JP5369733B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5369733B2 JP5369733B2 JP2009026423A JP2009026423A JP5369733B2 JP 5369733 B2 JP5369733 B2 JP 5369733B2 JP 2009026423 A JP2009026423 A JP 2009026423A JP 2009026423 A JP2009026423 A JP 2009026423A JP 5369733 B2 JP5369733 B2 JP 5369733B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- slot
- slot group
- slots
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 238000009832 plasma treatment Methods 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 34
- 230000005684 electric field Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/366,907 US8753475B2 (en) | 2008-02-08 | 2009-02-06 | Plasma processing apparatus |
| KR1020090009977A KR101094976B1 (ko) | 2008-02-08 | 2009-02-06 | 플라즈마 처리 장치 |
| JP2009026423A JP5369733B2 (ja) | 2008-02-27 | 2009-02-06 | プラズマ処理装置 |
| TW98104108A TWI415526B (zh) | 2008-02-08 | 2009-02-09 | 電漿處理裝置 |
| CN2009100069203A CN101505574B (zh) | 2008-02-08 | 2009-02-09 | 等离子体处理设备 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008045697 | 2008-02-27 | ||
| JP2008045697 | 2008-02-27 | ||
| JP2009026423A JP5369733B2 (ja) | 2008-02-27 | 2009-02-06 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009231271A JP2009231271A (ja) | 2009-10-08 |
| JP2009231271A5 JP2009231271A5 (enExample) | 2012-03-22 |
| JP5369733B2 true JP5369733B2 (ja) | 2013-12-18 |
Family
ID=41246406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009026423A Expired - Fee Related JP5369733B2 (ja) | 2008-02-08 | 2009-02-06 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5369733B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5377587B2 (ja) * | 2011-07-06 | 2013-12-25 | 東京エレクトロン株式会社 | アンテナ、プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299240A (ja) * | 2001-03-28 | 2002-10-11 | Tadahiro Omi | プラズマ処理装置 |
| JP3723783B2 (ja) * | 2002-06-06 | 2005-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2004200307A (ja) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP4563729B2 (ja) * | 2003-09-04 | 2010-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2005123406A (ja) * | 2003-10-16 | 2005-05-12 | Tokyo Electron Ltd | プラズマエッチング方法。 |
-
2009
- 2009-02-06 JP JP2009026423A patent/JP5369733B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009231271A (ja) | 2009-10-08 |
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