JP5420144B2 - 基板を処理するプラズマ処理装置および電極組立体 - Google Patents

基板を処理するプラズマ処理装置および電極組立体 Download PDF

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Publication number
JP5420144B2
JP5420144B2 JP2006264246A JP2006264246A JP5420144B2 JP 5420144 B2 JP5420144 B2 JP 5420144B2 JP 2006264246 A JP2006264246 A JP 2006264246A JP 2006264246 A JP2006264246 A JP 2006264246A JP 5420144 B2 JP5420144 B2 JP 5420144B2
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JP
Japan
Prior art keywords
rails
electrode assembly
openings
electrode
rail
Prior art date
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Expired - Fee Related
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JP2006264246A
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English (en)
Japanese (ja)
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JP2007095695A (ja
JP2007095695A5 (enExample
Inventor
ヴィ． ボールデン ザ セカンド トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordson Corp
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Nordson Corp
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Publication date
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Publication of JP2007095695A5 publication Critical patent/JP2007095695A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32605—Removable or replaceable electrodes or electrode systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00—Work holders
    • Y10S269/905—Work holder for doors and door frames
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2006264246A 2005-09-28 2006-09-28 基板を処理するプラズマ処理装置および電極組立体 Expired - Fee Related JP5420144B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/239570 2005-09-28
US11/239,570 US7455735B2 (en) 2005-09-28 2005-09-28 Width adjustable substrate support for plasma processing

Publications (3)

Publication Number Publication Date
JP2007095695A JP2007095695A (ja) 2007-04-12
JP2007095695A5 JP2007095695A5 (enExample) 2009-11-12
JP5420144B2 true JP5420144B2 (ja) 2014-02-19

Family

ID=37832784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006264246A Expired - Fee Related JP5420144B2 (ja) 2005-09-28 2006-09-28 基板を処理するプラズマ処理装置および電極組立体

Country Status (6)

Country Link
US (1) US7455735B2 (enExample)
JP (1) JP5420144B2 (enExample)
CN (1) CN1956138B (enExample)
DE (1) DE102006040593A1 (enExample)
SG (1) SG131038A1 (enExample)
TW (1) TWI381065B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3192507B2 (ja) 1992-12-18 2001-07-30 三菱電機株式会社 樹脂シール中空型半導体装置の製造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
US8171877B2 (en) * 2007-03-14 2012-05-08 Lam Research Corporation Backside mounted electrode carriers and assemblies incorporating the same
JP4850811B2 (ja) * 2007-11-06 2012-01-11 東京エレクトロン株式会社 載置台、処理装置および処理システム
JP4805286B2 (ja) * 2008-02-06 2011-11-02 シャープ株式会社 搬送装置
US8276604B2 (en) * 2008-06-30 2012-10-02 Lam Research Corporation Peripherally engaging electrode carriers and assemblies incorporating the same
CN102398234A (zh) * 2010-09-07 2012-04-04 安特(苏州)精密机械有限公司 一种弹簧片配送夹具
DE102014211713A1 (de) * 2014-06-18 2015-12-24 Siemens Aktiengesellschaft Vorrichtung zur Plasmabeschichtung und Verfahren zum Beschichten einer Platine
CN104409401B (zh) * 2014-12-26 2017-02-22 合肥彩虹蓝光科技有限公司 一种等离子清洗设备
JP6645921B2 (ja) * 2016-07-07 2020-02-14 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
US10510515B2 (en) 2017-06-22 2019-12-17 Applied Materials, Inc. Processing tool with electrically switched electrode assembly
DE102019201166A1 (de) * 2019-01-30 2020-07-30 Siemens Aktiengesellschaft Werkstückträger zum Halten eines zu beschichtenden Bauteils, Verwendung eines solchen Werkstückträgers sowie Vorrichtung und Verfahren zum Beschichten eines Bauteils
US12442083B2 (en) * 2019-12-04 2025-10-14 Jiangsu Favored Nanotechnology Co., LTD Electrode support, supporting structure, support, film coating apparatus, and application

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3133307B2 (ja) * 1989-10-13 2001-02-05 株式会社日立製作所 電子顕微鏡
US5075530A (en) * 1990-07-23 1991-12-24 Lee Shih Lu Multi-head type of electro-discharging machine
EP0572716B1 (fr) 1992-05-30 1996-10-09 Charmilles Technologies S.A. Machine d'électroérosion à fil avec pièce à usiner fixe
US5895549A (en) * 1994-07-11 1999-04-20 Applied Komatsu Technology, Inc. Method and apparatus for etching film layers on large substrates
US6245189B1 (en) * 1994-12-05 2001-06-12 Nordson Corporation High Throughput plasma treatment system
WO2001005197A2 (en) * 1999-07-13 2001-01-18 Nordson Corporation High-speed symmetrical plasma treatment system
US6709522B1 (en) * 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
JP2001326266A (ja) * 2001-02-20 2001-11-22 Matsushita Electric Ind Co Ltd プラズマクリーニング装置
US6841033B2 (en) * 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US6852169B2 (en) * 2001-05-16 2005-02-08 Nordson Corporation Apparatus and methods for processing optical fibers with a plasma
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US7018555B2 (en) * 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
JP4413084B2 (ja) * 2003-07-30 2010-02-10 シャープ株式会社 プラズマプロセス装置及びそのクリーニング方法
JP4281692B2 (ja) * 2005-02-15 2009-06-17 パナソニック株式会社 プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3192507B2 (ja) 1992-12-18 2001-07-30 三菱電機株式会社 樹脂シール中空型半導体装置の製造方法

Also Published As

Publication number Publication date
US20070068455A1 (en) 2007-03-29
JP2007095695A (ja) 2007-04-12
SG131038A1 (en) 2007-04-26
TW200732504A (en) 2007-09-01
DE102006040593A1 (de) 2007-03-29
CN1956138B (zh) 2010-06-16
US7455735B2 (en) 2008-11-25
TWI381065B (zh) 2013-01-01
CN1956138A (zh) 2007-05-02

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