JP5406284B2 - 有機半導体の堆積のための混合溶媒系 - Google Patents

有機半導体の堆積のための混合溶媒系 Download PDF

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Publication number
JP5406284B2
JP5406284B2 JP2011513554A JP2011513554A JP5406284B2 JP 5406284 B2 JP5406284 B2 JP 5406284B2 JP 2011513554 A JP2011513554 A JP 2011513554A JP 2011513554 A JP2011513554 A JP 2011513554A JP 5406284 B2 JP5406284 B2 JP 5406284B2
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JP2011525044A (ja
JP2011525044A5 (cg-RX-API-DMAC10.html
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エス． クロウ，ロバート
エイチ． レディンガー，デイビッド
シー． ノバック，ジェイムズ
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
JP2011513554A 2008-06-11 2009-05-29 有機半導体の堆積のための混合溶媒系 Expired - Fee Related JP5406284B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6059508P 2008-06-11 2008-06-11
US61/060,595 2008-06-11
PCT/US2009/045571 WO2009151978A1 (en) 2008-06-11 2009-05-29 Mixed solvent systems for deposition of organic semiconductors

Publications (3)

Publication Number Publication Date
JP2011525044A JP2011525044A (ja) 2011-09-08
JP2011525044A5 JP2011525044A5 (cg-RX-API-DMAC10.html) 2012-07-19
JP5406284B2 true JP5406284B2 (ja) 2014-02-05

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Family Applications (1)

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JP2011513554A Expired - Fee Related JP5406284B2 (ja) 2008-06-11 2009-05-29 有機半導体の堆積のための混合溶媒系

Country Status (5)

Country Link
US (1) US8232550B2 (cg-RX-API-DMAC10.html)
EP (1) EP2304821B1 (cg-RX-API-DMAC10.html)
JP (1) JP5406284B2 (cg-RX-API-DMAC10.html)
CN (1) CN102106012B (cg-RX-API-DMAC10.html)
WO (1) WO2009151978A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0612929D0 (en) 2006-06-29 2006-08-09 Univ Cambridge Tech High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers
MX2009011443A (es) 2007-04-26 2010-01-18 Johnson Matthey Plc Catalizadores de reduccion catalitica selectiva de metal de transicion/zeolita.
WO2009155106A1 (en) * 2008-05-30 2009-12-23 3M Innovative Properties Company Silylethynyl pentacene compounds and compositions and methods of making and using the same
KR20120123361A (ko) 2009-12-23 2012-11-08 메르크 파텐트 게엠베하 유기 반도성 화합물을 포함하는 조성물
CN107573484A (zh) * 2009-12-23 2018-01-12 默克专利有限公司 包括聚合粘结剂的组合物
RU2012156386A (ru) * 2010-05-27 2014-07-10 Мерк Патент Гмбх Состав и способ получения органических электронных устройств
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
US8389744B1 (en) * 2011-10-11 2013-03-05 University Of New Hampshire TTPO (5 6,7-trithiapentacene-13-one) and its derivatives: a new class of thermally stable, photooxidatively resistant organic semiconductors
US9293711B2 (en) 2012-08-09 2016-03-22 Polyera Corporation Organic semiconductor formulations
KR102145424B1 (ko) * 2013-11-11 2020-08-18 엘지디스플레이 주식회사 표시장치 제조용 잉크 및 이를 이용한 표시장치의 제조방법
JP6578645B2 (ja) * 2014-10-21 2019-09-25 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
KR102643183B1 (ko) * 2015-07-15 2024-03-04 메르크 파텐트 게엠베하 유기 반도전성 화합물들을 포함하는 조성물
EP3608981A4 (en) * 2017-03-21 2020-12-23 Nippon Kayaku Kabushiki Kaisha ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR THIN-FILM AND ORGANIC THIN-FILM TRANSISTOR
GB2560934A (en) * 2017-03-28 2018-10-03 Sumitomo Chemical Co Solvent systems for the preparation of photosensitive organic electronic devices

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265243B1 (en) 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
AU2002236023A1 (en) * 2001-02-27 2002-09-12 Cambridge Display Technology Limited Formulation for depositing a material on a substrate using ink jet printing
CN100334263C (zh) 2001-08-09 2007-08-29 旭化成株式会社 有机半导体元件
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
AU2002327747A1 (en) 2001-09-27 2003-04-07 3M Innovative Properties Company Substituted pentacene semiconductors
US7098525B2 (en) 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
WO2005055248A2 (en) 2003-11-28 2005-06-16 Merck Patent Gmbh Organic semiconducting layer formulations comprising polyacenes and organic binder polymers
DE102004007777A1 (de) 2004-02-18 2005-09-08 Covion Organic Semiconductors Gmbh Lösungen organischer Halbleiter
DE102004023276A1 (de) 2004-05-11 2005-12-01 Covion Organic Semiconductors Gmbh Lösungen organischer Halbleiter
EP1850405A1 (en) 2004-12-28 2007-10-31 Idemitsu Kosan Co., Ltd. Ink for forming organic el coating film and method for production thereof
US7264872B2 (en) 2004-12-30 2007-09-04 3M Innovative Properties Company Durable high index nanocomposites for AR coatings
US7241437B2 (en) 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
US7211679B2 (en) 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US20060220007A1 (en) * 2005-04-05 2006-10-05 Bailey David B Acene compounds having a single terminal fused thiophene as semiconductor materials for thin film transistors and methods of making the same
EP1986247A1 (en) * 2005-05-12 2008-10-29 MERCK PATENT GmbH Polyacene and semiconductor Formulation
US7319153B2 (en) 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US20070146426A1 (en) 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
US7514710B2 (en) 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
US7608679B2 (en) 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7666968B2 (en) 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
JP2007311677A (ja) * 2006-05-22 2007-11-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法、有機薄膜トランジスタ
JP5055849B2 (ja) * 2006-06-14 2012-10-24 コニカミノルタホールディングス株式会社 表示装置、有機薄膜トランジスタの製造方法
ES2885674T3 (es) 2006-12-01 2021-12-15 Univ California Mejora de las características de rendimiento de películas semiconductoras orgánicas mediante un mejor procesamiento de solución
US20090001356A1 (en) 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
WO2009155106A1 (en) 2008-05-30 2009-12-23 3M Innovative Properties Company Silylethynyl pentacene compounds and compositions and methods of making and using the same
CN102119164A (zh) 2008-06-19 2011-07-06 3M创新有限公司 可溶液处理的有机半导体
WO2009158201A1 (en) 2008-06-27 2009-12-30 3M Innovative Properties Company Methods op fabricating crystalline organic semiconductive layers
SG176209A1 (en) 2009-05-29 2012-01-30 3M Innovative Properties Co Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
US7948016B1 (en) 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

Also Published As

Publication number Publication date
US20110092015A1 (en) 2011-04-21
JP2011525044A (ja) 2011-09-08
EP2304821A1 (en) 2011-04-06
WO2009151978A1 (en) 2009-12-17
CN102106012A (zh) 2011-06-22
US8232550B2 (en) 2012-07-31
CN102106012B (zh) 2013-05-29
EP2304821B1 (en) 2012-06-27

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