JP5412678B2 - 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法 - Google Patents

微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法 Download PDF

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Publication number
JP5412678B2
JP5412678B2 JP2011249843A JP2011249843A JP5412678B2 JP 5412678 B2 JP5412678 B2 JP 5412678B2 JP 2011249843 A JP2011249843 A JP 2011249843A JP 2011249843 A JP2011249843 A JP 2011249843A JP 5412678 B2 JP5412678 B2 JP 5412678B2
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Prior art keywords
fine pattern
forming
pattern
semiconductor
mask
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JP2011249843A
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English (en)
Japanese (ja)
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JP2012044217A (ja
Inventor
ホ リー、ジョン
ヨン パク、モー
リョン ホワン、ソー
ヒョン ジュン、イル
ス リー、グワン
ハ キム、ジン
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP2011249843A 2007-09-28 2011-11-15 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法 Active JP5412678B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2007-0098320 2007-09-28
KR20070098320 2007-09-28
KR1020080086063A KR101025990B1 (ko) 2007-09-28 2008-09-01 미세패턴 형성방법 및 이를 이용한 반도체 발광소자 제조방법
KR10-2008-0086063 2008-09-01

Related Parent Applications (1)

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JP2008248787A Division JP2009088519A (ja) 2007-09-28 2008-09-26 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2012044217A JP2012044217A (ja) 2012-03-01
JP5412678B2 true JP5412678B2 (ja) 2014-02-12

Family

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JP2011249843A Active JP5412678B2 (ja) 2007-09-28 2011-11-15 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法

Country Status (3)

Country Link
JP (1) JP5412678B2 (zh)
KR (1) KR101025990B1 (zh)
TW (1) TWI482308B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382568B (zh) * 2009-06-16 2013-01-11 Univ Nat Taiwan 發光元件、發光二極體
TWI459593B (zh) * 2009-06-19 2014-11-01 Fu Der Lai 發光二極體增加發光效率之結構
KR101673454B1 (ko) * 2014-09-17 2016-11-07 국방과학연구소 플라즈몬 구조를 이용한 수광 소자 및 그 제조 방법
JP2020145358A (ja) * 2019-03-07 2020-09-10 豊田合成株式会社 半導体素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013288B2 (ja) * 1997-06-25 2007-11-28 住友化学株式会社 ３−５族化合物半導体用電極の製造方法と３−５族化合物半導体素子
US6335546B1 (en) 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
TW497236B (en) * 2001-08-27 2002-08-01 Chipmos Technologies Inc A soc packaging process
JP4244542B2 (ja) * 2001-08-28 2009-03-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
KR20060030636A (ko) * 2004-10-06 2006-04-11 주식회사 이츠웰 질화물 반도체 성장용 사파이어 기판과 그 제조 방법.
JP2007116057A (ja) * 2005-10-24 2007-05-10 Sumitomo Electric Ind Ltd 半導体素子の製造方法、半導体素子、半導体レーザ、面発光素子、および光導波路
JP2007214260A (ja) * 2006-02-08 2007-08-23 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP4789713B2 (ja) * 2006-06-29 2011-10-12 株式会社豊田中央研究所 ウェットエッチング方法、ダメージ層除去方法、半導体装置の製造方法、および半導体基板の製造方法
JP2008108844A (ja) * 2006-10-24 2008-05-08 Toyota Central R&D Labs Inc トレンチ構造またはメサ構造を有するｉｉｉ族窒化物半導体装置およびその製造方法
JP2008205314A (ja) * 2007-02-21 2008-09-04 Toyota Central R&D Labs Inc Ｉｉｉ族窒化物半導体のエッチング方法および半導体装置の製造方法
KR100900644B1 (ko) 2007-08-29 2009-06-02 삼성전기주식회사 미세패턴 형성방법 및 이를 이용한 반도체 발광소자제조방법

Also Published As

Publication number Publication date
KR101025990B1 (ko) 2011-03-30
TWI482308B (zh) 2015-04-21
KR20090032983A (ko) 2009-04-01
TW200924248A (en) 2009-06-01
JP2012044217A (ja) 2012-03-01

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