TWI710147B - Light emitting diode assembly structure - Google Patents

Light emitting diode assembly structure Download PDF

Info

Publication number
TWI710147B
TWI710147B TW108137028A TW108137028A TWI710147B TW I710147 B TWI710147 B TW I710147B TW 108137028 A TW108137028 A TW 108137028A TW 108137028 A TW108137028 A TW 108137028A TW I710147 B TWI710147 B TW I710147B
Authority
TW
Taiwan
Prior art keywords
light
emitting chip
emitting diode
reflector
groove
Prior art date
Application number
TW108137028A
Other languages
Chinese (zh)
Other versions
TW201947788A (en
Inventor
葉志庭
潘錫明
張志偉
Original Assignee
宏齊科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 宏齊科技股份有限公司 filed Critical 宏齊科技股份有限公司
Priority to TW108137028A priority Critical patent/TWI710147B/en
Publication of TW201947788A publication Critical patent/TW201947788A/en
Application granted granted Critical
Publication of TWI710147B publication Critical patent/TWI710147B/en

Links

Images

Landscapes

  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip. The light guiding member is arranged over the light emitting chip. The reflecting member is arranged over the light guiding member. The light emitting chip is used to emit a light, and the light guiding member is used to adjust the irradiation angle of the light emitted from the light emitting chip. The reflecting member is a planar or non-planar structure. The reflecting member is faced towards the light emitting chip and is arranged over the light guiding member. And the light emitted from the light emitting chip changes the irradiation range of the light through the reflection surface structure of the reflection member. A package structure of another light emitting diode also is provided, wherein the light guiding ring and the reflection member are arranged around the light emitting chip so that the light emitted from the light emitting chip can be concentrated to irradiate toward the outside of the assembly structure.

Description

發光二極體的封裝結構Packaging structure of light emitting diode

本發明是涉及一種發光二極體的封裝結構。 The invention relates to a packaging structure of a light emitting diode.

科技日新月異,許許多多的科技產品推層出新。目前,生活上已經可以看到各式各樣的發光二極體商品的應用,例如交通號志、汽機車燈、路燈、指示燈或手電筒等。這些發光二極體商品除了必要的發光晶片制程,通常還需要經過封裝制程。 Technology is changing with each passing day, and many new technology products are being introduced one after another. At present, you can see the application of various light-emitting diode products in life, such as traffic signs, automobile lights, street lights, indicator lights, or flashlights. In addition to the necessary light-emitting chip manufacturing process, these light-emitting diode products usually also need to go through a packaging process.

發光二極體的封裝結構設置主要是為了改善發光晶片的電能提供,並改善發光方式的相關問題。當發光晶片組件長時間暴露在大氣中時,會受到水氣或其他環境中的化學物質影響而老化,進而造成發光二極體的特性衰退。目前,選用高透明度的環氧樹酯包覆發光晶片,從而能夠有效隔絕大氣。因此,選用適合的封裝基材可以為發光晶片元件提供較好的保護,並且使發光二極體元件的使用壽命能大幅提升。然而,使用高透明度的環氧樹脂包覆發光晶片,其發光晶片發出的光線的照射範圍受限制,且其出光效率低。 The packaging structure of the light emitting diode is mainly used to improve the power supply of the light emitting chip and to improve the related problems of the light emitting mode. When the light-emitting chip assembly is exposed to the atmosphere for a long time, it will be affected by moisture or other chemical substances in the environment and deteriorate, thereby causing the characteristics of the light-emitting diode to decline. Currently, high-transparency epoxy resin is used to coat the light-emitting chip, which can effectively isolate the atmosphere. Therefore, the selection of a suitable packaging substrate can provide better protection for the light-emitting chip element, and greatly increase the service life of the light-emitting diode element. However, the use of high-transparency epoxy resin to cover the light-emitting chip, the irradiation range of the light emitted by the light-emitting chip is limited, and the light extraction efficiency is low.

此外,光學設計也是封裝程式中重要的一環。當前,研究的熱點聚焦在如何有效地把發光晶片所發出的光線匯出,以使發光二極體晶片發出的光線在使用上能夠優化。目前,在傳統的發光二極體封裝完成後,再搭選二次光學透鏡,其可以調控合適的發光角度。然而,採用二次光學透 鏡,其不易組裝,對位,且成本較高。 In addition, optical design is also an important part of the packaging process. At present, the research focus is on how to effectively extract the light emitted by the light-emitting chip, so that the light emitted by the light-emitting diode chip can be optimized in use. At present, after the traditional light-emitting diode packaging is completed, a secondary optical lens is selected, which can adjust the appropriate light-emitting angle. However, the use of secondary optical transmission The mirror is not easy to assemble, is aligned, and the cost is relatively high.

為解決上述問題,本發明提供一種組裝簡易、發光效率較高的發光二極體的封裝結構。所述發光二極體的封裝結構通過應用光學結構設計,使其能夠調控發光二極體所發出的光線角度,進而用以取代成本較高的二次光學透鏡。 In order to solve the above-mentioned problems, the present invention provides a light-emitting diode package structure with simple assembly and high luminous efficiency. The packaging structure of the light-emitting diode is designed by applying an optical structure, so that it can control the angle of the light emitted by the light-emitting diode, so as to replace the high-cost secondary optical lens.

一種發光二極體的封裝結構,其包括一發光晶片、一色轉換層、一導光件及一反射件。所述色轉換層包覆所述發光晶片。所述導光件設置在所述發光晶片的上方。所述反射件設置在所述導光件的上方。所述反射件包括一面向所述發光晶片的第一反射表面,所述第一反射表面為平面、凹面、凸面、抛物面、多線段面或曲面。 A light-emitting diode packaging structure includes a light-emitting chip, a color conversion layer, a light guide member and a reflective member. The color conversion layer covers the light-emitting chip. The light guide member is arranged above the light-emitting chip. The reflecting member is arranged above the light guide member. The reflecting member includes a first reflecting surface facing the light-emitting chip, and the first reflecting surface is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface.

在一實施例中,所述色轉換層設置在所述發光晶片和所述導光件之間。 In an embodiment, the color conversion layer is disposed between the light-emitting chip and the light guide.

在一實施例中,所述導光件包覆所述色轉換層或設置在所述色轉換層的上方。 In an embodiment, the light guide member covers the color conversion layer or is disposed above the color conversion layer.

在一實施例中,所述色轉換層設置在所述導光件與所述反射件之間。 In an embodiment, the color conversion layer is disposed between the light guide member and the reflective member.

在一實施例中,所述色轉換層包覆所述導光件與所述發光晶片。 In an embodiment, the color conversion layer covers the light guide and the light-emitting chip.

在一實施例中,所述色轉換層包覆所述導光件,所述導光件包覆所述發光晶片。 In an embodiment, the color conversion layer covers the light guide, and the light guide covers the light-emitting chip.

在一實施例中,所述發光二極體的封裝結構還包括一基板,所述基板包括一面向所述反射件的第一反射表面的第二發射表面,所述發光晶片設置在所述基板的第二反射表面上。 In one embodiment, the light emitting diode package structure further includes a substrate, the substrate includes a second emitting surface facing the first reflective surface of the reflector, and the light emitting chip is disposed on the substrate On the second reflective surface.

在一實施例中,所述導光件包含矽氧樹脂和附加材料。所述附加材料為所述矽氧樹脂重量的5%~15%。所述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 In an embodiment, the light guide includes silicone resin and additional materials. The additional material is 5%-15% of the weight of the silicone resin. The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles.

在一實施例中,所述矽氧樹脂的折射率為1.4-1.6。所述附加材料的折射率為1.5-1.8。 In one embodiment, the refractive index of the silicone resin is 1.4-1.6. The refractive index of the additional material is 1.5-1.8.

在一實施例中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物。所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。 In one embodiment, the organic diffusion particles include organosilicon compounds and acrylic compounds. The inorganic diffusion particles include silicon dioxide or calcium carbonate compounds.

本發明還提供另一種發光二極體的封裝結構,其包括一發光晶片、一色轉換層、一導光件及一反射件。所述色轉換層包覆所述發光晶片。所述反射件環設於所述色轉換層的側邊。所述導光件包覆所述色轉換層與所述反射件的周圍。所述反射件與所述發光晶片相對的內側表面為一反射表面。所述反射表面為對稱或非對稱表面。 The present invention also provides another light-emitting diode package structure, which includes a light-emitting chip, a color conversion layer, a light guide, and a reflective member. The color conversion layer covers the light-emitting chip. The reflector is arranged around the side of the color conversion layer. The light guide member covers the color conversion layer and the surroundings of the reflective member. The inner surface of the reflector opposite to the light-emitting chip is a reflective surface. The reflective surface is a symmetrical or asymmetrical surface.

在一實施例中,所述反射表面為平面、抛物面、多線段面或曲面。 In an embodiment, the reflective surface is a flat surface, a parabolic surface, a polyline segment surface or a curved surface.

在一實施例中,所述導光件包括與所述發光晶片相對的一出光面。所述出光面為一連續結構面或一不連續結構面。所述連續結構面和所述不連續結構面為圓弧面、圓弧柱面與V形槽面。 In an embodiment, the light guide member includes a light emitting surface opposite to the light emitting chip. The light emitting surface is a continuous structure surface or a discontinuous structure surface. The continuous structure surface and the discontinuous structure surface are a circular arc surface, a circular arc cylinder surface and a V-shaped groove surface.

在一實施例中,所述導光件包含矽氧樹脂和附加材料。所述附加材料為所述矽氧樹脂重量的5%~15%。所述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 In an embodiment, the light guide includes silicone resin and additional materials. The additional material is 5%-15% of the weight of the silicone resin. The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles.

在一實施例中,所述矽氧樹脂的折射率為1.4-1.6。所述附加材料的折射率為1.5-1.8。 In one embodiment, the refractive index of the silicone resin is 1.4-1.6. The refractive index of the additional material is 1.5-1.8.

在一實施例中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物。所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。 In one embodiment, the organic diffusion particles include organosilicon compounds and acrylic compounds. The inorganic diffusion particles include silicon dioxide or calcium carbonate compounds.

本發明還提供一種發光二極體的封裝結構,其包括一發光晶片, 一色轉換層、一導光件、和一反射件。所述色轉換層包覆所述發光晶片。所述導光件設置在所述發光晶片的上方。所述反射件設置在所述導光件的上方。所述反射件包括一面向所述發光晶片的第一反射表面,所述第一反射表面為平面、凹面、凸面、抛物面、多線段面或曲面。所述反射件於所述發光晶片的正上方設有一溝槽,所述溝槽自所述反射件的上表面貫穿至所述反射件的下表面。 The present invention also provides a light-emitting diode packaging structure, which includes a light-emitting chip, A color conversion layer, a light guide part, and a reflection part. The color conversion layer covers the light-emitting chip. The light guide member is arranged above the light-emitting chip. The reflecting member is arranged above the light guide member. The reflecting member includes a first reflecting surface facing the light-emitting chip, and the first reflecting surface is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface. The reflector is provided with a groove directly above the light-emitting chip, and the groove penetrates from the upper surface of the reflector to the lower surface of the reflector.

在一實施例中,所述溝槽呈對稱分佈。 In one embodiment, the grooves are distributed symmetrically.

在一實施例中,所述溝槽為十字型溝槽或圓型溝槽。 In one embodiment, the groove is a cross-shaped groove or a round groove.

在一實施例中,所述溝槽的寬度範圍為0.05mm-0.3mm。 In an embodiment, the width of the groove ranges from 0.05 mm to 0.3 mm.

在一實施例中,所述溝槽包括遠離所述導光件的一上端部和靠近所述導光件的一下端部,所述上端部的寬度大於或等於所述下端部的寬度。 In one embodiment, the groove includes an upper end far from the light guide and a lower end close to the light guide, and the width of the upper end is greater than or equal to the width of the lower end.

在一實施例中,所述導光件包含矽氧樹脂和附加材料。所述附加材料為所述矽氧樹脂重量的5%~15%。所述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 In an embodiment, the light guide includes silicone resin and additional materials. The additional material is 5%-15% of the weight of the silicone resin. The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles.

在一實施例中,所述矽氧樹脂的折射率為1.4-1.6。所述附加材料的折射率為1.5-1.8。 In one embodiment, the refractive index of the silicone resin is 1.4-1.6. The refractive index of the additional material is 1.5-1.8.

在一實施例中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物。所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。 In one embodiment, the organic diffusion particles include organosilicon compounds and acrylic compounds. The inorganic diffusion particles include silicon dioxide or calcium carbonate compounds.

本發明還提供另一種發光二極體的封裝結構,其包括一發光晶片、一色轉換層、一導光件和一反射件。所述色轉換層包覆所述發光晶片。所述導光件設置在所述發光晶片的上方。所述反射件設置在所述導光件的上方。所述反射件包括一面向所述發光晶片的第一反射表面,所述第一反射表面為平面、凹面、凸面、抛物面、多線段面或曲面。所述發光二極體的 封裝結構於所述發光晶片的正上方設有一溝槽,所述溝槽自所述反射件的上表面貫穿至所述導光件的上表面與下表面之間的預設位置。 The present invention also provides another light-emitting diode packaging structure, which includes a light-emitting chip, a color conversion layer, a light guide, and a reflective member. The color conversion layer covers the light-emitting chip. The light guide member is arranged above the light-emitting chip. The reflecting member is arranged above the light guide member. The reflecting member includes a first reflecting surface facing the light-emitting chip, and the first reflecting surface is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface. Of the light-emitting diode The packaging structure is provided with a groove directly above the light-emitting chip, and the groove penetrates from the upper surface of the reflecting member to a predetermined position between the upper surface and the lower surface of the light guide member.

在一實施例中,所述溝槽呈對稱分佈。 In one embodiment, the grooves are distributed symmetrically.

在一實施例中,所述溝槽為十字型溝槽或圓型溝槽。 In one embodiment, the groove is a cross-shaped groove or a round groove.

在一實施例中,所述溝槽的寬度範圍為0.05mm-0.3mm。 In an embodiment, the width of the groove ranges from 0.05 mm to 0.3 mm.

在一實施例中,所述溝槽包括遠離所述色轉換層的一上端部和靠近所述色轉換層的一下端部,所述上端部的寬度大於或等於所述下端部的寬度。 In an embodiment, the groove includes an upper end portion away from the color conversion layer and a lower end portion close to the color conversion layer, and the width of the upper end portion is greater than or equal to the width of the lower end portion.

在一實施例中,所述導光件包含矽氧樹脂和附加材料。所述附加材料為所述矽氧樹脂重量的5%~15%。所述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 In an embodiment, the light guide includes silicone resin and additional materials. The additional material is 5%-15% of the weight of the silicone resin. The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles.

在一實施例中,所述矽氧樹脂的折射率為1.4-1.6。所述附加材料的折射率為1.5-1.8。 In one embodiment, the refractive index of the silicone resin is 1.4-1.6. The refractive index of the additional material is 1.5-1.8.

在一實施例中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物。所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。 In one embodiment, the organic diffusion particles include organosilicon compounds and acrylic compounds. The inorganic diffusion particles include silicon dioxide or calcium carbonate compounds.

與先前技術相比,本發明的發光二極體的封裝結構通過對導光件與反射件的結構設計,使其能夠調控發光二極體所發出的光線角度,並取代現有的成本較高的二次光學透鏡。因此,本發明的發光二極體的封裝結構不僅組裝簡易,發光效率較高,且生產成本較低,適合於工業化生產。 Compared with the prior art, the encapsulation structure of the light-emitting diode of the present invention is able to control the angle of light emitted by the light-emitting diode through the structural design of the light guide and the reflector, and replace the existing high-cost Secondary optical lens. Therefore, the packaging structure of the light-emitting diode of the present invention is not only easy to assemble, high luminous efficiency, but also low in production cost, which is suitable for industrial production.

1,2,3:發光二極體的封裝結構 1,2,3: Package structure of light-emitting diode

10,10A:封裝體 10, 10A: package body

20,20A:發光晶片 20, 20A: Light-emitting chip

21,31,41,51:上表面 21, 31, 41, 51: upper surface

30,30A:色轉換層 30, 30A: color conversion layer

40,40A:導光件 40, 40A: light guide

42,52:下表面 42, 52: lower surface

401A:出光面 401A: Glossy surface

50,50A:反射件 50, 50A: reflector

503:反射區 503: reflection area

51A:前板 51A: Front panel

52A:後板 52A: Rear panel

53A:第一側板 53A: The first side panel

54A:第二側板 54A: second side panel

55A:頂端部 55A: Top part

56A:底端部 56A: bottom end

α,γ:夾角 α, γ: included angle

β:底角 β: bottom angle

100,100A:光線 100, 100A: light

60:基板 60: substrate

70:溝槽 70: groove

701:側壁 701: side wall

702:上端部 702: upper end

703:下端部 703: lower end

本發明將可由以下之敘述配合附圖被更佳地理解,其中: The present invention will be better understood from the following description with accompanying drawings, in which:

圖1A是本發明第一實施例中的發光二極體的封裝結構的示意圖,其中,所述發光二極體的封裝結構包括一反射件及一導光件。 FIG. 1A is a schematic diagram of the packaging structure of a light-emitting diode in the first embodiment of the present invention, wherein the packaging structure of the light-emitting diode includes a reflective member and a light guide member.

圖1B是本發明第一實施例中的發光二極體的封裝結構的光線路徑示意圖。 FIG. 1B is a schematic diagram of the light path of the package structure of the light emitting diode in the first embodiment of the present invention.

圖2A是本發明第一實施例中的反射件的第一種實施方式的示意圖。 Fig. 2A is a schematic diagram of a first implementation of the reflector in the first embodiment of the present invention.

圖2B是本發明第一實施例中的反射件的第二種實施方式的示意圖。 Fig. 2B is a schematic diagram of a second embodiment of the reflector in the first embodiment of the present invention.

圖2C是本發明第一實施例中的反射件的第三種實施方式的示意圖。 Fig. 2C is a schematic diagram of a third embodiment of the reflector in the first embodiment of the present invention.

圖2D是本發明第一實施例中的反射件的第四種實施方式的示意圖。 Fig. 2D is a schematic diagram of a fourth embodiment of the reflector in the first embodiment of the present invention.

圖3是本發明第二實施例中的發光二極體的封裝結構的示意圖。 FIG. 3 is a schematic diagram of the packaging structure of the light emitting diode in the second embodiment of the present invention.

圖4是本發明第三實施例中的發光二極體的封裝結構的示意圖。 4 is a schematic diagram of the packaging structure of the light emitting diode in the third embodiment of the present invention.

圖5是本發明第四實施例中的發光二極體的封裝結構的示意圖。 FIG. 5 is a schematic diagram of the packaging structure of the light emitting diode in the fourth embodiment of the present invention.

圖6A是本發明第五實施例中的發光二極體的封裝結構的示意圖,其中,所述發光二極體的封裝結構包括一反射件及一導光件。 6A is a schematic diagram of the packaging structure of a light-emitting diode in a fifth embodiment of the present invention, wherein the packaging structure of the light-emitting diode includes a reflector and a light guide.

圖6B是本發明第五實施例中的發光二極體的封裝結構的光線路徑示意圖。 6B is a schematic diagram of light paths of the light emitting diode packaging structure in the fifth embodiment of the present invention.

圖6C是本發明第五實施例中的反射件角度的第一種實施方式的俯視圖。 Fig. 6C is a top view of the first embodiment of the angle of the reflector in the fifth embodiment of the present invention.

圖6D是本發明第五實施例中的反射件角度的第二種實施方式的俯視圖。 Fig. 6D is a top view of a second embodiment of the angle of the reflector in the fifth embodiment of the present invention.

圖7A是本發明第五實施例中的反射件的第一實施方式的示意圖。 Fig. 7A is a schematic diagram of the first embodiment of the reflector in the fifth embodiment of the present invention.

圖7B是本發明第五實施例中的反射件的第二實施方式的示意圖。 Fig. 7B is a schematic diagram of the second embodiment of the reflector in the fifth embodiment of the present invention.

圖7C是本發明第五實施例中的反射件的第三實施方式的示意圖。 Fig. 7C is a schematic diagram of a third embodiment of the reflector in the fifth embodiment of the present invention.

圖8A是本發明第五實施例中的導光件的第一實施方式的示意圖。 Fig. 8A is a schematic diagram of the first implementation of the light guide in the fifth embodiment of the present invention.

圖8B是本發明第五實施例中的導光件的第二實施方式的示意圖。 Fig. 8B is a schematic diagram of a second embodiment of the light guide in the fifth embodiment of the present invention.

圖8C是本發明第五實施例中的導光件的第三實施方式的示意圖。 Fig. 8C is a schematic diagram of a third embodiment of the light guide in the fifth embodiment of the present invention.

圖8D是本發明第五實施例中的導光件的第四實施方式的示意圖。 Fig. 8D is a schematic diagram of a fourth embodiment of the light guide in the fifth embodiment of the present invention.

圖8E是本發明第五實施例中的導光件的第五實施方式的示意圖。 Fig. 8E is a schematic diagram of a fifth embodiment of the light guide in the fifth embodiment of the present invention.

圖8F是本發明第五實施例中的導光件的第六實施方式的示意圖。 Fig. 8F is a schematic diagram of a sixth embodiment of the light guide in the fifth embodiment of the present invention.

圖9A是本發明第六實施例中的發光二極體的封裝結構的第一實施方式的示意圖,其中,所述發光二極體的封裝結構包括一反射件,所述發光二極體的封裝結構設有貫穿所述反射件的一溝槽。 9A is a schematic diagram of a first implementation of a light-emitting diode packaging structure in a sixth embodiment of the present invention, wherein the light-emitting diode packaging structure includes a reflector, and the light-emitting diode packaging structure The structure is provided with a groove penetrating the reflector.

圖9B是本發明第六實施例中的發光二極體的封裝結構的第二實施方式的示意圖。 FIG. 9B is a schematic diagram of a second embodiment of the packaging structure of a light emitting diode in the sixth embodiment of the present invention.

圖10A是本發明第六實施例中的發光二極體的封裝結構的一實施方式的俯視圖。 FIG. 10A is a top view of an embodiment of the packaging structure of a light emitting diode in the sixth embodiment of the present invention.

圖10B是本發明第六實施例中的發光二極體的封裝結構的另一實施方式的俯視圖。 10B is a top view of another embodiment of the packaging structure of the light emitting diode in the sixth embodiment of the present invention.

圖11A是本發明第七實施例中的發光二極體的封裝結構的第一實施方式的示意圖,其中,所述發光二極體的封裝結構包括一反射件及一導光件,所述發光二極體的封裝結構設有貫穿所述反射件與所述導光件的一溝槽。 11A is a schematic diagram of the first implementation of the light emitting diode package structure in the seventh embodiment of the present invention, wherein the light emitting diode package structure includes a reflective member and a light guide member, the light emitting diode The package structure of the diode is provided with a groove penetrating the reflecting part and the light guide part.

圖11B是本發明第七實施例中的發光二極體的封裝結構的第二實施方式的示意圖。 FIG. 11B is a schematic diagram of a second embodiment of the packaging structure of the light emitting diode in the seventh embodiment of the present invention.

圖12是本發明第八實施例中的發光二極體的封裝結構的示意圖。 FIG. 12 is a schematic diagram of the packaging structure of the light emitting diode in the eighth embodiment of the present invention.

圖13是本發明第九實施例中的發光二極體的封裝結構的示意圖。 FIG. 13 is a schematic diagram of the packaging structure of the light emitting diode in the ninth embodiment of the present invention.

圖14是本發明第十實施例中的發光二極體的封裝結構的示意圖。 Fig. 14 is a schematic diagram of a package structure of a light emitting diode in a tenth embodiment of the present invention.

圖15是本發明第十一實施例中的發光二極體的封裝結構的示意圖。 15 is a schematic diagram of the packaging structure of a light emitting diode in the eleventh embodiment of the present invention.

圖16是本發明第十二實施例中的發光二極體的封裝結構的示意圖。 FIG. 16 is a schematic diagram of the packaging structure of the light emitting diode in the twelfth embodiment of the present invention.

圖17是本發明第十三實施例中的發光二極體的封裝結構的示意圖。 FIG. 17 is a schematic diagram of the packaging structure of a light emitting diode in the thirteenth embodiment of the present invention.

為了對本發明的技術特徵、目的和效果有更加清楚的理解,現結合附圖詳細說明本發明的具體實施方式。顯然,所描述的實施例是本發明的一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域普通技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施例,都屬於本發明的保護範圍。 In order to have a clearer understanding of the technical features, objectives and effects of the present invention, the specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

請一併參閱圖1A和圖1B,展示了本發明的第一較佳實施例中的發光二極體的封裝結構的示意圖及光線路徑示意圖。如圖1A所示,本發明提供了一種發光二極體的封裝結構1,其包括一發光晶片20及一固定所述發光晶片20的封裝體10。所述封裝體10包括一色轉換層30、一導光件40與一反射件50。所述色轉換層30包覆所述發光晶片20。所述導光件40包覆所述色轉換層30。所述反射件50設置在所述導光件40的上方。在本實施例中,所述發光二極體的封裝結構1能夠使所述發光晶片20發出的光線達到更廣照射範圍。 Please refer to FIG. 1A and FIG. 1B together, which show a schematic diagram of a light emitting diode package structure and a schematic diagram of light paths in the first preferred embodiment of the present invention. As shown in FIG. 1A, the present invention provides a light-emitting diode package structure 1, which includes a light-emitting chip 20 and a package body 10 for fixing the light-emitting chip 20. The package body 10 includes a color conversion layer 30, a light guide 40 and a reflective member 50. The color conversion layer 30 covers the light-emitting chip 20. The light guide 40 covers the color conversion layer 30. The reflecting member 50 is disposed above the light guide member 40. In this embodiment, the light emitting diode package structure 1 can enable the light emitted by the light emitting chip 20 to reach a wider irradiation range.

所述發光晶片20選自水準式發光二極體晶片、垂直式發光二極體晶片或覆晶式發光二極體晶片中一種。可以理解的,所述發光晶片20的使用可以依使用者的需求進行替換。 The light-emitting chip 20 is selected from one of a horizontal light-emitting diode chip, a vertical light-emitting diode chip, or a flip-chip light-emitting diode chip. It is understandable that the use of the light-emitting chip 20 can be replaced according to the needs of users.

所述色轉換層30用於改變所述發光晶片20發出的光線色光。可以理解的,所述色轉換層30可以依據使用者的需要將所述發光晶片20發出的光線顏色改變成所需的色光。 The color conversion layer 30 is used to change the color of light emitted by the light-emitting chip 20. It is understandable that the color conversion layer 30 can change the color of the light emitted by the light-emitting chip 20 into a desired color light according to the needs of the user.

所述導光件40包含矽氧樹脂(即silicone)。本領域技術人員能夠理解,這裡不限於矽氧樹脂,其他可以實現密封所述發光晶片20,且具有高透明度的透光材料也可以用於本發明。所述導光件40可用於引導所述發光晶片20發出的光線的照射範圍,並且能夠引導所述光線到達預設的位置。 The light guide 40 includes silicone. Those skilled in the art can understand that it is not limited to silicone resin, and other light-transmitting materials that can seal the light-emitting chip 20 and have high transparency can also be used in the present invention. The light guide 40 can be used to guide the irradiation range of the light emitted by the light-emitting chip 20, and can guide the light to a preset position.

為了使所述發光晶片20發出的光線能夠均勻地朝所述發光二極體的封裝結構1的外部照射,所述導光件40還進一步包含一附加材料。所述附加材料為所述矽氧樹脂重量的5%~15%。所述附加材料例如是,但是不局限於,有機擴散粒子、無機擴散粒子及其他們之間的組合。 In order to make the light emitted by the light-emitting chip 20 uniformly irradiate the outside of the package structure 1 of the light-emitting diode, the light guide 40 further includes an additional material. The additional material is 5%-15% of the weight of the silicone resin. The additional material is, for example, but not limited to, organic diffusion particles, inorganic diffusion particles, and combinations thereof.

所述矽氧樹脂的折射率為1.4-1.6。所述附加材料的折射率為1.5-1.8。優選的,所述矽氧樹脂的折射率與所述附加材料的折射率互不相同。因此,所述附加材料與所述矽氧樹脂混合後,所述發光晶片20發出的光線經由所述導光件40中的附加材料能夠散射出更均勻的光線。 The refractive index of the silicone resin is 1.4-1.6. The refractive index of the additional material is 1.5-1.8. Preferably, the refractive index of the silicone resin and the refractive index of the additional material are different from each other. Therefore, after the additional material is mixed with the silicone resin, the light emitted by the light-emitting chip 20 can scatter more uniform light through the additional material in the light guide 40.

可以理解的,所述有機擴散粒子包括,但是不局限於,有機矽類化合物及丙烯酸類化合物,所述無機擴散粒子包括,但不局限於,二氧化矽(SiO2)、二氧化鈦(TiO2)或碳酸鈣類化合物。所述有機矽類化合物例如是,但是不局限於,矽橡膠、矽樹脂、矽油。所述丙烯酸類化合物例如是,但是不局限於,丙烯酸樹脂、聚甲基丙烯酸甲酯(PMMA)、聚四氟乙烯(PTFE)。 It is understandable that the organic diffusion particles include, but are not limited to, organosilicon compounds and acrylic compounds, and the inorganic diffusion particles include, but are not limited to, silicon dioxide (SiO 2 ) and titanium dioxide (TiO 2 ). Or calcium carbonate compounds. The organosilicon compound is, for example, but not limited to, silicone rubber, silicone resin, and silicone oil. The acrylic compound is, for example, but not limited to, acrylic resin, polymethylmethacrylate (PMMA), polytetrafluoroethylene (PTFE).

所述導光件40的厚度優選為0.4mm。 The thickness of the light guide 40 is preferably 0.4 mm.

所述反射件50包括一反射表面501。所述反射表面501面向所述發光晶片20。所述反射表面501可為平面或非平面。 The reflecting member 50 includes a reflecting surface 501. The reflective surface 501 faces the light emitting chip 20. The reflective surface 501 may be flat or non-planar.

所述反射件50的厚度優選為0.4mm。 The thickness of the reflector 50 is preferably 0.4 mm.

可以理解的,為了提高所述發光晶片20發出的光線的出光率,所述反射表面501的顏色為淺色系顏色。 It is understandable that, in order to increase the light-emitting rate of the light emitted by the light-emitting chip 20, the color of the reflective surface 501 is a light-colored color.

優選的,所述反射表面501的顏色為銀色或白色。 Preferably, the color of the reflective surface 501 is silver or white.

如圖1B所示,所述發光晶片20發出一光線100,所述光線100通過所述色轉換層30,使所述光線100能夠改變成所需的色光。所述光線100通過所述色轉換層30後進入所述導光件40。可以理解的,所述導光件40能夠使所述光線100在所述導光件40的內部進行導光,直到所述光線100被照射至所述反射件50。當 所述光線100照射所述反射表面501後,大部份所述光線100被反射至所述發光晶片20的周圍。因此,所述發光晶片20發出的光線100進行了第一次反射,並且經由所述反射表面501發出的光線100通過所述導光件40後,能夠使所述光線100向所述封裝體10的外側傳遞更遠的距離。 As shown in FIG. 1B, the light-emitting chip 20 emits a light 100, and the light 100 passes through the color conversion layer 30, so that the light 100 can be changed into a desired color light. The light 100 enters the light guide 40 after passing through the color conversion layer 30. It is understandable that the light guide 40 can guide the light 100 inside the light guide 40 until the light 100 is irradiated to the reflective member 50. when After the light 100 irradiates the reflective surface 501, most of the light 100 is reflected around the light emitting chip 20. Therefore, the light 100 emitted by the light-emitting chip 20 is reflected for the first time, and after the light 100 emitted through the reflective surface 501 passes through the light guide 40, the light 100 can be directed toward the package body 10. The outer side of the transmission distance is greater.

在本實施例中,所述封裝體10還包括一基板60。所述基板60設有一反射表面61。所述基板60的反射表面61正對所述反射件50的反射表面501。所述發光晶片20、所述色轉換層30及導光件40設置在所述基板60的反射表面61上。所述光線100經由所述反射件50的反射表面501反射後,照射於所述基板60的反射表面61;所述光線100經由所述基板60的反射表面61反射後,所述光線100將朝向所述封裝體10的外側進行照射。因此,所述發光二極體的封裝結構1能使所述發光晶片20發出的光線100進行第二次反射,從而能夠形成較廣的照明範圍。 In this embodiment, the package body 10 further includes a substrate 60. The substrate 60 is provided with a reflective surface 61. The reflective surface 61 of the substrate 60 faces the reflective surface 501 of the reflector 50. The light-emitting chip 20, the color conversion layer 30 and the light guide 40 are arranged on the reflective surface 61 of the substrate 60. After the light 100 is reflected by the reflective surface 501 of the reflector 50, it irradiates the reflective surface 61 of the substrate 60; after the light 100 is reflected by the reflective surface 61 of the substrate 60, the light 100 will face The outside of the package 10 is illuminated. Therefore, the encapsulation structure 1 of the light-emitting diode can cause the light 100 emitted by the light-emitting chip 20 to be reflected a second time, thereby forming a wider illumination range.

本發明提供的發光二極體的封裝結構1,所述發光二極體的封裝結構1包括所述導光件40,所述反射件50及所述基板60。所述導光件40形成在所述色轉換層30與所述發光晶片20的外側。所述發光晶片20發出的光線100進入所述導光件40,經由所述導光件40導引照射於所述反射件50,且所述光線100經由所述反射件50的反射表面501進行反射。此時,所述光線100發生第一次反射,且經由所述反射表面501反射的光線100將朝向所述發光晶片20的周圍照射。進一步的,當經由所述反射表面501反射的光線100通過所述導光件40時,所述光線100能夠依據所述導光件40的材料性質傳遞得更遠,因此,所述光線100經由所述反射件50的反射表面501反射的角度範圍能夠更大,從而所述發光晶片20發出的光能夠獲得較廣的照明範圍。 According to the light-emitting diode package structure 1 provided by the present invention, the light-emitting diode package structure 1 includes the light guide 40, the reflector 50 and the substrate 60. The light guide 40 is formed on the outer side of the color conversion layer 30 and the light-emitting chip 20. The light 100 emitted by the light-emitting chip 20 enters the light guide 40, is guided by the light guide 40 and irradiates the reflective member 50, and the light 100 passes through the reflective surface 501 of the reflective member 50 reflection. At this time, the light 100 is reflected for the first time, and the light 100 reflected by the reflective surface 501 will irradiate toward the surrounding of the light-emitting chip 20. Further, when the light 100 reflected by the reflective surface 501 passes through the light guide 40, the light 100 can be transmitted farther according to the material properties of the light guide 40. Therefore, the light 100 passes through The angle range of the reflection surface 501 of the reflector 50 can be larger, so that the light emitted by the light-emitting chip 20 can obtain a wider illumination range.

此外,為了進一步擴大所述發光晶片20發出的光線的照明範圍,所述發光晶片20設置在所述基板60的反射表面61上。因此,經由所述反射件50的反射表面501反射的光線100,通過所述導光件40後,照射至所述基板60的反射表 面61上,此時,所述光線100發生第二次反射,因此,所述光線100的照射範圍相較于現有技術的發光晶片直接發出的光線或經由一次反射的光線的照射範圍更廣。 In addition, in order to further expand the illumination range of the light emitted by the light-emitting chip 20, the light-emitting chip 20 is disposed on the reflective surface 61 of the substrate 60. Therefore, the light 100 reflected by the reflective surface 501 of the reflective member 50 passes through the light guide member 40 and irradiates the reflective surface of the substrate 60. On the surface 61, at this time, the light 100 is reflected for the second time. Therefore, the irradiation range of the light 100 is wider than the irradiation range of the light directly emitted by the light-emitting chip or the light that undergoes a single reflection in the prior art.

請一併參閱圖2A至圖2D,展示了本發明第一實施例中的發光二極體的封裝結構的反射件的第一實施方式至第四實施方式的示意圖。所述發光二極體的封裝結構1的反射件50包括一反射表面501,所述反射表面501正對所述發光晶片20。所述反射表面501可為平面、凹面、凸面、抛物面、多線段面或曲面。所述反射表面501可為對稱面或非對稱面。 Please also refer to FIGS. 2A to 2D, which show schematic diagrams of the first embodiment to the fourth embodiment of the reflector of the light emitting diode package structure in the first embodiment of the present invention. The reflector 50 of the light-emitting diode package structure 1 includes a reflective surface 501, and the reflective surface 501 faces the light-emitting chip 20. The reflective surface 501 may be a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface. The reflective surface 501 may be a symmetrical surface or an asymmetrical surface.

請參閱圖2A,在第一實施方式中,所述反射件50的反射表面501為凹面。所述反射件50設置在所述導光件40的上方。所述導光件40面向所述反射件50的反射表面501的表面具有一凸面結構。所述反射表面501的凹面結構面向所述發光晶片20,因此,所述發光晶片20所發出的光線經由所述反射表面501集中向所述封裝體10的內側反射,從而使得所述光線照射範圍較集中。 Please refer to FIG. 2A. In the first embodiment, the reflective surface 501 of the reflector 50 is a concave surface. The reflecting member 50 is disposed above the light guide member 40. The surface of the light guide 40 facing the reflective surface 501 of the reflector 50 has a convex structure. The concave structure of the reflective surface 501 faces the light-emitting chip 20. Therefore, the light emitted by the light-emitting chip 20 is concentrated and reflected to the inner side of the package body 10 through the reflective surface 501, so that the light irradiation range is More concentrated.

請參閱圖2B,在第二實施方式中,所述反射件50的所述反射表面501為凸面。所述反射件50設置在所述導光件40的上方。所述導光件40面向所述反射件50的反射表面501的表面具有一凹面結構。所述反射表面501的凸面結構面向于所述發光晶片20,因此,所述發光晶片20所發出的光線經由所述反射表面501向所述封裝體10的外側反射,從而使得所述光線照射範圍較廣。 Please refer to FIG. 2B. In the second embodiment, the reflective surface 501 of the reflective member 50 is convex. The reflecting member 50 is disposed above the light guide member 40. The surface of the light guide 40 facing the reflective surface 501 of the reflector 50 has a concave structure. The convex structure of the reflective surface 501 faces the light-emitting chip 20. Therefore, the light emitted by the light-emitting chip 20 is reflected to the outside of the package body 10 via the reflective surface 501, so that the light irradiation range is Wider.

請參閱圖2C,在第三實施方式中,所述反射件50的反射表面501為非對稱面。所述反射表面501的左半側為一凸面,所述反射表面501的右半側為一凹面,所述導光件40面向所述反射件50的凹面與凸面。其中,所述導光件40具有與所述反射件50對應的凹面和凸面結構,在此不再贅述。所述反射表面501的凹、凸面面向所述發光晶片20,因此,所述發光晶片20所發出的光線經由所述反射表面501進行反射,且經由所述反射表面501的凸面的光線向所述封裝體10 的外側反射,而經由所述反射表面501的凹面的光線集中向所述封裝體10的內側反射,從而使得所述光線的照射範圍在所述反射件50的左半側較廣,而在所述反射件50的右半側較窄,從而增加所述光線的照射亮度。 Please refer to FIG. 2C. In the third embodiment, the reflective surface 501 of the reflector 50 is an asymmetric surface. The left half of the reflective surface 501 is a convex surface, the right half of the reflective surface 501 is a concave surface, and the light guide 40 faces the concave and convex surfaces of the reflective member 50. Wherein, the light guide member 40 has a concave surface and a convex surface structure corresponding to the reflection member 50, which will not be repeated here. The concave and convex surfaces of the reflective surface 501 face the light-emitting chip 20. Therefore, the light emitted by the light-emitting chip 20 is reflected by the reflective surface 501, and the light that passes through the convex surface of the reflective surface 501 is directed toward the light-emitting chip 20. Package 10 The light rays passing through the concave surface of the reflective surface 501 are concentrated and reflected toward the inner side of the package body 10, so that the irradiation range of the light rays is wider on the left half of the reflector 50, while The right half of the reflector 50 is narrow, thereby increasing the brightness of the light.

請參閱圖2D,在第四實施方式中,所述反射件50的所述反射表面501為對稱面。所述反射表面501的左半側為一凸面,所述反射表面501的右半側為與所述左半側的凸面呈鏡向設置的另一凸面。所述導光件40具有對稱結構的雙凹面,所述導光件40的雙凹面正對所述反射件50的雙凸面結構,不再贅述。所述反射件50的雙凸面面向所述發光晶片20,因此,所述發光晶片20所發出的光線經由所述反射表面501進行反射,且經由所述反射表面501的左半側的光線向所述封裝體10的外側反射,經由所述反射表面501的右半側的光線也向所述封裝體10的外側反射,從而所述光線的照射範圍在所述反射件50的左半側與右半側相同。由於本實施例的所述反射表面501的中間處內凹,從而使所述光線的整體照射範圍較窄。 Please refer to FIG. 2D. In the fourth embodiment, the reflective surface 501 of the reflective member 50 is a symmetrical surface. The left half of the reflective surface 501 is a convex surface, and the right half of the reflective surface 501 is another convex surface arranged in a mirror direction with the convex surface of the left half. The light guide 40 has a double-concave surface with a symmetrical structure, and the double-concave surface of the light guide 40 faces the double-convex structure of the reflector 50, which will not be repeated. The biconvex surface of the reflector 50 faces the light-emitting chip 20. Therefore, the light emitted by the light-emitting chip 20 is reflected by the reflective surface 501, and the light on the left half of the reflective surface 501 is directed toward the The outside of the package body 10 is reflected, and the light rays passing through the right half of the reflective surface 501 are also reflected to the outside of the package body 10, so that the irradiation range of the light is on the left and right sides of the reflector 50. The same half. Since the middle of the reflective surface 501 in this embodiment is concave, the overall irradiation range of the light is narrow.

請參閱圖3,展示了本發明的第二實施例中的發光二極體的封裝結構2的示意圖。如圖3所示,本實施例提供的發光二極體的封裝結構2與第一實施例的結構基本一致。不同的是,所述色轉換層30與所述導光件40相反設置,也即所述導光件40包覆所述發光晶片20,所述色轉換層30包覆所述導光件40。 Please refer to FIG. 3, which shows a schematic diagram of a light emitting diode packaging structure 2 in a second embodiment of the present invention. As shown in FIG. 3, the light-emitting diode package structure 2 provided by this embodiment is basically the same as the structure of the first embodiment. The difference is that the color conversion layer 30 is arranged opposite to the light guide 40, that is, the light guide 40 covers the light-emitting chip 20, and the color conversion layer 30 covers the light guide 40 .

所述發光晶片20選自水準式發光二極體晶片、垂直式發光二極體晶片或覆晶式發光二極體晶片中一種,所述發光晶片20的使用方式皆可依使用者的需求進行替換。所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。 The light-emitting chip 20 is selected from one of a horizontal light-emitting diode chip, a vertical light-emitting diode chip, or a flip-chip light-emitting diode chip. The light-emitting chip 20 can be used in accordance with the needs of users replace. The reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface.

請參閱圖4,展示了本發明的第三實施例中的發光二極體的封裝結構3的示意圖。如圖4所示,本實施例提供的發光二極體的封裝結構3與第一實施例的結構基本一致。不同的是,所述導光件40未包覆所述色轉換層30。 Please refer to FIG. 4, which shows a schematic diagram of a light emitting diode packaging structure 3 in a third embodiment of the present invention. As shown in FIG. 4, the package structure 3 of the light emitting diode provided in this embodiment is basically the same as the structure of the first embodiment. The difference is that the light guide 40 does not cover the color conversion layer 30.

在本實施例中,所述導光件40設置在所述色轉換層30的上方,並面向所述發光晶片20。所述發光晶片20選自水準式發光二極體晶片、垂直式發光二極體晶片或覆晶式發光二極體晶片中一種,所述發光晶片20的使用方式皆可依使用者的需求進行替換。所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。 In this embodiment, the light guide 40 is disposed above the color conversion layer 30 and faces the light-emitting chip 20. The light-emitting chip 20 is selected from one of a horizontal light-emitting diode chip, a vertical light-emitting diode chip, or a flip-chip light-emitting diode chip. The light-emitting chip 20 can be used in accordance with the needs of users replace. The reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface.

請參閱圖5,展示了本發明的第四實施例中的發光二極體的封裝結構4的示意圖。如圖5所示,本實施例提供的發光二極體的封裝結構4與第一實施例的結構基本一致。不同的是,所述導光件40設置在所述發光晶片20的上方,再經由所述色轉換層30包覆所述導光件40與所述發光晶片20。 Please refer to FIG. 5, which shows a schematic diagram of a light emitting diode packaging structure 4 in a fourth embodiment of the present invention. As shown in FIG. 5, the package structure 4 of the light emitting diode provided by this embodiment is basically the same as the structure of the first embodiment. The difference is that the light guide 40 is disposed above the light emitting chip 20, and then the light guide 40 and the light emitting chip 20 are covered by the color conversion layer 30.

所述發光晶片20選自水準式發光二極體晶片、垂直式發光二極體晶片或覆晶式發光二極體晶片中一種,所述發光晶片20的使用方式皆可依使用者的需求進行替換。所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。 The light-emitting chip 20 is selected from one of a horizontal light-emitting diode chip, a vertical light-emitting diode chip, or a flip-chip light-emitting diode chip. The light-emitting chip 20 can be used in accordance with the needs of users replace. The reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface.

請參閱圖6A至圖6D圖,展示了本發明的第五實施例中的發光二極體的封裝結構5的示意圖及光線路徑示意圖。如圖6A所示,本實施例提供另一種發光二極體的封裝結構5,其包括一發光晶片20A及一固定所述發光晶片20A的封裝體10A。所述封裝體10A包括一色轉換層30A、一導光件40A及一反射件50A。所 述色轉換層30A包覆所述發光晶片20A。所述導光件40A環設於所述色轉換層30A的周圍,所述反射件50A設置在所述導光件40A的內側表面。所述反射件50A環繞設置在所述發光晶片20A的周圍。 Please refer to FIGS. 6A to 6D, which show a schematic diagram of a light emitting diode packaging structure 5 and a schematic diagram of light paths in a fifth embodiment of the present invention. As shown in FIG. 6A, this embodiment provides another light-emitting diode package structure 5, which includes a light-emitting chip 20A and a package body 10A for fixing the light-emitting chip 20A. The package body 10A includes a color conversion layer 30A, a light guide 40A, and a reflective member 50A. So The color conversion layer 30A covers the light-emitting chip 20A. The light guide 40A is arranged around the color conversion layer 30A, and the reflector 50A is arranged on the inner surface of the light guide 40A. The reflector 50A is arranged around the light emitting chip 20A.

可以理解的,為了提高出光效率,所述反射件50A的橫截面的寬度自遠離所述發光晶片20A的方向逐漸增加。 It can be understood that, in order to improve the light extraction efficiency, the width of the cross section of the reflector 50A gradually increases from a direction away from the light emitting chip 20A.

所述反射件50A包括面向所述發光晶片20A的一反射表面501A。所述反射表面501A與所述導光件40A的底面形成一夾角α。 The reflective member 50A includes a reflective surface 501A facing the light-emitting chip 20A. The reflective surface 501A and the bottom surface of the light guide 40A form an included angle α.

優選的,所述夾角α為呈鈍角,因此,經由所述發光晶片20A發出的光線,照射至所述反射表面501A後,會朝著所述封裝體10A的外界發生反射。 Preferably, the included angle α is an obtuse angle. Therefore, the light emitted by the light-emitting chip 20A will be reflected toward the outside of the package 10A after being irradiated on the reflective surface 501A.

所述反射表面501A為平面或非平面。所述反射表面501A的顏色為淺色系。 The reflective surface 501A is flat or non-planar. The color of the reflective surface 501A is light-colored.

優選的,所述反射表面501A的顏色為銀色系或白色系。 Preferably, the color of the reflective surface 501A is silver or white.

如圖6B所示,所述發光晶片20A所發出的一光線100A通過所述色轉換層30A,使所述光線100A能改變成所需的色光。一部分所述光線100A直接地向所述封裝體10A的外界照射,另一部分所述光線100A照射於所述反射件50A的反射表面501A並發生反射,且所述光線100A能夠間接地朝所述封裝體10A的外界發生照射,從而使得所述光線100A照射範圍較廣。 As shown in FIG. 6B, a light 100A emitted by the light-emitting chip 20A passes through the color conversion layer 30A, so that the light 100A can be changed into a desired color light. A part of the light 100A directly irradiates the outside of the package 10A, another part of the light 100A irradiates and reflects on the reflective surface 501A of the reflector 50A, and the light 100A can indirectly face the package The outside of the body 10A is irradiated, so that the light 100A irradiates a wider range.

請一併參閱圖6C與圖6D,展示了本發明的第五實施例中的發光二極體的封裝結構5的反射件角度的第一實施方式與第二實施方式的俯視圖。在所述導光件40A與所述反射件50A的組合結構中,所述導光件40A環設於所述色轉換層30A的側邊。所述反射件50A設置在所述導光件40A的內側表面。 Please refer to FIGS. 6C and 6D together, which show the top views of the first embodiment and the second embodiment of the angle of the reflector of the light-emitting diode packaging structure 5 in the fifth embodiment of the present invention. In the combined structure of the light guide 40A and the reflective member 50A, the light guide 40A is arranged around the side of the color conversion layer 30A. The reflecting member 50A is disposed on the inner surface of the light guide member 40A.

如圖6C所示,在第一實施方式中,所述反射件50A包括前板51A、後板52A、第一側板53A及第二側板54A。所述前板51A、所述後板52A、所述第一側板53A及所述第二側板54A可呈梯形結構。所述前板51A與後板52A,及所述第一 側板53A與所述第二側板54A均可為對稱結構或非對稱結構。在本實施例中,所述前板51A與後板52A呈對稱分佈,且所述第一側板53A與所述第二側板54A也呈對稱分佈。所述前板51A或後板52A的大小不同於第一側板53A或第二側板54A。所述反射件50的底部和/或頂部呈一矩形結構。每一梯形結構具有一較寬的頂端部55A和一較窄的底端部56A,以促使所述發光晶片20A發出的光更多照射至所述反射件50A的反射表面501A上,從而照射至所述反射表面501A的光大部分朝所述封裝體10A的外部反射。所述後板52A、所述第一側板53A及所述第二側板54A的內側表面共同圍成所述反射件50A的反射表面501A。所述反射表面501A是封閉的且連續的結構面,以促進所述發光晶片20A所照射的光大部分朝所述封裝體10A的外部照射。 As shown in FIG. 6C, in the first embodiment, the reflector 50A includes a front plate 51A, a rear plate 52A, a first side plate 53A, and a second side plate 54A. The front panel 51A, the rear panel 52A, the first side panel 53A, and the second side panel 54A may have a trapezoidal structure. The front plate 51A and the rear plate 52A, and the first Both the side plate 53A and the second side plate 54A can have a symmetric structure or an asymmetric structure. In this embodiment, the front plate 51A and the rear plate 52A are symmetrically distributed, and the first side plate 53A and the second side plate 54A are also symmetrically distributed. The size of the front plate 51A or the rear plate 52A is different from the first side plate 53A or the second side plate 54A. The bottom and/or top of the reflector 50 has a rectangular structure. Each trapezoidal structure has a wider top end 55A and a narrower bottom end 56A to promote the light emitted by the light-emitting chip 20A to irradiate more light to the reflective surface 501A of the reflector 50A, thereby irradiating to Most of the light of the reflective surface 501A is reflected toward the outside of the package 10A. The inner surfaces of the rear plate 52A, the first side plate 53A, and the second side plate 54A collectively enclose the reflective surface 501A of the reflector 50A. The reflective surface 501A is a closed and continuous structural surface to promote most of the light irradiated by the light-emitting chip 20A to irradiate to the outside of the package 10A.

可以理解的,在其他實施例中,所述後板52A、所述第一側板53A及所述第二側板54A的結構也可設置為任意的形狀,只要所述發光晶片20A所發出的光能夠更多的朝所述封裝體10A的外部照射即可。 It is understandable that in other embodiments, the structure of the rear plate 52A, the first side plate 53A, and the second side plate 54A can also be set in any shape, as long as the light emitted by the light-emitting chip 20A can It is sufficient to irradiate more toward the outside of the package 10A.

如圖6D所示,在第二實施方式中,所述反射件50A的結構與圖6C中反射件50A的結構大致一樣。不同的是,所述前板51A、所述後板52A、所述第一側板53A及所述第二側板54A的大小一致。所述反射件50A的所述反射件50的底部和/或頂部呈一正方形結構。在實施例中,每一梯形都是等腰梯形結構。每一梯形於靠近所述發光晶片20A處具有一底角β。所述底角β的角度設置可以隨使用者的需求進行調整,當所述發光晶片20A發出光線後,所述光線會形成不同的出光角度與光型。 As shown in FIG. 6D, in the second embodiment, the structure of the reflector 50A is substantially the same as the structure of the reflector 50A in FIG. 6C. The difference is that the front plate 51A, the rear plate 52A, the first side plate 53A, and the second side plate 54A have the same size. The bottom and/or top of the reflecting member 50 of the reflecting member 50A is a square structure. In the embodiment, each trapezoid is an isosceles trapezoid structure. Each trapezoid has a bottom angle β near the light-emitting chip 20A. The angle setting of the bottom angle β can be adjusted according to the needs of users. When the light-emitting chip 20A emits light, the light will form different light-emitting angles and light patterns.

可以理解的,本發明的所述發光晶片20A選自水準式發光二極體晶片、垂直式發光二極體晶片或覆晶式發光二極體晶片中一種。所述發光晶片20的使用方式皆可依使用者的需求進行替換,且上述使用方式皆可依使用者的需求進行替換,而其結構方式在此不再贅述。 It is understandable that the light-emitting chip 20A of the present invention is selected from one of a horizontal light-emitting diode chip, a vertical light-emitting diode chip, or a flip-chip light-emitting diode chip. The use of the light-emitting chip 20 can be replaced according to the user's needs, and the above-mentioned use methods can all be replaced according to the user's needs, and its structure is not repeated here.

請一併參閱圖7A至圖7C,本發明的第五實施例中的發光二極體的封裝結構5的反射件的第一實施方式到第三實施方式的示意圖。所述反射件50A包括一反射表面501A。所述反射表面501A環設于所述發光晶片20A的周圍,所述反射表面501A可為非平面。所述反射表面501A還可為平面、凹面、凸面、抛物面、多線段面或曲面。進一步的,所述反射表面501A可為對稱面或非對稱面。 Please also refer to FIGS. 7A to 7C, which are schematic diagrams of the first embodiment to the third embodiment of the reflector of the light emitting diode packaging structure 5 in the fifth embodiment of the present invention. The reflecting member 50A includes a reflecting surface 501A. The reflective surface 501A is arranged around the light emitting chip 20A, and the reflective surface 501A may be non-planar. The reflective surface 501A may also be a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface. Further, the reflective surface 501A may be a symmetrical surface or an asymmetrical surface.

可以理解的,在其他實施例中,所述反射表面501A的結構形狀可以依據使用者的需求進行改變,因此,所述反射表面501A的結構不局限於上述實施例所示結構為固定形式。此外,在其他實施例中,所述導光件40A與所述反射件50A的組合結構不局限於上述實施例所示結構為固定形式,所述反射件50A的左、右、前及後側的梯形面的底角角度能夠根據使用者的需求進行調整。 It is understandable that in other embodiments, the structure and shape of the reflective surface 501A can be changed according to the user's needs. Therefore, the structure of the reflective surface 501A is not limited to the fixed structure shown in the foregoing embodiments. In addition, in other embodiments, the combined structure of the light guide member 40A and the reflective member 50A is not limited to the fixed structure shown in the above embodiment. The left, right, front and rear sides of the reflective member 50A The bottom angle of the trapezoidal surface can be adjusted according to the needs of users.

請參閱圖7A,在第一實施方式中,所述反射件50A的反射表面501A為凸面。所述發光晶片20A朝所述反射件50A照射的光線(圖中未示)經由所述反射件50A的反射表面501A進行反射。所述反射表面501A的凸面結構能夠使所述發光晶片20A發出的光線朝所述封裝體10A的外界方向照射,從而使所述發光晶片20A能夠發射較廣的光線照射範圍。 Please refer to FIG. 7A. In the first embodiment, the reflective surface 501A of the reflector 50A is convex. The light (not shown) irradiated by the light-emitting chip 20A toward the reflector 50A is reflected by the reflective surface 501A of the reflector 50A. The convex structure of the reflective surface 501A can make the light emitted by the light-emitting chip 20A irradiate toward the outside of the package 10A, so that the light-emitting chip 20A can emit a wider light irradiation range.

請參閱圖7B,在第二實施方式中,所述反射件50A的反射表面501A為凹面。所述發光晶片20A朝所述反射件50A照射的光線經由所述反射件50A的反射表面501A進行反射。所述反射表面501A的凹面結構能夠使使所述發光晶片20A發出的光線朝所述封裝體10A的內側方向集中照射,從而使得所述發光晶片20A能夠發射較亮的光線亮度,但所述發光晶片20A發射較窄的光線照射範圍。 Please refer to FIG. 7B. In the second embodiment, the reflective surface 501A of the reflective member 50A is concave. The light irradiated by the light-emitting chip 20A toward the reflector 50A is reflected by the reflective surface 501A of the reflector 50A. The concave structure of the reflective surface 501A can make the light emitted by the light-emitting chip 20A radiate concentratedly toward the inner side of the package body 10A, so that the light-emitting chip 20A can emit brighter light brightness, but the light The wafer 20A emits a narrow light irradiation range.

請參閱圖7C,在第三實施方式中,所述反射件50A的反射表面501A為一平面。所述反射表面501A與所述發光晶片20A所在平面形成面向所述發光晶片20A的一夾角α。優選的,所述夾角α為鈍角。所述發光晶片20A向周圍照射的光線經由所述反射件50A的反射表面501A進行反射。可以理解的,當所述反射 表面501A與所述發光晶片20A所在平面形成的夾角α的角度較小時,所述光線的照射方向朝所述封裝體10A的內側集中照射,因此,所述發光晶片20A能夠發射較亮的光線亮度,但所述發光晶片20A發射較窄的光線照射範圍。當所述反射表面501A與所述發光晶片20A所在平面形成的夾角α的角度較大時,所述光線的照射方向朝所述封裝體10A的外界照射,因此,所述發光晶片20A能夠發射較廣的光線照射範圍。 Please refer to FIG. 7C. In the third embodiment, the reflective surface 501A of the reflective member 50A is a flat surface. The reflective surface 501A and the plane where the light-emitting chip 20A is located form an angle α facing the light-emitting chip 20A. Preferably, the included angle α is an obtuse angle. The light irradiated by the light-emitting chip 20A to the surroundings is reflected by the reflective surface 501A of the reflector 50A. Understandably, when the reflection When the angle α formed by the surface 501A and the plane where the light-emitting chip 20A is located is small, the irradiation direction of the light is concentrated toward the inside of the package body 10A, so the light-emitting chip 20A can emit brighter light Brightness, but the light-emitting chip 20A emits a narrow light irradiation range. When the angle α formed by the reflective surface 501A and the plane where the light-emitting chip 20A is located is large, the irradiation direction of the light is irradiated to the outside of the package body 10A. Therefore, the light-emitting chip 20A can emit more Wide light exposure range.

請一併參閱圖8A至圖8F,本發明的第五實施例中的發光二極體的封裝結構5的導光件的第一實施方式到第六實施方式的示意圖。所述色轉換層30A包覆所述發光晶片20A,所述反射件50A環設於所述色轉換層30A的側邊。所述導光件40A包覆所述色轉換層30A與所述反射件50A的周圍。所述導光件40A包括一出光面401A。所述出光面401A面向所述發光晶片20A。所述出光面401A為一連續結構面或一不連續結構面。所述連續結構面與所述不連續結構面均可為平面、圓弧面、圓弧柱面與V形槽面。 Please also refer to FIGS. 8A to 8F, which are schematic diagrams of the first embodiment to the sixth embodiment of the light guide member of the light emitting diode packaging structure 5 in the fifth embodiment of the present invention. The color conversion layer 30A covers the light-emitting chip 20A, and the reflector 50A is arranged around the side of the color conversion layer 30A. The light guide 40A covers the color conversion layer 30A and the reflection member 50A. The light guide 40A includes a light emitting surface 401A. The light emitting surface 401A faces the light emitting chip 20A. The light-emitting surface 401A is a continuous structure surface or a discontinuous structure surface. Both the continuous structure surface and the discontinuous structure surface may be flat, circular arc, circular cylindrical, and V-shaped groove surfaces.

如圖8A所示,在第一實施方式,所述導光件40A的出光面401A為平面。如圖8B所示,在第二實施方式,所述導光件40A的出光面401A為圓弧面。如圖8C所示,在第三實施方式,所述導光件40A的出光面401A為不連續V形槽面。如圖8D所示,在第四實施方式,所述導光件40A的出光面401A為不連續圓弧面。如圖8E所示,在第五實施方式,所述導光件40A的出光面401A為不連續圓弧柱面。如圖8F所示,在第六實施方式,所述導光件40A的出光面401A為連續V形槽面。所述出光面401A設有圓弧面或圓弧柱面結構,能夠改變所述發光晶片20A發出光線的導光路徑及光型。 As shown in FIG. 8A, in the first embodiment, the light-emitting surface 401A of the light guide 40A is flat. As shown in FIG. 8B, in the second embodiment, the light-emitting surface 401A of the light guide 40A is a circular arc surface. As shown in FIG. 8C, in the third embodiment, the light-emitting surface 401A of the light guide 40A is a discontinuous V-shaped groove surface. As shown in FIG. 8D, in the fourth embodiment, the light-emitting surface 401A of the light guide 40A is a discontinuous arc surface. As shown in FIG. 8E, in the fifth embodiment, the light exit surface 401A of the light guide 40A is a discontinuous circular arc cylindrical surface. As shown in FIG. 8F, in the sixth embodiment, the light-emitting surface 401A of the light guide 40A is a continuous V-shaped groove surface. The light emitting surface 401A is provided with a circular arc surface or a circular cylindrical surface structure, which can change the light guide path and the light type of the light emitted by the light emitting chip 20A.

請一併參閱圖9A和圖9B,展示了本發明的第六實施例中的發光二極體的封裝結構6的第一實施方式到第二實施方式的示意圖。本實施例提供的發光二極體的封裝結構6與第一實施例的結構基本一致。所述反射件50包括一遠離所述 導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述反射件50於所述發光晶片20的正上方設有一使得所述導光件40露出的溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70貫穿所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述反射件50的下表面52。 Please refer to FIGS. 9A and 9B together, which show schematic diagrams of the first embodiment to the second embodiment of the light-emitting diode package structure 6 in the sixth embodiment of the present invention. The package structure 6 of the light emitting diode provided in this embodiment is basically the same as the structure of the first embodiment. The reflector 50 includes a The upper surface 51 of the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the reflector 50 is provided with a groove 70 directly above the light-emitting chip 20 to expose the light guide member 40, and the width of the groove 70 is smaller than the width of the light-emitting chip 20, so The groove 70 penetrates the upper surface 51 and the lower surface 52 of the reflector 50. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 52 of the reflector 50.

可以理解的,所述溝槽70設置在所述發光晶片20的正上方,以使所述發光晶片20發出的光線透過所述溝槽70,從而解決當所述出光面全為反射表面時造成所述發光晶片20的上方過暗的問題。 It is understandable that the groove 70 is arranged directly above the light-emitting chip 20 to allow the light emitted by the light-emitting chip 20 to pass through the groove 70, so as to solve the problem when the light-emitting surface is a reflective surface. The problem that the top of the light-emitting chip 20 is too dark.

為了保證所述發光晶片20發出的光能夠均勻地發散,所述溝槽70呈對稱分佈。所述溝槽70例如是,但不局限於,十字型溝槽、圓型溝槽。 In order to ensure that the light emitted by the light-emitting chip 20 can diverge uniformly, the grooves 70 are distributed symmetrically. The groove 70 is, for example, but not limited to, a cross-shaped groove and a round groove.

所述溝槽的寬度約為0.05mm-0.3mm。 The width of the groove is about 0.05mm-0.3mm.

所述反射件50的上表面51為一平面,所述反射件50的下表面52為所述反射表面501。所述反射件50的上表面51正對所述反射件50的下表面52。 The upper surface 51 of the reflecting member 50 is a flat surface, and the lower surface 52 of the reflecting member 50 is the reflecting surface 501. The upper surface 51 of the reflector 50 is directly opposite to the lower surface 52 of the reflector 50.

所述溝槽70包括兩相對的側壁701。所述側壁701與所述反射件50的上表面形成背向所述溝槽70的一夾角γ。所述夾角γ的角度範圍為大於或等於90度且小於180度。當所述反射件50的反射表面501為一平面時,所述側壁701垂直所述反射表面501。 The trench 70 includes two opposite sidewalls 701. The side wall 701 and the upper surface of the reflector 50 form an included angle γ that faces away from the groove 70. The angle range of the included angle γ is greater than or equal to 90 degrees and less than 180 degrees. When the reflective surface 501 of the reflector 50 is a flat surface, the side wall 701 is perpendicular to the reflective surface 501.

所述溝槽70包括一上端部702和一下端部703。所述上端部702為遠離所述導光件40的一端,所述下端部703靠近所述導光件40。所述上端部702的寬度大於或等於所述下端部703的寬度。 The groove 70 includes an upper end 702 and a lower end 703. The upper end 702 is an end away from the light guide 40, and the lower end 703 is close to the light guide 40. The width of the upper end 702 is greater than or equal to the width of the lower end 703.

可以理解的,為了提高所述發光晶片20的光照範圍,所述溝槽70的橫截面的寬度自遠離所述發光晶片20A的方向逐漸增加。 It can be understood that, in order to increase the illumination range of the light-emitting chip 20, the width of the cross section of the groove 70 gradually increases from a direction away from the light-emitting chip 20A.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表 面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflection table of the reflecting part 50 The surface 501 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, and a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface.

如圖9A所示,在本實例中,所述側壁701與所述反射件50的上表面形成的夾角γ為90度,也即所述側壁701垂直於所述反射件50的反射表面501。所述上端部702的寬度等於所述下端部703的寬度。所述溝槽70的橫截面積為一矩形結構。 As shown in FIG. 9A, in this example, the angle γ formed by the side wall 701 and the upper surface of the reflector 50 is 90 degrees, that is, the side wall 701 is perpendicular to the reflective surface 501 of the reflector 50. The width of the upper end 702 is equal to the width of the lower end 703. The cross-sectional area of the groove 70 is a rectangular structure.

如圖9B所示,在本實施例中,所述側壁701與所述反射件50的上表面形成的夾角γ大於90度,也即所述上端部702的寬度大於所述下端部703的寬度。在本實施例中。所述溝槽70的橫截面積為一倒梯形結構。 As shown in FIG. 9B, in this embodiment, the angle γ formed by the side wall 701 and the upper surface of the reflector 50 is greater than 90 degrees, that is, the width of the upper end 702 is greater than the width of the lower end 703 . In this embodiment. The cross-sectional area of the groove 70 is an inverted trapezoid structure.

可以理解的,所述倒梯形結構可以為等腰梯形結構,也可以為非等腰梯形結構。 It is understandable that the inverted trapezoid structure may be an isosceles trapezoid structure or a non-isosceles trapezoid structure.

請一併參閱圖10A和圖10B,展示了本發明的第六實施例中的溝槽的第一實施方式到第二實施方式的俯視圖。 Please refer to FIGS. 10A and 10B together, which show top views of the first embodiment to the second embodiment of the groove in the sixth embodiment of the present invention.

如圖10A所示,所述溝槽70為十字型溝槽。所述十字型溝槽將所述反射件50分割成尺寸相同且呈對稱分佈的四個反射區503,因此所述發光晶片20發出的光經由所述反射區503發射的光線能夠均勻地向四周照射。所述十字型溝槽的連接處面向所述發光晶片20的中心。因此,經由所述發光晶片20發出的光部分地經由所述溝槽70照射至所述封裝體10的外界,以進一步提高發光亮度。 As shown in FIG. 10A, the groove 70 is a cross-shaped groove. The cross-shaped groove divides the reflector 50 into four reflecting areas 503 with the same size and symmetrically distributed. Therefore, the light emitted by the light-emitting chip 20 can be evenly distributed to the surrounding area through the reflecting area 503. Irradiation. The junction of the cross-shaped groove faces the center of the light-emitting chip 20. Therefore, the light emitted through the light-emitting chip 20 is partially irradiated to the outside of the package body 10 through the groove 70 to further improve the light-emitting brightness.

如圖10B所示,在本實施例中,所述溝槽70為圓型溝槽。所述圓型溝槽設置在所述發光晶片20的正上方。所述圓型溝槽將所述反射件50分割成一反射區503。所述圓型溝槽的半徑範圍為0.1nm-0.3nm,以使得所述發光晶片20發出的光部分地經由所述溝槽70照射至所述封裝體10的外界,以進一步提高發光亮度。 As shown in FIG. 10B, in this embodiment, the groove 70 is a circular groove. The circular groove is arranged directly above the light-emitting chip 20. The circular groove divides the reflecting member 50 into a reflecting area 503. The radius of the circular groove is in the range of 0.1 nm-0.3 nm, so that the light emitted by the light-emitting chip 20 is partially irradiated to the outside of the package body 10 through the groove 70 to further improve the luminous brightness.

請參閱圖11A和圖11B,展示了本發明的第七實施例中的發光二極體的封裝結構7的第一實施方式和第二實施方式的示意圖。本實施例提供的發光二極 體的封裝結構7與第一實施例的結構基本一致。所述發光晶片20包括一與所述色轉換層30接觸且與所述反射件50的反射表面501相對的上表面21。所述色轉換層30包括一與所述導光件40接觸且與所述發光晶片20的上表面21相對的上表面31。所述色轉換層30的上表面31背離所述發光晶片20且與所述反射件50的反射表面501相對。所述導光件40包括一與所述反射件50接觸的上表面41和一與所述色轉換層30的上表面31接觸的下表面42。所述反射件50包括一遠離所述導光件40的上表面51和一與所述導光件40接觸的下表面52。不同的是,所述發光二極體的封裝結構7於所述發光晶片20的正上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70自所述反射件50的所述上表面51貫穿進入所述導光件40,其分別貫穿所述導光件40的上表面41和下表面42及所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的下表面42。 Please refer to FIG. 11A and FIG. 11B, which show schematic diagrams of the first embodiment and the second embodiment of the light-emitting diode packaging structure 7 in the seventh embodiment of the present invention. The light-emitting diode provided in this embodiment The package structure 7 of the body is basically the same as that of the first embodiment. The light-emitting chip 20 includes an upper surface 21 that is in contact with the color conversion layer 30 and is opposite to the reflective surface 501 of the reflector 50. The color conversion layer 30 includes an upper surface 31 in contact with the light guide 40 and opposite to the upper surface 21 of the light-emitting chip 20. The upper surface 31 of the color conversion layer 30 faces away from the light-emitting chip 20 and is opposite to the reflective surface 501 of the reflector 50. The light guide 40 includes an upper surface 41 in contact with the reflective member 50 and a lower surface 42 in contact with the upper surface 31 of the color conversion layer 30. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 in contact with the light guide 40. The difference is that the package structure 7 of the light-emitting diode is provided with a groove 70 directly above the light-emitting chip 20, and the width of the groove 70 is smaller than the width of the light-emitting chip 20. The upper surface 51 of the reflector 50 penetrates into the light guide 40, which penetrates the upper surface 41 and the lower surface 42 of the light guide 40 and the upper surface 51 and the lower surface of the reflector 50, respectively. Surface 52. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 42 of the light guide 40.

所述反射件50的上表面為一平面,所述反射件50的下表面為所述反射表面501。所述反射件50的上表面51正對所述反射件50的下表面52。 The upper surface of the reflecting member 50 is a flat surface, and the lower surface of the reflecting member 50 is the reflecting surface 501. The upper surface 51 of the reflector 50 is directly opposite to the lower surface 52 of the reflector 50.

所述溝槽70包括兩相對的側壁701。所述側壁701與所述反射件50的上表面形成一背向所述溝槽70的夾角γ。所述夾角γ的角度範圍為大於等於90度且小於180度。 The trench 70 includes two opposite sidewalls 701. The sidewall 701 and the upper surface of the reflector 50 form an included angle γ that faces away from the groove 70. The angle range of the included angle γ is greater than or equal to 90 degrees and less than 180 degrees.

所述溝槽70包括一上端部702和一下端部703。所述上端部702為遠離所述色轉換層30的一端,所述下端部703靠近所述色轉換層30。所述上端部702的寬度大於或等於所述下端部703的寬度。 The groove 70 includes an upper end 702 and a lower end 703. The upper end 702 is an end away from the color conversion layer 30, and the lower end 703 is close to the color conversion layer 30. The width of the upper end 702 is greater than or equal to the width of the lower end 703.

如圖11A所示,在第一實施方式中,所述側壁701與所述反射件50的上表面形成的夾角γ為90度,也即所述側壁701垂直於所述反射件50的上表面。所述上端部702的寬度等於所述下端部703的寬度。所述溝槽70的橫截面積為一矩形結構。 As shown in FIG. 11A, in the first embodiment, the angle γ formed by the side wall 701 and the upper surface of the reflector 50 is 90 degrees, that is, the side wall 701 is perpendicular to the upper surface of the reflector 50 . The width of the upper end 702 is equal to the width of the lower end 703. The cross-sectional area of the groove 70 is a rectangular structure.

如圖11B所示,在第二實方式中,所述側壁701與所述反射件50的上表面形成的夾角γ大於90度。 As shown in FIG. 11B, in the second actual manner, the angle γ formed by the side wall 701 and the upper surface of the reflector 50 is greater than 90 degrees.

可以理解的,為了提高出光效率,所述溝槽70的橫截面的寬度自遠離所述發光晶片20A的方向逐漸增加,也即所述上端部702的寬度大於所述下端部703的寬度。在本實施例中,所述溝槽70的橫截面積為一倒梯形結構。 It can be understood that in order to improve the light extraction efficiency, the width of the cross section of the groove 70 gradually increases from the direction away from the light-emitting chip 20A, that is, the width of the upper end 702 is greater than the width of the lower end 703. In this embodiment, the cross-sectional area of the trench 70 is an inverted trapezoid structure.

可以理解的,所述倒梯形結構可以為等腰梯形結構,也可以為非等腰梯形結構。 It is understandable that the inverted trapezoid structure may be an isosceles trapezoid structure or a non-isosceles trapezoid structure.

所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface.

請參閱圖12,展示了本發明的第八實施例中的發光二極體的封裝結構8的示意圖。本實施例提供的發光二極體的封裝結構8與第七實施例的結構基本一致。所述發光晶片20包括一與所述色轉換層30接觸且與所述反射件50的反射表面501相對的上表面21。所述色轉換層30包括一與所述導光件40接觸且與所述發光晶片20的上表面21相對的上表面31。所述色轉換層30的上表面31背離所述發光晶片20且與所述反射件50的反射表面501相對。所述導光件40包括一接觸所述反射件50的上表面41和一接觸所述色轉換層30的上表面31的下表面42。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述發光二極體的封裝結構7於所述發光晶片20的正上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70自所述反 射件50的所述上表面51貫穿進入所述導光件40,其分別貫穿所述反射件50的上表面和下表面及所述導光件40的上表面。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的上表面41。 Please refer to FIG. 12, which shows a schematic diagram of a light emitting diode packaging structure 8 in an eighth embodiment of the present invention. The package structure 8 of the light emitting diode provided by this embodiment is basically the same as the structure of the seventh embodiment. The light-emitting chip 20 includes an upper surface 21 that is in contact with the color conversion layer 30 and is opposite to the reflective surface 501 of the reflector 50. The color conversion layer 30 includes an upper surface 31 in contact with the light guide 40 and opposite to the upper surface 21 of the light-emitting chip 20. The upper surface 31 of the color conversion layer 30 faces away from the light-emitting chip 20 and is opposite to the reflective surface 501 of the reflector 50. The light guide 40 includes an upper surface 41 contacting the reflecting member 50 and a lower surface 42 contacting the upper surface 31 of the color conversion layer 30. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the package structure 7 of the light-emitting diode is provided with a groove 70 directly above the light-emitting chip 20, and the width of the groove 70 is smaller than the width of the light-emitting chip 20. Self-evident The upper surface 51 of the projection member 50 penetrates into the light guide member 40, and penetrates the upper surface and the lower surface of the reflective member 50 and the upper surface of the light guide member 40 respectively. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the upper surface 41 of the light guide 40.

可以理解的,所述溝槽70能夠自所述反射件50的上表面51貫穿至所述導光件40的上表面41與下表面42之間的一預設位置。 It can be understood that the groove 70 can penetrate from the upper surface 51 of the reflector 50 to a predetermined position between the upper surface 41 and the lower surface 42 of the light guide 40.

優選的,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的上表面41與下表面42的中間位置。 Preferably, the groove 70 penetrates from the upper surface 51 of the reflector 50 to an intermediate position between the upper surface 41 and the lower surface 42 of the light guide 40.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

請參閱圖13,展示了本發明的第九實施例中的發光二極體的封裝結構9的示意圖。本實施例提供的發光二極體的封裝結構9與第二實施例的結構基本一致。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述反射件50於所述發光晶片20的正上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70貫穿所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述反射件50的下表面52。 Please refer to FIG. 13, which shows a schematic diagram of a light emitting diode package structure 9 in a ninth embodiment of the present invention. The package structure 9 of the light-emitting diode provided by this embodiment is basically the same as the structure of the second embodiment. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the reflector 50 is provided with a groove 70 directly above the light-emitting chip 20, the width of the groove 70 is smaller than the width of the light-emitting chip 20, and the groove 70 penetrates the reflector 50 of the upper surface 51 and the lower surface 52. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 52 of the reflector 50.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和 第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the sixth embodiment The second embodiment or its combination changes. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

請參閱圖14,展示了本發明的第十實施例中的發光二極體的封裝結構10的第一實施方式的示意圖。本實施例提供的發光二極體的封裝結構10與第三實施例的結構基本一致。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述反射件50於所述發光晶片20的正上方設有一使得所述導光件40露出的溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70貫穿所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述反射件50的下表面52。 Please refer to FIG. 14, which shows a schematic diagram of the first embodiment of the light emitting diode package structure 10 in the tenth embodiment of the present invention. The package structure 10 of the light emitting diode provided in this embodiment is basically the same as the structure of the third embodiment. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the reflector 50 is provided with a groove 70 directly above the light-emitting chip 20 to expose the light guide member 40, and the width of the groove 70 is smaller than the width of the light-emitting chip 20, so The groove 70 penetrates the upper surface 51 and the lower surface 52 of the reflector 50. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 52 of the reflector 50.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

請參閱圖15,展示了本發明的第十一實施例中的發光二極體的封裝結構11的第二實施方式的示意圖。本實施例提供的發光二極體的封裝結構11與第三實施例的結構基本一致。所述發光晶片20包括一與所述色轉換層30接觸且與所述反射件50的反射表面501相對的上表面21。所述色轉換層30包括一與所述導光件40接觸且與所述發光晶片20的上表面21相對的上表面31。所述色轉換層30的上表面31背離所述發光晶片20且與所述反射件50的反射表面501相對。所述導光件40包括一接觸所述反射件50的上表面41和一接觸所述色轉換層30的下表面42。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述發光二極體的封裝結構11於所述發光晶片20的正 上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70自所述反射件50的所述上表面51貫穿進入所述導光件40,其分別貫穿所述導光件40的上表面41和下表面42及所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的下表面42。 Please refer to FIG. 15, which shows a schematic diagram of a second embodiment of the light emitting diode package structure 11 in the eleventh embodiment of the present invention. The package structure 11 of the light emitting diode provided in this embodiment is basically the same as the structure of the third embodiment. The light-emitting chip 20 includes an upper surface 21 that is in contact with the color conversion layer 30 and is opposite to the reflective surface 501 of the reflector 50. The color conversion layer 30 includes an upper surface 31 in contact with the light guide 40 and opposite to the upper surface 21 of the light-emitting chip 20. The upper surface 31 of the color conversion layer 30 faces away from the light-emitting chip 20 and is opposite to the reflective surface 501 of the reflector 50. The light guide 40 includes an upper surface 41 contacting the reflective member 50 and a lower surface 42 contacting the color conversion layer 30. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the package structure 11 of the light-emitting diode is on the front side of the light-emitting chip 20. A groove 70 is provided above, the width of the groove 70 is smaller than the width of the light-emitting chip 20, the groove 70 penetrates into the light guide 40 from the upper surface 51 of the reflector 50, and The upper surface 41 and the lower surface 42 of the light guide 40 and the upper surface 51 and the lower surface 52 of the reflector 50 are respectively penetrated. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 42 of the light guide 40.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

請參閱圖16,展示了本發明的第十二實施例中的發光二極體的封裝結構12的第二實施方式的示意圖。本實施例提供的發光二極體的封裝結構12與第三實施例的結構基本一致。所述發光晶片20包括一與所述色轉換層30接觸且與所述反射件50的反射表面501相對的上表面21。所述色轉換層30包括一與所述導光件40接觸且與所述發光晶片20的上表面21相對的上表面31。所述色轉換層30的上表面31背離所述發光晶片20且與所述反射件50的反射表面501相對。所述導光件40包括一接觸所述反射件50的上表面41和一接觸所述色轉換層30的下表面42。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述發光二極體的封裝結構12於所述發光晶片20的正上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70自所述反射件50的所述上表面51貫穿進入所述導光件40,其分別貫穿所述導光件40的上表面41和下表面42及所述反射件50的上表面51。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的上表面43。 Please refer to FIG. 16, which shows a schematic diagram of a second embodiment of the light emitting diode packaging structure 12 in the twelfth embodiment of the present invention. The package structure 12 of the light emitting diode provided in this embodiment is basically the same as the structure of the third embodiment. The light-emitting chip 20 includes an upper surface 21 that is in contact with the color conversion layer 30 and is opposite to the reflective surface 501 of the reflector 50. The color conversion layer 30 includes an upper surface 31 in contact with the light guide 40 and opposite to the upper surface 21 of the light-emitting chip 20. The upper surface 31 of the color conversion layer 30 faces away from the light-emitting chip 20 and is opposite to the reflective surface 501 of the reflector 50. The light guide 40 includes an upper surface 41 contacting the reflective member 50 and a lower surface 42 contacting the color conversion layer 30. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the light-emitting diode package structure 12 is provided with a groove 70 directly above the light-emitting chip 20. The width of the groove 70 is smaller than the width of the light-emitting chip 20. The upper surface 51 of the reflector 50 penetrates into the light guide 40, which penetrates the upper surface 41 and the lower surface 42 of the light guide 40 and the upper surface 51 of the reflector 50 respectively. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the upper surface 43 of the light guide 40.

可以理解的,所述溝槽70能夠自所述反射件50的上表面51貫穿至所述導光件40的上表面41與下表面42之間的一預設位置。 It can be understood that the groove 70 can penetrate from the upper surface 51 of the reflector 50 to a predetermined position between the upper surface 41 and the lower surface 42 of the light guide 40.

優選的,所述溝槽70自所述反射件50的上表面51貫穿至所述導光件40的上表面41與下表面42的中間位置。 Preferably, the groove 70 penetrates from the upper surface 51 of the reflector 50 to an intermediate position between the upper surface 41 and the lower surface 42 of the light guide 40.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

請參閱圖17,展示了本發明的第十三實施例中的發光二極體的封裝結構13的示意圖。本實施例提供的發光二極體的封裝結構13與第四實施例的結構基本一致。所述反射件50包括一遠離所述導光件40的上表面51和一接觸所述導光件40的下表面52。不同的是,所述反射件50于所述發光晶片20的正上方設有一溝槽70,所述溝槽70的寬度小於所述發光晶片20的寬度,所述溝槽70貫穿所述反射件50的上表面51和下表面52。具體地,所述溝槽70自所述反射件50的上表面51貫穿至所述反射件50的下表面52。 Please refer to FIG. 17, which shows a schematic diagram of a light-emitting diode packaging structure 13 in a thirteenth embodiment of the present invention. The package structure 13 of the light emitting diode provided in this embodiment is basically the same as the structure of the fourth embodiment. The reflecting member 50 includes an upper surface 51 away from the light guide 40 and a lower surface 52 contacting the light guide 40. The difference is that the reflector 50 is provided with a groove 70 directly above the light-emitting chip 20, the width of the groove 70 is smaller than the width of the light-emitting chip 20, and the groove 70 penetrates the reflector 50 of the upper surface 51 and the lower surface 52. Specifically, the groove 70 penetrates from the upper surface 51 of the reflector 50 to the lower surface 52 of the reflector 50.

可以理解的,在本實施例中,所述反射件50適用於第一實施例中的反射件50的第一實施方式至第四實施方式或其組合變化。所述反射件50的反射表面501為平面、凹面、凸面、抛物面、多線段面、曲面。所述反射件50的反射表面501為對稱面或非對稱面。所述溝槽70適用於第六實施例中的第一實施方式和第二實施方式或其組合變化。所述溝槽70為十字型凹槽或圓型凹槽,所述溝槽70的特徵在此不再贅述。 It can be understood that, in this embodiment, the reflector 50 is applicable to the first embodiment to the fourth embodiment of the reflector 50 in the first embodiment or a combination change thereof. The reflective surface 501 of the reflector 50 is a flat surface, a concave surface, a convex surface, a parabolic surface, a polyline segment surface, or a curved surface. The reflective surface 501 of the reflector 50 is a symmetrical surface or an asymmetrical surface. The groove 70 is applicable to the first embodiment and the second embodiment in the sixth embodiment or a combination change thereof. The groove 70 is a cross-shaped groove or a round groove, and the characteristics of the groove 70 will not be repeated here.

本發明提供一種發光二極體的封裝結構,通過所述導光件與所述反射件的組合結構而使所述發光晶片的光線照射範圍更廣。所述導光件包覆所述色轉換層與所述發光晶片的外側。所述發光晶片的光線通過所述色轉換層入射於所述導光件,所述光線受到所述導光件引導而照射於所述反射件,所述反射件將所述光線反射回所述導光件,此為第一次光線反射。所述導光件的材料性質將所述光線傳遞的更遠,且所述光線被反射的角度能夠更大。進一步的,所述發光二極體的封裝結構還可以設置在所述基板的反射表面上,經由所述反射件反射的光線會照射於所述基板的反射表面,此次為第二次光線反射,因此所述光線照射範圍相較于習知技術的發光二極體的直接出光或一次反射出光的照射範圍更廣。本發明還可通過改變反射件的結構改變光線照射範圍與光線路徑。 The present invention provides a light-emitting diode packaging structure, which enables the light-emitting chip to irradiate a wider range of light through the combined structure of the light guide and the reflector. The light guide member covers the outer side of the color conversion layer and the light-emitting chip. The light from the light-emitting chip is incident on the light guide through the color conversion layer, and the light is guided by the light guide to irradiate the reflective member, and the reflective member reflects the light back to the Light guide, this is the first light reflection. The material properties of the light guide can transmit the light farther, and the angle at which the light is reflected can be greater. Further, the packaging structure of the light-emitting diode can also be arranged on the reflective surface of the substrate, and the light reflected by the reflector will irradiate the reflective surface of the substrate. This is the second light reflection. Therefore, the light irradiation range is wider than that of the light emitting diode directly or once reflected by the conventional light emitting diode. The invention can also change the light irradiation range and light path by changing the structure of the reflector.

本發明還提供另一種發光二極體的封裝結構,其差異在於將所述導光件與所述反射件環設于所述發光晶片的周圍,如此所述發光晶片所發出的光線由所述反射件進行向所述封裝體的外側反射出光,或是可以通過改變反射件的結構改變光線照射範圍與光線路徑。 The present invention also provides another light-emitting diode package structure. The difference is that the light guide and the reflector are arranged around the light-emitting chip, so that the light emitted by the light-emitting chip is The reflector reflects light to the outside of the package, or the light irradiation range and light path can be changed by changing the structure of the reflector.

本發明還提供另一種發光二極體的封裝結構,其差異在於在所述反射件設溝槽或是在所述反射件和所述導光件設溝槽,以使所述發光晶片發出的光可以部分從所述溝槽照射至所述發光二極體的封裝體的外界,從而改善了當出光面全部為反射層時,所述發光晶片的正上方過暗的問題。 The present invention also provides another light-emitting diode package structure. The difference is that grooves are provided on the reflector or grooves are provided on the reflector and the light guide to make the light-emitting chip emit Light can be partially irradiated from the groove to the outside of the package of the light-emitting diode, thereby improving the problem that the light-emitting chip is too dark when the light-emitting surface is entirely a reflective layer.

如上面所顯示和描述的實施例僅為舉例。因此,許多這樣的細節既未示出也未描述。儘管在前面的描述中已經闡述了本發明的許多特徵和優點,連同本發明的結構和功能的細節,但是本發明僅是說明性的,並且可以在細節上進行改變,包括形狀和元件排列,在本公開的原理範圍內,並且包括通過在權利要求中使用的術語的廣義含義建立的全部範圍。因此,可以理解,上述實施例可以在權利要求書的範圍內進行修改。 The embodiments shown and described above are only examples. Therefore, many of these details are neither shown nor described. Although many features and advantages of the present invention have been described in the foregoing description, together with the details of the structure and function of the present invention, the present invention is only illustrative and can be changed in details, including shapes and element arrangements, It is within the scope of the principle of the present disclosure and includes the full range established by the broad meaning of the terms used in the claims. Therefore, it can be understood that the above-mentioned embodiments can be modified within the scope of the claims.

10‧‧‧封裝體 10‧‧‧Package body

20‧‧‧發光晶片 20‧‧‧Light-emitting chip

30‧‧‧色轉換層 30‧‧‧color conversion layer

40‧‧‧導光件 40‧‧‧Light guide

50‧‧‧反射件 50‧‧‧Reflector

Claims (16)

一種發光二極體的封裝結構,其包括:一發光晶片,包括一上表面;一色轉換層,所述色轉換層包覆所述發光晶片,其包括一與所述發光晶片的所述上表面接觸的下表面,以及一與所述發光晶片背離的上表面;一導光件,設置在所述發光晶片的上方,所述導光件接觸與所述色轉換層的所述上表面接觸;及一反射件,設置在所述導光件的上方,所述反射件包括一上表面及一下表面,所述下表面與所述導光件接觸,所述反射件的所述下表面界定一面向所述發光晶片的第一反射表面,所述第一反射表面為凹面、凸面、抛物面、多線段面或曲面,所述反射件於所述發光晶片的正上方設有一使得所述導光件露出的溝槽,所述溝槽的寬度小於所述發光晶片的寬度。 A light-emitting diode package structure, comprising: a light-emitting chip including an upper surface; a color conversion layer, the color conversion layer covering the light-emitting chip, which includes a light-emitting chip and the upper surface The lower surface in contact, and an upper surface away from the light-emitting chip; a light guide member disposed above the light-emitting chip, the light guide member being in contact with the upper surface of the color conversion layer; And a reflector, disposed above the light guide, the reflector includes an upper surface and a lower surface, the lower surface is in contact with the light guide, and the lower surface of the reflector defines a Facing the first reflective surface of the light-emitting chip, the first reflective surface is a concave surface, a convex surface, a parabolic surface, a polyline segment surface or a curved surface, and the reflective member is provided directly above the light-emitting chip such that the light guide member The width of the exposed groove is smaller than the width of the light-emitting chip. 如請求項1所述之發光二極體的封裝結構,其中,所述溝槽呈對稱分佈。 The package structure of the light emitting diode according to claim 1, wherein the grooves are distributed symmetrically. 如請求項1所述之發光二極體的封裝結構,其中,所述溝槽為十字型溝槽或圓型溝槽。 The light emitting diode package structure according to claim 1, wherein the groove is a cross-shaped groove or a round-shaped groove. 如請求項1所述之發光二極體的封裝結構,其中,所述溝槽的寬度範圍為0.05mm-0.3mm。 The light emitting diode package structure according to claim 1, wherein the width of the groove is in the range of 0.05mm-0.3mm. 如請求項1所述之發光二極體的封裝結構,其中,所述溝槽包括遠離所述導光件的一上端部和靠近所述導光件的一下端部,所述上端部的寬度大於或等於所述下端部的寬度。 The light-emitting diode package structure according to claim 1, wherein the groove includes an upper end far from the light guide and a lower end close to the light guide, and the width of the upper end It is greater than or equal to the width of the lower end. 如請求項1所述之發光二極體的封裝結構,其中,所述導光件包含矽氧樹脂和附加材料,所述附加材料為所述矽氧樹脂重量的5%~15%,所 述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 The light-emitting diode package structure of claim 1, wherein the light guide includes silicone resin and additional materials, and the additional material is 5% to 15% by weight of the silicone resin, so The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles. 如請求項6所述之發光二極體的封裝結構,其中,所述矽氧樹脂的折射率為1.4-1.6,所述附加材料的折射率為1.5-1.8。 The light emitting diode package structure according to claim 6, wherein the refractive index of the silicone resin is 1.4-1.6, and the refractive index of the additional material is 1.5-1.8. 如請求項6所述之發光二極體的封裝結構,其中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物,所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。 The light emitting diode package structure according to claim 6, wherein the organic diffusion particles include organic silicon-based compounds and acrylic compounds, and the inorganic diffusion particles include silicon dioxide or calcium carbonate-based compounds. 一種發光二極體的封裝結構,其包括:一發光晶片,包括一上表面;一色轉換層,所述色轉換層包覆所述發光晶片,其包括一與所述發光晶片的所述上表面,以及一與所述發光晶片背離的上表面;一導光件,設置在所述發光晶片的上方,所述導光件接觸與所述色轉換層的所述上表面接觸;及一反射件,設置在所述導光件的上方,所述反射件包括一上表面及一下表面,所述下表面接觸所述導光件,所述反射件的所述下表面界定一面向所述發光晶片的第一反射表面,所述第一反射表面為凹面、凸面、抛物面、多線段面或曲面,所述發光二極體的封裝結構於所述發光晶片的正上方設有一溝槽,所述溝槽的寬度小於所述發光晶片的寬度,所述溝槽自所述反射件的所述上表面貫穿進入所述導光件。 A light-emitting diode package structure, comprising: a light-emitting chip including an upper surface; a color conversion layer, the color conversion layer covering the light-emitting chip, which includes a light-emitting chip and the upper surface , And an upper surface away from the light-emitting chip; a light guide member disposed above the light-emitting chip, the light guide member being in contact with the upper surface of the color conversion layer; and a reflecting member , Arranged above the light guide member, the reflecting member includes an upper surface and a lower surface, the lower surface contacts the light guide member, and the lower surface of the reflecting member defines a surface facing the light emitting chip The first reflective surface is a concave, convex, parabolic, polyline or curved surface, and the package structure of the light-emitting diode is provided with a groove directly above the light-emitting chip. The width of the groove is smaller than the width of the light emitting chip, and the groove penetrates into the light guide member from the upper surface of the reflector. 如請求項9所述之發光二極體的封裝結構,其中,所述溝槽呈對稱分佈。 The light emitting diode package structure according to claim 9, wherein the grooves are symmetrically distributed. 如請求項9所述之發光二極體的封裝結構,其中,所述溝槽為十字型溝槽或圓型溝槽。 The light emitting diode package structure according to claim 9, wherein the groove is a cross-shaped groove or a circular groove. 如請求項9所述之發光二極體的封裝結構,其中,所述溝槽的寬度範圍為0.05mm-0.3mm。 The package structure of the light-emitting diode according to claim 9, wherein the width of the groove is in the range of 0.05 mm-0.3 mm. 如請求項9所述之發光二極體的封裝結構,其中,所述溝槽包括遠離所述色轉換層的一上端部和靠近所述色轉換層的一下端部,所述上端部的寬度大於或等於所述下端部的寬度。 The light emitting diode package structure according to claim 9, wherein the groove includes an upper end far from the color conversion layer and a lower end close to the color conversion layer, and the width of the upper end It is greater than or equal to the width of the lower end. 如請求項9所述之發光二極體的封裝結構,其中,所述導光件包含矽氧樹脂和附加材料,所述附加材料為所述矽氧樹脂重量的5%~15%,所述附加材料選自有機擴散粒子、無機擴散粒子中的一種或其組合。 The light-emitting diode package structure according to claim 9, wherein the light guide includes a silicone resin and an additional material, and the additional material is 5% to 15% by weight of the silicone resin. The additional material is selected from one or a combination of organic diffusion particles and inorganic diffusion particles. 如請求項14所述之發光二極體的封裝結構,其中,所述矽氧樹脂的折射率為1.4-1.6,所述附加材料的折射率為1.5-1.8。 The light emitting diode package structure according to claim 14, wherein the refractive index of the silicone resin is 1.4-1.6, and the refractive index of the additional material is 1.5-1.8. 如請求項14所述之發光二極體的封裝結構,其中,所述有機擴散粒子包括有機矽類化合物及丙烯酸類化合物,所述無機擴散粒子包括二氧化矽或碳酸鈣類化合物。The light emitting diode package structure according to claim 14, wherein the organic diffusion particles include organosilicon compounds and acrylic compounds, and the inorganic diffusion particles include silica or calcium carbonate compounds.
TW108137028A 2017-04-13 2017-04-13 Light emitting diode assembly structure TWI710147B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW108137028A TWI710147B (en) 2017-04-13 2017-04-13 Light emitting diode assembly structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108137028A TWI710147B (en) 2017-04-13 2017-04-13 Light emitting diode assembly structure

Publications (2)

Publication Number Publication Date
TW201947788A TW201947788A (en) 2019-12-16
TWI710147B true TWI710147B (en) 2020-11-11

Family

ID=69582812

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108137028A TWI710147B (en) 2017-04-13 2017-04-13 Light emitting diode assembly structure

Country Status (1)

Country Link
TW (1) TWI710147B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201432960A (en) * 2013-01-25 2014-08-16 Panasonic Corp Package for light emitting element and light emitting device using the package

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201432960A (en) * 2013-01-25 2014-08-16 Panasonic Corp Package for light emitting element and light emitting device using the package

Also Published As

Publication number Publication date
TW201947788A (en) 2019-12-16

Similar Documents

Publication Publication Date Title
CN110993774B (en) Package structure of light emitting diode
KR100874556B1 (en) LED Spotlight with Funnel Lens
US9182101B2 (en) Light flux controlling member and illuminating device
JP5868106B2 (en) Lighting device
JP2010500739A5 (en)
WO2013157243A1 (en) Luminous flux control member, light emitting apparatus, and illuminating apparatus
TWI535978B (en) Optical lens and lighting element using same
TWI537523B (en) Optical lens and lighting element using the same
WO2011089927A1 (en) White-light-emitting led lighting device, and optical lens
JP4970172B2 (en) lighting equipment
EP2764292B1 (en) Lighting module
US20140321118A1 (en) Lighting device
JP2012064558A (en) Light guide pole uniformly emitting light beam and led lamp applying this light guide pole
TW200918829A (en) Light output device
TWI418853B (en) Optical lens module and lighting apparatus thereof
TWI416030B (en) Light source for crystal lamp
TWI710147B (en) Light emitting diode assembly structure
TWI465671B (en) Led source device
JP2010040861A (en) Light-emitting device
TW201514423A (en) Side view backlight module
JP2015149133A (en) Luminaire
JP2014011415A (en) Light emitting device, lighting device, and display device
CN102537838B (en) Optical lens module and luminous device thereof
JP6688303B2 (en) Luminance pattern formation using back-emitting LED and reflective substrate
TWI631732B (en) Illuminating device