JP5351624B2 - LED module - Google Patents

LED module Download PDF

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JP5351624B2
JP5351624B2 JP2009139549A JP2009139549A JP5351624B2 JP 5351624 B2 JP5351624 B2 JP 5351624B2 JP 2009139549 A JP2009139549 A JP 2009139549A JP 2009139549 A JP2009139549 A JP 2009139549A JP 5351624 B2 JP5351624 B2 JP 5351624B2
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light
substrate
emitting device
led chip
detection element
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JP2010287685A (en
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威 中筋
佳治 佐名川
孝昌 酒井
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED module whose cost is reduced by simplifying the structure of a light-emitting device equipped with an optical detecting element that detects part of light emitted from an LED chip, and which suppresses a rise in the temperature of the LED chip. <P>SOLUTION: Respective electrodes 12a, 12b of the LED chip 1 on the light-emitting device 10 and respective electrodes (not shown) of the optical detecting element 4, and conductor patterns 73a, 73b, 73c, and 73d on a metal base printed wiring board 70 which are made to correspond to the electrodes of the LED chip and the electrodes of the optical detecting element 4 are electrically connected via at least bonding wires 14, 14, 14, and 14, and a cut part 63 where the respective bonding wires 14 pass is formed at a wall part 62 on one surface side of a base substrate part 61 of a three-dimensional structure 6 of the light-emitting device 10. The entire other surface of the base substrate part 61 is bonded to a metal base printed wiring board 70. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を用いた発光装置を備えたＬＥＤモジュールに関するものである。   The present invention relates to an LED module including a light emitting device using an LED chip (light emitting diode chip).

近年、ＬＥＤチップおよび当該ＬＥＤチップから放射される光の一部を検出する光検出素子を有する発光装置が提案されており（例えば、特許文献１参照）、上記特許文献１には、この種の発光装置を回路基板に実装したＬＥＤモジュールも提案されている。   In recent years, a light-emitting device having an LED chip and a light-detecting element that detects part of light emitted from the LED chip has been proposed (see, for example, Patent Document 1). An LED module in which a light emitting device is mounted on a circuit board has also been proposed.

ここで、この種のＬＥＤモジュールは、例えば、図４に示すように、発光装置１０’と、発光装置１０’が実装された回路基板である金属ベースプリント配線板７０’とを備えている。   Here, for example, as shown in FIG. 4, this type of LED module includes a light emitting device 10 ′ and a metal base printed wiring board 70 ′ that is a circuit board on which the light emitting device 10 ′ is mounted.

上述の発光装置１０’は、ＬＥＤチップ１と、ＬＥＤチップ１が実装される実装基板２’とを備え、実装基板２’に、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４が形成されている。   The above-described light emitting device 10 ′ includes an LED chip 1 and a mounting substrate 2 ′ on which the LED chip 1 is mounted, and light detection for detecting a part of light emitted from the LED chip 1 on the mounting substrate 2 ′. Element 4 is formed.

ここにおいて、実装基板２’は、第１のシリコン基板２０ａ’を用いて形成されＬＥＤチップ１が一表面側に実装されるベース基板２０’と、第２のシリコン基板３０ａ’を用いて形成されＬＥＤチップ１から放射される光を出射するための第１の開口窓３１’が形成されベース基板２０’の上記一表面側に接合された配光用基板３０’と、第３のシリコン基板４０ａ’を用いて形成されＬＥＤチップ１から放射される光を出射するための第２の開口窓４１’が形成されるとともに光検出素子４が形成された光検出素子形成基板４０’とで構成されている。要するに、実装基板２’は、３枚のシリコン基板（半導体基板）２０’，３０’，４０’を用いて形成されている。なお、この発光装置１０’では、実装基板２’が、ＬＥＤチップ１を収納するパッケージを構成している。また、この発光装置１０’では、ベース基板２０’が、ＬＥＤチップ１が搭載されるベース基板部を構成し、配光用基板３０’と光検出素子形成基板４０’との積層体が、ベース基板部から突設されＬＥＤチップを囲む壁部を構成している。   Here, the mounting substrate 2 ′ is formed using the first silicon substrate 20a ′ and the base substrate 20 ′ on which the LED chip 1 is mounted on one surface side, and the second silicon substrate 30a ′. A light distribution substrate 30 ′ formed with a first opening window 31 ′ for emitting light emitted from the LED chip 1 and bonded to the one surface side of the base substrate 20 ′, and a third silicon substrate 40a And a light detection element forming substrate 40 ′ in which a second opening window 41 ′ for emitting light emitted from the LED chip 1 is formed and the light detection element 4 is formed. ing. In short, the mounting substrate 2 ′ is formed using three silicon substrates (semiconductor substrates) 20 ′, 30 ′, and 40 ′. In the light emitting device 10 ′, the mounting substrate 2 ′ constitutes a package that houses the LED chip 1. Further, in this light emitting device 10 ′, the base substrate 20 ′ constitutes a base substrate portion on which the LED chip 1 is mounted, and a laminated body of the light distribution substrate 30 ′ and the light detection element forming substrate 40 ′ is formed as a base. A wall portion protruding from the substrate portion and surrounding the LED chip is configured.

上述のベース基板２０’は、図４〜図６に示すように、上記一表面側に、ＬＥＤチップ１をダイボンドするダイパッド部２５ｂａ’が形成され、他表面側に、ＬＥＤチップ１の各電極（図示せず）および光検出素子４の各電極４７ｃ，４７ｄそれぞれに当該ベース基板２０’の厚み方向に沿って設けた貫通孔配線２４を介して電気的に接続される４つの外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄが形成され、配光用基板３０’は、光検出素子４の各電極４７ｃ，４７ｄとベース基板２０’において光検出素子４に対応付けられた２つの貫通孔配線２４とをそれぞれ電気的に接続する２つの貫通孔配線３４が形成されている。   As shown in FIGS. 4 to 6, the base substrate 20 ′ has a die pad portion 25ba ′ for die-bonding the LED chip 1 on the one surface side, and each electrode ( And four external connection electrodes 27a electrically connected to the electrodes 47c and 47d of the light detection element 4 through the through-hole wiring 24 provided along the thickness direction of the base substrate 20 '. 27b, 27c, and 27d, and the light distribution substrate 30 ′ includes the electrodes 47c and 47d of the light detection element 4 and the two through-hole wirings 24 associated with the light detection element 4 in the base substrate 20 ′. Two through-hole wirings 34 are formed to electrically connect the two.

また、ベース基板２０’は、上記一表面側に、ダイパッド部２５ｂａ’と連続一体に形成されＬＥＤチップ１におけるベース基板２０’側の一方の電極に対応付けられた貫通孔配線２４が電気的に接続される引出配線部２５ｂｂ’と、ＬＥＤチップ１におけるベース基板２０’側とは反対側に設けられた他方の電極に一端部が接合されるボンディングワイヤ１４’の他端部が接合されるパッド２５ａ’とが形成されており、当該パッド２５ａ’とＬＥＤチップ１の上記他方の電極に対応付けられた貫通孔配線２４とが電気的に接続されている。なお、ベース基板２０’は、ダイパッド部２５ｂａ’直下に、複数のサーマルビア２６が設けられ、上記他表面側におけるダイパッド部２５ｂａ’の投影領域に、各サーマルビア２６に熱的に結合された放熱用パッド部２８が形成されている。なお、発光装置１０’は、各外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、サーマルビア２６、放熱用パッド部２８が、第１のシリコン基板２０ａ’に形成された絶縁膜２３によって電気的に絶縁されている。   Further, the base substrate 20 ′ is electrically formed with a through-hole wiring 24 formed integrally with the die pad portion 25ba ′ on the one surface side and associated with one electrode on the base substrate 20 ′ side of the LED chip 1. A lead wire portion 25bb ′ to be connected and a pad to which the other end portion of the bonding wire 14 ′ is bonded to the other electrode provided on the opposite side of the LED chip 1 from the base substrate 20 ′ side. 25a ′ is formed, and the pad 25a ′ and the through-hole wiring 24 associated with the other electrode of the LED chip 1 are electrically connected. The base substrate 20 ′ is provided with a plurality of thermal vias 26 immediately below the die pad portion 25ba ′, and heat radiation thermally coupled to each thermal via 26 in the projection region of the die pad portion 25ba ′ on the other surface side. A pad portion 28 is formed. In the light emitting device 10 ′, the external connection electrodes 27a, 27b, 27c, and 27d, the thermal via 26, and the heat radiation pad portion 28 are electrically connected by the insulating film 23 formed on the first silicon substrate 20a ′. Insulated.

上述の発光装置１０’は、実装基板２’により構成されるパッケージの内部空間がＬＥＤチップ１およびボンディングワイヤ１４’を封止する透光性材料（例えば、シリコーン樹脂など）からなる封止部５により充実されている。   In the light emitting device 10 'described above, the inner space of the package constituted by the mounting substrate 2' has a sealing portion 5 made of a translucent material (for example, silicone resin) that seals the LED chip 1 and the bonding wire 14 '. It is enriched by.

光検出素子形成基板４０’は、第２の開口窓４１’の開口面積が、配光用基板３０’における光検出素子形成基板４０’側の表面での第１の開口窓３１’の開口面積よりも小さく設定されており、第２の開口窓４１’の周部に光検出素子４の受光部４ａが形成されている。   In the light detection element formation substrate 40 ′, the opening area of the second opening window 41 ′ is such that the opening area of the first opening window 31 ′ on the surface of the light distribution substrate 30 ′ on the light detection element formation substrate 40 ′ side. The light receiving portion 4a of the light detecting element 4 is formed around the second opening window 41 ′.

また、上述の発光装置１０’は、光検出素子形成基板４０’における配光用基板３０’側とは反対側に、第２の開口窓４１’を閉塞する透光性部材３’が固着されている。   Further, in the light emitting device 10 ′ described above, a translucent member 3 ′ that closes the second opening window 41 ′ is fixed to the side opposite to the light distribution substrate 30 ′ side of the light detection element formation substrate 40 ′. ing.

また、金属ベースプリント配線板７０’は、Ｃｕ製の金属板７１上に絶縁層７２が形成され、絶縁層７２上に、発光装置１０’のＬＥＤチップ１に電気的に接続された２つの外部接続用電極２７ａ，２７ｂそれぞれが半田からなる接合部（図示せず）を介して接合されて電気的に接続される導体パターン（図示せず）と、光検出素子４の各電極４７ｃ，４７ｄに電気的に接続された２つの外部接続用電極２７ｃ，２７ｄそれぞれが半田からなる接合部８３ｃ，８３ｄを介して接合されて電気的に接続される導体パターン７３ｃ，７３ｄと、発光装置１０’の放熱用パッド部２８が半田からなる接合部８４を介して接合されて熱結合される導体パターン７４とが形成されている。しかして、図４に示した構成のＬＥＤモジュールでは、発光装置１０’のＬＥＤチップ１で発生した熱をサーマルビア２６、放熱用パッド部２８および接合部８４を通して金属ベースプリント配線板７０’へ伝熱させることが可能となり、ＬＥＤチップ１の温度上昇を抑制することができる。   Further, the metal-based printed wiring board 70 ′ has an insulating layer 72 formed on a Cu metal plate 71, and two external parts electrically connected to the LED chip 1 of the light emitting device 10 ′ on the insulating layer 72. The connection electrodes 27a and 27b are joined to each other through a joint portion (not shown) made of solder and electrically connected, and the electrodes 47c and 47d of the light detecting element 4 are electrically connected. Two electrically connected electrodes for external connection 27c, 27d are joined via solder joints 83c, 83d and electrically connected to conductor patterns 73c, 73d, and heat radiation of the light emitting device 10 '. A conductive pattern 74 is formed, in which the pad portion 28 is bonded via a bonding portion 84 made of solder and thermally coupled. 4, the heat generated in the LED chip 1 of the light emitting device 10 ′ is transmitted to the metal base printed wiring board 70 ′ through the thermal via 26, the heat dissipation pad 28 and the joint 84. It becomes possible to heat, and the temperature rise of the LED chip 1 can be suppressed.

特開２００７−２９４８３４号公報JP 2007-294834 A

ところで、図４に示した構成のＬＥＤモジュールでは、発光装置１０’における実装基板２’の基礎となる３枚のシリコン基板２０ａ’，３０ａ’，４０ａ’のうち２枚のシリコン基板２０ａ’，３０ａ’それぞれに貫通孔配線２４，３４を形成する必要があるとともに当該２枚のシリコン基板２０ａ’，３０ａ’のうちの１枚のシリコン基板２０ａ’にサーマルビア２６を形成する必要があり、構造が複雑になってしまうとともに製造プロセスが複雑になりコストが高くなってしまう。   By the way, in the LED module having the configuration shown in FIG. 4, two silicon substrates 20a ′, 30a among the three silicon substrates 20a ′, 30a ′, 40a ′ serving as the basis of the mounting substrate 2 ′ in the light emitting device 10 ′. 'It is necessary to form through-hole wirings 24 and 34 for each of them, and it is necessary to form the thermal via 26 on one silicon substrate 20a' of the two silicon substrates 20a 'and 30a'. It becomes complicated and the manufacturing process becomes complicated and the cost becomes high.

本発明は上記事由に鑑みて為されたものであり、その目的は、ＬＥＤチップから放射される光の一部を検出する光検出素子を備えた発光装置の構造の簡略化による低コスト化を図れ、且つ、ＬＥＤチップの温度上昇を抑制できるＬＥＤモジュールを提供することにある。   The present invention has been made in view of the above reasons, and its object is to reduce the cost by simplifying the structure of a light-emitting device including a light-detecting element that detects part of light emitted from an LED chip. An object of the present invention is to provide an LED module that can suppress the temperature rise of the LED chip.

請求項１の発明は、ＬＥＤチップおよび当該ＬＥＤチップから放射される光の一部を検出する光検出素子を有する発光装置と、前記発光装置が実装された金属ベースプリント配線板とを備え、前記発光装置は、前記ＬＥＤチップが一表面側に搭載されるベース基板部と、当該ベース基板部から突設され前記ＬＥＤチップを囲むとともに前記光検出素子が形成された壁部とを有する３次元構造体が、前記ベース基板部と第１の開口窓が形成された配光用基板と第２の開口窓が形成された光検出素子形成基板とで構成され、前記配光用基板と前記光検出素子形成基板とで前記壁部が構成され、前記配光用基板は、前記第１の開口窓の開口面積が前記ベース基板部から離れるにつれて徐々に大きくなっており、前記ＬＥＤチップから放射された光を前方へ反射するミラーを構成しており、前記光検出素子形成基板は、前記光検出素子の受光部、各電極が前記ベース基板部との対向面側に設けられており、前記金属ベースプリント配線板は、前記発光装置の前記ベース基板部の他表面が接合される接合領域の周囲に、前記発光装置の前記ＬＥＤチップの各電極および前記光検出素子の各電極それぞれに対応付けられた複数の導体パターンを有し、前記発光装置と前記金属ベースプリント配線板とは、前記ＬＥＤチップの各電極および前記光検出素子の各電極それぞれと前記金属ベースプリント配線板の対応付けられた導体パターンとが少なくともボンディングワイヤを介して電気的に接続されてなり、前記発光装置の壁部には、ボンディングワイヤを通す切欠部が形成されてなり、前記配光用基板は、前記ベース基板部側とは反対の表面側に前記光検出素子の各電極それぞれと電気的に接続される導体パターンが形成され、前記第１の開口窓に連通する切欠部が形成されており、前記光検出素子形成基板は、前記第２の開口窓に連通する切欠部が形成されており、前記発光装置は、前記配光用基板の前記導体パターンそれぞれの一部が、前記光検出素子形成基板の前記切欠部を通して前記ボンディングワイヤが接続されるパッドを構成していることを特徴とする。 The invention of claim 1 includes a light emitting device having a light detecting element for detecting a portion of the light emitted from the LED chip and the LED chip, a metal base printed wiring board in which the light - emitting device is mounted, the light - emitting device, the L ED chip and the base substrate portion is mounted on one surface, the base substrate portion protruding from the L ED the light detection element to together enclose a tip is formed wall A three-dimensional structure having a base portion, a light distribution substrate on which a first opening window is formed, and a light detection element forming substrate on which a second opening window is formed. The wall portion is constituted by the light substrate and the light detection element formation substrate, and the light distribution substrate is gradually increased as the opening area of the first opening window is separated from the base substrate portion, Light emitted from the LED chip Constitutes a mirror for reflecting forward the light detection element forming substrate, the light receiving portion of the light detection element, and each electrode is provided on a surface facing said base substrate, said metals based print wiring board, around the junction region other surface of said base over scan substrate portion of the light - emitting device is bonded, the electrodes of each electrode and the light detection element of the L ED tip of the light - emitting device a plurality of conductive patterns associated with each of the light - emitting device wherein metals base printed and the wiring board and the gold and each of the electrodes of the L ED each electrode and the light detection element chips genera and base printed wiring board corresponding Tagged conductive pattern is electrically connected via at least a bonding wire, the wall portion of the light - emitting device is made are notch through which the bonding wire is formed, Said arrangement The substrate for use is formed with a conductor pattern electrically connected to each electrode of the photodetecting element on the surface side opposite to the base substrate portion side, and a cutout portion communicating with the first opening window is formed. The light detection element forming substrate has a cutout portion communicating with the second opening window, and the light emitting device includes a portion of each of the conductor patterns of the light distribution substrate. A pad to which the bonding wire is connected through the notch of the photodetecting element forming substrate is configured .

この発明によれば、発光装置と金属ベースプリント配線板とは、ＬＥＤチップの各電極および光検出素子の各電極それぞれと金属ベースプリント配線板の対応付けられた導体パターンとが少なくともボンディングワイヤを介して電気的に接続されており、発光装置の壁部には、ボンディングワイヤを通す切欠部が形成されているので、発光装置のベース基板部および壁部に従来のような貫通孔配線を設ける必要がなく、ＬＥＤチップから放射される光の一部を検出する光検出素子を備えた発光装置の構造の簡略化による低コスト化を図れ、また、発光装置のベース基板部に従来のような外部接続用電極、放熱用パッド部、貫通孔配線、サーマルビアなどを電気的に絶縁する絶縁膜を設ける必要がなく、ベース基板部の前記他表面の全面を金属ベースプリント配線板に接合することが可能となり、ＬＥＤチップで発生した熱をベース基板部および金属ベースプリント配線板を通して広範囲に効率良く放熱させることができるから、ＬＥＤチップの温度上昇を抑制できる。   According to the present invention, the light emitting device and the metal base printed wiring board are configured such that each electrode of the LED chip, each electrode of the light detection element, and the conductor pattern associated with the metal base printed wiring board are at least via the bonding wires. Since a notch through which a bonding wire is passed is formed in the wall portion of the light emitting device, it is necessary to provide a conventional through-hole wiring in the base substrate portion and the wall portion of the light emitting device. The cost of the light emitting device can be reduced by simplifying the structure of the light emitting device provided with a light detecting element for detecting a part of the light emitted from the LED chip. There is no need to provide an insulating film that electrically insulates the connection electrode, heat dissipation pad, through-hole wiring, thermal via, etc., and the entire surface of the other surface of the base substrate is made of metal. Over it becomes possible to bond the splint wiring board, since the heat generated in the LED chip can be dissipated extensively efficiently through the base board and the metal base printed wiring board can suppress an increase in the temperature of the LED chip.

請求項２の発明は、請求項１の発明において、前記金属ベースプリント配線板における前記発光装置の接合面側において前記発光装置および前記各ボンディングワイヤを封止し前記発光装置から放射されたる光の配光を制御するレンズ状封止部を備えることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the light emitted from the light emitting device is sealed by sealing the light emitting device and the bonding wires on the bonding surface side of the light emitting device in the metal base printed wiring board. A lens-shaped sealing portion that controls light distribution is provided.

この発明によれば、前記発光装置および前記各ボンディングワイヤを封止し前記発光装置から放射されたる光の配光を制御するレンズ状封止部を備えているので、前記発光装置自体に前記ＬＥＤチップを封止する封止部を設ける必要がなく、前記発光装置の製造が容易になるから、低コスト化を図れる。   According to this invention, since the light emitting device and each bonding wire are sealed and the lens-shaped sealing portion for controlling the light distribution of the light emitted from the light emitting device is provided, the light emitting device itself has the LED. Since it is not necessary to provide a sealing portion for sealing the chip and the light emitting device can be easily manufactured, the cost can be reduced.

請求項１の発明では、ＬＥＤチップから放射される光の一部を検出する光検出素子を備えた発光装置の構造の簡略化による低コスト化を図れ、且つ、ＬＥＤチップの温度上昇を抑制できるという効果がある。   According to the first aspect of the present invention, it is possible to reduce the cost by simplifying the structure of the light emitting device provided with the light detecting element for detecting a part of the light emitted from the LED chip, and to suppress the temperature rise of the LED chip. There is an effect.

実施形態１の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図、（ｃ）は（ｂ）のＢ−Ｂ’概略断面図である。1A and 1B show a light-emitting device of Embodiment 1, in which FIG. 1A is a schematic cross-sectional view, FIG. 1B is a main part schematic plan view, and FIG. 実施形態２の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 2 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態３の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 3 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 従来例を示すＬＥＤモジュールの概略断面図である。It is a schematic sectional drawing of the LED module which shows a prior art example. 同上のＬＥＤモジュールにおける発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of the light-emitting device in an LED module same as the above. 同上のＬＥＤモジュールにおける発光装置のベース基板を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＡ−Ａ’概略断面図、（ｃ）は（ａ）のＢ−Ｂ’概略断面図である。The base substrate of the light-emitting device in an LED module same as the above is shown, (a) is a schematic plan view, (b) is a schematic cross-sectional view along AA ′ in (a), and (c) is a schematic cross-sectional view along BB ′ in (a). It is sectional drawing.

（実施形態１）
以下、本実施形態のＬＥＤモジュールについて図１に基づいて説明するが、図１（ａ）は同図（ｂ）のＡ−Ａ’断面に対応する概略断面図である。 (Embodiment 1)
Hereinafter, although the LED module of this embodiment is demonstrated based on FIG. 1, Fig.1 (a) is a schematic sectional drawing corresponding to the AA 'cross section of the same figure (b).

本実施形態のＬＥＤモジュールは、ＬＥＤチップ１および当該ＬＥＤチップ１から放射される光の一部を検出する光検出素子４を有する発光装置１０と、発光装置１０が実装された金属ベースプリント配線板７０とを備えている。なお、図１（ｃ）では、金属ベースプリント配線板７０および後述のレンズ状封止部８の図示を省略してある。   The LED module of this embodiment includes a light emitting device 10 having an LED chip 1 and a light detection element 4 that detects a part of light emitted from the LED chip 1, and a metal base printed wiring board on which the light emitting device 10 is mounted. 70. In addition, in FIG.1 (c), illustration of the metal base printed wiring board 70 and the lens-shaped sealing part 8 mentioned later is abbreviate | omitted.

ここにおいて、発光装置１０は、半導体基板であるシリコン基板（以下、第１のシリコン基板ともいう）２０ａを用いて形成されＬＥＤチップ１が一表面側に搭載されるベース基板２０と、半導体基板であるシリコン基板（以下、第２のシリコン基板ともいう）３０ａを用いて形成されＬＥＤチップ１から放射される光を出射するための第１の開口窓３１が形成されベース基板２０の上記一表面側に接合された配光用基板３０と、半導体基板であるシリコン基板（以下、第３のシリコン基板ともいう）４０ａを用いて形成されＬＥＤチップ１から放射される光を出射するための第２の開口窓４１が形成されるとともに光検出素子４が形成された光検出素子形成基板４０とで構成される３次元構造体６を備えている。   Here, the light emitting device 10 includes a base substrate 20 that is formed using a silicon substrate (hereinafter also referred to as a first silicon substrate) 20a that is a semiconductor substrate, the LED chip 1 is mounted on one surface side, and a semiconductor substrate. A first opening window 31 for emitting light emitted from the LED chip 1 is formed using a silicon substrate (hereinafter also referred to as a second silicon substrate) 30a, and the one surface side of the base substrate 20 is formed. A light distribution substrate 30 bonded to the substrate and a silicon substrate (hereinafter also referred to as a third silicon substrate) 40a, which is a semiconductor substrate, are formed to emit light emitted from the LED chip 1. A three-dimensional structure 6 is provided that includes an opening window 41 and a light detection element forming substrate 40 on which the light detection element 4 is formed.

なお、本実施形態における発光装置１０では、ベース基板２０が、ＬＥＤチップ１が一表面側に搭載されるベース基板部６１を構成し、配光用基板３０と光検出素子形成基板４０とで、ベース基板部６１から突設されＬＥＤチップ１を囲むとともに光検出素子４が形成された壁部６２を構成している。要するに、発光装置１０は、ＬＥＤチップ１が一表面側に搭載されるベース基板部６１とベース基板部６１から突設されＬＥＤチップ１を囲むとともに光検出素子４が形成された壁部６２とを有する３次元構造体６が、３枚の半導体基板（シリコン基板２０ａ，３０ａ，４０ａ）を用いて形成されている。なお、本実施形態では、３次元構造体６が３枚の半導体基板を用いて形成されているが、少なくとも２枚の半導体基板を用いて形成すればよく、例えば、第３のシリコン基板４０ａを用いずに、第２のシリコン基板３０ａを用いて形成する配光用基板３０に光検出素子４を設けることで、配光用基板３０のみにより壁部６２を構成するようにしてもよい。   In the light emitting device 10 according to the present embodiment, the base substrate 20 constitutes a base substrate portion 61 on which the LED chip 1 is mounted on one surface side, and the light distribution substrate 30 and the light detection element formation substrate 40 include: A wall portion 62 is provided which protrudes from the base substrate portion 61 and surrounds the LED chip 1 and in which the light detection element 4 is formed. In short, the light emitting device 10 includes a base substrate portion 61 on which the LED chip 1 is mounted on one surface side, and a wall portion 62 that protrudes from the base substrate portion 61 and surrounds the LED chip 1 and on which the light detection element 4 is formed. The three-dimensional structure 6 is formed using three semiconductor substrates (silicon substrates 20a, 30a, 40a). In this embodiment, the three-dimensional structure 6 is formed using three semiconductor substrates. However, the three-dimensional structure 6 may be formed using at least two semiconductor substrates. For example, the third silicon substrate 40a is formed. Instead of using, the light detection element 4 may be provided on the light distribution substrate 30 formed by using the second silicon substrate 30 a, so that the wall portion 62 may be configured only by the light distribution substrate 30.

上述の光検出素子形成基板４０は、第２の開口窓４１の開口面積が、配光用基板３０における光検出素子形成基板４０側の表面での第１の開口窓３１の開口面積よりも小さく設定されており、第２の開口窓４１の周部に光検出素子４の受光部４ｃが形成されている。ここで、光検出素子４の受光部４ｃは、光検出素子形成基板４０におけるベース基板２０との対向面側に形成されている。   In the above-described light detection element formation substrate 40, the opening area of the second opening window 41 is smaller than the opening area of the first opening window 31 on the surface of the light distribution substrate 30 on the light detection element formation substrate 40 side. The light receiving portion 4 c of the light detection element 4 is formed around the second opening window 41. Here, the light receiving portion 4 c of the light detecting element 4 is formed on the surface of the light detecting element forming substrate 40 facing the base substrate 20.

上述の各シリコン基板２０ａ，３０ａ，４０ａとしては、導電形がｎ形で一表面が（１００）面の単結晶シリコン基板を用いている。   As each of the silicon substrates 20a, 30a and 40a described above, a single crystal silicon substrate having an n-type conductivity and a (100) plane on one surface is used.

また、本実施形態では、配光用基板３０における第１の開口窓３１の内側面が、アルカリ系溶液（例えば、ＴＭＡＨ溶液、ＫＯＨ溶液など）を用いた異方性エッチングにより形成された（１１１）面により構成されており（つまり、配光用基板３０は、第１の開口窓３１の開口面積がベース基板２０から離れるにつれて徐々に大きくなっており）、ＬＥＤチップ１から放射された光を前方へ反射するミラーを構成している。   In the present embodiment, the inner surface of the first opening window 31 in the light distribution substrate 30 is formed by anisotropic etching using an alkaline solution (for example, a TMAH solution, a KOH solution, etc.) (111 ) (That is, the light distribution substrate 30 gradually increases as the opening area of the first opening window 31 increases from the base substrate 20), and the light emitted from the LED chip 1 is reduced. It constitutes a mirror that reflects forward.

ところで、本実施形態における発光装置１０では、ＬＥＤチップ１として、結晶成長用基板として導電性基板を用い厚み方向の両面に電極１２ａ，１２ｂが形成された可視光ＬＥＤチップ（例えば、青色ＬＥＤチップ、赤色ＬＥＤチップ、緑色ＬＥＤチップなど）を用いており、光検出素子４をフォトダイオードにより構成している。なお、ＬＥＤチップ１の構造や発光色などは特に限定するものではなく、紫外線ＬＥＤチップでもよい。   By the way, in the light-emitting device 10 in this embodiment, as the LED chip 1, a visible light LED chip (for example, a blue LED chip, which has electrodes 12a and 12b formed on both surfaces in the thickness direction using a conductive substrate as a crystal growth substrate). A red LED chip, a green LED chip, etc.) are used, and the photodetecting element 4 is constituted by a photodiode. In addition, the structure and emission color of the LED chip 1 are not particularly limited, and an ultraviolet LED chip may be used.

一方、上述のベース基板２０は、第１のシリコン基板２０ａの一表面側にシリコン酸化膜からなる第１の絶縁膜２３が形成されており、第１の絶縁膜２３上に、ＬＥＤチップ１がダイボンドされ電気的に接続されるダイパッド部２５ｂａと、一端部が金属ベースプリント配線板７０の導体パターン７３ｂに接合されるボンディングワイヤ１４の他端部が接合されるパッド２５ｂｂと、配光用基板３０と接合するための接合用金属層２９とが連続一体に形成されている。ここにおいて、金属ベースプリント配線板７０には、ＬＥＤチップ１におけるダイパッド部２５ｂａ側とは反対側の電極１２ａに対応付けられた導体パターン７３ａが形成されており、当該導体パターン７３ａとＬＥＤチップ１の電極１２ａとがボンディングワイヤ１４を介して電気的に接続されている。   On the other hand, in the base substrate 20 described above, a first insulating film 23 made of a silicon oxide film is formed on one surface side of the first silicon substrate 20a, and the LED chip 1 is formed on the first insulating film 23. A die pad portion 25ba that is die-bonded and electrically connected, a pad 25bb that is bonded to the other end portion of the bonding wire 14 whose one end portion is bonded to the conductor pattern 73b of the metal base printed wiring board 70, and the light distribution substrate 30 And a bonding metal layer 29 for bonding to each other are integrally formed. Here, the metal base printed wiring board 70 is formed with a conductor pattern 73a associated with the electrode 12a opposite to the die pad portion 25ba side of the LED chip 1, and the conductor pattern 73a and the LED chip 1 are connected to each other. The electrode 12a is electrically connected via a bonding wire 14.

なお、ダイパッド部２５ｂａおよびパッド２５ｂｂと接合用金属層２９とは分離されていてもよい。また、ＬＥＤチップ１としては、厚み方向の一面側に両電極１２ａ，１２ｂが形成されたものを用いてもよく、この場合は、ＬＥＤチップ１の各電極１２ａ，１２ｂそれぞれを金属ベースプリント配線板７０において各電極１２ａ，１２ｂそれぞれに対応付けられた導体パターン７３ａ，７３ｄとボンディングワイヤ１４，１４を介して電気的に接続すればよい。   The die pad portion 25ba and the pad 25bb and the bonding metal layer 29 may be separated. The LED chip 1 may be one in which both electrodes 12a and 12b are formed on one surface side in the thickness direction. In this case, each of the electrodes 12a and 12b of the LED chip 1 is a metal base printed wiring board. 70, the conductive patterns 73a and 73d associated with the respective electrodes 12a and 12b may be electrically connected to each other through the bonding wires 14 and 14.

ベース基板２０のダイパッド部２５ｂａ、パッド２５ｂｂおよび接合用金属層２９は、第１の絶縁膜２３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同一レベル面上に同一厚さで同時に形成してある。なお、本実施形態では、第１の絶縁膜２３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と第１の絶縁膜２３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。   The die pad portion 25ba, the pad 25bb, and the bonding metal layer 29 of the base substrate 20 are configured by a laminated film of a Ti film formed on the first insulating film 23 and an Au film formed on the Ti film. They are simultaneously formed with the same thickness on the same level surface. In this embodiment, the thickness of the Ti film on the first insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the first insulating film 23, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used.

また、配光用基板３０は、第２のシリコン基板３０ａにおいてベース基板２０に対向する一表面側にシリコン酸化膜からなる第２の絶縁膜３３ａが形成されるとともに、第２のシリコン基板３０ａの他表面側にシリコン酸化膜からなる第３の絶縁膜３３ｂが形成されており、第２の絶縁膜３３ａ上に、ベース基板２０の接合用金属層２９と接合される接合用金属層３６が形成され、第３の絶縁膜３３ｂ上に、光検出素子４の各電極（図示せず）それぞれと電気的に接続される導体パターン３７ｃ，３７ｄが形成されている。ここで、各導体パターン３７ｃ，３７ｄは、金属ベースプリント配線板７０において光検出素子４の上記各電極それぞれに対応付けられた導体パターン７３ｃ，７３ｄとボンディングワイヤ１４，１４を介して電気的に接続される。   In addition, the light distribution substrate 30 has a second insulating film 33a made of a silicon oxide film formed on one surface side of the second silicon substrate 30a facing the base substrate 20, and the second silicon substrate 30a. A third insulating film 33b made of a silicon oxide film is formed on the other surface side, and a bonding metal layer 36 bonded to the bonding metal layer 29 of the base substrate 20 is formed on the second insulating film 33a. On the third insulating film 33b, conductor patterns 37c and 37d that are electrically connected to the respective electrodes (not shown) of the light detection element 4 are formed. Here, the conductor patterns 37c and 37d are electrically connected to the conductor patterns 73c and 73d associated with the electrodes of the light detection element 4 on the metal base printed wiring board 70 via the bonding wires 14 and 14, respectively. Is done.

また、配光用基板３０は、第３の絶縁膜３３ｂ上に、光検出素子形成基板４０と接合するための接合用金属層３８が形成されている。ここで、各導体パターン３７ｃ，３７ｄおよび接合用金属層３８は、第３の絶縁膜３３ｂにより互いに電気的に絶縁されている。   In addition, the light distribution substrate 30 has a bonding metal layer 38 formed on the third insulating film 33b for bonding to the light detection element formation substrate 40. Here, the conductor patterns 37c and 37d and the bonding metal layer 38 are electrically insulated from each other by the third insulating film 33b.

ここにおいて、接合用金属層３６は、第２の絶縁膜３３ａ上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成されている。また、各導体パターン３７ｃ，３７ｄおよび接合用金属層３８は、第３の絶縁膜３３ｂ上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成されている。なお、本実施形態では、各絶縁膜３３ａ，３３ｂ上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と各絶縁膜３３ａ，３３ｂとの間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。   Here, the bonding metal layer 36 is composed of a laminated film of a Ti film formed on the second insulating film 33a and an Au film formed on the Ti film, and is formed at the same time. Each of the conductor patterns 37c, 37d and the bonding metal layer 38 is composed of a laminated film of a Ti film formed on the third insulating film 33b and an Au film formed on the Ti film. It is formed at the same time. In this embodiment, the thickness of the Ti film on each of the insulating films 33a and 33b is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and each insulating film 33a, 33b, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used.

光検出素子形成基板４０は、第３のシリコン基板４０ａにおいて配光用基板３０に対向する一表面側に、光検出素子４の上記各電極が形成されるとともに、配光用基板３０の接合用金属層３８と接合される接合用金属層４８が形成されている。ここにおいて、光検出素子４は、フォトダイオードにより構成されており、２つの上記電極のうちの一方の電極が、フォトダイオードのｐ形領域４ｃに電気的に接続され、他方の電極が、上記フォトダイオードのｎ形領域４ｄを構成する第３のシリコン基板４０ａに電気的に接続されている。   The light detection element forming substrate 40 is formed with the electrodes of the light detection element 4 formed on one surface side of the third silicon substrate 40 a facing the light distribution substrate 30, and for bonding the light distribution substrate 30. A bonding metal layer 48 to be bonded to the metal layer 38 is formed. Here, the light detection element 4 is configured by a photodiode, and one of the two electrodes is electrically connected to the p-type region 4c of the photodiode, and the other electrode is connected to the photo diode. It is electrically connected to a third silicon substrate 40a constituting the n-type region 4d of the diode.

また、光検出素子形成基板４０は、第３のシリコン基板４０ａの上記一表面側にシリコン酸化膜からなる第４の絶縁膜４３が形成されており、当該第４の絶縁膜４３がフォトダイオードの反射防止膜を兼ねている。また、光検出素子形成基板４０は、上記一方の電極が、第４の絶縁膜４３に形成した第１のコンタクトホール（図示せず）を通してｐ形領域４ｃと電気的に接続され、上記他方の電極４７ｄが第４の絶縁膜４３に形成した第２のコンタクトホール（図示せず）を通してｎ形領域４ｄと電気的に接続されている。ここにおいて、光検出素子４の上記各電極および接合用金属層４８は、第４の絶縁膜４３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成してある。なお、本実施形態では、第４の絶縁膜４３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と第４の絶縁膜４３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。   The photodetecting element forming substrate 40 has a fourth insulating film 43 made of a silicon oxide film formed on the one surface side of the third silicon substrate 40a, and the fourth insulating film 43 is a photodiode. Also serves as an antireflection film. In the photodetecting element formation substrate 40, the one electrode is electrically connected to the p-type region 4 c through a first contact hole (not shown) formed in the fourth insulating film 43, and the other electrode The electrode 47d is electrically connected to the n-type region 4d through a second contact hole (not shown) formed in the fourth insulating film 43. Here, each of the electrodes and the bonding metal layer 48 of the photodetecting element 4 is composed of a laminated film of a Ti film formed on the fourth insulating film 43 and an Au film formed on the Ti film. And formed at the same time. In this embodiment, the thickness of the Ti film on the fourth insulating film 43 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. In addition, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the fourth insulating film 43, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used.

ここで、上述のベース基板２０の外周形状が矩形状であり、上述の配光用基板３０は、当該配光用基板３０においてベース基板２０の外周形状の４辺に対応する４つの枠片のうちの１つの枠片の中間部を切り欠くことにより、第１の開口窓３１に連通する切欠部６３ａが形成され、光検出素子形成基板４０は、当該光検出素子形成基板４０においてベース基板２０の外周形状の４辺に対応する４つの枠片のうちの１つの枠片を切り欠くことにより切欠部６３ｂが形成されて第２の開口窓４１に連通している。しかして、３次元構造体６は、配光用基板３０における光検出素子形成基板４０側の第３の絶縁膜３３ｂの一部および各導体パターン３７ｃ，３７ｄそれぞれの一部が露出しており、各導体パターン３７ｃ，３７ｄそれぞれの上記一部が、ボンディングワイヤ１４，１４が接合されるパッドを構成している。しかして、本実施形態では、３次元構造体６が、ＬＥＤチップ１が実装されるとともに光検出素子４が一体に設けられた実装基板を構成している。また、本実施形態では、配光用基板３０の切欠部６３ａと光検出素子形成基板４０の切欠部６３ｂとで、発光装置１０の壁部６２において各ボンディングワイヤ１４を通す切欠部６３を構成している。   Here, the outer peripheral shape of the above-described base substrate 20 is rectangular, and the above-described light distribution substrate 30 includes four frame pieces corresponding to the four sides of the outer peripheral shape of the base substrate 20 in the light distribution substrate 30. By cutting out an intermediate portion of one of the frame pieces, a cutout portion 63a communicating with the first opening window 31 is formed, and the photodetecting element forming substrate 40 is the base substrate 20 in the photodetecting element forming substrate 40. A notch 63b is formed by cutting out one of the four frame pieces corresponding to the four sides of the outer peripheral shape, and communicates with the second opening window 41. Therefore, in the three-dimensional structure 6, a part of the third insulating film 33b on the light detection element forming substrate 40 side in the light distribution substrate 30 and a part of each of the conductor patterns 37c and 37d are exposed. Part of each of the conductor patterns 37c and 37d constitutes a pad to which the bonding wires 14 and 14 are bonded. Thus, in the present embodiment, the three-dimensional structure 6 constitutes a mounting substrate on which the LED chip 1 is mounted and the light detection element 4 is integrally provided. In the present embodiment, the notch 63 a of the light distribution substrate 30 and the notch 63 b of the light detection element forming substrate 40 constitute the notch 63 through which each bonding wire 14 passes in the wall 62 of the light emitting device 10. ing.

上述の発光装置１０の製造にあたっては、例えば、光検出素子４、第４の絶縁膜４３、および接合用金属層４８が形成された第３のシリコン基板４０ａと配光用基板３０とを例えば低温での直接接合が可能な常温接合法などにより接合する第１の接合工程を行った後、第３のシリコン基板４０ａを所望の厚みまで研磨する研磨工程を行い、その後、誘導結合プラズマ（ＩＣＰ）型のドライエッチング装置などを用いて第３のシリコン基板４０ａに第２の開口窓４１および切欠部６３ｂを形成する第２開口窓形成工程を行うことで光検出素子形成基板４０を完成させてから、ＬＥＤチップ１が搭載されたベース基板２０と配光用基板３０とを常温接合法などにより接合する第２の接合工程を行うようにすればよい。なお、常温接合法では、接合前に互いの接合表面へアルゴンのプラズマ若しくはイオンビーム若しくは原子ビームを真空中で照射して各接合表面の清浄化・活性化を行ってから、常温下で接合表面同士を接触させ適宜の荷重を印加して直接接合する。   In manufacturing the light emitting device 10 described above, for example, the third silicon substrate 40a on which the light detection element 4, the fourth insulating film 43, and the bonding metal layer 48 are formed and the light distribution substrate 30 are, for example, at a low temperature. After performing a first bonding step for bonding by a room temperature bonding method or the like that allows direct bonding at a predetermined temperature, a polishing step for polishing the third silicon substrate 40a to a desired thickness is performed, and then inductively coupled plasma (ICP) After the photodetection element forming substrate 40 is completed by performing a second opening window forming step of forming the second opening window 41 and the notch 63b in the third silicon substrate 40a using a mold dry etching apparatus or the like. A second bonding step for bonding the base substrate 20 on which the LED chip 1 is mounted and the light distribution substrate 30 by a room temperature bonding method or the like may be performed. In the room temperature bonding method, each bonding surface is irradiated with argon plasma, ion beam or atomic beam in vacuum before bonding to clean and activate each bonding surface, and then the bonding surface at room temperature. They are brought into contact with each other and an appropriate load is applied to join them directly.

上述の第１の接合工程では、第３のシリコン基板４０ａの接合用金属層４８と配光用基板３０の接合用金属層３８とが接合されるとともに、光検出素子４の上記各電極と配光用基板３０の導体パターン３７ｃ，３７ｄとの互いに重なる部位同士が接合され電気的に接続される。また、第２の接合工程では、ベース基板２０の接合用金属層２９と配光用基板３０の接合用金属層３６とが接合される。上述のように常温接合法では、各接合表面の清浄化・活性化を行ってから、常温下で適宜の荷重を印加しいているが、常温下に限らず、例えば、ＬＥＤチップ１へ熱ダメージが生じない温度（ＬＥＤチップ１のジャンクション温度が最大ジャンクション温度を超えない温度）であれば、加熱条件下（例えば、８０℃〜１００℃程度に加熱した条件下）において適宜の荷重を印加するようにしてもよく、加熱条件下において適宜の荷重を印加して接合することで接合信頼性をより一層高めることが可能となる。   In the first bonding step described above, the bonding metal layer 48 of the third silicon substrate 40a and the bonding metal layer 38 of the light distribution substrate 30 are bonded, and the electrodes of the photodetecting element 4 are arranged. The overlapping portions of the light substrate 30 with the conductor patterns 37c and 37d are joined and electrically connected. In the second bonding step, the bonding metal layer 29 of the base substrate 20 and the bonding metal layer 36 of the light distribution substrate 30 are bonded. As described above, in the room-temperature bonding method, an appropriate load is applied at room temperature after cleaning and activation of each bonding surface, but not limited to room temperature, for example, thermal damage to the LED chip 1 If the temperature does not occur (temperature at which the junction temperature of the LED chip 1 does not exceed the maximum junction temperature), an appropriate load is applied under heating conditions (for example, conditions of heating to about 80 ° C. to 100 ° C.). In other words, it is possible to further improve the bonding reliability by applying an appropriate load under the heating condition for bonding.

また、上述の発光装置１０の製造にあたっては、上述の各シリコン基板２０ａ，３０ａ，４０ａとして、それぞれベース基板２０、配光用基板３０、光検出素子形成基板４０を多数形成可能なシリコンウェハを用い、上述の第１の接合工程、研磨工程、第２開口窓形成工程、第２の接合工程などの各工程をウェハレベルで行ってから、ダイシング工程により３次元構造体６のサイズに分割されている。したがって、上述の発光装置１０の製造方法によれば、ベース基板２０と配光用基板３０と光検出素子形成基板４０とが同じ外形サイズとなり、また、各接合工程において、低温での直接接合が可能な常温接合法などを採用しているので、各接合工程でＬＥＤチップ１のジャンクション温度が最大ジャンクション温度を超えるのを防止することができる。   In manufacturing the light emitting device 10 described above, a silicon wafer capable of forming a large number of the base substrate 20, the light distribution substrate 30, and the light detection element forming substrate 40 is used as each of the silicon substrates 20a, 30a, and 40a. The first bonding step, the polishing step, the second opening window forming step, the second bonding step, and the like described above are performed at the wafer level and then divided into the size of the three-dimensional structure 6 by the dicing step. Yes. Therefore, according to the method for manufacturing the light emitting device 10 described above, the base substrate 20, the light distribution substrate 30, and the light detection element forming substrate 40 have the same outer size, and direct bonding at low temperature is possible in each bonding step. Since a possible room temperature bonding method is employed, it is possible to prevent the junction temperature of the LED chip 1 from exceeding the maximum junction temperature in each bonding process.

また、上述の金属ベースプリント配線板７０は、発光装置１０に対向する一表面側において、発光装置１０のベース基板部６１であるベース基板２０の他表面（ここでは、第１のシリコン基板２０ａの上記他表面）が接合される接合領域の周囲に、発光装置１０のＬＥＤチップ１の各電極１２ａ，１２ｂおよび光検出素子４の上記各電極それぞれに対応付けられた複数の導体パターン７３ａ，７３ｂ，７３ｃ，７３ｄを有している。ここで、金属ベースプリント配線板７０は、ベース基板２０の上記他表面の全面が半田（ＡｕＳｎ、ＡｇＳｎＣｕなどの鉛フリー半田）などからなる接合部８４を介して接合される導体パターン７４を有しており、導体パターン７４の表面が上記接合領域を構成している。なお、金属ベースプリント配線板７０における絶縁層７２の一部を除去して、金属板７１の表面を上記接合領域としてもよく、この場合には、ＬＥＤチップ１から金属ベースプリント配線板７０の他表面までの熱抵抗をより小さくできるので、放熱性が更に向上する。   In addition, the above-described metal base printed wiring board 70 has the other surface (here, the first silicon substrate 20a) of the base substrate 20 that is the base substrate portion 61 of the light emitting device 10 on one surface side facing the light emitting device 10. A plurality of conductor patterns 73a, 73b associated with the respective electrodes 12a, 12b of the LED chip 1 of the light emitting device 10 and the respective electrodes of the light detection element 4 around the bonding region where the other surface is bonded. 73c, 73d. Here, the metal base printed wiring board 70 has a conductor pattern 74 in which the entire surface of the other surface of the base substrate 20 is bonded via a bonding portion 84 made of solder (lead-free solder such as AuSn or AgSnCu). The surface of the conductor pattern 74 constitutes the joining region. In addition, a part of the insulating layer 72 in the metal base printed wiring board 70 may be removed, and the surface of the metal plate 71 may be used as the bonding region. Since the thermal resistance to the surface can be further reduced, the heat dissipation is further improved.

ところで、本実施形態のＬＥＤモジュールにおける発光装置１０と金属ベースプリント配線板７０とは、ＬＥＤチップ１の各電極１２ａ，１２ｂおよび光検出素子４の上記各電極それぞれと金属ベースプリント配線板７０の対応付けられた導体パターン７３ａ，７３ｂ，７３ｃ，７３ｄとが、それぞれ、少なくともボンディングワイヤ１４，１４，１４，１４を介して電気的に接続されており、発光装置１０の３次元構造体６の壁部６２には、各ボンディングワイヤ１４，１４，１４，１４を通す切欠部６３が形成されている。なお、上述の説明から分かるように、ＬＥＤチップ１の電極１２ａと導体パターン７３ａとはボンディングワイヤ１４のみを介して電気的に接続され、ＬＥＤチップ１の電極１２ｂと導体パターン７３ｂとは、ダイパッド部２５ｂａ、パッド２５ｂｂおよびボンディングワイヤ１４を介して電気的に接続され、光検出素子４の上記各電極と導体パターン７３ｃ，７３ｄとは、導体パターン３７ｃ，３７ｄおよびボンディングワイヤ１４，１４を介して電気的に接続されている。   By the way, the light emitting device 10 and the metal base printed wiring board 70 in the LED module of the present embodiment correspond to the electrodes 12a and 12b of the LED chip 1 and the respective electrodes of the light detection element 4 and the metal base printed wiring board 70, respectively. The attached conductor patterns 73a, 73b, 73c, and 73d are electrically connected to each other through at least bonding wires 14, 14, 14, and 14, and the wall portion of the three-dimensional structure 6 of the light emitting device 10 is connected. 62 is formed with a notch 63 through which the bonding wires 14, 14, 14, 14 pass. As can be seen from the above description, the electrode 12a and the conductor pattern 73a of the LED chip 1 are electrically connected only via the bonding wires 14, and the electrode 12b and the conductor pattern 73b of the LED chip 1 are connected to the die pad portion. 25ba, the pad 25bb and the bonding wire 14 are electrically connected, and the electrodes of the light detection element 4 and the conductor patterns 73c and 73d are electrically connected via the conductor patterns 37c and 37d and the bonding wires 14 and 14. It is connected to the.

また、３次元構造体６の壁部６２の切欠部６３は、配光用基板３０の切欠部６３ａと光検出素子形成基板４０の切欠部６３ｂとで構成されている。   Further, the notch 63 of the wall 62 of the three-dimensional structure 6 includes a notch 63 a of the light distribution substrate 30 and a notch 63 b of the light detection element forming substrate 40.

しかして、本実施形態のＬＥＤモジュールでは、配光用基板３０および光検出素子形成基板４０に切欠部６３ａ，６３ｂを形成してあることにより、ＬＥＤチップ１の両電極１２ａ，１２ｂに電気的に接続される２本のボンディングワイヤ１４，１４を通すことができ（光検出素子形成基板４上を通さずに３次元構造体６の内外に引き回すことができ）、光検出素子形成基板４０に切欠部６３ｂを形成してあることにより、光検出素子４の上記各電極に電気的に接続される２本のボンディングワイヤ１４，１４を通すことができる（光検出素子形成基板４上を通さずに３次元構造体６の内外に引き回すことができる）から、ボンディングワイヤ１４に起因してＬＥＤモジュールの低背化が制限されるのを防止することが可能となる。   Therefore, in the LED module of the present embodiment, the notches 63a and 63b are formed in the light distribution substrate 30 and the light detection element formation substrate 40, so that the electrodes 12a and 12b of the LED chip 1 are electrically connected. The two bonding wires 14 and 14 to be connected can be passed (can be routed in and out of the three-dimensional structure 6 without passing through the light detection element formation substrate 4), and the light detection element formation substrate 40 is notched. By forming the part 63b, the two bonding wires 14 and 14 electrically connected to the respective electrodes of the light detection element 4 can be passed (without passing through the light detection element forming substrate 4). Therefore, it is possible to prevent the LED module from being restricted from being lowered due to the bonding wire 14 from the inside and outside of the three-dimensional structure 6.

また、本実施形態のＬＥＤモジュールは、金属ベースプリント配線板７０における発光装置１０の接合面側において発光装置１０および当該発光装置１０に接続された各ボンディングワイヤ１４を封止し発光装置１０から放射されたる光の配光を制御する半球状のレンズ状封止部８を備えている。ここで、レンズ状封止部８は、シリコーン樹脂からなる透光性材料により形成されている。なお、レンズ部８の透光性材料は、シリコーン樹脂に限らず、例えば、エポキシ樹脂、アクリル樹脂、ポリカーボネート樹脂、ガラスなどを採用してもよい。また、レンズ状封止部８の形状は半球状に限らず、例えば、半楕円球状の形状でもよい。   In addition, the LED module of the present embodiment seals the light emitting device 10 and each bonding wire 14 connected to the light emitting device 10 on the joint surface side of the light emitting device 10 in the metal base printed wiring board 70 and emits from the light emitting device 10. A hemispherical lens-shaped sealing portion 8 for controlling the light distribution of the emitted light is provided. Here, the lens-shaped sealing portion 8 is formed of a translucent material made of silicone resin. The translucent material of the lens unit 8 is not limited to a silicone resin, and for example, an epoxy resin, an acrylic resin, a polycarbonate resin, glass, or the like may be employed. Moreover, the shape of the lens-shaped sealing portion 8 is not limited to a hemispherical shape, and may be, for example, a semi-elliptical spherical shape.

以上説明した本実施形態のＬＥＤモジュールでは、発光装置１０におけるＬＥＤチップ１の各電極１２ａ，１２ｂおよび光検出素子４の上記各電極それぞれと金属ベースプリント配線板７０の対応付けられた導体パターン７３ａ，７３ｂ，７３ｃ，７３ｄとが少なくともボンディングワイヤ１４，１４，１４，１４を介して電気的に接続されており、発光装置１０における３次元構造体（実装基板）６の壁部６２には、各ボンディングワイヤ１４を通す切欠部６３が形成されているので、発光装置１０のベース基板部６１および壁部６２に、図４〜図６を用いて説明した従来例のような貫通孔配線２４，３４（図４参照）を設ける必要がなく、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４を備えた発光装置１０の構造の簡略化による低コスト化を図れる。また、本実施形態のＬＥＤモジュールでは、発光装置１０のベース基板部６１であるベース基板２０の他表面側に上記従来例のような外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、放熱用パッド部２８、貫通孔配線２４、サーマルビア２６などを電気的に絶縁する絶縁膜２３を設ける必要がなく、ベース基板部６１の上記他表面の全面を金属ベースプリント配線板７０に接合することが可能となり、ＬＥＤチップ１で発生した熱をベース基板部６１および金属ベースプリント配線板７０を通して広範囲に効率良く放熱させることができるから、ＬＥＤチップ１の温度上昇を抑制できる。   In the LED module of the present embodiment described above, the electrodes 12a and 12b of the LED chip 1 and the electrodes of the light detection element 4 in the light emitting device 10 and the conductor patterns 73a and the associated metal base printed wiring board 70 are associated with each other. 73b, 73c, and 73d are electrically connected to each other through at least bonding wires 14, 14, 14, and 14, and the wall portion 62 of the three-dimensional structure (mounting substrate) 6 in the light-emitting device 10 is bonded to each bonding member. Since the notch 63 through which the wire 14 is passed is formed, the through-hole wirings 24 and 34 (as in the conventional example described with reference to FIGS. 4 to 6) are formed in the base substrate 61 and the wall 62 of the light emitting device 10. 4), the structure of the light emitting device 10 including the light detecting element 4 for detecting a part of the light emitted from the LED chip 1 is simplified. It attained a low cost by reduction. Further, in the LED module of the present embodiment, the external connection electrodes 27a, 27b, 27c, and 27d, and the heat dissipation pad portion as in the conventional example are formed on the other surface side of the base substrate 20 that is the base substrate portion 61 of the light emitting device 10. 28, it is not necessary to provide the insulating film 23 that electrically insulates the through-hole wiring 24, the thermal via 26, and the like, and the entire surface of the other surface of the base substrate portion 61 can be bonded to the metal base printed wiring board 70. Since the heat generated in the LED chip 1 can be efficiently radiated over a wide range through the base substrate portion 61 and the metal base printed wiring board 70, the temperature rise of the LED chip 1 can be suppressed.

また、本実施形態のＬＥＤモジュールでは、発光装置１０および各ボンディングワイヤ１４を封止し発光装置１０から放射されたる光の配光を制御するレンズ状封止部８を備えているので、発光装置１０自体にＬＥＤチップ１を封止する封止部を設ける必要がなく、発光装置１０の製造が容易になるから、低コスト化を図れる。   In addition, the LED module of the present embodiment includes the lens-shaped sealing portion 8 that seals the light emitting device 10 and each bonding wire 14 and controls the light distribution of the light emitted from the light emitting device 10. Since it is not necessary to provide the sealing part which seals LED chip 1 in 10 itself, manufacture of the light-emitting device 10 becomes easy, and cost reduction can be achieved.

また、本実施形態のＬＥＤモジュールでは、例えば、ＬＥＤチップ１として赤色ＬＥＤチップを採用した発光装置１０と、ＬＥＤチップ１として緑色ＬＥＤチップを採用した発光装置１０と、ＬＥＤチップ１として青色ＬＥＤチップを採用した発光装置１０とを同一の金属ベースプリント配線板７０上に互いに近接する形で実装するとともに、当該金属ベースプリント配線板７０に各発光装置１０のＬＥＤチップ１を駆動する駆動回路部と、各光検出素子４の出力がそれぞれの目標値に保たれるように駆動回路部から各発光色のＬＥＤチップ１に流れる電流をフィードバック制御する制御回路部などを設けておくことにより、各光検出素子４それぞれの出力に基づいて各発光色のＬＥＤチップ１の光出力を各別に制御することができ、各発光色ごとのＬＥＤチップ１の光出力の経時変化の違いなどによらず混色光（ここでは、白色光）の光色や色温度の精度を向上することができる。   In the LED module of this embodiment, for example, a light emitting device 10 that employs a red LED chip as the LED chip 1, a light emitting device 10 that employs a green LED chip as the LED chip 1, and a blue LED chip as the LED chip 1 are used. The adopted light emitting device 10 is mounted on the same metal base printed wiring board 70 so as to be close to each other, and the driving circuit unit that drives the LED chip 1 of each light emitting device 10 on the metal base printed wiring board 70; By providing a control circuit unit that feedback-controls the current flowing from the drive circuit unit to the LED chip 1 of each emission color so that the output of each photodetection element 4 is maintained at the respective target value, each photodetection is performed. Based on the output of each element 4, the light output of the LED chip 1 of each emission color can be controlled separately. LED chip 1 of the color mixture regardless such a difference in change with time of the optical output beam of each (here, white light) can improve the accuracy of the light color and color temperature.

（実施形態２）
本実施形態のＬＥＤモジュールの基本構成は実施形態１と略同じであり、図２に示すように、発光装置１０のベース基板部６１であるベース基板２０に複数（ここでは、４つ）のＬＥＤチップ１が搭載されるとともに、光検出素子形成基板４０に各ＬＥＤチップ１それぞれから放射される光の一部を各別に検出する複数（ここでは、４つ）の光検出素子４が設けられている点などが相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。また、図２（ａ）は、同図（ｂ）のＡ−Ａ’断面に対応する概略断面図である。 (Embodiment 2)
The basic configuration of the LED module of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 2, a plurality of (here, four) LEDs are provided on the base substrate 20 that is the base substrate portion 61 of the light emitting device 10. While the chip 1 is mounted, a plurality (four in this case) of light detection elements 4 are provided on the light detection element forming substrate 40 to individually detect a part of the light emitted from each LED chip 1. There are differences. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted. FIG. 2A is a schematic sectional view corresponding to the section AA ′ in FIG.

本実施形態における発光装置１０では、各ＬＥＤチップ１として互いに発光色の異なる可視光ＬＥＤチップを用いており、各ＬＥＤチップ１それぞれが互いに異なるダイパッド部２５ｂａにダイボンドされており、各ＬＥＤチップ１の電極１２ａそれぞれがボンディングワイヤ１４を介して金属ベースプリント配線板７０の対応する各導体パターン７３ａに各別に接続されている。ここにおいて、本実施形態では、発光色の異なる複数種のＬＥＤチップ１として、１つの赤色ＬＥＤチップ１ａと、２つの緑色ＬＥＤチップ１ｂ，１ｂと、１つの青色ＬＥＤチップ１ｃとを採用しており、赤色光と緑色光と青色光との混色光として白色光を得ることができる。ただし、各ＬＥＤチップ１の発光色は特に限定するものではなく、所望の混色光に応じて適宜選択すればよい。   In the light emitting device 10 according to the present embodiment, visible LED chips having different emission colors are used as the LED chips 1, and each LED chip 1 is die-bonded to a different die pad portion 25ba. Each of the electrodes 12 a is connected to each corresponding conductor pattern 73 a of the metal base printed wiring board 70 via the bonding wire 14. Here, in the present embodiment, one red LED chip 1a, two green LED chips 1b and 1b, and one blue LED chip 1c are employed as the plurality of types of LED chips 1 having different emission colors. White light can be obtained as mixed color light of red light, green light, and blue light. However, the emission color of each LED chip 1 is not particularly limited, and may be appropriately selected according to the desired mixed color light.

ところで、本実施形態における発光装置１０では、複数のＬＥＤチップ１が１つのベース基板２０に搭載されているのに対して、配光用基板３０の第１の開口窓３１および光検出素子形成基板４０の第２の開口窓４１を１つずつとしてあるので、各光検出素子４の検出精度を高めるために、第１の開口窓３１を各ＬＥＤチップ１の収納空間に区分する遮光壁を設けてもよいし、あるいは、各光検出素子４を、例えば、可視光域全域に分光感度を有するフォトダイオードとＬＥＤチップ１の発光色の波長域の光を選択的に透過させるフィルタとで構成するようにしてもよく、後者の方が、発光装置１０の平面サイズのより一層の小型化を図れる。なお、この種のフィルタとしては、例えば、屈折率が互いに異なる２種類の誘電体膜（例えば、ＴｉＯ２膜とＳｉＯ２膜）が周期的に積層された構造のものを採用すればよい。なお、本実施形態では、３次元構造体６の壁部６２について、ベース基板２０の外周形状の４辺に対応する４つの枠片のうちの２つの平行な枠片を切り欠くことにより、２つの切欠部６３，６３が形成されている。 By the way, in the light-emitting device 10 in this embodiment, while the several LED chip 1 is mounted in the one base substrate 20, the 1st opening window 31 and the light detection element formation board | substrate of the board | substrate 30 for light distribution Since there are 40 second opening windows 41 one by one, a light shielding wall is provided to divide the first opening window 31 into a storage space for each LED chip 1 in order to increase the detection accuracy of each light detection element 4. Alternatively, each photodetecting element 4 may be composed of, for example, a photodiode having spectral sensitivity over the entire visible light region and a filter that selectively transmits light in the wavelength region of the emission color of the LED chip 1. In the latter case, the planar size of the light emitting device 10 can be further reduced. As this type of filter, for example, a filter having a structure in which two types of dielectric films (for example, TiO 2 film and SiO 2 film) having different refractive indexes are periodically stacked may be employed. In the present embodiment, with respect to the wall portion 62 of the three-dimensional structure 6, two parallel frame pieces out of four frame pieces corresponding to the four sides of the outer peripheral shape of the base substrate 20 are cut out to obtain 2 Two notches 63, 63 are formed.

（実施形態３）
本実施形態のＬＥＤモジュールの基本構成は実施形態１と略同じであり、図３に示すように、配光用基板３０の切欠部６３ａが４つの枠片のうちの１つの枠片を切り欠くことにより形成されており、ベース基板部６１であるベース基板２０の上記一表面側に、光検出素子４の上記各電極に電気的に接続される導体パターン２５ｃ，２５ｄが露設されている点などが相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。また、図３（ａ）は、同図（ｂ）におけるＡ−Ａ’断面に対応する概略断面図である。 (Embodiment 3)
The basic configuration of the LED module of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 3, the notch 63a of the light distribution substrate 30 cuts out one of the four frame pieces. The conductor patterns 25c and 25d that are electrically connected to the electrodes of the light detection element 4 are exposed on the one surface side of the base substrate 20 that is the base substrate portion 61. Etc. are different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted. FIG. 3A is a schematic cross-sectional view corresponding to the cross section AA ′ in FIG.

本実施形態では、実施形態１にて説明した第２のシリコン基板３０ａの上記他表面側の導体パターン３７ｃ，３７ｄが光検出素子形成基板４０に重なる領域のみに形成されており、第２のシリコン基板３０ａの上記一表面側に、上記他表面側の導体パターン３７ｃ，３７ｄに貫通孔配線３４，３４を介して電気的に接続される連絡用導体パターン３５，３５が形成されており、各連絡用導体パターン３５，３５とベース基板２０の各導体パターン２５ｃ，２５ｄの一部とが接合されて電気的に接続されている。なお、貫通孔配線３４は、実施形態１にて説明した第２の絶縁膜３３ａおよび第３の絶縁膜３３ｂと連続して形成された絶縁膜３３により第２のシリコン基板３０ａと絶縁されている。また、貫通孔配線３４の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉなどを採用してもよい。   In the present embodiment, the conductor patterns 37c and 37d on the other surface side of the second silicon substrate 30a described in the first embodiment are formed only in the region overlapping the photodetecting element formation substrate 40, and the second silicon substrate Conductive conductor patterns 35 and 35 are formed on the one surface side of the substrate 30a and electrically connected to the conductor patterns 37c and 37d on the other surface side through the through-hole wirings 34 and 34, respectively. The conductor patterns 35 and 35 and a part of each conductor pattern 25c and 25d of the base substrate 20 are joined and electrically connected. The through-hole wiring 34 is insulated from the second silicon substrate 30a by the insulating film 33 formed continuously with the second insulating film 33a and the third insulating film 33b described in the first embodiment. . Moreover, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni may be adopted.

ところで、ベース基板２０の上記一表面側の導体パターン２５ｃ，２５ｃとパッド２５ｂｂとは第１の絶縁膜２３により電気的に絶縁されている。また、本実施形態では、金属ベースプリント配線板７０において光検出素子４の上記各電極それぞれに対応付けられた導体パターン７３ｃ，７３ｄがボンディングワイヤ１４，１４を介してベース基板２０の導体パターン２５ｃ，２５ｄと電気的に接続されている。   By the way, the conductor patterns 25c, 25c on the one surface side of the base substrate 20 and the pads 25bb are electrically insulated by the first insulating film 23. In the present embodiment, the conductor patterns 73c and 73d associated with the respective electrodes of the light detection element 4 in the metal base printed wiring board 70 are connected to the conductor patterns 25c and 25c of the base substrate 20 via the bonding wires 14 and 14, respectively. 25d is electrically connected.

しかして、本実施形態のＬＥＤモジュールでは、発光装置１０におけるＬＥＤチップ１の各電極１２ａ，１２ｂおよび光検出素子４の上記各電極それぞれと金属ベースプリント配線板７０の対応付けられた導体パターン７３ａ，７３ｂ，７３ｃ，７３ｄとが少なくともボンディングワイヤ１４，１４，１４，１４を介して電気的に接続されており、発光装置１０における３次元構造体（実装基板）６の壁部６２には、各ボンディングワイヤ１４を通す切欠部６３が形成されているので、発光装置１０のベース基板部６１に、図４〜図６を用いて説明した従来例のような貫通孔配線２４（図４参照）を設ける必要がなく、ＬＥＤチップ１から放射される光の一部を検出する光検出素子４を備えた発光装置１０の構造の簡略化による低コスト化を図れる。また、本実施形態のＬＥＤモジュールでは、発光装置１０のベース基板部６１であるベース基板２０の上記他表面側に上記従来例のような外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、放熱用パッド部２８、貫通孔配線２４、サーマルビア２６などを電気的に絶縁する絶縁膜２３を設ける必要がなく、ベース基板部６１の上記他表面の全面を金属ベースプリント配線板７０に接合することが可能となり、ＬＥＤチップ１で発生した熱をベース基板部６１および金属ベースプリント配線板７０を通して広範囲に効率良く放熱させることができるから、ＬＥＤチップ１の温度上昇を抑制できる。   Thus, in the LED module of the present embodiment, the electrodes 12a and 12b of the LED chip 1 and the electrodes of the light detection element 4 in the light emitting device 10 and the conductor patterns 73a and the associated metal base printed wiring board 70 are associated with each other. 73b, 73c, and 73d are electrically connected to each other through at least bonding wires 14, 14, 14, and 14, and the wall portion 62 of the three-dimensional structure (mounting substrate) 6 in the light-emitting device 10 is bonded to each bonding member. Since the notch 63 through which the wire 14 passes is formed, the through-hole wiring 24 (see FIG. 4) as in the conventional example described with reference to FIGS. 4 to 6 is provided in the base substrate 61 of the light emitting device 10. There is no need to reduce the cost by simplifying the structure of the light emitting device 10 including the light detecting element 4 that detects a part of the light emitted from the LED chip 1. It is. Further, in the LED module of the present embodiment, the external connection electrodes 27a, 27b, 27c, 27d and the heat dissipation pads as in the conventional example are formed on the other surface side of the base substrate 20 which is the base substrate portion 61 of the light emitting device 10. It is not necessary to provide the insulating film 23 that electrically insulates the portion 28, the through-hole wiring 24, the thermal via 26, and the like, and the entire other surface of the base substrate portion 61 can be bonded to the metal base printed wiring board 70. Thus, the heat generated in the LED chip 1 can be efficiently dissipated over a wide range through the base substrate portion 61 and the metal base printed wiring board 70, so that the temperature rise of the LED chip 1 can be suppressed.

なお、上記各実施形態では、３次元構造体６におけるベース基板部６１の基礎となる半導体基板としてシリコン基板２０ａを用いているが、半導体基板の材料はＳｉに限らず、例えば、ＳｉＣなどを採用してもよく、特にベース基板部６１の基礎となる半導体基板としてＳｉＣ基板を採用すれば、ＬＥＤチップ１で発生した熱をより効率的に放熱させることが可能となり、ＬＥＤチップ１のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れ、しかも、ＬＥＤチップ１とベース基板部６１の上記他表面との間の熱抵抗を、より小さくすることができる。   In each of the embodiments described above, the silicon substrate 20a is used as the semiconductor substrate serving as the basis of the base substrate portion 61 in the three-dimensional structure 6, but the material of the semiconductor substrate is not limited to Si, and, for example, SiC or the like is adopted. In particular, if a SiC substrate is employed as the semiconductor substrate serving as the basis of the base substrate portion 61, the heat generated in the LED chip 1 can be radiated more efficiently, and the junction temperature of the LED chip 1 can be reduced. Since the temperature rise can be suppressed, the input power can be increased, the light output can be increased, and the thermal resistance between the LED chip 1 and the other surface of the base substrate portion 61 can be further reduced. .

１ ＬＥＤチップ
４ 光検出素子
６ ３次元構造体
８ レンズ状封止部
１０ 発光装置
１２ａ，１２ｂ 電極
１４ ボンディングワイヤ
２０ａ シリコン基板（半導体基板）
３０ａ シリコン基板（半導体基板）
３７ｃ，３７ｄ 導体パターン
４０ａ シリコン基板（半導体基板）
６１ ベース基板部
６２ 壁部
６３ 切欠部
７０ 金属ベースプリント配線板
７３ａ，７３ｂ，７３ｃ，７３ｄ 導体パターン
７４ 導体パターン DESCRIPTION OF SYMBOLS 1 LED chip 4 Photodetection element 6 Three-dimensional structure 8 Lens-shaped sealing part 10 Light-emitting device 12a, 12b Electrode 14 Bonding wire 20a Silicon substrate (semiconductor substrate)
30a Silicon substrate (semiconductor substrate)
37c, 37d Conductor pattern 40a Silicon substrate (semiconductor substrate)
61 Base board part 62 Wall part 63 Notch part 70 Metal base printed wiring board 73a, 73b, 73c, 73d Conductor pattern 74 Conductor pattern

Claims (2)

ＬＥＤチップおよび当該ＬＥＤチップから放射される光の一部を検出する光検出素子を有する発光装置と、前記発光装置が実装された金属ベースプリント配線板とを備え、前記発光装置は、前記ＬＥＤチップが一表面側に搭載されるベース基板部と、当該ベース基板部から突設され前記ＬＥＤチップを囲むとともに前記光検出素子が形成された壁部とを有する３次元構造体が、前記ベース基板部と第１の開口窓が形成された配光用基板と第２の開口窓が形成された光検出素子形成基板とで構成され、前記配光用基板と前記光検出素子形成基板とで前記壁部が構成され、前記配光用基板は、前記第１の開口窓の開口面積が前記ベース基板部から離れるにつれて徐々に大きくなっており、前記ＬＥＤチップから放射された光を前方へ反射するミラーを構成しており、前記光検出素子形成基板は、前記光検出素子の受光部、各電極が前記ベース基板部との対向面側に設けられており、前記金属ベースプリント配線板は、前記発光装置の前記ベース基板部の他表面が接合される接合領域の周囲に、前記発光装置の前記ＬＥＤチップの各電極および前記光検出素子の各電極それぞれに対応付けられた複数の導体パターンを有し、前記発光装置と前記金属ベースプリント配線板とは、前記ＬＥＤチップの各電極および前記光検出素子の各電極それぞれと前記金属ベースプリント配線板の対応付けられた導体パターンとが少なくともボンディングワイヤを介して電気的に接続されてなり、前記発光装置の壁部には、ボンディングワイヤを通す切欠部が形成されてなり、前記配光用基板は、前記ベース基板部側とは反対の表面側に前記光検出素子の各電極それぞれと電気的に接続される導体パターンが形成され、前記第１の開口窓に連通する切欠部が形成されており、前記光検出素子形成基板は、前記第２の開口窓に連通する切欠部が形成されており、前記発光装置は、前記配光用基板の前記導体パターンそれぞれの一部が、前記光検出素子形成基板の前記切欠部を通して前記ボンディングワイヤが接続されるパッドを構成していることを特徴とするＬＥＤモジュール。 Comprising a light emitting device having a light detecting element for detecting a portion of the light emitted from the LED chip and the LED chip, a metal base printed wiring board in which the light - emitting device is mounted, the light - emitting device, the L ED chip and the base substrate portion is mounted on one surface, three-dimensional structure having a the base substrate portion protruding from the L ED tip surrounding the When the light detection element is formed on together wall A light distribution substrate on which the base substrate portion and the first opening window are formed, and a light detection element formation substrate on which the second opening window is formed, the light distribution substrate and the light detection The wall portion is constituted by an element formation substrate, and the light distribution substrate is gradually increased as the opening area of the first opening window is away from the base substrate portion, and is emitted from the LED chip. Mi that reflects light forward Constitute the over, the light detection element forming substrate, the light receiving portion of the light detection element, and each electrode is provided on a surface facing said base substrate, said metals base printed circuit board, around the junction region other surface of said base over scan substrate portion are joined in the light - emitting device, associating to each of the electrodes of the L ED each electrode and the light detection element chip of the light - emitting device a plurality of conductive patterns which are, with the light - emitting device and the metals-based printed circuit board, said L ED tip of the metals based printed circuit with each respective electrodes of each electrode and the light detection element it is electrically connected to the corresponding Tagged conductor pattern of the plate via the at least bonding wire, the wall portion of the light - emitting device is made are notch through which the bonding wire is formed, for the light distribution The substrate is A conductive pattern electrically connected to each of the electrodes of the photodetecting element is formed on the surface side opposite to the substrate side, and a notch communicating with the first opening window is formed, The light detection element forming substrate is formed with a notch communicating with the second opening window, and the light emitting device is configured such that a part of each of the conductor patterns of the light distribution substrate is the light detection element forming substrate. An LED module comprising a pad to which the bonding wire is connected through the notch . 前記金属ベースプリント配線板における前記発光装置の接合面側において前記発光装置および前記各ボンディングワイヤを封止し前記発光装置から放射されたる光の配光を制御するレンズ状封止部を備えることを特徴とする請求項１記載のＬＥＤモジュール。   And a lens-shaped sealing portion that seals the light emitting device and the bonding wires on the metal base printed wiring board on a bonding surface side of the light emitting device and controls light distribution of light emitted from the light emitting device. The LED module according to claim 1.
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