JP5379059B2 - SiC/Si複合材料の製造方法 - Google Patents
SiC/Si複合材料の製造方法 Download PDFInfo
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- JP5379059B2 JP5379059B2 JP2010080012A JP2010080012A JP5379059B2 JP 5379059 B2 JP5379059 B2 JP 5379059B2 JP 2010080012 A JP2010080012 A JP 2010080012A JP 2010080012 A JP2010080012 A JP 2010080012A JP 5379059 B2 JP5379059 B2 JP 5379059B2
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- sic
- preform
- degreasing
- powder
- organic binder
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002131 composite material Substances 0.000 title claims description 14
- 239000000843 powder Substances 0.000 claims description 40
- 238000005238 degreasing Methods 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- 239000011230 binding agent Substances 0.000 claims description 25
- 238000011049 filling Methods 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 8
- 238000010079 rubber tapping Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000011800 void material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012643 polycondensation polymerization Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
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- Ceramic Products (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Description
Claims (2)
- SiC粉末のタップ充填率を68〜76%として、前記SiC粉末をタップした際にできる空隙の容積の25〜100体積%に有機バインダーの添加量を調整して、前記SiC粉末及び前記有機バインダーを含む混合物を準備する工程と、前記混合物を成形してプリフォームとする成形工程と、前記プリフォームを所定雰囲気で脱脂する脱脂工程と、脱脂した後の前記プリフォームに加工を施す加工工程と、Siを浸透させる浸透工程と、を含むSiC/Si複合材料の製造方法。
- 前記SiC粉末は、100μm以上の粒子を60%以上含む請求項1記載のSiC/Si複合材料の製造方法。
Priority Applications (1)
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JP2010080012A JP5379059B2 (ja) | 2010-03-31 | 2010-03-31 | SiC/Si複合材料の製造方法 |
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JP2010080012A JP5379059B2 (ja) | 2010-03-31 | 2010-03-31 | SiC/Si複合材料の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011207734A JP2011207734A (ja) | 2011-10-20 |
JP5379059B2 true JP5379059B2 (ja) | 2013-12-25 |
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JP2010080012A Active JP5379059B2 (ja) | 2010-03-31 | 2010-03-31 | SiC/Si複合材料の製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP5379059B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014108896A (ja) * | 2012-11-30 | 2014-06-12 | Nihon Ceratec Co Ltd | SiC/Si複合材料体及びその製造方法 |
JP6489775B2 (ja) * | 2014-08-21 | 2019-03-27 | 株式会社フジコー | SiC成形体の製造方法及びSiC成形体の加工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62162672A (ja) * | 1986-01-13 | 1987-07-18 | 信越化学工業株式会社 | 炭化けい素焼結体とその製造方法 |
JP4014254B2 (ja) * | 1997-07-18 | 2007-11-28 | 日本碍子株式会社 | Si濃度段階的変化型Si−SiC材料及びSi濃度段階的変化型SiC繊維強化Si−SiC複合材料並びにこれらの製造方法 |
JP4220598B2 (ja) * | 1998-08-26 | 2009-02-04 | 太平洋セメント株式会社 | 鋳造用金属−セラミックス複合材料の製造方法 |
JP4068496B2 (ja) * | 2003-04-14 | 2008-03-26 | Nec東芝スペースシステム株式会社 | 鏡面母材及びそれを用いた鏡体及び、鏡体を用いた光学装置 |
JP2005243773A (ja) * | 2004-02-25 | 2005-09-08 | Murata Mfg Co Ltd | 積層セラミック電子部品の製造方法 |
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2010
- 2010-03-31 JP JP2010080012A patent/JP5379059B2/ja active Active
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JP2011207734A (ja) | 2011-10-20 |
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