JP2007201405A - Light-emitting diode device - Google Patents

Light-emitting diode device Download PDF

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JP2007201405A
JP2007201405A JP2006198088A JP2006198088A JP2007201405A JP 2007201405 A JP2007201405 A JP 2007201405A JP 2006198088 A JP2006198088 A JP 2006198088A JP 2006198088 A JP2006198088 A JP 2006198088A JP 2007201405 A JP2007201405 A JP 2007201405A
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emitting diode
recess
resin
light emitting
light
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Inventor
Tomohiro Sanpei
友広 三瓶
Masami Iwamoto
正己 岩本
Nobuhiro Tamura
暢宏 田村
Akiko Saito
明子 斉藤
Masahiro Izumi
昌裕 泉
Kiyoko Kawashima
淨子 川島
Hiroyuki Matsunaga
啓之 松永
Mitsuru Shiozaki
満 塩崎
Shinji Nogi
新治 野木
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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Priority to JP2006198088A priority Critical patent/JP2007201405A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode device which can improve radiation and make the manufacturing easy simultaneously. <P>SOLUTION: The diode device comprises: a concave portion forming portion 4 constructed by forming a concave portion 5 including a floodlighting aperture 5a by a thermoplastic with a thermal conductivity of 1.0-9.0[W/mK]; a lead frame 3 formed on an inner bottom facing the floodlighting aperture of the concave portion; a light-emitting diode chip 7, which is arranged inside the concave portion, electrically connected to a conductive layer; and a resin layer 2 which is formed by a resin with a thermal conductivity of 1.0-9.0[W/mK] containing inorganic filler, and joined to the concave portion forming portion. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は発光ダイオード（ＬＥＤ）チップを具備した発光ダイオード装置に関する。   The present invention relates to a light emitting diode device having a light emitting diode (LED) chip.

従来の発光ダイオード装置の一例としては、発光ダイオードチップを配設したケース（カップ）内に、合成樹脂を充填して発光ダイオードチップをケース内に封止した面実装タイプのものが知られている（例えば特許文献１参照）。   As an example of a conventional light emitting diode device, a surface mount type device in which a synthetic resin is filled in a case (cup) in which a light emitting diode chip is disposed and the light emitting diode chip is sealed in the case is known. (For example, refer to Patent Document 1).

また、この種の発光ダイオード装置の中には、ケースをＰＰＡ（ポリフタルアミド）等の合成樹脂により形成するものも知られているが、この合成樹脂では、熱伝導率が例えば約０．３［Ｗ／ｍ・Ｋ］程度であり、放熱性が低いので、発光ダイオードチップの発光効率が温度上昇に伴って低下するという課題がある。   Also, among this type of light emitting diode device, there is known a case in which the case is formed of a synthetic resin such as PPA (polyphthalamide), but this synthetic resin has a thermal conductivity of, for example, about 0.3. Since it is about [W / m · K] and the heat dissipation is low, there is a problem that the light emission efficiency of the light-emitting diode chip decreases as the temperature rises.

図７は発光ダイオードチップの温度上昇に伴って発光ダイオードチップの発光効率が低下する特性曲線Ａを示すグラフである。すなわち、特性曲線Ａは導体層である回路パターン上に載置固定されて電気的に接続される発光ダイオードチップの底面電極側の温度が２５℃であるときの、例えば波長４７０ｎｍの発光強度を１００％としたときに、その発光強度が底面電極側の温度上昇に伴って漸次低下する特性を示している。   FIG. 7 is a graph showing a characteristic curve A in which the light emission efficiency of the light emitting diode chip decreases as the temperature of the light emitting diode chip increases. That is, the characteristic curve A indicates, for example, the emission intensity at a wavelength of 470 nm when the temperature on the bottom electrode side of the light-emitting diode chip placed and fixed on the circuit pattern as the conductor layer is 25 ° C., for example, 100 %, The emission intensity gradually decreases with increasing temperature on the bottom electrode side.

そこで、第２の従来技術の発光ダイオード装置では、その温度上昇を抑制するためにセラミック基板に放熱孔を穿設し、さらに、この放熱孔の内面側に補助セラミックシートを設け、この補助セラミックシート上に発光ダイオードチップを実装することにより、発光ダイオードチップの放熱性の向上を図ったものが知られている（例えば特許文献２参照）。また、金属基板上に樹脂シートを介して金型プレートを重ね合せ、加熱加圧することにより、樹脂シートからなる絶縁層を積層一体化した発光ダイオード表示装置が知られている（例えば特許文献３参照。以下、第３の従来技術という。）。
特開２００２−４３６２５号公報 特開２００２−３５３５１５号公報 特開２００３−１３３５９６号公報 Therefore, in the second prior art light emitting diode device, in order to suppress the temperature rise, a heat radiating hole is formed in the ceramic substrate, and an auxiliary ceramic sheet is provided on the inner surface side of the heat radiating hole. A device in which a light emitting diode chip is mounted thereon to improve heat dissipation of the light emitting diode chip is known (see, for example, Patent Document 2). Further, there is known a light emitting diode display device in which an insulating layer made of a resin sheet is laminated and integrated by superimposing a mold plate on a metal substrate via a resin sheet and applying heat and pressure (see, for example, Patent Document 3). Hereinafter, this is referred to as the third prior art.)
JP 2002-43625 A JP 2002-353515 A JP 2003-133596 A

しかしながら、この第２の従来技術では、製造加工性において合成樹脂よりも劣るセラミック基板に放熱孔を穿設し、この放熱孔の内面側に補助セラミックシートを設ける等構成が複雑であるので、これら放熱孔等の加工が容易ではないという課題がある。   However, in the second prior art, since the heat dissipation holes are formed in the ceramic substrate that is inferior to the synthetic resin in manufacturing processability, and the auxiliary ceramic sheet is provided on the inner surface side of the heat dissipation holes, these structures are complicated. There exists a subject that processing of a heat radiating hole etc. is not easy.

また、第３の従来技術では、基板が金属製であるので、樹脂よりも加工性が劣るうえに、プレス成型であるので、製造工程数が多いという課題がある。   Further, in the third prior art, since the substrate is made of metal, the workability is inferior to that of the resin, and further, there is a problem that the number of manufacturing steps is large because of press molding.

本発明はこのような事情を考慮してなされたもので、放熱性と製造容易性の向上を共に図った発光ダイオード装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a light-emitting diode device that improves both heat dissipation and manufacturability.

請求項１に係る発明は、熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部を形成してなる凹部形成部と；凹部の投光開口に対向する内底面上に形成された導電層と；凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部に接合された樹脂層と；を具備していることを特徴とする発光ダイオード装置である。   According to a first aspect of the present invention, there is provided a recess forming portion formed by forming a recess having a projection opening with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K]; A conductive layer formed on the inner bottom surface facing the light aperture; a light emitting diode chip disposed in the recess and electrically connected to the conductive layer; and a thermal conductivity containing an inorganic filler of 1.0 to And a resin layer formed of a resin of 9.0 [W / m · K] and bonded to the recess forming portion.

請求項２に係る発明は、熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部を形成してなる凹部形成部と；凹部の投光開口に対向する内底面上に形成された導電層と；凹部内に配設された蛍光体層と；凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部に接合された樹脂層と；を具備していることを特徴とする発光ダイオード装置である。   According to a second aspect of the present invention, there is provided a recess forming portion formed by forming a recess having a light projection opening with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K]; A conductive layer formed on the inner bottom surface facing the light aperture; a phosphor layer disposed in the recess; a light emitting diode chip disposed in the recess and electrically connected to the conductive layer; and inorganic And a resin layer formed of a resin having a thermal conductivity of 1.0 to 9.0 [W / m · K] containing a filler and bonded to the recess forming portion. It is a light emitting diode device.

請求項３に係る発明は、熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部および嵌合部を形成してなる凹部形成部と；凹部の投光開口に対向する内底面上に形成された導電層と；凹部内に配設された蛍光体層と；凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部の嵌合部に嵌合された被嵌合部を有する樹脂層と；を具備していることを特徴とする発光ダイオード装置である。   According to a third aspect of the present invention, there is provided a recess forming portion formed by forming a recess having a projection opening and a fitting portion with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K]. A conductive layer formed on the inner bottom surface facing the projection opening of the recess; a phosphor layer disposed in the recess; a light emitting diode disposed in the recess and electrically connected to the conductive layer A fitting portion formed of a resin having a thermal conductivity of 1.0 to 9.0 [W / m · K] containing an inorganic filler and fitted to the fitting portion of the recess forming portion; A light-emitting diode device comprising: a resin layer having;

請求項４に係る発明は、凹部形成部は、合成樹脂製基材に、無機フィラーを５０〜９０質量％含有してなることを特徴とする請求項１ないし３のいずれか一記載の発光ダイオード装置である。   The invention according to claim 4 is the light-emitting diode according to any one of claims 1 to 3, wherein the recess forming portion contains 50 to 90% by mass of an inorganic filler in a synthetic resin base material. Device.

請求項５に係る発明は、無機フィラーは、直径が１００μｍ以下の球形であることを特徴とする請求項４記載の発光ダイオード装置である。   The invention according to claim 5 is the light emitting diode device according to claim 4, wherein the inorganic filler has a spherical shape with a diameter of 100 μm or less.

請求項６に係る発明は、前記凹部形成部は、反射率が９０％以上の樹脂により形成されていることを特徴とする請求項１ないし５のいずれか一記載の発光ダイオード装置である。   The invention according to claim 6 is the light emitting diode device according to any one of claims 1 to 5, wherein the recess forming portion is formed of a resin having a reflectance of 90% or more.

請求項７に係る発明は、前記凹部形成部は、凹部に一体に形成された底部を有し、この底部には、前記発光ダイオードチップおよびそのボンディングワイヤを挿通させる挿通孔をそれぞれ形成していることを特徴とする請求項１ないし６のいずれか一記載の発光ダイオード装置である。   In the invention according to claim 7, the recess forming portion has a bottom portion formed integrally with the recess, and an insertion hole through which the light emitting diode chip and its bonding wire are inserted is formed in the bottom portion. The light emitting diode device according to claim 1, wherein the light emitting diode device is a light emitting diode device.

請求項８に係る発明は、樹脂層は、その樹脂基材が熱可塑性樹脂であり、この樹脂層の射出成型時に、この樹脂層に凹部形成部を溶着させることにより接合されていることを特徴とする請求項１ないし７のいずれか一記載の発光ダイオード装置である。   The invention according to claim 8 is characterized in that the resin base material is a thermoplastic resin, and the resin layer is joined by welding a recess forming portion to the resin layer at the time of injection molding of the resin layer. A light-emitting diode device according to any one of claims 1 to 7.

請求項９に係る発明は、樹脂層の比抵抗が１０２〜１０１３Ω・ｃｍであることを特徴とする請求項１〜８のいずれか一記載の発光ダイオード装置である。 The invention according to claim 9 is the light-emitting diode device according to any one of claims 1 to 8, wherein the specific resistance of the resin layer is 10 2 to 10 13 Ω · cm.

請求項１に係る発明によれば、凹部形成部と樹脂層の樹脂基材が加工性に優れた高放熱性合成樹脂であるので、凹部形成部と樹脂層を射出成型等により容易に形成することができる。   According to the first aspect of the present invention, since the resin substrate of the recess forming portion and the resin layer is a highly heat-dissipating synthetic resin excellent in processability, the recess forming portion and the resin layer are easily formed by injection molding or the like. be able to.

凹部形成部が熱可塑性樹脂よりなるので、さらに、加工性を向上させることができると共に、無機フィラーを含有しないので、光の反射率を向上させることができる。   Since the recessed portion forming portion is made of a thermoplastic resin, the workability can be further improved and the inorganic filler is not contained, so that the light reflectance can be improved.

また、この凹部形成部と樹脂層の熱伝導率が１．０［Ｗ／ｍ・Ｋ］未満である場合には、例えば樹脂基材に含有される無機フィラーの含有量が少量であるので、この樹脂基材の流動性を向上させて加工容易性を向上させることができるが、放熱性が発光ダイオード装置の放熱性としては不十分である。   Further, when the thermal conductivity of the recess forming portion and the resin layer is less than 1.0 [W / m · K], for example, the content of the inorganic filler contained in the resin base material is small, Although the fluidity of the resin substrate can be improved to improve the processability, the heat dissipation is insufficient as the heat dissipation of the light emitting diode device.

また、この樹脂の熱伝導率が９．０［Ｗ／ｍ・Ｋ］を超える場合には、樹脂の放熱性が向上するものの、樹脂基材に含有される無機フィラーが増加して樹脂の流動性が低下して加工容易性が低下する。   In addition, when the thermal conductivity of the resin exceeds 9.0 [W / m · K], the heat dissipation of the resin is improved, but the inorganic filler contained in the resin base material increases, and the resin flows. And the ease of processing is reduced.

これに対し、本発明は凹部形成部と樹脂層の熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］であるので、放熱性向上と加工容易性とを共に向上させることができる。   On the other hand, in the present invention, since the thermal conductivity of the recess forming portion and the resin layer is 1.0 to 9.0 [W / m · K], it is possible to improve both the heat dissipation and the processability. it can.

このために、発光ダイオードチップの発光効率がその温度上昇により低下するのを防止または抑制することができる。   For this reason, it can prevent or suppress that the luminous efficiency of a light emitting diode chip falls by the temperature rise.

そして、樹脂層は合成樹脂製基材に無機フィラーを含有しているので、放熱性を向上させることができる。したがって本発明によれば、発光ダイオードチップを収容した凹部形成部により発光ダイオードチップの発光の反射率を向上させることができると共に、発光ダイオードチップや導電層の発熱を放熱するための放熱性を樹脂層により向上させることができる。   And since the resin layer contains the inorganic filler in the synthetic resin base material, heat dissipation can be improved. Therefore, according to the present invention, the concave portion forming portion that accommodates the light emitting diode chip can improve the reflectance of light emission of the light emitting diode chip, and also has a heat dissipation property for radiating heat generated from the light emitting diode chip and the conductive layer. It can be improved by layer.

請求項２に係る発明によれば、請求項１に係る発明と同様の凹部形成部、樹脂層を具備しているので、請求項１に係る発明とほぼ同様の作用効果を奏することができる。   According to the second aspect of the present invention, since the concave portion forming portion and the resin layer similar to those of the first aspect of the present invention are provided, the same effects as the first aspect of the present invention can be achieved.

また、請求項２に係る発明によれば、蛍光体層を具備しているので、この蛍光体層の蛍光体として発光ダイオードの発光により励起されて所要色を発光するものを使用することにより、発光ダイオードの発光と蛍光体層の発光とを合成した合成光を出力することができる。   In addition, according to the invention according to claim 2, since the phosphor layer is provided, by using the phosphor of the phosphor layer that is excited by the light emission of the light emitting diode and emits the required color, Synthetic light obtained by synthesizing the light emission of the light emitting diode and the light emission of the phosphor layer can be output.

請求項３に係る発明によれば、請求項１に係る発明と同様の凹部形成部、樹脂層を具備しているので、請求項１に係る発明とほぼ同様の作用効果を奏することができる。   According to the invention of claim 3, since the concave portion forming portion and the resin layer similar to those of the invention of claim 1 are provided, it is possible to achieve substantially the same operational effects as the invention of claim 1.

また、請求項３に係る発明によれば、凹部形成部と樹脂層とを、これらの嵌合部と被嵌合部とを単に嵌合させることにより、簡単迅速に一体に結合させることができる。このために、樹脂層と凹部形成部との結合位置の位置決め精度の向上と発光ダイオード装置としての製造効率を向上させることができる。   Moreover, according to the invention which concerns on Claim 3, a recessed part formation part and a resin layer can be combined simply and rapidly by simply fitting these fitting parts and a to-be-fitted part. . For this reason, it is possible to improve the positioning accuracy of the coupling position between the resin layer and the recess forming portion and to improve the manufacturing efficiency of the light emitting diode device.

請求項４に係る発明によれば、高放熱性合成樹脂は、合成樹脂製基材に含有される無機フィラーの含有率が５０質量％以上であり、加工性に優れた合成樹脂が５０質量％以下であるので、加工容易性を維持しつつ、放熱性を向上させることができる。   According to the invention which concerns on Claim 4, the content rate of the inorganic filler contained in the base material made from a synthetic resin is 50 mass% or more, and synthetic resin excellent in workability is 50 mass%. Since it is the following, heat dissipation can be improved, maintaining processability.

また、無機フィラーの含有量が９０％以下であるので、放熱性をさらに向上させることができるうえに、加工性に優れた合成樹脂の含有率が１０質量％以上であるので、加工容易性も保持することができる。   Moreover, since the content of the inorganic filler is 90% or less, the heat dissipation can be further improved, and the content of the synthetic resin excellent in processability is 10% by mass or more, so that the processability is also improved. Can be held.

請求項５に係る発明によれば、無機フィラーが直径１００μｍ以下の球形であるので、射出成形時の高放熱性合成樹脂の射出性を向上させることができ、成形型への細密充填が可能となる。   According to the invention of claim 5, since the inorganic filler has a spherical shape with a diameter of 100 μm or less, the injection property of the high heat dissipation synthetic resin at the time of injection molding can be improved, and the mold can be closely packed. Become.

請求項６に係る発明によれば、凹部形成部を、反射率が９０％以上の樹脂により形成しているので、凹部内に反射層を別途形成しない場合でも、凹部内面を反射面に形成することができる。このために、発光ダイオードチップおよび蛍光体層から凹部内面に照射されの光を投光開口側へ反射させる反射光量を増加させることができる。   According to the invention of claim 6, since the recess forming portion is formed of a resin having a reflectance of 90% or more, the inner surface of the recess is formed on the reflecting surface even when the reflective layer is not separately formed in the recess. be able to. Therefore, it is possible to increase the amount of reflected light that reflects the light emitted from the light emitting diode chip and the phosphor layer to the inner surface of the concave portion toward the projection opening.

このために、投光開口から外部へ出力される出力光を向上させることができる。   For this reason, the output light output to the exterior from a light projection opening can be improved.

請求項７に係る発明によれば、凹部とその底部とを一体に形成しているので、この凹部の底部の反射率を向上させることができる。   According to the seventh aspect of the present invention, since the concave portion and the bottom portion are integrally formed, the reflectance of the bottom portion of the concave portion can be improved.

このために、凹部の底部上に位置する発光ダイオードチップや蛍光体層、凹部内面から当該底部に入射される光の反射効率を向上させることができる。   For this reason, it is possible to improve the reflection efficiency of light incident on the bottom portion from the light emitting diode chip and the phosphor layer located on the bottom portion of the concave portion and the inner surface of the concave portion.

このために、凹部の底部に対向する投光開口から出力される出力光を向上させることができる。   For this reason, the output light output from the light projection opening which opposes the bottom part of a recessed part can be improved.

請求項８に係る発明によれば、請求項１に係る発明と同様の凹部形成部、樹脂層を具備しているので、請求項１に係る発明とほぼ同様の作用効果を奏することができる。   According to the eighth aspect of the invention, since the concave portion forming portion and the resin layer similar to those of the first aspect of the invention are provided, the same operational effects as those of the first aspect of the invention can be achieved.

また、請求項８に係る発明によれば、樹脂層が熱可塑性樹脂からなるので、この樹脂層の射出成型時に、この樹脂層に凹部形成部を溶着させることにより簡単に接合することができる。このために、樹脂層と凹部形成部との接合力を強化することができる。   According to the eighth aspect of the present invention, since the resin layer is made of a thermoplastic resin, the resin layer can be easily joined by welding the recess forming portion during injection molding of the resin layer. For this reason, the bonding force between the resin layer and the recess forming portion can be enhanced.

請求項９に係る発明によれば、樹脂層の比抵抗が１０２〜１０１３Ω・ｃｍであって、高抵抗であるので、発光ダイオードチップに通電される電流が樹脂層を介してリークするリーク電流を低減することができる。 According to the ninth aspect of the invention, since the specific resistance of the resin layer is 10 2 to 10 13 Ω · cm and high resistance, the current supplied to the light emitting diode chip leaks through the resin layer. Leakage current can be reduced.

以下、本発明の実施形態を添付図面に基づいて説明する。なお、これら複数の添付図面中、同一または相当部分には同一符号を付している。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected to the same or an equivalent part in these several accompanying drawings.

図１は本発明の第１の実施形態に係る発光ダイオード装置１の要部縦断面図である。この発光ダイオード装置１は樹脂層の一例である実装部２の図１中上面上に、導電層の一例である平板状のリードフレーム３を配設し、さらに、このリードフレーム３の上面上と実装部２の上面上に、凹部形成部４を配設している。   FIG. 1 is a longitudinal sectional view of an essential part of a light emitting diode device 1 according to a first embodiment of the present invention. In the light emitting diode device 1, a flat lead frame 3, which is an example of a conductive layer, is disposed on the upper surface of the mounting portion 2, which is an example of a resin layer, in FIG. 1. On the upper surface of the mounting portion 2, the recess forming portion 4 is disposed.

すなわち、図２，図３にも示すように凹部形成部４は熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の高放熱性と、反射率が９０％以上の高反射率特性とを共に有する熱可塑性樹脂により、投光開口５ａを有する円錐台状の凹部５を形成している。高放熱性かつ高反射性樹脂としては、例えばＰＢＴ（ポリブチレンテレフタレート）やＰＰＡを使用することができる。ＰＢＴの反射率は約９７％程度、ＰＰＡの反射率は約９４％であり、いずれも９０％以上である。   That is, as shown in FIGS. 2 and 3, the recess forming portion 4 has a high heat dissipation property with a thermal conductivity of 1.0 to 9.0 [W / m · K] and a high reflectivity with a reflectance of 90% or more. The frustoconical concave portion 5 having the light projection opening 5a is formed of a thermoplastic resin having both the rate characteristics. For example, PBT (polybutylene terephthalate) or PPA can be used as the high heat dissipation and highly reflective resin. The reflectance of PBT is about 97%, and the reflectance of PPA is about 94%, both of which are 90% or more.

また、凹部形成部４は、凹部５の底部の図１中左右両端部に、嵌合部の一例として左右一対の嵌合凹部６ａ，６ｂを形成しており、例えば射出成型等により一体に形成されている。   Moreover, the recessed part formation part 4 forms the left-right paired fitting recessed part 6a, 6b as an example of a fitting part in the right-and-left both ends in FIG. 1 of the bottom part of the recessed part 5, for example, forms integrally by injection molding etc. Has been.

リードフレーム３は凹部５の投光開口５ａに対向する内底面上にて凹部５内で一部が露出する陰極側と陽極側の回路パターン（配線パターン）３ａ，３ｂを配設している。これら一対の回路パターン３ａ，３ｂの一方、例えば３ａの露出面上に例えば青色に発光する青色発光ダイオードチップ７を載置固定して、この青色発光ダイオードチップ７の底面電極を一方の回路パターン３ａに接続している。   The lead frame 3 is provided with cathode-side and anode-side circuit patterns (wiring patterns) 3a and 3b that are partially exposed in the recess 5 on the inner bottom surface of the recess 5 that faces the projection opening 5a. One of the pair of circuit patterns 3a and 3b, for example, a blue light emitting diode chip 7 that emits blue light, for example, is placed and fixed on the exposed surface of 3a, and the bottom electrode of the blue light emitting diode chip 7 is attached to one circuit pattern 3a. Connected to.

青色発光ダイオードチップ７は、その図１中上面の上面電極をボンディングワイヤ８により他方の回路パターン３ｂの露出面に電気的に接続している。   The blue light emitting diode chip 7 has its upper surface electrode in FIG. 1 electrically connected to the exposed surface of the other circuit pattern 3 b by a bonding wire 8.

そして、凹部５内には黄色蛍光体層９が形成されている。黄色蛍光体層９はエポキシ樹脂等の透明樹脂に黄色蛍光体を分散させてなる樹脂を凹部５内に充填することにより形成される。   A yellow phosphor layer 9 is formed in the recess 5. The yellow phosphor layer 9 is formed by filling the recess 5 with a resin obtained by dispersing a yellow phosphor in a transparent resin such as an epoxy resin.

一方、実装部２は熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の高放熱性の熱可塑性樹脂に無機フィラーを含有してなる高放熱性樹脂により、例えば射出成型等により一体に形成されている。   On the other hand, the mounting part 2 is made of a highly heat-dissipating resin containing an inorganic filler in a highly heat-dissipating thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K]. Are integrally formed.

高放熱合成樹脂は、ＰＡ（ポリアミド）やＰＰＡ（ポリフタルアミド）、ＰＰＳ（ポリフェニレン・サルファイド）、ＰＥＩ（ポリエーテル・イミド）、ＰＢＴ（ポリエチレン・フレフタレート）、ＰＥＴ（ポリエチレン・テレフタレート）、ＰＣ（ポリカーボネート）、ＡＢＳ（アクリロニトリル・ブタジェン・スチレン）等の樹脂基材に、無機フィラーを５０〜９０質量％含有することにより、熱伝導率を１．０〜９．０［Ｗ／ｍ・Ｋ］にし、比抵抗を１０２〜１０１３に構成している。 High heat radiation synthetic resins include PA (polyamide), PPA (polyphthalamide), PPS (polyphenylene sulfide), PEI (polyether imide), PBT (polyethylene phthalate), PET (polyethylene terephthalate), PC ( Polycarbonate), ABS (acrylonitrile, butadiene, styrene) and other resin base materials contain an inorganic filler in an amount of 50 to 90% by mass, so that the thermal conductivity is 1.0 to 9.0 [W / m · K]. The specific resistance is 10 2 to 10 13 .

無機フィラーは、アルミナ、マグネシア、ベリリア、シリカ、窒化ホウ素、炭化アルミニウム、炭化ケイ素、炭化ホウ素、炭化チタン、窒化ケイ素、ダイヤモンド、鉄、アルミニウム、銅の少なくとも１種またはこれらの２種以上の組合せからなる。また、無機フィラーは、直径が１００μｍ以下の球形に形成されている。   The inorganic filler is made of at least one of alumina, magnesia, beryllia, silica, boron nitride, aluminum carbide, silicon carbide, boron carbide, titanium carbide, silicon nitride, diamond, iron, aluminum, copper, or a combination of two or more thereof. Become. The inorganic filler is formed in a spherical shape having a diameter of 100 μm or less.

そして、実装部２は、その図１中、左右両端部上面に、被嵌合部の一例である左右一対の嵌合凸部１０ａ，１０ｂをそれぞれ一体に突設しており、これら嵌合凸部１０ａ，１０ｂを凹部形成部４の一対の嵌合凹部６ａ，６ｂ内に押し込み嵌合させることにより、実装部２と凹部形成部４とを一体的に結合させることができる。   The mounting portion 2 has a pair of left and right fitting projections 10a and 10b, which are examples of fitted portions, integrally projecting from the upper surfaces of both left and right ends in FIG. By mounting and fitting the portions 10 a and 10 b into the pair of fitting concave portions 6 a and 6 b of the concave portion forming portion 4, the mounting portion 2 and the concave portion forming portion 4 can be integrally coupled.

したがって、この発光ダイオード装置１によれば、一対の回路パターン３ａ，３ｂを介してダイオードチップ７に直流電力が供給されると、青色発光ダイオードチップ７が青色に発光する。この青色発光は黄色蛍光体層９を励起して黄色光を発光させると共に、この黄色光と混合されて白色光に変換され、投光開口５ａから外部へ放射される。   Therefore, according to the light emitting diode device 1, when DC power is supplied to the diode chip 7 via the pair of circuit patterns 3a and 3b, the blue light emitting diode chip 7 emits blue light. The blue light emission excites the yellow phosphor layer 9 to emit yellow light, is mixed with the yellow light, is converted into white light, and is emitted to the outside from the projection opening 5a.

また、実装部２は、熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の高放熱性合成樹脂であるので、発光ダイオード装置１の放熱性を向上させることができる。このために、青色発光ダイオードチップ７が温度上昇のために発光効率が低下するのを抑制することができる。なお、高放熱性合成樹脂の熱伝導率は９．０［Ｗ／ｍ・Ｋ］以上でもよい。この場合、合成樹脂基材に含有される無機フィラーの含有量が増加するので、合成樹脂基材の流動性が低下し、加工容易性が低下するが、放熱性をさらに向上させることができる。   Moreover, since the mounting part 2 is a high heat dissipation synthetic resin with a thermal conductivity of 1.0 to 9.0 [W / m · K], the heat dissipation of the light-emitting diode device 1 can be improved. For this reason, it can suppress that the light emission efficiency falls by the blue light emitting diode chip | tip 7 due to a temperature rise. The thermal conductivity of the high heat dissipation synthetic resin may be 9.0 [W / m · K] or more. In this case, since the content of the inorganic filler contained in the synthetic resin base material increases, the fluidity of the synthetic resin base material decreases and the processability decreases, but the heat dissipation can be further improved.

さらに、高放熱性合成樹脂は、その合成樹脂基材に含有させた無機フィラーが直径１００μｍの球形であるので、この高放熱性合成樹脂の射出成形時のノズル射出効率を向上させることができ、細密充填が可能になる。   Furthermore, since the inorganic filler contained in the synthetic resin base material has a spherical shape with a diameter of 100 μm, the high heat dissipation synthetic resin can improve the nozzle injection efficiency during the injection molding of the high heat dissipation synthetic resin, Fine packing is possible.

また、高放熱性合成樹脂製の実装部２は比抵抗が１０２〜１０１３Ω・ｃｍであって、高抵抗、すなわち、電気絶縁性を有するので、発光ダイオード７に通電された電流が一方の回路パターン３ａから他方の回路パターン３ｂへ、これら両者間の実装部２の上面を経てリークするリーク電流を防止または低減することができる。また、回路パターン３ａ，３ｂと実装部２との間の電気絶縁性が向上するので、これらの間に、電気絶縁層を形成する必要がない。 In addition, since the mounting portion 2 made of a high heat dissipation synthetic resin has a specific resistance of 10 2 to 10 13 Ω · cm and a high resistance, that is, an electrical insulation property, the current supplied to the light emitting diode 7 is one side. The leakage current that leaks from the circuit pattern 3a to the other circuit pattern 3b through the upper surface of the mounting portion 2 between them can be prevented or reduced. In addition, since the electrical insulation between the circuit patterns 3a and 3b and the mounting portion 2 is improved, it is not necessary to form an electrical insulation layer between them.

さらに、高放熱性合成樹脂はその合成樹脂基材に含有させる無機フィラーの含有量を調整することにより、高放熱性合成樹脂の放熱性を適宜値に容易に調整することができる。   Furthermore, by adjusting the content of the inorganic filler contained in the synthetic resin base material of the high heat dissipation synthetic resin, the heat dissipation performance of the high heat dissipation synthetic resin can be easily adjusted to an appropriate value.

そして、実装部２は、嵌合凸部１０ａ，１０ｂを凹部形成部４の一対の嵌合凹部６ａ，６ｂ内に押し込み嵌合させることにより、実装部２と凹部形成部４とを簡単迅速に一体的に結合させることができる。   And the mounting part 2 pushes the fitting convex part 10a, 10b in a pair of fitting recessed part 6a, 6b of the recessed part formation part 4, and is made to fit the mounting part 2 and the recessed part formation part 4 easily and rapidly. They can be joined together.

しかも、図３に示すように一対の嵌合凸部１０ａ，１０ｂは、その上端突出方向延長線α，αが凹部５の中心Ｏに対して投光開口５ａの反射面である傾斜面よりも外側に位置している。このために、仮に延長線α，αが投光開口５ａの反射傾斜面上にある場合、その傾斜面内側の嵌合凹部６ａ，６ｂの肉厚が薄くなるので、この嵌合凹部６ａ，６ｂが嵌合凸部１０ａ，１０ｂと嵌合したときに、この反射傾斜面が歪むという不都合を低減できる。このために、この反射傾斜面の歪みによる光の乱反射を低減できる。   In addition, as shown in FIG. 3, the pair of fitting protrusions 10 a and 10 b have their upper end protruding direction extension lines α and α more than the inclined surfaces that are the reflection surfaces of the light projection opening 5 a with respect to the center O of the recess 5. Located on the outside. For this reason, if the extension lines α and α are on the reflection inclined surface of the projection opening 5a, the thickness of the fitting recesses 6a and 6b on the inner side of the inclined surface is reduced. When the fitting projections 10a and 10b are fitted, this inconvenience that the reflection inclined surface is distorted can be reduced. For this reason, irregular reflection of light due to the distortion of the reflection inclined surface can be reduced.

そして、この発光ダイオード装置１によれば、凹部５内に、発光ダイオードチップ７と蛍光体層９を配設する凹部形成部４を、反射率が９０％以上の樹脂により形成しているので、凹部５内に反射層を別途形成しない場合でも、凹部５の内面を高反射面に形成することができる。このために、発光ダイオードチップ７および蛍光体層９から凹部５内面に照射されて投光開口側５ａへ反射される反射光量を増加させることができる。このために、投光開口５ａから外部へ出力される出力光を向上させることができる。   And according to this light emitting diode device 1, since the concave portion forming portion 4 in which the light emitting diode chip 7 and the phosphor layer 9 are disposed in the concave portion 5 is formed of a resin having a reflectance of 90% or more. Even when a reflective layer is not separately formed in the recess 5, the inner surface of the recess 5 can be formed as a highly reflective surface. For this reason, it is possible to increase the amount of reflected light that is irradiated from the light emitting diode chip 7 and the phosphor layer 9 to the inner surface of the recess 5 and reflected to the projection opening side 5a. For this reason, the output light output to the exterior from the light projection opening 5a can be improved.

また、凹部形成部４の樹脂が１．０〜９．０［Ｗ／ｍ・Ｋ］の加工性に優れた熱可塑性高放熱樹性脂により形成されているので、凹部形成部４を射出成型等により容易かつ高精度に形成することができる。   Moreover, since the resin of the recessed part formation part 4 is formed with the thermoplastic high thermal radiation resin excellent in the workability of 1.0-9.0 [W / m * K], the recessed part formation part 4 is injection-molded. It can be formed easily and with high accuracy.

さらに、凹部形成部４の樹脂が高放熱樹脂製であるので、発光ダイオードチップ７や導電層であるリードフレーム３の発熱の放熱性を向上させることができる。   Furthermore, since the resin of the recess forming portion 4 is made of a high heat dissipation resin, the heat dissipation of the heat generation of the light emitting diode chip 7 and the lead frame 3 which is a conductive layer can be improved.

したがって、発光ダイオード装置１によれば、発光ダイオードチップ７と導電層のリードフレーム３の発熱を、高放熱性の凹部形成部４と実装部２とにより、２重に放熱するので、放熱性を大幅に向上させることができる。   Therefore, according to the light emitting diode device 1, the heat generated by the light emitting diode chip 7 and the lead frame 3 of the conductive layer is radiated twice by the highly heat radiating recess forming portion 4 and the mounting portion 2. It can be greatly improved.

また、実装部２は、その樹脂基材が加工性に優れた高放熱性の熱可塑性樹脂でもよく、その場合は実装部２を射出成型等により容易かつ高精度に形成することができる。   Further, the mounting portion 2 may be a highly heat-dissipating thermoplastic resin whose resin base material is excellent in workability, and in that case, the mounting portion 2 can be easily and highly accurately formed by injection molding or the like.

そして、凹部形成部４と実装部２は、これらの嵌合凹部６ａ，６ｂと嵌合凸部１０ａ，１０ｂとの嵌合により、簡単迅速に一体に結合させることができる。このために、発光ダイオード装置１の製造効率を向上させることができる。   And the recessed part formation part 4 and the mounting part 2 can be integrally combined simply and rapidly by fitting with these fitting recessed parts 6a and 6b and the fitting convex parts 10a and 10b. For this reason, the manufacturing efficiency of the light emitting diode device 1 can be improved.

図４は本発明の第２の実施形態に係る発光ダイオード装置１Ａの上記発光ダイオードチップ７とボンディングワイヤ８を図示省略したの要部平面図、図５は同縦断面図である。   FIG. 4 is a plan view of an essential part of the light emitting diode device 1A according to the second embodiment of the present invention, with the light emitting diode chip 7 and the bonding wire 8 omitted, and FIG.

この発光ダイオード装置１Ａは、図１〜図３で示す凹部形成部４に、その凹部４の底部５を上記高い放熱性と高い反射率を具備した熱可塑性樹脂により一体に形成し、この底部１１に、発光ダイオードチップ７を挿通させるチップ挿通孔７ａと、発光ダイオードチップ７のボンディングワイヤ８を挿通させるワイヤ挿通孔８ａを開口させた点に特徴がある。   In this light emitting diode device 1A, the bottom portion 5 of the concave portion 4 is formed integrally with the concave portion forming portion 4 shown in FIGS. 1 to 3 by the thermoplastic resin having the above high heat dissipation and high reflectance, and this bottom portion 11 is formed. Further, there is a feature in that a chip insertion hole 7a for inserting the light emitting diode chip 7 and a wire insertion hole 8a for inserting the bonding wire 8 of the light emitting diode chip 7 are opened.

すなわち、この凹部形成部４によれば、発光ダイオードチップ７を一方の回路パターン、例えば３ａに実装した状態で凹部底部１１のチップ挿通孔７ａに、この発光ダイオードチップ７を挿通させ、そのボンディングワイヤ８を底部１１のワイヤ挿通孔８ａに挿通させて固着させる。これにより、この底部１１上面を反射面に形成することができる。   That is, according to the concave portion forming portion 4, the light emitting diode chip 7 is inserted into the chip insertion hole 7a of the concave portion bottom portion 11 in a state where the light emitting diode chip 7 is mounted on one circuit pattern, for example, 3a. 8 is inserted into the wire insertion hole 8a of the bottom 11 and fixed. Thereby, the upper surface of this bottom part 11 can be formed in a reflective surface.

したがって、この凹部形成部４によれば、高反射性樹脂により、凹部５とその底部１１とを一体に形成しているので、この凹部５の底部１１の反射率を向上させることができる。   Therefore, according to the concave portion forming portion 4, the concave portion 5 and the bottom portion 11 thereof are integrally formed of a highly reflective resin, so that the reflectance of the bottom portion 11 of the concave portion 5 can be improved.

このために、凹部５の底部１１上に位置する発光ダイオードチップ７や蛍光体層９、凹部５内面から当該底部１１に入射される光の反射効率を向上させることができる。   For this reason, it is possible to improve the reflection efficiency of light incident on the bottom 11 from the inner surface of the light emitting diode chip 7 and the phosphor layer 9 and the recess 5 located on the bottom 11 of the recess 5.

このために、凹部５の底部１１に対向する投光開口５ａから出力される出力光を向上させることができる。   For this reason, the output light output from the light projection opening 5a which opposes the bottom part 11 of the recessed part 5 can be improved.

なお、上記ワイヤ挿通孔８ａはボンディングワイヤ８の本数に対応させて２つ形成してもよい。また、上記凹部形成部４と、実装部２とを例えば射出成型等により一体に形成してもよい。   Two wire insertion holes 8a may be formed corresponding to the number of bonding wires 8. Moreover, you may form the said recessed part formation part 4 and the mounting part 2 integrally by injection molding etc., for example.

すなわち、まず、熱可塑性の高熱伝導性樹脂により、導電層のリードフレーム３を一体に組み付けた実装部２を射出成型により形成する。   That is, first, the mounting portion 2 in which the lead frame 3 of the conductive layer is integrally assembled is formed by injection molding using a thermoplastic high thermal conductive resin.

次に、この実装部２上に、上記熱可塑性の高反射樹脂を使用して凹部形成部４を射出成型することにより、実装部２上に凹部形成部４をそれぞれ一体に形成する。   Next, the recess forming portion 4 is integrally formed on the mounting portion 2 by injection molding the recess forming portion 4 on the mounting portion 2 using the thermoplastic highly reflective resin.

これによれば、実装部２上において、凹部形成部４を射出成型することにより、この凹部形成部４を実装部２に溶着して一体に結合させることができるので、これら実装部２の嵌合凸部１０ａ，１０ｂと、凹部形成部４の嵌合凹部６ａ，６ｂとを省略することができ、構成の一層の簡素化を図ることができる。また、実装部２と凹部形成部４との一体結合が熱可塑性樹脂による溶着であるので、その結合力を強化することができる。さらに、この場合、実装部２と凹部形成部４の成型順は逆でもよい。すなわち、凹部形成部４を射出成型により形成した後、実装部２を射出成型し、その際に、凹部形成部４を実装部２に溶着させてもよい。   According to this, since the recess forming part 4 can be welded to the mounting part 2 and integrally coupled to the mounting part 2 by injection molding of the recess forming part 4 on the mounting part 2, The joint convex portions 10a and 10b and the fitting concave portions 6a and 6b of the concave portion forming portion 4 can be omitted, and the configuration can be further simplified. Moreover, since the integral coupling | bonding of the mounting part 2 and the recessed part formation part 4 is welding by a thermoplastic resin, the coupling force can be strengthened. Further, in this case, the molding order of the mounting portion 2 and the recess forming portion 4 may be reversed. That is, after forming the recess forming portion 4 by injection molding, the mounting portion 2 may be injection molded, and at this time, the recess forming portion 4 may be welded to the mounting portion 2.

また、上記実施形態では単数の発光ダイオード装置１について説明したが、本発明はこれに限定されるものではなく、例えば図６に示すように上記発光ダイオード装置１の複数個を一平面上に、例えば３行３列のマトリクス状等所要形状に配列し、一体に連成してもよい。この実施形態によれば、発光ダイオード装置１を複数個具備している分、発光面積を増大させることができる。   In the above embodiment, the single light emitting diode device 1 has been described. However, the present invention is not limited to this. For example, as shown in FIG. 6, a plurality of the light emitting diode devices 1 are arranged on one plane. For example, they may be arranged in a required shape such as a matrix of 3 rows and 3 columns and integrally formed. According to this embodiment, since the plurality of light emitting diode devices 1 are provided, the light emitting area can be increased.

さらに、上記各発光ダイオード装置１では、蛍光体層として黄色発光の黄色蛍光体層９に構成する場合について説明したが、本発明は、この蛍光体層の発光色に限定されるものではなく、他の色に発光する蛍光体層に構成してもよい。また、凹部５内に透明樹脂を充填して透明層に構成してもよく、蛍光体層を省略してもよい。さらに、上記実施形態では、凹部形成部４，４ａに嵌合凹部６ａ，６ｂを形成し、実装部２に嵌合凸部１０ａ，１０ｂを形成する場合について説明したが、その逆に、凹部形成部４，４ａに嵌合凸部１０ａ，１０ｂを形成し、実装部２に嵌合凹部６ａ，６ｂを形成してもよい。   Further, in each of the light emitting diode devices 1 described above, the case where the phosphor layer is configured as the yellow phosphor layer 9 that emits yellow light has been described, but the present invention is not limited to the emission color of the phosphor layer, You may comprise in the fluorescent substance layer which light-emits in another color. Further, the concave portion 5 may be filled with a transparent resin to constitute a transparent layer, or the phosphor layer may be omitted. Further, in the above embodiment, the case where the fitting recesses 6a and 6b are formed in the recess forming portions 4 and 4a and the fitting protrusions 10a and 10b are formed in the mounting portion 2 has been described. The fitting convex portions 10a and 10b may be formed on the portions 4 and 4a, and the fitting concave portions 6a and 6b may be formed on the mounting portion 2.

本発明の第１の実施形態に係る発光ダイオード装置の要部縦断面図。The principal part longitudinal cross-sectional view of the light emitting diode apparatus which concerns on the 1st Embodiment of this invention. 図１で示す発光ダイオード装置の発光ダイオードチップ、ボンディングワイヤ、蛍光体層を省略した状態の平面図。The top view of the state which abbreviate | omitted the light emitting diode chip | tip, bonding wire, and fluorescent substance layer of the light emitting diode apparatus shown in FIG. 図２のＩＩＩ−ＩＩＩ線断面図。III-III sectional view taken on the line of FIG. 本発明の第２の実施形態に係る要部平面図。The principal part top view which concerns on the 2nd Embodiment of this invention. 図４のＶ−Ｖ線断面図。VV sectional view taken on the line of FIG. 本発明の第３の実施形態に係る発光ダイオード装置の平面図。The top view of the light emitting diode apparatus which concerns on the 3rd Embodiment of this invention. 発光ダイオードチップの温度と相対的光強度との相対関係を示すグラフ。The graph which shows the relative relationship between the temperature of a light emitting diode chip | tip, and relative light intensity.

符号の説明Explanation of symbols

１…発光ダイオード装置、２…実装部、３ａ，３ｂ…回路パターン、４…凹部形成部、５…凹部、５ａ…投光開口、７…青色発光ダイオードチップ、７ａ…チップ挿通孔、８ａ…ワイヤ挿通孔、９…黄色蛍光体層。   DESCRIPTION OF SYMBOLS 1 ... Light emitting diode device, 2 ... Mounting part, 3a, 3b ... Circuit pattern, 4 ... Concave formation part, 5 ... Concave part, 5a ... Light emission opening, 7 ... Blue light emitting diode chip, 7a ... Chip insertion hole, 8a ... Wire Insertion hole, 9 ... yellow phosphor layer.

Claims (9)

熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部を形成してなる凹部形成部と；
凹部の投光開口に対向する内底面上に形成された導電層と；
凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；
無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部に接合された樹脂層と；
を具備していることを特徴とする発光ダイオード装置。 A recess forming portion formed by forming a recess having a light projection opening with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K];
A conductive layer formed on the inner bottom surface facing the projection opening of the recess;
A light emitting diode chip disposed in the recess and electrically connected to the conductive layer;
A resin layer formed of a resin having an inorganic filler and a thermal conductivity of 1.0 to 9.0 [W / m · K] and bonded to the recess forming portion;
A light-emitting diode device comprising: 熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部を形成してなる凹部形成部と；
凹部の投光開口に対向する内底面上に形成された導電層と；
凹部内に配設された蛍光体層と；
凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；
無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部に接合された樹脂層と；
を具備していることを特徴とする発光ダイオード装置。 A recess forming portion formed by forming a recess having a light projection opening with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K];
A conductive layer formed on the inner bottom surface facing the projection opening of the recess;
A phosphor layer disposed in the recess;
A light emitting diode chip disposed in the recess and electrically connected to the conductive layer;
A resin layer formed of a resin having an inorganic filler and a thermal conductivity of 1.0 to 9.0 [W / m · K] and bonded to the recess forming portion;
A light-emitting diode device comprising: 熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の熱可塑性樹脂により投光開口を有する凹部および嵌合部を形成してなる凹部形成部と；
凹部の投光開口に対向する内底面上に形成された導電層と；
凹部内に配設された蛍光体層と；
凹部内に配設されて導電層に電気的に接続された発光ダイオードチップと；
無機フィラーを含有した熱伝導率が１．０〜９．０［Ｗ／ｍ・Ｋ］の樹脂により形成され、前記凹部形成部の嵌合部に嵌合された被嵌合部を有する樹脂層と；
を具備していることを特徴とする発光ダイオード装置。 A recess forming portion formed by forming a recess having a projection opening and a fitting portion with a thermoplastic resin having a thermal conductivity of 1.0 to 9.0 [W / m · K];
A conductive layer formed on the inner bottom surface facing the projection opening of the recess;
A phosphor layer disposed in the recess;
A light emitting diode chip disposed in the recess and electrically connected to the conductive layer;
A resin layer having a fitting portion formed of a resin having an inorganic filler and a thermal conductivity of 1.0 to 9.0 [W / m · K] and fitted to the fitting portion of the recess forming portion. When;
A light-emitting diode device comprising: 凹部形成部は、合成樹脂製基材に、無機フィラーを５０〜９０質量％含有してなることを特徴とする請求項１ないし３のいずれか一記載の発光ダイオード装置。 The light-emitting diode device according to any one of claims 1 to 3, wherein the recessed portion forming portion contains 50 to 90 mass% of an inorganic filler in a synthetic resin base material. 無機フィラーは、直径が１００μｍ以下の球形であることを特徴とする請求項４記載の発光ダイオード装置。 The light emitting diode device according to claim 4, wherein the inorganic filler has a spherical shape with a diameter of 100 μm or less. 前記凹部形成部は、反射率が９０％以上の樹脂により形成されていることを特徴とする請求項１ないし５のいずれか一記載の発光ダイオード装置。 The light emitting diode device according to claim 1, wherein the recess forming portion is made of a resin having a reflectance of 90% or more. 前記凹部形成部は、凹部に一体に形成された底部を有し、この底部には、前記発光ダイオードチップおよびそのボンディングワイヤを挿通させる挿通孔をそれぞれ形成していることを特徴とする請求項１ないし６のいずれか一記載の発光ダイオード装置。 2. The recessed portion forming portion has a bottom portion formed integrally with the recessed portion, and an insertion hole through which the light emitting diode chip and its bonding wire are inserted is formed in the bottom portion, respectively. 7. The light emitting diode device according to any one of items 6 to 6. 樹脂層は、その樹脂基材が熱可塑性樹脂であり、この樹脂層の射出成型時に、この樹脂層に凹部形成部を溶着させることにより接合されていることを特徴とする請求項１ないし７のいずれか一記載の発光ダイオード装置。 8. The resin layer according to claim 1, wherein the resin base material is a thermoplastic resin, and the resin layer is joined by welding a recess forming portion to the resin layer at the time of injection molding of the resin layer. The light emitting diode device according to any one of the above. 樹脂層の比抵抗が１０２〜１０１３Ω・ｃｍであることを特徴とする請求項１ないし８のいずれか一記載の発光ダイオード装置。 9. The light emitting diode device according to claim 1, wherein the specific resistance of the resin layer is 10 < 2 > to 10 < 13 > [Omega] .cm.
JP2006198088A 2005-07-22 2006-07-20 Light-emitting diode device Pending JP2007201405A (en)

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