WO2014115202A1 - Package for light emitting elements and light emitting device using same - Google Patents

Package for light emitting elements and light emitting device using same Download PDF

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Publication number
WO2014115202A1
WO2014115202A1 PCT/JP2013/006148 JP2013006148W WO2014115202A1 WO 2014115202 A1 WO2014115202 A1 WO 2014115202A1 JP 2013006148 W JP2013006148 W JP 2013006148W WO 2014115202 A1 WO2014115202 A1 WO 2014115202A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
reflector
mounting substrate
emitting element
package
Prior art date
Application number
PCT/JP2013/006148
Other languages
French (fr)
Japanese (ja)
Inventor
真太郎 林
耕一朗 松岡
拓巳 井場
福島 博司
Original Assignee
パナソニック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Publication of WO2014115202A1 publication Critical patent/WO2014115202A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Definitions

  • the present invention relates to a light emitting device package and a light emitting device using the same.
  • Japanese Patent No. 4454237 As a light emitting element package for housing a light emitting element, for example, a light emitting element housing package having a configuration shown in FIG. 8 has been proposed (see Japanese Patent No. 4454237). Hereinafter, Japanese Patent No. 4454237 is referred to as Document 1.
  • the substrate 101 is made of ceramics.
  • the base 101 has a mounting portion 101 a for mounting the light emitting element 106.
  • a metallized wiring (not shown) is formed on the base 101, and a part of the metallized wiring is exposed on the lower surface of the base 101.
  • the frame body 102 is made of a metal such as Al, Ag, or Au, which has a high reflectance with respect to light in the ultraviolet light region to the visible light region, ceramics, or resin.
  • a through-hole 102a is formed at the center of the frame body 102. The through-hole 102a expands outward as the inner peripheral surface moves upward.
  • a reflective layer made of a metal such as Al, Ag, Au, Pt, or Cu is formed on the surface of the frame body 102.
  • the frame body 102 has a convex portion 105 a formed on the entire inner periphery of the lower surface of the frame body 102, and the convex portion 105 a is joined to the upper surface of the base body 101. Accordingly, the frame body 102 has a gap between the outer peripheral portion of the lower surface and the upper surface of the base body 101 over the entire periphery.
  • the lid 103 is made of a translucent material such as glass, sapphire, quartz, or resin.
  • Document 1 describes that the function of an optical lens may be added by making the lid 103 into a lens shape.
  • Document 1 also describes a light emitting device that includes the light emitting element storage package described above and the light emitting element 106 mounted on the mounting portion 101a.
  • a light emitting element package for example, a light emitting element accommodation package 210 having a configuration shown in FIG. 9 has been proposed (see International Publication No. 2006/013899).
  • the light emitting element storage package 210 includes a ceramic insulating substrate 211 and a reflector frame 212 joined to the outer peripheral upper surface of the insulating substrate 211.
  • the reflector frame 212 is made of the same composition or different material as the insulating substrate 211 and is integrated with the upper surface of the insulating substrate 211 by sintering.
  • the reflector frame 212 is made of white nitride ceramics.
  • a supply wiring pattern layer 215 for electrical connection to a circuit board or the like is deposited on the lower surface of the insulating substrate 211.
  • a light emitting element connecting wiring pattern layer 214 is formed on the upper surface of the insulating substrate 211.
  • wiring through holes 216 are formed in the insulating substrate 211 so as to penetrate through the upper and lower surfaces of the insulating substrate 211.
  • the wiring through-hole 216 is filled with a conductive member 217 to form a conductive portion 222.
  • the light emitting element connection wiring pattern layer 214 and the supply wiring pattern layer 215 are electrically connected to each other through the conductive portion 222.
  • the light emitting element storage package 210 is configured such that the light emitting element 206 is electrically connected to the light emitting element connecting wiring pattern layer 214 via the bump electrode 220.
  • a light emitting device 300 having a configuration shown in FIG. 10 has been proposed (see Japanese Patent Publication No. 2007-88081).
  • the light emitting device 300 includes an LED chip 306, a mounting substrate 301, a submount member 313, a bonding wire 317, a reflector 302, a sealing portion 305, a lens 307, an air layer 309, and a color conversion member 308. It has.
  • the reflector frame 212 is made of the same composition or different material as the insulating substrate 211, and is integrated with the upper surface of the insulating substrate 211 by sintering. For this reason, in the light emitting element storage package 210, a metal having higher reflectivity cannot be adopted as the material of the reflector frame 212, and it is difficult to improve the light extraction efficiency.
  • the bonding wire 317 is provided between the reflector 302 and the LED chip 306. Therefore, in the light emitting device 300, the reduction of the opening area of the reflector 302 is limited, and the amount of light that does not directly enter the reflector 302 out of the light emitted from the side surface of the LED chip 306 increases, and the light extraction efficiency decreases. There is a concern.
  • an object of the present invention is to provide a light emitting element package capable of improving reliability and improving light extraction efficiency, and a light emitting device using the same.
  • the light emitting element package of the present invention includes a mounting substrate on which the light emitting element is mounted, and a reflector disposed on one surface side of the mounting substrate so as to surround the mounting region of the light emitting element.
  • the light emitting device package includes a lid that covers the reflector on the one surface side of the mounting substrate and is bonded to the mounting substrate.
  • the lid includes a lid body and a light extraction window member joined to the lid body so as to close a window hole formed in front of the mounting region in the lid body.
  • the mounting board includes a metal plate, an electric insulating layer formed on the one surface side of the metal plate, a hole formed in the electric insulating layer and exposing a part of the one surface of the metal plate, And a first conductor layer for feeding formed on the electrical insulating layer.
  • the mounting board includes a submount member disposed inside the hole and bonded to the one surface side of the metal plate.
  • the submount member includes a base material having a thermal conductivity higher than that of the electrical insulating layer and having an electrical insulation property, and a second power supply formed on the surface side of the base material opposite to the metal plate side.
  • a conductor layer is formed across the projection area of the lid and the outside of the projection area on the mounting substrate.
  • the first conductor layer has a first terminal portion for internal connection in the projection region of the reflector, and has a second terminal portion for external connection outside the lid.
  • the second conductor layer has a wiring portion formed across the mounting region and the projection region of the reflector on the mounting substrate.
  • the wiring part and the first terminal part are electrically connected via a wire.
  • the reflector is characterized in that a recess for accommodating the wire is formed on a surface facing the mounting substrate.
  • the light emitting device package of the present invention has an effect that the reliability can be improved and the light extraction efficiency can be improved.
  • the recess is separated from both the outer peripheral end and the inner peripheral end of the surface of the reflector on the mounting substrate side.
  • the reflector is in contact with the mounting substrate without being bonded to the mounting substrate in a region overlapping the submount member, and is bonded to the mounting substrate in a region overlapping with the electrical insulating layer. preferable.
  • the window material is a lens
  • the reflector has a convex portion that surrounds the lens and positions the lens on a surface opposite to the mounting substrate side.
  • the convex portion is annular, and the opening area gradually increases as the distance from the mounting substrate increases.
  • the lid body includes a cylinder and a first flange protruding outward from a first end which is an end of the cylinder close to the mounting substrate.
  • the lid body includes a second flange that protrudes inward from a second end portion that is an end portion of the cylindrical body that is far from the mounting substrate.
  • the inner peripheral surface of the second flange is the inner peripheral surface of the window hole.
  • the lens includes a lens portion and a base portion protruding outward from the outer peripheral portion of the lens portion over the entire circumference. In the lens, it is preferable that the lens portion is disposed in the window hole and the base portion is bonded to the second flange.
  • the light-emitting device of the present invention includes the light-emitting element package and the light-emitting element. Thereby, the light emitting device of the present invention has an effect that it is possible to improve the reliability and to improve the light extraction efficiency.
  • FIG. 1 is a schematic cross-sectional view of a light emitting device including the light emitting element package of the embodiment.
  • FIG. 2 is a schematic perspective view of a light emitting device including the light emitting element package of the embodiment.
  • FIG. 3 is a schematic plan view of a light emitting device including the light emitting element package of the embodiment.
  • FIG. 4 is a schematic cross-sectional view of a first modification of the light emitting device including the light emitting element package of the embodiment.
  • FIG. 5 is a schematic cross-sectional view of a second modification of the light emitting device including the light emitting element package of the embodiment.
  • FIG. 6 is a schematic cross-sectional view of a third modification of the light emitting device including the light emitting element package of the embodiment.
  • FIG. 7 is a schematic cross-sectional view of a fourth modification of the light emitting device including the light emitting element package of the embodiment.
  • FIG. 8 is a cross-sectional view of a conventional light emitting element storage package.
  • FIG. 9 is a cross-sectional view of another conventional light emitting element storage package.
  • FIG. 10 is a cross-sectional view of another conventional light emitting device.
  • the light emitting device package 10 of the present embodiment will be described with reference to FIGS.
  • the light emitting element package 10 is also referred to as a package 10.
  • the package 10 includes a mounting substrate 1, a reflector 2, and a lid 3.
  • a light emitting device using the package 10 includes the package 10 and the light emitting element 6 housed in the package 10.
  • the light emitting element 6 is a solid light emitting element and employs an LED chip.
  • the present invention is not limited to this, and a semiconductor laser chip can also be employed.
  • the mounting substrate 1 is a substrate on which the light emitting element 6 is mounted. “Mounting” is a concept including arranging and mechanically connecting the light emitting elements 6 and electrically connecting them. For this reason, the mounting substrate 1 has a function of mechanically holding the light emitting element 6 and a function of forming a wiring for supplying power to the light emitting element 6.
  • the mounting substrate 1 is configured so that a plurality of light emitting elements 6 can be mounted. For example, six light emitting elements 6 can be mounted on the mounting substrate 1.
  • the mounting substrate 1 does not particularly limit the number of light-emitting elements 6 that can be mounted.
  • the mounting substrate 1 may be one on which a plurality of light emitting elements 6 other than six are mounted.
  • the mounting substrate 1 includes one surface and another surface facing the one surface. Hereinafter, one surface of the mounting substrate 1 is referred to as a first surface 1aa.
  • the reflector 2 is disposed on the first surface 1aa side of the mounting substrate 1 so as to surround the mounting region 1a of the light emitting element 6 on the mounting substrate 1.
  • a region surrounded by the inner peripheral line of the reflector in the plan view constitutes the mounting region 1 a. That is, the mounting area 1 a is defined by the reflector 2.
  • the lid 3 covers the reflector 2 on the first surface 1aa side of the mounting substrate 1 and is joined to the mounting substrate 1.
  • the package 10 can improve the strength against the load from the upper surface side of the lid 3 and can improve the reliability.
  • the lid 3 includes a lid main body 31 and a light extraction window member 32 joined so as to close a window hole 31d formed in front of the mounting region 1a in the lid main body 31.
  • the mounting substrate 1 includes a metal plate 11.
  • the metal plate 11 includes a front surface 11aa and a back surface 11ab facing the front surface 11aa.
  • the mounting substrate 1 includes an electric insulating layer 12a formed on the surface 11aa side of the metal plate 11, and a hole 14 formed in the electric insulating layer 12a and exposing a part of the surface 11aa of the metal plate 11.
  • the electrical insulating layer 12a is also referred to as a first electrical insulating layer 12a.
  • the mounting substrate 1 includes a first power supply conductor layer 12b formed on the first electrical insulating layer 12a and a submount member 13 disposed inside the hole 14 and joined to the surface 11aa side of the metal plate 11. With.
  • the submount member 13 has a heat conductivity higher than that of the first electric insulating layer 12a and has an electric insulating property, and a power supply formed on the surface of the substrate 13a opposite to the metal plate 11 side. Second conductor layer 13b.
  • the first conductor layer 12b is formed across the projection area of the lid 3 on the mounting substrate 1 and the outside of the projection area. Two first conductor layers 12b can be provided.
  • the first conductor layer 12 b has a first terminal portion 12 ba for internal connection in the projection region of the reflector 2, and has a second terminal portion 12 bb for external connection outside the lid 3.
  • one of the two second terminal portions 12bb constitutes an external connection terminal on the high potential side, and the other constitutes an external connection terminal on the low potential side.
  • the second conductor layer 13b has a wiring portion 13bb formed across the mounting region 1a and the projection region of the reflector 2 on the mounting substrate 1. Two wiring portions 13bb can be provided.
  • the wiring portion 13 bb and the first terminal portion 12 ba arranged adjacent to each other are electrically connected via the wire 17.
  • the mounting substrate 1 includes two wires 17.
  • wiring is formed by the first conductor layer 12b, the second conductor layer 13b, and each wire 17.
  • the reflector 2 has a recess 2b for accommodating the wire 17 on the surface facing the mounting substrate 1.
  • the package 10 can prevent the light emitted from the side surface of the light emitting element 6 from being blocked by the wire 17.
  • the package 10 can reduce the amount of light that is not directly incident on the reflector 2 out of the light emitted from the side surface of the light emitting element 6. Therefore, the package 10 can improve the light extraction efficiency.
  • an ultraviolet LED chip that emits ultraviolet rays (ultraviolet light) can be employed.
  • the ultraviolet LED chip is, for example, an LED chip that employs an AlGaN-based material as a material of the light emitting layer and can emit light in an ultraviolet wavelength region of an emission wavelength of 210 nm to 360 nm.
  • the ultraviolet LED chip has a configuration in which, for example, an AlN layer, an n-type nitride semiconductor layer, a light emitting layer, an electron block layer, a p-type nitride semiconductor layer, and a p-type contact layer are stacked on one surface side of a sapphire substrate. be able to.
  • the ultraviolet LED chip includes a first electrode electrically connected to the n-type nitride semiconductor layer and a second electrode electrically connected to the p-type nitride semiconductor layer through the p-type contact layer.
  • An LED chip can be adopted.
  • the n-type nitride semiconductor layer is composed of, for example, an n-type Al x Ga 1-x N (0 ⁇ x ⁇ 1) layer.
  • the light emitting layer has a quantum well structure made of an AlGaN-based material.
  • the quantum well structure includes a barrier layer and a well layer.
  • the quantum well structure may be a multiple quantum well structure or a single quantum well structure.
  • the light emitting layer has an Al composition of the well layer set so as to emit ultraviolet light having a desired light emitting wavelength.
  • the emission wavelength (emission peak wavelength) can be set to an arbitrary emission wavelength in the range of 210 to 360 nm by changing the Al composition ratio.
  • the Al composition ratio of the light emitting layer may be set to 0.50.
  • the ultraviolet LED chip may be formed with a double heterostructure.
  • the ultraviolet LED chip can have a double hetero structure by using a light emitting layer as a single layer structure and using a light emitting layer and layers on both sides in the thickness direction of the light emitting layer.
  • an n-type nitride semiconductor layer and a p-type nitride semiconductor layer can be used as layers on both sides in the thickness direction of the light emitting layer.
  • the structure of the ultraviolet LED chip is not particularly limited.
  • the LED chip is not limited to the ultraviolet LED chip.
  • a purple LED chip that emits purple light, a blue LED chip that emits blue light, a green LED chip that emits green light, a red LED chip that emits red light, or the like may be employed.
  • the material of the light emitting layer of the LED chip and the light emission peak wavelength are not particularly limited.
  • a light emitting device including a plurality of light emitting elements 6 may include a plurality of types of LED chips having different emission peak wavelengths.
  • the LED chip has a chip size of 0.39 mm ⁇ (0.39 mm ⁇ 0.39 mm).
  • the chip size of the LED chip is not particularly limited.
  • the chip size of the LED chip can be, for example, 0.3 mm ⁇ , 0.45 mm ⁇ , or 1 mm ⁇ .
  • the outer peripheral shape of the LED chip is not limited to a square shape, and may be, for example, a rectangular shape or a regular hexagonal shape.
  • the LED chip has a thickness of about 0.16 mm, but is not particularly limited.
  • each of the first electrode and the second electrode is arranged on the same surface side.
  • each of the first electrode and the second electrode can be electrically connected to the pair of second conductor layers 13 b via the bumps 7.
  • the second conductor layer 13b is formed in a predetermined pattern shape so that the portion to which the first electrode is connected and the portion to which the second electrode is connected are electrically insulated.
  • the light emitting element 6 is not limited to the LED chip in which the first electrode and the second electrode are provided on one surface side in the thickness direction.
  • the first electrode is provided on one surface side in the thickness direction and the second electrode is provided on the other surface side.
  • the LED chip provided with may be used.
  • one of the first electrode and the second electrode is die-bonded to the second conductor layer 13b via a conductive bonding material, and the other is electrically connected to the second conductor layer 13b via a wire. It should be connected to.
  • the light-emitting element 6 is not limited to the LED chip, and a semiconductor laser chip may be employed.
  • the outer peripheral shape of the metal plate 11 of the mounting substrate 1 is a rectangular shape. Note that the rectangular shape includes the concept of a rectangle and a square.
  • the outer peripheral shape of the metal plate 11 is not limited to a rectangular shape, and may be, for example, a circular shape or a polygonal shape other than a rectangular shape.
  • the material of the metal plate 11 As the material of the metal plate 11, a metal having high thermal conductivity is preferable. For this reason, copper is adopted as the material of the metal plate 11.
  • the material of the metal plate 11 is not limited to copper, and for example, aluminum, aluminum alloy, silver, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, or the like can be employed. When the copper alloy is used as the material of the metal plate 11, for example, 42 alloy or the like can be adopted.
  • the metal plate 11 may be provided with a surface treatment layer (not shown) on the surface of a base material made of the above-described material. As the surface treatment layer, for example, a single layer film such as an Au film, an Al film, or an Ag film can be employed.
  • the surface treatment layer for example, a laminated film of Ni film, Pd film and Au film, a laminated film of Ni film and Au film, a laminated film of Ag film, Pd film and AuAg alloy film should be adopted. Can do.
  • the surface treatment layer is preferably composed of a plating layer or the like. In short, the surface treatment layer is preferably formed by a plating method, but is not limited to one formed by a plating method.
  • the first electrical insulating layer 12a is formed on the surface 11aa of the metal plate 11, and a hole 14 is formed to expose the central portion of the surface 11aa of the metal plate 11.
  • the opening shape of the hole 14 is rectangular.
  • the opening shape of the hole 14 is preferably similar to the outer peripheral shape of the submount member 13.
  • the opening shape of the hole 14 is not particularly limited, and may be appropriately designed based on the outer peripheral shape of the submount member 13.
  • an alignment mark (not shown) is preferably formed on the surface 11aa of the metal plate 11 in order to increase the positioning accuracy of the submount member 13.
  • the material of the first conductor layer 12b for example, copper, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, aluminum, aluminum alloy, or the like can be used.
  • the material of the first conductor layer 12b when a copper alloy is used, for example, 42 alloy or the like can be adopted.
  • the first conductor layer 12b can be formed using, for example, a metal foil, a metal film, or the like.
  • the first conductor layer 12b preferably has a laminated structure of a Cu layer, a Ni layer, and an Au layer, and the outermost surface side is preferably an Au layer.
  • each 1st conductor layer 12b can be formed in the outer periphery shape of a slightly smaller area than the half of the area in the outer periphery shape of the 1st electric insulation layer 12a.
  • the first electrical insulating layer 12a and the first conductor layer 12b can be formed using, for example, a printed wiring board.
  • the first electrical insulating layer 12a can be composed of an insulating base material of a printed wiring board and a fixing sheet that fixes the insulating base material and the metal plate 11 together.
  • the first electrical insulating layer 12 a may have a rectangular shape whose outer peripheral shape matches the outer peripheral shape of the metal plate 11.
  • substrate etc. are employable, for example.
  • the fixing sheet for example, a polyolefin-based fixing sheet can be employed.
  • the mounting substrate 1 may be formed by using the metal base printed wiring board, the metal plate 11, the first electrical insulating layer 12a, and the first conductor layer 12b.
  • the metal plate 11, the first electrical insulating layer 12a, and the first conductor layer 12b of the mounting substrate 1 can be formed of the metal plate, the insulating layer, and the copper foil of the metal base printed wiring board. That is, in the metal-based printed wiring board, the metal plate becomes the metal plate 11 of the mounting substrate 1, the insulating layer becomes the first electrical insulating layer 12 a of the mounting substrate 1, and the copper foil becomes the first conductor layer 12 b of the mounting substrate 1. .
  • the mounting substrate 1 has a protective layer 16 laminated so as to cover the first conductor layer 12b excluding the first terminal portion 12ba and the second terminal portion 12bb.
  • the protective layer 16 also covers a portion of the first electrical insulating layer 12a where the first conductor layer 12b is not formed.
  • a white resist layer can be employed.
  • a white resist made of a resin containing a white pigment such as barium sulfate (BaSO 4 ) or titanium dioxide (TiO 2 ) can be employed.
  • a silicone resin or the like can be adopted as a resin material containing a white pigment.
  • a white resist material “ASA COLOR RESIST INK” made by Asahi Rubber Co., Ltd. can be used.
  • the white resist layer can be formed by, for example, a coating method.
  • the package 10 when the protective layer 16 is made of a white resist layer, the light incident on the mounting substrate 1 from the light emitting element 6 is easily reflected on the surface of the protective layer 16. As a result, the package 10 can suppress the light emitted from the light emitting element 6 from being absorbed by the mounting substrate 1, and can improve the light output by improving the light extraction efficiency to the outside. It becomes.
  • a first opening 16a that exposes the first terminal portion 12ba of the first conductor layer 12b is formed in the vicinity of the hole 14 of the first electric insulating layer 12a, and the first electric insulating layer 12a is formed.
  • a second opening 16b that exposes the second terminal portion 12bb of the first conductor layer 12b is formed in the peripheral portion.
  • the opening shape of the first opening 16a is rectangular.
  • the opening shape of the first opening 16a is not limited to a rectangular shape, and may be, for example, a circular shape.
  • the opening shape of the second opening portion 16b is rectangular.
  • the opening shape of the second opening portion 16b is not limited to a rectangular shape, and may be a circular shape, for example.
  • the light emitting element 6 is mounted on the metal plate 11 via the submount member 13.
  • a heat transfer path for transferring heat to the submount member 13 and the metal plate 11 without the first electrical insulating layer 12a is formed as a heat transfer path of the heat generated in the light emitting element 6. Therefore, the package 10 and the light emitting device can improve heat dissipation.
  • the base material 13a of the submount member 13 is formed in a plate shape.
  • the base material 13a has a rectangular shape in plan view, but is not limited thereto, and may be, for example, a circular shape or a polygonal shape other than a rectangular shape.
  • the planar size of the submount member 13 is set larger than the size in which a plurality of light emitting elements 6 can be arranged and the plurality of light emitting elements 6 are combined.
  • the planar size of the submount member 13 is 4.3 mm ⁇ 3 mm, but is an example and is not particularly limited.
  • the material of the base material 13 a As the material of the base material 13 a, a material having high thermal conductivity and a linear expansion coefficient that is between the linear expansion coefficient of the metal plate 11 and the linear expansion coefficient of the light emitting element 6 is preferable. As a result, the light emitting device can suppress the occurrence of cracks due to thermal stress at the joint between the light emitting element 6 and the submount member 13.
  • the bumps 7 serve as joints between the light emitting element 6 and the submount member 13.
  • AlN As the material of the base material 13a, AlN is adopted.
  • the second conductor layer 13b of the submount member 13 is formed in a predetermined pattern shape so that a plurality of light emitting elements 6 can be connected in series.
  • the second conductor layer 13b is formed in a predetermined pattern shape so that the plurality of light emitting elements 6 can be arranged on the circumference of one virtual circle at substantially equal intervals.
  • the pattern of the second conductor layer 13b is not particularly limited.
  • the second conductor layer 13b may be configured such that a plurality of light-emitting elements 6 can be connected in parallel, or may be configured so that series-parallel connection is possible.
  • the light emitting device may have a configuration in which a plurality of light emitting elements 6 are connected in series, a structure in which a plurality of light emitting elements 6 are connected in parallel, or a plurality of light emitting elements 6. You may have the structure by which the light emitting element 6 was connected in series and parallel.
  • the submount member 13 is joined to the metal plate 11 via the first joint portion 15.
  • lead free solders such as AuSn and SnAgCu, are preferable, for example.
  • AuSn is adopted as the material of the first joint portion 15, it is preferable to perform a pretreatment in which a metal layer made of Au or Ag is previously formed on the joint surface of the surface 11 aa of the metal plate 11.
  • the first joint portion 15 may be formed from a conductive paste.
  • the conductive paste for example, a silver paste, a gold paste, a copper paste, or the like can be employed.
  • the thickness dimension of the submount member 13 is set so that the surface of the second conductor layer 13b is farther from the metal plate 11 than the surface of the protective layer 16. Accordingly, the package 10 suppresses the light emitted from the light emitting element 6 from the side from being absorbed by the first electric insulating layer 12a through the inner peripheral surface of the hole 14 of the first electric insulating layer 12a. It becomes possible.
  • the thickness dimension of the submount member 13 is set to about 0.3 mm, but is not particularly limited. However, since the thermal resistance in the thickness direction increases as the thickness dimension of the submount member 13 increases, the package 10 is preferably set so as not to be too large.
  • the material of the second conductor layer 13b for example, Au, Ag or the like can be employed.
  • the material of the second conductor layer 13 b is preferably the same as the material of the bump 7.
  • the material of the second conductor layer 13b is also preferably Au.
  • the second conductor layer 13b is not limited to a single layer film, and may be a multilayer film. In this case, it is preferable that the outermost layer is formed of the same material as that of the bump 7.
  • the material of the base material 13a is not limited to AlN, and for example, Si, CuW, composite SiC, or the like may be employed.
  • Si, CuW, or the like that is not an insulator is adopted as the material of the base material 13a, an insulating film is provided on the surface of the base material made of the material of the base material 13a, and the second conductor layer 13b is patterned on the insulating film. do it.
  • the submount member 13 may form a reflection film that reflects light emitted from the light emitting element 6 in a region where the second conductor layer 13b is not formed on the surface of the base material 13a. Thereby, the submount member 13 can further suppress the light emitted from the side surface of the light emitting element 6 from being absorbed by the submount member 13, and can improve the light extraction efficiency to the outside. It becomes possible.
  • the reflective film in the submount member 13 can be composed of, for example, a laminated film of a Ni film and an Al film. The material of the reflective film may be appropriately selected according to the emission peak wavelength of the light emitting element 6.
  • the submount member 13 may include an insulating layer made of an electrically insulating material in a region where the reflector 2 may come into contact. Thereby, when the reflector 2 is formed of metal or the like, the second conductor layer 13b and the reflector 2 can be electrically insulated.
  • the electrically insulating material of the insulating layer for example, silicon oxide can be employed.
  • the light emitting element 6 and the submount member 13 are, for example, SnPb, AuSn, SnAgCu. Bonding can be performed using solder such as silver or conductive paste such as silver paste.
  • the light emitting element 6 and the second conductor layer 13b of the submount member 13 are preferably joined using a lead-free solder such as AuSn or SnAgCu.
  • the second conductor layer 13b is preferably composed of a metal layer such as an Au layer or an Ag layer.
  • the second conductor layer 13b may be formed using, for example, a vapor deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
  • the submount member 13 is a line between the light emitting element 6 and the metal plate 11. It has a function of relieving stress acting on the light emitting element 6 due to the difference in expansion coefficient.
  • the submount member 13 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the light emitting element 6 to a range wider than the chip size of the light emitting element 6 in the metal plate 11. Therefore, the light emitting device can efficiently dissipate the heat generated in the light emitting element 6 to the outside through the submount member 13 and the metal plate 11.
  • the wire 17 for example, Au wire is adopted.
  • the wire 17 is not limited to the Au wire but may be an Al wire.
  • As the Au wire for example, a thin wire having a wire diameter of about 18 ⁇ m to 25 ⁇ m can be used.
  • As the Al wire for example, a thin wire having a wire diameter of 25 ⁇ m to 200 ⁇ m can be adopted.
  • the depth dimension of the recess 2 b is set so that the wire 17 does not contact. Thereby, the package 10 can suppress that the wire 17 touches the reflector 2 and the wire 17 is disconnected.
  • the package 10 can electrically insulate the wire 17 and the reflector 2 from each other.
  • the height of the wire 17 tends to be higher than when the Au wire is used, so the depth dimension of the recess 2 b of the reflector 2 is It is preferable to set a larger value.
  • the package 10 may have a depth of the recess 2b of about 0.2 mm, for example, but when the wire 17 is an Al wire, the depth of the recess 2b is 1 mm.
  • the wire 17 is not limited to the Au wire or the Al wire, but may be an Al—Si wire, a Cu wire, or the like.
  • the package 10 can be provided with a through hole 19 penetrating in the thickness direction of the mounting board 1 in the mounting board 1 so that the package 10 can be attached to another member such as a circuit board.
  • the opening shape of the through hole 19 is circular.
  • the opening shape of the through hole 19 is not limited to the circular shape, and may be various shapes.
  • the mounting substrate 1 has a rectangular shape in plan view, and a second terminal portion 12 bb is provided in the vicinity of each of two opposing corners of the four corners of the mounting substrate 1.
  • a through hole 19 is provided in the vicinity of each of the two corners.
  • the package 10 can also be attached to another member such as a circuit board by a screw or the like.
  • a screw whose outer diameter is larger than the inner diameter of the through hole 19 and whose outer diameter is smaller than the inner diameter of the through hole 19 may be used.
  • a metal screw, a resin screw, or the like can be used.
  • the package 10 is subjected to stress applied to the joint portion between the second terminal portion 12bb and the electric wire, stress applied due to the screw, and the like. As a result, it is possible to prevent the mounting substrate 1 from being warped.
  • the reflector 2 is formed in a frame shape in which the opening area gradually increases as the distance from the mounting substrate 1 increases.
  • the reflector 2 has a function of reflecting light emitted from the light emitting element 6 toward the window member 32.
  • Aluminum is used as the material of the reflector 2.
  • an A1003-based pure aluminum plate is punched and subjected to press molding processing simultaneously or sequentially, and then burrs are removed and at the same time, the surface roughness is reduced to increase the reflectivity. Polishing may be performed.
  • the reflectance of the reflecting surface 2a formed from the inner surface of the reflector 2 is, for example, about 97% for 265 nm ultraviolet rays.
  • the thickness of the pure aluminum plate is set to about 0.6 mm, but is not particularly limited.
  • the angle formed between the surface of the reflector 2 on the mounting substrate 1 side and the reflecting surface 2a of the reflector 2 is set to 55 °, but is only an example and is not particularly limited.
  • the method for forming the reflector 2 is not particularly limited.
  • the material of the reflector 2 is not limited to aluminum, but may be, for example, a resin such as PBT (polybutylene terephthalate). In this case, a reflective film made of a metal such as aluminum is provided on the inner surface of the frame-shaped resin molded product. Is preferred.
  • the recess 2b of the reflector 2 is preferably separated from both the outer peripheral end and the inner peripheral end on the surface of the reflector 2 on the mounting substrate 1 side. That is, the recess 2b of the reflector 2 is formed avoiding the outer peripheral portion and the inner peripheral portion on the surface of the reflector 2 on the mounting substrate 1 side. Thereby, the reflector 2 can improve rigidity and load resistance. Therefore, the package 10 can further improve the load resistance.
  • the recess 2 b is formed over the entire circumference of the reflector 2. As a result, the package 10 can improve the assemblability of the package 10.
  • One recess 2 b may be provided for each wire 17.
  • the reflector 2 is in contact with the mounting substrate 1 without being joined in the region overlapping the submount member 13, and is joined to the mounting substrate 1 in the region overlapping the first electrical insulating layer 12a. That is, the reflector 2 is not bonded to the mounting substrate 1 at the inner peripheral portion of the surface on the mounting substrate 1 side, but is bonded to the mounting substrate 1 at the outer peripheral portion. Thereby, the package 10 can suppress the occurrence of thermal stress between the reflector 2 and the submount member 13.
  • the reflector 2 and the mounting substrate 1 are bonded via the second bonding portion 4.
  • the 2nd junction part 4 is located in the place where the light from the light emitting element 6 does not reach directly. For this reason, as a material of the 2nd junction part 4, an epoxy resin etc. are employable, for example.
  • the second electrical insulating layer 5 is formed in a region where the recess 2 b is not formed at least in the region overlapping the submount member 13.
  • the second electrical insulating layer 5 can employ a silicone-based coating film, an aluminum oxide film, or the like.
  • the reflector 2 has a convex portion 2d on the surface opposite to the mounting substrate 1 side.
  • the convex portion 2d has a function of surrounding the window member 32 and positioning the window member 32. Thereby, the package 10 can position the window member 32.
  • the protrusion dimension of the convex part 2d is set to 0.2 mm, it is not specifically limited.
  • the convex portion 2d is formed in an annular shape, and it is preferable that the opening area gradually increases as the distance from the mounting substrate 1 increases. Thereby, the package 10 can position the window member 32 more easily and with high accuracy.
  • the convex portion 2d is not limited to an annular shape, and a plurality of convex portions 2d may be provided apart from each other in the outer peripheral direction of the window member 32 so as to surround the window member 32.
  • the lid body 31 of the lid 3 is made of metal.
  • the metal that is the material of the lid body 31 stainless steel is adopted.
  • the lid body 31 can be made of stainless steel, thereby improving heat dissipation, productivity, corrosion resistance, and the like.
  • the lid body 31 may be formed by processing a stainless steel plate by press molding. The thickness of the stainless steel plate is set to about 0.2 mm, but is not particularly limited.
  • the metal that is the material of the lid body 31 is not limited to stainless steel, and for example, Kovar or the like can be used.
  • Kovar is an alloy containing iron and nickel.
  • An example of the component ratio of Kovar is, by weight, iron: 53.5% by weight, nickel: 29% by weight, cobalt: 17% by weight, silicon: 0.2% by weight, manganese: 0.3% by weight. .
  • the component ratio of Kovar is not particularly limited.
  • the lid main body 31 may be one in which an oxide film is formed by oxidizing the surface of a base made of this metal.
  • the lid body 31 is far from the mounting body 1 in the cylindrical body 31a, the first flange 31b projecting outward from the first end that is the end of the cylindrical body 31a closer to the mounting board 1, and the cylindrical body 31a. And a second flange 31c protruding inward from a second end which is a side end.
  • the inner peripheral surface of the second flange 31c is the inner peripheral surface of the window hole 31d.
  • the cylinder 31a has a cylindrical shape. Although the outer diameter of the cylinder 31a is set to 8 mm, it is not limited to this value.
  • the cylindrical body 31a is not limited to a cylindrical shape, and may be a cylindrical shape, for example, a rectangular cylindrical shape.
  • the outer peripheral shape of the first flange 31b is circular.
  • the outer peripheral shape of the first flange 31b is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
  • the inner peripheral shape of the second flange 31c is a circular shape. Therefore, the window hole 31d is a circular hole.
  • the inner diameter of the window hole 31d is set to 3 mm, but is not limited to this value.
  • the inner peripheral shape of the second flange 31c is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
  • the window material 32 is disposed in the lid main body 31.
  • the window member 32 is preferably joined to the second flange 31 c inside the lid body 31.
  • the window member 32 is preferably welded to the second flange 31c so as to close the window hole 31d surrounded by the second flange 31c.
  • the window member 32 and the lid main body 31 may be joined by a separate joining material.
  • the window material 32 preferably has a transmittance with respect to light having a wavelength to be transmitted of 70% or more, and more preferably 80% or more.
  • borosilicate glass having a transmittance of 80% or more for the ultraviolet rays emitted from the light emitting element 6 as the material of the window member 32.
  • borosilicate glass for example, 8337B manufactured by SCHOTT can be adopted.
  • the transmittance of the window member 32 with respect to the ultraviolet light that is the light emitted from the light emitting element 6 can be 80% or more.
  • the lid 3 preferably has a smaller difference in linear expansion coefficient between the metal that is the material of the lid body 31 and the borosilicate glass that is the material of the window material 32. Thereby, the lid 3 can reduce the stress generated near the boundary between the window material 32 and the lid body 31 and the window material 32 due to the difference in the linear expansion coefficient between the window material 32 and the lid body 31. Become.
  • the material of the window material 32 is not limited to borosilicate glass, but other glass, silicone resin, acrylic resin, glass, organic components, and inorganic An organic / inorganic hybrid material in which components are mixed and bonded at the nm level or molecular level may be used.
  • the window material 32 may contain a wavelength conversion material such as a phosphor that converts the wavelength of light from the light emitting element 6.
  • the first flange 31 b of the lid 3 is joined to the mounting substrate 1 via the second joint 4.
  • a material of the second joint portion 4 for example, an epoxy resin or the like can be employed.
  • the 2nd junction part 4 is located in the place where the light from the light emitting element 6 does not reach directly. For this reason, as a material of the 2nd junction part 4, an epoxy resin etc. are employable, for example. Therefore, when the lid body 31 is formed of stainless steel, the package 10 can further increase the adhesive force between the lid body 31 and the second joint portion 4.
  • the window member 32 is a lens, and includes an aspheric lens portion 32a and a base portion 32b protruding outward from the outer peripheral portion of the aspheric lens portion 32a.
  • the aspheric lens portion 32a is formed in a biconvex aspheric lens shape.
  • the aspherical lens part 32a constitutes a lens part.
  • the base portion 32b is formed in an annular shape.
  • the base portion 32b preferably has a uniform thickness dimension.
  • the aspheric lens portion 32a includes a first lens surface 32aa and a second lens surface 32ab.
  • the first lens surface 32 aa is located inside the lid body 31, and the second lens surface 32 ab is located outside the lid body 31.
  • the first lens surface 32aa is an aspheric first convex curved surface.
  • the second lens surface 32ab is an aspherical second convex curved surface. The curvatures of the first convex curved surface and the second convex curved surface change continuously.
  • the first lens surface 32aa and the second lens surface 32ab have different shapes, the shape is not limited to this and may be the same.
  • the window member 32 constituting the lens has an aspheric lens portion 32a disposed in the window hole 31d and a base portion 32b joined to the second flange 31c.
  • the base part 32b is joined over the entire circumference of one surface in the thickness direction of the second flange 31c.
  • the base portion 32b preferably has a larger width dimension in the direction along the radial direction of the aspheric lens portion 32a.
  • the lid 3 can have substantially the same width dimension of the base portion 32b and the width dimension of the second flange 31c. Thereby, the lid
  • the airtightness of the lid 3 means the airtightness of the joint portion between the lid main body 31 and the window member 32.
  • the package 10 can improve the airtightness and can extend the life.
  • the package 10 does not join the window member 32 and the second flange 31c, and instead of the ring-shaped packing 8 between the second flange 31c of the lid 3 and the reflector 2, as in Modification 1 shown in FIG. And a base portion 32b of the window member 32 may be sandwiched and overlapped. Thereby, the package 10 can ensure airtightness without joining the window material 32 and the second flange 31c.
  • a material for the packing 8 it is preferable to employ a fluorine-based resin or the like. Thereby, the package 10 can suppress the deterioration of the packing 8 due to the ultraviolet rays from the light emitting element 6 when the light emitting element 6 is an ultraviolet LED chip.
  • the fluororesin for example, Teflon (registered trademark) can be adopted.
  • the shape of the window material 32 constituting the lens is not particularly limited.
  • the window material 32 in the package 10 is not limited to the aspherical lens portion 32a formed in a biconvex aspherical lens shape.
  • the window member 32 in the package 10 may have an aspheric lens portion 32 a formed into a plano-convex aspheric lens shape.
  • the first lens surface 32aa is an aspherical convex curved surface
  • the second lens surface 32ab is a flat surface.
  • the first lens surface 32aa is a flat surface
  • the second lens surface 32ab is an aspheric convex curved surface.
  • the number of the light emitting elements 6 to be mounted on the mounting substrate 1 is not limited to a plurality, and the package 10 may be one as in Modification 4 shown in FIG.
  • the second conductor layer 13b of the submount member 13 only needs to be patterned so that power can be supplied to the light emitting elements 6.
  • the present invention can also be applied to the case of the window material 32 such as 2 to 4 or when the window material 32 is flat.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

This package for light emitting elements is provided with a mounting board, a reflector and a cover. The cover is bonded to the mounting board, while covering the reflector. The mounting board is provided with a metal plate, an electrically insulating layer, a hole formed in the electrically insulating layer, a first conductor layer, and a sub-mount member. The sub-mount member is provided with a base and a second conductor layer. The first conductor layer has a first terminal part in the projection region of the reflector, while having a second terminal part outside the cover. The second conductor layer has a wiring part that extends across from the mounting region to the projection region of the reflector on the mounting board. With respect to the mounting board, the wiring part and the first terminal part are electrically connected to each other via a wire.

Description

発光素子用パッケージ及びそれを用いた発光装置LIGHT EMITTING ELEMENT PACKAGE AND LIGHT EMITTING DEVICE USING THE SAME
 本発明は、発光素子用パッケージ及びそれを用いた発光装置に関するものである。 The present invention relates to a light emitting device package and a light emitting device using the same.
発光素子を収納する発光素子用パッケージとしては、例えば、図8に示す構成の発光素子収納用パッケージが提案されている(日本国特許第4454237号公報を参照)。以下では、日本国特許第4454237号公報を文献1と称する。 As a light emitting element package for housing a light emitting element, for example, a light emitting element housing package having a configuration shown in FIG. 8 has been proposed (see Japanese Patent No. 4454237). Hereinafter, Japanese Patent No. 4454237 is referred to as Document 1.
 図8に示す構成の発光素子収納用パッケージは、基体101と、枠体102と、蓋体103とを備えている。 8 includes a base 101, a frame 102, and a lid 103.
 基体101は、セラミックスにより形成されている。また、基体101は、発光素子106を搭載するための搭載部101aを有している。 The substrate 101 is made of ceramics. In addition, the base 101 has a mounting portion 101 a for mounting the light emitting element 106.
 基体101には、図示していないメタライズ配線が形成されており、メタライズ配線の一部が、基体101の下面に露出している。 A metallized wiring (not shown) is formed on the base 101, and a part of the metallized wiring is exposed on the lower surface of the base 101.
 枠体102は、紫外光領域から可視光領域の光に対し反射率が高いAl、Ag、Au等の金属、又はセラミックス、又は樹脂により形成されている。枠体102の中心部には、内周面が上側に向うに伴って外側に広がっている貫通孔102aが形成されている。また、枠体102がセラミックス又は樹脂により形成されている場合、枠体102の表面には、Al、Ag、Au、Pt、Cu等の金属からなる反射層が形成されている。 The frame body 102 is made of a metal such as Al, Ag, or Au, which has a high reflectance with respect to light in the ultraviolet light region to the visible light region, ceramics, or resin. A through-hole 102a is formed at the center of the frame body 102. The through-hole 102a expands outward as the inner peripheral surface moves upward. When the frame body 102 is formed of ceramics or resin, a reflective layer made of a metal such as Al, Ag, Au, Pt, or Cu is formed on the surface of the frame body 102.
 枠体102は、枠体102の下面の内周部の全周にわたって凸部105aが形成されており、凸部105aが基体101の上面に接合されている。これにより、枠体102は、下面の外周部が全周にわたって基体101の上面との間に隙間を有している。 The frame body 102 has a convex portion 105 a formed on the entire inner periphery of the lower surface of the frame body 102, and the convex portion 105 a is joined to the upper surface of the base body 101. Accordingly, the frame body 102 has a gap between the outer peripheral portion of the lower surface and the upper surface of the base body 101 over the entire periphery.
 蓋体103は、ガラス、サファイア、石英、樹脂等の透光性材料により形成されている。文献1には、蓋体103をレンズ状にすることにより光学レンズの機能を付加してもよい旨が記載されている。 The lid 103 is made of a translucent material such as glass, sapphire, quartz, or resin. Document 1 describes that the function of an optical lens may be added by making the lid 103 into a lens shape.
 なお、文献1には、上述の発光素子収納用パッケージと、搭載部101aに搭載された発光素子106とを備えた発光装置も記載されている。 Note that Document 1 also describes a light emitting device that includes the light emitting element storage package described above and the light emitting element 106 mounted on the mounting portion 101a.
 また、発光素子用パッケージとしては、例えば、図9に示す構成の発光素子収納用パッケージ210も提案されている(国際公開2006/013899号を参照)。 Further, as a light emitting element package, for example, a light emitting element accommodation package 210 having a configuration shown in FIG. 9 has been proposed (see International Publication No. 2006/013899).
 発光素子収納用パッケージ210は、セラミック製の絶縁基板211と、絶縁基板211の外周上面に接合されたリフレクター枠体212とを備えている。 The light emitting element storage package 210 includes a ceramic insulating substrate 211 and a reflector frame 212 joined to the outer peripheral upper surface of the insulating substrate 211.
 リフレクター枠体212が絶縁基板211と同一組成又は異なる材料からなり、絶縁基板211の上面に焼結一体化されている。ここで、リフレクター枠体212は、白色窒化物セラミックスから構成されている。 The reflector frame 212 is made of the same composition or different material as the insulating substrate 211 and is integrated with the upper surface of the insulating substrate 211 by sintering. Here, the reflector frame 212 is made of white nitride ceramics.
 絶縁基板211の下面には、回路基板等に電気的に接続するための供給用配線パターン層215が被着形成されている。また、絶縁基板211の上面には、発光素子接続用配線パターン層214が被着形成されている。 On the lower surface of the insulating substrate 211, a supply wiring pattern layer 215 for electrical connection to a circuit board or the like is deposited. In addition, a light emitting element connecting wiring pattern layer 214 is formed on the upper surface of the insulating substrate 211.
 また、絶縁基板211には、絶縁基板211の上下面にわたって貫通する配線用貫通孔216が形成されている。この配線用貫通孔216には、導電部材217が充填され、導電部222が形成されている。発光素子収納用パッケージ210は、導電部222を介して、発光素子接続用配線パターン層214と供給用配線パターン層215とが、電気的に導通するようになっている。発光素子収納用パッケージ210は、発光素子接続用配線パターン層214に、バンプ電極220を介して、発光素子206が電気的に接続されるようになっている。 Further, wiring through holes 216 are formed in the insulating substrate 211 so as to penetrate through the upper and lower surfaces of the insulating substrate 211. The wiring through-hole 216 is filled with a conductive member 217 to form a conductive portion 222. In the light emitting element storage package 210, the light emitting element connection wiring pattern layer 214 and the supply wiring pattern layer 215 are electrically connected to each other through the conductive portion 222. The light emitting element storage package 210 is configured such that the light emitting element 206 is electrically connected to the light emitting element connecting wiring pattern layer 214 via the bump electrode 220.
 また、発光装置としては、例えば、図10に示す構成の発光装置300が提案されている(日本国特許公開2007-88081号公報を参照)。 As a light emitting device, for example, a light emitting device 300 having a configuration shown in FIG. 10 has been proposed (see Japanese Patent Publication No. 2007-88081).
 発光装置300は、LEDチップ306と、実装基板301と、サブマウント部材313と、ボンディングワイヤ317と、リフレクタ302と、封止部305と、レンズ307と、空気層309と、色変換部材308とを備えている。 The light emitting device 300 includes an LED chip 306, a mounting substrate 301, a submount member 313, a bonding wire 317, a reflector 302, a sealing portion 305, a lens 307, an air layer 309, and a color conversion member 308. It has.
 ところで、図8の構成の発光素子収納用パッケージでは、枠体102の下面の内周部の全周にわたって形成された凸部105aのみが基体101の上面に接合されているので、蓋体103の上面側からの荷重に対する強度が低くなりやすい。 By the way, in the light emitting element storage package having the configuration shown in FIG. 8, only the convex portion 105 a formed over the entire inner periphery of the lower surface of the frame body 102 is bonded to the upper surface of the base body 101. The strength against the load from the upper surface side tends to be low.
 図9の構成の発光素子収納用パッケージ210では、リフレクター枠体212が絶縁基板211と同一組成又は異なる材料からなり、絶縁基板211の上面に焼結一体化されている。このため、発光素子収納用パッケージ210では、リフレクター枠体212の材料として、より反射率の高い金属を採用することができず、光取り出し効率の向上が難しい。 9, in the light emitting element storage package 210, the reflector frame 212 is made of the same composition or different material as the insulating substrate 211, and is integrated with the upper surface of the insulating substrate 211 by sintering. For this reason, in the light emitting element storage package 210, a metal having higher reflectivity cannot be adopted as the material of the reflector frame 212, and it is difficult to improve the light extraction efficiency.
 図10の発光装置300では、LEDチップ306の側面から放射される光の一部がボンディングワイヤ317により遮られ、光取り出し効率が低下してしまう懸念がある。 In the light emitting device 300 of FIG. 10, there is a concern that a part of the light emitted from the side surface of the LED chip 306 is blocked by the bonding wire 317 and the light extraction efficiency is lowered.
 また、図10の発光装置300では、リフレクタ302とLEDチップ306との間にボンディングワイヤ317がある。そのため、発光装置300は、リフレクタ302の開口面積の縮小化が制限され、LEDチップ306の側面から放射された光のうちリフレクタ302に直接入射しない光の光量が増加し、光取り出し効率が低下してしまう懸念がある。 In the light emitting device 300 of FIG. 10, the bonding wire 317 is provided between the reflector 302 and the LED chip 306. Therefore, in the light emitting device 300, the reduction of the opening area of the reflector 302 is limited, and the amount of light that does not directly enter the reflector 302 out of the light emitted from the side surface of the LED chip 306 increases, and the light extraction efficiency decreases. There is a concern.
 そこで、本発明の目的は、信頼性の向上を図ることが可能で且つ光取り出し効率の向上を図ることが可能な発光素子用パッケージ及びそれを用いた発光装置を提供することにある。 Therefore, an object of the present invention is to provide a light emitting element package capable of improving reliability and improving light extraction efficiency, and a light emitting device using the same.
 本発明の発光素子用パッケージは、発光素子を実装する実装基板と、前記実装基板の一表面側で前記実装基板における前記発光素子の実装領域を囲んで配置されたリフレクタとを備えている。発光素子用パッケージは、前記実装基板の前記一表面側で前記リフレクタを覆い前記実装基板に接合された蓋を備えている。前記蓋は、蓋本体と、前記蓋本体において前記実装領域の前方に形成された窓孔を塞ぐように前記蓋本体に接合された光取り出し用の窓材とを備えている。前記実装基板は、金属板と、前記金属板の前記一表面側に形成された電気絶縁層と、前記電気絶縁層に形成され前記金属板の前記一表面の一部を露出させる孔と、前記電気絶縁層上に形成された給電用の第1導体層とを備えている。前記実装基板は、前記孔の内側に配置され前記金属板の前記一表面側に接合されたサブマウント部材を備えている。前記サブマウント部材は、前記電気絶縁層よりも熱伝導率が高く且つ電気絶縁性を有する基材と、前記基材における前記金属板側とは反対の表面側に形成された給電用の第2導体層とを備えている。前記第1導体層は、前記実装基板における前記蓋の投影領域と当該投影領域の外側とに跨って形成されている。前記第1導体層は、前記リフレクタの投影領域に、内部接続用の第1端子部を有し、前記蓋の外側に、外部接続用の第2端子部を有している。前記第2導体層は、前記実装領域と、前記実装基板における前記リフレクタの投影領域とに跨って形成されている配線部を有している。前記配線部と前記第1端子部とは、ワイヤを介して電気的に接続されている。前記リフレクタは、前記実装基板との対向面に、前記ワイヤを収納する凹所が形成されていることを特徴とする。これにより、本発明の発光素子用パッケージは、信頼性の向上を図ることが可能で且つ光取り出し効率の向上を図ることが可能となる、という効果がある。 この発光素子用パッケージにおいて、前記凹所は、前記リフレクタの前記実装基板側の表面における外周端と内周端との両方から離れていることが好ましい。 The light emitting element package of the present invention includes a mounting substrate on which the light emitting element is mounted, and a reflector disposed on one surface side of the mounting substrate so as to surround the mounting region of the light emitting element. The light emitting device package includes a lid that covers the reflector on the one surface side of the mounting substrate and is bonded to the mounting substrate. The lid includes a lid body and a light extraction window member joined to the lid body so as to close a window hole formed in front of the mounting region in the lid body. The mounting board includes a metal plate, an electric insulating layer formed on the one surface side of the metal plate, a hole formed in the electric insulating layer and exposing a part of the one surface of the metal plate, And a first conductor layer for feeding formed on the electrical insulating layer. The mounting board includes a submount member disposed inside the hole and bonded to the one surface side of the metal plate. The submount member includes a base material having a thermal conductivity higher than that of the electrical insulating layer and having an electrical insulation property, and a second power supply formed on the surface side of the base material opposite to the metal plate side. And a conductor layer. The first conductor layer is formed across the projection area of the lid and the outside of the projection area on the mounting substrate. The first conductor layer has a first terminal portion for internal connection in the projection region of the reflector, and has a second terminal portion for external connection outside the lid. The second conductor layer has a wiring portion formed across the mounting region and the projection region of the reflector on the mounting substrate. The wiring part and the first terminal part are electrically connected via a wire. The reflector is characterized in that a recess for accommodating the wire is formed on a surface facing the mounting substrate. As a result, the light emitting device package of the present invention has an effect that the reliability can be improved and the light extraction efficiency can be improved. In this light emitting device package, it is preferable that the recess is separated from both the outer peripheral end and the inner peripheral end of the surface of the reflector on the mounting substrate side.
 この発光素子用パッケージにおいて、前記リフレクタは、前記サブマウント部材に重なる領域では前記実装基板に接合されずに接触しており、前記電気絶縁層に重なる領域で前記実装基板に接合されていることが好ましい。 In this light emitting device package, the reflector is in contact with the mounting substrate without being bonded to the mounting substrate in a region overlapping the submount member, and is bonded to the mounting substrate in a region overlapping with the electrical insulating layer. preferable.
 この発光素子用パッケージにおいて、前記窓材は、レンズであり、前記リフレクタは、前記実装基板側とは反対の表面に、前記レンズを囲み前記レンズを位置決めする凸部を有することが好ましい。 In this light emitting device package, it is preferable that the window material is a lens, and the reflector has a convex portion that surrounds the lens and positions the lens on a surface opposite to the mounting substrate side.
 この発光素子用パッケージにおいて、前記凸部は、環状であり、前記実装基板から離れるにつれて開口面積が徐々に大きくなっていることが好ましい。 In this light emitting device package, it is preferable that the convex portion is annular, and the opening area gradually increases as the distance from the mounting substrate increases.
 この発光素子用パッケージにおいて、前記蓋本体は、筒体と、前記筒体における前記実装基板に近い側の端部である第1端部から外方へ突出した第1フランジを備えている。前記蓋本体は、前記筒体における前記実装基板から遠い側の端部である第2端部から内方へ突出した第2フランジを備えている。前記蓋本体では、前記第2フランジの内周面が前記窓孔の内周面である。前記レンズは、レンズ部と、前記レンズ部の外周部から全周に亘って外方に突出したベース部とを有している。前記レンズは、前記レンズ部が前記窓孔に配置され、前記ベース部が前記第2フランジに接合されていることが好ましい。 In this light emitting device package, the lid body includes a cylinder and a first flange protruding outward from a first end which is an end of the cylinder close to the mounting substrate. The lid body includes a second flange that protrudes inward from a second end portion that is an end portion of the cylindrical body that is far from the mounting substrate. In the lid body, the inner peripheral surface of the second flange is the inner peripheral surface of the window hole. The lens includes a lens portion and a base portion protruding outward from the outer peripheral portion of the lens portion over the entire circumference. In the lens, it is preferable that the lens portion is disposed in the window hole and the base portion is bonded to the second flange.
 本発明の発光装置は、前記発光素子用パッケージと、前記発光素子とを備えることを特徴とする。これにより、本発明の発光装置は、信頼性の向上を図ることが可能で且つ光取り出し効率の向上を図ることが可能となる、という効果がある。 The light-emitting device of the present invention includes the light-emitting element package and the light-emitting element. Thereby, the light emitting device of the present invention has an effect that it is possible to improve the reliability and to improve the light extraction efficiency.
 本発明の好ましい実施形態を更に詳細に記述する。本発明の他の特徴及び利点は、以下の詳細な記述及び添付図面に関連して一層良く理解されるものである。
図1は、実施形態の発光素子用パッケージを備えた発光装置の概略断面図である。 図2は、実施形態の発光素子用パッケージを備えた発光装置の概略斜視図である。 図3は、実施形態の発光素子用パッケージを備えた発光装置の概略平面図である。 図4は、実施形態の発光素子用パッケージを備えた発光装置の第1変形例の概略断面図である。 図5は、実施形態の発光素子用パッケージを備えた発光装置の第2変形例の概略断面図である。 図6は、実施形態の発光素子用パッケージを備えた発光装置の第3変形例の概略断面図である。 図7は、実施形態の発光素子用パッケージを備えた発光装置の第4変形例の概略断面図である。 図8は、従来例の発光素子収納用パッケージの断面図である。 図9は、他の従来例の発光素子収納用パッケージの断面図である。 図10は、別の従来例の発光装置の断面図である。
Preferred embodiments of the invention are described in further detail. Other features and advantages of the present invention will be better understood with reference to the following detailed description and accompanying drawings.
FIG. 1 is a schematic cross-sectional view of a light emitting device including the light emitting element package of the embodiment. FIG. 2 is a schematic perspective view of a light emitting device including the light emitting element package of the embodiment. FIG. 3 is a schematic plan view of a light emitting device including the light emitting element package of the embodiment. FIG. 4 is a schematic cross-sectional view of a first modification of the light emitting device including the light emitting element package of the embodiment. FIG. 5 is a schematic cross-sectional view of a second modification of the light emitting device including the light emitting element package of the embodiment. FIG. 6 is a schematic cross-sectional view of a third modification of the light emitting device including the light emitting element package of the embodiment. FIG. 7 is a schematic cross-sectional view of a fourth modification of the light emitting device including the light emitting element package of the embodiment. FIG. 8 is a cross-sectional view of a conventional light emitting element storage package. FIG. 9 is a cross-sectional view of another conventional light emitting element storage package. FIG. 10 is a cross-sectional view of another conventional light emitting device.
  以下では、本実施形態の発光素子用パッケージ10について、図1~図3に基づいて説明する。以下では、発光素子用パッケージ10を、パッケージ10とも称する。 Hereinafter, the light emitting device package 10 of the present embodiment will be described with reference to FIGS. Hereinafter, the light emitting element package 10 is also referred to as a package 10.
 パッケージ10は、実装基板1と、リフレクタ2と、蓋3とを備える。このパッケージ10を用いた発光装置は、このパッケージ10と、このパッケージ10に収納された発光素子6とを備える。発光素子6は、固体発光素子であり、LEDチップを採用しているが、これに限らず、半導体レーザチップを採用することもできる。 The package 10 includes a mounting substrate 1, a reflector 2, and a lid 3. A light emitting device using the package 10 includes the package 10 and the light emitting element 6 housed in the package 10. The light emitting element 6 is a solid light emitting element and employs an LED chip. However, the present invention is not limited to this, and a semiconductor laser chip can also be employed.
 実装基板1は、発光素子6を実装する基板である。「実装する」とは、発光素子6を配置して機械的に接続すること及び電気的に接続することを含む概念である。このため、実装基板1は、発光素子6を機械的に保持する機能と、発光素子6へ給電するための配線を形成する機能とを備えている。実装基板1は、複数個の発光素子6を実装できるように構成されている。実装基板1は、例えば、6個の発光素子6を実装することができる。実装基板1は、実装可能な発光素子6の個数を特に限定するものではない。実装基板1は、例えば、6個以外の複数個の発光素子6を実装するものでもよい。実装基板1は、一表面と当該一表面に対向する他表面とを備えている。以下では、実装基板1の一表面を第1表面1aaと称する。 The mounting substrate 1 is a substrate on which the light emitting element 6 is mounted. “Mounting” is a concept including arranging and mechanically connecting the light emitting elements 6 and electrically connecting them. For this reason, the mounting substrate 1 has a function of mechanically holding the light emitting element 6 and a function of forming a wiring for supplying power to the light emitting element 6. The mounting substrate 1 is configured so that a plurality of light emitting elements 6 can be mounted. For example, six light emitting elements 6 can be mounted on the mounting substrate 1. The mounting substrate 1 does not particularly limit the number of light-emitting elements 6 that can be mounted. For example, the mounting substrate 1 may be one on which a plurality of light emitting elements 6 other than six are mounted. The mounting substrate 1 includes one surface and another surface facing the one surface. Hereinafter, one surface of the mounting substrate 1 is referred to as a first surface 1aa.
 リフレクタ2は、実装基板1の第1表面1aa側で実装基板1における発光素子6の実装領域1aを囲んで配置されている。逆に言えば、実装基板1は、平面視においてリフレクタの内周線に囲まれた領域が実装領域1aを構成する。つまり、実装領域1aは、リフレクタ2により規定される。 The reflector 2 is disposed on the first surface 1aa side of the mounting substrate 1 so as to surround the mounting region 1a of the light emitting element 6 on the mounting substrate 1. In other words, in the mounting substrate 1, a region surrounded by the inner peripheral line of the reflector in the plan view constitutes the mounting region 1 a. That is, the mounting area 1 a is defined by the reflector 2.
 蓋3は、実装基板1の第1表面1aa側でリフレクタ2を覆い実装基板1に接合されている。これにより、パッケージ10は、蓋3の上面側からの荷重に対する強度を向上させることが可能となり、信頼性を向上させることが可能となる。 The lid 3 covers the reflector 2 on the first surface 1aa side of the mounting substrate 1 and is joined to the mounting substrate 1. As a result, the package 10 can improve the strength against the load from the upper surface side of the lid 3 and can improve the reliability.
 蓋3は、蓋本体31と、蓋本体31において実装領域1aの前方に形成された窓孔31dを塞ぐように接合された光取り出し用の窓材32とを備える。 The lid 3 includes a lid main body 31 and a light extraction window member 32 joined so as to close a window hole 31d formed in front of the mounting region 1a in the lid main body 31.
 実装基板1は、金属板11を備える。金属板11は、表面11aaと表面11aaに対向する裏面11abとを備える。実装基板1は、金属板11の表面11aa側に形成された電気絶縁層12aと、電気絶縁層12aに形成され金属板11の表面11aaの一部を露出させる孔14とを備える。以下では、電気絶縁層12aを第1電気絶縁層12aとも称する。更に、実装基板1は、第1電気絶縁層12a上に形成された給電用の第1導体層12bと、孔14の内側に配置され金属板11の表面11aa側に接合されたサブマウント部材13とを備える。 The mounting substrate 1 includes a metal plate 11. The metal plate 11 includes a front surface 11aa and a back surface 11ab facing the front surface 11aa. The mounting substrate 1 includes an electric insulating layer 12a formed on the surface 11aa side of the metal plate 11, and a hole 14 formed in the electric insulating layer 12a and exposing a part of the surface 11aa of the metal plate 11. Hereinafter, the electrical insulating layer 12a is also referred to as a first electrical insulating layer 12a. Further, the mounting substrate 1 includes a first power supply conductor layer 12b formed on the first electrical insulating layer 12a and a submount member 13 disposed inside the hole 14 and joined to the surface 11aa side of the metal plate 11. With.
 サブマウント部材13は、第1電気絶縁層12aよりも熱伝導率が高く且つ電気絶縁性を有する基材13aと、基材13aにおける金属板11側とは反対の表面側に形成された給電用の第2導体層13bとを備える。 The submount member 13 has a heat conductivity higher than that of the first electric insulating layer 12a and has an electric insulating property, and a power supply formed on the surface of the substrate 13a opposite to the metal plate 11 side. Second conductor layer 13b.
 第1導体層12bは、実装基板1における蓋3の投影領域と当該投影領域の外側とに跨って形成されている。第1導体層12bは、2個、設けることができる。第1導体層12bは、リフレクタ2の投影領域に、内部接続用の第1端子部12baを有し、蓋3の外側に、外部接続用の第2端子部12bbを有している。実装基板1は、2つの第2端子部12bbのうちの一方が高電位側の外部接続端子を構成し、他方が低電位側の外部接続端子を構成する。 The first conductor layer 12b is formed across the projection area of the lid 3 on the mounting substrate 1 and the outside of the projection area. Two first conductor layers 12b can be provided. The first conductor layer 12 b has a first terminal portion 12 ba for internal connection in the projection region of the reflector 2, and has a second terminal portion 12 bb for external connection outside the lid 3. In the mounting substrate 1, one of the two second terminal portions 12bb constitutes an external connection terminal on the high potential side, and the other constitutes an external connection terminal on the low potential side.
 第2導体層13bは、実装領域1aと実装基板1におけるリフレクタ2の投影領域とに跨って形成されている配線部13bbを有している。配線部13bbは、2個、設けることができる。 The second conductor layer 13b has a wiring portion 13bb formed across the mounting region 1a and the projection region of the reflector 2 on the mounting substrate 1. Two wiring portions 13bb can be provided.
 実装基板1は、隣り合って配置されている配線部13bbと第1端子部12baとが、ワイヤ17を介して電気的に接続されている。実装基板1は、2個のワイヤ17を備えている。なお、本実施形態のパッケージ10では、第1導体層12b、第2導体層13b及び各ワイヤ17により、配線を形成している。 In the mounting substrate 1, the wiring portion 13 bb and the first terminal portion 12 ba arranged adjacent to each other are electrically connected via the wire 17. The mounting substrate 1 includes two wires 17. In the package 10 of the present embodiment, wiring is formed by the first conductor layer 12b, the second conductor layer 13b, and each wire 17.
 リフレクタ2は、実装基板1との対向面に、ワイヤ17を収納する凹所2bが形成されている。これにより、パッケージ10は、発光素子6の側面から放射される光がワイヤ17により遮られるのを防止することができる。しかも、パッケージ10は、発光素子6の側面から放射された光のうちリフレクタ2に直接入射しない光の光量を低減することが可能となる。よって、パッケージ10は、光取り出し効率の向上を図ることが可能となる。 The reflector 2 has a recess 2b for accommodating the wire 17 on the surface facing the mounting substrate 1. Thereby, the package 10 can prevent the light emitted from the side surface of the light emitting element 6 from being blocked by the wire 17. Moreover, the package 10 can reduce the amount of light that is not directly incident on the reflector 2 out of the light emitted from the side surface of the light emitting element 6. Therefore, the package 10 can improve the light extraction efficiency.
 以下、パッケージ10及び発光装置の各構成要素について詳細に説明する。 Hereinafter, each component of the package 10 and the light emitting device will be described in detail.
 発光素子6を構成するLEDチップとしては、紫外線(紫外光)を放射する紫外LEDチップを採用することができる。紫外LEDチップは、例えば、発光層の材料としてAlGaN系材料を採用しており、発光波長が210nm~360nmの紫外波長領域で発光可能なLEDチップである。 紫外LEDチップは、例えば、サファイア基板の一表面側に、AlN層、n形窒化物半導体層、発光層、電子ブロック層、p形窒化物半導体層、p形コンタクト層が積層された構成とすることができる。紫外LEDチップは、n形窒化物半導体層に電気的に接続された第1電極と、p形コンタクト層を介してp形窒化物半導体層に電気的に接続された第2電極とを備えたLEDチップを採用できる。n形窒化物半導体層は、例えば、n形AlxGa1-xN(0<x<1)層からなる。発光層は、AlGaN系材料からなる量子井戸構造を有している。量子井戸構造は、障壁層と井戸層とからなる。量子井戸構造は、多重量子井戸構造でもよいし、単一量子井戸構造でもよい。発光層は、所望の発光波長の紫外光を発光するように井戸層のAlの組成を設定してある。AlGaN系材料からなる発光層では、Alの組成比を変化させることにより、発光波長(発光ピーク波長)を210~360nmの範囲で任意の発光波長に設定することが可能である。紫外LEDチップは、例えば、所望の発光波長が265nm付近である場合、発光層のAlの組成比を0.50に設定すればよい。また、紫外LEDチップは、ダブルヘテロ構造が形成されるようにしてもよい。紫外LEDチップは、発光層を単層構造として、発光層と当該発光層の厚み方向の両側の層とを利用してダブルヘテロ構造とすることができる。発光層の厚み方向の両側の層は、例えば、n形窒化物半導体層及びp形窒化物半導体層を用いることができる。紫外LEDチップの構造は、特に限定するものではない。 LEDチップは、紫外LEDチップに限られない。LEDチップは、例えば、紫色光を放射する紫色LEDチップ、青色光を放射する青色LEDチップ、緑色を放射する緑色LEDチップ、赤色光を放射する赤色LEDチップ等を採用してもよい。また、LEDチップの発光層の材料や発光ピーク波長は、特に限定するものではない。また、複数個の発光素子6を備える発光装置では、発光ピーク波長の異なる複数種類のLEDチップを備えていてもよい。 As the LED chip constituting the light emitting element 6, an ultraviolet LED chip that emits ultraviolet rays (ultraviolet light) can be employed. The ultraviolet LED chip is, for example, an LED chip that employs an AlGaN-based material as a material of the light emitting layer and can emit light in an ultraviolet wavelength region of an emission wavelength of 210 nm to 360 nm. The ultraviolet LED chip has a configuration in which, for example, an AlN layer, an n-type nitride semiconductor layer, a light emitting layer, an electron block layer, a p-type nitride semiconductor layer, and a p-type contact layer are stacked on one surface side of a sapphire substrate. be able to. The ultraviolet LED chip includes a first electrode electrically connected to the n-type nitride semiconductor layer and a second electrode electrically connected to the p-type nitride semiconductor layer through the p-type contact layer. An LED chip can be adopted. The n-type nitride semiconductor layer is composed of, for example, an n-type Al x Ga 1-x N (0 <x <1) layer. The light emitting layer has a quantum well structure made of an AlGaN-based material. The quantum well structure includes a barrier layer and a well layer. The quantum well structure may be a multiple quantum well structure or a single quantum well structure. The light emitting layer has an Al composition of the well layer set so as to emit ultraviolet light having a desired light emitting wavelength. In the light-emitting layer made of an AlGaN-based material, the emission wavelength (emission peak wavelength) can be set to an arbitrary emission wavelength in the range of 210 to 360 nm by changing the Al composition ratio. In the ultraviolet LED chip, for example, when the desired emission wavelength is around 265 nm, the Al composition ratio of the light emitting layer may be set to 0.50. The ultraviolet LED chip may be formed with a double heterostructure. The ultraviolet LED chip can have a double hetero structure by using a light emitting layer as a single layer structure and using a light emitting layer and layers on both sides in the thickness direction of the light emitting layer. For example, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer can be used as layers on both sides in the thickness direction of the light emitting layer. The structure of the ultraviolet LED chip is not particularly limited. The LED chip is not limited to the ultraviolet LED chip. As the LED chip, for example, a purple LED chip that emits purple light, a blue LED chip that emits blue light, a green LED chip that emits green light, a red LED chip that emits red light, or the like may be employed. Further, the material of the light emitting layer of the LED chip and the light emission peak wavelength are not particularly limited. In addition, a light emitting device including a plurality of light emitting elements 6 may include a plurality of types of LED chips having different emission peak wavelengths.
 LEDチップは、チップサイズを、0.39mm□(0.39mm×0.39mm)としてある。LEDチップのチップサイズは、特に限定するものではない。LEDチップのチップサイズは、例えば、0.3mm□や0.45mm□や1mm□のもの等を用いることができる。また、LEDチップの外周形状は、正方形状に限らず、例えば、長方形状や、正六角形状等でもよい。 The LED chip has a chip size of 0.39 mm □ (0.39 mm × 0.39 mm). The chip size of the LED chip is not particularly limited. The chip size of the LED chip can be, for example, 0.3 mm □, 0.45 mm □, or 1 mm □. Further, the outer peripheral shape of the LED chip is not limited to a square shape, and may be, for example, a rectangular shape or a regular hexagonal shape.
 また、LEDチップは、厚みを0.16mm程度としてあるが、特に限定するものではない。 The LED chip has a thickness of about 0.16 mm, but is not particularly limited.
 発光素子6は、第1電極及び第2電極の各々が同一面側に配置されている。発光素子6は、第1電極及び第2電極それぞれが、バンプ7を介して一対の第2導体層13bと各別に電気的に接続することができる。第2導体層13bは、第1電極が接続される部分と、第2電極が接続される部分とが、電気的に絶縁されるように、所定のパターン形状で形成されている。発光素子6は、厚み方向の一面側に第1電極及び第2電極が配置されている構成で当該一面側から光を取り出す場合、第1電極及び第2電極の各々を、ワイヤを介して第2導体層13bと電気的に接続するようにしてもよい。 In the light emitting element 6, each of the first electrode and the second electrode is arranged on the same surface side. In the light emitting element 6, each of the first electrode and the second electrode can be electrically connected to the pair of second conductor layers 13 b via the bumps 7. The second conductor layer 13b is formed in a predetermined pattern shape so that the portion to which the first electrode is connected and the portion to which the second electrode is connected are electrically insulated. When the light-emitting element 6 takes out light from the one surface side in a configuration in which the first electrode and the second electrode are arranged on one surface side in the thickness direction, each of the first electrode and the second electrode is connected to the first electrode through the wire. You may make it electrically connect with the 2 conductor layer 13b.
 発光素子6は、厚み方向の一面側に第1電極及び第2電極が設けられたLEDチップに限らず、例えば、厚み方向の一面側に第1電極が設けられ、他面側に第2電極が設けられたLEDチップでもよい。この場合、発光素子6は、第1電極と第2電極との一方を導電性の接合材を介して第2導体層13bにダイボンドし、他方をワイヤを介して第2導体層13bと電気的に接続するようにすればよい。 The light emitting element 6 is not limited to the LED chip in which the first electrode and the second electrode are provided on one surface side in the thickness direction. For example, the first electrode is provided on one surface side in the thickness direction and the second electrode is provided on the other surface side. The LED chip provided with may be used. In this case, in the light emitting element 6, one of the first electrode and the second electrode is die-bonded to the second conductor layer 13b via a conductive bonding material, and the other is electrically connected to the second conductor layer 13b via a wire. It should be connected to.
 発光素子6については、上述のように、LEDチップに限らず、半導体レーザチップを採用することもできる。 As described above, the light-emitting element 6 is not limited to the LED chip, and a semiconductor laser chip may be employed.
 実装基板1の金属板11の外周形状は、矩形状としてある。なお、矩形状には、長方形と正方形の概念を含む。金属板11の外周形状は、矩形状に限らず、例えば、円形状や矩形以外の多角形状等でもよい。 The outer peripheral shape of the metal plate 11 of the mounting substrate 1 is a rectangular shape. Note that the rectangular shape includes the concept of a rectangle and a square. The outer peripheral shape of the metal plate 11 is not limited to a rectangular shape, and may be, for example, a circular shape or a polygonal shape other than a rectangular shape.
 金属板11の材料としては、熱伝導率の高い金属が好ましい。このため、金属板11の材料としては、銅を採用している。金属板11の材料は、銅に限らず、例えば、アルミニウム、アルミニウム合金、銀、リン青銅、銅合金(例えば、42アロイ等)、ニッケル合金等を採用することができる。金属板11の材料は、銅合金を用いた場合、例えば、42アロイ等を採用することができる。金属板11は、上述の材料からなる母材の表面に、図示していない表面処理層を設けたものでもよい。表面処理層としては、例えば、Au膜、Al膜、Ag膜等の単層膜を採用することができる。また、表面処理層としては、例えば、Ni膜とPd膜とAu膜との積層膜、Ni膜とAu膜との積層膜、Ag膜とPd膜とAuAg合金膜との積層膜を採用することができる。表面処理層は、めっき層等により構成することが好ましい。要するに、表面処理層は、めっき法により形成することが好ましいが、めっき法により形成したものだけに限られない。 As the material of the metal plate 11, a metal having high thermal conductivity is preferable. For this reason, copper is adopted as the material of the metal plate 11. The material of the metal plate 11 is not limited to copper, and for example, aluminum, aluminum alloy, silver, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, or the like can be employed. When the copper alloy is used as the material of the metal plate 11, for example, 42 alloy or the like can be adopted. The metal plate 11 may be provided with a surface treatment layer (not shown) on the surface of a base material made of the above-described material. As the surface treatment layer, for example, a single layer film such as an Au film, an Al film, or an Ag film can be employed. Further, as the surface treatment layer, for example, a laminated film of Ni film, Pd film and Au film, a laminated film of Ni film and Au film, a laminated film of Ag film, Pd film and AuAg alloy film should be adopted. Can do. The surface treatment layer is preferably composed of a plating layer or the like. In short, the surface treatment layer is preferably formed by a plating method, but is not limited to one formed by a plating method.
 第1電気絶縁層12aは、金属板11の表面11aa上に形成されており、金属板11の表面11aaの中央部を露出させる孔14が形成されている。孔14の開口形状は、矩形状としてある。孔14の開口形状は、サブマウント部材13の外周形状と相似形状であるのが好ましい。孔14の開口形状は、特に限定するものではなく、サブマウント部材13の外周形状に基づいて適宜設計すればよい。なお、金属板11の表面11aaには、サブマウント部材13の位置決め精度を高めるため、図示していないアライメントマークが形成されているのが好ましい。 The first electrical insulating layer 12a is formed on the surface 11aa of the metal plate 11, and a hole 14 is formed to expose the central portion of the surface 11aa of the metal plate 11. The opening shape of the hole 14 is rectangular. The opening shape of the hole 14 is preferably similar to the outer peripheral shape of the submount member 13. The opening shape of the hole 14 is not particularly limited, and may be appropriately designed based on the outer peripheral shape of the submount member 13. Note that an alignment mark (not shown) is preferably formed on the surface 11aa of the metal plate 11 in order to increase the positioning accuracy of the submount member 13.
 第1導体層12bの材料としては、例えば、銅、リン青銅、銅合金(例えば、42アロイ等)、ニッケル合金、アルミニウム、アルミニウム合金等を採用することができる。第1導体層12bの材料は、銅合金を用いる場合、例えば、42アロイ等を採用することができる。第1導体層12bは、例えば、金属箔、金属膜等を利用して形成することができる。第1導体層12bは、Cu層とNi層とAu層との積層構造を有し、最表面側がAu層となっているのが好ましい。なお、各第1導体層12bは、第1電気絶縁層12aの外周形状における面積の半分よりもやや小さな面積の外周形状に形成することができる。 As the material of the first conductor layer 12b, for example, copper, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, aluminum, aluminum alloy, or the like can be used. As the material of the first conductor layer 12b, when a copper alloy is used, for example, 42 alloy or the like can be adopted. The first conductor layer 12b can be formed using, for example, a metal foil, a metal film, or the like. The first conductor layer 12b preferably has a laminated structure of a Cu layer, a Ni layer, and an Au layer, and the outermost surface side is preferably an Au layer. In addition, each 1st conductor layer 12b can be formed in the outer periphery shape of a slightly smaller area than the half of the area in the outer periphery shape of the 1st electric insulation layer 12a.
 第1電気絶縁層12a及び第1導体層12bは、例えば、プリント配線板を利用して形成することができる。第1電気絶縁層12aは、プリント配線板の絶縁性基材と、この絶縁性基材と金属板11とを固着する固着シートとで、構成することができる。第1電気絶縁層12aは、例えば、外周形状が金属板11の外周形状に合わせた矩形状とすることができる。絶縁性基材としては、例えば、ポリイミドフィルム、紙フェノール基板、ガラスエポキシ基板等を採用することができる。固着シートとしては、例えば、ポリオレフィン系の固着シートを採用することができる。 The first electrical insulating layer 12a and the first conductor layer 12b can be formed using, for example, a printed wiring board. The first electrical insulating layer 12a can be composed of an insulating base material of a printed wiring board and a fixing sheet that fixes the insulating base material and the metal plate 11 together. For example, the first electrical insulating layer 12 a may have a rectangular shape whose outer peripheral shape matches the outer peripheral shape of the metal plate 11. As an insulating base material, a polyimide film, a paper phenol board | substrate, a glass epoxy board | substrate etc. are employable, for example. As the fixing sheet, for example, a polyolefin-based fixing sheet can be employed.
 実装基板1は、金属板11と第1電気絶縁層12aと第1導体層12bとを、金属ベースプリント配線板を利用して形成してもよい。この場合には、金属ベースプリント配線板の金属板、絶縁層及び銅箔それぞれにより、実装基板1の金属板11、第1電気絶縁層12a及び第1導体層12bを形成することができる。すなわち、金属ベースプリント配線板は、金属板が実装基板1の金属板11となり、絶縁層が実装基板1の第1電気絶縁層12aとなり、銅箔が実装基板1の第1導体層12bとなる。 The mounting substrate 1 may be formed by using the metal base printed wiring board, the metal plate 11, the first electrical insulating layer 12a, and the first conductor layer 12b. In this case, the metal plate 11, the first electrical insulating layer 12a, and the first conductor layer 12b of the mounting substrate 1 can be formed of the metal plate, the insulating layer, and the copper foil of the metal base printed wiring board. That is, in the metal-based printed wiring board, the metal plate becomes the metal plate 11 of the mounting substrate 1, the insulating layer becomes the first electrical insulating layer 12 a of the mounting substrate 1, and the copper foil becomes the first conductor layer 12 b of the mounting substrate 1. .
 実装基板1は、第1端子部12baと第2端子部12bbとを除いた第1導体層12bを覆うように保護層16が積層されている。また、保護層16は、第1電気絶縁層12aにおいて第1導体層12bが形成されていない部位も覆っている。保護層16としては、例えば、白色系のレジスト層を採用することができる。このレジスト層の材料としては、例えば、硫酸バリウム(BaSO4)、二酸化チタン(TiO2)等の白色顔料を含有した樹脂からなる白色レジストを採用することができる。レジスト層は、白色顔料を含有する樹脂の材料として、例えば、シリコーン樹脂等を採用することができる。白色レジストとしては、例えば、株式会社朝日ラバーのシリコーン製の白色レジスト材“ASA COLOR RESIST INK”等を採用することができる。白色系のレジスト層は、例えば、塗布法により形成することができる。 The mounting substrate 1 has a protective layer 16 laminated so as to cover the first conductor layer 12b excluding the first terminal portion 12ba and the second terminal portion 12bb. The protective layer 16 also covers a portion of the first electrical insulating layer 12a where the first conductor layer 12b is not formed. As the protective layer 16, for example, a white resist layer can be employed. As a material of the resist layer, for example, a white resist made of a resin containing a white pigment such as barium sulfate (BaSO 4 ) or titanium dioxide (TiO 2 ) can be employed. For the resist layer, for example, a silicone resin or the like can be adopted as a resin material containing a white pigment. As the white resist, for example, a white resist material “ASA COLOR RESIST INK” made by Asahi Rubber Co., Ltd. can be used. The white resist layer can be formed by, for example, a coating method.
 パッケージ10は、保護層16が白色系のレジスト層からなることにより、発光素子6から実装基板1に入射する光を、保護層16の表面で反射させやすくなる。これにより、パッケージ10は、発光素子6から放射された光が実装基板1に吸収されるのを抑制することが可能となり、外部への光取り出し効率の向上による光出力の向上を図ることが可能となる。 In the package 10, when the protective layer 16 is made of a white resist layer, the light incident on the mounting substrate 1 from the light emitting element 6 is easily reflected on the surface of the protective layer 16. As a result, the package 10 can suppress the light emitted from the light emitting element 6 from being absorbed by the mounting substrate 1, and can improve the light output by improving the light extraction efficiency to the outside. It becomes.
 保護層16は、第1電気絶縁層12aの孔14の近傍に、第1導体層12bの第1端子部12baを露出させる第1開孔部16aが形成されており、第1電気絶縁層12aの周部に、第1導体層12bの第2端子部12bbを露出させる第2開孔部16bが形成されている。第1開孔部16aの開口形状は、矩形状としてある。第1開孔部16aの開口形状は、矩形状に限らず、例えば、円形状でもよい。第2開孔部16bの開口形状は、矩形状としてある。第2開孔部16bの開口形状は、矩形状に限らず、例えば、円形状でもよい。 In the protective layer 16, a first opening 16a that exposes the first terminal portion 12ba of the first conductor layer 12b is formed in the vicinity of the hole 14 of the first electric insulating layer 12a, and the first electric insulating layer 12a is formed. A second opening 16b that exposes the second terminal portion 12bb of the first conductor layer 12b is formed in the peripheral portion. The opening shape of the first opening 16a is rectangular. The opening shape of the first opening 16a is not limited to a rectangular shape, and may be, for example, a circular shape. The opening shape of the second opening portion 16b is rectangular. The opening shape of the second opening portion 16b is not limited to a rectangular shape, and may be a circular shape, for example.
 発光装置では、発光素子6が、サブマウント部材13を介して金属板11に搭載される。これにより、発光装置では、発光素子6で発生した熱の伝熱経路として、第1電気絶縁層12aを介さずにサブマウント部材13及び金属板11に伝熱させる伝熱経路が形成される。よって、パッケージ10及び発光装置は、放熱性を向上させることが可能となる。 In the light emitting device, the light emitting element 6 is mounted on the metal plate 11 via the submount member 13. Thus, in the light emitting device, a heat transfer path for transferring heat to the submount member 13 and the metal plate 11 without the first electrical insulating layer 12a is formed as a heat transfer path of the heat generated in the light emitting element 6. Therefore, the package 10 and the light emitting device can improve heat dissipation.
 サブマウント部材13の基材13aは、板状に形成されている。基材13aは、平面視形状を矩形状としてあるが、これに限らず、例えば、円形状、矩形以外の多角形状等でもよい。サブマウント部材13の平面サイズは、複数個の発光素子6を配置することができ且つこれら複数個の発光素子6を合わせたサイズよりも大きく設定してある。サブマウント部材13の平面サイズは、4.3mm×3mmとしてあるが、一例であり、特に限定するものではない。基材13aの材料としては、熱伝導率が高く、且つ、その線膨張係数が金属板11の線膨張係数と発光素子6の線膨張係数との間の値にある材料が好ましい。これにより、発光装置は、発光素子6とサブマウント部材13との接合部に熱応力に起因して割れが発生するのを抑制することが可能となる。図1に示す発光装置の例では、バンプ7が、発光素子6とサブマウント部材13との接合部となる。基材13aの材料としては、AlNを採用している。 The base material 13a of the submount member 13 is formed in a plate shape. The base material 13a has a rectangular shape in plan view, but is not limited thereto, and may be, for example, a circular shape or a polygonal shape other than a rectangular shape. The planar size of the submount member 13 is set larger than the size in which a plurality of light emitting elements 6 can be arranged and the plurality of light emitting elements 6 are combined. The planar size of the submount member 13 is 4.3 mm × 3 mm, but is an example and is not particularly limited. As the material of the base material 13 a, a material having high thermal conductivity and a linear expansion coefficient that is between the linear expansion coefficient of the metal plate 11 and the linear expansion coefficient of the light emitting element 6 is preferable. As a result, the light emitting device can suppress the occurrence of cracks due to thermal stress at the joint between the light emitting element 6 and the submount member 13. In the example of the light emitting device shown in FIG. 1, the bumps 7 serve as joints between the light emitting element 6 and the submount member 13. As the material of the base material 13a, AlN is adopted.
 サブマウント部材13の第2導体層13bは、複数個の発光素子6を直列接続可能となるように、所定のパターン形状で形成されている。第2導体層13bは、複数個の発光素子6を1つの仮想円の円周上に略等間隔で配置できるように所定のパターン形状で形成されている。第2導体層13bのパターンは、特に限定するものではない。 The second conductor layer 13b of the submount member 13 is formed in a predetermined pattern shape so that a plurality of light emitting elements 6 can be connected in series. The second conductor layer 13b is formed in a predetermined pattern shape so that the plurality of light emitting elements 6 can be arranged on the circumference of one virtual circle at substantially equal intervals. The pattern of the second conductor layer 13b is not particularly limited.
 第2導体層13bは、複数個の発光素子6を並列接続可能に構成してもよいし、直並列接続可能に構成してもよい。要するに、発光装置は、複数個の発光素子6が直列接続された構成を有していてもよいし、複数個の発光素子6が並列接続された構成を有してもよいし、複数個の発光素子6が直並列接続された構成を有してもよい。 The second conductor layer 13b may be configured such that a plurality of light-emitting elements 6 can be connected in parallel, or may be configured so that series-parallel connection is possible. In short, the light emitting device may have a configuration in which a plurality of light emitting elements 6 are connected in series, a structure in which a plurality of light emitting elements 6 are connected in parallel, or a plurality of light emitting elements 6. You may have the structure by which the light emitting element 6 was connected in series and parallel.
 サブマウント部材13は、第1接合部15を介して金属板11と接合されている。第1接合部15の材料としては、例えば、AuSn、SnAgCu等の鉛フリー半田が好ましい。ここで、第1接合部15の材料としてAuSnを採用する場合には、金属板11の表面11aaにおける接合表面に予めAu又はAgからなる金属層を形成する前処理を行うことが好ましい。第1接合部15は、導電ペーストから形成してもよい。導電ペーストとしては、例えば、銀ペースト、金ペースト、銅ペースト等を採用することができる。 The submount member 13 is joined to the metal plate 11 via the first joint portion 15. As a material of the 1st junction part 15, lead free solders, such as AuSn and SnAgCu, are preferable, for example. Here, when AuSn is adopted as the material of the first joint portion 15, it is preferable to perform a pretreatment in which a metal layer made of Au or Ag is previously formed on the joint surface of the surface 11 aa of the metal plate 11. The first joint portion 15 may be formed from a conductive paste. As the conductive paste, for example, a silver paste, a gold paste, a copper paste, or the like can be employed.
 サブマウント部材13の厚み寸法は、第2導体層13bの表面が保護層16の表面よりも金属板11から離れるように設定してある。しかして、パッケージ10は、発光素子6から側方に放射された光が、第1電気絶縁層12aの孔14の内周面を通して第1電気絶縁層12aに吸収されるのを抑制することが可能となる。 The thickness dimension of the submount member 13 is set so that the surface of the second conductor layer 13b is farther from the metal plate 11 than the surface of the protective layer 16. Accordingly, the package 10 suppresses the light emitted from the light emitting element 6 from the side from being absorbed by the first electric insulating layer 12a through the inner peripheral surface of the hole 14 of the first electric insulating layer 12a. It becomes possible.
 サブマウント部材13の厚み寸法は、0.3mm程度に設定してあるが、特に限定するものではない。ただし、パッケージ10は、サブマウント部材13の厚み寸法が大きくなるにつれて厚み方向の熱抵抗が大きくなるので、あまり大きくしすぎないように設定するのが好ましい。 The thickness dimension of the submount member 13 is set to about 0.3 mm, but is not particularly limited. However, since the thermal resistance in the thickness direction increases as the thickness dimension of the submount member 13 increases, the package 10 is preferably set so as not to be too large.
 第2導体層13bの材料としては、例えば、Au、Ag等を採用することができる。発光装置は、発光素子6がバンプ7を介して電気的に接続される場合、第2導体層13bの材料がバンプ7の材料と同じであるのが好ましい。発光装置は、バンプ7の材料がAuの場合、第2導体層13bの材料もAuであるのが好ましい。ただし、第2導体層13bは、単層膜に限らず、多層膜でもよく、この場合、最表層がバンプ7の材料と同じ材料により形成されているのが好ましい。 As the material of the second conductor layer 13b, for example, Au, Ag or the like can be employed. In the light emitting device, when the light emitting element 6 is electrically connected via the bump 7, the material of the second conductor layer 13 b is preferably the same as the material of the bump 7. In the light emitting device, when the material of the bump 7 is Au, the material of the second conductor layer 13b is also preferably Au. However, the second conductor layer 13b is not limited to a single layer film, and may be a multilayer film. In this case, it is preferable that the outermost layer is formed of the same material as that of the bump 7.
 基材13aの材料は、AlNに限らず、例えば、Si、CuW、複合SiC等を採用してもよい。基材13aの材料として絶縁体でないSiやCuW等を採用する場合には、基材13aの材料からなる母材の表面に絶縁膜を設け、その絶縁膜上に第2導体層13bをパターン形成すればよい。 The material of the base material 13a is not limited to AlN, and for example, Si, CuW, composite SiC, or the like may be employed. When Si, CuW, or the like that is not an insulator is adopted as the material of the base material 13a, an insulating film is provided on the surface of the base material made of the material of the base material 13a, and the second conductor layer 13b is patterned on the insulating film. do it.
 サブマウント部材13は、基材13aの表面において第2導体層13bが形成されていない領域に、発光素子6から放射された光を反射する反射膜を形成してもよい。これにより、サブマウント部材13は、発光素子6の側面から放射された光がサブマウント部材13に吸収されるのを、より抑制することが可能となり、外部への光取り出し効率を向上させることが可能となる。ここで、サブマウント部材13における反射膜は、例えば、Ni膜とAl膜との積層膜により構成することができる。反射膜の材料は、発光素子6の発光ピーク波長に応じて適宜選択すればよい。 The submount member 13 may form a reflection film that reflects light emitted from the light emitting element 6 in a region where the second conductor layer 13b is not formed on the surface of the base material 13a. Thereby, the submount member 13 can further suppress the light emitted from the side surface of the light emitting element 6 from being absorbed by the submount member 13, and can improve the light extraction efficiency to the outside. It becomes possible. Here, the reflective film in the submount member 13 can be composed of, for example, a laminated film of a Ni film and an Al film. The material of the reflective film may be appropriately selected according to the emission peak wavelength of the light emitting element 6.
 サブマウント部材13は、リフレクタ2が接触する可能性のある領域に電気絶縁材料からなる絶縁層を備えていてもよい。これにより、リフレクタ2が金属等により形成されている場合に、第2導体層13bとリフレクタ2とを電気的に絶縁することが可能となる。絶縁層の電気絶縁材料としては、例えば、シリコン酸化物等を採用することができる。 The submount member 13 may include an insulating layer made of an electrically insulating material in a region where the reflector 2 may come into contact. Thereby, when the reflector 2 is formed of metal or the like, the second conductor layer 13b and the reflector 2 can be electrically insulated. As the electrically insulating material of the insulating layer, for example, silicon oxide can be employed.
 発光装置は、発光素子6が厚み方向の一面側に第1電極、他面側に第2電極を有するLEDチップの場合、発光素子6とサブマウント部材13とを、例えば、SnPb、AuSn、SnAgCu等の半田や、銀ペースト等の導電ペーストを用いて接合することができる。発光素子6とサブマウント部材13の第2導体層13bとの接合は、AuSn、SnAgCu等の鉛フリー半田を用いて接合することが好ましい。この場合、第2導体層13bは、Au層、Ag層などの金属層により構成されているのが好ましい。第2導体層13bは、例えば、蒸着法、スパッタ法、CVD(Chemical Vapor Deposition)法等を利用して形成すればよい。 In the light emitting device, when the light emitting element 6 is an LED chip having a first electrode on one side in the thickness direction and a second electrode on the other side, the light emitting element 6 and the submount member 13 are, for example, SnPb, AuSn, SnAgCu. Bonding can be performed using solder such as silver or conductive paste such as silver paste. The light emitting element 6 and the second conductor layer 13b of the submount member 13 are preferably joined using a lead-free solder such as AuSn or SnAgCu. In this case, the second conductor layer 13b is preferably composed of a metal layer such as an Au layer or an Ag layer. The second conductor layer 13b may be formed using, for example, a vapor deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
 発光装置は、例えば、発光素子6が厚み方向の一面側に第1電極、他面側に第2電極を有するLEDチップの場合、サブマウント部材13が、発光素子6と金属板11との線膨張率差に起因して発光素子6に働く応力を緩和する機能を有する。サブマウント部材13は、前記応力を緩和する機能だけでなく、発光素子6で発生した熱を金属板11において発光素子6のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有する。したがって、発光装置は、発光素子6で発生した熱をサブマウント部材13及び金属板11を介して効率良く外部に放熱させることが可能となる。 In the light emitting device, for example, when the light emitting element 6 is an LED chip having a first electrode on one surface side in the thickness direction and a second electrode on the other surface side, the submount member 13 is a line between the light emitting element 6 and the metal plate 11. It has a function of relieving stress acting on the light emitting element 6 due to the difference in expansion coefficient. The submount member 13 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the light emitting element 6 to a range wider than the chip size of the light emitting element 6 in the metal plate 11. Therefore, the light emitting device can efficiently dissipate the heat generated in the light emitting element 6 to the outside through the submount member 13 and the metal plate 11.
 ワイヤ17としては、例えば、Au線を採用している。ワイヤ17としては、Au線に限らず、Al線を採用してもよい。Au線としては、例えば、線径が18μm~25μm程度の細線を採用することができる。Al線としては、例えば、線径が25μm~200μmの細線を採用することができる。ワイヤ17は、Al線を採用した場合、Au線を採用した場合に比べて、大電流を流すことが可能となる。リフレクタ2は、凹所2bの深さ寸法を、ワイヤ17が接触しないように設定してある。これにより、パッケージ10は、ワイヤ17がリフレクタ2に触れて、ワイヤ17が断線するのを抑制することができる。また、パッケージ10は、ワイヤ17とリフレクタ2とを電気的に絶縁することが可能となる。ここで、ワイヤ17としてAl線を採用した場合には、Au線を採用した場合に比べて、ワイヤ17の高さが高くなる傾向にあるので、リフレクタ2の凹所2bの深さ寸法を、より大きく設定することが好ましい。例えば、パッケージ10は、ワイヤ17がAu線の場合、凹所2bの深さ寸法を例えば0.2mm程度とすればよいが、ワイヤ17がAl線の場合、凹所2bの深さ寸法を1mmとするのが好ましい。なお、ワイヤ17としては、Au線やAl線に限らず、Al-Si線、Cu線等を採用してもよい。 As the wire 17, for example, Au wire is adopted. The wire 17 is not limited to the Au wire but may be an Al wire. As the Au wire, for example, a thin wire having a wire diameter of about 18 μm to 25 μm can be used. As the Al wire, for example, a thin wire having a wire diameter of 25 μm to 200 μm can be adopted. As for the wire 17, when an Al wire is used, a larger current can flow than when an Au wire is used. In the reflector 2, the depth dimension of the recess 2 b is set so that the wire 17 does not contact. Thereby, the package 10 can suppress that the wire 17 touches the reflector 2 and the wire 17 is disconnected. Moreover, the package 10 can electrically insulate the wire 17 and the reflector 2 from each other. Here, when the Al wire is used as the wire 17, the height of the wire 17 tends to be higher than when the Au wire is used, so the depth dimension of the recess 2 b of the reflector 2 is It is preferable to set a larger value. For example, when the wire 17 is an Au wire, the package 10 may have a depth of the recess 2b of about 0.2 mm, for example, but when the wire 17 is an Al wire, the depth of the recess 2b is 1 mm. It is preferable that Note that the wire 17 is not limited to the Au wire or the Al wire, but may be an Al—Si wire, a Cu wire, or the like.
 パッケージ10は、このパッケージ10を回路基板等の別部材に取り付けることができるように、実装基板1に、実装基板1の厚み方向に貫通する貫通孔19を設けることができる。貫通孔19の開口形状は、円形状としてある。貫通孔19の開口形状は、円形状だけに限られず、種々の形状としてもよい。パッケージ10は、実装基板1の平面視形状が矩形状であり、実装基板1の4つの角部のうち対向する2つの角部の各々の近傍に第2端子部12bbを設けてあり、残りの2つの角部の各々の近傍に貫通孔19を設けてある。これにより、パッケージ10は、螺子等により回路基板等の別部材に取り付けることも可能である。螺子としては、頭部の外径が貫通孔19の内径よりも大きく、軸部の外径が貫通孔19の内径よりも小さいものを用いればよい。螺子としては、金属製の螺子や樹脂製の螺子等を用いることができる。 The package 10 can be provided with a through hole 19 penetrating in the thickness direction of the mounting board 1 in the mounting board 1 so that the package 10 can be attached to another member such as a circuit board. The opening shape of the through hole 19 is circular. The opening shape of the through hole 19 is not limited to the circular shape, and may be various shapes. In the package 10, the mounting substrate 1 has a rectangular shape in plan view, and a second terminal portion 12 bb is provided in the vicinity of each of two opposing corners of the four corners of the mounting substrate 1. A through hole 19 is provided in the vicinity of each of the two corners. Thereby, the package 10 can also be attached to another member such as a circuit board by a screw or the like. As the screw, a screw whose outer diameter is larger than the inner diameter of the through hole 19 and whose outer diameter is smaller than the inner diameter of the through hole 19 may be used. As the screw, a metal screw, a resin screw, or the like can be used.
 パッケージ10は、2つの第2端子部12bb及び2つの貫通孔19を上述のようにレイアウトした場合、第2端子部12bbと電線との接合部にかかる応力や螺子に起因してかかる応力等に起因して実装基板1に反り等が発生するのを抑制することが可能となる。 When the two second terminal portions 12bb and the two through holes 19 are laid out as described above, the package 10 is subjected to stress applied to the joint portion between the second terminal portion 12bb and the electric wire, stress applied due to the screw, and the like. As a result, it is possible to prevent the mounting substrate 1 from being warped.
 リフレクタ2は、実装基板1から離れるにつれて開口面積が徐々に大きくなる枠状に形成されている。リフレクタ2は、発光素子6から放射される光を窓材32側へ反射する機能を有する。 The reflector 2 is formed in a frame shape in which the opening area gradually increases as the distance from the mounting substrate 1 increases. The reflector 2 has a function of reflecting light emitted from the light emitting element 6 toward the window member 32.
 リフレクタ2の材料としては、アルミニウムを採用している。リフレクタ2の形成にあたっては、例えば、A1003系の純アルミニウムの板を打ち抜き、同時又は順番にプレス成形加工を施し、その後、バリを取ると同時に表面粗さを低下させて反射率を高めるための電解研磨を行えばよい。リフレクタ2の内側面からなる反射面2aの反射率は、例えば265nmの紫外線に対して97%程度である。純アルミニウムの板の厚さは、0.6mm程度に設定してあるが、特に限定するものではない。リフレクタ2における実装基板1側の表面とリフレクタ2の反射面2aとのなす角度は、55°に設定してあるが、一例であり、特に限定するものではない。リフレクタ2の形成方法は、特に限定するものではない。また、リフレクタ2の材料は、アルミニウムに限らず、例えば、PBT(polybutylene terephthalate)等の樹脂等でもよく、この場合、枠状の樹脂成形品の内側面にアルミニウム等の金属からなる反射膜を設けるのが好ましい。 ア ル ミ ニ ウ ム Aluminum is used as the material of the reflector 2. In forming the reflector 2, for example, an A1003-based pure aluminum plate is punched and subjected to press molding processing simultaneously or sequentially, and then burrs are removed and at the same time, the surface roughness is reduced to increase the reflectivity. Polishing may be performed. The reflectance of the reflecting surface 2a formed from the inner surface of the reflector 2 is, for example, about 97% for 265 nm ultraviolet rays. The thickness of the pure aluminum plate is set to about 0.6 mm, but is not particularly limited. The angle formed between the surface of the reflector 2 on the mounting substrate 1 side and the reflecting surface 2a of the reflector 2 is set to 55 °, but is only an example and is not particularly limited. The method for forming the reflector 2 is not particularly limited. The material of the reflector 2 is not limited to aluminum, but may be, for example, a resin such as PBT (polybutylene terephthalate). In this case, a reflective film made of a metal such as aluminum is provided on the inner surface of the frame-shaped resin molded product. Is preferred.
 リフレクタ2の凹所2bは、リフレクタ2の実装基板1側の表面における外周端と内周端との両方から離れているのが好ましい。つまり、リフレクタ2の凹所2bは、リフレクタ2の実装基板1側の表面における外周部及び内周部を避けて形成してある。これにより、リフレクタ2は、剛性及び耐荷重性を向上させることが可能となる。よって、パッケージ10は、耐荷重性をより向上させることが可能となる。凹所2bは、リフレクタ2の全周に亘って形成されている。これにより、パッケージ10は、パッケージ10の組立性の向上を図ることが可能となる。凹所2bは、各ワイヤ17ごとに1つずつ設けてもよい。 The recess 2b of the reflector 2 is preferably separated from both the outer peripheral end and the inner peripheral end on the surface of the reflector 2 on the mounting substrate 1 side. That is, the recess 2b of the reflector 2 is formed avoiding the outer peripheral portion and the inner peripheral portion on the surface of the reflector 2 on the mounting substrate 1 side. Thereby, the reflector 2 can improve rigidity and load resistance. Therefore, the package 10 can further improve the load resistance. The recess 2 b is formed over the entire circumference of the reflector 2. As a result, the package 10 can improve the assemblability of the package 10. One recess 2 b may be provided for each wire 17.
 リフレクタ2は、サブマウント部材13に重なる領域では実装基板1に接合されずに接触しており、第1電気絶縁層12aに重なる領域で実装基板1に接合されている。つまり、リフレクタ2は、実装基板1側の表面における内周部が実装基板1に接合されておらず、外周部が実装基板1に接合されている。これにより、パッケージ10は、リフレクタ2とサブマウント部材13との間で熱応力が発生するのを抑制することが可能となる。リフレクタ2と実装基板1とは、第2接合部4を介して接合されている。第2接合部4は、発光素子6からの光が直接届かない場所に位置している。このため、第2接合部4の材料としては、例えば、エポキシ樹脂等を採用することができる。 The reflector 2 is in contact with the mounting substrate 1 without being joined in the region overlapping the submount member 13, and is joined to the mounting substrate 1 in the region overlapping the first electrical insulating layer 12a. That is, the reflector 2 is not bonded to the mounting substrate 1 at the inner peripheral portion of the surface on the mounting substrate 1 side, but is bonded to the mounting substrate 1 at the outer peripheral portion. Thereby, the package 10 can suppress the occurrence of thermal stress between the reflector 2 and the submount member 13. The reflector 2 and the mounting substrate 1 are bonded via the second bonding portion 4. The 2nd junction part 4 is located in the place where the light from the light emitting element 6 does not reach directly. For this reason, as a material of the 2nd junction part 4, an epoxy resin etc. are employable, for example.
 リフレクタ2は、サブマウント部材13に重なる領域のうち、少なくとも凹所2bが形成されていない部位に、第2電気絶縁層5が形成されている。第2電気絶縁層5は、シリコーン系の塗布膜や、アルミ酸化膜等を採用することができる。 In the reflector 2, the second electrical insulating layer 5 is formed in a region where the recess 2 b is not formed at least in the region overlapping the submount member 13. The second electrical insulating layer 5 can employ a silicone-based coating film, an aluminum oxide film, or the like.
 リフレクタ2は、実装基板1側とは反対の表面に、凸部2dを有している。凸部2dは、窓材32を囲み窓材32を位置決めする機能を有する。これにより、パッケージ10は、窓材32を位置決めすることが可能となる。凸部2dの突出寸法は、0.2mmに設定してあるが、特に限定するものではない。 The reflector 2 has a convex portion 2d on the surface opposite to the mounting substrate 1 side. The convex portion 2d has a function of surrounding the window member 32 and positioning the window member 32. Thereby, the package 10 can position the window member 32. Although the protrusion dimension of the convex part 2d is set to 0.2 mm, it is not specifically limited.
 凸部2dは、環状に形成されており、実装基板1から離れるにつれて開口面積が徐々に大きくなっていることが好ましい。これにより、パッケージ10は、窓材32を、より容易に、高精度に位置決めすることが可能となる。凸部2dは、環状に限らず、窓材32を囲むように窓材32の外周方向において離れて複数設けられていてもよい。 The convex portion 2d is formed in an annular shape, and it is preferable that the opening area gradually increases as the distance from the mounting substrate 1 increases. Thereby, the package 10 can position the window member 32 more easily and with high accuracy. The convex portion 2d is not limited to an annular shape, and a plurality of convex portions 2d may be provided apart from each other in the outer peripheral direction of the window member 32 so as to surround the window member 32.
 蓋3の蓋本体31は、金属により形成されている。蓋本体31の材料である金属としては、ステンレス鋼を採用している。これにより、パッケージ10は、発光素子6として紫外LEDチップを収納した場合、発光素子6からの紫外線による経時劣化を抑制することが可能となる。また、蓋本体31は、ステンレス鋼により形成することによって、放熱性、生産性及び耐食性等を向上させることが可能となる。蓋本体31の形成にあたっては、例えば、ステンレス鋼板に対してプレス成形による加工を施すことにより形成すればよい。ステンレス鋼板の厚さは、0.2mm程度に設定してあるが、特に限定するものではない。 The lid body 31 of the lid 3 is made of metal. As the metal that is the material of the lid body 31, stainless steel is adopted. Thereby, when the package 10 accommodates an ultraviolet LED chip as the light emitting element 6, it is possible to suppress deterioration with time due to ultraviolet light from the light emitting element 6. Moreover, the lid body 31 can be made of stainless steel, thereby improving heat dissipation, productivity, corrosion resistance, and the like. In forming the lid body 31, for example, the lid body 31 may be formed by processing a stainless steel plate by press molding. The thickness of the stainless steel plate is set to about 0.2 mm, but is not particularly limited.
 蓋本体31の材料である金属は、ステンレス鋼に限らず、例えば、コバール(Kovar)等を採用することもできる。コバールは、鉄にニッケル、コバルトを配合した合金である。コバールの成分比の一例は、重量%で、鉄:53.5重量%、ニッケル:29重量%、コバルト:17重量%、シリコン:0.2重量%、マンガン:0.3重量%、である。コバールの成分比は、特に限定するものではない。蓋本体31は、金属がコバールの場合、この金属からなる母体の表面を酸化することにより酸化膜が形成されたものでもよい。 The metal that is the material of the lid body 31 is not limited to stainless steel, and for example, Kovar or the like can be used. Kovar is an alloy containing iron and nickel. An example of the component ratio of Kovar is, by weight, iron: 53.5% by weight, nickel: 29% by weight, cobalt: 17% by weight, silicon: 0.2% by weight, manganese: 0.3% by weight. . The component ratio of Kovar is not particularly limited. When the metal is Kovar, the lid main body 31 may be one in which an oxide film is formed by oxidizing the surface of a base made of this metal.
 蓋本体31は、筒体31aと、筒体31aにおける実装基板1に近い側の端部である第1端部から外方へ突出した第1フランジ31bと、筒体31aにおける実装基板1から遠い側の端部である第2端部から内方へ突出した第2フランジ31cとを備える。蓋本体31は、第2フランジ31cの内周面が窓孔31dの内周面である。 The lid body 31 is far from the mounting body 1 in the cylindrical body 31a, the first flange 31b projecting outward from the first end that is the end of the cylindrical body 31a closer to the mounting board 1, and the cylindrical body 31a. And a second flange 31c protruding inward from a second end which is a side end. In the lid main body 31, the inner peripheral surface of the second flange 31c is the inner peripheral surface of the window hole 31d.
 筒体31aは、円筒状の形状としてある。筒体31aの外径は、8mmに設定してあるが、この値に限定するものではない。筒体31aは、円筒状に限らず、筒状の形状であればよく、例えば、角筒状でもよい。第1フランジ31bの外周形状は、円形状である。第1フランジ31bの外周形状は、円形状に限らず、例えば、楕円形状や多角形状等でもよい。 The cylinder 31a has a cylindrical shape. Although the outer diameter of the cylinder 31a is set to 8 mm, it is not limited to this value. The cylindrical body 31a is not limited to a cylindrical shape, and may be a cylindrical shape, for example, a rectangular cylindrical shape. The outer peripheral shape of the first flange 31b is circular. The outer peripheral shape of the first flange 31b is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
 第2フランジ31cの内周形状は、円形状である。よって、窓孔31dは、円形状の孔である。窓孔31dの内径は、3mmに設定してあるが、この値に限定するものではない。第2フランジ31cの内周形状は、円形状に限らず、例えば、楕円形状や多角形状等でもよい。 The inner peripheral shape of the second flange 31c is a circular shape. Therefore, the window hole 31d is a circular hole. The inner diameter of the window hole 31d is set to 3 mm, but is not limited to this value. The inner peripheral shape of the second flange 31c is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
 窓材32は、蓋本体31内に配置されている。また、窓材32は、蓋本体31の内側において第2フランジ31cに接合されているのが好ましい。窓材32は、第2フランジ31cにより囲まれた窓孔31dを塞ぐように第2フランジ31cに溶着されているのが好ましい。窓材32と蓋本体31とは、別途の接合材料により接合してもよい。 The window material 32 is disposed in the lid main body 31. The window member 32 is preferably joined to the second flange 31 c inside the lid body 31. The window member 32 is preferably welded to the second flange 31c so as to close the window hole 31d surrounded by the second flange 31c. The window member 32 and the lid main body 31 may be joined by a separate joining material.
 窓材32は、透過対象の波長の光に対する透過率が70%以上であるのが好ましく、80%以上であるのがより好ましい。発光素子6として紫外LEDチップを想定している場合には、窓材32の材料として、発光素子6から放射される紫外線に対する透過率が80%以上の硼珪酸ガラスを採用することが好ましい。このような硼珪酸ガラスとしては、例えば、SCHOTT社製の8337Bを採用することができる。 The window material 32 preferably has a transmittance with respect to light having a wavelength to be transmitted of 70% or more, and more preferably 80% or more. When an ultraviolet LED chip is assumed as the light emitting element 6, it is preferable to employ borosilicate glass having a transmittance of 80% or more for the ultraviolet rays emitted from the light emitting element 6 as the material of the window member 32. As such borosilicate glass, for example, 8337B manufactured by SCHOTT can be adopted.
 これにより、発光素子6として紫外LEDチップを備えた発光装置は、発光素子6から放射される光である紫外光に対する窓材32の透過率を80%以上とすることが可能となる。 Thereby, in the light emitting device including the ultraviolet LED chip as the light emitting element 6, the transmittance of the window member 32 with respect to the ultraviolet light that is the light emitted from the light emitting element 6 can be 80% or more.
 蓋3は、蓋本体31の材料である金属と窓材32の材料である硼珪酸ガラスとの線膨張係数差が小さいほうが好ましい。これにより、蓋3は、窓材32と蓋本体31との線膨張係数差に起因して窓材32や蓋本体31と窓材32との境界付近に発生する応力を低減することが可能となる。 The lid 3 preferably has a smaller difference in linear expansion coefficient between the metal that is the material of the lid body 31 and the borosilicate glass that is the material of the window material 32. Thereby, the lid 3 can reduce the stress generated near the boundary between the window material 32 and the lid body 31 and the window material 32 due to the difference in the linear expansion coefficient between the window material 32 and the lid body 31. Become.
 発光素子6が可視光を放射するLEDチップや半導体レーザチップ等の場合、窓材32の材料は、硼珪酸ガラスに限らず、他のガラスや、シリコーン樹脂、アクリル樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料等を採用してもよい。 When the light emitting element 6 is an LED chip or a semiconductor laser chip that emits visible light, the material of the window material 32 is not limited to borosilicate glass, but other glass, silicone resin, acrylic resin, glass, organic components, and inorganic An organic / inorganic hybrid material in which components are mixed and bonded at the nm level or molecular level may be used.
 また、窓材32は、発光素子6からの光を波長変換する蛍光体等の波長変換材料を含有させてもよい。 Further, the window material 32 may contain a wavelength conversion material such as a phosphor that converts the wavelength of light from the light emitting element 6.
 蓋3は、第1フランジ31bが、第2接合部4を介して実装基板1に接合されている。第2接合部4の材料としては、例えば、エポキシ樹脂等を採用することができる。パッケージ10は、蓋3の蓋本体31が第1フランジ31bを備えているので、封止代を広くとることが可能となり、気密性を向上させることが可能となる。第2接合部4は、発光素子6からの光が直接届かない場所に位置している。このため、第2接合部4の材料としては、例えば、エポキシ樹脂等を採用することができる。よって、パッケージ10は、蓋本体31がステンレス鋼により形成されている場合、蓋本体31と第2接合部4との接着力をより高めることが可能となる。 The first flange 31 b of the lid 3 is joined to the mounting substrate 1 via the second joint 4. As a material of the second joint portion 4, for example, an epoxy resin or the like can be employed. In the package 10, since the lid body 31 of the lid 3 includes the first flange 31b, it is possible to widen the sealing allowance and improve the airtightness. The 2nd junction part 4 is located in the place where the light from the light emitting element 6 does not reach directly. For this reason, as a material of the 2nd junction part 4, an epoxy resin etc. are employable, for example. Therefore, when the lid body 31 is formed of stainless steel, the package 10 can further increase the adhesive force between the lid body 31 and the second joint portion 4.
 窓材32は、レンズであり、非球面レンズ部32aと、非球面レンズ部32aの外周部から全周に亘って外方に突出したベース部32bとを有する。非球面レンズ部32aは、両凸型の非球面レンズ状に形成されている。本実施形態のパッケージ10では、非球面レンズ部32aがレンズ部を構成している。 ベース部32bは、円環状に形成されている。ベース部32bは、厚み寸法が一様であるのが好ましい。非球面レンズ部32aは、第1レンズ面32aaと、第2レンズ面32abとを備える。非球面レンズ部32aは、第1レンズ面32aaが蓋本体31の内側に位置し、第2レンズ面32abが蓋本体31の外側に位置している。第1レンズ面32aaは、非球面の第1凸曲面である。第2レンズ面32abは、非球面の第2凸曲面である。第1凸曲面及び第2凸曲面は、それぞれ、曲率が連続的に変化している。第1レンズ面32aaと第2レンズ面32abとは、異なる形状としてあるが、これに限らず、同じ形状でもよい。 The window member 32 is a lens, and includes an aspheric lens portion 32a and a base portion 32b protruding outward from the outer peripheral portion of the aspheric lens portion 32a. The aspheric lens portion 32a is formed in a biconvex aspheric lens shape. In the package 10 of this embodiment, the aspherical lens part 32a constitutes a lens part. The base portion 32b is formed in an annular shape. The base portion 32b preferably has a uniform thickness dimension. The aspheric lens portion 32a includes a first lens surface 32aa and a second lens surface 32ab. In the aspherical lens portion 32 a, the first lens surface 32 aa is located inside the lid body 31, and the second lens surface 32 ab is located outside the lid body 31. The first lens surface 32aa is an aspheric first convex curved surface. The second lens surface 32ab is an aspherical second convex curved surface. The curvatures of the first convex curved surface and the second convex curved surface change continuously. Although the first lens surface 32aa and the second lens surface 32ab have different shapes, the shape is not limited to this and may be the same.
 レンズを構成する窓材32は、非球面レンズ部32aが窓孔31dに配置され、ベース部32bが第2フランジ31cに接合されている。ここで、ベース部32bは、第2フランジ31cの厚み方向の一面の全周に亘って接合されているのが好ましい。ベース部32bは、非球面レンズ部32aの径方向に沿った方向の幅寸法が大きいほうが好ましい。要するに、蓋3は、ベース部32bの幅寸法と第2フランジ31cの幅寸法とが略同じにすることもできる。これにより、蓋3は、接合信頼性及び気密性を向上させることが可能となる。ここで、蓋3の気密性とは、蓋本体31と窓材32との接合部位の気密性を意味する。 The window member 32 constituting the lens has an aspheric lens portion 32a disposed in the window hole 31d and a base portion 32b joined to the second flange 31c. Here, it is preferable that the base part 32b is joined over the entire circumference of one surface in the thickness direction of the second flange 31c. The base portion 32b preferably has a larger width dimension in the direction along the radial direction of the aspheric lens portion 32a. In short, the lid 3 can have substantially the same width dimension of the base portion 32b and the width dimension of the second flange 31c. Thereby, the lid | cover 3 becomes possible [improving joining reliability and airtightness]. Here, the airtightness of the lid 3 means the airtightness of the joint portion between the lid main body 31 and the window member 32.
 よって、パッケージ10は、気密性を高めることが可能となり、長寿命化を図ることが可能となる。 Therefore, the package 10 can improve the airtightness and can extend the life.
 パッケージ10は、窓材32と第2フランジ31cとを接合せずに、図4に示す変形例1のように、蓋3の第2フランジ31cとリフレクタ2との間に、リング状のパッキン8と窓材32のベース部32bとを重ねて挟んだ構成としてもよい。これにより、パッケージ10は、窓材32と第2フランジ31cとを接合せずに、気密性を確保することが可能となる。パッキン8の材料としては、フッ素系樹脂等を採用するのが好ましい。これにより、パッケージ10は、発光素子6が紫外LEDチップの場合に、発光素子6からの紫外線によりパッキン8が劣化するのを抑制することが可能となる。フッ素系樹脂としては、例えば、テフロン(登録商標)を採用することができる。 The package 10 does not join the window member 32 and the second flange 31c, and instead of the ring-shaped packing 8 between the second flange 31c of the lid 3 and the reflector 2, as in Modification 1 shown in FIG. And a base portion 32b of the window member 32 may be sandwiched and overlapped. Thereby, the package 10 can ensure airtightness without joining the window material 32 and the second flange 31c. As a material for the packing 8, it is preferable to employ a fluorine-based resin or the like. Thereby, the package 10 can suppress the deterioration of the packing 8 due to the ultraviolet rays from the light emitting element 6 when the light emitting element 6 is an ultraviolet LED chip. As the fluororesin, for example, Teflon (registered trademark) can be adopted.
 レンズを構成する窓材32の形状は、特に限定するものではない。例えば、パッケージ10における窓材32は、非球面レンズ部32aが両凸型の非球面レンズ状に形成されたものに限らない。パッケージ10における窓材32は、例えば、図5や図6に示すように、非球面レンズ部32aが平凸型の非球面レンズ状に形成されたものでもよい。図5に示した第2変形例のパッケージ10では、第1レンズ面32aaを非球面の凸曲面とし、第2レンズ面32abを平面としてある。また、図6に示した第3変形例のパッケージ10では、第1レンズ面32aaを平面とし、第2レンズ面32abを非球面の凸曲面としてある。 The shape of the window material 32 constituting the lens is not particularly limited. For example, the window material 32 in the package 10 is not limited to the aspherical lens portion 32a formed in a biconvex aspherical lens shape. For example, as shown in FIGS. 5 and 6, the window member 32 in the package 10 may have an aspheric lens portion 32 a formed into a plano-convex aspheric lens shape. In the package 10 of the second modification shown in FIG. 5, the first lens surface 32aa is an aspherical convex curved surface, and the second lens surface 32ab is a flat surface. In the package 10 of the third modified example shown in FIG. 6, the first lens surface 32aa is a flat surface, and the second lens surface 32ab is an aspheric convex curved surface.
 また、パッケージ10は、実装基板1に実装する発光素子6の個数が複数個に限らず、図7に示す変形例4のように1個でもよい。パッケージ10に収納する発光素子6の個数が1個の場合、サブマウント部材13の第2導体層13bは、発光素子6に給電可能となるようにパターン形成されていればよい。 Further, the number of the light emitting elements 6 to be mounted on the mounting substrate 1 is not limited to a plurality, and the package 10 may be one as in Modification 4 shown in FIG. When the number of the light emitting elements 6 housed in the package 10 is one, the second conductor layer 13b of the submount member 13 only needs to be patterned so that power can be supplied to the light emitting elements 6.
 図4に示した変形例1のように蓋3の第2フランジ31cとリフレクタ2との間に、リング状のパッキン8と窓材32のベース部32bとを重ねて挟んだ構成は、変形例2~4のような窓材32の場合や窓材32が平板状の場合にも採用することができる。 A configuration in which the ring-shaped packing 8 and the base portion 32b of the window member 32 are overlapped and sandwiched between the second flange 31c of the lid 3 and the reflector 2 as in Modification 1 shown in FIG. The present invention can also be applied to the case of the window material 32 such as 2 to 4 or when the window material 32 is flat.
 以上、本願発明の構成を、実施形態や変形例に基づいて説明したが、本願発明の技術思想が実現できる限り、実施形態や変形例の構成だけに限定されるものではない。また、実施形態及び変形例に記載した材料、数値等は、好ましいものを例示しているだけであり、それに限定するものではない。更に、本願発明は、その技術的思想の範囲を逸脱しない範囲で、構成に適宜変更を加えることが可能である。 The configuration of the present invention has been described above based on the embodiment and the modification. However, the configuration is not limited to the configuration of the embodiment and the modification as long as the technical idea of the present invention can be realized. In addition, the materials, numerical values, and the like described in the embodiments and the modifications are merely preferable examples and are not limited thereto. Furthermore, the present invention can be appropriately modified in configuration without departing from the scope of its technical idea.

Claims (7)

  1.  発光素子を実装する実装基板と、前記実装基板の一表面側で前記実装基板における前記発光素子の実装領域を囲んで配置されたリフレクタと、前記実装基板の前記一表面側で前記リフレクタを覆い前記実装基板に接合された蓋とを備え、
     前記蓋は、蓋本体と、前記蓋本体において前記実装領域の前方に形成された窓孔を塞ぐように前記蓋本体に接合された光取り出し用の窓材とを備え、
     前記実装基板は、金属板と、前記金属板の前記一表面側に形成された電気絶縁層と、前記電気絶縁層に形成され前記金属板の前記一表面の一部を露出させる孔と、前記電気絶縁層上に形成された給電用の第1導体層と、前記孔の内側に配置され前記金属板の前記一表面側に接合されたサブマウント部材とを備え、
     前記サブマウント部材が、前記電気絶縁層よりも熱伝導率が高く且つ電気絶縁性を有する基材と、前記基材における前記金属板側とは反対の表面側に形成された給電用の第2導体層とを備え、
     前記第1導体層は、前記実装基板における前記蓋の投影領域と当該投影領域の外側とに跨って形成されており、前記リフレクタの投影領域に、内部接続用の第1端子部を有し、前記蓋の外側に、外部接続用の第2端子部を有し、
     前記第2導体層は、前記実装領域と前記実装基板における前記リフレクタの投影領域とに跨って形成されている配線部を有し、
     前記配線部と、前記第1端子部とが、ワイヤを介して電気的に接続されており、
     前記リフレクタは、前記実装基板との対向面に、前記ワイヤを収納する凹所が形成されていることを特徴とする発光素子用パッケージ。
    A mounting substrate on which the light emitting element is mounted; a reflector disposed on one surface side of the mounting substrate so as to surround the mounting region of the light emitting element; and the reflector covering the reflector on the one surface side of the mounting substrate. A lid bonded to the mounting substrate,
    The lid includes a lid body and a light extraction window member joined to the lid body so as to close a window hole formed in front of the mounting region in the lid body.
    The mounting board includes a metal plate, an electric insulating layer formed on the one surface side of the metal plate, a hole formed in the electric insulating layer and exposing a part of the one surface of the metal plate, A power supply first conductor layer formed on the electrical insulating layer, and a submount member disposed inside the hole and joined to the one surface side of the metal plate,
    The submount member has a base material having a higher thermal conductivity than the electric insulating layer and an electric insulating property, and a second power supply formed on the surface side of the base material opposite to the metal plate side. A conductor layer,
    The first conductor layer is formed across the projection area of the lid and the outside of the projection area on the mounting substrate, and has a first terminal portion for internal connection in the projection area of the reflector. A second terminal portion for external connection on the outside of the lid;
    The second conductor layer has a wiring portion formed across the mounting region and a projection region of the reflector in the mounting substrate,
    The wiring portion and the first terminal portion are electrically connected via a wire,
    The light emitting device package according to claim 1, wherein the reflector is formed with a recess for housing the wire on a surface facing the mounting substrate.
  2.  前記凹所は、前記リフレクタの前記実装基板側の表面における外周端と内周端との両方から離れていることを特徴とする請求項1記載の発光素子用パッケージ。 2. The light emitting element package according to claim 1, wherein the recess is separated from both an outer peripheral end and an inner peripheral end of the surface of the reflector on the mounting substrate side.
  3.  前記リフレクタは、前記サブマウント部材に重なる領域では前記実装基板に接合されずに接触しており、前記電気絶縁層に重なる領域で前記実装基板に接合されていることを特徴とする請求項1又は2記載の発光素子用パッケージ。 2. The reflector according to claim 1, wherein the reflector is in contact with the mounting substrate without being bonded to the mounting substrate in a region overlapping with the submount member, and is bonded to the mounting substrate in a region overlapping with the electrical insulating layer. 2. A package for a light emitting device according to 2.
  4.  前記窓材は、レンズであり、前記リフレクタは、前記実装基板側とは反対の表面に、前記レンズを囲み前記レンズを位置決めする凸部を有することを特徴とする請求項1乃至3のいずれか1項に記載の発光素子用パッケージ。 The said window material is a lens, and the said reflector has the convex part which surrounds the said lens and positions the said lens on the surface opposite to the said mounting substrate side. 2. A package for a light-emitting element according to item 1.
  5.  前記凸部は、環状であり、前記実装基板から離れるにつれて開口面積が徐々に大きくなっていることを特徴とする請求項4記載の発光素子用パッケージ。 5. The light emitting element package according to claim 4, wherein the convex portion is annular, and the opening area gradually increases with distance from the mounting substrate.
  6.  前記蓋本体は、筒体と、前記筒体における前記実装基板に近い側の端部である第1端部から外方へ突出した第1フランジと、前記筒体における前記実装基板から遠い側の端部である第2端部から内方へ突出した第2フランジとを備え、前記第2フランジの内周面が前記窓孔の内周面であり、前記レンズは、レンズ部と、前記レンズ部の外周部から全周に亘って外方に突出したベース部とを有し、前記レンズ部が前記窓孔に配置され、前記ベース部が前記第2フランジに接合されていることを特徴とする請求項4又は5記載の発光素子用パッケージ。 The lid body includes a cylinder, a first flange projecting outward from a first end that is an end of the cylinder close to the mounting board, and a side of the cylinder that is far from the mounting board. A second flange projecting inward from a second end that is an end, an inner peripheral surface of the second flange is an inner peripheral surface of the window hole, and the lens includes a lens portion, the lens And a base portion protruding outward from the outer periphery of the portion, the lens portion is disposed in the window hole, and the base portion is joined to the second flange. The light emitting element package according to claim 4 or 5.
  7.  請求項1乃至6のいずれか1項に記載の前記発光素子用パッケージと、前記発光素子とを備えることを特徴とする発光装置。 A light emitting device comprising: the light emitting element package according to any one of claims 1 to 6; and the light emitting element.
PCT/JP2013/006148 2013-01-25 2013-10-16 Package for light emitting elements and light emitting device using same WO2014115202A1 (en)

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