JP5406284B2 - 有機半導体の堆積のための混合溶媒系 - Google Patents

有機半導体の堆積のための混合溶媒系 Download PDF

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Publication number
JP5406284B2
JP5406284B2 JP2011513554A JP2011513554A JP5406284B2 JP 5406284 B2 JP5406284 B2 JP 5406284B2 JP 2011513554 A JP2011513554 A JP 2011513554A JP 2011513554 A JP2011513554 A JP 2011513554A JP 5406284 B2 JP5406284 B2 JP 5406284B2
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weight percent
group
composition
substituted
carbon atoms
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JP2011513554A
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JP2011525044A (ja
JP2011525044A5 (cg-RX-API-DMAC7.html
Inventor
エス． クロウ，ロバート
エイチ． レディンガー，デイビッド
シー． ノバック，ジェイムズ
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
JP2011513554A 2008-06-11 2009-05-29 有機半導体の堆積のための混合溶媒系 Expired - Fee Related JP5406284B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6059508P 2008-06-11 2008-06-11
US61/060,595 2008-06-11
PCT/US2009/045571 WO2009151978A1 (en) 2008-06-11 2009-05-29 Mixed solvent systems for deposition of organic semiconductors

Publications (3)

Publication Number Publication Date
JP2011525044A JP2011525044A (ja) 2011-09-08
JP2011525044A5 JP2011525044A5 (cg-RX-API-DMAC7.html) 2012-07-19
JP5406284B2 true JP5406284B2 (ja) 2014-02-05

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Family Applications (1)

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JP2011513554A Expired - Fee Related JP5406284B2 (ja) 2008-06-11 2009-05-29 有機半導体の堆積のための混合溶媒系

Country Status (5)

Country Link
US (1) US8232550B2 (cg-RX-API-DMAC7.html)
EP (1) EP2304821B1 (cg-RX-API-DMAC7.html)
JP (1) JP5406284B2 (cg-RX-API-DMAC7.html)
CN (1) CN102106012B (cg-RX-API-DMAC7.html)
WO (1) WO2009151978A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

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GB0612929D0 (en) 2006-06-29 2006-08-09 Univ Cambridge Tech High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers
PL3981502T3 (pl) 2007-04-26 2025-06-16 Johnson Matthey Public Limited Company Katalizatory scr z metalami przejściowymi/zeolitem
JP5658145B2 (ja) * 2008-05-30 2015-01-21 スリーエム イノベイティブ プロパティズ カンパニー シリルメチルペンタセン化合物及び組成物、並びにそれらの製造及び使用方法
KR20170091788A (ko) * 2009-12-23 2017-08-09 메르크 파텐트 게엠베하 중합체성 결합제를 포함하는 조성물
JP5840621B2 (ja) 2009-12-23 2016-01-06 メルク パテント ゲーエムベーハー 有機半導体化合物を含む組成物
WO2011147523A1 (en) * 2010-05-27 2011-12-01 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
US8389744B1 (en) * 2011-10-11 2013-03-05 University Of New Hampshire TTPO (5 6,7-trithiapentacene-13-one) and its derivatives: a new class of thermally stable, photooxidatively resistant organic semiconductors
US9293711B2 (en) 2012-08-09 2016-03-22 Polyera Corporation Organic semiconductor formulations
KR102145424B1 (ko) * 2013-11-11 2020-08-18 엘지디스플레이 주식회사 표시장치 제조용 잉크 및 이를 이용한 표시장치의 제조방법
JP6578645B2 (ja) * 2014-10-21 2019-09-25 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
JP7019559B2 (ja) * 2015-07-15 2022-02-15 メルク パテント ゲーエムベーハー 有機半導体化合物を含む組成物
US11495744B2 (en) * 2017-03-21 2022-11-08 Nippon Kayaku Kabushiki Kaisha Organic semiconductor composition, organic thin film, and organic thin film transistor
GB2560934A (en) 2017-03-28 2018-10-03 Sumitomo Chemical Co Solvent systems for the preparation of photosensitive organic electronic devices

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US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
EP1364420B1 (en) * 2001-02-27 2012-10-10 Cambridge Display Technology Limited Formulation for depositing a material on a substrate using ink jet printing
KR100552866B1 (ko) * 2001-08-09 2006-02-20 아사히 가세이 가부시키가이샤 유기 반도체 소자
US6690029B1 (en) * 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
CN1582506A (zh) * 2001-09-27 2005-02-16 3M创新有限公司 取代并五苯半导体
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
ATE475971T1 (de) * 2003-11-28 2010-08-15 Merck Patent Gmbh Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren
DE102004007777A1 (de) * 2004-02-18 2005-09-08 Covion Organic Semiconductors Gmbh Lösungen organischer Halbleiter
DE102004023276A1 (de) * 2004-05-11 2005-12-01 Covion Organic Semiconductors Gmbh Lösungen organischer Halbleiter
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US7264872B2 (en) * 2004-12-30 2007-09-04 3M Innovative Properties Company Durable high index nanocomposites for AR coatings
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US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US20060220007A1 (en) * 2005-04-05 2006-10-05 Bailey David B Acene compounds having a single terminal fused thiophene as semiconductor materials for thin film transistors and methods of making the same
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JP5055849B2 (ja) * 2006-06-14 2012-10-24 コニカミノルタホールディングス株式会社 表示装置、有機薄膜トランジスタの製造方法
JP2010512005A (ja) 2006-12-01 2010-04-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 改善された溶液処理方法による有機半導体膜の性能特性の向上
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
JP5658145B2 (ja) * 2008-05-30 2015-01-21 スリーエム イノベイティブ プロパティズ カンパニー シリルメチルペンタセン化合物及び組成物、並びにそれらの製造及び使用方法
CN102119164A (zh) * 2008-06-19 2011-07-06 3M创新有限公司 可溶液处理的有机半导体
WO2009158201A1 (en) 2008-06-27 2009-12-30 3M Innovative Properties Company Methods op fabricating crystalline organic semiconductive layers
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
US7948016B1 (en) * 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

Also Published As

Publication number Publication date
WO2009151978A1 (en) 2009-12-17
EP2304821B1 (en) 2012-06-27
US8232550B2 (en) 2012-07-31
JP2011525044A (ja) 2011-09-08
US20110092015A1 (en) 2011-04-21
EP2304821A1 (en) 2011-04-06
CN102106012B (zh) 2013-05-29
CN102106012A (zh) 2011-06-22

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