JP5431736B2 - インジウム錫酸化物表面をｃｍｐする方法 - Google Patents

インジウム錫酸化物表面をｃｍｐする方法 Download PDF

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Publication number
JP5431736B2
JP5431736B2 JP2008554444A JP2008554444A JP5431736B2 JP 5431736 B2 JP5431736 B2 JP 5431736B2 JP 2008554444 A JP2008554444 A JP 2008554444A JP 2008554444 A JP2008554444 A JP 2008554444A JP 5431736 B2 JP5431736 B2 JP 5431736B2
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JP
Japan
Prior art keywords
ito
polishing
cmp
composition
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008554444A
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English (en)
Japanese (ja)
Other versions
JP2009526659A5 (OSRAM
JP2009526659A (ja
Inventor
カーター，フィリップ
ナギーブ，ネビン
サン，フレッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009526659A publication Critical patent/JP2009526659A/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008554444A 2006-02-14 2007-02-14 インジウム錫酸化物表面をｃｍｐする方法 Expired - Fee Related JP5431736B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US77310506P 2006-02-14 2006-02-14
US60/773,105 2006-02-14
US83023406P 2006-07-12 2006-07-12
US60/830,234 2006-07-12
PCT/US2007/003978 WO2007095322A1 (en) 2006-02-14 2007-02-14 Compositions and methods for cmp of indium tin oxide surfaces

Publications (3)

Publication Number Publication Date
JP2009526659A JP2009526659A (ja) 2009-07-23
JP2009526659A5 JP2009526659A5 (OSRAM) 2010-03-18
JP5431736B2 true JP5431736B2 (ja) 2014-03-05

Family

ID=38371856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008554444A Expired - Fee Related JP5431736B2 (ja) 2006-02-14 2007-02-14 インジウム錫酸化物表面をｃｍｐする方法

Country Status (7)

Country Link
US (1) US20070190789A1 (OSRAM)
JP (1) JP5431736B2 (OSRAM)
KR (1) KR101333866B1 (OSRAM)
CN (1) CN101370898B (OSRAM)
MY (1) MY154806A (OSRAM)
TW (1) TWI341325B (OSRAM)
WO (1) WO2007095322A1 (OSRAM)

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US8367798B2 (en) * 2008-09-29 2013-02-05 The Regents Of The University Of California Active materials for photoelectric devices and devices that use the materials
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
US20100276071A1 (en) * 2009-04-29 2010-11-04 Solarmer Energy, Inc. Tandem solar cell
CN101941001B (zh) * 2009-07-03 2014-04-02 3M创新有限公司 亲水涂层、制品、涂料组合物和方法
US8440496B2 (en) * 2009-07-08 2013-05-14 Solarmer Energy, Inc. Solar cell with conductive material embedded substrate
US8372945B2 (en) 2009-07-24 2013-02-12 Solarmer Energy, Inc. Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials
US8399889B2 (en) 2009-11-09 2013-03-19 Solarmer Energy, Inc. Organic light emitting diode and organic solar cell stack
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
GB201018141D0 (en) 2010-10-27 2010-12-08 Pilkington Group Ltd Polishing coated substrates
EP3428933B1 (en) * 2011-09-30 2022-03-02 View, Inc. Improved optical device fabrication
JP6028046B2 (ja) * 2015-01-05 2016-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6282708B2 (ja) * 2016-10-07 2018-02-21 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
KR102122125B1 (ko) * 2018-06-01 2020-06-11 주식회사 케이씨텍 연마용 슬러리 조성물
SG10201904669TA (en) 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
KR102784411B1 (ko) * 2018-10-19 2025-03-21 솔브레인 주식회사 금속산화물막 연마용 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
CN119032149A (zh) 2022-04-20 2024-11-26 株式会社力森诺科 研磨剂及研磨方法
CN117511415A (zh) * 2023-11-03 2024-02-06 昂士特科技(深圳)有限公司 化学机械抛光组合物及其抛光方法

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US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6743723B2 (en) * 1995-09-14 2004-06-01 Canon Kabushiki Kaisha Method for fabricating semiconductor device
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
KR19980024900A (ko) * 1996-09-24 1998-07-06 마르타 앤 피네칸 화학적 기계적 연마용 복수 산화제 슬러리
JP3576364B2 (ja) * 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Ｉｔｏスパッタリングターゲットのクリーニング方法
CN1092697C (zh) * 1998-02-20 2002-10-16 长兴化学工业股份有限公司 用于加工半导体的化学机械研磨组合物
TW416104B (en) * 1998-08-28 2000-12-21 Kobe Steel Ltd Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate
JP2001020087A (ja) * 1999-07-05 2001-01-23 Toshiba Corp 銅の化学機械研磨用水系分散体
JP2001303027A (ja) * 2000-04-26 2001-10-31 Seimi Chem Co Ltd 研磨用組成物及び研磨方法
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
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JPWO2004090963A1 (ja) * 2003-04-03 2006-07-06 日立化成工業株式会社 研磨パッド、その製造方法およびそれを用いた研磨方法
KR100538810B1 (ko) * 2003-12-29 2005-12-23 주식회사 하이닉스반도체 반도체소자의 소자분리 방법
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
KR101333866B1 (ko) 2013-11-27
CN101370898B (zh) 2012-09-12
TWI341325B (en) 2011-05-01
US20070190789A1 (en) 2007-08-16
JP2009526659A (ja) 2009-07-23
WO2007095322A1 (en) 2007-08-23
KR20080105080A (ko) 2008-12-03
CN101370898A (zh) 2009-02-18
TW200734441A (en) 2007-09-16
MY154806A (en) 2015-07-31

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