprise at least one cold element (_trapunit)' to the f-cold card unit disposed under the material nozzle unit, It is used to collect the deposited material that remains without being deposited on the substrate.  According to another exemplary embodiment, A substrate processing apparatus includes: a chamber unit,  & The inner H (four) space includes - the introduction section, a film forming section and - to a 16 material f nozzle unit 'the film shape of the chamber unit: Used to spray-deposit material to one of the substrates transferred; And at least one 2 early yuan is disposed below the nozzle unit of the material, It is used to collect the deposited material that remains without being deposited on the substrate.  201120983 The cold card unit can include: a base plane, Set to cover the area under one of the areas, a nozzle unit of the material is disposed in the area; Most of the heat sinks are mounted directly to the s-base plane; - cooling path, Formed at the heat sinks, Causing a cooling water to flow in the cooling path; And a support cover,  Suitable to support at least one side of the reference surface.  The first chamber unit may include at least one third side through hole, The at least one side through hole is formed on the side wall of the chamber, And located in the lower portion of the region in which the nozzle unit of the material is disposed; And the branch cover is removably mounted to the third side through hole 俾 such that the cold element is integrally formed with the branch:  Open and install.  The heat sinks can be mounted vertically at intervals. Each of the fins extends from the reference surface to a length longer than the nozzle unit of the material. And the plurality of upper ends of the heat sinks have a height gradually decreasing from the outer portion of the cold material element toward the towel portion of the cold material element - the cooling position may be formed on the outer surface of the heat sink to (4) the One of the cold morphine units.  The j chamber unit may include at least one slide rail, The at least one slipper is formed on the lower inner surface of the cavity up to 7C, And located at a position where the cold trap unit is disposed, And the reference surface of the cold card unit can enter the cavity to the internal space of the unit by sliding on the sliding handle.  The X earth plate processing device may further include a cooling plate unit. The cooling plate unit is disposed to form a section around the film of the chamber unit, And suitable for cooling the thin section of the section of the 201120983 - Department.  The substrate processing apparatus may further include a substrate transfer unit, The substrate transfer unit is disposed in the inner space of the chamber unit, And sequentially transmitting the substrate to the lead-in section, The film forms a section and the discharge section.  The substrate transfer unit may include: Most of the first scrollers, Set in the chamber unit" Hai introduced #又中, At least two second rollers, Provided in the film forming section of the chamber unit and at least the second roller, Provided in the discharge section of the chamber unit,  Wherein the first rollers can be supplied with a cooling medium and cooled accordingly, And the second roller can be selectively provided with another cooling medium or a heating medium. It is cooled or heated accordingly.  u The material nozzle unit can include: - linear nozzle (丨嶋r_le), Including a feeding path formed therein, For feeding the deposition material to spray the deposition material; And a reflector, Around the side of the linear nozzle and an upper portion.  The reflector can include a plurality of plate members, The plate members overlap at intervals.  According to yet another example embodiment, A substrate processing method includes: Cooling a film to form a segment, To perform vapor deposition, The film forming section is formed in one of the chamber units 1 Introducing a substrate to the film forming section; By spraying a deposition material onto the substrate, Forming a film layer; Collecting the deposited material that is not deposited on the substrate to be cooled to - cold; Unloading the substrate from the thin section; And replacing the cold trap unit.  The substrate processing method can further include: The substrate is introduced to the film forming section of 201120983 minus 1j' to cool the substrate. - can be disposed in the film forming section by alternately operating, The deposited material is continuously sprayed.  During the formation of the film layer,  At least two material nozzle units in the middle [Advantageous Effects] According to an exemplary embodiment, The surrounding factors that cause the substrate to be heated are eliminated as much as possible' and the substrate is directly «grounded and cooled. therefore, It can increase the efficiency of deposition_deposited material to a substrate.  In addition, 'providing-dedicated units to collect residual deposited materials produced after vapor deposition of deposited materials, Therefore, the inside of the substrate processing apparatus can be prevented from being contaminated by the residual deposition material. therefore, It can extend the life of the device.  A cooling unit is disposed in the apparatus around a film forming section to cool a reaction empty gate, The unit and a residual deposition material collection unit are configured to be easily coupled and detached from the device. therefore, Optionally replace parts that are frequently contaminated, This further facilitates the repair and maintenance of the device.  In addition, Providing at least two deposition material supply units to the film forming section in the chamber,  The deposition material is supplied in sequence and is supplied with a deposition material. therefore, The deposition process can be performed continuously.  [Embodiment] Hereinafter, Specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. however, The invention may also be implemented in different forms, Rather, the invention is not to be construed as limited to the scope of the invention. In the following description, All reference numerals in the figures of 201120983 refer to the same elements. - Figure 1 is a longitudinal cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment. Fig. 2 is a schematic longitudinal sectional view schematically showing the connection and separation operation of the main components of the substrate processing apparatus. The Fig. 3 is a schematic cross-sectional view showing the substrate processing apparatus. The Fig. 4 is a schematic cross-sectional view schematically showing the connection and separation operations of the main components of the substrate processing apparatus. Fig. 5 and Fig. 6 show views of a material nozzle member of one of the substrate processing apparatuses. Fig. 7 and Fig. 8 show views of a cold-sand component of the substrate processing apparatus.  as the picture shows, A substrate processing apparatus according to an embodiment includes: a chamber unit 100, Contains an interior space, The internal space is divided into - introduction section 121, a thin film forming section 123 and a discharge section 125;  a substrate transfer unit 200, Provided in the chamber unit 100, Used to sequentially transfer the substrate to the lead-in section 21, Film forming section and discharge section 125; At least one material nozzle unit 300, Provided in the film forming section 123 of the chamber unit 1〇〇, Used to spray a deposition material to the substrate to be transferred; And at least one cold trap unit 500, A lower portion of the material nozzle unit 3 is disposed to collect residual deposition material remaining in the entire deposition material sprayed by the material nozzle unit 300 without being deposited on the substrate.  The cavity to unit 100 includes gateways ll〇a and ii〇b, They are respectively disposed at one end and the other end of the chamber το 1〇〇, For introducing and unloading substrates. In addition, A slot valve 111a and 111b or a gate valve may be provided to close the lanes 11〇3 and U〇b. The chamber unit 100 can be connected to the space in which the substrate is waiting to be introduced or unloaded (e.g., a load lock chamber) through the slit valves Ilia and 111b. The gates U〇a and 11b for introducing the substrate may be connected to, for example, a preprocessing chamber of a 201120983. For example, it is connected to a cooling chamber for cooling the substrate.  The internal space of the chamber unit 100 is divided into: Introducing segment 121, Used to introduce and transfer substrates; The film forming section 123, Used to perform vapor deposition on the substrate; And unloading section 125, The substrate for transferring the vapor deposited has been discharged to discharge the substrate. Preferably, the film forming section 123 and the discharging section 125 are functionally separated according to the substrate transfer and vapor deposition process. But not physically separated. However, because the present invention is not limited to this, Section 121, 123 and 125 can also be installed in section 121,  The partition plates (partitj〇n) at the boundary between 123 and 125 are physically separated. In addition, These segments can also be implemented by a number of chambers. The chambers serve as lead-in sections 121, The film forming section 123 and the discharge section 25 are in fluid communication with each other.  as the picture shows, One of the upper surface and the lower surface of the chamber unit 1 includes an upper upper hole and a lower through hole 133, respectively. An upper cover 411 and a lower cover 421 of one of the cooling plate units 400 are inserted into the upper through hole 13 1 and the lower through hole 1 in an inserting manner. The upper through hole 131 and the lower through hole 133 are closed, respectively. In addition, A first side through hole 135a and a second side through hole 135b are formed on one of the side walls of the chamber unit 1 and corresponding to a plurality of boundaries. The boundaries are between the lead-in section 121 and the film forming section 123 and between the film forming section 123 and the unloading section 125. One of the first side cover 431a and the second side cover 43 of the cooling plate unit 400 are mounted to the first side through hole 135a and the second side through hole i35b in an inserting manner, The first side through hole 135a and the second side through hole 135b are closed, respectively. One or more third side through holes 137a and 137b are formed on the one side wall of the chamber unit 1 and at a lower portion of a region where the material deposition nozzle unit 3 is provided. Further, the '201120983' support cover 540 of the cold trap unit 500 (which will be described later) is inserted into the third side through holes 137a and 137b by insertion, The third side through holes 137a and 137b are closed.  According to the above structure, Because the gates 11〇3 and u〇b are slit valves 111& And mb is closed and the upper through hole 131, a lower through hole 133 and first through third through holes 135a, 135b, 137a and 137b are closed by the cooling plate unit 4〇〇 and the cold trap unit 500,  Therefore, the internal space of the chamber unit 100 is sealed. therefore, The cooling plate unit 4A and the cold trap unit 500 are removably mounted in the chamber unit 1A in a sealed manner.  The substrate transfer unit 200 includes: Most of the first scrolls (r〇ner) 21〇, Set in the lead-in section 121; At least two second rollers 22 (^ and 22〇b, Set in the film forming section, And to a second wheel 230, It is disposed in the discharge section 125 of the chamber unit 1〇〇. First to third roller 21 (), 22() and 23() are scrolled by a separate drive (circle not shown), To transfer the substrate placed on it.  A cooling medium (e.g., cooling water) is supplied to the inside of the first roller 21 and is cooled inside the first roller 210. - The cooling medium and the heating medium (e.g., cooling water and heated water) are selectively supplied to the inside of the second roller 22 and cooled or heated inside the second roller 220.  especially, It is suitable to transfer the substrate introduced in the introduction section 121 to the film forming section (2), the first roller 21, and the substrate introduced in the introduction section 121. to this end, Compared to the second roller 220, The first roller 21 is arranged in a relatively tight lacquer, In order to increase the contact area between the substrate and the first roller 2丨0, Further, the first roller 21 () effectively cools the base 12 201120983. The second roller 220 and the third roller 23 are respectively disposed in the film forming section i23 and the discharge section! 25' is used to guide the substrate conveyed by the introducing section 121 to the film forming section i23 and the discharging section 125. Considering the length of the substrate, Preferably, a minimum number of second rollers 220 and third rollers 23 are provided. For example, The second roller 22 and the third roller 230 may be disposed one by one at the front end and the rear end in the film forming section 123 and the discharging section 125. In this embodiment, Four second rollers 220a and 220b are disposed in the film forming section 123, And a second third roller 23 is disposed in the unloading section 125.  In particular, the second rollers 220a and 220b are capable of selectively performing cooling and heating.  therefore, By heating the second roller 22 such as UOb in a vapor deposition process, It is possible to prevent the residual deposition material remaining in the entire deposition material ejected by the material nozzle unit from being deposited on the substrate and adhering to the surfaces of the second rollers 22a and 22b and contaminating the second rollers 220a and 220b. Simultaneously, In order to increase the deposition rate of the deposited material, Cooling the second rollers 220a and 220b, The substrate is transferred in contact with the second roller 22 such as 22 〇b.  One or more material nozzle units 3 are disposed in the film forming section 123 of the chamber unit 1 For spraying a deposition material to the substrate. Preferably at least two material nozzle units 300 are provided, To achieve continuous vapor deposition. This embodiment employs a two-material nozzle unit 300. therefore, While one of the material nozzle units 3 (31), for example, sprays the deposition material onto the substrate in the emulsion phase deposition process, Another material nozzle unit 3〇〇 (310b and 320b) is preheated, The operation is performed when the deposition material of the deposition material feeder (not shown) of the previously operated material nozzle unit 3 (310a and 320a) is used up and the deposition material needs to be refilled. In this state, When the previously operated material nozzle unit 300 (310a and 32〇a) ceases to function, Another material spray 13 201120983 mouth unit (3) 〇b and pass) will operate simultaneously to spray sink, Material to the substrate,  In this way, continuous gas reduction is achieved. here_, The deposited material is refilled with the sinker _(four) feeder of the previously operated material nozzle unit 300 (3U) a and pass. With this, Continuous vapor deposition of the substrate is achieved by alternately using the two material nozzle unit 3〇〇.  Each of the material nozzle units 300 includes: - Linear nozzle training, A feed path 311 formed therein for feeding the deposition material and a jet edifice 313 for linearly ejecting the deposition (4) are included; And - the reflector 32〇, The side and the upper portion of the linear nozzle 310 are wound. Here, The linear nozzle 31 is connected to a deposition material feeding device (not shown), The deposition material feeding device is separately provided on the outer side of the chamber unit 1〇〇.  Preferably, The linear nozzle 310 is slightly shorter than one of the widths of the substrate, So as not to unnecessarily spray the deposited material beyond the width of the substrate, Thereby reducing the consumption of deposited materials.  In addition, one side of the mouth substrate in the twist direction is not necessary or will be removed in a post processing of the substrate. Therefore, the linear nozzle 31 can be formed to be shorter than the width of the substrate. Therefore, a region where the deposition material is not deposited is not formed at the two side ends.  In addition, Preferably, the ejection orifice 313 of the linear nozzle 310 is placed close to the substrate δ to be transferred. For example, The distance between the injection holes 3 13 and the substrate can be set to about 2 mm or less. That is, as short as possible, The deposited material ejected from the ejection holes 313 is directly deposited on the substrate with the minimum mussel consumption.  The vaporized deposition material moves or ejects through the linear nozzle 31, The linear nozzle 31〇 is maintained at approximately 20 (TC to approximately 300t: The state of being heated. to this end, Around the linear spray 14 201120983 mouth 310 is provided with a reflector 320, The inside of the chamber unit 100 and the substrate are heated to prevent heat generated from the linear nozzle 31. The reflector 320 can be formed by overlapping a plurality of plates to maximize insulation efficiency. The number of such plates can be selectively determined based on the temperature of the linear nozzle 310 and the thermal insulation efficiency of the reflector 320. For example, Preferably, the temperature of one of the outermost plates of the plates may be lower than the temperature of the linear nozzles 310 and higher than a temperature at which effective deposition can be achieved (ie, about 70 ° C). The cooling plate unit 400 is adapted to The film surrounding the chamber unit 1 is formed into a section 23 to cool the inside of the film forming section 123. The cooling plate unit 400 includes: An upper cooling plate 413 and a lower cooling plate 423' are respectively disposed at an upper portion and a lower portion of the film forming section 123; a first side cooling plate 433a and a second side cooling plate 433b, Separately disposed between the introduction section 121 and the film forming section 123 and between the film forming section 123 and the discharging section 125; And sidewall cooling plates 440a and 440b, They are respectively disposed on one of the front side walls and one rear side wall of the film forming section 123.  The upper plate 413 and the lower cooling plate 423 are integrally fixed to the upper cover 411 and the lower cover 421 by fixing brackets 415 and 425. The upper cover 411 and the lower cover 421 are attached to the upper through hole 131 and the lower through hole 133. With this, The upper cooling plate 411 and the lower cooling plate 412 can be separated from and connected to the chamber unit 100 in an integrated manner with the upper cover 411 and the lower cover 421. Although a single upper through hole 131 and a single lower through hole 133 are provided in the present embodiment and a single upper cover 411 and lower cover 421 are provided correspondingly, However, the invention is not limited thereto. According to the configuration of the device, A plurality of upper through holes 131 and a plurality of lower through holes 133 may be provided. Further, a plurality of upper covers 411 and a plurality of lower covers 42 may be provided corresponding to the through holes 131 and 133. 15 201120983 Further, since the upper cooling plate 413 is attached to the upper cover 411, A single cooling plate can be widely formed. In addition, Since the lower cooling plate 423 is attached to the lower cover 421, A plurality of cooling plates can also be formed at the desired positions. In this embodiment, The lower cooling plate 423 is divided into a unit and is disposed so as not to overlap the chilling unit 5〇〇. The upper cover 411 can be directly used as a cooling plate. The upper cover 411 and the upper cooling plate 413 are not separately provided. Similarly, The lower cover 421 can be directly used as a cooling plate. The lower cover 421 and the lower cooling plate 423 are not separately provided.  The first side cooling plate 433a and the second side cooling plate 433b may be integrally fixed to the first side cover 431a of the first side through hole 35a and the second side through hole 135b of the chamber unit 1A and The second side cover 431b. therefore, The first cooling plate 433a and the second cooling plate 433b can be conveniently separated and connected by the separation and connection operation of the first side cover 431a and the second side cover 431b with respect to the chamber unit 1b. especially, In order to more easily replace and connect the first side cooling plate Μ% and the second side cooling plate 433b, A slide rail 14 is formed on a lower inner surface of one of the chamber units 100 and corresponding to a plurality of boundaries. The boundary is between the lead-in section 12丨 and the film forming section 以及23 and between the film forming section 123 and the unloading section 125. that is, The first cooling plate 433a and the second cooling plate 433b slide on the slide 14b to be introduced into and discharged from the internal space of the chamber unit 1''.  For example, The slipper 140 can be in the form of a track as described in this embodiment. however,  The replacement of the first side cooling plate 433a and the second side cooling plate 433b can be performed not only in a sliding manner, It can also be performed in various other ways. In addition, The first side cooling plate 433a and the second side cooling plate 433b may include sub-gates 435a and 435b, respectively. For the substrate to pass.  16 201120983 The side wall cooling plates 440a and 440b may be mounted to or embedded in one of the front side walls and the rear side walls of the front side wall and the rear side wall of the film forming section 123. The side wall cooling plates 440a and 440b can be constructed in various ways. As long as it does not interfere with other components installed at the front and rear side walls (for example, Material nozzle unit 300, The second transfer roller 220 and the cold trap unit 500) may be used.  The cold trap unit 500 is for cooling and collecting residual deposition material remaining in the entire deposited material sprayed by the material nozzle unit 300 without being deposited on the substrate. The number of chiller units 500 can be set to correspond to the number of material nozzle units 300.  The cold trap unit 500 includes: a reference plane 510, Set to cover the lower area of one of the areas, a material nozzle unit 300 is disposed in the area; Most of the heat sink 520, Mounted vertically to the reference surface 510;  a cooling path 530, Formed on the heat sink 520,  a cooling water flows in the cooling path 530; And a support cover 540, Suitable for supporting at least one side of the reference surface 5 10 .  In the same manner as the first side cooling plate 433a and the second side cooling plate 433b, The cold trap unit 500 is mounted through one of the side walls of the chamber 100. to this end, One or more third side through holes 137a and 137b are formed on one side wall of the chamber unit 100 and located at a lower portion of the area where the material nozzle unit 300 is disposed. The support cover 540 is removably coupled to the third side through holes 137a and 137b, The cold trap unit 500 is conveniently separated and connected by the separation and connection of the support cover 540.  Here, The heat sinks 520 each have a shape of a substantially rectangular plate. They are installed vertically and separated from each other. Each of the heat sinks 520 is mounted to the reference surface 510. And extending longer than the material nozzle unit 300, More preferably, the length of the linear nozzle 310 extends. By this, 'Can increase the amount of one of the residual deposited materials produced by the material nozzle unit 300 17 201120983.  ' In addition, The heat sink 520 is preferably provided to have a height gradually decreasing from the outer portion of the cold trap unit 500 toward the central portion of the cold well unit 500. that is, One of the upper ends of the cold trap unit 500 is formed in a "U" shape. The middle portion of the cold trap unit 500 is disposed directly under the material nozzle unit 300, The upper end of the cold trap unit 500 surrounds one of the deposition paths of the deposition material radially ejected from the material nozzle unit 300. In addition, The heat sinks 520 are mounted vertically. The contact area between the deposition material and the heat sink 520 is increased, In turn, the deposition material collection efficiency is correspondingly increased.  'The cooling path 530 is formed on the outer surface of the heat sink 520, And more specifically,  It is formed on the outer surface that is directed to the middle of the cold trap unit 500. therefore, The cooling path 530 directly faces the deposition path of the deposited material, Thereby improving the collection efficiency of the deposited material. The arrangement and shape of the heat sink 520 and the cooling path 530 are not limited to the embodiment. It can also change. that is, A cooling path 530 may be formed inside the heat sink 520.  By the same method as the first side cooling plate 433a and the second side cooling plate 433b, The cold trap unit 500 can move along the inner surface of the lower portion of the chamber unit 100 in a sliding manner. In order to connect and separate the cold trap unit 500 with respect to the chamber unit 100.  For example, The inner surface of the lower portion of the chamber unit 100 may include at least one slide rail 427 at a position corresponding to one of the cold trap units 500, The reference plane 510 of the cold trap unit 500 is slid along the slide rail 427. In this embodiment, The slide rails 427 are in the form of rails.  the following, A substrate processing apparatus assembling method and a substrate processing method according to an embodiment of the present invention will be described with reference to the accompanying drawings.  Fig. 9 through Fig. 14 are diagrams showing the state of operation of the substrate processing apparatus 18 201120983. As shown in Figures 2 and 4, The upper cover 411 and the lower cover 42I are mounted to the through hole 311 and the lower through hole 133 formed in the chamber unit 1 Thereby, the upper surface and the lower surface of the chamber unit 丨00 are sealed. First side cover 431 & And the second side cover 431b and the support cover 540 are mounted to the first side through hole to the third side shell hole 135a, 135b, 137a and 137b, Thereby, the side wall of the chamber unit 1 is sealed. Simultaneously, The cooling plate unit 400 and the cold trap unit 5 are surrounded by the film forming section 123 of the chamber unit 1A. therefore, The internal space of the chamber unit 100 is thereby sealed and then evacuated to a high vacuum state.  When the deposition process is ready, Introducing the substrate w via the gate 110a provided at the introduction of the chamber unit 1#, 121 As shown in Figure 9. Here, The substrate w is before being introduced into the chamber unit 100, Pre-cooled by a separate cooling device, To improve the deposition efficiency of the deposited material.  The substrate W introduced into the lead-in section 121 is placed on the upper portion of the first roller 21 and is transferred by the first roller 210 to the film forming section 123. Here, The substrate w can be transferred by contacting the first roller 21G without a dedicated carrier. Because of:  The cooling water flowing in the first roller 210 maintains the first roller 21 于 in a cooled state. The substrate w can be cooled only by contacting the first roller 21〇. As mentioned above,  The transfer of the substrate w is performed without the dedicated carrier support substrate w, This simplifies the structure of the substrate transfer unit by means of a dedicated device for driving the carrier. In addition, The driver for driving the substrate transfer unit can transport the substrate W with a low output °. Although the substrate w can be transported only by the substrate transfer unit 2, the present invention is not limited thereto. Depending on the state of the substrate W, The substrate w can be transferred while being fixed to a carrier.  19 201120983 ♦ , After being transferred from the introduction section 121 to the film forming section 123 by the first roller 210,  Substrate w is transferred through sub-gate 435 & of first side cooling plate 433a And introduced into the film forming section 123. at this time, The material nozzle unit 32 (31〇a and 32〇a) operates first, The deposited material is sprayed through the linear nozzle 310a.  then, As shown in Figure ίο, The substrate w is introduced into the film forming section 123 by the second roller 22〇a and passes through a lower portion of the linear nozzle 31〇a. The deposition material sprayed onto the upper surface of the substrate W is vapor-deposited into a thin film layer. By linear nozzle 3! 〇a sneeze all the sinking (4) and leave the residual deposition material left over the reflector 32〇a. however, Since the gamma of the reflector is maintained at a temperature that does not cause vapor deposition of the deposited material (for example, about 耽 or more), Therefore, the deposited material does not deposit but spreads to the surroundings. In addition, Since the heated water flows in the first roller 220a, Therefore, the deposited material does not deposit. therefore, The residual deposition material is collected by the material unit ^ which is maintained in the cooled state directly below the linear spray (10). More specifically, While spreading, _Deposition material - 俟 contact cold spelling 500 heat sink 52 〇, It is deposited on the outer surface of the fin 52 or on the outer surface of the cooling path 530. Here, The residual deposition material diffused into the cold material element 5 (9) is blocked by the arrangement and shape of the heat sink 52G of the material unit and deposited on the outer surface of the heat sink 520 and the cooling path 53〇. In turn, it was received.  See Figure 11, After depositing the deposition material on the outer surface when passing through the lower portion of the linear nozzle 31G, The substrate W is continuously transported by the second roller island after passing through the sub-gate gamma formed at the second side cooling plate 433b. Discharge to the discharge section 125. then, The substrate W is transferred and discharged to the outside of the chamber.  20 201120983 Although the above is a single-substrate-W to explain the deposition process and substrate processing operations,  However, the invention is not limited to this. A plurality of substrate materials are finely and sequentially fed to the attraction section 121 of the chamber unit (10) via the substrate transfer unit. And transferred to the film forming section 123 and the discharging section 125.  While continuously performing vapor deposition using the material nozzle unit _(3)Ga and 3), the other material nozzle unit 3 (over 32 〇b) is preheated to enable the previously operated material nozzle unit (31Qa) When the deposition material of 32Qa) is used up, vapor deposition is continued in the same-chamber unit 100. As shown in Figure a, When the deposited material in the previously operated material nozzle unit 3〇〇(31〇U32〇a) is used up, The material is sprayed from the other-material nozzle unit (鸠 and 3).  j in this state, as shown in Figure 13, The substrate w is only passed through the front-material nozzles (300a and 320a). Vapor deposition is performed while the substrate w passes through the underlying portion of the currently operating material nozzle unit (over 320b). During this period, the residual deposited material was also collected intensively to the cold element.  After the deposition of the deposited material is completed, The substrate w is discharged to the discharge section and then discharged to the outside of the chamber unit 100. As shown in Figure 14.  The deposition process can be continuously performed in the chamber unit 100 by alternately operating a plurality of material nozzle units as described above.  When the cold card unit 500 needs to be replaced after collecting a large amount of residual deposition material, The deposition process is temporarily suspended and the internal space of the chamber 100 is changed to an atmospheric pressure state.  then, Separating the support cover 54G mounted to the side wall of the chamber 100, Thereby, the cold spelling unit 500 is separated from the chamber unit 100. then, A new chiller unit is installed in the chamber 100. That is, the replacement of the cold beer unit 500 can be achieved in a simple manner by 201120983 without disassembling the substrate processing apparatus. By this, the downtime for repairing or maintaining the device can be shortened.  Although a substrate processing apparatus and a substrate processing method are described above with reference to specific embodiments, However, the invention is not limited thereto. therefore, It will be readily understood by those skilled in the art that various modifications and changes may be made without departing from the spirit and scope of the invention as defined by the appended claims.  [Simple description of the drawing] Read the above description with reference to the attached drawings. An exemplary embodiment of the invention can be understood in more detail in the drawings:  1 is a longitudinal cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment;  Figure 2 is a schematic longitudinal cross-sectional view schematically showing the connection and separation operation of the main components of the substrate processing apparatus;  Figure 3 is a schematic cross-sectional view showing the substrate processing apparatus;  Figure 4 is a schematic cross-sectional view schematically showing the connection and separation operation of the main components of the substrate processing apparatus;  5 and 6 are views showing a material nozzle unit of one of the substrate processing apparatuses;  7 and 8 are views showing a "cold unit" of the substrate processing apparatus;  Fig. 9 through Fig. 14 are views showing an operational state schematically showing the operational state of the substrate processing apparatus.  22 201120983 [Description of main component symbols] 100 : Chamber unit 110a: Gateway 110b: Gateway 111 a : Slit valve 111b ··Slit valve 121 : Introducing paragraph 123: Film forming section 125 : Unloading section 131: Upper through hole 133 : Lower through hole 135a : The first side through hole 135b: The second side through hole 137a: The third side through hole 137b: The third side through hole 140: Slide rail 200: Substrate transfer unit 210: First roller 220: The second roller 220a: Second roller 220b: Second roller 230: Third wheel 300: Material nozzle unit 310: Linear nozzle 310a: Linear nozzle 310b: Material nozzle unit 311 : Feed path 313: Spray hole 320: Reflector / Linear Nozzle 320a : Material Nozzle Unit / Reflector 320b : Material nozzle unit 400: Cooling plate unit 411: Upper cover 413: Upper cooling plate 415 : Fixing bracket 421 : Lower cover 423 : Lower cooling plate 23 201120983 425 :  431a 433a 435a 440a 500 :  520:  540:  Fixing bracket 427 : Slide rail: First side cover 431b: Second side cover: First side cooling plate 433b: Second side cooling plate: Sub gateway 435b: Sub gateway: Side wall cooling plate 440b : Sidewall cooling plate Cold trap unit 510: Datum Plane Heat Sink 530 ·•Cooling Path Support Cover W : Substrate 24

Claims (1)

201120983 七、申請專利範圍： 、 1· 一種基板處理裝置，包括： 腔至早元’包括一内邱允pq .. — 鬥邛工間，忒内部空間包括一引入 #又、一薄膜形成段及一卸出段； 至少-個材料喷嘴單S，設置於該腔室單元之該薄膜形 成財，，用以喷。射-沈積材料至所傳送之一基板；以及 ^、冷部板早7L ’设置成圍繞該腔室單元之該薄膜形成 段，並適以冷卻該薄膜形成段之内部。 2·如請求項1所述之基板處理裝置，更包括： …一上貫穿孔與—下貫穿孔，分別形成於該腔室單元之該 薄膜形成段之一上表面與—下表面；以及 —上封蓋與—下封蓋’分別可移除地安裝至該上貫穿孔 與該下貫穿孔， ▲其中該冷卻板單元包括至少—上冷卻板及—下冷卻板， a上冷部板與訂冷卻板分別與該上封蓋與訂封蓋 型。 3·如請求項1所述之基板處理裝置，其中該冷卻板單元包括一 第i面冷卻板及—第二側面冷卻板，該第—側面冷卻板與 °亥第—側面冷卻板分別設置於該腔室單元之該引人段與該薄 膜形成段之間以及㈣_成段與該卸出段之間。 4.如請求項3所述之基板處理裝置，更包括： 第一側面貫穿孔與一第二側面貫穿孔，位於該腔室單 凡之一側壁上，並位於對應多個邊界的多個位置處，該些邊 '界〃於4引人段與該薄卿成段之間以及介於該薄膜形成段 25 201120983 與§亥卸出段之間；以及 —第一側面封蓋斑一笛-也，^ /、弟一側面封蓋，分別可移除地安裝 至該第一側面貫穿孔與該第二側面貫穿孔， 5. -中-玄第#丨面冷4卩板與該第二側面冷卻板分別與該第 一側面封蓋與該第二側面封蓋—體成型。 如請求項4所述之基板處理裝置，其中該腔室單元更包括- 滑軌’該滑執形成於該腔室單元之_下部内表面，並位於對 應該些邊界的多個位置處，該些邊界介於於該引人段與該薄 膜形成段之間以及介於該薄膜形成段與該卸出段之間，且 6. 該第-側面冷卻板與該第二側面冷卻板藉由在該等滑軌 上滑動而進出於該腔室單元之該内部空間。 如請求们所述之基板處理裝置，更包括至少一個冷啡單元’ ::-個冷啡單元設置於該材料喷嘴單元下方，用以收集 未沈積於該基板上而殘餘的沈積材料。 7. 一種基板處理裝置，包括： p 了車元’包括—内部空間，該内部空間包括一引入 段、一薄膜形成段及一卸出段； 成用個:科喷嘴早7^ ’設置於該腔室單元之該薄膜形 成中’用以喷射—沈積材料至所傳送之—基板；以及 個冷牌單疋’设置於該材料喷嘴單元下方用以 收集未沈積於該基板上㈣餘的沈積材料。 如請求^所述之基板處理裝置，其中該冷㈣元包括： 一基準面，設置成涵蓋一區域 設置有該材料喷嘴單元； —了。卩面積，該區域中 26 8. 201120983 2個散熱片，垂直地安裝至該基準面； 7部路徑，形成於料散 冷卻路徑中流動；以及 俾使一冷部水於该 一支撐封蓋， 9. ,_ 半面之至少一個側面。 如味未項8所述之基板處 -個第三側面貫穿孔置#中雜室單元包括至少 、 人 y 個第三側面貫穿孔开!成於今 腔室單元之—側劈 囬貝牙孔幵7成於5玄 戏之下邮A 1立於5又置有該材料喷嘴單元的該區 域之一下部部分；以及 ^支#封蓋係可移除地連接至該第三側面貫穿孔 由該支撐封蓋之公M ^ 汗接而分開及連接該冷阱單元。 10·如靖求項8所述之基板處理裝置， 地垂直安裝， 〜令5亥寺政熱片係相間隔 各該散熱片自該基準面延伸至長於該材料噴嘴單元之一 長度，以及 該等散熱片之多個上端具有自 諸。… ”兩自°亥冷阱早兀之二外部朝該 冷阱早疋之一中部逐漸減小之高度。 11 12 所収練處㈣置，其巾該冷料徑形成於該 專政熱片之外表面上，以面朝該冷钟單元之一中部。 如請求項8所述之基板處理裝置，其中該㈣單元包括至少 -個滑執’該至少一個滑執形成於該腔室單元之_下部内表 面上且位於设置有該冷阱單元之一位置處，且 該冷味單元之該基準面藉由在該滑轨上滑動而進出於註 腔室單元之該内部空間。 Α 13 如請求項8所述之基板處理裝置，更包括―冷卻板單元該 27 201120983 冷卻板單元設置成圍繞該腔室單元之該薄_成段，並適以 冷卻該薄膜形成段之内部。 14. 15. 16. 17. 18. 如請求項1或7所述之基板處理裝置，更包括-基板傳送單 几’該基板傳送單元設置於該腔室單元之該内部空間中，並 適以將該基板依序地傳送至糾人段、該薄膜形成段及該卸 出段。 月长項14所述之基板處理裝置，其中該基板傳送單元包括： 多數個第-滾輪’設置於該腔室單元之該引入段中； ν —第一滾輪，设置於該腔室單元之該薄膜形成段 中；以及 至第二滾輪，設置於該腔室單元之該卸出段中， 其中該等第-滾輪被供以—冷卻媒體並相應地被冷 且 该寺第二滾輪被選擇性地供以一冷卻媒體或一加熱媒 體，並相應地被冷卻或加熱。 如凊求項1或7所述之基板處理裝置，其中該材料噴嘴單元 包括： -直線式噴嘴’包括形成於其中的—饋送路徑，用於饋 送沈積材料以噴射該沈積材料；以及 貝 一反射器，圍繞該直線式噴嘴之一側部及一上部。 如請求項16所述之基板處理裝置，其中該反射器包括多數個 板構件，該等板構件係相間隔地交疊。 —種基板處理方法，包括： 冷钟-薄膜職段，以執行聽沈積，㈣卿成段形 28 201120983 成於一腔室單元之一内部空-間中； 引入—基板至該薄膜形成段； 藉由噴射一沈積材料至該基板，形成一薄膜層； 將未沈積於該基板上而殘餘的沈積材料收雜至，冷讲單 元； 自該薄膜形成段卸出該基板；以及 更換該冷阱單元。 19. 如明求項1 8所述之基板處理方法，更包括：於弓丨入該基板至 J薄膜形成段之前，冷卻該基板。 20. 々月长項18所述之基板處理方法，其中在形成該薄膜層期 間。。错由交替地操作設置於該薄卿成段中之至少二材料喷 嘴單元，連續地噴射該沈積材料。 29201120983 VII. Patent application scope: 1. A substrate processing device, including: cavity to early elementary 'including one inner Qiu Yun pq.. — bucket room, interior space including a lead #, a film forming section and a discharge section; at least one material nozzle single S, the film disposed in the chamber unit is formed for spraying. Spraying-depositing the material to one of the substrates conveyed; and ^, the cold plate is disposed 7L apart to surround the film forming section of the chamber unit, and is adapted to cool the inside of the film forming section. The substrate processing apparatus of claim 1, further comprising: an upper through hole and a lower through hole formed on an upper surface and a lower surface of the film forming portion of the chamber unit; The upper cover and the lower cover are respectively removably mounted to the upper through hole and the lower through hole, ▲ wherein the cooling plate unit comprises at least an upper cooling plate and a lower cooling plate, and a upper cooling plate and The cooling plates are respectively provided with the upper cover and the cover cover type. The substrate processing apparatus of claim 1, wherein the cooling plate unit comprises an i-side cooling plate and a second side cooling plate, wherein the first side cooling plate and the °H first-side cooling plate are respectively disposed on The guiding section of the chamber unit and the film forming section and between (4) and the discharging section. 4. The substrate processing apparatus of claim 3, further comprising: a first side through hole and a second side through hole located on one side wall of the chamber and located at a plurality of positions corresponding to the plurality of boundaries Where the edges are between the 4 introductory segments and the thin section, and between the film forming segments 25 201120983 and the § Hai unloading segment; and - the first side cover is a flute - Also, a side cover of the body is separately removably mounted to the first side through hole and the second side through hole, 5. - - - - - - - - - - - - - The side cooling plates are integrally formed with the first side cover and the second side cover. The substrate processing apparatus of claim 4, wherein the chamber unit further comprises a slide rail formed on a lower inner surface of the chamber unit and located at a plurality of positions corresponding to the boundary, a boundary between the guiding section and the film forming section and between the film forming section and the discharging section, and 6. the first side cooling plate and the second side cooling plate are The rails slide over the interior space of the chamber unit. The substrate processing apparatus of the present invention, further comprising at least one chiller unit'-'- chilling unit disposed below the material nozzle unit for collecting deposited material that is not deposited on the substrate. A substrate processing apparatus comprising: p a vehicle element comprising: an inner space, the inner space comprising an introduction section, a film forming section and a discharge section; forming a section: the nozzle is disposed 7 o' The film formation of the chamber unit is used to "spray-deposit material to the transferred substrate"; and a cold plate member is disposed under the material nozzle unit for collecting deposition material not deposited on the substrate (4) . The substrate processing apparatus of claim 2, wherein the cold (four) element comprises: a reference surface disposed to cover an area where the material nozzle unit is disposed;卩 area, in this area 26 8. 201120983 2 fins, mounted vertically to the datum; 7 paths formed in the material cooling path; and a cold part of the water in the support cap, 9. , _ at least one side of the half face. The substrate unit according to the item 8 is a third side through hole. The middle chamber unit includes at least one of the third side through holes. The front side of the chamber unit is turned into a side hole. 70% under the 5th play, the post A 1 stands on the lower part of the area where the nozzle unit of the material is placed; and the cover is removably connected to the third side through hole by the The male M ^ sweat supporting the cover is connected to separate and connect the cold trap unit. 10. The substrate processing apparatus according to claim 8, wherein the substrate is vertically mounted, and the heat sink is spaced from the reference surface to a length longer than one of the material nozzle units, and The upper ends of the heat sinks are self-contained. ... "The height of the two from the early half of the cold trap to the middle of the cold trap is gradually reduced. 11 12 The training room (four) is placed, the cold material diameter of the towel is formed outside the dictator The substrate processing apparatus of claim 8, wherein the (4) unit includes at least one slippery portion, the at least one slipper is formed in a lower portion of the chamber unit. The inner surface is located at a position where the cold trap unit is disposed, and the reference surface of the cold taste unit enters the inner space of the chamber unit by sliding on the slide rail. Α 13 as requested The substrate processing apparatus of 8 further comprising a "cooling plate unit" 27 201120983. The cooling plate unit is disposed to surround the thin portion of the chamber unit and is adapted to cool the inside of the film forming section. 14. 15. 16 17. The substrate processing apparatus according to claim 1 or 7, further comprising: a substrate transfer unit, wherein the substrate transfer unit is disposed in the inner space of the chamber unit, and is adapted to sequentially sequence the substrate Transfer to the correction section, the film is formed The substrate processing apparatus of the item of item 14, wherein the substrate transfer unit comprises: a plurality of first roller-shaped wheels disposed in the lead-in section of the chamber unit; ν - a first roller disposed at The film forming section of the chamber unit; and to the second roller disposed in the discharge section of the chamber unit, wherein the first roller is supplied with a cooling medium and correspondingly cooled and the temple The second roller is selectively supplied with a cooling medium or a heating medium, and is cooled or heated accordingly. The substrate processing apparatus of claim 1 or 7, wherein the material nozzle unit comprises: - a linear nozzle 'including a feed path formed therein for feeding a deposition material to eject the deposition material; and a shell-and-eye reflector surrounding one side of the linear nozzle and an upper portion. The substrate processing apparatus according to claim 16 Wherein the reflector comprises a plurality of plate members, the plate members are spaced apart at intervals. A substrate processing method comprising: a cold clock-film segment for performing auditory deposition, (4) Qingcheng Form 28 201120983 is formed in one of the interior cells of a chamber unit; introducing a substrate to the film forming section; forming a thin film layer by spraying a deposition material onto the substrate; remaining without depositing on the substrate The deposition material is mixed up to the cold-speaking unit; the substrate is discharged from the film forming section; and the cold-well unit is replaced. 19. The substrate processing method according to claim 18, further comprising: The substrate is cooled by the substrate before the J film is formed into a segment. 20. The substrate processing method according to Item 18, wherein during the forming of the film layer, the error is alternately operated in the thin layer. At least two material nozzle units continuously eject the deposited material. 29
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