JP5402630B2 - スイッチ回路および半導体集積回路 - Google Patents
スイッチ回路および半導体集積回路 Download PDFInfo
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- JP5402630B2 JP5402630B2 JP2009517845A JP2009517845A JP5402630B2 JP 5402630 B2 JP5402630 B2 JP 5402630B2 JP 2009517845 A JP2009517845 A JP 2009517845A JP 2009517845 A JP2009517845 A JP 2009517845A JP 5402630 B2 JP5402630 B2 JP 5402630B2
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- switch
- resistance change
- circuit
- voltage
- change switch
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- 239000004065 semiconductor Substances 0.000 title claims description 25
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- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 19
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- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000047 product Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
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- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 238000012937 correction Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101000822695 Clostridium perfringens (strain 13 / Type A) Small, acid-soluble spore protein C1 Proteins 0.000 description 1
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- 238000007562 laser obscuration time method Methods 0.000 description 1
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- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Description
11 第1の配線
12 第2の配線
13 抵抗変化スイッチ
14、43 抵抗変化層
15、41 第1電極
16、44 第2電極
20 再構成可能な半導体集積回路
21 記憶回路
22 演算処理回路
23a〜23c インタフェース回路
24a〜24c 第1のスイッチ回路
25a〜25d 第2のスイッチ回路
26 配線群
27 入出力ピン
31a〜31c 入力信号線
32a〜32c 出力信号線
33a〜33c 選択線
34 抵抗変化スイッチ
40、84 基板
42 層間絶縁膜
61、71 第1の抵抗変化スイッチ
62、72 第2の抵抗変化スイッチ
81 ソース電極
82 ドレイン電極
83 ゲート電極
[2]基板電流による電圧降下により、ソースと基板間が順方向に電圧が誘起され、ソースから多量の電子が基板へ流入する。
[3]流入した電子を種としたドレイン近傍でのインパクトイオン化により正孔が発生し、基板電流となる。
[4]1〜3が正帰還となってドレイン電流は急激に増大する。
Claims (4)
- 2つの金属層と該2つの金属層の間にそれぞれに接して設けられた抵抗変化層とを有し、前記2つの金属層間に電圧を印加することにより低抵抗状態および高抵抗状態間を遷移可能なスイッチ素子を複数備えたスイッチ回路であって、
前記抵抗変化層が前記2つの金属層と接する面のうち小さい方の面の面積である接合面積が異なる少なくとも2種類の前記スイッチ素子を有し、
それぞれの前記スイッチ素子が有する2つの電極のうち、少なくとも一方の電極は互いに異なる配線に接続されている、スイッチ回路。 - 前記スイッチ素子の状態を遷移させるための電界効果トランジスタが前記スイッチ素子に接続され、
前記スイッチ素子を前記高抵抗状態から前記低抵抗状態に遷移させる際に前記スイッチ素子に流れる電流を前記電界効果トランジスタが制限する、請求項1に記載のスイッチ回路。 - 複数の前記スイッチ素子のうち、前記高抵抗状態から前記低抵抗状態に遷移させる頻度が所定の値以下であるスイッチ素子の前記接合面積は、前記スイッチ素子の閾値電圧が前記電界効果トランジスタの動作電圧の2倍となる接合面積よりも小さい、請求項1または2に記載のスイッチ回路。
- プログラムを格納するための記憶回路と、
前記プログラムを実行するための演算処理回路と、
前記演算処理回路と外部に接続するための入出力端子とを接続する複数のインタフェース回路と、
前記複数のインタフェース回路のうちいずれか1つのインタフェース回路を選択するための請求項1から3のいずれか1項記載のスイッチ回路と、
を有する半導体集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009517845A JP5402630B2 (ja) | 2007-06-07 | 2008-05-30 | スイッチ回路および半導体集積回路 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007151787 | 2007-06-07 | ||
JP2007151787 | 2007-06-07 | ||
PCT/JP2008/060031 WO2008149808A1 (ja) | 2007-06-07 | 2008-05-30 | スイッチ回路および半導体集積回路 |
JP2009517845A JP5402630B2 (ja) | 2007-06-07 | 2008-05-30 | スイッチ回路および半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008149808A1 JPWO2008149808A1 (ja) | 2010-08-26 |
JP5402630B2 true JP5402630B2 (ja) | 2014-01-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009517845A Expired - Fee Related JP5402630B2 (ja) | 2007-06-07 | 2008-05-30 | スイッチ回路および半導体集積回路 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5402630B2 (ja) |
WO (1) | WO2008149808A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9672103B2 (en) | 2014-09-22 | 2017-06-06 | Kabushiki Kaisha Toshiba | Decoding device, decoding method, and memory system |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8129704B2 (en) * | 2008-05-01 | 2012-03-06 | Intermolecular, Inc. | Non-volatile resistive-switching memories |
JP5549105B2 (ja) * | 2009-04-15 | 2014-07-16 | ソニー株式会社 | 抵抗変化型メモリデバイスおよびその動作方法 |
US9029825B2 (en) | 2010-06-16 | 2015-05-12 | Nec Corporation | Semiconductor device and manufacturing method for semiconductor device |
JP5687978B2 (ja) * | 2011-09-14 | 2015-03-25 | ルネサスエレクトロニクス株式会社 | 抵抗変化型不揮発記憶装置、半導体装置及び抵抗変化型不揮発記憶装置の動作方法 |
CN106575703B (zh) * | 2014-06-26 | 2019-12-17 | 英特尔公司 | 基于氧化物的三端子电阻式开关逻辑器件 |
EP3238246A4 (en) | 2014-12-24 | 2018-08-22 | Intel Corporation | Structure and method to self align via to top and bottom of tight pitch metal interconnect layers |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1116342A (ja) * | 1997-06-23 | 1999-01-22 | Fujitsu Ltd | 品種切り替え可能な半導体装置及びその動作試験方法 |
JP2002197055A (ja) * | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | インターフェース内蔵型半導体装置 |
JP2004145952A (ja) * | 2002-10-23 | 2004-05-20 | Nec Electronics Corp | Mram及びその書込方法 |
JP2005101535A (ja) * | 2003-08-27 | 2005-04-14 | Nec Corp | 半導体装置 |
JP2006319028A (ja) * | 2005-05-11 | 2006-11-24 | Nec Corp | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
JP2007048779A (ja) * | 2005-08-05 | 2007-02-22 | Sharp Corp | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
JP2007053125A (ja) * | 2005-08-15 | 2007-03-01 | National Institute Of Advanced Industrial & Technology | スイッチング素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3905909B2 (ja) * | 2005-09-05 | 2007-04-18 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4370384B2 (ja) * | 2005-09-15 | 2009-11-25 | 独立行政法人産業技術総合研究所 | 高速化低消費電力論理装置 |
-
2008
- 2008-05-30 JP JP2009517845A patent/JP5402630B2/ja not_active Expired - Fee Related
- 2008-05-30 WO PCT/JP2008/060031 patent/WO2008149808A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1116342A (ja) * | 1997-06-23 | 1999-01-22 | Fujitsu Ltd | 品種切り替え可能な半導体装置及びその動作試験方法 |
JP2002197055A (ja) * | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | インターフェース内蔵型半導体装置 |
JP2004145952A (ja) * | 2002-10-23 | 2004-05-20 | Nec Electronics Corp | Mram及びその書込方法 |
JP2005101535A (ja) * | 2003-08-27 | 2005-04-14 | Nec Corp | 半導体装置 |
JP2006319028A (ja) * | 2005-05-11 | 2006-11-24 | Nec Corp | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
JP2007048779A (ja) * | 2005-08-05 | 2007-02-22 | Sharp Corp | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
JP2007053125A (ja) * | 2005-08-15 | 2007-03-01 | National Institute Of Advanced Industrial & Technology | スイッチング素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9672103B2 (en) | 2014-09-22 | 2017-06-06 | Kabushiki Kaisha Toshiba | Decoding device, decoding method, and memory system |
Also Published As
Publication number | Publication date |
---|---|
WO2008149808A1 (ja) | 2008-12-11 |
JPWO2008149808A1 (ja) | 2010-08-26 |
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