CN1956138B - 在等离子体处理系统中处理不同宽度基片的可调电极组件 - Google Patents

在等离子体处理系统中处理不同宽度基片的可调电极组件 Download PDF

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Publication number
CN1956138B
CN1956138B CN200610141520.XA CN200610141520A CN1956138B CN 1956138 B CN1956138 B CN 1956138B CN 200610141520 A CN200610141520 A CN 200610141520A CN 1956138 B CN1956138 B CN 1956138B
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CN
China
Prior art keywords
guide rail
opening
bar
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200610141520.XA
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English (en)
Chinese (zh)
Other versions
CN1956138A (zh
Inventor
托马斯·V·博尔登二世
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordson Corp
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Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of CN1956138A publication Critical patent/CN1956138A/zh
Application granted granted Critical
Publication of CN1956138B publication Critical patent/CN1956138B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32605Removable or replaceable electrodes or electrode systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00Work holders
    • Y10S269/905Work holder for doors and door frames
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/23Chucks or sockets with magnetic or electrostatic means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Treatment Of Fiber Materials (AREA)
CN200610141520.XA 2005-09-28 2006-09-28 在等离子体处理系统中处理不同宽度基片的可调电极组件 Expired - Fee Related CN1956138B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/239,570 2005-09-28
US11/239,570 US7455735B2 (en) 2005-09-28 2005-09-28 Width adjustable substrate support for plasma processing

Publications (2)

Publication Number Publication Date
CN1956138A CN1956138A (zh) 2007-05-02
CN1956138B true CN1956138B (zh) 2010-06-16

Family

ID=37832784

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200610141520.XA Expired - Fee Related CN1956138B (zh) 2005-09-28 2006-09-28 在等离子体处理系统中处理不同宽度基片的可调电极组件

Country Status (6)

Country Link
US (1) US7455735B2 (enExample)
JP (1) JP5420144B2 (enExample)
CN (1) CN1956138B (enExample)
DE (1) DE102006040593A1 (enExample)
SG (1) SG131038A1 (enExample)
TW (1) TWI381065B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3192507B2 (ja) 1992-12-18 2001-07-30 三菱電機株式会社 樹脂シール中空型半導体装置の製造方法
US7465680B2 (en) * 2005-09-07 2008-12-16 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
US8171877B2 (en) * 2007-03-14 2012-05-08 Lam Research Corporation Backside mounted electrode carriers and assemblies incorporating the same
JP4850811B2 (ja) * 2007-11-06 2012-01-11 東京エレクトロン株式会社 載置台、処理装置および処理システム
JP4805286B2 (ja) * 2008-02-06 2011-11-02 シャープ株式会社 搬送装置
US8276604B2 (en) * 2008-06-30 2012-10-02 Lam Research Corporation Peripherally engaging electrode carriers and assemblies incorporating the same
CN102398234A (zh) * 2010-09-07 2012-04-04 安特(苏州)精密机械有限公司 一种弹簧片配送夹具
DE102014211713A1 (de) * 2014-06-18 2015-12-24 Siemens Aktiengesellschaft Vorrichtung zur Plasmabeschichtung und Verfahren zum Beschichten einer Platine
CN104409401B (zh) * 2014-12-26 2017-02-22 合肥彩虹蓝光科技有限公司 一种等离子清洗设备
JP6645921B2 (ja) * 2016-07-07 2020-02-14 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
US10510515B2 (en) 2017-06-22 2019-12-17 Applied Materials, Inc. Processing tool with electrically switched electrode assembly
DE102019201166A1 (de) * 2019-01-30 2020-07-30 Siemens Aktiengesellschaft Werkstückträger zum Halten eines zu beschichtenden Bauteils, Verwendung eines solchen Werkstückträgers sowie Vorrichtung und Verfahren zum Beschichten eines Bauteils
US12442083B2 (en) * 2019-12-04 2025-10-14 Jiangsu Favored Nanotechnology Co., LTD Electrode support, supporting structure, support, film coating apparatus, and application

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572716A1 (fr) * 1992-05-30 1993-12-08 Charmilles Technologies S.A. Machine d'électroérosion à fil avec pièce à usiner fixe
US5895549A (en) * 1994-07-11 1999-04-20 Applied Komatsu Technology, Inc. Method and apparatus for etching film layers on large substrates
CN1585093A (zh) * 2003-07-30 2005-02-23 夏普株式会社 等离子处理装置及其清洗方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3133307B2 (ja) * 1989-10-13 2001-02-05 株式会社日立製作所 電子顕微鏡
US5075530A (en) * 1990-07-23 1991-12-24 Lee Shih Lu Multi-head type of electro-discharging machine
US6245189B1 (en) * 1994-12-05 2001-06-12 Nordson Corporation High Throughput plasma treatment system
WO2001005197A2 (en) * 1999-07-13 2001-01-18 Nordson Corporation High-speed symmetrical plasma treatment system
US6709522B1 (en) * 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
JP2001326266A (ja) * 2001-02-20 2001-11-22 Matsushita Electric Ind Co Ltd プラズマクリーニング装置
US6841033B2 (en) * 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US6852169B2 (en) * 2001-05-16 2005-02-08 Nordson Corporation Apparatus and methods for processing optical fibers with a plasma
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US7018555B2 (en) * 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
JP4281692B2 (ja) * 2005-02-15 2009-06-17 パナソニック株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572716A1 (fr) * 1992-05-30 1993-12-08 Charmilles Technologies S.A. Machine d'électroérosion à fil avec pièce à usiner fixe
US5895549A (en) * 1994-07-11 1999-04-20 Applied Komatsu Technology, Inc. Method and apparatus for etching film layers on large substrates
CN1585093A (zh) * 2003-07-30 2005-02-23 夏普株式会社 等离子处理装置及其清洗方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平10-140376A 1998.05.26
JP平10-223725A 1998.08.21

Also Published As

Publication number Publication date
US20070068455A1 (en) 2007-03-29
JP2007095695A (ja) 2007-04-12
SG131038A1 (en) 2007-04-26
TW200732504A (en) 2007-09-01
DE102006040593A1 (de) 2007-03-29
JP5420144B2 (ja) 2014-02-19
US7455735B2 (en) 2008-11-25
TWI381065B (zh) 2013-01-01
CN1956138A (zh) 2007-05-02

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