JP5358104B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP5358104B2
JP5358104B2 JP2008042812A JP2008042812A JP5358104B2 JP 5358104 B2 JP5358104 B2 JP 5358104B2 JP 2008042812 A JP2008042812 A JP 2008042812A JP 2008042812 A JP2008042812 A JP 2008042812A JP 5358104 B2 JP5358104 B2 JP 5358104B2
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light emitting
case
lead member
reflection
emitting device
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JP2009200403A (en
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稔真 林
英樹 國分
仁 大森
美智雄 宮脇
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Panasonic Corp
Toyoda Gosei Co Ltd
Panasonic Holdings Corp
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Panasonic Corp
Toyoda Gosei Co Ltd
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that using silicone resin as a sealer to a reflection case causes black discoloration at the base of the lead material at the bottom wall of the case, resulting in deterioration of reflection efficiency and also causes stress application to bonding wire due to a larger linear expansion coefficient of the silicone resin than the material of the reflection case. <P>SOLUTION: A light-emitting apparatus includes: a housing case 10 integrally molding a reflection case 11 and a terminal supporting portion 20 in the rear part of the reflection case 11; and lead members 30 and 40 inserted into the housing case 10, wherein their base portions 31 and 41 have the same width as the bottom wall of the reflection case 11. The base portions 31 and 41 are silver plated, and the reflection case 11 is filled with a sealer containing a phosphor dispersed therein, wherein each of the base portions of the lead members 30 and 40 is coated with a white reflecting layer 15. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

本発明は配線基板に表面実装される側面発光型の発光装置に関する。   The present invention relates to a side-emitting type light emitting device that is surface-mounted on a wiring board.

上記タイプの発光装置の例が特許文献1に示されている。この発光装置では、全体の厚みを抑制するため、反射ケースを薄い箱状としている。反射ケースの底壁部には端子保持部が一体的に設けられて筐体部を構成している。この筐体部へリード部材がインサートされており、リード部材の基部は反射ケースの底壁で表出している。また、リード部材において反射ケースから引き出された部分は、反射ケースの側部から端子保持部に沿って折り曲げられ、さらに端子保持部の下面に沿って折り曲げられその先端は接続部として切欠き部に収納される。
反射ケースの底部に表出するリード部材の基部にはLEDチップ(発光素子)がマウントされるとともに、このLEDチップとリード部材のボンディング領域へボンディングワイヤが懸架される。
なお、本願に関連する技術を開示する特許文献2及び特許文献3も参照されたい。
An example of the light emitting device of the above type is shown in Patent Document 1. In this light emitting device, the reflection case is formed in a thin box shape in order to suppress the overall thickness. A terminal holding portion is integrally provided on the bottom wall portion of the reflection case to constitute a housing portion. A lead member is inserted into the casing, and the base of the lead member is exposed on the bottom wall of the reflection case. In addition, the portion of the lead member that is pulled out of the reflection case is bent along the terminal holding portion from the side portion of the reflection case, and further bent along the lower surface of the terminal holding portion, and the tip thereof becomes a notch as a connection portion. Stored.
An LED chip (light emitting element) is mounted on the base portion of the lead member exposed to the bottom of the reflection case, and a bonding wire is suspended from the bonding region of the LED chip and the lead member.
Please also refer to Patent Document 2 and Patent Document 3 which disclose techniques related to the present application.

特開2006−253551号公報JP 2006-253551 A 特開2002−520823号公報JP 2002-520823 A 特開2001−24228号公報JP 2001-24228 A

上記側面発光型の発光装置では、全体の厚みを抑制する見地から、反射ケースが薄幅に形成されている。かかる薄幅の反射ケースにおいて発光素子からの光取出し効率を向上させるため、反射ケース底壁に表出するリード部材の基部を銀メッキしてこれを鏡面とするとともに、その反射面積を広くするために基部の幅を反射ケースの底壁の幅とほぼ等しくしている。
薄幅の反射ケースではその側壁(基板に接する側壁とそれに対向する側壁)が発光素子に近接するとともに、側壁を傾斜させることが困難である。そのため、反射ケースの底壁部における反射効率を高めることにより、発光素子からの光取出し効率が向上するものと考えられていた。
In the side light emitting type light emitting device, the reflective case is formed thin from the viewpoint of suppressing the overall thickness. In order to improve the light extraction efficiency from the light emitting element in such a thin reflective case, the base of the lead member exposed on the bottom wall of the reflective case is silver-plated to make it a mirror surface and to increase the reflective area In addition, the width of the base is substantially equal to the width of the bottom wall of the reflection case.
In a thin reflective case, the side wall (the side wall in contact with the substrate and the side wall facing it) is close to the light emitting element and it is difficult to incline the side wall. For this reason, it has been considered that the light extraction efficiency from the light emitting element is improved by increasing the reflection efficiency at the bottom wall portion of the reflection case.

かかる発光装置につき、本発明者らは鋭意検討を重ねてきたところ、次に掲げる解決すべき課題を見出した。
発光装置を長時間使用すると、リード部材の基部が黒変して発光装置としての出力が低下することがある。これは、リード部材の表面に施した銀メッキが塩素と反応して塩化銀となり、さらにこの塩化銀が分解して銀イオンが粒状に析出するためと考えられる。
このようなリード部材の黒変は、反射ケースに充填される封止材として耐光性・耐熱性に優れたシリコーン樹脂を採用した場合に、特に顕著である。
これは、シリコーン樹脂の気体バリア性が低いため、空気中の塩素がシリコーン樹脂製の封止材を透過してリード部材の基部表面と反応するためと考えられる。また、シリコーン樹脂は反射ケースの材料(ポリアミド系樹脂が一般的)に比べて線膨張係数が大きいため、熱履歴に伴いシリコーン樹脂からなる封止材と反射ケースとの界面に隙間が生じ、若しくはその気密性が低下して当該界面より塩素を含む外部不純物が進入し、リード部材の基部表面へ到達することも黒変の一因と考えられる。
The inventors of the present invention have made extensive studies on the light emitting device, and have found the following problems to be solved.
When the light emitting device is used for a long time, the base portion of the lead member may turn black and the output as the light emitting device may decrease. This is presumably because the silver plating applied to the surface of the lead member reacts with chlorine to become silver chloride, which is further decomposed and silver ions are precipitated in a granular form.
Such blackening of the lead member is particularly noticeable when a silicone resin excellent in light resistance and heat resistance is employed as a sealing material filled in the reflective case.
This is presumably because chlorine in the air reacts with the base surface of the lead member through the silicone resin sealing material because the gas barrier property of the silicone resin is low. In addition, since the silicone resin has a larger coefficient of linear expansion than the material of the reflective case (generally polyamide-based resin), a gap is generated at the interface between the sealing material made of the silicone resin and the reflective case due to thermal history, or It is also considered that the blackness is caused by the deterioration of the airtightness and the entry of external impurities including chlorine from the interface to reach the base surface of the lead member.

更には、大きな線膨張係数のシリコーン樹脂を反射ケースに充填したときには、シリコーン樹脂の熱変形に伴い、発光素子とリード部材との間に懸架されるボンディングワイヤに応力がかかる。そのため、ワイヤが断線するおそれがある。換言すれば、ワイヤ断線を防止するためボンディング作業に注意を要し、作業効率低下、歩留まり低下の原因となる。   Further, when the reflective case is filled with a silicone resin having a large linear expansion coefficient, stress is applied to the bonding wire suspended between the light emitting element and the lead member due to thermal deformation of the silicone resin. Therefore, there exists a possibility that a wire may be disconnected. In other words, attention must be paid to the bonding work in order to prevent the wire breakage, which causes a reduction in work efficiency and a yield.

この発明は上記課題を解決すべくなされたものである。
この発明の第1の局面は次のように規定される。即ち、
配線基板に表面実装される側面発光型の発光装置であって、
反射ケースと該反射ケースの後部の端子保持部とを一体成形してなる筐体部と、
該筐体部へインサートされるリード部材であって、前記反射ケースの底壁部分の幅とほぼ等しい幅の基部を備え、該基部が銀メッキされているリード部材と、
前記反射ケース内において前記リード部材の基部を被覆する白色反射層と、
前記反射ケース内に充填される封止材であって、シリコーン樹脂へ蛍光体を分散させてなる封止材と、
を備えてなる発光装置。
The present invention has been made to solve the above problems.
The first aspect of the present invention is defined as follows. That is,
A side-emitting type light emitting device that is surface-mounted on a wiring board,
A casing formed by integrally molding the reflecting case and the terminal holding portion at the rear of the reflecting case;
A lead member to be inserted into the housing portion, comprising a base portion having a width substantially equal to the width of the bottom wall portion of the reflection case, wherein the base portion is silver-plated;
A white reflective layer covering the base of the lead member in the reflective case;
A sealing material filled in the reflection case, wherein the phosphor is dispersed in a silicone resin; and
A light emitting device comprising:

このように構成された発光装置によれば、リード部材の基部が白色反射層で被覆されているので、当該部分において反射効率が維持される。即ち、銀メッキされたリード部材の基部ように黒変することがない。これにより、発光装置としての出力を長期間に渡り維持できる。
ここに、銀メッキによる鏡面仕様のリード部材の基部に比べて白色反射層ではその反射効率が低下する。しかしながら、本発明者らの検討によれば、発光装置としての初期出力(輝度)は、リード部材の基部を白色反射層で被覆した場合、出力が3%程度向上したことを確認した。
これは、発光素子からの光が白色反射層において乱反射(拡散反射)されるので、封止材中の蛍光体へより均一に光が供給され、蛍光体からの光放射量が増大し、もって、反射ケース底壁での反射光量は低下するものの、発光装置から放出される光の総量が増加されるためと考えられる。
According to the light emitting device configured as described above, since the base portion of the lead member is covered with the white reflective layer, the reflection efficiency is maintained in the portion. That is, it does not turn black like the base of the silver plated lead member. Thereby, the output as a light-emitting device can be maintained over a long period of time.
Here, the reflection efficiency of the white reflective layer is lower than that of the base part of the specular lead member with silver plating. However, according to the study by the present inventors, it was confirmed that the initial output (luminance) as the light emitting device was improved by about 3% when the base portion of the lead member was covered with the white reflective layer.
This is because light from the light emitting element is diffusely reflected (diffuse reflected) in the white reflective layer, so that light is more uniformly supplied to the phosphor in the sealing material, and the amount of light emitted from the phosphor increases. Although the amount of light reflected at the bottom wall of the reflection case is reduced, the total amount of light emitted from the light emitting device is increased.

更には、発光素子からの放射光が蛍光体へより均一に供給されることにより、発光装置から放出される光の色むらが抑制される。ここに、色むらとは、発光装置から放出される光の照射面における色の不均一をいい、発光素子から放出される光が蛍光体を含有する封止材中を伝播する経路長(光路長)が不均一になることを原因としている。
白色反射層5の作用を図10に模式的に示している。図10(A)に示すように、発光素子2からの光が何ら反射されることなく到達する照射面Aと反射ケース内で反射した光が照射される照射面Bとでは、色合いが異なってくる。より具体的には、照射面Aに照射される光は封止材4を通過する距離が比較的短いので、発光素子の発光色(例えば青色)がそのまま反映されやすい。他方、照射面Bには封止材4を長い距離通過してきた光が照射されるので、発光素子2からの光と蛍光体からの光との混合が進み、光の白色化が促進されている。
Furthermore, since the emitted light from the light emitting element is more uniformly supplied to the phosphor, uneven color of the light emitted from the light emitting device is suppressed. Here, the color unevenness refers to non-uniformity of color on the irradiation surface of the light emitted from the light emitting device, and the path length (optical path) through which the light emitted from the light emitting element propagates in the sealing material containing the phosphor. This is due to the non-uniformity of the length.
The action of the white reflective layer 5 is schematically shown in FIG. As shown in FIG. 10A, the color is different between the irradiation surface A where the light from the light emitting element 2 arrives without being reflected and the irradiation surface B irradiated with the light reflected in the reflection case. come. More specifically, since the light irradiated to the irradiation surface A has a relatively short distance through the sealing material 4, the light emission color (for example, blue) of the light emitting element is easily reflected as it is. On the other hand, since the light that has passed through the sealing material 4 for a long distance is irradiated onto the irradiation surface B, the mixing of the light from the light emitting element 2 and the light from the phosphor proceeds, and the whitening of the light is promoted. Yes.

この発明によれば、次の理由により光の色むら抑制される(図10(B)参照)。
第1の理由として、発光素子2からの光が白色反射層5で乱反射されることにより光路長の異なる光が、互いに混合されるためである。
第2の理由として、白色反射層5の存在により、封止材4表面と反射面(白色反射層5表面)との距離が短くなるので、照射面Bへ照射される光が封止材4を通過する通路の長さが短くなる。これにより、照射面Aへ照射される光と照射面Bへ照射される光とを比較した場合、白色反射層5の存在により、封止材4中を通過する距離の差が小さくなる。よって、照射面Aと照射面Bでの色のバラつきが緩和される。
According to the present invention, light color unevenness is suppressed for the following reason (see FIG. 10B).
The first reason is that the light from the light emitting element 2 is diffusely reflected by the white reflective layer 5 so that lights having different optical path lengths are mixed with each other.
As a second reason, the distance between the surface of the sealing material 4 and the reflective surface (the surface of the white reflective layer 5) is shortened due to the presence of the white reflective layer 5, so that the light irradiated to the irradiation surface B is encapsulated. The length of the passage passing through is shortened. Thereby, when the light irradiated to the irradiation surface A and the light irradiated to the irradiation surface B are compared, the difference of the distance which passes in the sealing material 4 becomes small by presence of the white reflective layer 5. FIG. Therefore, the variation in color between the irradiation surface A and the irradiation surface B is reduced.

白色反射層5の材質は、発光素子2からの光を乱反射(拡散反射)できるものであれば、任意に選択可能である。例えば、ポリアミド系の合成樹脂、アルミナなどの無機材料を採用することができる。
係る材料を予め板状に成型してこれをリード部材の基部の上へ積層することができる。係る材料を液状にしてリード部材の基部の上へ塗布してもよい。
より好ましくは、反射ケースの材料に白色系合成樹脂を採用し、リード部材をインサートとして、この反射ケースの材料で白色反射層5を一体的に型形成する。
The material of the white reflective layer 5 can be arbitrarily selected as long as the light from the light emitting element 2 can be irregularly reflected (diffuse reflected). For example, an inorganic material such as a polyamide-based synthetic resin or alumina can be used.
Such a material can be previously formed into a plate shape and laminated on the base of the lead member. Such a material may be liquefied and applied onto the base of the lead member.
More preferably, a white synthetic resin is adopted as the material of the reflective case, and the white reflective layer 5 is integrally formed with the material of the reflective case using the lead member as an insert.

リード部材の基部3の表面と白色反射層5の表面との距離h1はリード部材の基部3の表面と発光素子2の表面との距離h2より短くすることが好ましい。これにより、発光素子2から側方へ放出された光をより確実に白色反射層5の表面で反射させることができる。より好ましくは、リード部材の基部3の表面から白色反射層5の表面までの距離h1をリード部材の基部3の表面から発光素子の発光層までの距離より短くする。   The distance h1 between the surface of the base 3 of the lead member and the surface of the white reflective layer 5 is preferably shorter than the distance h2 between the surface of the base 3 of the lead member and the surface of the light emitting element 2. Thereby, the light emitted from the light emitting element 2 to the side can be more reliably reflected on the surface of the white reflective layer 5. More preferably, the distance h1 from the surface of the base portion 3 of the lead member to the surface of the white reflective layer 5 is shorter than the distance from the surface of the base portion 3 of the lead member to the light emitting layer of the light emitting element.

この発明の他の局面は次のように規定される。即ち、
前の局面で規定される発光装置において、前記リード部材の基部は発光素子をマウントする第1の領域と前記発光素子からのボンディングワイヤをボンディングする第2の領域を備え、前記白色反射層は前記第1の領域と前記第2の領域の間において前記基部を被覆する、ことを特徴とする。
このように規定される発明によれば、白色反射層が発光素子と第2の領域(ボンディング領域)との間に配置され、線膨張係数の大きなシリコーン樹脂を白色反射層で置換することができる。例えば白色反射層を反射ケースと同一材料製とすれば、シリコーン樹脂の熱変形によりボンディングワイヤに加わる応力が緩和される。これにより、ボンディングワイヤの断線を未然に防止できる。
Another aspect of the present invention is defined as follows. That is,
In the light emitting device defined in the previous aspect, the base of the lead member includes a first region for mounting a light emitting element and a second region for bonding a bonding wire from the light emitting element, and the white reflective layer includes The base is covered between the first region and the second region.
According to the invention thus defined, the white reflective layer is disposed between the light emitting element and the second region (bonding region), and the silicone resin having a large linear expansion coefficient can be replaced with the white reflective layer. . For example, if the white reflective layer is made of the same material as the reflective case, the stress applied to the bonding wire due to thermal deformation of the silicone resin is alleviated. Thereby, disconnection of a bonding wire can be prevented beforehand.

この発明の他の局面は次のように規定される。即ち、
前の局面で規定される発光装置において、前記第1の領域は前記反射ケースの底壁部のほぼ中央に位置し、前記第2の領域は反射ケースの側壁に接して位置する。
このように規定される発明によれば、発光素子とワイヤがリード部材にボンディングされる位置とが可及的に離される。ここに、側壁はワイヤ架設方向と直行する短幅のものを指す。これにより、リード部材の第2の領域(白色反射層から露出している)に対する発光素子からの熱影響が小さくなり、当該第2の領域における黒変を抑制することができる。
また、発光素子から最も離れた位置において反射ケースの底壁部を鏡面(銀メッキ面)としてその位置に高い反射効率を確保しておくことは、発光装置の発光バランスを均一化する見地からも好適である。即ち、反射ケースの開口部がより均一に発光することとなる。
Another aspect of the present invention is defined as follows. That is,
In the light emitting device defined in the previous aspect, the first region is located at a substantially center of the bottom wall portion of the reflection case, and the second region is located in contact with the side wall of the reflection case.
According to the invention thus defined, the light emitting element and the position where the wire is bonded to the lead member are separated as much as possible. Here, the side wall indicates a short width perpendicular to the wire erection direction. Thereby, the thermal influence from the light emitting element with respect to the 2nd area | region (exposed from the white reflective layer) of a lead member becomes small, and the blackening in the said 2nd area | region can be suppressed.
In addition, from the standpoint of uniforming the light emission balance of the light emitting device, securing the high reflection efficiency at the position where the bottom wall of the reflecting case is a mirror surface (silver plated surface) at the position farthest from the light emitting element. Is preferred. That is, the opening of the reflection case emits light more uniformly.

以下、この発明の実施の形態につき図例を参照しながら説明をする。
図1(A)は実施例の発光装置1を正面から見た斜視図であり、同じく図1(B)は背面からみた斜視図である。図2は6面図であり、(A)は平面図、(B)は左側面図、(C)は正面図、(D)は右側面図、(E)は底面図、(F)は背面図である。また、図3は図2(C)におけるIII-III線断面図、図4は図2(A)におけるIV-IV線断面図、図5は図2(A)におけるV-V線断面図である。
図1に示すように、実施例の発光装置1は筐体部10、第1のリード部材30、第2のリード部材40、及びLEDチップ60を備えてなる。
図1及び図3に示されるように、筐体部10は反射ケース11と端子保持部20とからなる。反射ケース11は薄幅なカップ形状であり、その凹部13の内周面が反射面15とされている。
凹部には封止材14としてシリコーン樹脂が充填され、このシリコーン樹脂には蛍光体が均一に分散されている。この蛍光体としてLEDチップ60からの青色光を吸収して黄色系の光を放出するYAG系またはBOS系など、既知のものを採用することができる。
反射面15は側壁反射部155と底部反射部156(白色反射層)からなる。これら反射部155、156は筐体部10と一体的に白色樹脂で形成されている。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a perspective view of the light emitting device 1 of the embodiment as viewed from the front, and FIG. 1B is a perspective view of the light emitting device 1 as viewed from the back. FIG. 2 is a six-sided view, (A) is a plan view, (B) is a left side view, (C) is a front view, (D) is a right side view, (E) is a bottom view, and (F) is a bottom view. It is a rear view. 3 is a sectional view taken along line III-III in FIG. 2C, FIG. 4 is a sectional view taken along line IV-IV in FIG. 2A, and FIG. 5 is a sectional view taken along line VV in FIG.
As shown in FIG. 1, the light emitting device 1 according to the embodiment includes a housing 10, a first lead member 30, a second lead member 40, and an LED chip 60.
As shown in FIGS. 1 and 3, the housing unit 10 includes a reflective case 11 and a terminal holding unit 20. The reflection case 11 has a thin cup shape, and the inner peripheral surface of the recess 13 is a reflection surface 15.
The recess is filled with a silicone resin as a sealing material 14, and the phosphor is uniformly dispersed in the silicone resin. As this phosphor, a known material such as a YAG system or a BOS system that absorbs blue light from the LED chip 60 and emits yellow light can be used.
The reflection surface 15 includes a side wall reflection part 155 and a bottom reflection part 156 (white reflection layer). These reflecting portions 155 and 156 are formed of white resin integrally with the housing portion 10.

この反射面15は全体的に椀状の曲面であり、曲面の中心点にLEDチップ60が配置される。反射面の全面を椀状の曲面とすることにより、LEDチップ60から横方向へ放出される光が反射ケース11の光軸方向へ効率よくかつ均一に反射される。反射面15を回転放物線形状として、当該放物線の原点にLEDチップ60を配置することが好ましい。反射面15には窓16、17が形成され、この窓16及び17を介してボンディング領域32、42(第2の領域)が表出している。
窓16及び窓17はLEDチップ60を挟むように配置される。ボンディングワイヤをファーストボンドできれば窓の形状は特に制限されない。窓16及び窓17はLEDチップ60からできる限り離して形成することが好ましい。これにより、LEDチップ60からの熱影響を受け難くなる。ボンディング領域32、42ではリード部材30及び40の各基部31、41が表出しているので、LEDチップ60からの熱影響が小さくなれば、その黒変を予防できる。
また、反射面が全体的に曲面とされているため、封止部材の充填時に気泡が発生し難くなる。気泡発生の起点となる角部が少なくできるからである。
The reflecting surface 15 is a bowl-like curved surface as a whole, and the LED chip 60 is disposed at the center point of the curved surface. By making the entire reflection surface into a bowl-shaped curved surface, the light emitted from the LED chip 60 in the lateral direction is efficiently and uniformly reflected in the optical axis direction of the reflection case 11. It is preferable to arrange the LED chip 60 at the origin of the parabola, with the reflecting surface 15 having a rotating parabola shape. Windows 16 and 17 are formed on the reflecting surface 15, and bonding regions 32 and 42 (second regions) are exposed through the windows 16 and 17.
The window 16 and the window 17 are arranged so as to sandwich the LED chip 60. The shape of the window is not particularly limited as long as the bonding wire can be first bonded. The window 16 and the window 17 are preferably formed as far as possible from the LED chip 60. Thereby, it becomes difficult to receive the thermal influence from LED chip 60. FIG. Since the base portions 31 and 41 of the lead members 30 and 40 are exposed in the bonding regions 32 and 42, the blackening can be prevented if the thermal influence from the LED chip 60 is reduced.
Moreover, since the reflecting surface is entirely curved, bubbles are less likely to be generated when the sealing member is filled. It is because the corner | angular part used as the starting point of bubble generation can be decreased.

端子保持部20は反射ケース11の後側へ当該反射ケース11と一体に形成されており、全体が中実である。端子保持部20には4つの切欠き23、24、25及び26が形成されている。第1の切欠き23には第1のリード部材30の接続部33が回り込んでいる。同じく第2の切欠き24には第2のリード部材40の接続部43が回り込んでいる。第3の切欠き25には放熱板51が回り込んでいる。第4の切欠き26には放熱板52が回り込んでいる。ここに放熱板51及び放熱板52は第1のリード部材において筐体部10から引き出されて外部へ表出する一部分である。各切欠き23、24、25及び26に回り込んだ接続部33、43及び放熱板51、52は端子保持部20の下面とほぼ面一となる。これにより、リード部材30及び40に過剰な衝撃がかかることを予防できる。
第1の切欠き23と第3の切欠き25とを分離する中実部が第1の離隔部27であり、第3の切欠き25と第4の切欠き26とを分離する中実部が第2の離隔部28であり、第4の切欠き26と第2の切欠き24とを分離する中実部が第3の離隔部29である。かかる第1〜第3の離隔部27,28,29の存在により、第1及び第2の接続部33,43と放熱板51、52との短絡及び放熱板51,52間の短絡を確実に予防できる。また、接続部33,43と放熱板51,52とを筐体部の異なる面から引出し、さらに離隔部(樹脂の中実部分)を広くとることで、筐体部の損傷(クラック、ひび割れ等)を防止できる。
The terminal holding part 20 is integrally formed with the reflection case 11 on the rear side of the reflection case 11 and is solid as a whole. Four cutouts 23, 24, 25 and 26 are formed in the terminal holding portion 20. The connection portion 33 of the first lead member 30 is wrapped around the first notch 23. Similarly, the connection portion 43 of the second lead member 40 goes around the second notch 24. A heat sink 51 wraps around the third notch 25. A heat sink 52 wraps around the fourth notch 26. Here, the heat radiating plate 51 and the heat radiating plate 52 are a part of the first lead member that is pulled out from the housing 10 and exposed to the outside. The connecting portions 33 and 43 and the heat sinks 51 and 52 that wrap around the notches 23, 24, 25, and 26 are substantially flush with the lower surface of the terminal holding portion 20. Thereby, it is possible to prevent an excessive impact from being applied to the lead members 30 and 40.
The solid part that separates the first notch 23 and the third notch 25 is the first separation part 27, and the solid part that separates the third notch 25 and the fourth notch 26. Is the second separation portion 28, and the solid portion that separates the fourth notch 26 and the second notch 24 is the third separation portion 29. By the presence of the first to third separation portions 27, 28, 29, the first and second connection portions 33, 43 and the heat sinks 51, 52 are short-circuited and the heat sinks 51, 52 are short-circuited reliably. Can be prevented. Further, the connection portions 33 and 43 and the heat sinks 51 and 52 are pulled out from different surfaces of the housing portion, and further, the separation portion (solid portion of the resin) is widened to damage the housing portion (cracks, cracks, etc.). ) Can be prevented.

第1のリード部材30は基部31、接続部33及び放熱板51、52を備える。基部31は筐体部10の左右方向に約3/4の長さを有する。基部31において反射ケース11のほぼ中央に位置する部分にLEDチップ60が周知の方法でマウントされている。第1のリード部材30においてLEDチップ60をマウントした位置を挟むように放熱板51、52が延設されている。
第1のリード部材30において筐体部10から外部へ引き出された部分が接続部33となる。接続部33はまず端子保持部20の側面に沿って折り曲げられ、さらに同じく端子保持部20下面に沿って折り曲げられて、第1の切欠き23内に収納される。
The first lead member 30 includes a base portion 31, a connection portion 33, and heat sinks 51 and 52. The base portion 31 has a length of about 3/4 in the left-right direction of the housing portion 10. The LED chip 60 is mounted on a portion of the base 31 that is located substantially at the center of the reflection case 11 by a known method. Heat sinks 51 and 52 are extended so as to sandwich the position where the LED chip 60 is mounted on the first lead member 30.
A portion of the first lead member 30 that is pulled out from the housing portion 10 is a connection portion 33. The connecting portion 33 is first bent along the side surface of the terminal holding portion 20 and is further bent along the lower surface of the terminal holding portion 20 and stored in the first notch 23.

第2のリード部材40は基部41及び接続部43を備えてなる。基部41は筐体部10の左右方向に約1/4の長さを有する。
第2のリード部材40において筐体部10から引き出された部分が接続部43となる。接続部43はまず端子保持部20の側面に沿って折り曲げられ、さらに同じく端子保持部20下面に沿って折り曲げられて、第2の切欠き24内に収納される。
The second lead member 40 includes a base portion 41 and a connection portion 43. The base 41 has a length of about ¼ in the left-right direction of the casing 10.
A portion of the second lead member 40 that is pulled out from the housing portion 10 is a connection portion 43. The connection portion 43 is first bent along the side surface of the terminal holding portion 20, and is similarly bent along the lower surface of the terminal holding portion 20 and is accommodated in the second notch 24.

上記において、筐体部10は白色顔料を分散したポリアミド材料からなる。その他、白色セラミックス材料で形成することもできる。成形性を考慮すれば、後述のインサート成形が容易であり、且つ、本願のような複雑な形状も一体形成可能とする樹脂材料が好ましい。これにより、反射ケース11の反射面15は白色となり、LEDチップ60からの光を効率よく乱反射(拡散反射)させる。
リード部材30、40には銅板やアルミ板を採用することができる。そして、その基部31、41の表面を銀メッキして鏡面とする。
LEDチップには短波長の光を発光するIII族窒化物系化合物半導体発光素子などを用いる。このLEDチップへ適当な蛍光体を組み合わせることにより白色発光が得られる。この実施例ではLEDチップとして青色発光ダイオードと青色光を吸収して黄色系の光を放出する蛍光体とを選択している。LEDチップの発光色は任意に選択することができる。また、複数のLEDチップをリード部材へマウントすることもできる。
In the above, the housing | casing part 10 consists of a polyamide material which disperse | distributed the white pigment. In addition, it can be formed of a white ceramic material. In consideration of moldability, a resin material that can be easily formed by insert molding described later and that can form a complicated shape as in the present application is preferable. Thereby, the reflection surface 15 of the reflection case 11 becomes white, and efficiently diffuses light (diffuse reflection) from the LED chip 60.
A copper plate or an aluminum plate can be employed for the lead members 30 and 40. And the surface of the base parts 31 and 41 is silver-plated to make a mirror surface.
As the LED chip, a group III nitride compound semiconductor light emitting element that emits light of a short wavelength is used. White light emission can be obtained by combining an appropriate phosphor with this LED chip. In this embodiment, a blue light emitting diode and a phosphor that absorbs blue light and emits yellow light are selected as the LED chip. The emission color of the LED chip can be arbitrarily selected. In addition, a plurality of LED chips can be mounted on the lead member.

実施例の発光装置1は次のようにして製造される。
銅板をプレス打ち抜きして、接続部及び放熱板が展開された状態のリード部材30及び40を得る。このリード部材30及び40に対して銀メッキ処理を行う。銀メッキ処理の対象はその基部31、41の一表面とする。基部31、41において反射ケース11から表出する部分(即ち、側壁反射部155及び底部反射部156で被覆されていない部分)のみを銀メッキの対象領域とすることができる。そして、このリード部材30及び40をインサートとして筐体部10を射出成形する。その後、LEDチップ60を第1のリード部材30へマウントし、ボンディングワイヤ63及び64をボンディングする(図3参照)。
The light emitting device 1 of the example is manufactured as follows.
The copper plate is press-punched to obtain the lead members 30 and 40 in a state where the connection portion and the heat radiating plate are developed. The lead members 30 and 40 are subjected to silver plating. The target of the silver plating process is one surface of the bases 31 and 41. Only the portions of the base portions 31 and 41 that are exposed from the reflection case 11 (that is, the portions that are not covered with the side wall reflection portion 155 and the bottom reflection portion 156) can be the silver plating target region. And the housing | casing part 10 is injection-molded by using this lead member 30 and 40 as an insert. Thereafter, the LED chip 60 is mounted on the first lead member 30, and bonding wires 63 and 64 are bonded (see FIG. 3).

このとき、ボンディング装置の図示しないヘッドに保持されたボンディングワイヤ63の一端(ファーストボンド端63A)は最初にリード部材30のボンディング領域32へ接合される。接合の方式は超音波、熱、荷重等による溶着(ボールボンディング)である。その後、ボンディングワイヤ63を繰り出しつつヘッドをボンディング領域32から垂直方向へ移動させる。これは、接合部へ横方向の荷重がかかることを防止し、接合部の破損を防止するためである。所定の高さまで引き上げられたヘッドを横方向へ移動し、LEDチップ60の所定の電極へボンディングワイヤ63の他端(センカンドボンド端63B)が接合される。接合の方式はウエッジボンディング(テールレスボンディング)である。この接合が行なわれた後、ボンディングワイヤ63は切断される。
このようにボンディング作業の行なわれたボンディングワイヤ63ではリード部材30へ接合されるファーストボンド端63Aの高さが全体の高さを規定することとなる。ファーストボンド端63AがLEDチップへ接合された従来例(図9参照)とこの実施例の構成とを比較すると、全体としてボンディングワイヤが低くなっていることがわかる。これにより、反射ケース11を薄幅とすることができ(ここで幅は図3において縦方向の長さを指す)、発光装置の小型化の要請に応えられる。また、ボンディングワイヤ材料の使用量も低減することができる。
At this time, one end (first bond end 63A) of the bonding wire 63 held by the head (not shown) of the bonding apparatus is first bonded to the bonding region 32 of the lead member 30. The bonding method is welding (ball bonding) using ultrasonic waves, heat, a load, or the like. Thereafter, the head is moved from the bonding region 32 in the vertical direction while feeding the bonding wire 63. This is to prevent a lateral load from being applied to the joint and to prevent the joint from being damaged. The head pulled up to a predetermined height is moved laterally, and the other end (second bond end 63B) of the bonding wire 63 is bonded to a predetermined electrode of the LED chip 60. The bonding method is wedge bonding (tailless bonding). After this joining is performed, the bonding wire 63 is cut.
Thus, in the bonding wire 63 subjected to the bonding operation, the height of the first bond end 63A bonded to the lead member 30 defines the overall height. When the conventional example (see FIG. 9) in which the first bond end 63A is bonded to the LED chip is compared with the configuration of this example, it can be seen that the bonding wire is lowered as a whole. Thereby, the reflective case 11 can be made thin (here, the width indicates the length in the vertical direction in FIG. 3), and the demand for downsizing of the light emitting device can be met. Also, the amount of bonding wire material used can be reduced.

ボンディングワイヤ64も同様に配設される。すなわちそのファーストボンド端64Aはリード部材40のボンディング領域42へ接合され、そのセカンドボンド端64BはLEDチップ60の所定の電極へ接合される。   The bonding wire 64 is similarly arranged. That is, the first bond end 64 A is bonded to the bonding region 42 of the lead member 40, and the second bond end 64 B is bonded to a predetermined electrode of the LED chip 60.

LEDチップ60及びボンディングワイヤ63、64は耐熱性、耐光性の観点から透光性のシリコーン樹脂で封止される。このシリコーン樹脂中に蛍光体が分散される。
その後、銅板を切りわけて図6の状態とする。
図6において、筐体部10の図示右側側面から引き出される第1のリード部材30において符号133で示される部分が端子保持部20に沿って折り曲げられて接続部33となる。また、筐体部10の図示左側側面から引き出される第2のリード部材40において符号143で示される部分が端子保持部20に沿って折り曲げられて接続部43となる。筐体部10の下面から引き出され第1のリード部材30において符号151、152で示される部分が端子保持部20に沿って折り曲げられて放熱板51、52となる。
The LED chip 60 and the bonding wires 63 and 64 are sealed with a translucent silicone resin from the viewpoint of heat resistance and light resistance. A phosphor is dispersed in the silicone resin.
Thereafter, the copper plate is cut into the state shown in FIG.
In FIG. 6, a portion indicated by reference numeral 133 in the first lead member 30 drawn out from the right side surface of the housing portion 10 in the figure is bent along the terminal holding portion 20 to become a connection portion 33. Further, a portion indicated by reference numeral 143 in the second lead member 40 drawn out from the left side surface of the housing portion 10 in the drawing is bent along the terminal holding portion 20 to become the connection portion 43. The portions indicated by reference numerals 151 and 152 in the first lead member 30 drawn out from the lower surface of the housing portion 10 are bent along the terminal holding portion 20 to become heat radiation plates 51 and 52.

ここにおいて、筐体部10の全て異なる面からリード部材が引き出されているので、当該引き出された部分を折り曲げるときに筐体部10に過剰な負荷が集中することを防止できる。これにより、筐体部10の損傷を防止できる。
特に筐体部10の下面からは、2つの放熱板51、52が引き出されて折り曲げられている。ここで放熱板51、52と同じ面積の放熱板を1枚ものとした場合に比べると、このように2枚の放熱板を採用することにより放熱板の折り曲げに要する力が低減される。従って、筐体部へ大きな力がかからなくなり、放熱板の折り曲げ時に筐体部が損傷しなくなる。よって、製造歩留まりが向上して安価な発光装置を提供できる。
Here, since the lead members are pulled out from all different surfaces of the housing part 10, it is possible to prevent an excessive load from being concentrated on the housing part 10 when the pulled-out portion is bent. Thereby, damage to case part 10 can be prevented.
In particular, two heat sinks 51 and 52 are drawn out from the lower surface of the casing 10 and bent. Here, compared with the case where one heat radiating plate having the same area as the heat radiating plates 51 and 52 is used, the force required to bend the heat radiating plate is reduced by employing two heat radiating plates in this way. Therefore, a large force is not applied to the casing, and the casing is not damaged when the heat sink is bent. Therefore, the manufacturing yield can be improved and an inexpensive light-emitting device can be provided.

放熱板を3枚以上形成することもできる。この場合においても各放熱板は筐体部の下面から引き出されて端子保持部の下面に沿って折り曲げられる。放熱板の形状は任意に選択できる。各放熱板の形状を異ならせることができる。また、放熱板を筐体部の底面からはみ出すように大きく設計することもできる。これにより、発光装置を配線基板へ組付けるとき、放熱板の位置を目視で確認でき、配線板の接触位置に対する位置合わせが容易になる。
接続部にも熱伝導性があるので、一対の接続部とその間に配設される複数の放熱板は端子保持部において均等に分配されることが好ましい。
Three or more heat sinks can be formed. Also in this case, each heat radiating plate is pulled out from the lower surface of the housing portion and bent along the lower surface of the terminal holding portion. The shape of the heat sink can be arbitrarily selected. The shape of each heat sink can be made different. Further, the heat radiating plate can be designed so as to protrude from the bottom surface of the casing. As a result, when the light emitting device is assembled to the wiring board, the position of the heat sink can be visually confirmed, and alignment with the contact position of the wiring board is facilitated.
Since the connecting portion also has thermal conductivity, it is preferable that the pair of connecting portions and the plurality of heat sinks disposed therebetween are evenly distributed in the terminal holding portion.

図7に他の態様の第1のリード部材230及び第2のリード部材240を示す。図7Aは第1及び第2のリード部材230及び240が筐体部210へインサートされた状態を示し、図7Bは第1及び第2のリード部材230及び240と筐体部210との分解図である。第1のリード部材230はその基部231が筐体部210へインサートされ、当該基部231へLEDチップがマウントされる。筐体部210においてLEDチップに対向する部分は開口部211となり、当該開口部211を介して基部231が露出し、当該露出部分へLEDチップがマウントされることとなる。第1のリード部材231において放熱板となる部分251,252と基部231とを繋ぐ連結部261,262は筐体部210の材料で被覆されている。この材料部分215,216が反射ケースの底部反射面を構成する。放熱板となる部分251,252が図で奥側へ折り曲げられるとき、この材料部分215,216が基部231を押さえつけ、基部231が捲れ上がることを防止している。
また、連結部261,262は凹部271〜274により細幅に形成されているので、小さい力で折り曲げることができる。これにより筐体部210の損傷を未然に防止できる。
FIG. 7 shows a first lead member 230 and a second lead member 240 of another embodiment. FIG. 7A shows a state in which the first and second lead members 230 and 240 are inserted into the housing portion 210, and FIG. 7B is an exploded view of the first and second lead members 230 and 240 and the housing portion 210. It is. The base portion 231 of the first lead member 230 is inserted into the housing portion 210, and the LED chip is mounted on the base portion 231. A portion of the housing portion 210 that faces the LED chip is an opening 211, and the base 231 is exposed through the opening 211, and the LED chip is mounted on the exposed portion. In the first lead member 231, the connecting portions 261 and 262 that connect the portions 251 and 252 serving as heat sinks and the base portion 231 are covered with the material of the housing portion 210. The material portions 215 and 216 constitute the bottom reflecting surface of the reflecting case. When the portions 251 and 252 serving as heat sinks are bent to the back side in the drawing, the material portions 215 and 216 press the base 231 to prevent the base 231 from rolling up.
Further, since the connecting portions 261 and 262 are formed narrow by the concave portions 271 to 274, they can be bent with a small force. Thereby, damage of the housing | casing part 210 can be prevented beforehand.

更には、細幅の連結部261,262は、図7(A)に示される通り、筐体部210の幅内に収まるので、換言すれば連結部261,262の幅が筐体部210の幅より狭いので、当該連結部261,262において放熱板となる部分251,252を基部231から折り曲げるとき、筐体部210が支えとなって折り曲げ作業が容易になるとともに、基部231が剥離することを未然に防止できる。
上記において、凹部271から274はいずれも基部231の中心軸方向へえぐれている。これにより、折り曲げ可能な領域が広がるので、より狭い幅の筐体部210にも適用可能となる。即ち、筐体部210の設計自由度が向上する。
Furthermore, since the narrow connection portions 261 and 262 fit within the width of the housing portion 210 as shown in FIG. 7A, in other words, the width of the connection portions 261 and 262 is smaller than that of the housing portion 210. Since it is narrower than the width, when the portions 251 and 252 serving as heat sinks in the connecting portions 261 and 262 are bent from the base portion 231, the casing portion 210 is supported and the bending work is facilitated, and the base portion 231 is peeled off. Can be prevented.
In the above, the recesses 271 to 274 are all pierced in the direction of the central axis of the base 231. As a result, the foldable region is widened, so that it can be applied to the casing unit 210 having a narrower width. That is, the degree of freedom in designing the housing unit 210 is improved.

図8には、実施例の発光装置1の使用態様を示す。
図8において符号70は配線基板であり、その表面に導電性の金属材料でパターンが形成されている。接続部33、43を配線基板の所定のパターンへ接続させ、半田付けする。符号73は半田を示す。このとき、放熱板51、52も配線基板表面のパターン部分へ接続させることが好ましい。放熱板51、52を金属材料へ接触させることにより熱引きを効果的に行えるからである。配線基板においてサーマルビア(金属材料が配線基板の厚さ方向へ貫通している部分)へ放熱板51,52を接触させることもできる。
In FIG. 8, the usage aspect of the light-emitting device 1 of an Example is shown.
In FIG. 8, reference numeral 70 denotes a wiring board, on which a pattern is formed of a conductive metal material. The connecting portions 33 and 43 are connected to a predetermined pattern on the wiring board and soldered. Reference numeral 73 denotes solder. At this time, it is preferable to connect the heat sinks 51 and 52 to the pattern portion on the surface of the wiring board. This is because heat sinking can be effectively performed by bringing the heat radiating plates 51 and 52 into contact with a metal material. In the wiring board, the heat radiation plates 51 and 52 can be brought into contact with thermal vias (portions where the metal material penetrates in the thickness direction of the wiring board).

LEDチップ60で発生した熱はもっぱら第1のリード部材30に伝わり、この熱は放熱板51、52及び接続部33を介して配線基板70へ放熱される。ここに、LEDチップ60に近い位置に放熱板51、52が形成されているため、LEDチップ60の熱を効率よく逃がすことができる。
放熱板もリード部材の一部であるので、この放熱板を電極として配線基板へ電気的に接続させてもよい。これにより、配線基板のパターンの自由度が向上する。
The heat generated in the LED chip 60 is transmitted exclusively to the first lead member 30, and this heat is radiated to the wiring board 70 via the heat radiation plates 51 and 52 and the connection portion 33. Here, since the heat sinks 51 and 52 are formed at positions close to the LED chip 60, the heat of the LED chip 60 can be efficiently released.
Since the heat sink is also a part of the lead member, this heat sink may be electrically connected to the wiring board as an electrode. Thereby, the freedom degree of the pattern of a wiring board improves.

このように構成された実施例の発光装置において、LEDチップ60から側方へ放出された光は底部反射部156で反射されて外部へ放出される。底部反射部156は白色樹脂からなるので、LEDチップ60からの光を効率よく乱反射(拡散反射)させる。
ちなみに、実施例の発光装置において底部反射部156を省略したもの(比較例)との発光出力の比較は次のようになった。なお、比較例においては銀メッキされたリード部材の基部の表面が反射ケースの底部に表出している。
初期発光出力と3000時間耐久試験後の出力の比較において、実施例の発光装置と実施例から白色反射層を除いた比較例の発光装置との出力比は実施例65%、比較例35%であった(図11(A)参照)。
In the light emitting device of the embodiment configured as described above, the light emitted from the LED chip 60 to the side is reflected by the bottom reflecting portion 156 and emitted to the outside. Since the bottom reflection part 156 is made of white resin, the light from the LED chip 60 is efficiently diffusely reflected (diffuse reflection).
Incidentally, the comparison of the light emission output with the light emitting device of the example in which the bottom reflecting portion 156 is omitted (comparative example) is as follows. In the comparative example, the surface of the base of the lead member plated with silver is exposed at the bottom of the reflection case.
In the comparison of the initial light emission output and the output after the 3000 hour endurance test, the output ratio of the light emitting device of the example and the light emitting device of the comparative example excluding the white reflective layer from the example is 65% of the example and 35% of the comparative example. (See FIG. 11A).

ここに、耐久試験は印加電流:50mA、環境温度:25℃の条件で行った。
比較例ではリード部材の基部が黒変していた。発光出力は発光装置の輝度を比較したものであり、実施例及び比較例の初期の輝度を100%としてその相対輝度で表している。
なお、3000時間耐久試験を印加電流:20mA、環境温度:85℃の条件としたとき、実施例の発光装置と比較例の発光装置との出力比は実施例65%、比較例35%であった(図11(B)参照)。
また、3000時間耐久試験を印加電流:20mA、環境温度:100℃の条件としたとき、実施例の発光装置と比較例の発光装置との出力比は実施例50%、比較例35%であった(図11(C)参照)。
Here, the durability test was performed under the conditions of applied current: 50 mA and environmental temperature: 25 ° C.
In the comparative example, the base portion of the lead member was blackened. The light emission output is a comparison of the luminance of the light emitting device, and is expressed as a relative luminance with the initial luminance of the example and the comparative example as 100%.
When the 3000 hour endurance test was performed under the conditions of an applied current of 20 mA and an environmental temperature of 85 ° C., the output ratio between the light emitting device of the example and the light emitting device of the comparative example was 65% of the example and 35% of the comparative example. (See FIG. 11B).
Further, when the 3000 hour endurance test was performed under the conditions of an applied current of 20 mA and an environmental temperature of 100 ° C., the output ratio between the light emitting device of the example and the light emitting device of the comparative example was 50% of the example and 35% of the comparative example. (See FIG. 11C).

上記の実施例において反射ケース11の反射面15は曲面に形成されているが、これを平面とすることも可能である(図12参照)。図12において図3と同一の要素には同一の符号を付してその説明を部分的に省略する。
図12の例では、底部反射部256(白色反射層)は平板状であって、かつLEDチップ60に対向する上面角がテーパ状にカットされている。これによりLEDチップ60から側方へ放出された光をより効率よく反射させられる。図12において符号250は反射面、符号255は側壁反射部を示している。
図3及び図12の例において、底部反射部156を筐体部10と別体とすることもできる。
In the above-described embodiment, the reflection surface 15 of the reflection case 11 is formed in a curved surface, but it may be a flat surface (see FIG. 12). 12, the same elements as those of FIG. 3 are denoted by the same reference numerals, and the description thereof is partially omitted.
In the example of FIG. 12, the bottom reflection portion 256 (white reflection layer) has a flat plate shape, and the upper surface angle facing the LED chip 60 is cut into a taper shape. Thereby, the light emitted from the LED chip 60 to the side can be reflected more efficiently. In FIG. 12, reference numeral 250 denotes a reflecting surface, and reference numeral 255 denotes a side wall reflecting portion.
In the example of FIGS. 3 and 12, the bottom reflecting portion 156 can be separated from the housing portion 10.

この発明は、上記発明の実施の形態及び実施例の説明に何ら限定されるものではない。特許請求の範囲の記載を逸脱せず、当業者が容易に想到できる範囲で種々の変形態様もこの発明に含まれる。   The present invention is not limited to the description of the embodiments and examples of the invention described above. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.

図1はこの発明の実施例の発光装置を斜視図であり、図1(A)は正面から見た斜視図、図1(B)は背面からみた斜視図である。FIG. 1 is a perspective view of a light emitting device according to an embodiment of the present invention, FIG. 1 (A) is a perspective view seen from the front, and FIG. 1 (B) is a perspective view seen from the back. 図2は同じく六面図であり、(A)は平面図、(B)は左側面図、(C)は正面図、(D)は右側面図、(E)は底面図、(F)は背面図である。FIG. 2 is also a six-sided view, (A) is a plan view, (B) is a left side view, (C) is a front view, (D) is a right side view, (E) is a bottom view, and (F). FIG. 図3は図2(C)におけるIII-III線断面図である。FIG. 3 is a cross-sectional view taken along line III-III in FIG. 図4は図2(A)におけるIV-IV線断面図である。4 is a cross-sectional view taken along line IV-IV in FIG. 図5は図2(A)におけるV-V線断面図である。FIG. 5 is a cross-sectional view taken along line VV in FIG. 図6は実施例の発光装置の製造過程を示す図である。FIG. 6 is a diagram showing a manufacturing process of the light emitting device of the embodiment. 図7は他の態様のリード部材を示し、図7(A)はリード部材と筐体部とが組み付けられた状態を示し、図7(B)はリード部材と筐体部とが分解された状態を示す。FIG. 7 shows another embodiment of the lead member, FIG. 7 (A) shows a state where the lead member and the casing are assembled, and FIG. 7 (B) shows the lead member and the casing disassembled. Indicates the state. 図8は同じく発光装置の使用態様図である。FIG. 8 is a usage diagram of the light emitting device. 図9は従来例の発光装置の構成を示す断面図である。FIG. 9 is a cross-sectional view showing a configuration of a conventional light emitting device. 図10は白色反射層5の作用を説明する図である。FIG. 10 is a diagram for explaining the operation of the white reflective layer 5. 図11は実施例及び比較例の発光装置の耐久試験結果を示すグラフである。FIG. 11 is a graph showing the durability test results of the light emitting devices of the example and the comparative example. 図12は他の実施例の発光装置の構成を示す断面図である。FIG. 12 is a cross-sectional view showing a configuration of a light emitting device according to another embodiment.

符号の説明Explanation of symbols

1 発光装置
2 発光素子
3 リード部材の基部
4、14 封止部材
10 筐体部
11 反射ケース
15 反射面
16,17 窓
20 端子保持部
23,24,25,26 切欠き
27,28,29 離隔部
30 第1のリード部材
31 基部
33 接続部
40 第2のリード部材
41 基部
43 接続部
51,52 放熱板
60 LEDチップ
DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Light-emitting element 3 Lead member base parts 4 and 14 Sealing member 10 Housing part 11 Reflective case 15 Reflective surface 16, 17 Window 20 Terminal holding part 23, 24, 25, 26 Notch 27, 28, 29 Separation Part 30 First lead member 31 Base part 33 Connection part 40 Second lead member 41 Base part 43 Connection parts 51, 52 Heat sink 60 LED chip

Claims (3)

配線基板に表面実装される側面発光型の発光装置であって、
反射ケースと該反射ケースの後部の端子保持部とを一体成形してなる筐体部と、
該筐体部へインサートされるリード部材であって、前記反射ケースの底壁部分の幅とほぼ等しい幅の基部を備え、該基部が銀メッキされているリード部材と、
前記筐体部と一体的に形成され、前記反射ケース内において前記リード部材の基部を被覆し、全面に椀状の曲面を有する白色反射層と、
前記反射ケース内に充填される封止材であって、シリコーン樹脂へ蛍光体を分散させてなる封止材と
を備え、
前記リード部材の基部には、発光素子をマウントする第1の領域と、前記発光素子からのボンディングワイヤをボンディングする第2の領域とが形成され、
前記白色反射層は、前記第1の領域と前記第2の領域の間において前記基部を被覆し、
前記白色反射層の椀状の曲面には窓が形成され、該窓を介して前記第2の領域が表出している発光装置。
A side-emitting type light emitting device that is surface-mounted on a wiring board,
A casing formed by integrally molding the reflecting case and the terminal holding portion at the rear of the reflecting case;
A lead member to be inserted into the housing portion, comprising a base portion having a width substantially equal to the width of the bottom wall portion of the reflection case, wherein the base portion is silver-plated;
A white reflective layer formed integrally with the housing , covering the base of the lead member in the reflective case, and having a bowl-shaped curved surface on the entire surface;
A sealing material filled in the reflective case, wherein the phosphor is dispersed in a silicone resin;
With
At the base of the lead member, a first region for mounting a light emitting element and a second region for bonding a bonding wire from the light emitting element are formed,
The white reflective layer covers the base between the first region and the second region,
A light emitting device in which a window is formed on the bowl-shaped curved surface of the white reflective layer, and the second region is exposed through the window .
前記リード部材の基部の表面と前記白色反射層の表面との距離は前記リード部材の基部の表面と該基部にマウントされる発光素子の表面との距離より短い、請求項1に記載の発光装置。 The light emitting device according to claim 1 , wherein a distance between the surface of the base portion of the lead member and the surface of the white reflective layer is shorter than a distance between the surface of the base portion of the lead member and the surface of the light emitting element mounted on the base portion. . 前記第1の領域は前記反射ケースの底壁部のほぼ中央に位置し、前記第2の領域は反射ケースの側壁に接して位置する、請求項1又は2に記載の発光装置。 3. The light emitting device according to claim 1, wherein the first region is located substantially at a center of a bottom wall portion of the reflection case, and the second region is located in contact with a side wall of the reflection case.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431567B2 (en) 2010-11-03 2019-10-01 Cree, Inc. White ceramic LED package
US8723409B2 (en) 2010-04-07 2014-05-13 Nichia Corporation Light emitting device
JP5786278B2 (en) * 2010-04-07 2015-09-30 日亜化学工業株式会社 Light emitting device
US8901583B2 (en) * 2010-04-12 2014-12-02 Cree Huizhou Opto Limited Surface mount device thin package
US9831393B2 (en) 2010-07-30 2017-11-28 Cree Hong Kong Limited Water resistant surface mount device package
WO2012023246A1 (en) * 2010-08-20 2012-02-23 シャープ株式会社 Light emitting diode package
CN102376736B (en) * 2010-08-20 2016-03-02 深圳路升光电科技有限公司 Outer black words spoken by an actor from offstage formula high brightness Full-color SMC and LED display
US9240395B2 (en) 2010-11-30 2016-01-19 Cree Huizhou Opto Limited Waterproof surface mount device package and method
JP5952096B2 (en) * 2012-06-12 2016-07-13 浜松ホトニクス株式会社 Optical semiconductor device
US9711489B2 (en) 2013-05-29 2017-07-18 Cree Huizhou Solid State Lighting Company Limited Multiple pixel surface mount device package
JP6252023B2 (en) * 2013-08-05 2017-12-27 日亜化学工業株式会社 Light emitting device
JP6583297B2 (en) * 2017-01-20 2019-10-02 日亜化学工業株式会社 Composite substrate for light emitting device and method for manufacturing light emitting device
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CN110034223A (en) * 2019-03-13 2019-07-19 东莞中之光电股份有限公司 A kind of large power white light LED lamp bead
JP7057512B2 (en) * 2019-08-30 2022-04-20 日亜化学工業株式会社 Light emitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19829197C2 (en) * 1998-06-30 2002-06-20 Siemens Ag Component emitting and / or receiving radiation
JP3632507B2 (en) * 1999-07-06 2005-03-23 日亜化学工業株式会社 Light emitting device
JP3972889B2 (en) * 2002-12-09 2007-09-05 日亜化学工業株式会社 Light emitting device and planar light source using the same
JP2005252168A (en) * 2004-03-08 2005-09-15 Nichia Chem Ind Ltd Surface mount light emitting device
JP2006216821A (en) * 2005-02-04 2006-08-17 Citizen Electronics Co Ltd Light emitting diode
JP2006314082A (en) * 2005-04-04 2006-11-16 Nippon Sheet Glass Co Ltd Light-emitting unit, illuminating device using same unit and image reading apparatus
JP5205724B2 (en) * 2006-08-04 2013-06-05 日亜化学工業株式会社 Light emitting device
JP2009099771A (en) * 2007-10-17 2009-05-07 Rohm Co Ltd Semiconductor light-emitting module

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