JP5352537B2 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JP5352537B2
JP5352537B2 JP2010147918A JP2010147918A JP5352537B2 JP 5352537 B2 JP5352537 B2 JP 5352537B2 JP 2010147918 A JP2010147918 A JP 2010147918A JP 2010147918 A JP2010147918 A JP 2010147918A JP 5352537 B2 JP5352537 B2 JP 5352537B2
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JP
Japan
Prior art keywords
target
electrode
magnetron
substrate
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010147918A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012012633A (ja
Inventor
敏明 楠
竜也 三宅
健一 山本
武司 玉腰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010147918A priority Critical patent/JP5352537B2/ja
Priority to TW100122194A priority patent/TW201215249A/zh
Priority to KR1020110062792A priority patent/KR101269738B1/ko
Priority to CN2011101777150A priority patent/CN102312207B/zh
Publication of JP2012012633A publication Critical patent/JP2012012633A/ja
Application granted granted Critical
Publication of JP5352537B2 publication Critical patent/JP5352537B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2010147918A 2010-06-29 2010-06-29 成膜装置 Expired - Fee Related JP5352537B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010147918A JP5352537B2 (ja) 2010-06-29 2010-06-29 成膜装置
TW100122194A TW201215249A (en) 2010-06-29 2011-06-24 Film forming device
KR1020110062792A KR101269738B1 (ko) 2010-06-29 2011-06-28 성막 장치
CN2011101777150A CN102312207B (zh) 2010-06-29 2011-06-29 成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010147918A JP5352537B2 (ja) 2010-06-29 2010-06-29 成膜装置

Publications (2)

Publication Number Publication Date
JP2012012633A JP2012012633A (ja) 2012-01-19
JP5352537B2 true JP5352537B2 (ja) 2013-11-27

Family

ID=45425764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010147918A Expired - Fee Related JP5352537B2 (ja) 2010-06-29 2010-06-29 成膜装置

Country Status (4)

Country Link
JP (1) JP5352537B2 (zh)
KR (1) KR101269738B1 (zh)
CN (1) CN102312207B (zh)
TW (1) TW201215249A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6672595B2 (ja) * 2015-03-17 2020-03-25 凸版印刷株式会社 成膜装置
JP2018147813A (ja) 2017-03-08 2018-09-20 株式会社ジャパンディスプレイ 表示装置の製造方法及び表示装置
JP6970624B2 (ja) * 2018-02-13 2021-11-24 東京エレクトロン株式会社 成膜システム及び基板上に膜を形成する方法
JP7215305B2 (ja) * 2019-04-04 2023-01-31 日本電産株式会社 プラズマ処理装置用の治具、および、プラズマ処理システム
CN111863284B (zh) * 2020-06-24 2022-03-25 中国工程物理研究院激光聚变研究中心 深冷靶低温吸附抑制开启机构
CN113088918B (zh) * 2021-04-19 2022-11-25 辽宁分子流科技有限公司 一种智能蒸发镀膜机

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05287519A (ja) * 1992-04-10 1993-11-02 Fujitsu Ltd スパッタ装置
JPH06322534A (ja) * 1993-05-07 1994-11-22 Sharp Corp 薄膜形成方法及び薄膜形成装置
JPH07310181A (ja) * 1994-05-13 1995-11-28 Hitachi Ltd 直流マグネトロンスパッタ方法及び装置
JPH08165569A (ja) * 1994-12-12 1996-06-25 Chugai Ro Co Ltd 反応性マグネトロンスパッタリング成膜装置
JP2000192239A (ja) * 1998-12-22 2000-07-11 Matsushita Electric Ind Co Ltd スパッタリング方法およびスパッタリング装置
JP2003303681A (ja) * 2002-04-09 2003-10-24 Sharp Corp 有機ｌｅｄ素子およびその製造方法、有機ｌｅｄ表示装置
JP4635570B2 (ja) * 2004-11-08 2011-02-23 凸版印刷株式会社 有機エレクトロルミネッセンス素子の製造方法および製造装置
JP2007095338A (ja) * 2005-09-27 2007-04-12 Toppan Printing Co Ltd 有機電界発光素子及びその製造方法
JP2008214687A (ja) 2007-03-02 2008-09-18 Toppan Printing Co Ltd 成膜方法、スパッタリング装置、スパッタリングターゲットおよび有機電界発光装置の製造方法
JP5002532B2 (ja) * 2008-05-27 2012-08-15 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP5287519B2 (ja) * 2009-06-03 2013-09-11 株式会社ジェイテクト 摺動式トリポード型等速ジョイント

Also Published As

Publication number Publication date
KR20120001654A (ko) 2012-01-04
KR101269738B1 (ko) 2013-05-30
CN102312207B (zh) 2013-10-23
CN102312207A (zh) 2012-01-11
TW201215249A (en) 2012-04-01
JP2012012633A (ja) 2012-01-19

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