JP5382321B2 - レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 - Google Patents
レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 Download PDFInfo
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- JP5382321B2 JP5382321B2 JP2009086038A JP2009086038A JP5382321B2 JP 5382321 B2 JP5382321 B2 JP 5382321B2 JP 2009086038 A JP2009086038 A JP 2009086038A JP 2009086038 A JP2009086038 A JP 2009086038A JP 5382321 B2 JP5382321 B2 JP 5382321B2
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| US11048169B2 (en) | 2017-12-26 | 2021-06-29 | Samsung Sdi Co., Ltd. | Resist underlayer composition, and method of forming patterns using the composition |
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| US9395628B2 (en) | 2013-02-25 | 2016-07-19 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group |
| KR102276783B1 (ko) | 2013-06-26 | 2021-07-14 | 닛산 가가쿠 가부시키가이샤 | 치환된 가교성 화합물을 포함하는 레지스트 하층막 형성 조성물 |
| CN106133606B (zh) | 2014-03-26 | 2019-06-28 | 日产化学工业株式会社 | 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物 |
| WO2017086213A1 (ja) | 2015-11-17 | 2017-05-26 | 日産化学工業株式会社 | レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物 |
| KR102446546B1 (ko) | 2016-09-15 | 2022-09-23 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
| WO2018143359A1 (ja) | 2017-02-03 | 2018-08-09 | 日産化学工業株式会社 | ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物 |
| CN115698857A (zh) | 2020-06-12 | 2023-02-03 | 日产化学株式会社 | 包含二醇结构的抗蚀剂下层膜形成用组合物 |
| WO2022039082A1 (ja) * | 2020-08-17 | 2022-02-24 | Jsr株式会社 | 下層膜形成用組成物、下層膜、及び、リソグラフィープロセス |
| WO2022065374A1 (ja) | 2020-09-28 | 2022-03-31 | 日産化学株式会社 | フルオロアルキル基を有する有機酸またはその塩を含むレジスト下層膜形成組成物 |
| WO2022196485A1 (ja) * | 2021-03-19 | 2022-09-22 | Jsr株式会社 | 半導体基板の製造方法及びレジスト下層膜形成用組成物 |
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| US7544750B2 (en) * | 2005-10-13 | 2009-06-09 | International Business Machines Corporation | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
| CN101523291A (zh) * | 2006-10-12 | 2009-09-02 | 日产化学工业株式会社 | 使用通过光交联固化形成的抗蚀剂下层膜的半导体装置的制造方法 |
| JP4745298B2 (ja) * | 2007-06-18 | 2011-08-10 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
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