KR101097738B1 - Substrate processing apparatus and method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a method for preventing the substrate from being heated and efficiently collecting excess deposition material. Particularly, the substrate processing apparatus according to an embodiment of the present invention includes a drawing section, a film forming section, and a drawing section. A chamber unit having an inner space divided by the intervals; At least one material injection nozzle unit for injecting deposition material onto a substrate that is positioned and moved in the deposition section of the chamber; And a cooling plate part positioned to surround the deposition section of the chamber to cool the inside of the deposition section.

The substrate processing apparatus further includes at least one cold trap unit positioned below the material injection nozzle unit to collect excess deposition material not deposited on the substrate among deposition materials sprayed from the material injection nozzle unit.

Solar cell, deposition, substrate, continuous process

Description

Substrate Processing Apparatus and Method {SUBSTRATE PROCESSING APPARATUS AND METHOD}

TECHNICAL FIELD The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method capable of preventing the substrate from being heated and efficiently collecting excess deposition material.

Solar cells are manufactured by, for example, forming selenium (Se) or a compound including the same as a thin film on a substrate for a solar cell and patterning the same in a predetermined pattern. That is, a plurality of thin film layers are formed on a glass substrate through a deposition method such as vapor deposition, chemical vapor deposition (CVD), or physical vapor deposition (PVD), and patterned to manufacture a solar cell. do.

This solar cell deposition material is heated in a vaporizer and supplied to the glass substrate in a vaporized state. Accordingly, the transfer line and the injection means of the deposition material are heated by the heating means to move the deposition material to the glass substrate while maintaining the vaporized state. Therefore, there is a problem that the temperature inside the chamber is increased by the transfer line and the injection means that are heated, and thus, the glass substrate introduced into the chamber is heated, thereby lowering the deposition efficiency of the deposition material.

In addition, as the deposition efficiency of the deposition material is lowered, the excess deposition material not deposited on the glass substrate is deposited on the inner wall of the chamber or on the outer circumferential surface of various components inside the chamber, thereby contaminating the device and thus reducing the lifetime of the device. .

The present invention has been made to solve the above problems, by intensively cooling the deposition section in which the deposition process is performed inside the chamber to prevent the substrate flowing into the deposition section is heated to improve the deposition efficiency of the deposition material A substrate processing apparatus and method are provided.

In addition, the present invention provides a substrate processing apparatus and method which includes means for collecting excess deposition material in the film forming section, thereby preventing contamination of the device by the excess deposition material, thereby extending the life of the apparatus.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber unit having an inner space divided in order of inlet section, film formation section and drawout section; At least one material injection nozzle unit for injecting deposition material onto a substrate that is positioned and moved in the deposition section of the chamber; And a cooling plate part positioned to surround the deposition section of the chamber to cool the inside of the deposition section.

Upper and lower through-holes are formed on upper and lower surfaces of the chamber portion forming section, respectively, and an upper cover and a lower cover are provided to be detachably disposed in the upper and lower through holes, respectively. The plate portion includes an upper cooling plate and a lower cooling plate which are integrally provided at least in the upper cover and the lower cover, respectively.

The cooling plate part includes first and second side cooling plates positioned between an inlet section and a deposition section of the chamber, and between a deposition section and a drawing section.

First and second side through-holes are formed in one side wall of the chamber part corresponding to the boundary between the inlet section and the deposition section of the chamber section and the boundary section between the deposition section and the drawing section, respectively, in the first and second side through holes, respectively. The first and second side covers are provided to be detachably arranged, and the first and second side cooling plates are integrally provided in the first and second side covers, respectively.

A sliding part is formed on the lower side corresponding to the boundary between the inlet section and the deposition section of the chamber section and the boundary section between the deposition section and the drawing section, and the first and second side cooling plates slide on the sliding section, respectively. Characterized in that it is introduced into and withdrawn from the interior space.

The substrate processing apparatus further includes at least one cold trap unit positioned below the material injection nozzle unit to collect excess deposition material not deposited on the substrate among deposition materials sprayed from the material injection nozzle unit.

A substrate processing apparatus according to an embodiment of the present invention includes a chamber unit having an inner space divided in order of inlet section, film formation section and drawout section; At least one material injection nozzle unit for injecting deposition material onto a substrate that is positioned and moved in the deposition section of the chamber; And at least one cold trap unit positioned below the material injection nozzle unit to collect excess deposition material not deposited on the substrate among deposition materials sprayed from the material injection nozzle unit.

The cold trap portion having a base surface disposed in an area including a lower area of an area in which the material injection nozzle portion is disposed; A plurality of cooling sinks installed in the base surface; A cooling passage formed in the cooling sink and through which cooling water flows; A support cover for supporting at least one side of the base surface.

At least one third side through hole is formed in a lower region of an area where the material injection nozzle part is disposed in one side wall of the chamber, and the support cover is disposed to be detachable from the third side through hole. When detaching the cold trap unit is characterized in that the integral replacement.

The plurality of cooling sinks are spaced apart from each other, each cooling sink is extended in the base surface longer than the length of the material injection nozzle portion, and each of the cooling sink top height is located in the center of the cooling sink disposed on both outer sides It is characterized in that the lower toward the cooling sink arranged sequentially.

The cooling flow path is characterized in that formed on the surface of the outer peripheral surface toward the center of the cooling trap portion of the outer peripheral surface of the cooling sink.

At least one sliding part is formed on a lower side of the chamber part in which the cold trap part is disposed, and the base surface of the cold trap part slides on the sliding part, and is drawn in and drawn out into the inner space of the chamber part.

The substrate processing apparatus further includes a cooling plate portion positioned to surround the deposition section of the chamber and cooling the inside of the deposition section.

The substrate processing apparatus may further include a substrate transfer unit positioned in an inner space of the chamber to move the substrate in the order of the drawing section, the film forming section, and the drawing section.

The substrate transfer unit and a plurality of first rollers provided in the inlet section of the chamber; At least two or more second rollers provided in the deposition section of the chamber portion; At least two or more third rollers are provided in the withdrawal section of the chamber portion, a cooling medium is supplied and cooled inside the first roller, and a cooling medium and a heating medium are selectively supplied and cooled inside the second roller. Or heated.

A linear nozzle configured to supply a deposition path through which the deposition material is supplied, and to spray the deposition material therein; And a reflector surrounding the sides and the top of the linear nozzle.

The reflector is characterized in that the plurality of plate bodies are arranged so as to be spaced apart from each other overlap.

The substrate processing method according to the present invention comprises the steps of: cooling the film forming section in which the deposition process is performed in the internal space of the chamber portion; Introducing a substrate into the film forming section; Spraying a deposition material onto the substrate to form a thin film layer; Collecting excess deposition material not deposited on the substrate among the sprayed deposition materials into a cold trap portion; Extracting the substrate from the film forming section; Replacing the cold trap part.

And prior to introducing the substrate into the deposition section, cooling the substrate in advance.

The forming of the thin film layer on the substrate may be performed by alternately operating at least two or more material spray nozzles provided in the film forming section to continuously spray the deposition material.

According to an embodiment of the present invention, the efficiency of depositing the deposited material on the substrate may be improved by directly or indirectly cooling the substrate while eliminating the environment where the substrate may be heated inside the apparatus as much as possible.

In addition, a means for collecting excess deposition material generated during the deposition process of the deposition material may be provided to prevent contamination of the inside of the device by the excess deposition material, thereby extending the life of the device.

In addition, cooling devices for cooling the reaction space and collecting means for collecting excess evaporation material can be easily detached to the device, which is provided around the film formation section inside the device, so that parts that mainly cause contamination can be selectively replaced. Maintenance and maintenance of the apparatus can be performed easily.

In addition, at least two means for supplying the deposition material in the deposition section of the chamber is provided to sequentially supply and fill the deposition material can be carried out the deposition process of the deposition material.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like numbers refer to like elements in the figures.

1 is a cross-sectional conceptual view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional conceptual view schematically showing a main part detachment and detachment of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a longitudinal cross-sectional conceptual view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a longitudinal cross-sectional conceptual view schematically showing detachment and detachment of main parts of a substrate processing apparatus according to an embodiment of the present invention. 6 is a view illustrating a material injection nozzle unit of a substrate processing apparatus according to an embodiment of the present invention, and FIGS. 6A and 6B are views illustrating a cold trap unit of a substrate processing apparatus according to an embodiment of the present invention.

As shown in the drawings, a substrate processing apparatus according to an embodiment of the present invention includes a chamber unit 100 having an inner space divided into an inlet section 121, a deposition section 123, and a drawout section 125; A substrate transfer part 200 positioned in the inner space of the chamber part 100 to move the substrate in the order of the inlet section 121, the film forming section 123, and the drawing section 125; At least one material injection nozzle unit 300 for injecting deposition material onto a substrate that is positioned and moved in the deposition section 123 of the chamber part 100; A cooling plate part 400 positioned to surround the film forming section 123 of the chamber part 100 to cool the inside of the film forming section 123; Located at the bottom of the material injection nozzle unit 300 includes at least one cold trap unit 500 for collecting the excess deposition material that is not deposited on the substrate of the deposition material injected from the material injection nozzle unit 300 .

The chamber part 100 is provided with entrance and exit openings 110a and 110b on one side and the other side thereof, for entering and withdrawing the substrate. In addition, a slot valve 111a or 111b or a gate valve may be further provided to shield the entrances and exits 110a and 110b. In this case, the chamber part 100 may be connected to a space, for example, a load lock chamber, for waiting for the introduction and withdrawal of the substrate through the slot valves 111a and 111b. In addition, the entrances 110a and 110b into which the substrate is introduced may be connected to a cooling chamber for pretreating, for example, cooling the substrate.

In addition, the internal space of the chamber part 100 may include an inlet section 121 through which the substrate is sequentially inserted and moved, a film forming section 123 in which the deposition process is performed on the substrate, and a drawing section which is moved so that the substrate on which the deposition is completed is withdrawn ( 125). In this case, the drawing section 121, the film forming section 123 and the drawing section 125 is preferably not functionally divided by the partition wall, but functionally divided according to the movement of the substrate and the deposition process. Of course, the present invention is not limited thereto, and partition walls may be physically partitioned by installing barrier ribs on the boundary surfaces of the inlet section 121, the deposition section 123, and the drawout section 125. In addition, the plurality of chambers serving as the inlet section 121, the deposition section 123 and the outlet section 125 may be implemented in communication with each other.

In addition, as shown in the upper and lower surfaces of the chamber portion 100, the upper through hole 131 and the lower through hole 133 is formed, respectively, the upper through hole 131, the cooling plate portion to be described later The upper cover 411 and the lower cover 421 of the 400 are respectively inserted and mounted to shield the upper through hole 131 and the lower through hole 133, respectively. In addition, a first sidewall of the chamber part 100 corresponding to the boundary between the inflow section 121 and the deposition section 123 of the chamber part 100 and the boundary between the deposition section 123 and the outgoing section 125 may be provided. And second side through holes 135a and 135b, and the first and second side through holes 135a and 135b have first and second side covers 431a, respectively, of the cooling plate 400 described later. 431b are respectively inserted and mounted to shield the first and second side through holes 135a and 135b, respectively. In addition, at least one third side through hole 137a and 137b is formed in a lower region of one sidewall of the chamber part 100 where the material injection nozzle part 300 is disposed, and the third side through hole is formed. A support cover 540 of the cold trap part 500 to be described later is inserted into 137a and 137b to shield the third side through holes 137a and 137b, respectively.

Accordingly, the entrance and exit ports 110a and 110b are shielded by the slot valves 111a and 111b, and the upper through hole 131 and the lower through hole 133 are provided by the cooling plate part 400 and the cold trap part 500. When the first to third side through holes 135a, 135b, 137a, and 137b are shielded, the inner space of the chamber part 100 is sealed. Therefore, the cooling plate 400 and the cold trap 500 is coupled to the chamber 100 to be removable and sealed.

The substrate transfer part 200 includes a plurality of first rollers 210 provided in the inlet section 121 of the chamber part 100 and at least two or more provided in the film forming section 123 of the chamber part 100. And second rollers 220a and 220b and at least two or more third rollers 230 provided in the drawing section 125 of the chamber part 100. The first to third rollers 210, 220, and 230 are means for moving the substrate by being rotated by separate driving means (not shown) when the substrate is seated on the upper surface thereof.

At this time, the first roller 210 is supplied with a cooling medium, for example, cooling water, and is cooled. The second roller 220 is selectively supplied with a cooling medium and a heating medium, for example, cooling water and heating water. And cooled or heated.

In particular, the first roller 210 is a means for moving the substrate drawn into the inlet section 121 to the deposition section 123, and cools the substrate W drawn into the inlet section 121. Therefore, as the plurality of first rollers 210 are arranged closer to each other than the arrangement of the second rollers 220, the first rollers 210 increase the contact area between the substrate and the first rollers 210, and thus the first rollers 210 may be formed by the first rollers 210. Allow cooling of the substrate.

The second roller 220 and the third roller 230 are respectively disposed in the deposition section 123 and the withdrawal section 125 to transfer the substrate moved from the drawing section 121 to the film forming section 123 and the drawing section ( As a means for moving to 125, it is preferable that the minimum number is provided to move the substrate in consideration of the length of the substrate. For example, the front end and the rear end of the deposition section 123 and the withdrawal section 125 are respectively disposed one by one. In the present embodiment, four second rollers 220a and 220b are disposed in the film forming section, and two third rollers 230 are arranged in the drawing section 125.

In particular, since the second rollers 220a and 220b can select a cooling action and a heating action, the second rollers 220a and 220b are heated by the second rollers 220a and 220b during the deposition process. Excess deposition material that is not deposited on the substrate among the materials may be attached to the second rollers 220a and 220b to prevent the surfaces of the second rollers 220a and 220b from being contaminated. Meanwhile, in order to improve the deposition rate of the deposition material, as the second rollers 220a and 220b are cooled, the substrate moved in contact with the second rollers 220a and 220b may be cooled.

At least one material injection nozzle unit 300 is provided in at least one deposition section 123 of the chamber unit 100 as a means for injecting the deposition material on the substrate, the material injection nozzle unit 300 for the continuous deposition process It is preferable to provide two or more. In this embodiment, two material injection nozzle units 300 are provided. Thus, in the deposition process, one material spray nozzle unit 300 (310a, 320a) is operated to inject a deposition material onto a substrate, and a deposition material supplied to one material spray nozzle unit 300 (310a, 320a). When all of the deposition material is exhausted in the supply device (not shown) and filling of the deposition material is required, another material injection nozzle unit 300 (310b, 320b) is preheated in advance to make a state capable of immediately operating. In this state, at the same time as the operation of the preceding material injection nozzle unit 300 (310a, 320a) is stopped, the other material injection nozzle unit 300 (310b, 320b) is operated to supply the deposition material to the substrate. The deposition process can be performed. At this time, the deposition material is refilled in the deposition material supply apparatus connected to the material injection nozzle unit 300 (310a, 320a) previously operated. By using the two material injection nozzle unit 300 in this way it is possible to continuously perform the deposition process of the substrate.

Each of the material injection nozzle units 300 includes a linear nozzle 310 in which a supply passage 311 through which a deposition material is supplied is formed, and an injection hole 313 for linearly injecting the deposition material is formed; It includes a reflector 320 surrounding the side and the top of the linear nozzle (310). In this case, the linear nozzle 310 is connected to a deposition material supply device (not shown) that is separately provided outside the chamber unit 100.

The length of the linear nozzle 310 is preferably formed to have a length slightly shorter than the width of the substrate. This is because the deposition material sprayed from the linear nozzle 310 is prevented from being unnecessarily sprayed to the outside of the substrate W, thereby reducing the consumption of the deposition material. In addition, the length of the linear nozzle 310 is slightly shorter than the width of the substrate to form a portion where no deposition material is deposited at both ends of the substrate, which is unnecessary or cut during the post-treatment process. Because.

In addition, the injection hole 313 formed in the linear nozzle 310 is preferably arranged to be close to the substrate to be moved. For example, the distance between the injection hole 313 and the substrate may be 20 mm or less, and it is desirable to minimize the gap as much as possible. Accordingly, the deposition material injected from the injection hole 313 is deposited directly on the substrate to minimize the loss of the deposition material.

In addition, the linear nozzle 310 is maintained at a level of about 200 to 300 ° C. by means of moving or spraying vaporized deposition material. Accordingly, the reflector 320 is installed around the linear nozzle 310 in order to prevent the substrate 100 and the substrate from being heated by the heat diffused from the linear nozzle 310. At this time, the reflector 320 is preferably arranged to overlap a plurality of plate bodies spaced apart from each other in order to increase the thermal barrier effect. At this time, the number of the plate body may be selectively disposed according to the temperature of the linear nozzle 310 and the thermal cut-off effect of the reflector 320. For example, it is preferable to keep the temperature of the plate body disposed at the outermost portion lower than the temperature of the linear nozzle 310 and to be kept higher than about 70 ° C., which is a temperature at which the deposition material is easily deposited.

The cooling plate 400 is provided to surround the deposition section 123 of the chamber part 100, and is a means for cooling the inside of the deposition section 123. The upper portion is disposed on the upper and lower portions of the deposition section 123. And a cooling plate 413 and a lower cooling plate 423 located between the inlet section 121 and the film forming section 123 of the chamber part 100 and between the film forming section 123 and the drawing section 125. And first and second side cooling plates 433a and 433b and sidewall cooling plates 440a and 440b positioned at the front sidewall portion and the rear sidewall portion of the deposition section 123.

The upper cooling plate 413 and the lower cooling plate 423 may be attached to the upper cover 411 and the lower cover 421 mounted to the upper through hole 131 and the lower through hole 133 of the chamber part 100. It is fixed integrally by the fixing brackets (415, 425). Thus, the upper cooling plate 413 and the lower cooling plate 423 can be easily separated and installed by attaching and detaching the upper cover 411 and the lower cover 421 to the chamber part 100. In the present exemplary embodiment, one upper through hole 131 and one lower through hole 133 are formed, and the upper cover 411 and the lower cover 421 are respectively provided in correspondence thereto. Instead, a plurality of upper through holes 131 and lower through holes 133 may be formed according to the configuration and arrangement of the device, and a plurality of upper covers 411 and lower covers 421 may be provided correspondingly. . In addition, one cooling plate may be provided in a large area, such as the upper cooling plate 413 mounted on the upper cover 411, and cooled to a required portion, such as the lower cooling plate 423 mounted on the lower cover 421. A plurality of plates can be divided and provided. In the present exemplary embodiment, the lower cooling plate 423 is divided into a plurality of parts to avoid the lower cooling plate 423 being disposed at a position overlapping with the cold trap part 500. In addition, the upper cover 411 and the upper cooling plate 413 are not provided separately, and the upper cover 411 may serve as a direct cooling plate. Of course, the lower cover 421 and the lower cooling plate 423 likewise are not provided separately, respectively, and the lower cover 421 may serve as a direct cooling plate.

The first and second side cooling plates 433a and 433b are mounted on the first and second side through holes 135a and 135b of the chamber part 1. It is fixed integrally to. Therefore, the first and second side cooling plates 433a and 433b can be easily removed and installed by attaching and detaching the first and second side covers 431a and 431b to the chamber part 100. In particular, in order to easily replace and install the first and second side cooling plates 433a and 433b, the boundary of the inlet section 121 and the film forming section 123 and the film forming section 123 of the chamber part 100 and A sliding part 140 is formed on the lower side corresponding to the boundary of the lead-out section 125, and the first and second side cooling plates 433a and 433b slide on the sliding part 140, respectively. Draw in and out into the inner space of the part 100. In the present embodiment, for example, the sliding part 140 is manufactured as a rail. Of course, the operation of replacing the first and second side cooling plates 433a and 433b is not limited to the method of sliding the first and second side cooling plates 433a and 433b, but may be modified and applied in various ways. will be. The first and second side cooling plates 433a and 433b are provided with sub entrances 435a and 435b through which the substrate passes.

In addition, the side wall cooling plates 440a and 440b may be installed on the inner circumferential surfaces of the front side wall portion and the rear side wall portion of the deposition section 123, or may be installed in the front side wall portion and the rear side wall portion. At this time, the side wall cooling plates 440a and 440b are provided at the front side wall portion and the rear side wall portion of the film forming section 123, for example, the material injection nozzle unit 300, the second feed roller 220 and the cold. Various modifications may be provided in a range that does not interfere with the installation of the trap unit 300.

The cold trap unit 500 is a means for cooling and collecting the excess deposition material not deposited on the substrate among the deposition materials injected from the material injection nozzle unit 300, and the number of the material injection nozzle unit 300 is provided. It is preferable to be provided correspondingly.

The cold trap unit 500 may include: a base surface 510 disposed in an area including a lower area of an area in which the material injection nozzle unit 300 is disposed; A plurality of cooling sinks 520 mounted on the base surface 510; A cooling passage 530 formed in the cooling sink 520 through which cooling water flows; And a support cover 540 supporting at least one side of the base surface 510.

Like the first and second side cooling plates 433a and 433b, the cold trap part 500 is mounted through one side wall of the chamber part 100. Accordingly, at least one third side through hole 137a and 137b is formed in a lower region of one sidewall of the chamber 100 in which the material injection nozzle unit 300 is disposed, and the support cover 540. Is detachably disposed in the third side through holes 137a and 137b to detach the support cover 540 so that the cold trap 500 is easily separated and installed.

At this time, the plurality of cooling sinks 520 are placed in a plate shape having a substantially rectangular shape spaced apart from each other, each cooling sink 520 is the material injection nozzle unit 300, preferably in the base surface 510 Extends longer than the length of the linear nozzle 310 is entered. Therefore, it is possible to increase the collection amount of the excess deposition material generated by the injection in the material injection nozzle unit 300.

In addition, the top height of each cooling sink 520 is preferably lowered toward the cooling sink 520 disposed in the center from the cooling sink 520 disposed on both outer sides. Thus, the shape of the upper end surface of the cold trap unit 500 is approximately " U " shape, and the central portion of the cold trap unit 500 is positioned directly below the material injection nozzle unit 300, so that the cold trap unit is formed. The top surface shape of the 500 is preferably to surround the injection path of the deposition material is radially injected to the material injection nozzle unit 300. In addition, as the plurality of cooling sinks 520 are placed, the contact area between the deposition material and the cooling sink 520 may be increased to increase the collection force of the deposition material.

In addition, the cooling passage 530 provided in the cooling sink 520 is formed on the surface of the outer circumferential surface of the outer peripheral surface of the cooling sink 520 toward the center of the cold trap 500, the cooling passage 530 is deposited. Direct collection of the material into the spray path can increase the trapping power of the deposition material. Of course, the arrangement and shape of the cooling sink 520 and the arrangement of the cooling passage 530 may be variously changed to an arrangement and a shape capable of increasing the contact area with the surplus evaporation material without being limited to the exemplary embodiment. In addition, the cooling passage 530 may be internal to the cooling sink 520.

In addition, the cold trap 500 is slid and moved on the lower side of the chamber 100 in the same manner as the first and second side cooling plates 433a and 433b in order to easily install and separate the chamber 100 from the chamber 100. You can. For example, at least one sliding part 427 is formed on a lower surface of the chamber part 100 in which the cold trap part 500 is disposed, and the base surface 510 of the cold trap part 500 is formed in the cold trap part 500. Each of the slides 427 may be configured to slide. In the present embodiment, for example, the slide portion 427 is made of a rail.

An assembly and a substrate processing method of a substrate processing apparatus according to an embodiment of the present invention configured as described above will be described with reference to the drawings.

7A to 7F are operating state diagrams schematically illustrating an operating state of a substrate processing apparatus according to an embodiment of the present invention.

First, as shown in FIGS. 2 and 4, the upper cover 411 and the lower cover 421 are mounted in the upper through hole 131 and the lower through hole 133 formed in the chamber part 100, thereby providing the chamber part ( The first and second side through holes 135a and 135b formed by enclosing the upper side and the lower side of the chamber 100 and having the first and second side covers 431a and 431b and the support cover 540 in the chamber part 100. And 137a and 137b to seal the side wall of the chamber part 100 and surround the film forming section 123 of the chamber part 100 with the cooling plate part 400 and the cold trap part 500. If the inner space of the chamber part 100 is sealed in this way, the inside of the chamber part 100 is made in a high vacuum state.

When it is ready to perform the deposition process, as shown in FIG. 7A, the substrate W is introduced through the entrance 110a provided at the side of the inlet section 121 of the chamber part 100. In this case, the substrate W may be cooled in advance in a separate cooling apparatus before being introduced into the chamber 100 to improve deposition efficiency of the deposition material.

The substrate W entering the inlet section 121 of the chamber part 100 through the entrance 110a is seated on an upper portion of the first roller 210 and formed by the driving of the first roller 210. 123). At this time, the substrate W is moved by contact with the first roller 210 without a separate carrier. In addition, since the coolant flows into the first roller 210 to maintain the cooled state of the first roller 210, the substrate W may be brought into contact with the first roller 210 only by contacting the substrate W. Can be cooled. Since the substrate W is moved alone without a separate carrier for supporting the substrate W, the substrate transfer part 200 can be configured in a simple structure without having to provide a separate device for moving the carrier. There is an advantage that the driving means for driving the 200 can transfer the substrate (W) even with a small output. Of course, the transfer of the substrate W may be moved by the substrate transfer unit 200 alone, but the carrier may be transferred in a state in which the substrate W is fixed to the carrier according to the substrate W state.

The substrate W, which is moved from the inlet section 121 to the film forming section by the first roller 210, enters the film forming section 123 by passing through the auxiliary entrance 435a of the first side cooling plate 433a. At this time, any one of the material injection nozzle units 320 (310a and 320a) is first operated to spray the deposition material from the linear nozzle 310a.

As shown in FIG. 7B, the substrate W enters the film forming section 123 and passes through the lower portion of the linear nozzle 310a by the second roller 220a. It is deposited on the top surface to form a thin film layer. At this time, the excess deposition material which is not deposited on the substrate W among the deposition materials injected by the linear nozzle 310a is first contacted with the reflector 320a surrounding the periphery of the linear nozzle 310a. However, since the reflector 320a maintains a temperature at which the deposition material is not deposited, for example, 70 ° C. or more, the deposition material is not deposited and is dispersed to the surroundings. In addition, the heating water flows inside the second roller 220a so that the excess deposition material is not deposited. As a result, the excess evaporation material is mostly collected by the cold trap unit 500 which is disposed directly below the linear nozzle 310a and maintains the cooled state. More precisely, when the excess deposition material is dispersed and contacts the cooling sink 520 of the cold trap unit 500, it is deposited on the outer circumferential surface of the cooling sink 520 or the outer circumferential surface of the cooling passage 530. At this time, the excess evaporation material dispersed in the cold trap unit 500 is blocked by the progress path by the arrangement and shape of the cooling sink 520 configured in the cold trap unit 500, the cooling sink 520 and the cooling flow path ( 530 is deposited on the outer circumferential surface thereof and collected.

The substrate W on which the deposition material is deposited on the upper surface while passing through the lower portion of the linear nozzle 310 is continuously moved by the second roller 220b as shown in FIG. 7C to the second side cooling plate 433b. Passed through the formed auxiliary entrance (435b) to the withdrawal section 125, and continues to be moved by the third roller 230 is drawn out of the chamber portion 100.

In the above, in order to describe the substrate deposition process and the operation of the substrate processing apparatus in detail, a single substrate W has been described. However, the present invention is not limited thereto, and a plurality of substrates W are continuously provided through the substrate transfer unit 200. It is supplied to the inlet section 121 of the chamber portion 100 is moved to the deposition section 123 and the withdrawal section 125.

As the continuous deposition process proceeds, the other material spray nozzle portions 300 (310b and 320b) are preheated when the deposition material supplied to the material spray nozzle portions 300 (310a and 320a), which has been operated beforehand, is exhausted. As a result, a continuous deposition process is performed in the same chamber unit 100. When all of the deposition material of the material injection nozzle unit 300 (310a, 320a) that has been operated beforehand as shown in FIG. 7D is exhausted, the deposition material is sprayed through the other material injection nozzle unit 300 (310b, 320b). Let's do it. Subsequently, the substrate W simply passes through the material spray nozzle portions 300 (310a and 320a) previously operated as shown in FIG. The deposition process proceeds while passing through the lower part. At this time, the excess deposition material is similarly collected in the cold trap unit 500.

The substrate W on which deposition of the deposition material is completed is withdrawn to the withdrawal section 125 and then withdrawn to the outside of the chamber portion 100 as shown in FIG. 7F.

As described above, the deposition process may be continuously performed in the same chamber unit 100 while alternately operating the material injection nozzle units 300.

In addition, when there is a lot of surplus evaporation material collected in the cold trap unit 500, when the cold trap unit 500 needs to be replaced, the deposition process is stopped and the inside of the chamber unit 100 is switched to an atmospheric state. Then, the support cover 540 mounted on the side wall of the chamber part 100 is removed to separate the cold trap part 500 from the chamber part 100, and then a new cold trap part is mounted on the chamber part 100. As such, the cold trap unit 500 may be replaced by a simple operation without disassembling the substrate processing apparatus, thereby reducing the downtime of the apparatus due to the maintenance of the apparatus.

Although the invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the invention is not limited thereto, but is defined by the claims that follow. Accordingly, one of ordinary skill in the art may variously modify and modify the present invention without departing from the spirit of the following claims.

1 is a cross-sectional conceptual view schematically showing a substrate processing apparatus according to an embodiment of the present invention;

2 is a cross-sectional conceptual view schematically illustrating a main part detachment and detachment of a substrate processing apparatus according to an embodiment of the present invention;

3 is a longitudinal cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention;

4 is a longitudinal cross-sectional view schematically illustrating a main part detachment and detachment of a substrate processing apparatus according to an embodiment of the present invention;

5A and 5B are views illustrating a material spray nozzle part of a substrate processing apparatus according to an embodiment of the present invention.

6A and 6B are views illustrating a cold trap unit of a substrate processing apparatus according to an embodiment of the present invention.

7A to 7F are operating state diagrams schematically illustrating an operating state of a substrate processing apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: chamber portion 200: substrate transfer portion

300: material injection nozzle 400: cooling plate

500: cold trap

Claims (20)

A chamber unit having an internal space divided in order of an inlet section through which the substrate is inserted and moved, a deposition section in which a deposition process is performed on the substrate, and a drawout section in which the substrate having been deposited is drawn out; At least one material injection nozzle unit for injecting deposition material onto a substrate that is positioned and moved in the deposition section of the chamber; And a cooling plate positioned to surround the deposition section of the chamber and to cool only the inside of the deposition section. The method according to claim 1, Upper and lower through-holes are formed in the upper and lower surfaces of the chamber portion forming section, respectively. An upper cover and a lower cover are provided in the upper through hole and the lower through hole, respectively, to be detachable. And the cooling plate unit includes an upper cooling plate and a lower cooling plate which are integrally provided with at least the upper cover and the lower cover, respectively. The method according to claim 1, And the cooling plate part includes first and second side cooling plates positioned between an introduction section and a deposition section of the chamber, and between the deposition section and the drawing section. The method of claim 3, First and second side through-holes are formed in one side wall of the chamber part corresponding to the boundary between the inlet section and the deposition section of the chamber section and the boundary section between the deposition section and the drawing section section. First and second side covers are provided in the first and second side through holes, respectively, to be detachable. And the first and second side cooling plates are integrally provided in the first and second side covers, respectively. The method according to claim 4, Slide parts are formed on the lower side corresponding to the boundary between the inlet section and the deposition section of the chamber and the boundary section between the deposition section and the drawing section, respectively. And the first and second side cooling plates are respectively slid on the slide part to draw in and out of the inner space of the chamber part. The method according to claim 1, And at least one cold trap unit positioned below the material spray nozzle unit to collect excess deposition material not deposited on the substrate among deposition materials sprayed from the material spray nozzle unit. A chamber unit having an inner space divided into a pulling-in section, a film forming section, and a drawing-out section; At least one material injection nozzle unit for injecting deposition material onto a substrate that is positioned and moved in the deposition section of the chamber; At least one cold trap unit positioned below the material injection nozzle unit to collect excess deposition material not deposited on a substrate among deposition materials sprayed from the material injection nozzle unit, The cold trap part A base surface disposed in an area including a lower area of an area in which the material injection nozzle portion is disposed; A plurality of cooling sinks installed in the base surface; A cooling passage formed in the cooling sink and through which cooling water flows; And a support cover for supporting at least one side of the base surface. delete The method of claim 7, At least one third side through hole is formed in a lower region of an area in which the material injection nozzle part is disposed among one sidewall of the chamber part, And the support cover is detachably disposed in the third side through hole so that the cold trap part is integrally replaced when the support cover is detached. The method of claim 7, The plurality of cooling sinks are spaced apart from each other, Each cooling sink extends longer than the length of the material injection nozzle portion in the base surface, A substrate processing apparatus of which the top height of each cooling sink is sequentially lowered from the cooling sinks disposed at both outer sides to the cooling sinks disposed at the center. The method of claim 7, And the cooling passage is formed on a surface of the outer circumferential surface of the cooling sink toward the center of the cooling trap portion. The method of claim 7, At least one sliding part is formed on a lower side of the chamber part in which the cold trap part is disposed, And a base surface of the cold trap part slides on the slide part to draw in and out of the inner space of the chamber part. The method of claim 7, And a cooling plate positioned to surround the deposition section of the chamber to cool the inside of the deposition section. The method according to claim 1 or 7, And a substrate transfer part positioned in the inner space of the chamber to move the substrate in the order of the drawing section, the film forming section, and the drawing section. The method of claim 14, wherein the substrate transfer unit A plurality of first rollers provided in the inlet section of the chamber part; At least two or more second rollers provided in the deposition section of the chamber portion; At least two or more third rollers provided in the withdrawal section of the chamber, Cooling medium is supplied and cooled inside the first roller, And a cooling medium and a heating medium are selectively supplied and cooled or heated in the second roller. The method according to claim 1 or 7, wherein the material injection nozzle portion A linear nozzle in which a supply flow path through which the deposition material is supplied is formed and sprays the deposition material; And a reflector surrounding sides and top of the linear nozzle. 18. The method of claim 16, The reflector is disposed so that a plurality of plate bodies are spaced apart from each other overlap. Cooling the film forming section in which the deposition process is performed in the internal space of the chamber part; Introducing a substrate into the film forming section; Spraying a deposition material onto the substrate to form a thin film layer; Collecting excess deposition material not deposited on the substrate among the sprayed deposition materials into a cold trap portion; Extracting the substrate from the film forming section; Replacing the cold trap unit; Before the step of introducing the substrate into the deposition section, And precooling the substrate. delete 19. The method of claim 18, Forming a thin film layer on the substrate, And at least two or more material spray nozzles provided in the film forming section are alternately operated to continuously spray the deposition material.

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