JP5391162B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

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Publication number
JP5391162B2
JP5391162B2 JP2010182086A JP2010182086A JP5391162B2 JP 5391162 B2 JP5391162 B2 JP 5391162B2 JP 2010182086 A JP2010182086 A JP 2010182086A JP 2010182086 A JP2010182086 A JP 2010182086A JP 5391162 B2 JP5391162 B2 JP 5391162B2
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Japan
Prior art keywords
semiconductor device
power semiconductor
heat
package
diode
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Application number
JP2010182086A
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English (en)
Japanese (ja)
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JP2012043875A5 (enrdf_load_stackoverflow
JP2012043875A (ja
Inventor
志織 井高
靖 中山
健史 大井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2010182086A priority Critical patent/JP5391162B2/ja
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Publication of JP2012043875A5 publication Critical patent/JP2012043875A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2010182086A 2010-08-17 2010-08-17 電力用半導体装置 Active JP5391162B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010182086A JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010182086A JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2012043875A JP2012043875A (ja) 2012-03-01
JP2012043875A5 JP2012043875A5 (enrdf_load_stackoverflow) 2012-11-29
JP5391162B2 true JP5391162B2 (ja) 2014-01-15

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JP2010182086A Active JP5391162B2 (ja) 2010-08-17 2010-08-17 電力用半導体装置

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JP (1) JP5391162B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6105168B2 (ja) 2014-07-18 2017-03-29 三菱電機株式会社 車両用補助電源装置
JP6381453B2 (ja) * 2015-01-27 2018-08-29 三菱電機株式会社 半導体装置
JP6849660B2 (ja) * 2016-04-01 2021-03-24 三菱電機株式会社 半導体装置
JP6852513B2 (ja) * 2017-03-30 2021-03-31 株式会社オートネットワーク技術研究所 回路装置
JP6877600B1 (ja) * 2020-01-16 2021-05-26 三菱電機株式会社 半導体装置
KR20220142498A (ko) * 2020-02-18 2022-10-21 램 리써치 코포레이션 열 확산기를 갖는 고온 기판 지지부
JP2023183301A (ja) * 2022-06-15 2023-12-27 日立Astemo株式会社 電力変換装置
WO2024018810A1 (ja) * 2022-07-21 2024-01-25 ローム株式会社 半導体装置
JP7675786B1 (ja) * 2023-11-24 2025-05-13 株式会社東芝 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126055U (enrdf_load_stackoverflow) * 1990-03-30 1991-12-19
JP3130239B2 (ja) * 1995-08-02 2001-01-31 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
JP2004095670A (ja) * 2002-08-29 2004-03-25 Toshiba Corp 半導体装置
KR100713979B1 (ko) * 2003-09-04 2007-05-04 마츠시타 덴끼 산교 가부시키가이샤 반도체장치
JP2008060430A (ja) * 2006-08-31 2008-03-13 Daikin Ind Ltd 電力変換装置
US9129885B2 (en) * 2010-01-15 2015-09-08 Mitsubishi Electric Corporation Power semiconductor module

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