JP5363237B2 - 光電変換回路及びそれに用いる光電変換素子 - Google Patents
光電変換回路及びそれに用いる光電変換素子 Download PDFInfo
- Publication number
- JP5363237B2 JP5363237B2 JP2009185409A JP2009185409A JP5363237B2 JP 5363237 B2 JP5363237 B2 JP 5363237B2 JP 2009185409 A JP2009185409 A JP 2009185409A JP 2009185409 A JP2009185409 A JP 2009185409A JP 5363237 B2 JP5363237 B2 JP 5363237B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- electrode
- voltage
- transistor
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 223
- 239000003990 capacitor Substances 0.000 claims description 60
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009185409A JP5363237B2 (ja) | 2009-08-10 | 2009-08-10 | 光電変換回路及びそれに用いる光電変換素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009185409A JP5363237B2 (ja) | 2009-08-10 | 2009-08-10 | 光電変換回路及びそれに用いる光電変換素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011040917A JP2011040917A (ja) | 2011-02-24 |
| JP2011040917A5 JP2011040917A5 (enrdf_load_stackoverflow) | 2012-10-25 |
| JP5363237B2 true JP5363237B2 (ja) | 2013-12-11 |
Family
ID=43768250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009185409A Expired - Fee Related JP5363237B2 (ja) | 2009-08-10 | 2009-08-10 | 光電変換回路及びそれに用いる光電変換素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5363237B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5907500B2 (ja) * | 2011-10-06 | 2016-04-26 | 国立研究開発法人産業技術総合研究所 | 光電変換装置、光電変換アレイおよび撮像装置 |
| US9584707B2 (en) * | 2014-11-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| TWI792065B (zh) | 2015-01-30 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及電子裝置 |
| CN111757025B (zh) * | 2019-03-28 | 2022-11-18 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3664035B2 (ja) * | 1999-03-29 | 2005-06-22 | コニカミノルタホールディングス株式会社 | 固体撮像装置 |
| EP1557032A1 (de) * | 2002-10-29 | 2005-07-27 | Photonfocus AG | Optoelektronischer sensor |
| JP4718169B2 (ja) * | 2004-12-17 | 2011-07-06 | オムロンオートモーティブエレクトロニクス株式会社 | Ｃｍｏｓ撮像デバイス回路 |
-
2009
- 2009-08-10 JP JP2009185409A patent/JP5363237B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011040917A (ja) | 2011-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI719801B (zh) | 固態攝像裝置、固態攝像裝置的驅動方法、以及電子設備 | |
| CN111526306B (zh) | 具有单光子雪崩二极管像素的半导体器件 | |
| US9036064B2 (en) | Solid-state imaging device including a photoelectric converting film and camera system using the solid-state imaging device | |
| TWI232678B (en) | Solid-state imaging apparatus and driving method thereof | |
| US8987646B2 (en) | Pixel and method | |
| US11006062B2 (en) | Pixel sensing circuit and driving method thereof, image sensor and electronic device | |
| JP5012188B2 (ja) | 固体撮像装置 | |
| JP4770618B2 (ja) | 固体撮像装置 | |
| TWI456988B (zh) | 主動式像素感測器電路及其操作方法 | |
| JP2009060424A (ja) | 光電変換回路及びこれを用いた固体撮像装置 | |
| WO2019223329A1 (zh) | 像素电路、显示面板、显示设备以及像素电路的控制方法 | |
| US9848145B2 (en) | Imaging device including pixels | |
| US10757354B2 (en) | Pixel sensing circuit and driving method thereof, image sensor and electronic device | |
| CN114640808B (zh) | 基于复位晶体管复用技术的高动态范围图像传感器像素单元 | |
| CN113228623B (zh) | 超高动态范围cmos传感器 | |
| JP5363237B2 (ja) | 光電変換回路及びそれに用いる光電変換素子 | |
| JPWO2007066762A1 (ja) | 固体撮像装置 | |
| US20220014704A1 (en) | Imaging processing circuit, imaging system, imaging processing method, and non-transitory storage medium | |
| WO2018086342A1 (zh) | 像素感应电路及其驱动方法、图像传感器、电子设备 | |
| US9860462B2 (en) | Solid-state imaging device, method of driving solid-state imaging device, and imaging system | |
| US9743027B2 (en) | Image sensor with high dynamic range and method | |
| CN114627788B (zh) | 光电传感像素补偿电路、驱动方法及显示装置 | |
| JP6370135B2 (ja) | 撮像装置、撮像システム、撮像装置の駆動方法 | |
| JP2010040981A (ja) | 光電変換装置、及び当該光電変換装置を具備する電子機器 | |
| JP3142943B2 (ja) | 固体撮像装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120808 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120907 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130529 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130625 |
|
| R155 | Notification before disposition of declining of application |
Free format text: JAPANESE INTERMEDIATE CODE: R155 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130905 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |