JP5367415B2 - 発光装置の作製方法及び成膜用基板 - Google Patents

発光装置の作製方法及び成膜用基板 Download PDF

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Publication number
JP5367415B2
JP5367415B2 JP2009048760A JP2009048760A JP5367415B2 JP 5367415 B2 JP5367415 B2 JP 5367415B2 JP 2009048760 A JP2009048760 A JP 2009048760A JP 2009048760 A JP2009048760 A JP 2009048760A JP 5367415 B2 JP5367415 B2 JP 5367415B2
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layer
light
substrate
film formation
emitting device
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Japanese (ja)
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JP2009238745A (ja
JP2009238745A5 (enExample
Inventor
舜平 山崎
隆広 井辺
卓也 鶴目
幸一郎 田中
哲史 瀬尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2009048760A 2008-03-06 2009-03-03 発光装置の作製方法及び成膜用基板 Expired - Fee Related JP5367415B2 (ja)

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JP2009048760A JP5367415B2 (ja) 2008-03-06 2009-03-03 発光装置の作製方法及び成膜用基板

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JP2008057086 2008-03-06
JP2008057086 2008-03-06
JP2009048760A JP5367415B2 (ja) 2008-03-06 2009-03-03 発光装置の作製方法及び成膜用基板

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JP2009238745A JP2009238745A (ja) 2009-10-15
JP2009238745A5 JP2009238745A5 (enExample) 2012-04-05
JP5367415B2 true JP5367415B2 (ja) 2013-12-11

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Publication number Priority date Publication date Assignee Title
JP2011195870A (ja) * 2010-03-18 2011-10-06 Semiconductor Energy Lab Co Ltd 成膜方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723242B2 (ja) * 1994-10-05 2005-12-07 財団法人川村理化学研究所 新規な情報像形成方法
US5851709A (en) * 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
US6159832A (en) * 1998-03-18 2000-12-12 Mayer; Frederick J. Precision laser metallization
JP2006309995A (ja) * 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
TWI431380B (zh) * 2006-05-12 2014-03-21 Photon Dynamics Inc 沉積修復設備及方法
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5314857B2 (ja) * 2006-07-28 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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