JP5418790B2 - Ｅｓｄ保護を有するｍｉｇｆｅｔ回路 - Google Patents

Ｅｓｄ保護を有するｍｉｇｆｅｔ回路 Download PDF

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Publication number
JP5418790B2
JP5418790B2 JP2010542235A JP2010542235A JP5418790B2 JP 5418790 B2 JP5418790 B2 JP 5418790B2 JP 2010542235 A JP2010542235 A JP 2010542235A JP 2010542235 A JP2010542235 A JP 2010542235A JP 5418790 B2 JP5418790 B2 JP 5418790B2
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Japan
Prior art keywords
gate
migf
gate terminal
circuit
migfet
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Expired - Fee Related
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JP2010542235A
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English (en)
Japanese (ja)
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JP2011509528A5 (cg-RX-API-DMAC7.html
JP2011509528A (ja
Inventor
ジー． カジンスキー、マイケル
マシュー、レオ
ダブリュ． ミラー、ジェームズ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2010542235A 2008-01-09 2008-12-10 Ｅｓｄ保護を有するｍｉｇｆｅｔ回路 Expired - Fee Related JP5418790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/971,591 2008-01-09
US11/971,591 US7817387B2 (en) 2008-01-09 2008-01-09 MIGFET circuit with ESD protection
PCT/US2008/086180 WO2009088622A1 (en) 2008-01-09 2008-12-10 Migfet circuit with esd protection

Publications (3)

Publication Number Publication Date
JP2011509528A JP2011509528A (ja) 2011-03-24
JP2011509528A5 JP2011509528A5 (cg-RX-API-DMAC7.html) 2012-02-02
JP5418790B2 true JP5418790B2 (ja) 2014-02-19

Family

ID=40844358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010542235A Expired - Fee Related JP5418790B2 (ja) 2008-01-09 2008-12-10 Ｅｓｄ保護を有するｍｉｇｆｅｔ回路

Country Status (5)

Country Link
US (1) US7817387B2 (cg-RX-API-DMAC7.html)
JP (1) JP5418790B2 (cg-RX-API-DMAC7.html)
KR (1) KR101581969B1 (cg-RX-API-DMAC7.html)
TW (1) TW200945553A (cg-RX-API-DMAC7.html)
WO (1) WO2009088622A1 (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194721B2 (en) * 2008-05-23 2012-06-05 Integrated Device Technology, Inc Signal amplitude distortion within an integrated circuit
US8149553B2 (en) * 2008-05-23 2012-04-03 Integrated Device Technology, Inc Electrostatic discharge event protection for an integrated circuit
US8179952B2 (en) * 2008-05-23 2012-05-15 Integrated Device Technology Inc. Programmable duty cycle distortion generation circuit
US8259888B2 (en) * 2008-05-23 2012-09-04 Integrated Device Technology, Inc. Method of processing signal data with corrected clock phase offset
FR2956246B1 (fr) * 2010-02-08 2013-11-01 St Microelectronics Rousset Circuit integre muni d'une protection contre des decharges electrostatiques
US8604548B2 (en) 2011-11-23 2013-12-10 United Microelectronics Corp. Semiconductor device having ESD device
US10332871B2 (en) * 2016-03-18 2019-06-25 Intel IP Corporation Area-efficient and robust electrostatic discharge circuit

Family Cites Families (32)

* Cited by examiner, † Cited by third party
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US544062A (en) * 1895-08-06 Bandage
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPH02113623A (ja) * 1988-10-21 1990-04-25 Sharp Corp 集積回路の静電気保護回路
EP0435047A3 (en) * 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits
US5237395A (en) * 1991-05-28 1993-08-17 Western Digital Corporation Power rail ESD protection circuit
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5287241A (en) 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
JP2589938B2 (ja) 1993-10-04 1997-03-12 日本モトローラ株式会社 半導体集積回路装置の静電破壊保護回路
US5361185A (en) * 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
US5440162A (en) 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5559659A (en) * 1995-03-23 1996-09-24 Lucent Technologies Inc. Enhanced RC coupled electrostatic discharge protection
EP0740344B1 (en) * 1995-04-24 2002-07-24 Conexant Systems, Inc. Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
EP1067662B1 (en) * 1999-07-05 2004-10-06 STMicroelectronics S.r.l. CMOS Syncronous rectifier circuit for step-up devices
US6287244B1 (en) * 2000-02-17 2001-09-11 John L. Boos Method for obviating knee joint injury
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
JP3800501B2 (ja) * 2001-02-15 2006-07-26 株式会社日立製作所 半導体装置
WO2003005523A2 (en) * 2001-07-05 2003-01-16 Sarnoff Corporation Electrostatic discharge (esd) protection device with simultaneous and distributed self-biasing for multi-finger turn-on
US20030151077A1 (en) * 2002-02-13 2003-08-14 Leo Mathew Method of forming a vertical double gate semiconductor device and structure thereof
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6838322B2 (en) * 2003-05-01 2005-01-04 Freescale Semiconductor, Inc. Method for forming a double-gated semiconductor device
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
JP4429798B2 (ja) * 2004-05-12 2010-03-10 富士通マイクロエレクトロニクス株式会社 フィン型チャネルｆｅｔを用いたシステムｌｓｉ及びその製造方法
US7244640B2 (en) * 2004-10-19 2007-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a body contact in a Finfet structure and a device including the same
US7301741B2 (en) * 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
JP2007053316A (ja) 2005-08-19 2007-03-01 Toshiba Corp Ｅｓｄ保護素子

Also Published As

Publication number Publication date
KR20100098680A (ko) 2010-09-08
US7817387B2 (en) 2010-10-19
JP2011509528A (ja) 2011-03-24
WO2009088622A1 (en) 2009-07-16
US20090174973A1 (en) 2009-07-09
TW200945553A (en) 2009-11-01
KR101581969B1 (ko) 2015-12-31

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