JP5370979B2 - 半導体集積回路の製造方法 - Google Patents
半導体集積回路の製造方法 Download PDFInfo
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- JP5370979B2 JP5370979B2 JP2007106945A JP2007106945A JP5370979B2 JP 5370979 B2 JP5370979 B2 JP 5370979B2 JP 2007106945 A JP2007106945 A JP 2007106945A JP 2007106945 A JP2007106945 A JP 2007106945A JP 5370979 B2 JP5370979 B2 JP 5370979B2
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- wiring
- copper
- trench
- copper wiring
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Description
以下、本発明半導体集積回路装置及びその製造方法の好ましい実施形態を図面を用いて詳細に説明する。
Claims (1)
- 回路素子が形成された半導体基体と、前記半導体基体の主表面上に形成された絶縁層と、少なくとも前記絶縁層を利用して形成されたトレンチと、前記トレンチ内にめっき法によって形成された銅配線を備え、前記銅配線の線幅が70nm以下で、該銅配線の酸素濃度が3wt%以下であり、前記銅配線の前記トレンチの側面と平行な面における平均結晶粒径が配線幅の1.3倍以上であり、該平均結晶粒径の標準偏差が40nm以下である半導体集積回路の製造方法において、
純度が99.9999〜99.999999wt%の硫酸銅めっき浴、アノードに純度が99.9999999wt%の銅電極を用いた電解めっきによって前記トレンチ内に銅めっき層を形成する第1工程、電解めっき後に銅めっき層を水素雰囲気で熱処理をする第2工程を有することを特徴とする半導体集積回路の製造方法。
Priority Applications (1)
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JP2007106945A JP5370979B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体集積回路の製造方法 |
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JP2007106945A JP5370979B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体集積回路の製造方法 |
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JP2008270250A JP2008270250A (ja) | 2008-11-06 |
JP5370979B2 true JP5370979B2 (ja) | 2013-12-18 |
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JP2007106945A Expired - Fee Related JP5370979B2 (ja) | 2007-04-16 | 2007-04-16 | 半導体集積回路の製造方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4109529A1 (en) * | 2021-06-22 | 2022-12-28 | Samsung Display Co., Ltd. | Wiring substrate and display device including the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5135002B2 (ja) * | 2008-02-28 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TW201023328A (en) * | 2008-12-04 | 2010-06-16 | Univ Ibaraki | Semiconductor integrated circuit device and method for producing the same |
JP5747406B2 (ja) * | 2011-02-04 | 2015-07-15 | 国立大学法人茨城大学 | 金属層の結晶粒径及び粒径分布評価方法並びにそれを用いた半導体集積回路装置の製造方法 |
JP5963191B2 (ja) * | 2012-05-31 | 2016-08-03 | 国立大学法人茨城大学 | 半導体集積回路装置及びその製造方法 |
JP6080009B2 (ja) * | 2013-05-13 | 2017-02-15 | 国立大学法人茨城大学 | 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154709A (ja) * | 1996-09-25 | 1998-06-09 | Toshiba Corp | 半導体装置の製造方法 |
JPH11283981A (ja) * | 1998-03-30 | 1999-10-15 | Sony Corp | 半導体装置およびその製造方法 |
JP2000114367A (ja) * | 1998-10-05 | 2000-04-21 | Matsushita Electronics Industry Corp | 半導体装置の製造方法 |
JP2001345325A (ja) * | 2000-06-02 | 2001-12-14 | Nec Kyushu Ltd | 半導体装置の配線形成方法 |
JP4011336B2 (ja) * | 2001-12-07 | 2007-11-21 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
JP4064121B2 (ja) * | 2002-02-13 | 2008-03-19 | 日鉱金属株式会社 | 含リン銅アノードを使用する電気銅めっき方法 |
JP4066820B2 (ja) * | 2003-01-17 | 2008-03-26 | 豊田合成株式会社 | 半導体上に銅(Cu)を主成分とする配線層を形成するための製造方法 |
JP2005223059A (ja) * | 2004-02-04 | 2005-08-18 | Toshiba Corp | 半導体装置 |
WO2006137237A1 (ja) * | 2005-06-22 | 2006-12-28 | Nec Corporation | 半導体装置及びその製造方法 |
JP2007053133A (ja) * | 2005-08-15 | 2007-03-01 | Toshiba Corp | 半導体装置及びその製造方法 |
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2007
- 2007-04-16 JP JP2007106945A patent/JP5370979B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4109529A1 (en) * | 2021-06-22 | 2022-12-28 | Samsung Display Co., Ltd. | Wiring substrate and display device including the same |
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JP2008270250A (ja) | 2008-11-06 |
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