JP5374749B2 - 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム - Google Patents

絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Download PDF

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Publication number
JP5374749B2
JP5374749B2 JP2008029477A JP2008029477A JP5374749B2 JP 5374749 B2 JP5374749 B2 JP 5374749B2 JP 2008029477 A JP2008029477 A JP 2008029477A JP 2008029477 A JP2008029477 A JP 2008029477A JP 5374749 B2 JP5374749 B2 JP 5374749B2
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Japan
Prior art keywords
plasma
insulating film
processing
film
range
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JP2008029477A
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Japanese (ja)
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JP2009188349A (ja
JP2009188349A5 (https=
Inventor
義郎 壁
淳一 北川
紀久夫 山部
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008029477A priority Critical patent/JP5374749B2/ja
Priority to TW098103865A priority patent/TWI445083B/zh
Priority to PCT/JP2009/052447 priority patent/WO2009099254A1/ja
Priority to KR1020107017596A priority patent/KR101248651B1/ko
Priority to US12/865,969 priority patent/US8034179B2/en
Publication of JP2009188349A publication Critical patent/JP2009188349A/ja
Publication of JP2009188349A5 publication Critical patent/JP2009188349A5/ja
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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2008029477A 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Expired - Fee Related JP5374749B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008029477A JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
TW098103865A TWI445083B (zh) 2008-02-08 2009-02-06 Insulation film formation method, the computer can read the memory media and processing system
PCT/JP2009/052447 WO2009099254A1 (ja) 2008-02-08 2009-02-06 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
KR1020107017596A KR101248651B1 (ko) 2008-02-08 2009-02-06 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템
US12/865,969 US8034179B2 (en) 2008-02-08 2009-02-06 Method for insulating film formation, storage medium from which information is readable with computer, and processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008029477A JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

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JP2009188349A JP2009188349A (ja) 2009-08-20
JP2009188349A5 JP2009188349A5 (https=) 2011-03-17
JP5374749B2 true JP5374749B2 (ja) 2013-12-25

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JP2008029477A Expired - Fee Related JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5813303B2 (ja) 2009-11-20 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP6419762B2 (ja) * 2016-09-06 2018-11-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6456893B2 (ja) 2016-09-26 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、記録媒体および基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE514181T1 (de) * 2000-03-13 2011-07-15 Tadahiro Ohmi Verfahren zur ausbildung eines dielektrischen films
JP2005303074A (ja) * 2004-04-13 2005-10-27 Renesas Technology Corp 薄膜形成装置および薄膜形成方法

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