JP5379211B2 - エピタキシャル構造体及びその製造方法 - Google Patents

エピタキシャル構造体及びその製造方法 Download PDF

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JP5379211B2
JP5379211B2 JP2011238667A JP2011238667A JP5379211B2 JP 5379211 B2 JP5379211 B2 JP 5379211B2 JP 2011238667 A JP2011238667 A JP 2011238667A JP 2011238667 A JP2011238667 A JP 2011238667A JP 5379211 B2 JP5379211 B2 JP 5379211B2
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carbon nanotube
layer
epitaxial
substrate
epitaxial layer
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JP2012209533A (ja
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洋 魏
守善 ▲ハン▼
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Hon Hai Precision Industry Co Ltd
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Hon Hai Precision Industry Co Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2011238667A 2011-03-29 2011-10-31 エピタキシャル構造体及びその製造方法 Active JP5379211B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110076903.4 2011-03-29
CN201110076903.4A CN102723407B (zh) 2011-03-29 2011-03-29 外延结构体的制备方法

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JP2012209533A JP2012209533A (ja) 2012-10-25
JP5379211B2 true JP5379211B2 (ja) 2013-12-25

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JP (1) JP5379211B2 (zh)
CN (1) CN102723407B (zh)
TW (1) TWI474966B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104952983B (zh) * 2014-03-26 2018-07-10 清华大学 外延结构的制备方法
CN104952988B (zh) * 2014-03-26 2017-07-07 清华大学 发光二极管的制备方法
CN104637795B (zh) * 2015-01-30 2018-03-30 北京大学 硅衬底上iii族氮化物外延薄膜的选区生长方法及结构
EP3404486B1 (en) * 2017-05-15 2021-07-14 IMEC vzw A method for forming a pellicle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326912A (ja) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd 無転位ＧａＮ基板の製造方法及びＧａＮ基材
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
WO2007081381A2 (en) * 2005-05-10 2007-07-19 The Regents Of The University Of California Spinodally patterned nanostructures
KR100663076B1 (ko) * 2005-08-31 2007-01-02 한국과학기술원 반도체 기판 상의 소정 영역에 탄소나노튜브를 형성시키는 방법, 이를 이용한 반도체 도선 형성방법 및 이를 이용하여 인덕터 소자 제조 방법
JP2008266064A (ja) * 2007-04-19 2008-11-06 Nichia Corp 半導体素子用基板、及びその製造方法
JP5276852B2 (ja) * 2008-02-08 2013-08-28 昭和電工株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板の製造方法
CN101820036B (zh) * 2009-02-27 2013-08-28 清华大学 一种发光二极管的制备方法
JP2010232464A (ja) * 2009-03-27 2010-10-14 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにレーザダイオード

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TWI474966B (zh) 2015-03-01
TW201238887A (en) 2012-10-01
CN102723407A (zh) 2012-10-10
JP2012209533A (ja) 2012-10-25
CN102723407B (zh) 2015-01-21

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