JP5352045B2 - 集積回路装置の作製方法 - Google Patents

集積回路装置の作製方法 Download PDF

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Publication number
JP5352045B2
JP5352045B2 JP2006153016A JP2006153016A JP5352045B2 JP 5352045 B2 JP5352045 B2 JP 5352045B2 JP 2006153016 A JP2006153016 A JP 2006153016A JP 2006153016 A JP2006153016 A JP 2006153016A JP 5352045 B2 JP5352045 B2 JP 5352045B2
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Japan
Prior art keywords
substrate
layer
dlc
film
adhesive
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Expired - Fee Related
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JP2006153016A
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English (en)
Japanese (ja)
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JP2007013131A5 (enrdf_load_stackoverflow
JP2007013131A (ja
Inventor
浩二 大力
直人 楠本
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006153016A priority Critical patent/JP5352045B2/ja
Publication of JP2007013131A publication Critical patent/JP2007013131A/ja
Publication of JP2007013131A5 publication Critical patent/JP2007013131A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006153016A 2005-06-03 2006-06-01 集積回路装置の作製方法 Expired - Fee Related JP5352045B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005164605 2005-06-03
JP2005164605 2005-06-03
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007013131A JP2007013131A (ja) 2007-01-18
JP2007013131A5 JP2007013131A5 (enrdf_load_stackoverflow) 2009-07-09
JP5352045B2 true JP5352045B2 (ja) 2013-11-27

Family

ID=37751159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006153016A Expired - Fee Related JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

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JP (1) JP5352045B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2699552C (en) * 2007-09-14 2013-05-28 Junsuke Tanaka Antenna sheet, transponder, and booklet
US8685837B2 (en) 2010-02-04 2014-04-01 Sharp Kabushiki Kaisha Transfer method, method for manufacturing semiconductor device, and semiconductor device
TWI506770B (zh) * 2010-07-02 2015-11-01 Himax Imagimg Inc 影像感測器與其製造方法
WO2012046428A1 (ja) * 2010-10-08 2012-04-12 シャープ株式会社 半導体装置の製造方法
JP6517678B2 (ja) * 2015-12-11 2019-05-22 株式会社Screenホールディングス 電子デバイスの製造方法
JP6561966B2 (ja) * 2016-11-01 2019-08-21 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04349621A (ja) * 1991-05-27 1992-12-04 Canon Inc 半導体基材の作製方法
JP4531923B2 (ja) * 2000-04-25 2010-08-25 株式会社半導体エネルギー研究所 半導体装置
JP5121103B2 (ja) * 2000-09-14 2013-01-16 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法及び電気器具
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
JP3979074B2 (ja) * 2001-12-11 2007-09-19 株式会社豊田自動織機 有機エレクトロルミネッセンス素子及びその製造方法
US20040140469A1 (en) * 2003-01-17 2004-07-22 Tsung-Neng Liao Panel of a flat display and method of fabricating the panel
JP2005045053A (ja) * 2003-07-23 2005-02-17 Elpida Memory Inc 半導体装置の製造方法

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Publication number Publication date
JP2007013131A (ja) 2007-01-18

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