WO2020026692A1 - Light-emitting semiconductor device - Google Patents

Abstract

This light-emitting semiconductor device A1 comprises: a semiconductor light emitting element 4; a support 1 that has a base 2 and an electrically conductive part 3, and that supports the semiconductor light emitting element 4; and a cover 5 that overlaps the semiconductor light emitting element 4 in the z axis direction, and that transmits light from the semiconductor light emitting element 4, wherein the cover 5 includes a base layer 51 that transmits light from the semiconductor light emitting element 4 and that is placed on the base 51 layer. By using such a configuration, it is possible to suppress direct viewing of light from the semiconductor light emitting element due to damage to the cover.

Description

Semiconductor light emitting device

The present disclosure relates to a semiconductor light emitting device.

半導体 A semiconductor light emitting device including a semiconductor light emitting element as a light source has been widely proposed. Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes a semiconductor laser element, which is an example of a semiconductor light emitting element, a substrate on which the semiconductor light emitting element is mounted, a case surrounding the semiconductor light emitting element, and a light-transmitting cover for closing the case. And

JP-A-2015-123378

光 It is not preferable that the light from the semiconductor light emitting element is directly visually recognized by the naked eye. In the case where the cover has a diffusion function or the like, damage to the cover or the like may lead to direct visual recognition of light from the semiconductor light emitting device.

The present disclosure has been conceived under the circumstances described above, and it is an object of the present disclosure to provide a semiconductor light emitting device capable of suppressing direct viewing of light from a semiconductor light emitting element caused by damage to a cover. Make it an issue.

A semiconductor light emitting device provided by the present disclosure includes a semiconductor light emitting element, a base member and a conductive portion, a support that supports the semiconductor light emitting element, and a semiconductor that overlaps with the semiconductor light emitting element when viewed in a first direction. And a cover for transmitting light from the light emitting element. The cover includes a base layer for transmitting light from the semiconductor light emitting element and a conductive layer disposed on the base layer.

Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. 1 is a plan view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 1 is a main part plan view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. 1 is a bottom view illustrating a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 5 is a sectional view taken along line VV in FIG. 2. FIG. 6 is a cross-sectional view along the line VI-VI in FIG. 2. FIG. 7 is a sectional view taken along the line VII-VII in FIG. 2. FIG. 7 is a sectional view taken along the line VIII-VIII in FIG. 2. FIG. 3 is a sectional view taken along line IX-IX in FIG. 2. FIG. 3 is an enlarged sectional view of a main part along line XX of FIG. 2. 1 is an enlarged sectional perspective view showing a semiconductor light emitting element of a semiconductor light emitting device according to a first embodiment of the present disclosure. FIG. 2 is an enlarged sectional view of a main part showing a semiconductor light emitting element of the semiconductor light emitting device according to the first embodiment of the present disclosure. 1 is a system configuration diagram illustrating an example of an electronic device using a semiconductor light emitting device according to a first embodiment of the present disclosure. It is a principal part expanded sectional view which shows the modification of a cover. FIG. 4 is a plan view illustrating a first modification of the semiconductor light emitting device according to the first embodiment of the present disclosure. It is a top view showing the semiconductor light emitting device concerning a 2nd embodiment of this indication. FIG. 17 is a sectional view taken along the line XVII-XVII in FIG. 16. FIG. 11 is a cross-sectional view illustrating a first modification of the semiconductor light emitting device according to the second embodiment of the present disclosure. It is a top view showing the semiconductor light emitting device concerning a 3rd embodiment of this indication. FIG. 20 is a sectional view taken along the line XX-XX in FIG. It is a sectional view showing the semiconductor light emitting device concerning a fourth embodiment of the present disclosure. It is a sectional view showing the semiconductor light emitting device concerning a 5th embodiment of this indication. It is a top view showing the semiconductor light emitting device concerning a 6th embodiment of this indication. FIG. 24 is a cross-sectional view of FIG. 23 taken along the line XXIV-XXIV.

Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

用語 Terms such as “first”, “second”, and “third” in the present disclosure are used simply as labels and are not necessarily intended to permutate those objects.

<First embodiment>
1 to 12 show a semiconductor light emitting device according to a first embodiment of the present disclosure. The semiconductor light emitting device A1 of the present embodiment includes a support 1, a semiconductor light emitting element 4, a cover 5, wires 61 and 62, and a sealing resin 71.

FIG. 1 is a perspective view showing the semiconductor light emitting device A1. FIG. 2 is a plan view showing the semiconductor light emitting device A1. FIG. 3 is a main part plan view showing the semiconductor light emitting device A1. FIG. 4 is a bottom view showing the semiconductor light emitting device A1. FIG. 5 is a sectional view taken along line VV in FIG. FIG. 6 is a sectional view taken along the line VI-VI in FIG. FIG. 7 is a sectional view taken along the line VII-VII of FIG. FIG. 8 is a sectional view taken along line VIII-VIII in FIG. FIG. 9 is a sectional view taken along the line IX-IX of FIG. FIG. 10 is an enlarged sectional view of a main part along line XX of FIG. FIG. 11 is an enlarged sectional perspective view showing the semiconductor light emitting element 4 of the semiconductor light emitting device A1. FIG. 12 is an enlarged sectional view of a main part showing the semiconductor light emitting element 4 of the semiconductor light emitting device A1. In these drawings, the z direction corresponds to a first direction of the present disclosure, the y direction corresponds to a second direction of the present disclosure, and the x direction corresponds to a third direction of the present disclosure.

The support 1 of the present embodiment includes a first surface 11, a second surface 12, a third surface 13, a fourth surface 14, a fifth surface 15, a sixth surface 16, a seventh surface 17, an eighth surface 18, It has ninth surface 19, tenth surface 1a, eleventh surface 1b, and twelfth surface 1c.

The first surface 11 is a surface that faces one side in the z direction (upper side in FIG. 5). The second surface 12 is a surface facing the other side in the z direction opposite to the first surface 11 (a lower side in the drawing in FIG. 5). The third surface 13 is a surface facing one side in the z direction (upper side in the drawing in FIG. 5) similarly to the first surface 11, and is more distant from the second surface 12 than the first surface 11. The fourth surface 14 is interposed between the first surface 11 and the third surface 13, and in the present embodiment, is connected to the first surface 11 and the third surface 13. The fourth surface 14 is an annular shape surrounding the first surface 11 when viewed in the z direction. The fourth surface 14 is inclined such that the distance between the opposing portions increases in the z direction from the first surface 11 to the third surface 13.

The fifth surface 15 is located between the first surface 11 and the third surface 13 in the z direction, and faces one side in the y direction (the right side in FIGS. 6 to 9). In the illustrated example, the fifth surface 15 is connected to the first surface 11 and the third surface 13. The sixth surface 16 is located between the first surface 11 and the third surface 13 in the z direction, and faces the other side in the y direction (the left side in FIGS. 6 to 9). In the illustrated example, the sixth surface 16 is connected to the first surface 11 and the third surface 13.

The seventh surface 17 is located between the first surface 11 and the third surface 13 in the z direction, and faces one side in the x direction (left side in FIG. 5). In the illustrated example, the seventh surface 17 is connected to the first surface 11 and the third surface 13. The eighth surface 18 is located between the first surface 11 and the third surface 13 in the z direction, and faces the other side in the x direction (the right side in FIG. 5). In the illustrated example, the eighth surface 18 is connected to the first surface 11 and the third surface 13.

９The ninth surface 19 faces one side in the z direction, and is located between the first surface 11 and the third surface 13 in the z direction. In the illustrated example, the ninth surface 19 is provided at the same position as the first surface 11 in the z direction. The ninth surface 19 is disposed on the other side in the x direction with respect to the first surface 11 when viewed in the z direction (the right side in FIGS. 3 and 5). The tenth surface 1a is interposed between the ninth surface 19 and the third surface 13 in the z direction, and is connected to the ninth surface 19 and the third surface 13 in the present embodiment. The tenth surface 1a has an annular shape surrounding the ninth surface 19 when viewed in the z direction. The tenth surface 1a is inclined such that the distance between the opposing portions increases in the z direction from the ninth surface 19 toward the third surface 13.

１１The eleventh surface 1b faces one side in the z direction, and is located between the first surface 11 and the third surface 13 in the z direction. In the illustrated example, the eleventh surface 1b is provided at the same position as the first surface 11 in the z direction. The eleventh surface 1b is arranged on the other side in the x direction with respect to the first surface 11 when viewed in the z direction (the right side in FIGS. 3 and 5), and on the other side in the y direction with respect to the ninth surface 19. Are located. The twelfth surface 1c is interposed between the eleventh surface 1b and the third surface 13 in the z direction, and is connected to the eleventh surface 1b and the third surface 13 in the present embodiment. The twelfth surface 1c is an annular shape surrounding the eleventh surface 1b when viewed in the z direction. The twelfth surface 1c is inclined so that the distance between the opposing portions increases from the eleventh surface 1b toward the third surface 13 in the z direction.

構成 The configuration of the support 1 is not particularly limited, and in the present embodiment, the support 1 includes the base material 2 and the conductive portion 3.

The base material 2 is made of an insulating material, and for example, an epoxy resin, a silicone resin, or the like is appropriately used. The substrate 2 of the present embodiment includes a first surface 21, a second surface 22, a third surface 23, a fourth surface 24, a fifth surface 25, a sixth surface 26, a seventh surface 27, an eighth surface 28, It has a tenth surface 2a and a twelfth surface 2c.

The first surface 21 faces one side in the z direction and forms a part of the first surface 11. The second surface 22 faces the other side in the z direction, and forms a part of the second surface 12. The third surface 23 faces one side in the z direction, and forms the third surface 13. The fourth surface 24 is located between the first surface 21 and the third surface 23 in the z direction, and forms the fourth surface 14. The fifth surface 25 faces one side in the y direction, and forms the fifth surface 15. The sixth surface 16 faces the other side in the y direction, and forms the sixth surface 16. The seventh surface 27 faces one side in the x direction, and forms the seventh surface 17. The eighth surface 28 faces the other side in the x direction, and forms the eighth surface 18. The tenth surface 2a is located between the ninth surface 19 and the third surface 13 (third surface 23) in the z direction, and forms the tenth surface 1a. The twelfth surface 2c is located between the eleventh surface 1b and the third surface 13 (third surface 23) in the z direction, and forms the twelfth surface 1c.

The conductive portion 3 forms a conduction path between the semiconductor light emitting element 4 and the outside of the semiconductor light emitting device A1. In the present embodiment, the first lead 31, the second lead 32, the third lead 33, and the fourth Includes leads 34. The first lead 31, the second lead 32, the third lead 33, and the fourth lead 34 are made of a metal such as Cu, Fe, and Ni.

The first lead 31 has a first surface 311, a second surface 312, a main portion 315, an edge portion 316, and a plurality of extending portions 317. The first surface 311 is a surface facing one side in the z direction, and forms a part of the first surface 11. When viewed in the z direction, a part of the first surface 311 is exposed in a region surrounded by the fourth surface 14. The second surface 312 is a surface facing the other side in the z direction opposite to the first surface 311 and forms a part of the second surface 12. In the illustrated example, the second surface 312 is smaller than the first surface 311 when viewed in the z direction, and is included in the first surface 311.

The main portion 315 is a portion having the first surface 311 and the second surface 312, and is a portion where both the first surface 311 and the second surface 312 overlap when viewed in the z direction. The edge portion 316 is a portion surrounding the main portion 315 when viewed in the z direction, and has a part of the first surface 311. The other side in the z direction of the edge 316 is covered with the base material 2. The plurality of extending portions 317 extend outward from the edge 316 when viewed in the z direction. The extension part 317 has a part of the first surface 311. The other side in the z direction of the extension portion 317 is covered with the base material 2. In the illustrated example, the first lead 31 has three extensions 317. One extension portion 317 has reached the fifth surface 25 of the base material 2, has an end surface flush with the fifth surface 25, and is exposed from the fifth surface 25. The other extension 317 reaches the sixth surface 26 of the base material 2, has an end surface flush with the sixth surface 26, and is exposed from the sixth surface 26. Still another extension 317 has reached the seventh surface 27 of the base material 2, has an end surface flush with the seventh surface 27, and is exposed from the seventh surface 27.

The second lead 32 is spaced apart from the first lead 31 on the other side in the x direction. The second lead 32 has a first surface 321, a second surface 322, a main portion 325, an edge 326, and a plurality of extending portions 327. The first surface 321 is a surface facing one side in the z direction, and forms a part of the first surface 11. When viewed in the z direction, a part of the first surface 321 is exposed in a region surrounded by the fourth surface 14. The second surface 322 is a surface facing the other side in the z direction opposite to the first surface 321 and forms a part of the second surface 12. In the illustrated example, the second surface 322 is smaller than the first surface 321 when viewed in the z direction, and is included in the first surface 321.

The main portion 325 is a portion having the first surface 321 and the second surface 322, and is a portion where both the first surface 321 and the second surface 322 overlap in the z direction. The edge portion 326 is a portion surrounding the main portion 325 when viewed in the z direction, and has a part of the first surface 321. The other side in the z direction of the edge 326 is covered with the base material 2. The plurality of extending portions 327 extend outward from the edge 326 in the z direction. The extension part 327 has a part of the first surface 321. The other side of the extension 327 in the z direction is covered with the base material 2. In the illustrated example, the second lead 32 has two extensions 327. One extension 327 reaches the fifth surface 25 of the base material 2, has an end surface flush with the fifth surface 25, and is exposed from the fifth surface 25. The other extension 327 reaches the sixth surface 26 of the base material 2, has an end surface flush with the sixth surface 26, and is exposed from the sixth surface 26.

The third lead 33 is arranged on the other side in the x direction with respect to the second lead 32. The third lead 33 has a first surface 331, a second surface 332, a main portion 335, an edge portion 336, and a plurality of extending portions 337. The first surface 331 is a surface facing one side in the z direction, and forms the ninth surface 19. When viewed in the z direction, a part of the first surface 331 is exposed in a region surrounded by the tenth surface 1a (the tenth surface 2a). The second surface 332 is a surface facing the other side in the z direction on the opposite side to the first surface 331 and forms a part of the second surface 12. In the illustrated example, the second surface 332 is smaller than the first surface 331 when viewed in the z direction, and is included in the first surface 331.

The main portion 335 is a portion having the first surface 331 and the second surface 332, and is a portion where both the first surface 331 and the second surface 332 overlap in the z direction. The edge portion 336 is a portion surrounding the main portion 335 when viewed in the z direction, and has a part of the first surface 331. The other side of the edge 336 in the z direction is covered with the base material 2. The plurality of extending portions 337 extend outward from the edge 336 when viewed in the z direction. The extension 337 has a part of the first surface 331. The other side in the z direction of the extension 337 is covered with the base material 2. In the illustrated example, the third lead 33 has two extending portions 337. One extension 337 has reached the fifth surface 25 of the base material 2, has an end surface flush with the fifth surface 25, and is exposed from the fifth surface 25. The other extension 337 has reached the eighth surface 28 of the substrate 2, has an end surface flush with the eighth surface 28, and is exposed from the eighth surface 28.

(4) The fourth lead 34 is spaced apart from the second lead 32 on the other side in the x direction, and is spaced apart from the third lead 33 on the other side in the y direction. The fourth lead 34 has a first surface 341, a second surface 342, a main portion 345, an edge 346, and a plurality of extending portions 347. The first surface 341 is a surface that faces one side in the z direction, and constitutes an eleventh surface 1b. When viewed in the z direction, a part of the first surface 341 is exposed in a region surrounded by the twelfth surface 1c (the twelfth surface 1c). The second surface 342 is a surface facing the other side in the z direction opposite to the first surface 341 and forms a part of the second surface 12. In the illustrated example, the second surface 342 is smaller than the first surface 341 when viewed in the z direction, and is included in the first surface 341.

The main portion 345 is a portion having the first surface 341 and the second surface 342, and is a portion where both the first surface 341 and the second surface 342 overlap when viewed in the z direction. The edge portion 346 is a portion surrounding the main portion 345 when viewed in the z direction, and has a part of the first surface 341. The other side in the z direction of the edge 346 is covered with the base material 2. The plurality of extending portions 347 extend outward from the edge 346 when viewed in the z direction. The extension part 347 has a part of the first surface 341. The other side in the z direction of the extension 347 is covered with the base material 2. In the illustrated example, the fourth lead 34 has two extensions 347. One extension 347 reaches the sixth surface 26 of the base material 2, has an end surface flush with the sixth surface 26, and is exposed from the sixth surface 26. The other extension 347 reaches the eighth surface 28 of the base material 2, has an end surface flush with the eighth surface 28, and is exposed from the eighth surface 28.

The semiconductor light emitting element 4 is a light source in the semiconductor light emitting device A1, and emits light in a predetermined wavelength band. The specific configuration of the semiconductor light emitting device 4 is not particularly limited, and may be a semiconductor laser device, an LED device, or the like. In the present embodiment, the semiconductor light emitting device 4 is a semiconductor laser device, and employs a VCSEL device. The semiconductor light emitting element 4 is die-bonded to the first surface 311 (first surface 11) of the first lead 31 of the conductive part 3 by a conductive bonding material 48. The conductive bonding material 48 is, for example, an Ag paste or a solder. The light from the semiconductor light emitting element 4 is emitted to one side in the z direction.

半導体 As shown in FIG. 3, the semiconductor light emitting element 4 is provided with the first electrode 41 and a plurality of light emitting regions 460 in plan view. The plurality of light emitting regions 460 are discretely arranged in regions other than the first electrode 41 in a plan view of the semiconductor light emitting device 4.

As shown in FIGS. 11 and 12, the semiconductor light emitting device 4 of the present example has a first electrode 41, a second electrode 42, a second substrate 451, a fourth semiconductor layer 452, an active layer 453, a fifth semiconductor layer 454, A plurality of light emitting regions 460 are provided, including a current confinement layer 455, an insulating layer 456, and a conductive layer 457. It should be noted that the configuration example shown in the figure is an example of a VCSEL element as the semiconductor light emitting element 4, and is not limited to this configuration. FIG. 12 shows an enlarged portion including one light emitting region 460.

The second substrate 451 is made of a semiconductor. The semiconductor forming the second substrate 451 is, for example, n-type GaAs. The semiconductor forming the second substrate 451 may be other than GaAs.

The active layer 453 is made of, for example, a compound semiconductor that emits light in a 980 nm band (hereinafter, referred to as “λa”) by spontaneous emission and stimulated emission. The active layer 453 is located between the fourth semiconductor layer 452 and the fifth semiconductor layer 454. In the present embodiment, the multi-quantum well structure is formed by alternately stacking undoped GaAs well layers and undoped AlGaAs barrier layers (barrier layers). For example, undoped Al _0.35 Ga _0.65 As barrier layers and undoped GaAs well layers are alternately and repeatedly formed for two to six periods.

The fourth semiconductor layer 452 is typically a DBR (Distributed Bragg Reflector) layer, and is formed on the second substrate 451. The fourth semiconductor layer 452 is made of a semiconductor having the first conductivity type. In this example, the first conductivity type is an n-type. The fourth semiconductor layer 452 is configured as a DBR for efficiently reflecting light emitted from the active layer 453. The fourth semiconductor layer 452 is formed by stacking a plurality of pairs of two layers each of which is an AlGaAs layer having a thickness of λa / 4 and has a different reflectance. More specifically, the fourth semiconductor layer 452 has, for example, an n-type Al _0.16 Ga _0.84 As layer (low Al composition layer) having a thickness of, for example, 600 ° and a relatively low Al composition, and a thickness of, for example, 700 °. An n-type Al _0.92 Ga _0.16 As layer having a relatively high Al composition (high Al composition layer) is alternately and repeatedly laminated for a plurality of cycles (for example, 20 cycles). The n-type Al _0.16 Ga _0.84 As layer and the n-type Al _0.92 Ga _0.16 As layer have, for example, 2 × 10 ¹⁷ cm ⁻³ to 3 × 10 ¹⁸ cm ⁻³ and 2 × 10 ¹⁷ cm ⁻³ to 3 × 10, respectively. ^An n-type impurity (for example, Si) is doped at a concentration of ¹⁸ cm ^-3 .

The fifth semiconductor layer 454 is typically a DBR layer and is made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. The fourth semiconductor layer 452 is located between the fifth semiconductor layer 454 and the second substrate 451. The fifth semiconductor layer 454 is configured as a DBR for efficiently reflecting light emitted from the active layer 453. More specifically, the fifth semiconductor layer 454 is formed by stacking a plurality of pairs of two layers each of which is an AlGaAs layer having a thickness of λa / 4 and has a different reflectance. The fifth semiconductor layer 454 includes, for example, a p-type Al _0.16 Ga _0.84 As layer (low Al composition layer) having a relatively low Al composition and a p-type Al _0.92 Ga _0.16 As layer (high Al composition) having a relatively high Al composition. (A composition layer) are alternately and repeatedly laminated for a plurality of cycles (for example, 20 cycles).

The current confinement layer 455 is located in the fifth semiconductor layer 454. The current constriction layer 455 contains a large amount of Al, for example, and is made of a layer that is easily oxidized. The current confinement layer 455 is formed by oxidizing this easily oxidizable layer. The current confinement layer 455 is not necessarily formed by oxidation, but may be formed by another method (for example, ion implantation). An opening 4551 is formed in the current confinement layer 455. A current flows through the opening 4551.

The insulating layer 456 is formed on the fifth semiconductor layer 454. Insulating layer 456 is made of, for example, SiO ₂ . An opening 4561 is formed in the insulating layer 456.

The conductive layer 457 is formed on the insulating layer 456. The conductive layer 457 is made of a conductive material (for example, metal). The conductive layer 457 is electrically connected to the fifth conductive layer 354 through the opening 4561 of the insulating layer 456. The conductive layer 457 has an opening 4571.

(4) The light emitting region 460 is a region from which light from the active layer 453 is emitted directly or after reflection. In the present example, the light emitting region 460 has an annular shape in plan view, but the shape is not particularly limited. The light emitting region 460 is formed by stacking the above-described fifth semiconductor layer 454, the current confinement layer 455, the insulating layer 456, and the conductive layer 457. And the like are provided. In the light-emitting region 460, light from the active layer 453 is emitted through the opening 4571 of the conductive layer 457.

The first electrode 41 is made of, for example, a metal, and is electrically connected to the fifth semiconductor layer 454. The second electrode 42 is formed on the back surface of the second substrate 451, and is made of, for example, metal. The second electrode 42 is die-bonded to the first surface 311 by a conductive bonding material 48 such as a paste or a solder containing a metal such as Ag. Thereby, the second electrode 42 is electrically connected to the first lead 31 of the conductive portion 3.

The wire 49 is connected to the first electrode 41 of the semiconductor light emitting device 4 and the first surface 321 of the second lead 32, as shown in FIGS. The material of the wire 49 is not particularly limited, and is made of, for example, Au. In the present embodiment, four wires 49 are provided in parallel with each other. However, the number and arrangement of the wires 49 are not particularly limited.

The cover 5 covers the semiconductor light emitting element 4 when viewed in the z direction and transmits light from the semiconductor light emitting element 4. In the present embodiment, the cover 5 includes a base layer 51, a diffusion layer 52, and a conductive layer 53. The cover 5 is joined to the third surface 13 (third surface 23) of the support 1 by, for example, a joining material 57. The bonding material 57 is, for example, an insulating adhesive made of a resin material.

The base layer 51 is made of a material such as glass that transmits light from the semiconductor light emitting element 4. In the present embodiment, the base layer 51 is made of transparent glass. The shape and the like of the base layer 51 are not particularly limited, and are rectangular in the present embodiment.

The diffusion layer 52 is disposed on the base material layer 51 and is a layer that diffuses and transmits light from the semiconductor light emitting element 4. An example of the diffusion layer 52 is an epoxy resin layer that has been subjected to an optical process for realizing a diffusion function. In the present embodiment, the diffusion layer 52 is provided on the surface of the base layer 51 facing the semiconductor light emitting element 4. In the illustrated example, the diffusion layer 52 is provided on one entire surface of the base layer 51.

The conductive layer 53 is disposed on the base layer 51 and is a layer made of a conductor. In the illustrated example, the conductive layer 53 is provided on the opposite side of the base layer 51 from the diffusion layer 52. In FIG. 2, the conductive layer 53 is hatched for convenience of understanding. The conductive layer 53 of the present embodiment has pad portions 531 and 532 and a wiring portion 533.

(4) The pad portions 531 and 532 are connection portions with the conductive portion 3. The pad portions 531 and 532 are formed in the base layer 51 at a portion closer to the other side in the x direction. The pad portion 531 and the pad portion 532 are arranged apart from each other in the y direction.

The wiring portion 533 is connected to the pad portion 531 and the pad portion 532, and is a portion for electrically connecting the pad portion 531 and the pad portion 532. The shape of the wiring portion 533 is not particularly limited, and in the illustrated example, the wiring portion 533 includes the first portion 5331, the second portion 5332, the third portion 5333, the fourth portion 5334, the fifth portion 5335, and the sixth portion. It has a portion 5336, a seventh portion 5337, an eighth portion 5338, and a ninth portion 5339.

パ ッ ド As shown in FIG. 2, the pad portion 5311 is connected to the pad portion 531 and extends from the pad portion 531 to one side in the y direction. The second portion 5332 is connected to the first portion 5331 and extends in the x direction. The third portion 5333 is connected to the second portion 5332 and extends in the y direction. The fourth portion 5334 is connected to the third portion 5333 and extends in the x direction. The fifth portion 5335 is connected to the fourth portion 5334 and extends in the y direction. The sixth portion 5336 is connected to the fifth portion 5335 and extends in the x direction. The seventh portion 5337 is connected to the sixth portion 5336, and extends in the y direction. The eighth portion 5338 is connected to the seventh portion 5337 and extends in the x direction. The ninth portion 5339 is connected to the eighth portion 5338 and the pad portion 532, and extends in the y direction.

導電 As shown in FIG. 2, the conductive layer 53 is provided at a position retracted from the semiconductor light emitting element 4 when viewed in the z direction. The conductive layer 53 includes a portion (second portion 5332) located on one side in the y direction and a portion located on one side in the x direction (third portion 5333) with respect to the semiconductor light emitting element 4 when viewed in the z direction. Have. Further, the conductive layer 53 has portions (second portion 5332 and fourth portion 5334) located on both sides in the y direction with respect to the semiconductor light emitting device 4. The conductive layer 53 has portions (third portion 5333 and fifth portion 5335) located on both sides in the x direction with respect to the semiconductor light emitting device 4. The illustrated wiring portion 533 of the conductive layer 53 has a shape surrounding the semiconductor light emitting element 4 when viewed in the z direction.

In the present example, the pad portions 531 and 532 overlap the third surface 13 when viewed in the z direction. The first portion 5331, the second portion 5332, the third portion 5333, the fourth portion 5334, the eighth portion 5338, and the ninth portion 5339 overlap the third surface 13 when viewed in the z direction. On the other hand, the fifth portion 5335, the sixth portion 5336, and the seventh portion 5337 overlap the first surface 11 when viewed in the z direction.

よ う As shown in FIG. 10, the conductive layer 53 of the present embodiment includes a first layer 53a and a second layer 53b. The first layer 53a is formed directly on the base material layer 51. The second layer 53b is formed on the first layer 53a. The material of the first layer 53a and the second layer 53b is not particularly limited. The material of the first layer 53a is, for example, Ti, and the material of the second layer 53b is, for example, Au. The first layer 53a and the second layer 53b are formed, for example, by plating or the like. In the illustrated example, the first layer 53a is formed of one plating layer, and the second layer 53b is formed of a plurality of plating layers. The pad portion 531 includes a first layer 53a and a second layer 53b including a plurality of plating layers. The same applies to the second part 5332. The wiring portion 533 includes a first layer 53a and a second layer 53b including, for example, only one plating layer. Thus, the thickness of the pad portions 531 and 532 is larger than the thickness of the wiring portion 533.

The wire 61 is connected to the first surface 331 (the ninth surface 19) of the third lead 33 and the pad portion 531 as shown in FIGS. The material of the wire 61 is not particularly limited, and is made of, for example, Au.

The wire 62 is connected to the first surface 341 (the eleventh surface 1b) of the fourth lead 34 and the pad 532, as shown in FIGS. The material of the wire 62 is not particularly limited, and is made of, for example, Au.

The sealing resin 71 is made of an insulating resin such as a silicone resin or an epoxy resin. The sealing resin 71 covers the wires 61 and 62. In the illustrated example, the sealing resin 71 is filled in the concave portion defined by the ninth surface 19 and the tenth surface 1a and the concave portion defined by the eleventh surface 1b and the twelfth surface 1c. . The sealing resin 71 covers the pad portion 531 and the pad portion 532, and exposes most of the wiring portion 533.

FIG. 13 is a system configuration diagram showing an example of an electronic apparatus using the semiconductor light emitting device A1. The electronic device C1 shown in the figure has a semiconductor light emitting device A1 and a controller Ct. The semiconductor light emitting device A1 and the controller Ct are mounted on, for example, a circuit board (not shown). In the semiconductor light emitting device A1, the second lead 32 is electrically connected to the anode electrode of the semiconductor light emitting element 4, and the first lead 31 is electrically connected to the cathode electrode of the semiconductor light emitting element 4. Further, the third lead 33 and the fourth lead 34 are electrically connected to the conductive layer 53 of the cover 5.

(4) The first lead 31, the second lead 32, the third lead 33, and the fourth lead 34 are connected to the controller Ct via wiring. The controller Ct performs light emission control of the semiconductor light emitting element 4 and detection control of the conduction state of the conductive layer 53.

Next, the operation of the semiconductor light emitting device A1 will be described.

According to the present embodiment, according to the present embodiment, if the base layer 51 of the cover 5 is damaged such as a crack, the conductive layer 53 may be cracked. Accordingly, the conduction state changes such that the conductive layer 53 is disconnected. By detecting this change by, for example, the controller Ct shown in FIG. 14, it is possible to determine that some trouble has occurred in the cover 5. Thereby, the controller Ct can stop the light emission of the semiconductor light emitting element 4, for example. Therefore, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed.

The conductive layer 53 is made of metal. Therefore, the cost can be reduced as compared with the case where the conductive layer 53 is formed using ITO or the like.

The conductive layer 53 is provided at a position retracted from the semiconductor light emitting element 4 when viewed in the z direction. Therefore, it is possible to prevent the metal 53 from blocking the light emitted from the semiconductor light emitting element 4. The conductive layer 53 includes a portion (second portion 5332) located on one side in the y direction with respect to the semiconductor light emitting element 4 and a portion located on one side in the x direction (third portion 5333) when viewed in the z direction. And Accordingly, it is possible to detect both the case where the base layer 51 has a crack along the x direction and the case where the base layer 51 has a crack along the y direction. Further, the conductive layer 53 has portions (second portion 5332 and fourth portion 5334) located on both sides in the y direction with respect to the semiconductor light emitting device 4. The conductive layer 53 has portions (third portion 5333 and fifth portion 5335) located on both sides in the x direction with respect to the semiconductor light emitting device 4. Thereby, crack detection can be performed more reliably.

(4) The pad portion 531 and the pad portion 532 are thicker than the wiring portion 533. Thereby, the wire 61 and the wire 62 can be more reliably bonded. Further, since the wiring portion 533 is relatively thin, the wiring portion 533 can be more quickly disconnected when a crack or the like occurs in the base material layer 51.

The wire 61 is connected to the third lead 33, and the wire 62 is connected to the fourth lead 34. The second surface 332 of the third lead 33 and the second surface 342 of the fourth lead 34 constitute the second surface 12 of the support 1 and are exposed. This allows the conductive layer 53 to be appropriately connected to a controller or the like (not shown) when the semiconductor light emitting device A1 is mounted.

(4) Since the semiconductor light emitting element 4 is mounted on the first lead 31, heat at the time of light emission of the semiconductor light emitting element 4 can be released from the second surface 312 of the first lead 31 to the outside.

FIGS. 14 to 24 show modifications and other embodiments of the present disclosure. In these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

FIG. 14 shows a modification of the cover 5. The cover 5 of the present example is different from the cover 5 of the above-described example in the configuration of the conductive layer 53. In this example, the second layer 53b is provided on a part of the conductive layer 53. Specifically, the pad section 531 and the pad section 532 have a first layer 53a and a second layer 53b. On the other hand, the wiring section 533 is composed of only the second layer 53b and does not include the first layer 53a.

According to the present example, the wiring section 533 is composed of only the first layer 53a. When the first layer 53a is made of, for example, Ti, for example, Ti is a material that is more brittle than Au, which is the material of the second layer 53b. Accordingly, when a crack or the like occurs in the base material layer 51, it is preferable to disconnect the wiring portion 533 more quickly.

<First Embodiment First Modification>
FIG. 15 shows a first modification of the semiconductor light emitting device A1. The semiconductor light emitting device A11 of this example has a wiring portion 533 different from the wiring portion 533 of the semiconductor light emitting device A1.

The wiring portion 533 of this example includes a first portion 5331, a second portion 5332, a third portion 5333, a fourth portion 5334, and a ninth portion 5339, and the above-described fifth portion 5335, sixth portion 5336, It does not have the seventh part 5337 and the eighth part 5338. The fourth part 5334 is connected to the third part 5333 and the ninth part 5339. The conductive layer 53 of this example has portions (second portion 5332 and fourth portion 5334) located on both sides in the y direction with respect to the semiconductor light emitting device 4. The conductive layer 53 has a portion (third portion 5333) located on one side in the x direction with respect to the semiconductor light emitting device 4. The illustrated wiring portion 533 of the conductive portion 3 has a shape surrounding the semiconductor light emitting element 4 on three sides when viewed in the z direction.

も The semiconductor light emitting device A11 according to the present embodiment can also suppress direct viewing of light from the semiconductor light emitting element 4 due to damage to the cover 5. As understood from the present modification, the shape of the conductive layer 53 (the wiring portion 533) is not particularly limited.

<Second embodiment>
16 and 17 show a semiconductor light emitting device according to the second embodiment of the present disclosure. FIG. 16 is a plan view showing a semiconductor light emitting device A2 of the present embodiment. FIG. 17 is a sectional view taken along the line XVI-XVI in FIG.

In the present embodiment, the support 1 does not have the ninth surface 19, the tenth surface 1a, the eleventh surface 1b, and the twelfth surface 1c in the semiconductor light emitting device A1 described above. Further, the conductive portion 3 has a columnar portion 371 and a columnar portion 372.

The columnar portion 371 overlaps with the third lead 33 when viewed in the z direction, and penetrates the base material 2 from the third surface 23 (the third surface 13) to the first surface 331 of the third lead 33. The columnar portion 371 is made of, for example, the same material (Cu or the like) as the third lead 33. The columnar portion 371 is joined to the third lead 33 by, for example, eutectic joining.

The columnar portion 372 overlaps the fourth lead 34 as viewed in the z direction, and penetrates the substrate 2 from the third surface 23 (the third surface 13) to the first surface 341 of the base 34. The columnar portion 372 is made of, for example, the same material (Cu or the like) as the fourth lead 34. The columnar portion 372 is joined to the fourth lead 34 by, for example, eutectic joining.

カ バ ー In the cover 5 of the present embodiment, the diffusion layer 52 and the conductive layer 53 are provided on the surface of the base layer 51 facing the semiconductor light emitting element 4. The diffusion layer 52 is provided so as to overlap the semiconductor light emitting element 4 when viewed in the z direction, and is separated from the conductive layer 53. The wiring portion 533 of the conductive layer 53 has a shape surrounding the semiconductor light emitting element 4 when viewed in the z direction, similarly to the wiring portion 533 of the above-described embodiment. The wiring portion 533 has a shape surrounding the diffusion layer 52 when viewed in the z direction. In the present embodiment, the second part 5332, the third part 5333, and the fourth part 5334 overlap the first surface 11 when viewed in the z direction. The fifth portion 5335, the sixth portion 5336, and the seventh portion 5337 overlap with the third surface 13 when viewed in the z direction.

The pad portion 531 and the columnar portion 371 are joined by the conductive joining material 59 and are electrically connected to each other. The conductive bonding material 59 is, for example, an Ag paste or a solder. The pad portion 532 and the columnar portion 372 are similarly joined by the conductive joining material 59 and are electrically connected to each other.

According to such an embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. In addition, by conducting the conductive layer 53 to the third lead 33 and the fourth lead 34 by the columnar portions 371 and 372, the resistance of the conduction path to the conductive layer 53 can be reduced. This is preferable for detecting the occurrence of disconnection of the wiring portion 533, that is, the occurrence of cracks in the base material layer 51 with higher accuracy.

<Second Embodiment First Modification>
FIG. 18 is a sectional view showing a first modification of the semiconductor light emitting device A2. In this example, the diffusion layer 52 is interposed between the base layer 51 and the conductive layer 53. The diffusion layer 52 is formed on one entire surface of the base layer 51.

に よ っ て According to such a modification as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by damage to the cover 5 from being directly viewed. Further, for example, the diffusion layer 52 made of an epoxy resin layer has a larger coefficient of thermal expansion than the base layer 51 made of glass or the like, and is easily deformed by heat. When the conductive layer 53 is a layer containing Au, for example, it has excellent ductility. Therefore, the conductive layer 53 can easily follow the thermal deformation of the diffusion layer 52, and it is possible to suppress disconnection of the conductive layer 53 due to a temperature change, and it is erroneously detected that a crack has occurred in the cover 5 (base layer 51). Can be avoided.

<Third embodiment>
19 and 20 show a semiconductor light emitting device according to the third embodiment of the present disclosure. FIG. 19 is a plan view showing the semiconductor light emitting device A3 of the present embodiment. FIG. 20 is a sectional view taken along line XX-XX in FIG.

The support 1 of the present embodiment includes the first surface 11, the second surface 12, the third surface 13, the fourth surface 14, the fifth surface 15, the sixth surface 16, and the first surface 11, the second surface 12, and the third surface 13 of the support 1 of the semiconductor light emitting device A2. It has a thirteenth surface 1d and a fourteenth surface 1e in addition to the seventh surface 17 and the eighth surface 18.

１３The thirteenth surface 1d is a surface facing one side in the z direction similarly to the first surface 11, and is located between the first surface 11 and the third surface 13 in the z direction. The thirteenth surface 1d is an annular shape surrounding the first surface 11 and the fourth surface 14 when viewed in the z direction. The fourteenth surface 1e is located between the thirteenth surface 1d and the third surface 13 in the z direction, and is connected to the thirteenth surface 1d and the third surface 13 in the illustrated example. The fourteenth surface 1e is inclined such that the distance between the opposing portions increases in the z direction from the thirteenth surface 1d toward the third surface 13.

The base material 2 of the present embodiment has a thirteenth surface 2d and a fourteenth surface 2e. The thirteenth surface 2d is a surface constituting the thirteenth surface 1d. The fourteenth surface 2e is a surface that constitutes the fourteenth surface 1e.

カ バ ー The cover 5 of the present embodiment includes a base layer 51, a diffusion layer 52, a conductive layer 53, and a base layer 54. A conductive layer 53 is formed on a surface of the base layer 51 facing the semiconductor light emitting element 4. The base material layer 51 is joined to the third surface 13 of the support 1 by a joining material 57. The pad 531 of the conductive layer 53 is conductively connected to the column 371, and the pad 532 is conductively connected to the column 372.

The base layer 54 is made of a material such as glass that transmits light from the semiconductor light emitting element 4. In the present embodiment, the base layer 54 is made of transparent glass. The shape and the like of the base layer 54 are not particularly limited, and are rectangular in the present embodiment. In the present embodiment, the diffusion layer 52 is formed on the surface of the base layer 54 facing the semiconductor light emitting element 4, and is formed on one entire surface of the base layer 54. The base material layer 54 is joined to the thirteenth surface 1 d of the support 1 by a joining material 58. The base layer 51 and the base layer 54 both overlap the semiconductor light emitting element 4 when viewed in the z direction.

According to such an embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, as understood from the present embodiment, the cover 5 is not limited to the configuration in which the diffusion layer 52 and the conductive layer 53 are formed on the same member.

<Fourth embodiment>
FIG. 21 is a cross-sectional view illustrating a semiconductor light emitting device A4 according to the fourth embodiment of the present disclosure. The support 1 of the present embodiment has a similar structure to the support 1 of the semiconductor light emitting device A1, but has a specific structure different from that of the semiconductor light emitting device A1, and is formed of a so-called multilayer wiring board.

基材 The base material 2 of the present embodiment includes a first layer 201 and a second layer 202. The first layer 201 and the second layer 202 are each made of an insulating material, for example, glass epoxy resin.

The conductive part 3 includes a first part 381, a second part 382, a third part 383, a fifth part 385, a sixth part 386, a seventh part 387, a ninth part 389, a tenth part 38a, and an eleventh part 38b. Have. The first part 381, the second part 382, the third part 383, the fifth part 385, the sixth part 386, the seventh part 387, the ninth part 389, the tenth part 38a and the eleventh part 38b are made of metal, For example, it is made of a plating layer of Cu, Ni, Au or the like.

The first portion 381 is formed on the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the first surface 311 of the semiconductor light emitting device A1. The second portion 382 is formed on the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the first surface 321 of the semiconductor light emitting device A1. The third portion 383 is formed on the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the first surface 331 of the semiconductor light emitting device A1. The semiconductor light emitting device A1 may further include a portion having the same shape, size, and arrangement as the first surface 341 in the semiconductor light emitting device A1 when viewed in the z direction.

The fifth portion 385 is formed on the second surface 22 of the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the second surface 312 of the semiconductor light emitting device A1. The sixth portion 386 is formed on the second surface 22 of the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the second surface 322 of the semiconductor light emitting device A1. The seventh portion 387 is formed on the second surface 22 of the first layer 201, and has the same shape, size, and arrangement as viewed in the z direction, for example, as the second surface 332 of the semiconductor light emitting device A1. The semiconductor light emitting device A1 may further include a portion having the same shape, size, and arrangement as the second surface 342 in the semiconductor light emitting device A1 as viewed in the z direction.

９The ninth part 389 penetrates the first layer 201 in the z direction, and is connected to the first part 381 and the fifth part 385. The tenth portion 38a penetrates the first layer 201 in the z direction, and is connected to the second portion 382 and the sixth portion 386. The eleventh part 38b penetrates the first layer 201 in the z direction, and is connected to the third part 383 and the seventh part 387. It should be noted that the shape, size and arrangement in the z direction are the same as those of the first surface 341 in the semiconductor light emitting device A1, and the shape, size and arrangement in the z direction are the same as the second surface 342 in the semiconductor light emitting device A1. It may further have a part connected to a certain part.

According to such an embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, as understood from the present embodiment, the specific structure of the support 1 is not limited at all.

<Fifth embodiment>
FIG. 22 is a cross-sectional view illustrating a semiconductor light emitting device A5 according to the fifth embodiment of the present disclosure. The support 1 of this embodiment has a similar structure to the support 1 of the semiconductor light emitting device A1, but has a specific structure different from that of the semiconductor light emitting device A1, and is made of a so-called ceramic wiring board.

基材 The base material 2 of the present embodiment includes a first layer 201, a second layer 202, and a third layer 203. The first layer 201, the second layer 202, and the third layer 203 are each made of a ceramic such as alumina. The fourth surface 10, the tenth surface 1a, and the twelfth surface 1c of the present embodiment have a shape along the z direction. The configuration of the conductive section 3 is similar to, for example, the conductive section 3 in the semiconductor light emitting device A4.

According to such an embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, as understood from the present embodiment, the specific structure of the support 1 is not limited at all.

<Sixth embodiment>
FIG. 23 is a plan view showing a semiconductor light emitting device A6 according to the sixth embodiment of the present disclosure, and FIG. 24 is a cross-sectional view taken along the line XXIV-XXIV of FIG. The semiconductor light emitting device A6 of the present embodiment includes a light receiving element 8.

導電 The conductive portion 3 of the present embodiment includes a fifth lead 35 and a sixth lead 36.

(5) The fifth lead 35 is spaced apart from the first lead 31 on one side in the x direction. The fifth lead 35 has a first surface 351, a second surface 352, a main portion 355, an edge 356, and a plurality of extending portions 357. The first surface 351 is a surface facing one side in the z direction, and forms the first surface 11. When viewed in the z direction, a part of the first surface 351 is exposed to a region surrounded by the fourth surface 14 (the fourth surface 24). The second surface 352 is a surface facing the other side in the z direction opposite to the first surface 351 and forms a part of the second surface 12. In the illustrated example, the second surface 352 is smaller than the first surface 351 when viewed in the z direction, and is included in the first surface 351.

The main portion 355 is a portion having the first surface 351 and the second surface 352, and is a portion where both the first surface 351 and the second surface 352 overlap in the z direction. The edge portion 356 is a portion surrounding the main portion 355 when viewed in the z direction, and has a part of the first surface 351. The other side in the z direction of the edge 356 is covered with the base material 2. The plurality of extending portions 357 extend outward from the edge 356 when viewed in the z direction. The extension 357 has a part of the first surface 351. The other side in the z direction of the extension 357 is covered with the base material 2. In the illustrated example, the fifth lead 35 has two extensions 357. One extension 357 has reached the fifth surface 25 of the base material 2, has an end surface flush with the fifth surface 25, and is exposed from the fifth surface 25. The other extension 357 reaches the seventh surface 27 of the base material 2, has an end surface flush with the seventh surface 27, and is exposed from the seventh surface 27.

(6) The sixth lead 36 is spaced apart from the first lead 31 on one side in the x direction, and is spaced apart from the fifth lead 35 on the other side in the y direction. The sixth lead 36 has a first surface 361, a second surface 362, a main portion 365, an edge 366, and a plurality of extending portions 367. The first surface 361 is a surface facing one side in the z direction, and forms the first surface 11. When viewed in the z direction, a part of the first surface 361 is exposed in a region surrounded by the fourth surface 14 (the fourth surface 24). The second surface 362 is a surface facing the other side in the z direction opposite to the first surface 361 and forms a part of the second surface 12. In the illustrated example, the second surface 362 is smaller than the first surface 361 when viewed in the z direction, and is included in the first surface 361.

The main portion 365 is a portion having the first surface 361 and the second surface 362, and is a portion where both the first surface 361 and the second surface 362 overlap in the z direction. The edge 366 is a portion surrounding the main portion 365 when viewed in the z direction, and has a part of the first surface 361. The other side of the edge 366 in the z direction is covered with the base material 2. The plurality of extending portions 367 extend outward from the edge 366 when viewed in the z direction. The extension 367 has a part of the first surface 361. The other side of the extension 367 in the z direction is covered with the base material 2. In the example shown, the sixth lead 36 has two extensions 367. One extension 367 reaches the sixth surface 26 of the base material 2, has an end surface flush with the sixth surface 26, and is exposed from the sixth surface 26. The other extension 367 reaches the seventh surface 27 of the substrate 2, has an end surface flush with the seventh surface 27, and is exposed from the seventh surface 27.

The light receiving element 8 is an element having a photoelectric conversion function of generating electromotive force by receiving light emitted from the semiconductor light emitting element 4. The light receiving element 8 is die-bonded to the first surface 351 of the fifth lead 35 by a conductive bonding material 88 such as a paste or a solder containing a metal such as Ag. The light receiving element 8 is connected to the first surface 361 of the sixth lead 36 by a wire 89. The wire 89 is made of a metal such as Au, for example, and is bonded to the light receiving element 8 and the first surface 361, respectively.

In the present embodiment, the wiring portion 533 (third portion 5333) of the conductive layer 53 overlaps the light receiving element 8 when viewed in the z direction.

According to such an embodiment as well, it is possible to prevent the light from the semiconductor light emitting element 4 caused by the damage of the cover 5 from being directly viewed. Further, the provision of the light receiving element 8 enables the light emitting state of the semiconductor light emitting element 4 to be monitored from the output signal of the light receiving element 8. Further, the third portion 5333 (the wiring portion 533) overlaps with the light receiving element 8 when viewed in the z direction. Thus, part of the light from the semiconductor light emitting element 4 can be reflected by the third portion 5333 (wiring portion 533) made of metal and directed to the light receiving element 8. Therefore, the light emission state of the light receiving element 8 can be monitored with higher accuracy.

半導体 The semiconductor light emitting device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor light emitting device according to the present disclosure can be variously changed in design.

[Appendix 1]
A semiconductor light emitting device;
Having a substrate and a conductive portion, a support for supporting the semiconductor light emitting element,
A cover that overlaps with the semiconductor light emitting element when viewed in a first direction and transmits light from the semiconductor light emitting element;
The semiconductor light emitting device, wherein the cover includes a base layer that transmits light from the semiconductor light emitting element and a conductive layer disposed on the base layer.
[Appendix 2]
The semiconductor light emitting device according to claim 1, wherein the conductive layer is provided at a position retracted from the semiconductor light emitting element when viewed in the first direction.
[Appendix 3]
The conductive layer has a portion positioned on one side in a second direction perpendicular to the first direction with respect to the semiconductor light emitting element when viewed in the first direction, and in any of the first direction and the second direction. 3. The semiconductor light emitting device according to claim 2, further comprising: a portion located on one side in a third direction that is also at a right angle.
[Appendix 4]
The semiconductor light emitting device according to claim 3, wherein the conductive layer has portions located on both sides in the second direction with respect to the semiconductor light emitting element.
[Appendix 5]
5. The semiconductor light emitting device according to claim 4, wherein the conductive layer has portions located on both sides in the third direction with respect to the semiconductor light emitting element.
[Appendix 6]
6. The semiconductor light emitting device according to any one of supplementary notes 3 to 5, wherein the conductive layer is made of a metal.
[Appendix 7]
7. The semiconductor light emitting device according to claim 6, wherein the conductive layer includes a pad portion that is a connection portion with the conductive portion, and a wiring portion connected to the pad portion.
[Appendix 8]
8. The semiconductor light emitting device according to claim 7, wherein a thickness of the pad portion is larger than a thickness of the wiring portion.
[Appendix 9]
9. The semiconductor light emitting device according to claim 8, wherein the conductive layer includes a first layer and a second layer stacked on each other.
[Appendix 10]
The semiconductor light emitting device according to claim 9, wherein the first layer is exposed from the second layer in the wiring section.
[Appendix 11]
The semiconductor light emitting device according to any one of supplementary notes 3 to 10, wherein the cover includes a diffusion layer that diffuses light from the semiconductor light emitting element.
[Appendix 12]
The semiconductor light emitting device according to claim 11, wherein the conductive layer is disposed on a side opposite to the diffusion layer with the base layer interposed therebetween.
[Appendix 13]
The semiconductor light emitting device according to claim 11, wherein the conductive layer is arranged on the same side as the diffusion layer with respect to the base layer.
[Appendix 14]
The semiconductor light emitting device according to claim 13, wherein the diffusion layer is separated from the conductive layer when viewed in the first direction.
[Appendix 15]
The support has a first surface on which the semiconductor light emitting element is arranged and faces the first direction, a second surface facing the opposite side to the first surface, a first surface facing the same side as the first surface and the first surface. A third surface surrounding the first surface and a fourth surface interposed between the first surface and the third surface in the first direction as viewed from the first direction;
The semiconductor light emitting device according to any one of supplementary notes 3 to 14, wherein the cover is supported on the third surface.
[Appendix 16]
16. The semiconductor light emitting device according to claim 15, further comprising a wire connected to the conductive layer and the conductive portion.
[Appendix 17]
16. The semiconductor light emitting device according to claim 15, wherein the conductive portion includes a columnar portion that is electrically connected to the conductive layer and penetrates the base material in the first direction.
[Appendix 18]
The semiconductor light emitting device according to any one of supplementary notes 1 to 17, wherein the semiconductor light emitting element is a VCSEL element.

Claims (18)

1. A semiconductor light emitting device;
   Having a substrate and a conductive portion, a support for supporting the semiconductor light emitting element,
   A cover that overlaps with the semiconductor light emitting element when viewed in a first direction and transmits light from the semiconductor light emitting element;
   The semiconductor light emitting device, wherein the cover includes a base layer that transmits light from the semiconductor light emitting element and a conductive layer disposed on the base layer.
2. The semiconductor light emitting device according to claim 1, wherein the conductive layer is provided at a position retracted from the semiconductor light emitting element when viewed in the first direction.
3. The conductive layer has a portion positioned on one side in a second direction perpendicular to the first direction with respect to the semiconductor light emitting element when viewed in the first direction, and in any of the first direction and the second direction. 3. The semiconductor light emitting device according to claim 2, further comprising: a portion located on one side in a third direction that is also at a right angle.
4. The semiconductor light emitting device according to claim 3, wherein the conductive layer has portions located on both sides in the second direction with respect to the semiconductor light emitting element.
5. The semiconductor light emitting device according to claim 4, wherein the conductive layer has portions located on both sides in the third direction with respect to the semiconductor light emitting element.
6. 6. The semiconductor light emitting device according to claim 3, wherein the conductive layer is made of a metal.
7. 7. The semiconductor light emitting device according to claim 6, wherein the conductive layer includes a pad portion that is a connection portion with the conductive portion, and a wiring portion connected to the pad portion.
8. 8. The semiconductor light emitting device according to claim 7, wherein the thickness of the pad portion is larger than the thickness of the wiring portion.
9. The semiconductor light emitting device according to claim 8, wherein the conductive layer includes a first layer and a second layer stacked on each other.
10. The semiconductor light emitting device according to claim 9, wherein the first layer is exposed from the second layer in the wiring section.
11. 11. The semiconductor light emitting device according to claim 3, wherein the cover includes a diffusion layer that diffuses light from the semiconductor light emitting element.
12. The semiconductor light emitting device according to claim 11, wherein the conductive layer is disposed on the opposite side of the base layer from the diffusion layer.
13. The semiconductor light emitting device according to claim 11, wherein the conductive layer is arranged on the same side as the diffusion layer with respect to the base layer.
14. The semiconductor light emitting device according to claim 13, wherein the diffusion layer is separated from the conductive layer when viewed in the first direction.
15. The support has a first surface on which the semiconductor light emitting element is arranged and faces the first direction, a second surface facing the opposite side to the first surface, a first surface facing the same side as the first surface and the first surface. A third surface surrounding the first surface and a fourth surface interposed between the first surface and the third surface in the first direction as viewed from the first direction;
    15. The semiconductor light emitting device according to claim 3, wherein said cover is supported by said third surface.
16. 16. The semiconductor light emitting device according to claim 15, further comprising: a wire connected to the conductive layer and the conductive portion.
17. The semiconductor light emitting device according to claim 15, wherein the conductive portion includes a columnar portion that is electrically connected to the conductive layer and penetrates the base in the first direction.
18. 18. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is a VCSEL device.

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