WO2017086213A1 - レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物 - Google Patents
レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物 Download PDFInfo
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- WO2017086213A1 WO2017086213A1 PCT/JP2016/083116 JP2016083116W WO2017086213A1 WO 2017086213 A1 WO2017086213 A1 WO 2017086213A1 JP 2016083116 W JP2016083116 W JP 2016083116W WO 2017086213 A1 WO2017086213 A1 WO 2017086213A1
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- underlayer film
- resist underlayer
- forming composition
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- 0 C*(C)CC(*)(*(C)C)C(O*NC(ON=C(*)*)=O)=O Chemical compound C*(C)CC(*)(*(C)C)C(O*NC(ON=C(*)*)=O)=O 0.000 description 4
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
- C08F220/343—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate in the form of urethane links
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
- C08F220/36—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate containing oxygen in addition to the carboxy oxygen, e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/38—Esters containing sulfur
- C08F220/385—Esters containing sulfur and containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
- C09D167/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
- C09D167/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/38—Esters containing sulfur
- C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
- C08G63/16—Dicarboxylic acids and dihydroxy compounds
- C08G63/18—Dicarboxylic acids and dihydroxy compounds the acids or hydroxy compounds containing carbocyclic rings
- C08G63/181—Acids containing aromatic rings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Definitions
- the present invention relates to an additive added to a resist underlayer film forming composition, and more particularly to an additive for the purpose of improving the adhesion between a resist underlayer film and a resist pattern. Furthermore, the present invention relates to a resist underlayer film forming composition for lithography containing the additive, and particularly a resist underlayer film for lithography that is excellent in applicability to a substrate even when a thin resist underlayer film (for example, 25 nm or less) is formed. The present invention relates to a film-forming composition.
- Patent Document 1 That is, by using a resist underlayer film forming composition containing a polar site such as a lactone structure, adhesion to a resist pattern is improved, and it is expected to prevent the resist pattern from collapsing even in a fine resist pattern. .
- the resist pattern can be obtained only by including a lactone structure as the resist underlayer film forming composition. It is not enough to prevent collapse.
- Patent Document 2 discloses that the surface state of the resist underlayer film is modified to a basic state, and the skirt shape of the resist pattern becomes an undercut shape.
- the additive for resist underlayer film forming composition which can suppress is described.
- Patent Document 3 discloses an additive for a resist underlayer film forming composition that can suppress the bottom shape of a resist pattern from becoming a footing shape by segregating an additive component near the surface of the resist underlayer film.
- Patent Document 4 the surface state of the resist underlayer film is modified to be hydrophobic, the Laplace force when the resist pattern is developed and rinsed with pure water is reduced, and the adhesion of the resist pattern to the resist underlayer film is disclosed.
- Patent Document 5 discloses a resist pattern forming method in which an unexposed portion of the resist film is removed using a solvent capable of dissolving the resist film, and the exposed portion of the resist film is left as a resist pattern.
- An additive for resist underlayer film forming composition is described that can adjust the acidity in the vicinity of the surface to make the cross-sectional shape of the resist pattern straight, and at the same time improve the adhesion of the resist pattern to the resist underlayer film. ing.
- Patent Document 6 describes a resist underlayer film forming composition for lithography containing a copolymer having a structural unit having a sulfo group introduced at its terminal, a crosslinking agent, and a solvent.
- the invention described in Patent Document 6 has an effect of suppressing the generation of sublimates derived from the crosslinking catalyst component when forming the resist underlayer film, and has a good shape having almost no bottom shape at the bottom. It is possible to provide a resist underlayer film capable of forming the resist pattern.
- the present invention adds the surface of the resist underlayer film formed from the resist underlayer film forming composition by adding it to the resist underlayer film forming composition.
- An object of the present invention is to provide an additive for a resist underlayer film forming composition that is modified to a surface state that crosslinks with a component of a resist material. Reforming the surface of the resist underlayer film to a surface state that crosslinks with the components of the resist material means that the resist underlayer film is formed by applying a resist underlayer film forming composition containing additives onto the substrate and baking. And transferring the additive to the surface of the film.
- a first aspect of the present invention is an additive for a resist underlayer film forming composition containing a copolymer having a structural unit represented by the following formulas (1) to (3).
- R 1 independently represents a hydrogen atom or a methyl group
- R 2 represents an alkylene group having 1 to 3 carbon atoms
- A represents a protecting group
- R 3 represents a 4-membered ring to a 7-membered ring
- R 4 represents an organic group having a lactone skeleton, an adamantane skeleton, a tricyclodecane skeleton or a norbornane skeleton, wherein R 4 has at least one hydrogen atom substituted with a fluoro group, and further has at least one hydroxy group as a substituent.
- It represents a linear, branched or cyclic organic group having 1 to 12 carbon atoms.
- the copolymer may further have a structural unit represented by the following formula (4).
- R 1 has the same definition as R 1 in formula (1), formula (2) and formula (3), and X represents a direct bond or a —C ( ⁇ O) O—R 5 — group.
- X represents a direct bond or a —C ( ⁇ O) O—R 5 — group.
- R 6 is hydrogen Represents an atom, a methyl group, a methoxy group or a halogeno group.
- the structural unit represented by the formula (4) is, for example, a structural unit represented by the following formula (4a) or a structural unit represented by the following formula (4b). (In the formula, R 1 , R 5 and R 6 have the same definitions as R 1 , R 5 and R 6 in the formula (4)).
- the structural unit represented by the formula (1) is, for example, a structural unit represented by the following formula (1a), a structural unit represented by the following formula (1b), a structural unit represented by the following formula (1c), or It is a structural unit represented by the following formula (1d).
- R 1 and R 2 are the same as defined for R 1 and R 2 in the formula (1), two R 7 each independently represent a hydrogen atom, a methyl group or an ethyl group, R 8 is Represents a methyl group, b represents an integer of 0 to 3, R 9 represents a linear or branched alkyl group having 1 to 6 carbon atoms, or a linear or branched chain having 1 to 6 carbon atoms R 10 represents a linear or branched alkoxy group having 1 to 6 carbon atoms, and R 11 represents a hydrogen atom or a linear or branched group having 2 to 6 carbon atoms. Represents a chain-like alkoxycarbonyl group.
- the copolymer may have a structural unit represented by the following formula (5) instead of the structural unit represented by the formula (2).
- R 1 is the formula (1), has the same meaning as R 1 of formula (2) and (3), Y represents -O- group or a -NH- group, R 12 is at least one
- a hydrogen atom may be substituted with a fluoro group or a chloro group, and represents a linear or branched hydroxyalkyl group having 1 to 12 carbon atoms which may have a phenoxy group as a substituent.
- the weight average molecular weight of the copolymer is, for example, 1500 to 20000, preferably 3000 to 15000.
- the weight average molecular weight is less than 1500, the solvent resistance of the resist underlayer film formed from the resist underlayer film forming composition containing the copolymer as an additive cannot be obtained, while the weight average molecular weight is more than 20000.
- the solubility of the copolymer in a solvent is deteriorated.
- a structural unit represented by the following formula (6) and the following formula (7) which are different from the additive for the resist underlayer film forming composition and the copolymer used for the additive.
- the content of the copolymer used in the additive is 3 to 40 parts by mass with respect to 100 parts by mass of the resin.
- a resist underlayer film forming composition for lithography wherein Q 1 and Q 2 are each independently a divalent organic group having a linear or branched hydrocarbon group having 1 to 13 carbon atoms, or a divalent having an alicyclic hydrocarbon ring.
- the aromatic hydrocarbon ring and the heterocyclic ring may have at least one substituent.
- the copolymer used for the additive for a resist underlayer film forming composition is preferably contained in an amount of 5 to 30 parts by mass with respect to 100 parts by mass of the resin.
- the addition amount of the copolymer is less than 3 parts by mass, the adhesion of the resist pattern cannot be expressed.
- the addition amount of the copolymer is more than 40 parts by mass, solvent resistance cannot be obtained after the resist underlayer film is cured.
- the resist underlayer film forming composition for lithography is applied on a substrate and baked to form a resist underlayer film having a thickness of 1 nm to 25 nm.
- a resist solution is applied on the resist underlayer film.
- a step of applying and heating to form a resist film a step of exposing the resist film through a photomask with radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, and extreme ultraviolet light; and a developer after the exposure
- a method for forming a resist pattern including a step of developing by.
- the additive is transferred to the surface of the resist underlayer film by applying the resist underlayer film forming composition to which the additive according to the present invention is added to the lithography process.
- the surface of the resist underlayer film has an isocyanate group blocked by a protective group derived from the structural unit represented by the formula (1) of the copolymer used for the additive.
- an isocyanate group (—N ⁇ C ⁇ O) generated by deprotection of the protective group chemically bonds with a component of the resist material during heating when forming a resist film on the resist underlayer film. . Therefore, the adhesion between the resist underlayer film and the resist pattern is improved, and as a result, the resist pattern can be prevented from falling.
- the copolymer used for the additive for a resist underlayer film forming composition according to the first aspect of the present invention is a copolymer having a structural unit represented by the above formula (1) to formula (3), A copolymer further having a structural unit represented by the formula (4) in addition to the structural unit represented by the formula (1) to the formula (3), or represented by the formula (2) in the copolymer It is a copolymer having a structural unit represented by the formula (5) instead of the structural unit.
- the structural unit represented by the formula (1) has an isocyanate group blocked by a protective group, and the protective group is deprotected by heating to produce an isocyanate group.
- Examples of such a structural unit include structural units represented by the following formulas (1-1) to (1-20).
- Examples of the structural unit represented by the formula (2) include structural units represented by the following formulas (2-1) to (2-16).
- R 3 of the structural unit represented by the formula (2) an organic group having a skeleton (cyclic structure) introduced into the polymer in the resist solution is selected.
- Examples of the structural unit represented by the formula (3) include structural units represented by the following formulas (3-1) to (3-6).
- the structural unit represented by the formula (3) serves as a site for transferring the copolymer having the structural unit to the surface of the resist underlayer film.
- Examples of the structural unit represented by the formula (4) include structural units represented by the following formulas (4-1) to (4-4).
- the following formulas (4-1) to (4-4) show only examples in which R 6 of the structural unit represented by the formula (4) represents a hydrogen atom or a methyl group, but R 6 represents a halogeno group.
- the halogeno group is selected from the group consisting of a fluoro group, a chloro group, a bromo group and an iodo group.
- the structural unit represented by the formula (4) is a photoacid generating site.
- Examples of the monomer that forms the structural unit represented by the formula (5) include 2-hydroxypropyl (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, and 2-hydroxy-3-chloropropyl. (Meth) acrylate, N- (2-hydroxypropyl) (meth) acrylamide, and 3- (perfluorobutyl) -2-hydroxypropyl (meth) acrylate.
- Examples of the structural unit represented by the formula (5) include structural units represented by the following (5-1) to formula (5-10).
- the resist underlayer film forming composition for lithography according to the second aspect of the present invention is different from the copolymer in the structural unit represented by the formula (6) and the structural unit represented by the formula (7).
- a resin having The resin may further have a structure represented by the following formula (8) at the end of the polymer chain.
- R 13, R 14 and R 15 each independently represent a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 13, a halogeno group or a hydroxy group, wherein R 13, At least one of R 14 and R 15 represents the alkyl group, Ar represents an aromatic hydrocarbon ring or an alicyclic hydrocarbon ring, and two carbonyl groups are each adjacent to the ring represented by Ar 2 Z represents a linear or branched alkyl group having 1 to 6 carbon atoms which may have an alkoxy group having 1 to 3 carbon atoms as a substituent. )
- the resin is not particularly limited as long as it is a polymer used for the resist underlayer film forming composition.
- a polymer having two structural units represented by the following formula and a polymer having two structural units represented by the following formula and a terminal structure can be mentioned.
- the resist underlayer film forming composition further includes a crosslinking agent.
- the crosslinking agent include hexamethoxymethyl melamine, tetramethoxymethyl benzoguanamine, 1,3,4,6-tetrakis (methoxymethyl) glycoluril (POWDERLINK (registered trademark) 1174), 1,3,4,6- Tetrakis (butoxymethyl) glycoluril, 1,3,4,6-tetrakis (hydroxymethyl) glycoluril, 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea and 1,1,3,3-tetrakis (methoxymethyl) urea.
- the content ratio of the crosslinking agent is, for example, 1% by mass to 30% by mass with respect to the resin.
- the resist underlayer film forming composition further contains an organic acid.
- the organic acid is a catalyst component that promotes a crosslinking reaction.
- sulfonic acid compounds and carboxylic acid compounds such as acid, 4-phenolsulfonic acid, methyl 4-phenolsulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, citric acid, benzoic acid, and hydroxybenzoic acid.
- These organic acids may be contained alone or in combinations of two or more.
- the content ratio of the organic acid is, for example, 0.1% by mass to 20% by mass with respect to the crosslinking agent.
- the resist underlayer film forming composition further contains a solvent.
- the solvent include propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether, propylene glycol monopropyl ether, methyl ethyl ketone, ethyl lactate, cyclohexanone, ⁇ -butyrolactone, and N-methyl.
- Examples thereof include pyrrolidone and a mixture of two or more selected from these solvents.
- the ratio of the solvent is, for example, 50% by mass to 99.5% by mass with respect to the resist underlayer film forming composition.
- the additive for resist underlayer film forming composition may contain the above solvent, and in this case, the ratio of the solvent is, for example, 50% by mass to 95% by mass with respect to the additive for resist underlayer film forming composition. It is.
- the resist underlayer film forming composition may further contain a surfactant as necessary.
- the surfactant is an additive for improving the coating property of the resist underlayer film forming composition to the substrate, and a known surfactant such as a nonionic surfactant or a fluorine surfactant is used. it can.
- Specific examples of the surfactant include, for example, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, and polyoxyethylene octylphenyl ether.
- Polyoxyethylene alkylaryl ethers such as polyoxyethylene nonylphenyl ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate Sorbitan fatty acid esters such as sorbitan tristearate, polyoxyethylene sorbitan monolaurate, polyoxy Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as tylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, Ftop [registered trademark] ] EF301, EF303, EF352 (Mitsubishi Materials Electronics Chemical Co., Ltd.), MegaFuck [registered trademark] F171, F173, R-30, R-40, R-40, LM (DIC Corporation)
- surfactants may be contained alone or in combinations of two or more.
- the ratio of the surfactant is, for example, 0.1% by mass to 5% by mass with respect to the resin, and preferably 0.2% by mass to 3% by mass.
- a substrate used in the manufacture of a precision integrated circuit element for example, a semiconductor substrate such as a silicon wafer coated with a silicon oxide film, a silicon nitride film or a silicon oxynitride film, a silicon nitride substrate, a quartz substrate, a glass substrate (no (Including alkali glass, low alkali glass, crystallized glass), glass substrate on which an ITO film is formed]
- the resist underlayer film forming composition for lithography of the present invention is applied on a glass substrate on which an ITO film is formed by an appropriate application method such as a spinner or coater. Thereafter, the resist underlayer film is produced by baking and curing using a heating means such as a hot plate.
- the conditions for baking after coating are appropriately selected from the range of, for example, a baking temperature of 80 to 250 ° C. and a baking time of 0.3 to 60 minutes, and preferably 150 to 250 ° C. and 0.5 to 5 minutes. It is.
- a crosslinking structure such as a hydroxyl group in the structural unit of the polymer reacts with a crosslinking agent to form a crosslinked structure.
- the crosslinking density of the crosslinked polymer can be increased by crosslinking the polymer contained in the resist underlayer film forming composition for lithography of the present invention.
- the thickness of the resist underlayer film is, for example, 0.001 ⁇ m (1 nm) to 0.025 ⁇ m (25 nm), and preferably 0.003 ⁇ m (3 nm) to 0.01 ⁇ m (10 nm).
- the resist film is formed by a general method, that is, by applying a resist solution onto the resist underlayer film and baking.
- the resist solution to be applied is not particularly limited as long as it is sensitive to, for example, KrF excimer laser, ArF excimer laser, EUV, or electron beam, and either negative type or positive type can be used.
- Usable resist solutions include, for example, Sumitomo Chemical Co., Ltd .; trade names PAR710, PAR855, JSR Corporation; trade names AR2772JN, Shin-Etsu Chemical Co., Ltd .; trade names SEPR 430, Dow Chemical Company ( Manufactured by former ROHM & Haas Electronic Materials); trade name APEX-X.
- the resist film formed on the upper layer of the resist lower layer film is exposed through a predetermined mask (reticle).
- a predetermined mask for the exposure, for example, a KrF excimer laser, an ArF excimer laser, or EUV can be used. However, in the case of electron beam exposure, a mask (reticle) is not required.
- post-exposure heating PEB: Post Exposure Bake
- the conditions for the post-exposure heating are appropriately selected from the range of a heating temperature of 80 ° C. to 150 ° C. and a heating time of 0.3 minutes to 60 minutes.
- a good resist pattern is obtained by developing, rinsing and drying after exposure.
- an alkaline aqueous solution or an organic solvent can be used as the developer for the resist film.
- alkaline aqueous solutions include aqueous solutions of inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, and primary amines such as ethylamine and n-propylamine.
- Aqueous solutions aqueous solutions of secondary amines such as diethylamine and di-n-butylamine, aqueous solutions of tertiary amines such as triethylamine and methyldiethylamine, aqueous solutions of alcoholamines such as dimethylethanolamine and triethanolamine, Examples include aqueous solutions of quaternary ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, and aqueous solutions of cyclic amines such as pyrrole and piperidine.
- an appropriate amount of an alcohol such as isopropyl alcohol or a nonionic surfactant may be added to the alkaline aqueous solution.
- a preferred developer is an aqueous solution of a quaternary ammonium salt, more preferably an aqueous solution of tetramethylammonium hydroxide.
- organic solvent used as the developer examples include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxy acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether Acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-
- the resist underlayer film exposed by developing and removing the resist film in the above-described step is removed by dry etching, and a desired pattern can be formed on the substrate.
- the weight average molecular weights shown in the following Synthesis Examples 1 and 3 in the present specification are measurement results by gel permeation chromatography (hereinafter abbreviated as GPC in the present specification).
- GPC gel permeation chromatography
- a GPC apparatus manufactured by Tosoh Corporation was used for the measurement.
- the dispersity shown in the following synthesis examples of the present specification is calculated from the measured weight average molecular weight and number average molecular weight.
- the reaction vessel was purged with nitrogen and reacted at 135 ° C. for 4 hours to obtain a polymer-containing solution.
- the solution containing the polymer does not cause white turbidity or the like even when cooled to room temperature, and has good solubility in propylene glycol monomethyl ether.
- the polymer in the solution had a weight average molecular weight of 4095 and a dispersity of 1.36 in terms of standard polystyrene.
- the polymer obtained in this synthesis example has a structural unit represented by the following formula (6-7) and a structural unit represented by the following formula (7-7), and is represented by the following formula (8-7). It corresponds to the resin having the structure to be formed at the end of the polymer chain and contained in the resist underlayer film forming composition of the present invention.
- the copolymer in the solution had a weight average molecular weight of 10012 and a dispersity of 2.52 in terms of standard polystyrene.
- the copolymer obtained in this synthesis example corresponds to the copolymer used for the additive for the resist underlayer film forming composition of the present invention.
- Example 3 A polymer having a structural unit represented by the following formula (6-1) and a structural unit represented by the following formula (7-1) obtained by Synthesis Example 1 described in International Publication No. 2005/098542. 1.17 g of the solution containing 21 g, 0.19 g of the solution containing 0.031 g of the polymer obtained in Synthesis Example 2 above, tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: POWDERLINK [registered Trademark] 1174) 0.52 g and p-toluenesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 0.0066 g were mixed, and 12.68 g of propylene glycol monomethyl ether and 5.91 g of propylene glycol monomethyl ether acetate were added to the mixture. Added and dissolved. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to
- Example 4 A polymer having a structural unit represented by the formula (6-1) and a structural unit represented by the formula (7-1) obtained by Synthesis Example 1 described in International Publication No. 2005/098542. 1.17 g of a solution containing 21 g, 0.18 g of a solution containing 0.031 g of the polymer obtained in Synthesis Example 2 above, tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Ltd., trade name: POWDERLINK [registered] Trademark] 1174) 0.052 g and p-toluenesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 0.0066 g are mixed, and 12.68 g of propylene glycol monomethyl ether and 5.91 g of propylene glycol monomethyl ether acetate are added and dissolved. It was. Thereafter, the mixture was filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m to
- the resist underlayer film forming composition prepared in this comparative example does not contain the additive for the resist underlayer film forming composition of the present invention.
- the resist underlayer film forming composition prepared in this comparative example does not contain the additive for the resist underlayer film forming composition of the present invention.
- the L / S line width formed as a result of increasing the exposure amount irradiated to the L / S space portion was gradually reduced.
- the line width of the line pattern in the previous stage where the line pattern collapsed was the minimum dimension before collapse, and was used as an index of adhesion of the resist pattern. Tables 1 and 2 show the results. This suggests that the smaller the value of the dimension before collapse, the higher the adhesion between the resist underlayer film and the resist pattern.
- the line width of the special resist pattern is fine, a difference of 1 nm is significant. Therefore, it is extremely preferable that the minimum dimension before collapse is as small as 1 nm.
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Abstract
Description
(式中、R1はそれぞれ独立に水素原子又はメチル基を表し、R2は炭素原子数1乃至3のアルキレン基を表し、Aは保護基を表し、R3は4員環乃至7員環のラクトン骨格、アダマンタン骨格、トリシクロデカン骨格又はノルボルナン骨格を有する有機基を表し、R4は少なくとも1つの水素原子がフルオロ基で置換され、更に置換基として少なくとも1つのヒドロキシ基を有してもよい炭素原子数1乃至12の直鎖状、分岐鎖状又は環状の有機基を表す。)
(式中、R1は前記式(1)、式(2)及び式(3)のR1の定義と同義であり、Xは直接結合又は-C(=O)O-R5-基を表し、該-C(=O)O-R5-基を構成するR5は炭素原子数1乃至3のアルキレン基を表し、該アルキレン基は硫黄原子と結合するものであり、R6は水素原子、メチル基、メトキシ基又はハロゲノ基を表す。)
(式中、R1、R5及びR6は前記式(4)のR1、R5及びR6の定義と同義である。)
(式中、R1及びR2は前記式(1)のR1及びR2の定義と同義であり、2つのR7はそれぞれ独立に水素原子、メチル基又はエチル基を表し、R8はメチル基を表し、bは0乃至3の整数を表し、R9は炭素原子数1乃至6の直鎖状もしくは分岐鎖状のアルキル基、又は炭素原子数1乃至6の直鎖状もしくは分岐鎖状のアルコキシアルキル基を表し、R10は炭素原子数1乃至6の直鎖状又は分岐鎖状のアルコキシ基を表し、R11は水素原子、又は炭素原子数2乃至6の直鎖状もしくは分岐鎖状のアルコキシカルボニル基を表す。)
(式中、R1は前記式(1)、式(2)及び式(3)のR1と同義であり、Yは-O-基又は-NH-基を表し、R12は少なくとも1つの水素原子がフルオロ基又はクロロ基で置換されてもよく、置換基としてフェノキシ基を有してもよい炭素原子数1乃至12の直鎖状又は分岐鎖状のヒドロキシアルキル基を表す。)
(式中、Q1及びQ2はそれぞれ独立に、炭素原子数1乃至13の直鎖状もしくは分岐鎖状の炭化水素基を有する二価の有機基、脂環式炭化水素環を有する二価の有機基、芳香族炭化水素環を有する二価の有機基、又は窒素原子を1乃至3つ含む複素環を有する二価の有機基を表し、前記炭化水素基、前記脂環式炭化水素環、前記芳香族炭化水素環及び前記複素環は置換基を少なくとも1つ有してもよい。)
本発明の第1の態様に係るレジスト下層膜形成組成物用添加剤に使用される共重合体は、前記式(1)乃至式(3)で表される構造単位を有する共重合体、前記式(1)乃至式(3)で表される構造単位に加えて前記式(4)で表される構造単位をさらに有する共重合体、又は前記共重合体において前記式(2)で表される構造単位に替えて前記式(5)で表される構造単位を有する共重合体である。
本発明の第2の態様に係るリソグラフィー用レジスト下層膜形成組成物は、前記共重合体とは異なる、前記式(6)で表される構造単位及び前記式(7)で表される構造単位を有する樹脂を含む。当該樹脂は、ポリマー鎖の末端に下記式(8)で表される構造をさらに有してもよい。
(式中、R13、R14及びR15はそれぞれ独立に、水素原子、炭素原子数1乃至13の直鎖状もしくは分岐鎖状のアルキル基、ハロゲノ基又はヒドロキシ基を表し、前記R13、R14及びR15の少なくとも1つは前記アルキル基を表し、Arは芳香族炭化水素環又は脂環式炭化水素環を表し、2つのカルボニル基はそれぞれ前記Arで表される環の隣接する2つの炭素原子と結合するものであり、Zは炭素原子数1乃至3のアルコキシ基を置換基として有してもよい炭素原子数1乃至6の直鎖状又は分岐鎖状のアルキル基を表す。)
前記レジスト下層膜形成組成物は、架橋剤をさらに含むものである。前記架橋剤としては、例えば、ヘキサメトキシメチルメラミン、テトラメトキシメチルベンゾグアナミン、1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(POWDERLINK〔登録商標〕1174)、1,3,4,6-テトラキス(ブトキシメチル)グリコールウリル、1,3,4,6-テトラキス(ヒドロキシメチル)グリコールウリル、1,3-ビス(ヒドロキシメチル)尿素、1,1,3,3-テトラキス(ブトキシメチル)尿素及び1,1,3,3-テトラキス(メトキシメチル)尿素が挙げられる。前記架橋剤の含有割合は、前記樹脂に対し、例えば1質量%乃至30質量%である。
前記レジスト下層膜形成組成物は、さらに有機酸を含むものである。前記有機酸は、架橋反応を促進する触媒成分であり、例えば、p-トルエンスルホン酸、トリフルオロメタンスルホン酸、ピリジニウム-p-トルエンスルホネート、サリチル酸、カンファースルホン酸、5-スルホサリチル酸、4-クロロベンゼンスルホン酸、4-フェノールスルホン酸、4-フェノールスルホン酸メチル、ベンゼンジスルホン酸、1-ナフタレンスルホン酸、クエン酸、安息香酸、ヒドロキシ安息香酸等の、スルホン酸化合物及びカルボン酸化合物が挙げられる。これらの有機酸は単独で含有してもよいし、2種以上の組み合わせで含有することもできる。前記有機酸の含有割合は、前記架橋剤に対し、例えば0.1質量%乃至20質量%である。
前記レジスト下層膜形成組成物は、さらに溶剤を含むものである。前記溶剤としては、例えば、プロピレングリコールモノメチルエーテル(PGME)、プロピレングリコールモノメチルエーテルアセテート(PGMEA)、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、メチルエチルケトン、乳酸エチル、シクロヘキサノン、γ-ブチロラクトン、N-メチルピロリドン、及びこれらの溶剤から選択された2種以上の混合物が挙げられる。前記溶剤の割合は、前記レジスト下層膜形成組成物に対し、例えば50質量%乃至99.5質量%である。前記レジスト下層膜形成組成物用添加剤は上記溶剤を含有してもよく、その場合、当該溶剤の割合は、前記レジスト下層膜形成組成物用添加剤に対し、例えば50質量%乃至95質量%である。
前記レジスト下層膜形成組成物は、必要に応じて界面活性剤をさらに含有してもよい。界面活性剤は、基板に対する前記レジスト下層膜形成組成物の塗布性を向上させるための添加物であり、ノニオン系界面活性剤、フッ素系界面活性剤のような公知の界面活性剤を用いることができる。前記界面活性剤の具体例としては、例えば、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類、ポリオキシエチレンオクチルフェニルエーテル、ポリオキシエチレンノニルフェニルエーテル等のポリオキシエチレンアルキルアリールエーテル類、ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー類、ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリオレエート、ソルビタントリステアレート等のソルビタン脂肪酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリオキシエチレンソルビタン脂肪酸エステル類等のノニオン系界面活性剤、エフトップ〔登録商標〕EF301、同EF303、同EF352(三菱マテリアル電子化成(株)製)、メガファック〔登録商標〕F171、同F173、同R-30、同R-40、同R-40-LM(DIC(株)製)、フロラードFC430、同FC431(住友スリーエム(株)製)、アサヒガード〔登録商標〕AG710、サーフロン〔登録商標〕S-382、同SC101、同SC102、同SC103、同SC104、同SC105、同SC106(旭硝子(株)製)等のフッ素系界面活性剤、オルガノシロキサンポリマーKP341(信越化学工業(株)製)を挙げることができる。これらの界面活性剤は単独で含有してもよいし、2種以上の組合せで含有することもできる。前記レジスト下層膜形成組成物が界面活性剤を含有する場合、前記界面活性剤の割合は、前記樹脂に対し、例えば0.1質量%乃至5質量%であり、好ましくは0.2質量%乃至3質量%である。
テレフタル酸ジグリシジルエステル(ナガセケムテックス(株)製、商品名:デナコール〔登録商標〕EX711)100.00g、5-ヒドロキシイソフタル酸(東京化成工業(株)製)63.32g、4-tert-ブチルフタル酸無水物(東京化成工業(株)製)15.97g及びベンジルトリエチルアンモニウムクロリド(東京化成工業(株)製)3.96gを、プロピレングリコールモノメチルエーテル733.01gに加え溶解させた。反応容器を窒素置換後、135℃で4時間反応させ、ポリマーを含む溶液を得た。該ポリマーを含む溶液は、室温に冷却しても白濁等を生じることはなく、プロピレングリコールモノメチルエーテルに対する溶解性は良好である。得られたポリマーを含む溶液に対しGPC分析を行ったところ、当該溶液中のポリマーは、標準ポリスチレン換算にて重量平均分子量4095、分散度は1.36であった。本合成例で得られたポリマーは、下記式(6-7)で表される構造単位及び下記式(7-7)で表される構造単位を有すると共に、下記式(8-7)で表される構造をポリマー鎖の末端に有し、本発明のレジスト下層膜形成組成物に含まれる樹脂に該当する。
メタクリル酸2-(O-[1’-メチルプロピリデンアミノ]カルボキシアミノ)エチル10.00g(昭和電工(株)製、商品名:カレンズ〔登録商標〕MOI-BM)、ヒドロキシプロピルメタクリレート3.57g(東京化成工業(株)製)、及びトリフルオロエチルメタクリレート2.78g(大阪有機工業(株)製)にプロピレングリコールモノメチルエーテル38.23gを加えた後、フラスコ内を窒素にて置換し70℃まで昇温した。重合開始剤として、プロピレングリコールモノメチルエーテル33.89gに溶解したアゾビスイソブチロニトリル(AIBN)0.68gを前記フラスコ内に窒素加圧下添加し、24時間反応させ、下記式(1-2)で表される構造単位、下記式(5-1)で表される構造単位及び下記式(3-2)で表される構造単位を有する共重合体を含む溶液が得られた。得られた共重合体を含む溶液に対しGPC分析を行ったところ、当該溶液中の共重合体は、標準ポリスチレン換算にて重量平均分子量9465、分散度は2.37であった。本合成例で得られた共重合体は、本発明のレジスト下層膜形成組成物用添加剤に使用される共重合体に該当する。
メタクリル酸2-(O-[1’-メチルプロピリデンアミノ]カルボキシアミノ)エチル6.82g(昭和電工(株)製、商品名:カレンズ〔登録商標〕MOI-BM)、メタクリル酸1,1,1,3,3,3-ヘキサフルオロイソプロピル4.43g(東京化成工業(株)製)、アダマンチルメタクリレート6.20g(大阪有機工業(株)製)、及び前記特許文献5の合成例3によって得られた2-トシルエチルメタクリレート5.03gにプロピレングリコールモノメチルエーテル23.73gを加えた後、フラスコ内を窒素にて置換し70℃まで昇温した。重合開始剤として、プロピレングリコールモノメチルエーテル38.51gに溶解したアゾビスイソブチロニトリル(AIBN)0.77gを前記フラスコ内に窒素加圧下添加し、24時間反応させ、下記式(1-2)で表される構造単位、下記式(2-9)で表される構造単位、下記式(3-4)で表される構造単位及び下記式(4-2)で表される構造単位を有する共重合体を含む溶液が得られた。得られた共重合体を含む溶液のGPC分析を行ったところ、当該溶液中の共重合体は、標準ポリスチレン換算にて重量平均分子量10012、分散度は2.52であった。本合成例で得られた共重合体は、本発明のレジスト下層膜形成組成物用添加剤に使用される共重合体に該当する。
本明細書の合成例1で得られた、ポリマー0.14gを含む溶液0.87gに、上記合成例2で得られた、共重合体0.0021gを含む溶液0.12g、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.035g、及びピリジニウムp-トルエンスルホナート0.0043g(東京化成工業(株)製)を混合し、当該混合物にプロピレングリコールモノメチルエーテル5.04g及びプロピレングリコールモノメチルエーテルアセテート13.86gを加え溶解させた。その後、孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
上記合成例1で得られた、ポリマー0.14gを含む溶液0.87gに、上記合成例3で得られた、共重合体0.021gを含む溶液0.12g、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.035g、及びピリジニウムp-トルエンスルホナート0.0044g(東京化成工業(株)製)を混合し、当該混合物にプロピレングリコールモノメチルエーテル5.09g及びプロピレングリコールモノメチルエーテルアセテート13.86gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
国際公開第2005/098542号に記載の合成例1により得られた、下記式(6-1)で表される構造単位及び下記式(7-1)で表される構造単位を有するポリマー0.21gを含む溶液1.17gに、上記合成例2で得られた、重合体0.031gを含む溶液0.19g、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.52g、及びp-トルエンスルホン酸(東京化成工業(株)製)0.0066gを混合し、当該混合物にプロピレングリコールモノメチルエーテル12.68g及びプロピレングリコールモノメチルエーテルアセテート5.91gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
国際公開第2005/098542号に記載の合成例1により得られた、前記式(6-1)で表される構造単位及び前記式(7-1)で表される構造単位を有するポリマー0.21gを含む溶液1.17gに、上記合成例2で得られた、重合体0.031gを含む溶液0.18g、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.052g、及びp-トルエンスルホン酸(東京化成工業(株)製)0.0066gを混合し、プロピレングリコールモノメチルエーテル12.68g及びプロピレングリコールモノメチルエーテルアセテート5.91gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。
本明細書の合成例1で得られた、ポリマー0.16gを含む溶液0.97gに、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.039g及びピリジニウムp-トルエンスルホナート0.0049g(東京化成工業(株)製)を混合し、プロピレングリコールモノメチルエーテル5.12g及びプロピレングリコールモノメチルエーテルアセテート13.86gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。本比較例で調製されたレジスト下層膜形成組成物は、本発明のレジスト下層膜形成組成物用添加剤を含まない。
国際公開第2005/098542号に記載の合成例1により得られた、前記式(6-1)で表される構造単位及び前記式(7-1)で表される構造単位を有するポリマー0.16gを含む溶液0.87gに、テトラメトキシメチルグリコールウリル(日本サイテックインダストリーズ(株)製、商品名:POWDERLINK〔登録商標〕1174)0.039g、及びp-トルエンスルホン酸(東京化成工業(株)製)0.049gを混合し、プロピレングリコールモノメチルエーテル13.15g及びプロピレングリコールモノメチルエーテルアセテート5.94gを加え溶解させた。その後孔径0.05μmのポリエチレン製ミクロフィルターを用いてろ過して、リソグラフィー用レジスト下層膜形成組成物とした。本比較例で調製されたレジスト下層膜形成組成物は、本発明のレジスト下層膜形成組成物用添加剤を含まない。
実施例1乃至実施例4、比較例1及び比較例2で調製されたリソグラフィー用レジスト下層膜形成組成物を、それぞれ、スピナーにより、半導体基板であるシリコンウェハー上に塗布した。そのシリコンウェハーをホットプレート上に配置し、205℃で1分間ベークし、膜厚25nmのレジスト下層膜を形成した。これらのレジスト下層膜を、プロピレングリコールモノメチルエーテル70質量%及びプロピレングリコールモノメチルエーテルアセテート30質量%から成る溶剤に浸漬し、その溶剤に不溶であるか否かの確認実験を行った。その結果、浸漬前と浸漬後とで膜厚は変化しなかった。
実施例1乃至実施例4、比較例1及び比較例2で調製されたリソグラフィー用レジスト下層膜形成組成物を、それぞれ、スピナーにより、SiON膜が蒸着されたシリコンウェハーに塗布した。そのウェハーをホットプレート上に配置し、205℃で1分間ベークし、膜厚5nmのレジスト下層膜を形成した。これらのレジスト下層膜の上に、市販のフォトレジスト溶液(住友化学(株)製、商品名:PAR855)をスピナーにより塗布し、ホットプレート上で105℃にて60秒間加熱してフォトレジスト膜(膜厚0.10μm)を形成した。
Claims (8)
- 前記式(1)で表される構造単位は下記式(1a)で表される構造単位、下記式(1b)で表される構造単位、下記式(1c)で表される構造単位又は下記式(1d)で表される構造単位である請求項1乃至請求項3のうちいずれか一項に記載のレジスト下層膜形成組成物用添加剤。
(式中、R1及びR2は請求項1に記載の式(1)におけるR1及びR2の定義と同義であり、2つのR7はそれぞれ独立に水素原子、メチル基又はエチル基を表し、R8はメチル基を表し、bは0乃至3の整数を表し、R9は炭素原子数1乃至6の直鎖状もしくは分岐鎖状のアルキル基、又は炭素原子数1乃至6の直鎖状もしくは分岐鎖状のアルコキシアルキル基を表し、R10は炭素原子数1乃至6の直鎖状又は分岐鎖状のアルコキシ基を表し、R11は水素原子、又は炭素原子数2乃至6の直鎖状もしくは分岐鎖状のアルコキシカルボニル基を表す。) - 前記共重合体の重量平均分子量は1500乃至20000である、請求項1乃至請求項5のうちいずれか一項に記載のレジスト下層膜形成組成物用添加剤。
- 請求項1乃至請求項6のうちいずれか一項に記載のレジスト下層膜形成組成物用添加剤、前記添加剤に使用される共重合体とは異なる、下記式(6)で表される構造単位及び下記式(7)で表される構造単位を有する樹脂、有機酸、架橋剤並びに溶剤を含み、前記添加剤に使用される共重合体の含有量は前記樹脂100質量部に対し3質量部乃至40質量部である、リソグラフィー用レジスト下層膜形成組成物。
(式中、Q1及びQ2はそれぞれ独立に、炭素原子数1乃至13の直鎖状もしくは分岐鎖状の炭化水素基を有する二価の有機基、脂環式炭化水素環を有する二価の有機基、芳香族炭化水素環を有する二価の有機基、又は窒素原子を1乃至3つ含む複素環を有する二価の有機基を表し、前記炭化水素基、前記脂環式炭化水素環、前記芳香族炭化水素環及び前記複素環は置換基を少なくとも1つ有してもよい。) - 請求項7に記載のリソグラフィー用レジスト下層膜形成組成物を基板上に塗布しベークして厚さ1nm乃至25nmのレジスト下層膜を形成する工程、前記レジスト下層膜上にレジスト溶液を塗布し加熱してレジスト膜を形成する工程、フォトマスクを介して前記レジスト膜をKrFエキシマレーザー、ArFエキシマレーザー及び極端紫外線からなる群から選択される放射線により露光する工程、及び前記露光後に現像液によって現像する工程を含む、レジストパターンの形成方法。
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US10795261B2 (en) | 2020-10-06 |
JPWO2017086213A1 (ja) | 2018-09-06 |
CN108351593B (zh) | 2021-10-26 |
KR20180083852A (ko) | 2018-07-23 |
TW201730261A (zh) | 2017-09-01 |
CN108351593A (zh) | 2018-07-31 |
TWI681005B (zh) | 2020-01-01 |
US20190317405A1 (en) | 2019-10-17 |
KR102361878B1 (ko) | 2022-02-11 |
JP6497535B2 (ja) | 2019-04-10 |
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