JP5411410B2 - 連続熱処理装置 - Google Patents
連続熱処理装置 Download PDFInfo
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- JP5411410B2 JP5411410B2 JP2007093678A JP2007093678A JP5411410B2 JP 5411410 B2 JP5411410 B2 JP 5411410B2 JP 2007093678 A JP2007093678 A JP 2007093678A JP 2007093678 A JP2007093678 A JP 2007093678A JP 5411410 B2 JP5411410 B2 JP 5411410B2
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- workpiece
- gas
- heat treatment
- continuous heat
- heating chamber
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
12−ガス導入部
14−ガス排出部
16−ワイヤ
18−ワーク
Claims (2)
- 加熱室の内部を搬送されるワークに対する熱処理を行う連続熱処理装置であって、
前記加熱室の内部にて所定の搬送方向にワークを搬送する搬送手段と、
前記加熱室の上部からガスを導入するとともに前記ワークに向かって前記ガスを吹き付けるガス導入部であって、前記加熱室の上部における前記搬送方向に直交する幅方向の中央に配置されたガス導入部と、
一部が前記ワークの上面よりも下に位置するように前記ワークの搬送方向の両側方に位置する前記加熱室の両側面に配置され、かつ、前記ワークの搬送方向の側方の所定領域に延びるような形状を呈し、前記ワークに向かって前記ガス導入部から吹き付けられて前記ワークの周囲を通過するガスを、前記ワークから発生する昇華物および揮発物とともに排出するガス排出部と、
を備えた連続熱処理装置。 - 前記ガス導入部が前記搬送方向に沿って複数配置された請求項1に記載の連続熱処理装置。
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JP2007093678A JP5411410B2 (ja) | 2007-03-30 | 2007-03-30 | 連続熱処理装置 |
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JP2007093678A JP5411410B2 (ja) | 2007-03-30 | 2007-03-30 | 連続熱処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008249304A JP2008249304A (ja) | 2008-10-16 |
JP5411410B2 true JP5411410B2 (ja) | 2014-02-12 |
Family
ID=39974456
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Application Number | Title | Priority Date | Filing Date |
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JP2007093678A Active JP5411410B2 (ja) | 2007-03-30 | 2007-03-30 | 連続熱処理装置 |
Country Status (1)
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JP (1) | JP5411410B2 (ja) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04211116A (ja) * | 1990-03-13 | 1992-08-03 | Fujitsu Ltd | 半導体製造装置 |
JPH0526580A (ja) * | 1991-07-17 | 1993-02-02 | Ngk Spark Plug Co Ltd | 連続焼成炉 |
JPH06323738A (ja) * | 1993-05-17 | 1994-11-25 | Ngk Insulators Ltd | ローラーハースキルン |
JPH07111244A (ja) * | 1993-10-13 | 1995-04-25 | Mitsubishi Electric Corp | 気相結晶成長装置 |
JP3603216B2 (ja) * | 1997-06-17 | 2004-12-22 | 株式会社日鉱マテリアルズ | 薄膜成長装置 |
JPH11329922A (ja) * | 1998-05-08 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
JP2000252216A (ja) * | 1999-02-26 | 2000-09-14 | Kanegafuchi Chem Ind Co Ltd | プラズマcvd装置およびシリコン系薄膜光電変換装置の製造方法 |
JP4003205B2 (ja) * | 2001-01-10 | 2007-11-07 | 光洋サーモシステム株式会社 | 熱処理装置 |
JP4473814B2 (ja) * | 2001-02-23 | 2010-06-02 | 株式会社タムラ製作所 | 加熱炉 |
JP2002286377A (ja) * | 2001-03-27 | 2002-10-03 | Okuhara Electric Inc | 熱処理装置 |
JP4133178B2 (ja) * | 2002-09-30 | 2008-08-13 | パイオニア株式会社 | プラズマディスプレイパネルの連続焼成炉及びプラズマディスプレイパネルの製造方法 |
JP2006019552A (ja) * | 2004-07-02 | 2006-01-19 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびそれを用いた半導体装置の製造方法 |
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2007
- 2007-03-30 JP JP2007093678A patent/JP5411410B2/ja active Active
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Publication number | Publication date |
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JP2008249304A (ja) | 2008-10-16 |
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