JP5447337B2 - Silicon structure manufacturing method and semiconductor device - Google Patents

Description

  The present invention particularly relates to a method for producing a silicone structure in which a cured film of a thermally conductive silicone composition is formed on the surface of a base material on which a noble metal layer such as gold is formed, and a semiconductor device obtained thereby About.

  As a heat conductive silicone resin interposed between a semiconductor element such as a CPU or graphic and a heat radiating member such as a heat spreader, a resin composition that is cured and interposed is generally used. This is because if a heat-dissipating grease or the like that is not cured is interposed, the grease protrudes due to thermal shock or the like, and the heat-dissipating performance is significantly reduced. In general, an addition reaction is often used as a curing method for curing. The reason is that the curing time by heat is short and the hardness after curing is easy to control.

  However, the surface of the semiconductor element is often metallic silicon, but gold may be deposited on the metallic silicon surface. On the gold surface, the addition reaction does not proceed easily and it is very difficult to control the hardness. For this reason, there is a technique for treating a primer on the gold surface as disclosed in Japanese Patent Application Laid-Open No. 2008-106185 (Patent Document 1), but the steps of applying the primer and further drying are very troublesome and uneconomical. . In the method described in Japanese Patent Application Laid-Open No. 2009-256428 (Patent Document 2), a specific cross-linking agent can be used to cure by an addition reaction even on a gold surface, but it is used for a substrate on which gold is not deposited. It becomes extremely hard. On the side to be used, it is necessary to use different heat-dissipating materials depending on whether gold is deposited or not, and there is a need for a heat-conducting silicone composition that is easier to use.

JP 2008-106185 A JP 2009-256428 A

  The present invention has been made in view of the above circumstances, and it is easy to cure a thermally conductive silicone composition on a surface that has conventionally been difficult to cure, particularly on a substrate surface having a noble metal layer such as gold. An object of the present invention is to provide a method for producing a silicone structure that can be manufactured and a semiconductor device obtained by this method.

  As a result of diligent studies to achieve the above object, the present inventors have found that a curing agent used for curing and laminating a thermally conductive silicone composition on a substrate surface having a noble metal layer such as gold on the surface. It has been found that a cured product of a thermally conductive silicone composition can be easily formed by using a thermally conductive silicone composition containing a peroxide having a 10-hour half-life temperature in the range of 80 ° C. or higher and lower than 130 ° C. The present invention has been made.

Accordingly, the present invention provides the following method for producing a silicone structure and semiconductor device.
Claim 1:
In a method for producing a silicone structure formed by forming a cured film of a thermally conductive silicone composition on the surface of a substrate having a noble metal layer on at least the surface, the curing agent for the thermally conductive silicone composition is reduced by half for 10 hours. A method for producing a silicone structure, wherein a peroxide having an initial temperature of 80 ° C. or higher and lower than 130 ° C. is used.
Claim 2:
In the method for producing a silicone structure in which a cured film of a thermally conductive silicone composition is interposed between the surface of a substrate having a noble metal layer on the surface and a heat radiating member, curing of the thermally conductive silicone composition A method for producing a silicone structure, wherein a peroxide having a 10-hour half-life temperature of 80 ° C. or higher and lower than 130 ° C. is used as an agent.
Claim 3:
The thermally conductive silicone composition is
Component (A): organopolysiloxane emissions having at least one alkenyl group bonded to a silicon atom in the molecule,
(B) component: thermally conductive filler,
Component (C): Peroxide having a 10-hour half-life temperature of 80 ° C. or higher and lower than 130 ° C .; 0.05 to 0.5% by mass of the entire composition
The manufacturing method of Claim 1 or 2 which contains.
Claim 4:
The thermally conductive silicone composition is
Furthermore, (D) component: The manufacturing method of Claim 3 containing the organohydrogen polysiloxane which has at least two hydrogen atoms couple | bonded with the silicon atom in 1 molecule.
Claim 5:
The thermally conductive silicone composition is
Further, the following formula (1)
R ¹ _a R ² _b Si (OR ³ ) _4-ab (1)
(Wherein R ¹ is independently an alkyl group having 9 to 15 carbon atoms, R ² is independently an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and R ³ is independently carbon. An alkyl group of 1 to 6, a is an integer of 1 to 3, b is an integer of 0 to 2, provided that a + b is an integer of 1 to 3)
Organosilane represented by
The manufacturing method of Claim 3 or 4 containing this.
Claim 6:
The thickness of the cured film of the heat conductive silicone composition, method of any one of claims 1 to 5 is 20 to 500 [mu] m.
Claim 7:
The substrate The method of any one of claims 1 to 6 which is a metal silicon having a vapor deposited layer of gold on the surface.
Claim 8:
A cured film of a thermally conductive silicone composition comprising a peroxide having a 10-hour half-life temperature of 80 ° C. or more and less than 130 ° C. as a curing agent between the surface of the substrate having a noble metal layer on the surface and the heat radiating member. A semiconductor device characterized by being interposed.

  According to the present invention, it is easy to cure a thermally conductive silicone composition on a substrate having a noble metal layer such as gold on a surface that has been difficult to cure.

It is a longitudinal cross-sectional view which shows one Embodiment of the semiconductor device of this invention. It is explanatory drawing which shows the production method of a test piece, and the measuring method of adhesive force.

  The method for producing a silicone structure of the present invention includes a thermally conductive silicone containing a peroxide having a 10-hour half-life temperature of 80 ° C. or more and less than 130 ° C. as a curing agent on at least the surface of a substrate having a noble metal layer on the surface. A cured film of the composition is formed.

Here, the thermally conductive silicone composition used in the present invention is:
(A) Component: Organopolysiloxane having at least one alkenyl group bonded to a silicon atom in one molecule (B) Component: Thermally conductive filler (C) Component: 10 hour half-life temperature of 80 ° C. or higher and 130 ° C. Less than the peroxide is an essential component.

[(A) component]
The component (A) is an organopolysiloxane having at least one, particularly 1 to 5, alkenyl groups bonded to silicon atoms, and the molecular structure thereof may be linear, branched or network-like. However, it is preferable from an economical viewpoint that it is linear.

In addition, the component (A) has a high volatility when the viscosity at 25 ° C. is less than 10 mm ² / s, and the composition may not be stable. When the viscosity is greater than 100,000 mm ² / s, the viscosity of the composition increases. , there are cases in which handling is difficult, is preferably in the range of 10~100,000mm ² / s, more preferably 100~50,000mm ² / s. This viscosity is a kinematic viscosity and is a value measured at 25 ° C. by an Ostwald viscometer (the same applies hereinafter).

  (A) As an alkenyl group couple | bonded with the silicon atom of a component, a C2-C8 thing is preferable, A vinyl group, an allyl group, a butenyl group, a hexenyl group etc. are mentioned, Preferably it is a vinyl group. The alkenyl group bonded to the silicon atom may be present at any position in the molecule, but is desirably present at least at the molecular chain end.

  As the organic group other than the alkenyl group bonded to the silicon atom of the component (A), one having 1 to 10 carbon atoms, for example, an alkyl group such as methyl group, ethyl group, propyl group, butyl group, cyclopentyl group, cyclohexyl group, etc. Aryl groups such as cycloalkyl groups, phenyl groups and xylyl groups, aralkyl groups such as phenylethyl groups and phenylpropyl groups, alkyl halide groups such as γ-chloropropyl groups and 3,3,3-trifluoropropyl groups, etc. Is exemplified.

  Examples of the molecular chain terminal group of the component (A) include triorganosiloxy groups such as trimethylsiloxy group, dimethylvinylsiloxy group, dimethylphenylsiloxy group, and methylvinylphenylsiloxy group, hydroxyl groups, and alkoxy groups.

  (A) The kind of organic group in a component, the kind of molecular chain terminal blocking group, a viscosity, etc. can be suitably selected according to the intended purpose of the heat conductive silicone composition obtained. Moreover, you may use several types of (A) component from which a viscosity and a structure differ.

[Component (B)]
The thermally conductive filler of component (B) is for imparting thermal conductivity to the thermally conductive silicone composition. For example, aluminum powder, silver powder, copper powder, nickel powder, zinc oxide powder, alumina powder, magnesium oxide powder, aluminum nitride powder, boron nitride powder, silicon nitride powder, diamond powder, graphite powder, zinc powder, stainless steel powder, and It is selected from a combination of two or more of these.

  The average particle size of these thermally conductive fillers is usually in the range of 0.1 to 50 μm, preferably 1 to 20 μm. If it is too small, the viscosity of the composition may be too high and the progress may be poor, and if it is too large, the resulting composition may be non-uniform. This average particle size is a volume-based average particle size that can be determined by a laser diffraction / scattering method. Moreover, the shape of these heat conductive fillers may be either spherical or indefinite.

  When the amount of the thermally conductive filler added is less than 50% by mass in the thermally conductive silicone composition, a desired thermal conductivity cannot be obtained, and when it is more than 98% by mass, the thermally conductive silicone composition obtained can be obtained. 50 to 98 mass% is preferable because the viscosity of the resin becomes high and handling becomes worse.

[Component (C)]
When the peroxide used in the present invention has a 10-hour half-life temperature lower than 80 ° C., the reaction becomes too fast, the handling becomes worse from the viewpoint of pot life, and if it is 130 ° C. or higher, a high temperature is not applied. Since the reaction does not proceed sufficiently, the usability is deteriorated.

  Examples of the peroxide include ketone peroxide, hydroperoxide, diacyl peroxide, dialkyl peroxide, peroxyketal, alkyl perester, and percarbonate. These can use a commercial item, for example, perbutyl C, perbutyl I, perhexa C (brand name; all are made by NOF Corporation) etc. can be illustrated.

  If the peroxide content is less than 0.05% by mass of the entire thermally conductive silicone composition, the reaction does not proceed easily, and if it exceeds 0.5% by mass, the effect is not changed and it is uneconomical. A range of ˜0.5 mass% is good. More preferably, it is 0.1-0.3 mass%.

[(D) component]
From the viewpoint of adhesion, the composition of the present invention is further mixed with an organohydrogenpolysiloxane having at least two hydrogen atoms (SiH groups) bonded to silicon atoms, particularly 3 to 30 in one molecule. You may do it.

The molecular structure of the organohydrogenpolysiloxane as component (D) may be linear, branched or network-like, and preferably has a viscosity at 25 ° C. of 1 to 10,000 mm ² / s, more preferably. 5 to 100 mm ² / s. Moreover, you may use several types of (D) components from which a viscosity differs.

  As the organic group other than the hydrogen atom bonded to the silicon atom of the component (D), those having 1 to 10 carbon atoms excluding the alkenyl group, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, and a butyl group, a phenyl group And aryl groups such as tolyl group, aralkyl groups such as phenylethyl group and phenylpropyl group, and halogenated alkyl groups such as γ-chloropropyl group and 3,3,3-trifluoropropyl group.

  (D) When using a component, the compounding quantity is 1-50 mass parts with respect to 100 mass parts of (A) component, especially 2-30 mass parts.

Further, the composition of the present invention may further contain an organosilane represented by the following formula (1) as a wettability improver for the component (A) of the component (B) as necessary. .
R ¹ _a R ² _b Si (OR ³ ) _4-ab (1)
(Wherein R ¹ is independently an alkyl group having 9 to 15 carbon atoms, R ² is independently an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and R ³ is independently carbon. An alkyl group of 1 to 6, a is an integer of 1 to 3, b is an integer of 0 to 2, provided that a + b is an integer of 1 to 3)

R ¹ is independently an alkyl group having 9 to 15 carbon atoms, and specific examples thereof include a nonyl group, a decyl group, a dodecyl group, a tetradecyl group, a pentadecyl group, and the like.

R ² is independently an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, particularly 1 to 8 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, Alkyl groups such as hexyl group and octyl group; cycloalkyl groups such as cyclopentyl group and cyclohexyl group; alkenyl groups such as vinyl group and allyl group; aryl groups such as phenyl group and tolyl group; 2-phenylethyl group and 2-methyl Aralkyl groups such as 2-phenylethyl group; halogens such as 3,3,3-trifluoropropyl group, 2- (nonafluorobutyl) ethyl group, 2- (heptadecafluorooctyl) ethyl group, p-chlorophenyl group Examples thereof include a substituted hydrocarbon group, and a methyl group and an ethyl group are particularly preferable.

R ³ is independently an alkyl group having 1 to 6 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and the like. Groups are preferred.

  a is usually an integer of 1 to 3, but is particularly preferably 1. b is an integer of 0-2. However, a + b is an integer of 1-3.

As a specific example of the organosilane represented by the above formula (1),
C ₁₀ H ₂₁ Si (OCH ₃ ) ₃ ,
C ₁₂ H ₂₅ Si (OCH ₃ ) ₃ ,
C ₁₂ H ₂₅ Si (OC ₂ H ₅ ) ₃ ,
C ₁₀ H ₂₁ Si (CH ₃ ) (OCH ₃ ) ₂ ,
C ₁₀ H ₂₁ Si (C ₆ H ₅ ) (OCH ₃ ) ₂ ,
C ₁₀ H ₂₁ Si (CH ₃ ) (OC ₂ H ₅ ) ₂ ,
C ₁₀ H ₂₁ Si (CH═CH ₂ ) (OCH ₃ ) ₂ ,
C ₁₀ H ₂₁ Si (CH ₂ CH ₂ CF ₃ ) (OCH ₃ ) ₂
Etc.

  When this organosilane is used, the blending amount is preferably 0 to 20 parts by mass, particularly 0.01 to 10 parts by mass with respect to 100 parts by mass of the component (A).

The heat conductive silicone composition of the present invention can be prepared by mixing the above components (A) to (C) and, if necessary, the component (D), other additives and the like by a conventional method.
When the absolute viscosity at 25 ° C. measured by a rotational viscometer before curing of the thermally conductive silicone composition of the present invention is lower than 10 Pa · s, the thermally conductive filler of component (B) tends to settle. However, if it is higher than 1,000 Pa · s, it is too hard and the filling property into a container or the like is deteriorated, so it is in the range of 10 to 1,000 Pa · s, preferably in the range of 50 to 500 Pa · s.

  In the present invention, a cured film of the thermally conductive silicone composition of the present invention can be interposed between the surface of a base material having a noble metal layer such as gold on the surface and a heat radiating member such as a heat spreader. If the thickness is less than 20 μm (after curing), the structure may not be able to follow the warp of the structure due to thermal shock or the like, and if it is greater than 500 μm, the heat resistance may increase and the heat dissipation performance may be poor. A range of ˜500 μm is preferred. More preferably, a thickness of 20 to 100 μm is good.

  As a curing method, peroxide is generally susceptible to oxygen inhibition, so it is desirable to carry out in an inert gas atmosphere such as nitrogen or argon. However, the heat conduction of the present invention is preferably performed between the substrate and a heat spreader. When an adhesive silicone composition is interposed, the inside is not substantially affected. Accordingly, curing in the air may be used. Although the curing temperature and time depend on the size of the structure and the like, if the temperature is lower than 120 ° C., the progress of the reaction may be slow. If the temperature is higher than 200 ° C., the thermal conductive silicone composition itself has an adverse effect such as deterioration. Since it may come out, the range of 120 to 200 ° C., preferably 130 to 180 ° C. is good, and is preferably 5 to 240 minutes, particularly preferably 10 to 120 minutes.

  The thermally conductive silicone structure of the present invention is obtained by laminating a cured product (thermally conductive silicone) of the above thermally conductive silicone composition on at least the surface of a base material on which a noble metal layer such as gold is formed. In this case, the heat conductive silicone composition is disposed on the surface of the base material and heated.

  Here, examples of the substrate include semiconductor elements such as a semiconductor chip of a semiconductor device and a heat radiator that conducts heat from the semiconductor chip, and thus the structure of the present invention can be configured as a semiconductor device. In this case, the base material may be a metal or non-metal, but silicon is preferable, and those in which a noble metal layer such as gold is formed on at least the surface of the base material are effective in the present invention. However, the present invention is not limited to this. In addition, as a method of forming a noble metal layer such as gold on the surface, it can be formed by, for example, a vapor phase plating method such as vapor deposition or sputtering, electroplating, electroless plating, or the like.

  A cured product of the heat conductive silicone composition can be laminated on the base material by applying the above-described heat conductive silicone composition to the surface of the base material and heating and curing the composition.

  FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor device obtained by curing the thermally conductive silicone composition of the present invention. In the figure, 1 is a semiconductor element (gold) having gold deposited on its surface. Deposited metal silicon). A thermally conductive silicone composition film 2 is formed on the gold vapor deposition surface of the semiconductor element 1. The thermally conductive silicone composition film 2 is interposed between the semiconductor element 1 and the heat spreader (heat radiator) 3 and is pressed by the heat spreader. Heat conductive silicone composition 2 is cured by heating under the above heating conditions, thereby completing semiconductor device 10. In the figure, 4 is a substrate, 5 is solder, and 6 is an underfill agent.

  EXAMPLES Hereinafter, although a preparation example, an Example, and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.

First, the following composition and substrate were prepared.
[Preparation Example 1]
<Thermal conductive silicone composition A>
Both ends are blocked with dimethylvinylsilyl groups, 100 g of dimethylpolysiloxane having a viscosity of 600 mm ² / s at 25 ° C., 800 g of aluminum powder having an average particle size of 4.9 μm and 200 g of zinc oxide powder having an average particle size of 1.0 μm Further, 6 g of C ₁₀ H ₂₁ Si (OCH ₃ ) ₃ which is a coupling agent and 11.7 g of Si-H group-containing organopolysiloxane of the following formula (2) were added, and the mixture was 70 by a 5 liter planetary mixer. Stirring was carried out at 1 ° C. for 1 hour. Then, it cooled to room temperature and 2.2g (10-hour half-life temperature: 90.7 degreeC, about 0.2 mass% in a heat conductive silicone composition) the brand name Perhexa C by Nippon Oil & Fats Co., Ltd. as a peroxide. And the mixture was stirred and mixed at room temperature for 15 minutes to obtain a thermally conductive silicone composition A.

[Preparation Example 2]
<Thermal conductive silicone composition B>
Except that the peroxide used was changed to the trade name Perbutyl I manufactured by Nippon Oil & Fats Co., Ltd. (10-hour half-life temperature: 98.7 ° C.), all production was performed in the same manner as in Preparation Example 1, and the heat conductive silicone composition Product B was obtained.

[Preparation Example 3]
<Thermal conductive silicone composition C>
Except that the peroxide used was changed to the trade name Perbutyl C (10-hour half-life temperature: 119.5 ° C.) manufactured by NOF Corporation, the production was carried out in the same manner as in Preparation Example 1, and the thermally conductive silicone composition Product C was obtained.

[Preparation Example 4]
<Thermal conductive silicone composition D>
Production was performed in the same manner as in Preparation Example 1 except that the amount of peroxide added was 1.1 g (an amount corresponding to about 0.1% by mass in the thermally conductive silicone composition). The thermally conductive silicone composition D was obtained.

[Preparation Example 5]
<Thermal conductive silicone composition E>
Production was conducted in the same manner as in Preparation Example 1, except that the peroxide used was changed to the product name Park Mill P (10-hour half-life temperature; 145.1 ° C.) manufactured by Nippon Oil & Fats Co., Ltd. Product E was obtained.

[Preparation Example 6]
<Thermal conductive silicone composition F>
Both ends are blocked with dimethylvinylsilyl groups, 100 g of dimethylpolysiloxane having a viscosity of 600 mm ² / s at 25 ° C., 800 g of aluminum powder having an average particle size of 4.9 μm and 200 g of zinc oxide powder having an average particle size of 1.0 μm Further, 6 g of C ₁₀ H ₂₁ Si (OCH ₃ ) ₃ as a coupling agent was added, and the mixture was heated and stirred at 70 ° C. for 1 hour with a 5-liter planetary mixer. After cooling, 0.45 g of a 50% by weight toluene solution of 1-ethynyl-1-cyclohexanol was added, and 0.2 g of a 0.5% by weight toluene solution of a platinum-vinylsiloxane complex was added. 11.7 g of H group-containing organopolysiloxane was sequentially added with stirring to obtain thermally conductive silicone composition F (thermally conductive silicone composition F does not contain peroxide).

<Silicon wafer>
A silicon wafer A was prepared by depositing gold on one side of a 10 mm square silicon wafer. It was 0.15 micrometer when the film thickness of the gold | metal vapor deposited with the stylus type surface shape measuring device made from ULVAC was measured.
<Nickel plate>
A nickel plate having a nickel coating on a 25 mm × 100 mm iron surface was prepared (manufactured by Test Piece Co., Ltd.).

The measurement of adhesive force and thickness was performed by the following method.
[Adhesive strength measurement method]
As shown in FIG. 2, a nickel plate 21 (manufactured by Test Piece Co., Ltd.) having a 25 mm × 100 mm iron surface coated with nickel is prepared, and between the nickel plate 21 and a silicon wafer 23 on which a gold thin film is formed. The gold thin film side was sandwiched so as to be in contact with the heat conductive silicone composition 22. The laminates 21, 22, and 23 were placed in an oven, and the heat conductive silicone composition 22 was heated and cured at the following temperature and time to prepare a test piece. A load was applied from the lateral direction of the silicon wafer 23 with the probe 24, the breaking load was measured, and this value was taken as the adhesive strength. As an adhesive strength measuring machine, Reska Co., Ltd. bonding tester PTR-1000 was used. In addition, the test result described the average value of the result performed 3 times. It can be judged whether the heat conductive silicone composition was hardened by measuring adhesive force. 20N or more was regarded as an acceptable product. If it is not cured, the adhesion is very low (about 10 N or less).

[Measurement of thickness after curing of thermally conductive silicone composition]
The thickness of silicon wafer A and nickel plate was measured in advance with a micro gauge (model number: MDE-25MJ) manufactured by Mitutoyo Corporation. After curing the heat conductive silicone composition, the total thickness was measured to conduct heat. The thickness of the conductive silicone composition was calculated.

[Example 1]
The thermally conductive silicone composition A was sandwiched between the gold deposition surface of the silicon wafer A and the nickel plate, and left in an oven at 150 ° C. for 60 minutes to cure the thermally conductive silicone composition A. It was 25 micrometers when the thickness of the heat conductive silicone composition was measured. When the adhesive strength after curing was measured, the adhesive strength was 43N.

[Example 2]
Except that the heat conductive silicone composition A was changed to the heat conductive silicone composition B, the adhesive strength after curing was measured in the same manner as in Example 1 and found to be 39N. At this time, it was 33 micrometers when the thickness of the heat conductive silicone composition was measured.

[Example 3]
Except that the thermally conductive silicone composition A was changed to the thermally conductive silicone composition C, the adhesive strength after curing was measured in the same manner as in Example 1 and found to be 35N. At this time, it was 36 micrometers when the thickness of the heat conductive silicone composition was measured.

[Example 4]
Except that the thermally conductive silicone composition A was changed to the thermally conductive silicone composition D, the adhesive strength after curing was measured in the same manner as in Example 1 and found to be 32N. At this time, it was 32 micrometers when the thickness of the heat conductive silicone composition was measured.

[Comparative Example 1]
Except that the thermally conductive silicone composition A was changed to the thermally conductive silicone composition E, the adhesive strength after curing was measured in the same manner as in Example 1 and found to be 9N. At this time, it was 31 micrometers when the thickness of the heat conductive silicone composition was measured.

[Comparative Example 2]
Except that the thermally conductive silicone composition A was changed to the thermally conductive silicone composition F, the adhesive strength after curing was measured in the same manner as in Example 1 and found to be 5N. At this time, it was 29 micrometers when the thickness of the heat conductive silicone composition was measured.

DESCRIPTION OF SYMBOLS 1 Semiconductor element with gold deposited on surface 2 Thermally conductive silicone composition film 3 Heat spreader 4 Substrate 5 Solder 6 Underfill agent 10 Semiconductor device 21 Nickel plate 22 Thermally conductive silicone composition 23 Silicon wafer 24 Probe

Claims (8)

  In a method for producing a silicone structure formed by forming a cured film of a thermally conductive silicone composition on the surface of a substrate having a noble metal layer on at least the surface, the curing agent for the thermally conductive silicone composition is reduced by half for 10 hours. A method for producing a silicone structure, wherein a peroxide having an initial temperature of 80 ° C. or higher and lower than 130 ° C. is used.   In the method for producing a silicone structure in which a cured film of a thermally conductive silicone composition is interposed between the surface of a substrate having a noble metal layer on the surface and a heat radiating member, curing of the thermally conductive silicone composition A method for producing a silicone structure, wherein a peroxide having a 10-hour half-life temperature of 80 ° C. or higher and lower than 130 ° C. is used as an agent. The thermally conductive silicone composition is
Component (A): organopolysiloxane emissions having at least one alkenyl group bonded to a silicon atom in the molecule,
(B) component: thermally conductive filler,
Component (C): Peroxide having a 10-hour half-life temperature of 80 ° C. or higher and lower than 130 ° C .; 0.05 to 0.5% by mass of the entire composition
The manufacturing method of Claim 1 or 2 which contains. The thermally conductive silicone composition is
Furthermore, (D) component: The manufacturing method of Claim 3 containing the organohydrogen polysiloxane which has at least two hydrogen atoms couple | bonded with the silicon atom in 1 molecule. The thermally conductive silicone composition is
Further, the following formula (1)
R ¹ _a R ² _b Si (OR ^Three ) _4-a-b                       (1)
(Wherein R ¹ Is independently an alkyl group having 9 to 15 carbon atoms, R ² Is independently an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, R ^Three Is independently an alkyl group having 1 to 6 carbon atoms, a is an integer of 1 to 3, b is an integer of 0 to 2, provided that a + b is an integer of 1 to 3. )
Organosilane represented by
The manufacturing method of Claim 3 or 4 containing this. The thickness of the cured film of the heat conductive silicone composition, method of any one of claims 1 to 5 is 20 to 500 [mu] m. The substrate The method of any one of claims 1 to 6 which is a metal silicon having a vapor deposited layer of gold on the surface.   A cured film of a thermally conductive silicone composition comprising a peroxide having a 10-hour half-life temperature of 80 ° C. or more and less than 130 ° C. as a curing agent between the surface of the substrate having a noble metal layer on the surface and the heat radiating member. A semiconductor device characterized by being interposed.

Images