JP5424882B2 - 放射送出装置及び該放射送出装置の製造方法 - Google Patents

放射送出装置及び該放射送出装置の製造方法 Download PDF

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Publication number
JP5424882B2
JP5424882B2 JP2009529519A JP2009529519A JP5424882B2 JP 5424882 B2 JP5424882 B2 JP 5424882B2 JP 2009529519 A JP2009529519 A JP 2009529519A JP 2009529519 A JP2009529519 A JP 2009529519A JP 5424882 B2 JP5424882 B2 JP 5424882B2
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delivery device
radiation
contact member
radiation delivery
electrode surface
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Expired - Fee Related
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JP2009529519A
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Japanese (ja)
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JP2010505248A (ja
JP2010505248A5 (enExample
Inventor
クライン マルクス
シンドラー フローリアン
スティーブン ミラード イアン
ゲク ベー ソク
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009529519A 2006-09-29 2007-09-11 放射送出装置及び該放射送出装置の製造方法 Expired - Fee Related JP5424882B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006046234.3 2006-09-29
DE102006046234 2006-09-29
DE102006055884.7 2006-11-27
DE102006055884.7A DE102006055884B4 (de) 2006-09-29 2006-11-27 Strahlungsemittierende Vorrichtung und Verfahren zu ihrer Herstellung
PCT/DE2007/001637 WO2008040288A2 (de) 2006-09-29 2007-09-11 Strahlungsemittierende vorrichtung

Publications (3)

Publication Number Publication Date
JP2010505248A JP2010505248A (ja) 2010-02-18
JP2010505248A5 JP2010505248A5 (enExample) 2011-07-07
JP5424882B2 true JP5424882B2 (ja) 2014-02-26

Family

ID=38962611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009529519A Expired - Fee Related JP5424882B2 (ja) 2006-09-29 2007-09-11 放射送出装置及び該放射送出装置の製造方法

Country Status (8)

Country Link
US (2) US8159129B2 (enExample)
EP (1) EP2067190A2 (enExample)
JP (1) JP5424882B2 (enExample)
KR (1) KR101424305B1 (enExample)
CN (1) CN101553941B (enExample)
DE (1) DE102006055884B4 (enExample)
TW (1) TWI354389B (enExample)
WO (1) WO2008040288A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US8643034B2 (en) 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008054218A1 (de) 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
EP2244316A1 (en) * 2009-04-22 2010-10-27 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO An electronic device and a method of manufacturing the same
DE102010003121A1 (de) * 2010-03-22 2011-09-22 Osram Opto Semiconductors Gmbh Organische Lichtemittierende Vorrichtung mit homogener Leuchtdichteverteilung
DE102014102255B4 (de) * 2014-02-21 2021-10-28 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zum Herstellen eines organischen lichtemittierenden Bauelements
DE102014110969A1 (de) 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Bauteil sowie Verfahren zur Herstellung eines organischen Bauteils

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612296A (ja) * 1984-06-15 1986-01-08 アルプス電気株式会社 透明電極
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP2828187B2 (ja) * 1993-04-08 1998-11-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JPH1140362A (ja) * 1997-07-15 1999-02-12 Casio Comput Co Ltd 電界発光素子及びその製造方法
GB9718393D0 (en) * 1997-08-29 1997-11-05 Cambridge Display Tech Ltd Electroluminescent Device
JP2000231985A (ja) * 1999-02-12 2000-08-22 Denso Corp 有機ｅｌ素子
TW425726B (en) 1999-10-08 2001-03-11 Epistar Corp A high-luminance light emitting diode with distributed contact layer
US6512248B1 (en) 1999-10-19 2003-01-28 Showa Denko K.K. Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp
US6656611B2 (en) * 2001-07-20 2003-12-02 Osram Opto Semiconductors Gmbh Structure-defining material for OLEDs
DE10147887C2 (de) 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt
JP2003308968A (ja) * 2002-04-12 2003-10-31 Rohm Co Ltd エレクトロルミネッセンス発光素子及びその製法
GB0218202D0 (en) * 2002-08-06 2002-09-11 Avecia Ltd Organic light emitting diodes
JP4114551B2 (ja) 2003-06-06 2008-07-09 株式会社豊田自動織機 補助電極を用いた面状発光装置
JP4400570B2 (ja) * 2003-10-02 2010-01-20 株式会社豊田自動織機 電界発光素子
KR20060064987A (ko) * 2004-12-09 2006-06-14 한국전자통신연구원 전도성 잉크와 이를 이용한 유기 반도체 트랜지스터 및 그제작 방법
JP4561490B2 (ja) * 2004-12-24 2010-10-13 株式会社豊田自動織機 エレクトロルミネッセンス素子
US20070075636A1 (en) * 2005-09-30 2007-04-05 Fuji Photo Film Co., Ltd. Organic electroluminescent element
US7498735B2 (en) * 2005-10-18 2009-03-03 Eastman Kodak Company OLED device having improved power distribution
DE102006013408A1 (de) 2006-03-17 2007-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leuchtdiodenelement
US7928537B2 (en) 2006-03-31 2011-04-19 Fujifilm Corporation Organic electroluminescent device
TWI331483B (en) * 2006-08-07 2010-10-01 Ritdisplay Corp Organic light emitting device with heat dissipation structure

Also Published As

Publication number Publication date
US8159129B2 (en) 2012-04-17
US20100007269A1 (en) 2010-01-14
DE102006055884A1 (de) 2008-04-03
CN101553941B (zh) 2012-06-20
US8749134B2 (en) 2014-06-10
JP2010505248A (ja) 2010-02-18
DE102006055884B4 (de) 2023-03-16
WO2008040288A3 (de) 2008-07-24
EP2067190A2 (de) 2009-06-10
KR20090057460A (ko) 2009-06-05
CN101553941A (zh) 2009-10-07
WO2008040288A2 (de) 2008-04-10
TW200816539A (en) 2008-04-01
TWI354389B (en) 2011-12-11
KR101424305B1 (ko) 2014-08-01
US20120176027A1 (en) 2012-07-12

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