JP5415104B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5415104B2
JP5415104B2 JP2009043480A JP2009043480A JP5415104B2 JP 5415104 B2 JP5415104 B2 JP 5415104B2 JP 2009043480 A JP2009043480 A JP 2009043480A JP 2009043480 A JP2009043480 A JP 2009043480A JP 5415104 B2 JP5415104 B2 JP 5415104B2
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JP
Japan
Prior art keywords
electrode layer
etching
film
conductive film
resist mask
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Expired - Fee Related
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JP2009043480A
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English (en)
Japanese (ja)
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JP2009231828A (ja
JP2009231828A5 (enExample
Inventor
隆文 溝口
真弓 三上
祐美子 齋藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009043480A priority Critical patent/JP5415104B2/ja
Publication of JP2009231828A publication Critical patent/JP2009231828A/ja
Publication of JP2009231828A5 publication Critical patent/JP2009231828A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2009043480A 2008-02-26 2009-02-26 表示装置の作製方法 Expired - Fee Related JP5415104B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009043480A JP5415104B2 (ja) 2008-02-26 2009-02-26 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008043856 2008-02-26
JP2008043856 2008-02-26
JP2009043480A JP5415104B2 (ja) 2008-02-26 2009-02-26 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009231828A JP2009231828A (ja) 2009-10-08
JP2009231828A5 JP2009231828A5 (enExample) 2012-02-09
JP5415104B2 true JP5415104B2 (ja) 2014-02-12

Family

ID=40997426

Family Applications (1)

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JP2009043480A Expired - Fee Related JP5415104B2 (ja) 2008-02-26 2009-02-26 表示装置の作製方法

Country Status (4)

Country Link
US (2) US8035107B2 (enExample)
JP (1) JP5415104B2 (enExample)
CN (1) CN101521182B (enExample)
TW (1) TWI470738B (enExample)

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US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US7749820B2 (en) * 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5539765B2 (ja) * 2009-03-26 2014-07-02 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN101598894B (zh) * 2009-07-07 2011-07-27 友达光电股份有限公司 光掩膜、薄膜晶体管元件及制作薄膜晶体管元件的方法
US8441012B2 (en) * 2009-08-20 2013-05-14 Sharp Kabushiki Kaisha Array substrate, method for manufacturing array substrate, and display device
EP2521180A4 (en) 2009-12-29 2014-06-25 Sharp Kk ACTIVE MATRIX SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US8679986B2 (en) * 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
GB2489939A (en) * 2011-04-11 2012-10-17 Plastic Logic Ltd Control of capacitive coupling in pixel circuitry

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US6493048B1 (en) 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
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KR100494683B1 (ko) 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크
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KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
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KR100603361B1 (ko) * 2004-08-05 2006-07-20 삼성에스디아이 주식회사 평판 디스플레이 장치
KR101085451B1 (ko) 2005-02-11 2011-11-21 삼성전자주식회사 표시장치용 박막트랜지스터 기판과 그 제조방법
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KR101201017B1 (ko) 2005-06-27 2012-11-13 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101225440B1 (ko) 2005-06-30 2013-01-25 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP5105811B2 (ja) 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US8149346B2 (en) 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
EP3229066A1 (en) 2005-12-05 2017-10-11 Semiconductor Energy Laboratory Co., Ltd. Transflective liquid crystal display with a horizontal electric field configuration
EP1958019B1 (en) 2005-12-05 2017-04-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI322288B (en) 2006-03-07 2010-03-21 Au Optronics Corp Manufacture method of pixel array substrate
US8053816B2 (en) * 2006-03-10 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101243809B1 (ko) 2006-06-30 2013-03-18 엘지디스플레이 주식회사 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법
KR101326128B1 (ko) * 2006-09-29 2013-11-06 삼성디스플레이 주식회사 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법
WO2008099528A1 (ja) 2007-02-13 2008-08-21 Sharp Kabushiki Kaisha 表示装置、表示装置の製造方法
WO2009072451A1 (en) 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7883943B2 (en) * 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device

Also Published As

Publication number Publication date
US8901561B2 (en) 2014-12-02
JP2009231828A (ja) 2009-10-08
US20090212296A1 (en) 2009-08-27
CN101521182B (zh) 2013-08-21
TWI470738B (zh) 2015-01-21
US8035107B2 (en) 2011-10-11
TW200941646A (en) 2009-10-01
US20120007087A1 (en) 2012-01-12
CN101521182A (zh) 2009-09-02

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