JP5376801B2 - 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 - Google Patents

少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 Download PDF

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JP5376801B2
JP5376801B2 JP2007507454A JP2007507454A JP5376801B2 JP 5376801 B2 JP5376801 B2 JP 5376801B2 JP 2007507454 A JP2007507454 A JP 2007507454A JP 2007507454 A JP2007507454 A JP 2007507454A JP 5376801 B2 JP5376801 B2 JP 5376801B2
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group
encapsulating layer
layer
encapsulating
light
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JP2007533140A (ja
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エイチ．ネグレイ ジェラルド
ターサ エリック
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Wolfspeed Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
JP2007507454A 2004-04-06 2005-04-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法 Expired - Fee Related JP5376801B2 (ja)

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US10/818,912 US7868343B2 (en) 2004-04-06 2004-04-06 Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US10/818,912 2004-04-06
PCT/US2005/011592 WO2005101909A1 (en) 2004-04-06 2005-04-05 Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same

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JP2011265534A Division JP2012089864A (ja) 2004-04-06 2011-12-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法

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JP5376801B2 true JP5376801B2 (ja) 2013-12-25

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JP2011265534A Pending JP2012089864A (ja) 2004-04-06 2011-12-05 少なくとも一つのカプセル化層がナノ粒子群を含む複数のカプセル化層を有する発光素子およびその形成方法

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US (2) US7868343B2 (enExample)
EP (1) EP1741315B1 (enExample)
JP (2) JP5376801B2 (enExample)
KR (2) KR101138540B1 (enExample)
AT (1) ATE415072T1 (enExample)
DE (1) DE602005011119D1 (enExample)
TW (1) TWI364115B (enExample)
WO (1) WO2005101909A1 (enExample)

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US7868343B2 (en) 2011-01-11
DE602005011119D1 (de) 2009-01-02
KR20070004023A (ko) 2007-01-05
EP1741315A1 (en) 2007-01-10
ATE415072T1 (de) 2008-12-15
KR20110112450A (ko) 2011-10-12
KR101138540B1 (ko) 2012-04-25
WO2005101909A1 (en) 2005-10-27
EP1741315B1 (en) 2008-11-19
US8946755B2 (en) 2015-02-03
JP2007533140A (ja) 2007-11-15
KR101225252B1 (ko) 2013-01-22
US20050224829A1 (en) 2005-10-13
US20110068362A1 (en) 2011-03-24
TWI364115B (en) 2012-05-11

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