JP5410400B2 - 誘導性結合プラズマの均一性を改善する側壁磁石及びそれと共に使用するシールド - Google Patents
誘導性結合プラズマの均一性を改善する側壁磁石及びそれと共に使用するシールド Download PDFInfo
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- 238000009616 inductively coupled plasma Methods 0.000 title description 2
- 238000004544 sputter deposition Methods 0.000 claims description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000007373 indentation Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 29
- 239000010410 layer Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000000992 sputter etching Methods 0.000 description 7
- -1 argon ions Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910001460 tantalum ion Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C23C14/34—Sputtering
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- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Description
磁石アレイは、真空チャンバーの外部側壁に装着されるのが好ましい。
J=D0▽n
となる。本発明者の理解によれば、拡散を磁気的に制御することができる。磁界中の中性プラズマの有効拡散定数Dは、次式で与えられることが知られている。
Claims (3)
- プラズマスパッタリアクタに使用するよう適応され、軸の周りで略円形対称であるシールド組立体において、
(1) 内部シールドであって、前記軸に沿って延びる上端であって、前記上端の上方終端は、前記プラズマスパッタリアクタのターゲットと、前記ターゲットと金属側壁との間に配置されたアイソレータとの間にプラズマダークスペースを形成する形状とされる前記上端と、
前記軸に沿って延びる下端と、
前記下端の外面に円形アレイで形成された複数のくぼみであって、前記くぼみは、前記シールドの内側にRFコイルを支持するために、前記くぼみのエリアにおいて前記下端を通過する電気的スタンドオフの部分を受け入れるように構成される前記くぼみと、
前記下端の外面に形成され、各プレートを受け入れるための互いに隣接した2つの平らな面であって、各電気的ラインをRFコイルに通すために各ホールが貫通形成されている平らな面と、
前記上端と下端との間で前記軸から半径方向外方に延びるフランジと、
を備え、前記内部シールドの前記軸に面した内面は、前記軸からの傾斜が10°以下で、それ以外は滑らかであるようにした前記内部シールド、及び
(2) 前記軸の周りで前記内部シールドを囲み、環状外部シールドのまっすぐな外壁の底付近に多数のアパーチャーが円形アレイで形成された環状外部シールド、を備え、
前記アパーチャーに対応する前記内部シールドの前記下端の下方部分は、該下方部分の半径方向厚みを減少するように前記下端の外面に形成された環状くぼみを有する、シールド組立体。 - 前記内部シールドは、前記2つの平らな面に隣接して前記フランジの外側に2つの欠切部を更に備えた、請求項1に記載のシールド組立体。
- (a)中心軸の周りに配列された真空チャンバーと、(b)ターゲットであって、このターゲットを前記チャンバーに支持する支持フランジ、及び該フランジとターゲットのスパッタリング領域との間に形成されたくぼみを含むようなターゲットと、(c)前記チャンバー内の前記中心軸の周りに配列されたRFコイルと、(d)基板を前記ターゲットに対向して支持するために前記中心軸に沿って動作位置を有しているペデスタルと、を備えたスパッタリアクタに使用するために、前記中心軸の周りで略円形対称であるシールド組立体が、
(1) 内部シールドであって、前記軸に沿って前記くぼみへと延びる上端であって、前記上端の上方終端は、前記ターゲットとアイソレータとの間にプラズマダークスペースを形成する形状とされ、前記アイソレータは、前記ターゲットと前記チャンバーの金属性側壁との間に配置される前記上端と、
前記軸に沿って、前記動作位置にある前記ペデスタルの上面の後方へと延びる下端と、 前記下端の外面に円形アレイで形成された複数のくぼみであって、前記くぼみは、前記RFコイルを支持するため、前記くぼみのエリアにおいて前記下端を通過する電気的スタンドオフの部分を受け入れるように構成される前記くぼみと、
各プレートを受け入れるための互いに隣接した2つの平らな面であって、各電気的ラインをRFコイルに通すために各ホールが貫通形成されている平らな面と、
前記上端と下端との間で前記軸から半径方向外方に延びるフランジと、
を備え、前記内部シールドの前記軸に面した内面は、前記軸からの傾斜が10°以下で、それ以外は滑らかであるようにした前記内部シールド、及び
(2) 前記軸の周りで前記シールドを囲み、環状外部シールドのまっすぐな外壁の底付近に多数のアパーチャーが円形アレイで形成された環状外部シールド、を備え、
前記内部シールドの前記下端の下方部分は、該下方部分の半径方向厚みを減少するように前記下端の外面に形成された環状くぼみを有するシールド組立体。
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US10/608,306 | 2003-06-26 | ||
US10/608,306 US7041201B2 (en) | 2001-11-14 | 2003-06-26 | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
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JP2006517590A Division JP4970937B2 (ja) | 2003-06-26 | 2004-06-22 | 誘導性結合プラズマの均一性を改善する側壁磁石及びそれと共に使用するシールド |
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JP2010256888A Active JP5410400B2 (ja) | 2003-06-26 | 2010-11-17 | 誘導性結合プラズマの均一性を改善する側壁磁石及びそれと共に使用するシールド |
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JP (2) | JP4970937B2 (ja) |
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US20050199491A1 (en) | 2005-09-15 |
KR101138566B1 (ko) | 2012-05-10 |
US7041201B2 (en) | 2006-05-09 |
WO2005004189A3 (en) | 2006-01-19 |
CN101924006A (zh) | 2010-12-22 |
JP4970937B2 (ja) | 2012-07-11 |
KR20060082398A (ko) | 2006-07-18 |
WO2005004189A2 (en) | 2005-01-13 |
JP2011080154A (ja) | 2011-04-21 |
CN1813332B (zh) | 2010-09-29 |
US20040055880A1 (en) | 2004-03-25 |
CN1813332A (zh) | 2006-08-02 |
US7569125B2 (en) | 2009-08-04 |
CN101924006B (zh) | 2012-07-18 |
JP2007526395A (ja) | 2007-09-13 |
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