JP2003100579A - Substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase a throughput of an apparatus by improving cooling efficiency. SOLUTION: The substrate treatment apparatus includes a cooling chamber 1 for cooling a plurality of wafers 2. The cooling chamber 1 has a plurality of substrate regions 16 formed at stages and separated thermally from each other. The plurality of substrate regions 16 are constituted with a plurality of corresponding heat shielding plats 3. The shielding of heat of the substrate regions 16 is carried out by causing cooling water 4 to flow around and cool a peripheral wall of a cooling tube 10 and the heat shielding plate 3. A cooling gas feeding system 25 is introduced individually in each substrate region 16, and cooling gas 5 is fed to each substrate region 16.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus having a processing chamber capable of cooling a plurality of substrates. 2. Description of the Related Art There are two types of substrate processing apparatuses, a batch processing apparatus and a single-wafer processing apparatus, both of which are cooling processing chambers for cooling a substrate after high-temperature processing to a temperature that can be processed in a subsequent process. Is required. FIG. 11 shows a cooling processing chamber of a conventional single-wafer processing apparatus. The cooling processing chamber 101 has a cooling container 10, and one substrate region 102 is formed inside the container. A plurality of wafers 2 are commonly cooled in one substrate region 102. The cooling gas 5 is introduced into the substrate region 102 from the cooling gas supply pipe 8 provided on one side, and is exhausted from the exhaust port 17 on the other side. The cooling water 4 circulates through the cooling container 10, for example. Gate valve 6
Are cooled by the cooling gas 5 and the cold radiation from the cooling vessel 10. As a result, the plurality of processed wafers 2 having been heated to a high temperature are cooled to a considerably low predetermined temperature. [0004] However, the above-mentioned prior art has the following problems. [0005] (1) In a single wafer processing apparatus, a substrate region originally configured to cool one wafer is
In order to cool a plurality of wafers, if the cooling capacity of the substrate region is set to be constant, the time for cooling to a predetermined temperature varies depending on the number of processed wafers. Therefore, it takes more time to cool a plurality of substrates to a predetermined temperature than to cool a single wafer. (2) In some single-wafer processing apparatuses, wafers subjected to high-temperature processing are transported to the cooling processing chamber with a time difference in order to increase throughput. In this case, both the leading wafer and the trailing wafer are cooled in the common substrate area,
Heat exchange occurs between the wafers, and the pre-cooled wafer is heated by the subsequent wafer. Therefore, it takes more time to cool the preceding wafer to the predetermined temperature. For this reason, in the conventional substrate processing apparatus, the cooling processing chamber is operated by setting a maximum cooling time in consideration of factors such as the number of processed wafers in (1) and the time difference cooling in (2). is the current situation. As a result, the cooling processing time becomes longer, and the throughput of the apparatus is reduced. The above problem is not limited to the single wafer processing apparatus, but is common to batch processing apparatuses for processing a large number of substrates. I have. An object of the present invention is to provide a substrate processing apparatus capable of solving the above-mentioned problems of the prior art, improving the cooling processing efficiency, and improving the throughput of the apparatus. According to the present invention, there is provided a substrate processing apparatus provided with a processing chamber capable of cooling a plurality of substrates, wherein a plurality of substrate areas thermally isolated from the processing chamber are provided. And a cooling medium is supplied to each of the plurality of substrate regions. Since a plurality of substrate regions to be thermally shielded are formed, if a plurality of substrates are divided and accommodated in each substrate region, they are not affected by disturbances such as receiving heat from other substrates. The substrate existing in the substrate area can be cooled. Further, since the cooling medium is supplied to each substrate region, regardless of the number of substrates or the substrate region,
The cooling time of the substrate can be made uniform. Therefore, the cooling efficiency is improved and the throughput of the apparatus is improved. In the above invention, it is preferable that the plurality of substrate regions are formed by partitioning the processing chamber with a heat shield. In this case, it is preferable that the cooling medium is supplied from the heat shield. By simply providing a heat shield between a plurality of substrates accommodated in the processing chamber, a plurality of substrate regions capable of individually accommodating substrates can be formed. In addition, when the cooling medium is supplied from the heat shield, the cooling medium is supplied from the vicinity of the substrate as compared with a case where the cooling medium is vaguely supplied to the processing chamber, so that the substrate can be efficiently cooled. Further, in the above invention, it is preferable that a cooling medium for cooling the heat shield is supplied to the heat shield. The heat shield may be formed by selecting a material having poor heat conductivity. However, when the heat shield circulates the cooling medium, heat received from the substrate can be more effectively blocked. Therefore, in this case, the cooling medium supplied for each substrate region of the plurality of substrate regions includes a cooling medium supplied for directly cooling the substrate, and a cooling medium supplied to a heat shield and a processing chamber for partitioning the substrate region. Both cooling media are included. Embodiments of the present invention will be described below. FIG. 1 is a front sectional view of a cooling processing chamber according to an embodiment provided in the substrate processing apparatus. Here, the substrate processing apparatus is not limited to a narrow processing apparatus including a cooling processing chamber and peripheral equipment such as a supply / exhaust system, but is also a semiconductor manufacturing apparatus including a cooling processing chamber, a heat treatment chamber, a film forming chamber, and a transfer robot. Including equipment. The cooling chamber 1 has a predetermined volume capable of holding and cooling a plurality of wafers 2 in multiple stages. In the illustrated example, three sheets can be cooled at the same time. The cooling container 10 forming the cooling processing chamber 1 is formed airtight. A gate valve 6 is provided on one side of the opening, from which the wafer 2 can be taken in and out by a transfer robot (not shown). The gate valve 6 may be made of a heat insulating material or may have a water cooling jacket structure as needed. A cooling gas supply system 25 is provided on one side of the bottom.
However, the exhaust ports 17 are provided on the other side, respectively, so that the cooling gas 5 is supplied into the cooling processing chamber 1 and exhausted. A water cooling jacket 22 is provided on the peripheral wall of the cooling container 10, and circulates the cooling water 5 to cool the cooling container 10 and the inside of the container. The cooling processing chamber 1
As described above, the container 10 is capable of supporting a vacuum,
Further, it is preferable to have the gate valve 6. In the cooling processing chamber 1, three substrate regions 16 (16a, 16b, 16c) which are thermally isolated from each other are formed. The substrate region 16 is a space for cooling one wafer 2. Three substrate regions 16a, 16b,
16c, the cooling chamber 1 is formed in multiple stages by three heat shield plates 3 as heat shields. The cooling gas supply system 25 described above is connected to these heat shield plates 3,
The cooling gas 5 is supplied from the heat shielding plate 3 to each substrate processing area 16. Further, cooling water is circulated through the heat shield plate 3 in the same manner as the peripheral wall of the cooling vessel 10 to cool the heat shield plate 3. Although not shown in FIG. 1, a cooling water supply system that supplies cooling water to the heat shielding plate 3 includes:
It is provided in addition to the cooling gas supply system 25. The substrate region 16 is divided into three by the plate-shaped heat shield plate 3 provided in the cooling processing chamber 1 as described above, while securing a space between the common exhaust space and the cooling gas supply system 25 on the left and right. It is sectioned. Therefore, the outer periphery of each substrate region 16 is not structurally closed. However, each substrate region 16 is thermally closed. That is, the first substrate region 16c is vertically surrounded by the first heat shield plate 3c and the second heat shield plate 3b, and the left, right, front and rear (front and back of the paper) is the side wall 10b of the cooling container 10. Each is surrounded by a gate valve 6 and is thermally closed. Second substrate area 1
6b, the upper and lower parts are the second heat shield plate 3b and the third heat shield plate 3b.
a, the left and right and front and rear sides of the cooling vessel 10
b and the gate valve 6 and are thermally closed. The upper and lower sides of the third substrate region 16a are surrounded by the upper wall 10a of the cooling container 10 and the third heat shield plate 3a,
The left, right, front and rear are surrounded by the side wall 10b of the cooling container 10 and the gate valve 6, and are thermally closed. FIG. 2 is an enlarged view of a portion C encircled in FIG. Each heat shield plate 3 has a two-layer structure, and a cooling water flow path 31 is formed in a lower layer, and the cooling water 4 is circulated and supplied from the cooling water supply system 24 to the cooling water flow path 31. A cooling gas flow path 32 is formed in the upper layer, and the cooling gas 5 is supplied from a cooling gas supply system 25, is ejected from the surface of the heat shield plate 3, and hits the back surface of the wafer 2. The plurality of heat shield plates 3 are unitized as described below to facilitate maintenance. FIG. 3 is a front sectional view of the heat shielding unit.
A first heat shield plate 3c, a second heat shield plate 3b, and a third heat shield plate 3a are provided in multiple stages on a column 7 erected on the base plate 23 in an upward direction from below. The base plate 23 is placed below the cooling processing chamber 1.
The first wafer 2 is placed between the first heat shield plate 3c and the second heat shield plate 3b, and the second heat shield plate 3b and the third heat shield plate 3b.
a, and the third wafer 2 is stacked above the third heat shielding plate 3a. Also, the ends of the heat shield plates 3 on the mounting side of the pipes 8 and 9 are extended so as to go upward, so that the pipes 8 and 9 suspended from the heat shield plates 3 do not interfere with each other. It is. The reason why the heat shield plates 3 and the wafers 2 are alternately stacked as described above is that the distance between each of the wafers 2 entering the cooling processing chamber 1 and the heat shielding plate 3 becomes equal, and thus the cooling processing chamber 1 is stacked. This is for equalizing the cooling efficiency of each wafer 2 in the inside. Since the heat shield plate 3 is a cooling source, the distance A from the heat shield plate 3 to the wafer 2 disposed above the heat shield plate 3, the distance B from the wafer 2 to the heat shield plate 3 disposed above the heat shield plate 3, The shorter the distance B between the upper wafer 2 and the upper wall, the better the cooling efficiency. However, the minimum dimension is determined by the restriction that comes from the wafer unloading mechanism of the transfer robot (not shown) and the thickness of the heat shield plate 3. The above-mentioned heat shielding unit is specifically configured as follows. FIG. 4 is an assembled perspective view of the heat shielding unit. Four columns 7 are erected, and three rectangular heat shield plates 3 are attached in multiple stages in the direction in which the columns 7 are erected. The three heat shield plates 3 are attached at equal intervals in parallel with each other. The uppermost space on the third stage heat shield plate 3a, the space between the third stage heat shield plate 3a and the second stage heat shield plate 3b, and the second stage heat shield plate 3b and the first stage The wafers 2 are held one by one at a total of three places in the space with the heat shield plate 3c. The three wafers 2 are held between the four columns 7 in multiple stages in a horizontal posture. FIG. 5 is an exploded perspective view of the heat shielding unit. The four columns 7 are made of quartz, and are erected in a semicircular shape on a base plate 23 also made of quartz. In particular, the column 7 is made of quartz in order to hold the wafer 2 with the column 7 so as to prevent contamination of the wafer and secure processing accuracy for horizontal holding. Here, for convenience, the three wafers 2 are drawn so as to be held on the four columns 7 without the heat shield plates 3 interposed therebetween. It is held on the upper heat shield plate 3. The three heat shielding plates 3 are configured in common. Each heat shield plate 3 shields the substrate region from heat so that the heat of the wafer 2 is not released from the substrate region. Further, the wafer 2 is cooled by supplying the cooling gas 5 to the substrate area. A cooling water supply pipe 8a for supplying and discharging cooling water and a cooling water discharge pipe 8b are provided on the lower surface of one side of the rectangular heat shield plate 3 so as to hang down. Cooling water supply pipe 8a
The cooling water is supplied to the inside of the heat shielding plate 3 and discharged from the cooling water discharge pipe 8b, thereby cooling the heat shielding plate 3 and performing heat shielding between the wafers 2. On the lower surface on the same side of the heat shield plate 3, a cooling gas supply pipe 9 for supplying a cooling gas is provided so as to hang down. A large number of gas ejection holes 18 for ejecting a cooling gas in a shower shape are provided on the upper surface of the heat shield plate 3. The cooling gas is supplied from the cooling gas supply pipe 9 to the inside of the heat shielding plate 3, and the cooling gas is ejected in a shower form from the gas ejection holes 18 on the upper surface of the heat shielding plate 3 to cool the wafer 2. I have. Gas injection hole 1 formed in heat shield plate 3
8 is preferably formed uniformly over an area wider than the wafer surface in order to cool the wafer 2 uniformly. However, as shown in the illustrated example, the heat shield plate 3 is provided with four support hole insertion holes 20 for inserting the columns 7 so that the four columns 7 do not interfere with the heat shield plate 3. Can be The gas injection holes 1 are formed by the support holes 20.
8 may be restricted. In the case of the illustrated example, the region for forming the gas ejection holes 18 is formed in a cross shape in order to cool the wafer 2 uniformly within the constraints. FIG. 6 is a perspective view showing only one of the three heat shield plates 3 described above. As shown in an exploded perspective view of FIG. 7, the heat shield plate 3 has a laminated structure including five plates 11 to 15. The cooling water flow path 31 is constituted by the first to third plates 11 to 13 counted from the bottom. The third to fifth plates 13 to 15 constitute the cooling gas passage 32. The second cooling water flow path plate 12 constituting the cooling water flow path 31 extends from the center of one side on the side where the cooling water is introduced to the opposite side, and the cooling water flow path 31 is defined as the outward path. Separation section 21 for return path, for example, U-shape
And four projecting pieces 26 for forming the support hole 20.
It is punched out in a frame shape, leaving behind. The first cooling water inlet / outlet plate 11 in the lowermost layer serves as a bottom plate, and at both ends of a side corresponding to one side of the cooling water channel frame, a cooling water supply pipe 8 communicating with an outward path of a U-shaped cooling water channel 31.
a, and a cooling water discharge pipe 8b communicating with the return path of the U-shaped cooling water flow path 31 is provided to hang down. The third cooling gas introduction plate 13 serves as an upper lid of the cooling water flow passage 31, and a cooling gas introduction pipe 9 is provided at one end of one side thereof so as to hang down. The second cooling water channel plate 12 is connected to the first cooling water inlet / outlet plate 11 serving as a bottom cover and the third cooling water passage plate 12 serving as an upper cover.
By sandwiching between the second cooling gas introduction plate 13 and
A U-shaped cooling water passage 31 through which cooling water flows is formed. The cooling water supply pipe 8a is introduced into the U-shaped cooling water flow path 31 from the above-described cooling water supply pipe 8a, flows into a U-shape, and flows into the U-shaped cooling water discharge pipe 8.
b. The fourth cooling gas flow path plate 14 constituting the cooling gas flow path 32 is punched out in a frame shape except for four projecting pieces 27 for forming the support hole 20. Third cooling gas introduction plate 13 described above
Is a bottom plate, and a cooling gas supply pipe 9 communicating with the cooling gas flow path 32 is provided on one side of the lower surface thereof as described above. The fifth shower plate 15 provided with a number of gas ejection holes 18 serves as an upper lid of the cooling water channel 32.
By sandwiching the fourth cooling gas flow path plate 14 between the third cooling gas introduction plate 13 serving as a bottom cover and the uppermost shower plate 15 serving as an upper cover, a cooling gas in which cooling gas flows is provided. The flow path 32 is configured. The cooling gas is introduced from the cooling gas supply pipe 9 into the cooling gas flow path 32 and is ejected from the gas ejection holes 18 in a shower shape. The five plates 11 to 15 are provided with the above-mentioned four support holes 20 in common.
Further, since the cooling water flow path 31 has a simple shape in which a groove is cut in the plate 12, the cooling water flow path 31
Is the height of the cooling water passage 31. Plate 11-
The thickness of 15 is about t = 2 to 5 mm in consideration of the number of wafers that can be stored in the cooling processing chamber 1. In addition, the common dimension of the five plates 11 to 15 is set to be larger than that because the effect is not sufficiently exhibited if the dimension is smaller than the wafer. The five plates 11 to 15 are joined by laser welding or the like. The materials of the plates 11 to 15 are welded and have a cooling water passage 31 so that
US is preferred. However, in addition to SUS, other materials may be used as long as they can cope with the joining method and corrosion. As the cooling water, the cooling water used as the substrate processing apparatus is used as it is. Therefore, although the cooling water temperature is not particularly adjusted, it is about 23 ± 3 ° C. Further, the flow rate and the flow rate of the cooling water can be adjusted by the flow area and the flow length of the cooling water flow path 31 provided in the heat shield plate 3. Also,
An inert gas is used as a cooling gas. In particular, N ₂ or He having _high cooling efficiency is preferable. The flow path and the flow velocity of the cooling gas can be adjusted in the cooling gas flow path 32 similarly to the cooling water. Although the temperature in the cooling processing chamber 1 is affected by the temperature of the incoming wafer, the provision of the heat shield plate 3 allows the radiant heat of the wafer to be adjusted by adjusting the flow rates of the cooling water and the cooling gas. The part that is not affected can be brought to the same temperature as the cooling gas. Further, the flow rate and the exhaust speed of the gas exhausted from the exhaust port 17 of the cooling processing chamber 1 also have a relationship with the flow rate of the cooling gas. Adjust the pressure to atmospheric pressure. If the loading and unloading of wafers into and from the cooling chamber 1 is carried by vacuum, the cooling chamber is evacuated. FIG. 8 shows an example of a structure for taking out pipes from the cooling vessel. A hollow stud bolt 36 through which the pipe 8 can be inserted is welded to the outer peripheral portion of the pipe outlet hole provided in the cooling container lower wall 10c. The pipe 8 is inserted from the hollow portion of the stud bolt 36 into the pipe outlet hole, and the sleeve 35 and the O-ring 38 are fitted into the pipe 8 in the stud bolt. Further, a cap nut 37 having a hole is inserted into the pipe 8, the cap nut 37 is screwed to the stud bolt 36, and the sleeve 35 and the O-ring 38 in the stud bolt 36 are tightened.
Thus, the O-ring 38 seals the pipe insertion portion of the cap nut 37. With such a seal structure, the heat shield unit can be removed from the cooling processing chamber during maintenance. In the configuration of the above-described embodiment, since a plurality of substrate regions 16 which are thermally shielded are formed, if a plurality of wafers 2 are sorted and accommodated in each substrate region 16, other wafers 2 The wafer 2 existing in the substrate region 16 can be cooled without being affected by disturbance such as receiving heat from the substrate 2. Therefore, multiple sheets (2-
Even when processing (three) wafers 2, this is the same as the case of cooling one wafer 2, and there is no difference in cooling time depending on the number of wafers 2. Therefore, no time is required for cooling one wafer 2 or for cooling a plurality of wafers 2. Further, even when the wafer 2 after the high-temperature processing is transferred to the cooling processing chamber 1 with a time lag as in a single wafer processing apparatus, since the substrate region 16 is independent, Heat exchange does not occur, and it does not take time for the preceding wafer 2 to cool to the predetermined temperature, and it is possible to take out the cooled wafer 2 from the cooling processing chamber in advance. The temperature of the wafer conveyed to the cooling processing chamber 1 depends on the processing temperature of the wafer in the preceding process.
About 600 ° C. The temperature at which the wafer is cooled and taken out of the cooling processing chamber is preferably 90 ° C. or less. In order to improve the throughput of the apparatus, the shorter the cooling time, the better. It is not necessary to cool down to room temperature if there is no problem in the subsequent steps. It is sufficient that the temperature is not higher than the temperature at which the cassette resin for receiving the taken-out wafer does not deform. The wafer dimensions are
For example, φ = 300 to 200 mm. Therefore, even in a single-wafer processing apparatus, it is not necessary to set the maximum cooling time in consideration of factors such as the number of sheets to be processed and time-lag cooling, so that the cooling processing time becomes longer, and the throughput of the apparatus is greatly increased. To improve. A plurality of substrate regions 16 which are thermally shut off
Is constituted by the heat shielding plate 3 cooled by the cooling water, the heat shielding effect between the substrate regions 16 is great in cooperation with the cooling vessel 10 having the water cooling jacket 22, and the wafer 2 in the substrate region 16 Thermal interference can be effectively prevented. Further, since the cooling gas 5 is supplied to each substrate region 16, the cooling time of the wafer 2 can be made uniform regardless of the number of wafers 2 and the substrate region 16. In particular, since the cooling gas 5 is blown out in the form of a shower and blown onto the lower surface of the wafer 2, the wafer 2 can be cooled uniformly. Further, since the cooling water flow path 33 is formed adjacent to the cooling gas flow path 32, the cooling gas 5 can be uniformly cooled by the cooling water 4. Further, since the plurality of substrate regions 16 define one cooling processing chamber 1 by the plurality of heat shielding plates 3, the number of the cooling processing chambers is smaller than that in the case where a plurality of cooling processing chambers are provided in parallel.
The structure can be simplified. Further, since the cooling gas 5 is supplied in a shower form from the heat shielding plate 3 facing the wafer 2 in parallel, the cooling gas 5 is supplied from one side of the cooling processing chamber 1.
Is supplied more uniformly from the vicinity of the wafer 2 than in the case where the wafer 2 is supplied, so that the wafer 2 can be cooled efficiently. Since the cooling water 4 for cooling the heat shielding plate 3 is made to flow through the heat shielding plate 3, the heat received from the wafer 2 is more effectively blocked as compared with the case where a material having poor thermal conductivity is selected and a passive material is used. can do. In particular, since the wafer 2 is sandwiched under the same conditions as the peripheral wall to be cooled with water at the uppermost stage of the heat shielding plate 3, the heat shielding plate 3
Even with the wafer 2 housed in the uppermost stage, which tends to have different conditions from the wafer 2 housed between the wafers, the uniformity between the two surfaces of the wafer 2 is improved. In the above-described embodiment, as shown in FIG. 2, the heat shield plate 3 has a two-layer structure, in which the cooling water 4 flows in the lower layer and the cooling gas 5 flows in the upper layer. The cooling gas 5 is ejected from the surface of the plate 3. However, the present invention is not limited to this configuration. For example, as shown in FIG. 9, the cooling water 4 may be supplied to the upper layer, the cooling gas 5 may be supplied to the lower layer, and the cooling gas 5 may be ejected from the back surface of the heat shield plate 3. As shown in FIG. 10, the heat shield plate 3 has a three-layer structure, in which the cooling water 4 flows in the middle layer, and the cooling gas 5 flows in the upper and lower layers sandwiching the middle layer. You may comprise so that it may spout from the front and back of the board 3. In this case, it is necessary to keep the cooling efficiency of each wafer 2 in the cooling processing chamber uniform by making the distance between the cooling sources of each wafer 2 equal. Therefore, the upper wall 10a of the cooling vessel 10 (see FIG. 1) is also provided on the upper wall 10a (see FIG. 1) of the uppermost wafer 2 which is cooled from one side so as to have the same cooling conditions as the intermediate wafer 2 which is cooled from the front and back sides. It is preferable that a cooling gas flow path and a peripheral wall shower plate are formed so that the cooling gas 5 is also ejected from the upper wall 10a. When the cooling gas 5 is ejected from the peripheral wall of the cooling vessel 10 as described above, the distance of the wafer 2 from the position where the cooling gas 5 is ejected from the heat shield plate 3 is set to the same position, or the cooling gas 5 is evenly applied to each wafer 2. It is necessary to install a shower plate on the surrounding wall so that the water flows. According to the present invention, a plurality of substrate regions which are thermally cut off are formed in the processing chamber, and a cooling medium is supplied to each substrate region. It can be improved, and as a result, the throughput of the device can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front sectional view of a cooling processing chamber according to an embodiment. FIG. 2 is an enlarged view of a portion C in FIG. 1; FIG. 3 is a front view of the heat shielding unit according to the embodiment. FIG. 4 is a perspective view of a heat shielding unit according to the embodiment. FIG. 5 is an exploded perspective view of the heat shielding unit according to the embodiment. FIG. 6 is a perspective view of a heat shield plate constituting the heat shield unit according to the embodiment. FIG. 7 is an exploded perspective view of the heat shield plate according to the embodiment. FIG. 8 is an explanatory diagram showing a pipe sealing structure according to the embodiment. FIG. 9 is a view showing a modification of the heat shield plate corresponding to FIG. 2; FIG. 10 is a view showing another modified example of the heat shield plate corresponding to FIG. 2; FIG. 11 is a front sectional view of a cooling processing chamber according to a conventional example. [Description of Signs] 1 Cooling processing chamber 2 Wafer (substrate) 4 Cooling water (cooling medium) 5 Cooling gas (cooling medium) 16 Substrate area

Claims (1)

Claims: 1. A substrate processing apparatus having a processing chamber capable of cooling a plurality of substrates, wherein the processing chamber includes a plurality of substrate regions that are thermally shut off. A substrate processing apparatus configured to supply a cooling medium to each of a plurality of substrate regions.