JP5398837B2 - プラズマcvd装置、プラズマ電極および半導体膜の製造方法 - Google Patents
プラズマcvd装置、プラズマ電極および半導体膜の製造方法 Download PDFInfo
- Publication number
- JP5398837B2 JP5398837B2 JP2011526696A JP2011526696A JP5398837B2 JP 5398837 B2 JP5398837 B2 JP 5398837B2 JP 2011526696 A JP2011526696 A JP 2011526696A JP 2011526696 A JP2011526696 A JP 2011526696A JP 5398837 B2 JP5398837 B2 JP 5398837B2
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- JP
- Japan
- Prior art keywords
- gas
- plasma
- shower plate
- main electrode
- heat transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011526696A JP5398837B2 (ja) | 2009-08-10 | 2010-04-26 | プラズマcvd装置、プラズマ電極および半導体膜の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009185828 | 2009-08-10 | ||
JP2009185828 | 2009-08-10 | ||
JP2011526696A JP5398837B2 (ja) | 2009-08-10 | 2010-04-26 | プラズマcvd装置、プラズマ電極および半導体膜の製造方法 |
PCT/JP2010/057383 WO2011018912A1 (ja) | 2009-08-10 | 2010-04-26 | プラズマcvd装置、プラズマ電極および半導体膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011018912A1 JPWO2011018912A1 (ja) | 2013-01-17 |
JP5398837B2 true JP5398837B2 (ja) | 2014-01-29 |
Family
ID=43586092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526696A Expired - Fee Related JP5398837B2 (ja) | 2009-08-10 | 2010-04-26 | プラズマcvd装置、プラズマ電極および半導体膜の製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5398837B2 (de) |
CN (1) | CN102473612B (de) |
DE (1) | DE112010003248B4 (de) |
WO (1) | WO2011018912A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210002149A (ko) * | 2019-06-26 | 2021-01-07 | 세메스 주식회사 | 샤워 헤드 유닛, 이를 포함하는 기판 처리 장치 및 샤워 헤드 유닛 조립 방법 |
KR20210047375A (ko) * | 2018-09-26 | 2021-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 프로세싱 챔버용 열 전도성 스페이서 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI480417B (zh) | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
JP2018528616A (ja) * | 2015-09-22 | 2018-09-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シャワーヘッド支持構造 |
WO2017149739A1 (ja) * | 2016-03-03 | 2017-09-08 | コアテクノロジー株式会社 | プラズマ処理装置及びプラズマ処理用反応容器の構造 |
JP7224175B2 (ja) * | 2018-12-26 | 2023-02-17 | 東京エレクトロン株式会社 | 成膜装置及び方法 |
CN112837985B (zh) * | 2019-11-22 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 上电极组件以及等离子体处理设备 |
CN112030110A (zh) * | 2020-08-21 | 2020-12-04 | 无锡爱尔华光电科技有限公司 | 一种基材可分离的真空镀膜设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338458A (ja) * | 1993-05-28 | 1994-12-06 | Kokusai Electric Co Ltd | プラズマcvd装置 |
JPH09213685A (ja) * | 1996-01-30 | 1997-08-15 | Hitachi Electron Eng Co Ltd | 半導体装置用プラズマ装置のプラズマ電極 |
WO2005065186A2 (en) * | 2003-12-23 | 2005-07-21 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
JP2009010101A (ja) * | 2007-06-27 | 2009-01-15 | Tokyo Electron Ltd | 基板処理装置およびシャワーヘッド |
JP2009094380A (ja) * | 2007-10-11 | 2009-04-30 | Renesas Technology Corp | 半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4578694B2 (ja) | 2001-02-09 | 2010-11-10 | 株式会社カネカ | プラズマcvd装置およびプラズマcvd装置を用いたシリコン系膜の製造方法 |
TW200537695A (en) * | 2004-03-19 | 2005-11-16 | Adv Lcd Tech Dev Ct Co Ltd | Insulating film forming method, insulating film forming apparatus, and plasma film forming apparatus |
-
2010
- 2010-04-26 WO PCT/JP2010/057383 patent/WO2011018912A1/ja active Application Filing
- 2010-04-26 JP JP2011526696A patent/JP5398837B2/ja not_active Expired - Fee Related
- 2010-04-26 DE DE112010003248.3T patent/DE112010003248B4/de not_active Expired - Fee Related
- 2010-04-26 CN CN201080035372.8A patent/CN102473612B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338458A (ja) * | 1993-05-28 | 1994-12-06 | Kokusai Electric Co Ltd | プラズマcvd装置 |
JPH09213685A (ja) * | 1996-01-30 | 1997-08-15 | Hitachi Electron Eng Co Ltd | 半導体装置用プラズマ装置のプラズマ電極 |
WO2005065186A2 (en) * | 2003-12-23 | 2005-07-21 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
JP2009010101A (ja) * | 2007-06-27 | 2009-01-15 | Tokyo Electron Ltd | 基板処理装置およびシャワーヘッド |
JP2009094380A (ja) * | 2007-10-11 | 2009-04-30 | Renesas Technology Corp | 半導体装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210047375A (ko) * | 2018-09-26 | 2021-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 프로세싱 챔버용 열 전도성 스페이서 |
KR102529845B1 (ko) * | 2018-09-26 | 2023-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 프로세싱 챔버용 열 전도성 스페이서 |
KR20210002149A (ko) * | 2019-06-26 | 2021-01-07 | 세메스 주식회사 | 샤워 헤드 유닛, 이를 포함하는 기판 처리 장치 및 샤워 헤드 유닛 조립 방법 |
KR102243897B1 (ko) | 2019-06-26 | 2021-04-26 | 세메스 주식회사 | 샤워 헤드 유닛, 이를 포함하는 기판 처리 장치 및 샤워 헤드 유닛 조립 방법 |
Also Published As
Publication number | Publication date |
---|---|
DE112010003248T5 (de) | 2013-05-02 |
DE112010003248B4 (de) | 2014-12-24 |
WO2011018912A1 (ja) | 2011-02-17 |
CN102473612A (zh) | 2012-05-23 |
CN102473612B (zh) | 2015-06-10 |
JPWO2011018912A1 (ja) | 2013-01-17 |
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