WO2014118838A1 - Ultraviolet light emitting device - Google Patents

Ultraviolet light emitting device Download PDF

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Publication number
WO2014118838A1
WO2014118838A1 PCT/JP2013/006808 JP2013006808W WO2014118838A1 WO 2014118838 A1 WO2014118838 A1 WO 2014118838A1 JP 2013006808 W JP2013006808 W JP 2013006808W WO 2014118838 A1 WO2014118838 A1 WO 2014118838A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
ultraviolet light
lens
emitting device
mounting substrate
Prior art date
Application number
PCT/JP2013/006808
Other languages
French (fr)
Japanese (ja)
Inventor
植田　充彦
友洋 中谷
孝典 明田
Original Assignee
パナソニック株式会社
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Filing date
Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Publication of WO2014118838A1 publication Critical patent/WO2014118838A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Definitions

  • the present invention relates to an ultraviolet light emitting device.
  • an ultraviolet light emitting element package 210 having the configuration shown in FIG. 3 is known (Japanese Patent Application Publication No. 2007-311707).
  • the ultraviolet light emitting element package 210 includes an ultraviolet light emitting diode element 211, a substrate 212, lead electrodes 213 and 214, a lens holding member 215, a condensing lens 217, and a refractive index difference relaxation layer 220.
  • the electrodes 211A and 211B of the ultraviolet light-emitting diode element 211 are electrically connected to the lead electrodes 213 and 214 by an electrical bonding member such as a gold bump or silver paste.
  • the lens holding member 215 has a frame shape with an L-shaped cross section.
  • the condenser lens 217 is bonded to the lens holding member 215 with an adhesive 216 applied on the lens holding surface.
  • the condenser lens 217 has a hemispherical shape and is formed of quartz glass.
  • As the adhesive 216 an epoxy resin or a resin containing a silyl group is used.
  • an ultraviolet light emitting device 310 having a configuration shown in FIG. 4 is known (Japanese Patent Application Publication No. 2009-177098).
  • the ultraviolet light emitting device 310 includes an ultraviolet light LED chip 311 and a package 320 that houses the ultraviolet light LED chip 311.
  • the package 320 includes a mounting substrate 322 and a translucent member 323.
  • the translucent member 323 is made of a translucent substrate made of glass.
  • the translucent member 323 is formed in the same outer peripheral rectangular plate shape as the mounting substrate 322.
  • the translucent member 323 is integrally formed with a concentric plano-convex lens 323a that condenses the light emitted from the ultraviolet LED chip 311 at the center.
  • the mounting substrate 322 is formed using three silicon substrates 322a, 322b, and 322c.
  • the adhesive 216 may be deteriorated by the ultraviolet light from the ultraviolet light emitting diode element 211.
  • the condenser lens 217 in the ultraviolet light emitting device package 210 is made of quartz glass, it is presumed that it is processed into a hemisphere by grinding.
  • the ultraviolet light emitting device 310 forms a wafer level package structure by performing a bonding process for bonding the mounting substrate 322 and the translucent member 323 at the wafer level at the time of manufacture, and then the mounting substrate 322 through a dicing process. Need to be divided into sizes. For this reason, the ultraviolet light emitting device 310 is desired to be further improved in reliability.
  • the present invention has been made in view of the above reasons, and an object of the present invention is to provide an ultraviolet light emitting device capable of improving the reliability and reducing the thickness of the lens.
  • the ultraviolet light emitting device of the present invention includes a mounting substrate, an ultraviolet light emitting element mounted on the first surface side of the mounting substrate, and the ultraviolet light element disposed on the first surface side of the mounting substrate away from the ultraviolet light emitting element.
  • the lens is an aspherical lens formed of glass having a yield point of 600 ° C. or lower. The lens and the lens support member are directly joined.
  • the lens support member has a cylindrical shape, and the lens and the lens support member are formed on the outer peripheral surface of the lens and the end of the lens support member on the side far from the mounting substrate. It is preferable that the peripheral surface is directly joined.
  • the lens support member preferably has a cylindrical shape as the cylindrical shape.
  • the ultraviolet light emitting device of the present invention can improve the reliability and reduce the thickness of the lens.
  • FIG. 1 is a schematic cross-sectional view of the ultraviolet light emitting device of the embodiment.
  • FIG. 2 is a schematic perspective view of the ultraviolet light emitting device of the embodiment.
  • FIG. 3 is a schematic cross-sectional view of a conventional ultraviolet light emitting device package.
  • FIG. 4 is a schematic cross-sectional view of another conventional ultraviolet light emitting device.
  • the ultraviolet light emitting device 10 of the present embodiment will be described with reference to FIGS. 1 and 2.
  • the ultraviolet light emitting device 10 includes a mounting substrate 2, an ultraviolet light emitting element 1, a lens 32, and a lens support member 31.
  • the mounting substrate 2, the lens 32, and the lens support member 31 constitute a package for housing the ultraviolet light emitting element 1.
  • the lens support member 31 and the lens 32 constitute the lid 3.
  • the ultraviolet light emitting element 1 is a solid light emitting element that emits ultraviolet light (ultraviolet light).
  • an ultraviolet LED chip is adopted, but not limited to this, an ultraviolet semiconductor laser chip can also be adopted.
  • the mounting substrate 2 is a substrate on which the ultraviolet light emitting element 1 is mounted. “Mounting” is a concept that includes arranging and mechanically connecting the ultraviolet light emitting elements 1 and electrically connecting them. For this reason, the mounting substrate 2 has a function of mechanically holding the ultraviolet light emitting element 1 and a function of forming a wiring for supplying power to the ultraviolet light emitting element 1.
  • the ultraviolet light emitting element 1 is mounted on the first surface 2 a side of the mounting substrate 2.
  • the mounting substrate 2 is configured so that a plurality of ultraviolet light emitting elements 1 can be mounted.
  • the number of the ultraviolet light emitting elements 1 that can be mounted on the mounting substrate 2 is not particularly limited.
  • the mounting substrate 2 may have only one ultraviolet light emitting element 1 that can be mounted.
  • the lens support member 31 has a function of supporting the lens 32.
  • the lens support member 31 is made of metal.
  • the lens support member 31 is fixed to the mounting substrate 2.
  • the lens support member 31 is preferably fixed to the mounting substrate 2 by bonding to the mounting substrate 2.
  • the lens 32 has a function of controlling the light distribution of ultraviolet rays emitted from the ultraviolet light emitting element 1.
  • the lens 32 is arranged away from the ultraviolet light emitting element 1 on the first surface 2 a side of the mounting substrate 2.
  • the lens 32 is arranged away from the mounting substrate 2 and the ultraviolet light emitting element 1 in the thickness direction of the mounting substrate 2.
  • the lens 32 is an aspherical lens formed of glass having a yield point of 600 ° C. or less. Thereby, the ultraviolet light emitting device 10 can reduce the thickness of the lens 32.
  • the lens 32 and the lens support member 31 are directly joined. Thereby, the ultraviolet light emitting device 10 can improve the reliability.
  • Direct bonding means bonding without using an adhesive or the like.
  • the lens 32 is welded to the lens support member 31. Thereby, the lens 32 and the lens support member 31 are directly joined. In short, the lens 32 is directly joined to the lens support member 31 only by welding to the lens support member 31.
  • an ultraviolet LED chip that emits ultraviolet light can be employed.
  • the ultraviolet LED chip is, for example, an LED chip that employs an AlGaN-based material as the material of the light emitting layer and has an emission wavelength in the ultraviolet wavelength region of 210 nm to 360 nm.
  • the emission wavelength means the emission peak wavelength.
  • the ultraviolet LED chip has, for example, a configuration in which an AlN layer, an n-type nitride semiconductor layer, a light emitting layer, an electron block layer, a p-type nitride semiconductor layer, and a p-type contact layer are stacked on one surface side of a sapphire substrate.
  • LED chip can be adopted.
  • the LED chip includes a first electrode electrically connected to the n-type nitride semiconductor layer, and a second electrode electrically connected to the p-type nitride semiconductor layer via the p-type contact layer.
  • the n-type nitride semiconductor layer can be constituted by, for example, an n-type Al x Ga 1-x N (0 ⁇ x ⁇ 1) layer.
  • the light emitting layer has a quantum well structure made of an AlGaN-based material.
  • the quantum well structure is composed of a barrier layer and a well layer.
  • the quantum well structure may be a multiple quantum well structure or a single quantum well structure.
  • the Al composition ratio of the well layer is set so as to emit ultraviolet light having a desired emission wavelength.
  • the light emission wavelength can be set to an arbitrary light emission wavelength in the range of 210 to 360 nm by changing the Al composition ratio. For example, when the desired emission wavelength is around 265 nm, the Al composition ratio may be set to 0.50.
  • the ultraviolet LED chip may have a light emitting layer having a single layer structure, and a double hetero structure may be formed by the light emitting layer and the layers on both sides in the thickness direction of the light emitting layer.
  • a double hetero structure may be formed by the light emitting layer and the layers on both sides in the thickness direction of the light emitting layer.
  • one of the layers on both sides in the thickness direction of the light emitting layer can be an n-type nitride semiconductor layer and the other can be a p-type nitride semiconductor layer.
  • the structure of the ultraviolet LED chip is not particularly limited.
  • the ultraviolet LED chip has a chip size of 0.39 mm ⁇ (0.39 mm ⁇ 0.39 mm).
  • the chip size of the ultraviolet LED chip is not particularly limited.
  • the chip size of the ultraviolet LED chip may be, for example, 0.3 mm ⁇ (0.3 mm ⁇ 0.3 mm), 0.45 mm ⁇ (0.45 mm ⁇ 0.45 mm), 1 mm ⁇ (1 mm ⁇ 1 mm), or the like.
  • the outer peripheral shape of the ultraviolet LED chip is not limited to a square shape, and may be, for example, a rectangular shape or a regular hexagonal shape.
  • the thickness of the ultraviolet LED chip is about 0.16 mm, the thickness is not particularly limited.
  • the ultraviolet light emitting element 1 has a first electrode and a second electrode arranged on one surface side in the thickness direction of the ultraviolet light emitting element 1.
  • the ultraviolet light emitting element 1 causes the first electrode and the second electrode to be electrically conductive bumps 7a on the conductor layer (not shown) formed in the first predetermined pattern on the mounting substrate 2, respectively. 7b can be electrically connected.
  • This conductor layer (hereinafter referred to as “first conductor layer”) has a spatial relationship between the first conductor portion to which the first electrode of the ultraviolet light emitting element 1 is connected and the second conductor portion to which the second electrode is connected. So that they are separated and electrically insulated.
  • the ultraviolet light emitting device 10 may use, as the ultraviolet light emitting element 1, an ultraviolet LED chip in which the first electrode and the second electrode are arranged on one surface side in the thickness direction and take out light from the one surface side.
  • the ultraviolet light emitting device 10 electrically connects the first electrode of the ultraviolet light emitting element 1 and the first conductor part via the first wire, and connects the second electrode and the second conductor part to the second wire. You may make it electrically connect via.
  • the first wire and the second wire for example, an Au wire, an Al wire, an Al—Si wire, a Cu wire, or the like can be adopted.
  • the ultraviolet light emitting element 1 is not limited to the ultraviolet LED chip in which the first electrode and the second electrode are provided on one surface side in the thickness direction.
  • the ultraviolet light emitting element 1 may be, for example, an ultraviolet LED chip in which a first electrode is provided on one surface side in the thickness direction and a second electrode is provided on the other surface side.
  • Such an ultraviolet light emitting element 1 is formed by die-bonding one of the first electrode and the second electrode to the first conductor layer of the mounting substrate 2 through a conductive bonding material, What is necessary is just to make it electrically connect to a 1st conductor layer via a 3rd wire.
  • the conductive bonding material for example, solder, conductive paste, or the like can be employed.
  • the conductive paste for example, a silver paste, a gold paste, a copper paste, or the like can be employed.
  • the third wire for example, an Au wire, an Al wire, an Al—Si wire, a Cu wire, or the like can be used.
  • the outer peripheral shape of the mounting substrate 2 is circular.
  • the outer peripheral shape of the mounting substrate 2 is not limited to a circular shape, and may be, for example, a rectangular shape or a polygonal shape other than a rectangular shape.
  • the mounting board 2 includes a base 21 and two lead terminals 25.
  • the base 21 includes a metal plate, an electric insulation layer (not shown) formed on the first surface side of the metal plate, and a first conductor layer formed on the electric insulation layer.
  • the base 21 has a flange 21b that protrudes outward from the outer peripheral portion of the metal plate.
  • the thickness of the flange 21b is preferably set thinner than the thickness of the central portion of the metal plate. In this case, it is preferable that the flange 21b protrudes outward from a portion of the outer peripheral portion of the metal plate that is away from the first surface of the metal plate. In short, it is preferable that the flange 21b is in a position that is retracted from the first surface of the metal plate in the direction along the thickness direction of the metal plate.
  • the first conductor layer is configured such that a plurality of ultraviolet light emitting elements 1 can be connected in series.
  • the first conductor layer is not limited to this, and a plurality of ultraviolet light emitting elements 1 may be configured to be connected in parallel, or may be configured to be connected in series and parallel.
  • the ultraviolet light emitting device 10 may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in series, or may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in parallel.
  • a plurality of ultraviolet light emitting elements 1 may be connected in series and parallel.
  • the outer peripheral shape of the base 21 is circular.
  • the outer peripheral shape of the base 21 is not limited to a circular shape, and may be, for example, a rectangular shape or a polygonal shape other than a rectangular shape.
  • the material of the metal plate a metal having high thermal conductivity is preferable. For this reason, copper can be adopted as the material of the metal plate.
  • the material of the metal plate is not limited to copper, and for example, aluminum, aluminum alloy, silver, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, iron, Kovar, or the like can be employed.
  • the metal plate may be provided with a surface treatment layer (not shown) on the surface of a base material made of the above-described material.
  • the surface treatment layer examples include an Au film, an Al film, an Ag film, a laminated film of an Ni film, a Pd film, and an Au film, a laminated film of an Ni film, an Au film, an Ag film, a Pd film, and an AuAg alloy film.
  • a laminated film or the like can be employed.
  • the surface treatment layer is preferably composed of a plating layer or the like. In short, the surface treatment layer is preferably formed by a plating method.
  • the material of the first conductor layer for example, copper, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, aluminum, aluminum alloy, or the like can be employed.
  • the first conductor layer can be formed using, for example, a metal foil, a metal film, or the like.
  • the first conductor layer preferably has, for example, a laminated structure of a Cu layer, a Ni layer, and an Au layer, and the outermost surface side is preferably an Au layer.
  • the first conductor layer may have a laminated structure or a single layer structure.
  • the base 21 may include a protective layer that covers a portion of the electrical insulating layer where the first conductor layer is not formed and the first conductor layer.
  • a white resist layer can be used.
  • a material for the resist layer for example, a white resist can be employed.
  • the white resist is, for example, a resin containing a white pigment.
  • the white pigment include barium sulfate (BaSO 4 ) and titanium dioxide (TiO 2 ).
  • the resin include a silicone resin.
  • ASA COLOR (registered trademark) RESIST INK which is a white resist material made of silicone manufactured by Asahi Rubber Co., Ltd., can be used.
  • the white resist layer can be formed by, for example, a coating method.
  • the protective layer is a white resist layer
  • the light incident on the mounting substrate 2 from the ultraviolet light emitting element 1 is easily reflected on the surface of the protective layer.
  • the ultraviolet light emitting device 10 can suppress the light emitted from the ultraviolet light emitting element 1 from being absorbed by the mounting substrate 2. Therefore, the ultraviolet light emitting device 10 can improve the light output by improving the light extraction efficiency to the outside.
  • the ultraviolet light emitting device 10 may have a configuration in which the ultraviolet light emitting element 1 is mounted on a metal plate via a plate-shaped submount member (not shown) formed of a material having a higher thermal conductivity than the electrical insulating layer. Good. Thereby, in the ultraviolet light emitting device 10, the heat generated in the ultraviolet light emitting element 1 is transferred to the submount member and the metal plate without passing through the electrical insulating layer as a heat transfer path of the heat generated in the ultraviolet light emitting element 1. A heat transfer path is formed. Therefore, the ultraviolet light emitting device 10 can improve heat dissipation.
  • the planar size of the submount member is preferably set to a size that allows a plurality of ultraviolet light emitting elements 1 to be disposed. In this case, the planar size of the submount member is preferably set larger than the combined size of the plurality of ultraviolet light emitting elements 1.
  • a material of the submount member a material having a thermal conductivity higher than that of the electrical insulating layer and having a linear expansion coefficient between the linear expansion coefficient of the metal plate and the linear expansion coefficient of the ultraviolet light emitting element 1 is used. preferable.
  • the ultraviolet light emitting device 10 can suppress the occurrence of cracks due to thermal stress at the joint between the ultraviolet light emitting element 1 and the submount member (hereinafter referred to as “first joint”). It becomes possible.
  • the submount member is provided with a conductor layer (hereinafter referred to as “second conductor layer”) formed in a second predetermined pattern so that a plurality of ultraviolet light emitting elements 1 can be connected in series, for example. That's fine.
  • the first conductor layer may be formed in a third predetermined pattern so that power can be supplied to the series circuit formed on the submount member.
  • the second conductor layer may be configured so that a plurality of ultraviolet light emitting elements 1 can be connected in parallel, or may be configured so that series-parallel connection is possible.
  • the ultraviolet light emitting device 10 may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in series on a submount member, or a plurality of ultraviolet light emitting elements 1 are connected in parallel on a submount member. Alternatively, a plurality of ultraviolet light emitting elements 1 may be connected in series and parallel on the submount member.
  • the submount member may be joined to the metal plate via a joint (hereinafter referred to as “second joint”).
  • a joint for example, lead-free solder such as AuSn or SnAgCu is preferable.
  • the ultraviolet light emitting device 10 employs AuSn as the material of the second bonding portion, it is necessary to perform a pretreatment in which a metal layer made of Au or Ag is previously formed on the bonding surface of the first surface of the metal plate at the time of manufacture.
  • the second joint portion may be formed from a conductive paste.
  • the conductive paste for example, a silver paste, a gold paste, a copper paste, or the like can be employed.
  • the material of the second conductor layer for example, Au, Ag or the like can be adopted.
  • the material of the second conductor layer is the same as the material of the bumps 7a and 7b. Is preferred.
  • the material of the second conductor layer is preferably Au.
  • the second conductor layer is not limited to a single layer structure, and may be a multilayer structure. When the second conductor layer has a multilayer structure, the outermost layer is preferably formed of the same material as that of the bumps 7a and 7b.
  • the material of the submount member is not limited to AlN, and for example, Si, CuW, composite SiC, or the like may be employed.
  • the ultraviolet light emitting device 10 employs non-insulator Si, CuW, or the like as the material of the submount member, an insulating film is provided on the surface of the base material made of Si, CuW, etc., and the second conductor layer is formed on the insulating film. What is necessary is just to set it as the formed structure.
  • the ultraviolet light emitting device 10 is an ultraviolet LED chip having the first electrode on one surface side in the thickness direction and the second electrode on the other surface side
  • the ultraviolet light emitting device 1 and the submount member are, for example, soldered. Bonding can be performed using a conductive paste or the like. Examples of solder include SnPb, AuSn, SnAgCu, and the like. Examples of the conductive paste include silver paste.
  • the ultraviolet light emitting element 1 and the second conductor layer of the submount member are preferably joined by lead-free solder such as AuSn or SnAgCu.
  • the second conductor layer is preferably composed of a metal layer such as an Au layer or an Ag layer.
  • the second conductor layer can be formed using, for example, an evaporation method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
  • the submount member includes the ultraviolet light emitting element 1 and a metal plate. It has a function to relieve stress acting on the ultraviolet light emitting element 1 due to the difference in linear expansion coefficient.
  • the submount member has not only a function of relieving stress, but also a heat conduction function of transferring heat generated in the ultraviolet light emitting element 1 to a range wider than the chip size of the ultraviolet light emitting element 1 on the metal plate. Therefore, the ultraviolet light emitting device 10 can efficiently dissipate the heat generated in the ultraviolet light emitting element 1 through the submount member and the metal plate.
  • the lead terminal 25 is formed in a pin shape and penetrates in the thickness direction of the base 21.
  • the base 21 has a through hole through which the lead terminal 25 passes.
  • a sealing portion (not shown) made of an electrically insulating material (for example, glass) is provided between the lead terminal 25 and the inner peripheral surface of the through hole.
  • the two lead terminals 25 are terminals for power feeding from the outside.
  • Each lead terminal 25 is electrically connected to the first conductor layer on the first surface 21 a side of the base 21 via a wire (not shown) (hereinafter referred to as “fourth wire”).
  • a wire not shown
  • an Au wire can be adopted as the fourth wire.
  • the fourth wire is not limited to the Au wire but may be an Al wire.
  • the Au wire for example, a thin wire having a wire diameter of about 18 ⁇ m to 25 ⁇ m can be used.
  • the Al wire for example, a thin wire having a wire diameter of 25 ⁇ m to 200 ⁇ m can be adopted.
  • a larger current can be passed than when an Au wire is used.
  • the fourth wire is not limited to Au wire or Al wire, but may be Al—Si wire, Cu wire, or the like.
  • the mounting substrate 2 is not limited to the one in which the power supply terminal is configured by the pin-shaped lead terminal 25.
  • the mounting substrate 2 is a conductor layer (hereinafter referred to as “third conductor layer”) for surface mounting the ultraviolet light emitting device 10 on a printed circuit board or the like on the second surface side opposite to the first surface side of the metal plate.
  • the structure provided as a terminal for electric power feeding may be sufficient.
  • the mounting substrate 2 may be configured to include an insulating layer made of an electrically insulating material between the third conductor layer and the metal plate.
  • the mounting substrate 2 has a region exposed outside the lens support member 31 on the first surface 21a side of the base 21, and a part of the first conductor layer is provided as a power supply terminal in the region. Other configurations may be used.
  • the lens support member 31 is disposed on the first surface 2 a side of the mounting substrate 2 so as to surround the mounting region of the ultraviolet light emitting element 1 on the mounting substrate 2.
  • a region surrounded by the inner peripheral line of the lens support member 31 in a plan view constitutes a mounting region. That is, the mounting area is defined by the lens support member 31.
  • the lens support member 31 is formed in a cylindrical shape. More specifically, the lens support member 31 is formed in a cylindrical shape.
  • the lens support member 31 has a flange 31 b that protrudes outward from an end portion (hereinafter referred to as “first end portion”) 31 a on the side close to the mounting substrate 2.
  • the lens support member 31 has a flange 31 b joined to the flange 21 b of the mounting substrate 2 so as to overlap. In short, in the ultraviolet light emitting device 10, the flange 31b of the lens support member 31 and the flange 21b of the mounting substrate 2 are joined.
  • the inner diameter of the lens support member 31 is set to 3 mm, but is not limited to this value.
  • the lens support member 31 is not limited to a cylindrical shape, and may be a cylindrical shape, for example, a rectangular tube shape.
  • the outer peripheral shape of the flange 31b is circular.
  • the outer peripheral shape of the flange 31b is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
  • Stainless steel is used as the metal that is the material of the lens support member 31.
  • the ultraviolet light emitting device 10 can suppress deterioration of the lens support member 31 with time due to ultraviolet rays from the ultraviolet light emitting element 1.
  • the lens support member 31 can be made of stainless steel to improve heat dissipation, productivity, corrosion resistance, and the like.
  • the lens support member 31 may be formed, for example, by subjecting a stainless steel plate to processing such as press processing or machining.
  • As the stainless steel for example, Fe—Cr—Ni alloy steel (austenitic stainless steel) or the like can be employed.
  • As an austenitic stainless steel, SUS304 etc. are employable, for example.
  • the metal that is the material of the lens support member 31 is not limited to stainless steel, and for example, Kovar can be used.
  • Kovar is an alloy containing iron and nickel.
  • An example of the component ratio of Kovar is, by weight, iron: 53.5% by weight, nickel: 29% by weight, cobalt: 17% by weight, silicon: 0.2% by weight, manganese: 0.3% by weight. .
  • the component ratio of Kovar is not particularly limited.
  • the ultraviolet light emitting device 10 employs a configuration in which an oxide film is formed as a lens support member 31 by, for example, oxidizing the surface of a mother body made of Kovar. May be.
  • the lens 32 is a biconvex aspherical lens.
  • the lens 32 has a first lens surface 32aa located on the ultraviolet light emitting element 1 side and a second lens surface 32ab located on the opposite side to the ultraviolet light emitting element 1 side.
  • the first lens surface 32aa is an aspheric first convex curved surface.
  • the second lens surface 32ab is an aspherical second convex curved surface. The curvatures of the first convex curved surface and the second convex curved surface change continuously.
  • the first lens surface 32aa and the second lens surface 32ab may have the same shape or different shapes.
  • the aspheric lens constituting the lens 32 is not limited to a biconvex aspheric lens, and may be a plano-convex aspheric lens or a plano-concave aspheric lens, for example.
  • quartz glass is generally used as a lens material used for controlling the light distribution of ultraviolet rays.
  • the yield point of quartz glass is 1280 ° C.
  • a molding die such as a mold.
  • the mold must be provided with a release film having releasability in order to prevent sticking to the glass, but the yield point of quartz glass exceeds the heat resistance temperature of the release film.
  • the condenser lens 217 in the ultraviolet light emitting element package 210 shown in FIG. 3 is made of quartz glass, it is presumed that it is processed into a hemisphere by grinding.
  • the inventors of the present application have considered using glass having a yield point of 600 ° C. or less as the material of the lens 32 in consideration of the heat resistance of the release film.
  • glass having a yield point of 600 ° C. or less is adopted as the material of the lens 32.
  • the ultraviolet light emitting device 10 can make the lens 32 an aspherical lens formed by molding. Therefore, the ultraviolet light emitting device 10 can reduce the thickness of the lens 32 and improve the light extraction efficiency as compared with the case where the lens 32 is a hemispherical lens. It becomes possible to plan. Further, when the ultraviolet light emitting device 10 is manufactured, the lens 32 can be formed by molding, so that the productivity of the lens 32 can be improved as compared with the case where it is formed by grinding.
  • the glass that is the material of the lens 32 preferably has a transmittance of 70% or more, more preferably 80% or more, for the ultraviolet rays emitted from the ultraviolet light emitting element 1.
  • the glass used as the material of the lens 32 is borosilicate that satisfies the condition that the yield point is 600 ° C. or less and the transmittance for ultraviolet rays in the deep ultraviolet wavelength region (for example, ultraviolet rays having a wavelength of 265 nm) is 80%. Glass is used.
  • this type of borosilicate glass for example, 8337B manufactured by SCHOTT can be used.
  • the ultraviolet light emitting device 10 can make the transmittance of the lens 32 with respect to the ultraviolet rays emitted from the ultraviolet light emitting element 1 80% or more.
  • the ultraviolet light emitting element 1 emits light in the ultraviolet wavelength region of 210 nm to 280 nm. It is preferable to have. That is, it is preferable that the ultraviolet light emitting element 1 has an emission wavelength in the UV-C wavelength region.
  • the wavelength range of UV-C is, for example, 100 nm to 280 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination (CIE).
  • the linear expansion coefficient of the metal that is the material of the lens support member 31 is preferably larger than the linear expansion coefficient of the borosilicate glass that is the material of the lens 32.
  • the difference in linear expansion coefficient between the borosilicate glass and the metal is small.
  • the lens 32 and the lens support member 31 are directly bonded as described above.
  • the lens 32 and the lens support member 31 include an outer peripheral surface of the lens 32 and an inner peripheral surface of an end portion (hereinafter referred to as a “second end portion”) 31 c far from the mounting substrate 2 in the lens support member 31. Direct bonding is preferred.
  • the ultraviolet light emitting device 10 is more glassy than the case where the flat portion formed integrally with the condenser lens 323a is provided like the translucent member 323 in the ultraviolet light emitting device 310 shown in FIG. It becomes possible to reduce the usage-amount of.
  • the ultraviolet light emitting device 10 By joining to the lens support member 31, the lens 32 can be tightened by the lens support member 31.
  • the lens support member 31 is preferably in a cylindrical shape, but more preferably in a cylindrical shape rather than a rectangular tube shape. This is because the lens support member 31 is cylindrical, so that the stress applied from the lens support member 31 to the lens 32 during molding of the lens 32 can be made uniform, and the quality of the lens 32 can be stabilized. This is because it becomes possible.
  • the inner peripheral shape of the lens support member 31 is a regular polygonal shape, a regular polygonal shape that is closer to a circle is more preferable in terms of stability of the quality of the lens 32.
  • the lid 3 composed of the lens support member 31 and the lens 32 is joined to the mounting substrate 2.
  • the lid 3 covers the plurality of ultraviolet light emitting elements 1 on the first surface 2 a side of the mounting substrate 2.
  • the lower mold, the upper mold, the lens material from which the lens 32 is based, and the outer frame are arranged.
  • the lower mold is a mold that is fitted into the lens support member 31 from the first end 31 a side of the lens support member 31.
  • the upper mold is a mold that faces the lower mold on the second end portion 31 c side of the lens support member 31.
  • the outer frame is a cylindrical frame into which the upper mold and the lens support member 31 are fitted.
  • the lower mold, the upper mold, and the outer frame are collectively referred to as a mold.
  • the upper surface of the lower mold constitutes a first molding surface corresponding to the shape of the first lens surface 32aa of the lens 32.
  • the lower surface forms a second molding surface corresponding to the shape of the second lens surface 32ab of the lens 32.
  • the first molding surface and the second molding surface preferably have mirror properties. “Having specularity” means, for example, that the arithmetic average roughness Ra defined by JIS B 0601-2001 and ISO 4287-1997 is 100 nm or less.
  • the material of the lens material is the above-described borosilicate glass.
  • the shape of the lens material is spherical.
  • the lens material is not limited to a spherical shape, and may be a plate shape such as a disk shape.
  • the outer frame has a cylindrical shape.
  • the outer frame has a function of aligning the center axis of the lower mold and the center axis of the upper mold in a straight line.
  • the outer frame has a function of holding the lens support member 31, the lower mold, and the upper mold.
  • the lower mold, the upper mold, and the outer frame for example, those formed from silicon nitride, silicon carbide, graphite, or the like can be used.
  • a release film is provided on the lower mold and the upper mold.
  • the lens material is heated from the outside of the outer frame to be softened and then cooled to form the lens 32 and the lens 32 and the lens support member 31 are welded together.
  • the lid 3 is removed from the lower mold, the upper mold and the outer frame. In short, in the third step, release is performed.
  • the method for manufacturing the lid 3 described above is an example and is not particularly limited.
  • the ultraviolet light emitting device 10 of the present embodiment is separated from the ultraviolet light emitting element 1 on the mounting substrate 2, the ultraviolet light emitting element 1 mounted on the first surface 2 a side of the mounting substrate 2, and the first surface 2 a side of the mounting substrate 2. And a lens 32 that controls the distribution of ultraviolet rays emitted from the ultraviolet light emitting element 1 and a metal lens support member 31 that is fixed to the mounting substrate 2 and supports the lens 32. Further, in the ultraviolet light emitting device 10, the lens 32 is an aspherical lens formed of glass having a yield point of 600 ° C. or less, and the lens 32 and the metal lens support member 31 are directly bonded. As a result, the ultraviolet light emitting device 10 can reduce the thickness of the lens and improve the reliability.
  • the lens 32 and the metal lens support member 31 are directly joined without using an adhesive, it is possible to improve the reliability. Further, since the ultraviolet light emitting device 10 does not need to be provided with a flange on the lens 32, the lens 32 can be reduced in size, and the cost can be reduced by reducing the amount of glass used.

Abstract

An ultraviolet light emitting device includes: a mounting substrate; an ultraviolet light emitting element mounted on a first surface side of the mounting substrate; a lens that is arranged on the first surface side of the mounting substrate, apart from the ultraviolet light emitting element, and controls light distribution of ultraviolet light emitted from the ultraviolet light emitting element; and a metal-made lens supporting member that is fixed on the mounting substrate and supports the lens. The lens is an aspherical lens made of glass having a yield point of 600°C or lower. The lens and the lens supporting member are directly bonded.

Description

紫外線発光装置UV light emitting device
　本発明は、紫外線発光装置に関するものである。 The present invention relates to an ultraviolet light emitting device.
　紫外線発光装置としては、図３に示す構成を有する紫外線発光素子パッケージ２１０が知られている（日本国特許出願公開番号２００７－３１１７０７）。 As an ultraviolet light emitting device, an ultraviolet light emitting element package 210 having the configuration shown in FIG. 3 is known (Japanese Patent Application Publication No. 2007-311707).
　紫外線発光素子パッケージ２１０は、紫外線発光ダイオード素子２１１と、基板２１２と、リード電極２１３、２１４と、レンズ保持部材２１５と、集光レンズ２１７と、屈折率差緩和層２２０と、を備えている。 The ultraviolet light emitting element package 210 includes an ultraviolet light emitting diode element 211, a substrate 212, lead electrodes 213 and 214, a lens holding member 215, a condensing lens 217, and a refractive index difference relaxation layer 220.
　紫外線発光ダイオード素子２１１の電極２１１Ａ、２１１Ｂは、金のバンプや銀ペースト等の電気的接合部材により、リード電極２１３、２１４に電気的に接続されている。 The electrodes 211A and 211B of the ultraviolet light-emitting diode element 211 are electrically connected to the lead electrodes 213 and 214 by an electrical bonding member such as a gold bump or silver paste.
　レンズ保持部材２１５は、断面形状がＬ字型の枠状のものである。レンズ保持部材２１５は、レンズ保持面上に塗布された接着剤２１６によって集光レンズ２１７が接着されている。集光レンズ２１７は、半球状であって、石英ガラスにより形成されている。接着剤２１６としては、エポキシ系の樹脂や、シリル基を含有する樹脂が用いられている。 The lens holding member 215 has a frame shape with an L-shaped cross section. The condenser lens 217 is bonded to the lens holding member 215 with an adhesive 216 applied on the lens holding surface. The condenser lens 217 has a hemispherical shape and is formed of quartz glass. As the adhesive 216, an epoxy resin or a resin containing a silyl group is used.
　また、紫外線発光装置としては、図４に示す構成を有する紫外線発光装置３１０が知られている（日本国特許出願公開番号２００９－１７７０９８）。 Further, as an ultraviolet light emitting device, an ultraviolet light emitting device 310 having a configuration shown in FIG. 4 is known (Japanese Patent Application Publication No. 2009-177098).
　紫外線発光装置３１０は、紫外光ＬＥＤチップ３１１と、紫外光ＬＥＤチップ３１１を収納するパッケージ３２０と、を備えている。 The ultraviolet light emitting device 310 includes an ultraviolet light LED chip 311 and a package 320 that houses the ultraviolet light LED chip 311.
　パッケージ３２０は、実装基板３２２と、透光性部材３２３と、で構成されている。透光性部材３２３は、ガラスにより形成された透光性基板からなる。透光性部材３２３は、実装基板３２２と同じ外周形状の矩形板状に形成されている。透光性部材３２３は、中央部に、紫外光ＬＥＤチップ３１１から放射された光を集光する平凸レンズ状の集光レンズ３２３ａが連続一体に形成されている。実装基板３２２は、３枚のシリコン基板３２２ａ、３２２ｂ、３２２ｃを用いて形成されている。 The package 320 includes a mounting substrate 322 and a translucent member 323. The translucent member 323 is made of a translucent substrate made of glass. The translucent member 323 is formed in the same outer peripheral rectangular plate shape as the mounting substrate 322. The translucent member 323 is integrally formed with a concentric plano-convex lens 323a that condenses the light emitted from the ultraviolet LED chip 311 at the center. The mounting substrate 322 is formed using three silicon substrates 322a, 322b, and 322c.
　紫外線発光素子パッケージ２１０では、紫外線発光ダイオード素子２１１の側面からも紫外線が放射される場合、紫外線発光ダイオード素子２１１からの紫外線により接着剤２１６が劣化することが考えられる。 In the ultraviolet light emitting element package 210, when the ultraviolet light is also emitted from the side surface of the ultraviolet light emitting diode element 211, the adhesive 216 may be deteriorated by the ultraviolet light from the ultraviolet light emitting diode element 211.
　上述の紫外線発光素子パッケージ２１０における集光レンズ２１７は、石英ガラスからなるので、研削加工により半球状に加工されていると推考される。 Since the condenser lens 217 in the ultraviolet light emitting device package 210 is made of quartz glass, it is presumed that it is processed into a hemisphere by grinding.
　また、紫外線発光装置３１０は、製造時に、実装基板３２２と透光性部材３２３とを接合する接合工程をウェハレベルで行うことでウェハレベルパッケージ構造体を形成してから、ダイシング工程により実装基板３２２のサイズに分割する必要がある。このため、紫外線発光装置３１０は、信頼性のより一層の向上が望まれている。 In addition, the ultraviolet light emitting device 310 forms a wafer level package structure by performing a bonding process for bonding the mounting substrate 322 and the translucent member 323 at the wafer level at the time of manufacture, and then the mounting substrate 322 through a dicing process. Need to be divided into sizes. For this reason, the ultraviolet light emitting device 310 is desired to be further improved in reliability.
　本発明は上記事由に鑑みて為されたものであり、その目的は、信頼性の向上を図ることが可能で且つレンズの薄型化を図ることが可能な紫外線発光装置を提供することにある。 The present invention has been made in view of the above reasons, and an object of the present invention is to provide an ultraviolet light emitting device capable of improving the reliability and reducing the thickness of the lens.
　本発明の紫外線発光装置は、実装基板と、前記実装基板の第１面側に実装された紫外線発光素子と、前記実装基板の前記第１面側で前記紫外線発光素子から離れて配置され前記紫外線発光素子から放射される紫外線の配光を制御するレンズと、前記実装基板に固定され前記レンズを支持する金属製のレンズ支持部材と、を備える。前記レンズは、屈伏点が６００℃以下のガラスにより形成された非球面レンズである。前記レンズと前記レンズ支持部材とは、直接接合されている。 The ultraviolet light emitting device of the present invention includes a mounting substrate, an ultraviolet light emitting element mounted on the first surface side of the mounting substrate, and the ultraviolet light element disposed on the first surface side of the mounting substrate away from the ultraviolet light emitting element. A lens that controls light distribution of ultraviolet rays emitted from the light emitting element; and a metal lens support member that is fixed to the mounting substrate and supports the lens. The lens is an aspherical lens formed of glass having a yield point of 600 ° C. or lower. The lens and the lens support member are directly joined.
　この紫外線発光装置において、前記レンズ支持部材が筒状の形状であり、前記レンズと前記レンズ支持部材とは、前記レンズの外周面と前記レンズ支持部材における前記実装基板から遠い側の端部の内周面とが、直接接合されているのが好ましい。 In the ultraviolet light emitting device, the lens support member has a cylindrical shape, and the lens and the lens support member are formed on the outer peripheral surface of the lens and the end of the lens support member on the side far from the mounting substrate. It is preferable that the peripheral surface is directly joined.
　この紫外線発光装置において、前記レンズ支持部材は、前記筒状の形状が円筒状の形状であるのが好ましい。 In this ultraviolet light emitting device, the lens support member preferably has a cylindrical shape as the cylindrical shape.
　本発明の紫外線発光装置は、信頼性の向上を図ることが可能で且つレンズの薄型化を図ることが可能となる。 The ultraviolet light emitting device of the present invention can improve the reliability and reduce the thickness of the lens.
図１は、実施形態の紫外線発光装置の概略断面図である。FIG. 1 is a schematic cross-sectional view of the ultraviolet light emitting device of the embodiment. 図２は、実施形態の紫外線発光装置の概略斜視図である。FIG. 2 is a schematic perspective view of the ultraviolet light emitting device of the embodiment. 図３は、従来例の紫外線発光素子パッケージの概略断面図である。FIG. 3 is a schematic cross-sectional view of a conventional ultraviolet light emitting device package. 図４は、他の従来例の紫外線発光装置の概略断面図である。FIG. 4 is a schematic cross-sectional view of another conventional ultraviolet light emitting device.
　以下では、本実施形態の紫外線発光装置１０について、図１及び図２に基づいて説明する。 Hereinafter, the ultraviolet light emitting device 10 of the present embodiment will be described with reference to FIGS. 1 and 2.
　紫外線発光装置１０は、実装基板２と、紫外線発光素子１と、レンズ３２と、レンズ支持部材３１と、を備える。紫外線発光装置１０は、実装基板２とレンズ３２とレンズ支持部材３１とで、紫外線発光素子１を収納するパッケージを構成している。また、紫外線発光装置１０は、レンズ支持部材３１とレンズ３２とで、蓋３を構成している。 The ultraviolet light emitting device 10 includes a mounting substrate 2, an ultraviolet light emitting element 1, a lens 32, and a lens support member 31. In the ultraviolet light emitting device 10, the mounting substrate 2, the lens 32, and the lens support member 31 constitute a package for housing the ultraviolet light emitting element 1. In the ultraviolet light emitting device 10, the lens support member 31 and the lens 32 constitute the lid 3.
　紫外線発光素子１は、紫外線（紫外光）を放射する固体発光素子である。紫外線発光素子１としては、紫外ＬＥＤチップを採用しているが、これに限らず、紫外半導体レーザチップを採用することもできる。 The ultraviolet light emitting element 1 is a solid light emitting element that emits ultraviolet light (ultraviolet light). As the ultraviolet light emitting element 1, an ultraviolet LED chip is adopted, but not limited to this, an ultraviolet semiconductor laser chip can also be adopted.
　実装基板２は、紫外線発光素子１を実装する基板である。「実装する」とは、紫外線発光素子１を配置して機械的に接続すること及び電気的に接続することを含む概念である。このため、実装基板２は、紫外線発光素子１を機械的に保持する機能と、紫外線発光素子１へ給電するための配線を形成する機能と、を備えている。紫外線発光素子１は、実装基板２の第１面２ａ側に実装されている。実装基板２は、複数個の紫外線発光素子１を実装できるように構成されている。実装基板２は、実装可能な紫外線発光素子１の個数を特に限定するものではない。例えば、実装基板２は、実装可能な紫外線発光素子１の個数が１個でもよい。 The mounting substrate 2 is a substrate on which the ultraviolet light emitting element 1 is mounted. “Mounting” is a concept that includes arranging and mechanically connecting the ultraviolet light emitting elements 1 and electrically connecting them. For this reason, the mounting substrate 2 has a function of mechanically holding the ultraviolet light emitting element 1 and a function of forming a wiring for supplying power to the ultraviolet light emitting element 1. The ultraviolet light emitting element 1 is mounted on the first surface 2 a side of the mounting substrate 2. The mounting substrate 2 is configured so that a plurality of ultraviolet light emitting elements 1 can be mounted. The number of the ultraviolet light emitting elements 1 that can be mounted on the mounting substrate 2 is not particularly limited. For example, the mounting substrate 2 may have only one ultraviolet light emitting element 1 that can be mounted.
　レンズ支持部材３１は、レンズ３２を支持する機能を有する。レンズ支持部材３１は、金属製である。レンズ支持部材３１は、実装基板２に固定されている。レンズ支持部材３１は、実装基板２と接合することで、実装基板２に固定されているのが好ましい。 The lens support member 31 has a function of supporting the lens 32. The lens support member 31 is made of metal. The lens support member 31 is fixed to the mounting substrate 2. The lens support member 31 is preferably fixed to the mounting substrate 2 by bonding to the mounting substrate 2.
　レンズ３２は、紫外線発光素子１から放射される紫外線の配光を制御する機能を有する。レンズ３２は、実装基板２の第１面２ａ側で紫外線発光素子１から離れて配置される。レンズ３２は、実装基板２の厚み方向において、実装基板２及び紫外線発光素子１から離れて配置されている。 The lens 32 has a function of controlling the light distribution of ultraviolet rays emitted from the ultraviolet light emitting element 1. The lens 32 is arranged away from the ultraviolet light emitting element 1 on the first surface 2 a side of the mounting substrate 2. The lens 32 is arranged away from the mounting substrate 2 and the ultraviolet light emitting element 1 in the thickness direction of the mounting substrate 2.
　レンズ３２は、屈伏点が６００℃以下のガラスにより形成された非球面レンズである。これにより、紫外線発光装置１０は、レンズ３２の薄型化を図ることが可能となる。 The lens 32 is an aspherical lens formed of glass having a yield point of 600 ° C. or less. Thereby, the ultraviolet light emitting device 10 can reduce the thickness of the lens 32.
　レンズ３２とレンズ支持部材３１とは、直接接合されている。これにより、紫外線発光装置１０は、信頼性の向上を図ることが可能となる。「直接接合」とは、接着剤等を用いることなく接合されていることを意味する。レンズ３２は、レンズ支持部材３１に溶着されている。これにより、レンズ３２とレンズ支持部材３１とは、直接接合されている。要するに、レンズ３２は、レンズ支持部材３１への溶着のみによって、レンズ支持部材３１と直接接合されている。 The lens 32 and the lens support member 31 are directly joined. Thereby, the ultraviolet light emitting device 10 can improve the reliability. “Direct bonding” means bonding without using an adhesive or the like. The lens 32 is welded to the lens support member 31. Thereby, the lens 32 and the lens support member 31 are directly joined. In short, the lens 32 is directly joined to the lens support member 31 only by welding to the lens support member 31.
　紫外線発光装置１０の各構成要素については、以下に、より詳細に説明する。 Each component of the ultraviolet light emitting device 10 will be described in more detail below.
　紫外線発光素子１としては、上述のように、紫外線を放射する紫外ＬＥＤチップを採用することができる。紫外ＬＥＤチップは、例えば、発光層の材料としてＡｌＧａＮ系材料を採用しており、発光波長が２１０ｎｍ～３６０ｎｍの紫外波長領域にあるＬＥＤチップである。発光波長は、発光ピーク波長を意味する。 As the ultraviolet light emitting element 1, as described above, an ultraviolet LED chip that emits ultraviolet light can be employed. The ultraviolet LED chip is, for example, an LED chip that employs an AlGaN-based material as the material of the light emitting layer and has an emission wavelength in the ultraviolet wavelength region of 210 nm to 360 nm. The emission wavelength means the emission peak wavelength.
　紫外ＬＥＤチップは、例えば、サファイア基板の一表面側に、ＡｌＮ層、ｎ形窒化物半導体層、発光層、電子ブロック層、ｐ形窒化物半導体層及びｐ形コンタクト層が積層された構成を備えたＬＥＤチップを採用できる。このＬＥＤチップは、ｎ形窒化物半導体層に電気的に接続された第１電極と、ｐ形コンタクト層を介してｐ形窒化物半導体層に電気的に接続された第２電極と、を備えている。ｎ形窒化物半導体層は、例えば、ｎ形ＡｌxＧａ1-xＮ（０＜ｘ＜１）層により構成できる。発光層は、ＡｌＧａＮ系材料からなる量子井戸構造を有している。量子井戸構造は、障壁層と、井戸層と、で構成されている。量子井戸構造は、多重量子井戸構造でもよいし、単一量子井戸構造でもよい。発光層は、所望の発光波長の紫外光を発光するように井戸層のＡｌの組成比を設定してある。ＡｌＧａＮ系材料からなる発光層では、Ａｌの組成比を変化させることにより、発光波長を２１０～３６０ｎｍの範囲で任意の発光波長に設定することが可能である。例えば、所望の発光波長が２６５ｎｍ付近である場合には、Ａｌの組成比を０．５０に設定すればよい。また、紫外ＬＥＤチップは、発光層を単層構造として、発光層と、この発光層の厚み方向の両側の層と、でダブルヘテロ構造が形成されるようにしてもよい。発光層の厚み方向の両側の層は、例えば、その一方をｎ形窒化物半導体層とし、他方をｐ形窒化物半導体層とすることができる。紫外ＬＥＤチップの構造は、特に限定するものではない。 The ultraviolet LED chip has, for example, a configuration in which an AlN layer, an n-type nitride semiconductor layer, a light emitting layer, an electron block layer, a p-type nitride semiconductor layer, and a p-type contact layer are stacked on one surface side of a sapphire substrate. LED chip can be adopted. The LED chip includes a first electrode electrically connected to the n-type nitride semiconductor layer, and a second electrode electrically connected to the p-type nitride semiconductor layer via the p-type contact layer. ing. The n-type nitride semiconductor layer can be constituted by, for example, an n-type Al x Ga 1-x N (0 <x <1) layer. The light emitting layer has a quantum well structure made of an AlGaN-based material. The quantum well structure is composed of a barrier layer and a well layer. The quantum well structure may be a multiple quantum well structure or a single quantum well structure. In the light emitting layer, the Al composition ratio of the well layer is set so as to emit ultraviolet light having a desired emission wavelength. In the light emitting layer made of an AlGaN-based material, the light emission wavelength can be set to an arbitrary light emission wavelength in the range of 210 to 360 nm by changing the Al composition ratio. For example, when the desired emission wavelength is around 265 nm, the Al composition ratio may be set to 0.50. The ultraviolet LED chip may have a light emitting layer having a single layer structure, and a double hetero structure may be formed by the light emitting layer and the layers on both sides in the thickness direction of the light emitting layer. For example, one of the layers on both sides in the thickness direction of the light emitting layer can be an n-type nitride semiconductor layer and the other can be a p-type nitride semiconductor layer. The structure of the ultraviolet LED chip is not particularly limited.
　紫外ＬＥＤチップは、チップサイズを、０．３９ｍｍ□（０．３９ｍｍ×０．３９ｍｍ）としてある。紫外ＬＥＤチップのチップサイズは、特に限定するものではない。紫外ＬＥＤチップのチップサイズは、例えば、０．３ｍｍ□（０．３ｍｍ×０．３ｍｍ）、０．４５ｍｍ□（０．４５ｍｍ×０．４５ｍｍ）、１ｍｍ□（１ｍｍ×１ｍｍ）、等でもよい。また、紫外ＬＥＤチップの外周形状は、正方形状に限らず、例えば、長方形状や、正六角形状等でもよい。 The ultraviolet LED chip has a chip size of 0.39 mm □ (0.39 mm × 0.39 mm). The chip size of the ultraviolet LED chip is not particularly limited. The chip size of the ultraviolet LED chip may be, for example, 0.3 mm □ (0.3 mm × 0.3 mm), 0.45 mm □ (0.45 mm × 0.45 mm), 1 mm □ (1 mm × 1 mm), or the like. Further, the outer peripheral shape of the ultraviolet LED chip is not limited to a square shape, and may be, for example, a rectangular shape or a regular hexagonal shape.
　また、紫外ＬＥＤチップは、厚さを０．１６ｍｍ程度としてあるが、厚さを特に限定するものではない。 Moreover, although the thickness of the ultraviolet LED chip is about 0.16 mm, the thickness is not particularly limited.
　紫外線発光素子１は、この紫外線発光素子１の厚み方向の一面側に、第１電極及び第２電極が配置されている。これにより、紫外線発光素子１は、第１電極及び第２電極それぞれを、実装基板２において第１の所定のパターンで形成された導体層（図示せず）に対して、導電性のバンプ７ａ、７ｂを介して電気的に接続することができる。この導体層（以下、「第１導体層」という。）は、紫外線発光素子１の第１電極が接続される第１導体部と第２電極が接続される第２導体部とが、空間的に分離され電気的に絶縁されるように形成されている。紫外線発光装置１０は、紫外線発光素子１として、厚み方向の一面側に第１電極及び第２電極が配置され当該一面側から光を取り出す紫外ＬＥＤチップを用いてもよい。この場合、紫外線発光装置１０は、紫外線発光素子１の第１電極と第１導体部とを第１ワイヤを介して電気的に接続し、第２電極と第２導体部とを第２ワイヤを介して電気的に接続するようにしてもよい。第１ワイヤ及び第２ワイヤとしては、例えば、Ａｕ線、Ａｌ線、Ａｌ－Ｓｉ線、Ｃｕ線等を採用することができる。 The ultraviolet light emitting element 1 has a first electrode and a second electrode arranged on one surface side in the thickness direction of the ultraviolet light emitting element 1. As a result, the ultraviolet light emitting element 1 causes the first electrode and the second electrode to be electrically conductive bumps 7a on the conductor layer (not shown) formed in the first predetermined pattern on the mounting substrate 2, respectively. 7b can be electrically connected. This conductor layer (hereinafter referred to as “first conductor layer”) has a spatial relationship between the first conductor portion to which the first electrode of the ultraviolet light emitting element 1 is connected and the second conductor portion to which the second electrode is connected. So that they are separated and electrically insulated. The ultraviolet light emitting device 10 may use, as the ultraviolet light emitting element 1, an ultraviolet LED chip in which the first electrode and the second electrode are arranged on one surface side in the thickness direction and take out light from the one surface side. In this case, the ultraviolet light emitting device 10 electrically connects the first electrode of the ultraviolet light emitting element 1 and the first conductor part via the first wire, and connects the second electrode and the second conductor part to the second wire. You may make it electrically connect via. As the first wire and the second wire, for example, an Au wire, an Al wire, an Al—Si wire, a Cu wire, or the like can be adopted.
　紫外線発光素子１は、厚み方向の一面側に第１電極及び第２電極が設けられた紫外ＬＥＤチップに限らない。紫外線発光素子１は、例えば、厚み方向の一面側に第１電極が設けられ、他面側に第２電極が設けられた紫外ＬＥＤチップでもよい。このような紫外線発光素子１は、第１電極と第２電極とのうちの一方の電極を、導電性の接合材を介して実装基板２の第１導体層にダイボンドし、他方の電極を、第３ワイヤを介して第１導体層に電気的に接続するようにすればよい。導電性の接合材としては、例えば、半田や導電ペースト等を採用することができる。導電ペーストとしては、例えば、銀ペースト、金ペースト、銅ペースト等を採用することができる。第３ワイヤとしては、例えば、Ａｕ線、Ａｌ線、Ａｌ－Ｓｉ線、Ｃｕ線等を採用することができる。 The ultraviolet light emitting element 1 is not limited to the ultraviolet LED chip in which the first electrode and the second electrode are provided on one surface side in the thickness direction. The ultraviolet light emitting element 1 may be, for example, an ultraviolet LED chip in which a first electrode is provided on one surface side in the thickness direction and a second electrode is provided on the other surface side. Such an ultraviolet light emitting element 1 is formed by die-bonding one of the first electrode and the second electrode to the first conductor layer of the mounting substrate 2 through a conductive bonding material, What is necessary is just to make it electrically connect to a 1st conductor layer via a 3rd wire. As the conductive bonding material, for example, solder, conductive paste, or the like can be employed. As the conductive paste, for example, a silver paste, a gold paste, a copper paste, or the like can be employed. As the third wire, for example, an Au wire, an Al wire, an Al—Si wire, a Cu wire, or the like can be used.
　実装基板２の外周形状は、円形状としてある。実装基板２の外周形状は、円形状に限らず、例えば、矩形状、矩形以外の多角形状等でもよい。実装基板２は、基台２１と、２本のリード端子２５と、を備えている。 The outer peripheral shape of the mounting substrate 2 is circular. The outer peripheral shape of the mounting substrate 2 is not limited to a circular shape, and may be, for example, a rectangular shape or a polygonal shape other than a rectangular shape. The mounting board 2 includes a base 21 and two lead terminals 25.
　基台２１は、金属板と、金属板の第１面側に形成された電気絶縁層（図示せず）と、電気絶縁層上に形成された第１導体層と、を備えている。基台２１は、金属板の外周部から外方へ突出したフランジ２１ｂを有している。フランジ２１ｂの厚さは、金属板の中央部の厚さよりも薄く設定してあるのが好ましい。この場合、フランジ２１ｂは、金属板の外周部のうち金属板の第１面から離れた部位から外方へ突出しているのが好ましい。要するに、フランジ２１ｂは、金属板の厚み方向に沿った方向において、金属板の第１面よりも後退した位置にあるのが好ましい。 The base 21 includes a metal plate, an electric insulation layer (not shown) formed on the first surface side of the metal plate, and a first conductor layer formed on the electric insulation layer. The base 21 has a flange 21b that protrudes outward from the outer peripheral portion of the metal plate. The thickness of the flange 21b is preferably set thinner than the thickness of the central portion of the metal plate. In this case, it is preferable that the flange 21b protrudes outward from a portion of the outer peripheral portion of the metal plate that is away from the first surface of the metal plate. In short, it is preferable that the flange 21b is in a position that is retracted from the first surface of the metal plate in the direction along the thickness direction of the metal plate.
　第１導体層は、複数個の紫外線発光素子１を直列接続可能に構成してある。第１導体層は、これに限らず、複数個の紫外線発光素子１を並列接続可能に構成してもよいし、直並列接続可能に構成してもよい。要するに、紫外線発光装置１０は、複数個の紫外線発光素子１が直列接続された構成を有していてもよいし、複数個の紫外線発光素子１が並列接続された構成を有してもよいし、複数個の紫外線発光素子１が直並列接続された構成を有してもよい。 The first conductor layer is configured such that a plurality of ultraviolet light emitting elements 1 can be connected in series. The first conductor layer is not limited to this, and a plurality of ultraviolet light emitting elements 1 may be configured to be connected in parallel, or may be configured to be connected in series and parallel. In short, the ultraviolet light emitting device 10 may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in series, or may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in parallel. A plurality of ultraviolet light emitting elements 1 may be connected in series and parallel.
　基台２１の外周形状は、円形状としてある。基台２１の外周形状は、円形状に限らず、例えば、矩形状や矩形以外の多角形状等でもよい。 The outer peripheral shape of the base 21 is circular. The outer peripheral shape of the base 21 is not limited to a circular shape, and may be, for example, a rectangular shape or a polygonal shape other than a rectangular shape.
　金属板の材料としては、熱伝導率の高い金属が好ましい。このため、金属板の材料としては、銅を採用することができる。金属板の材料は、銅に限らず、例えば、アルミニウム、アルミニウム合金、銀、リン青銅、銅合金（例えば、４２アロイ等）、ニッケル合金、鉄、コバール（Kovar）等を採用することができる。金属板は、上述の材料からなる母材の表面に、表面処理層（図示せず）を設けたものでもよい。表面処理層としては、例えば、Ａｕ膜、Ａｌ膜、Ａｇ膜、Ｎｉ膜とＰｄ膜とＡｕ膜との積層膜、Ｎｉ膜とＡｕ膜との積層膜、Ａｇ膜とＰｄ膜とＡｕＡｇ合金膜との積層膜等を採用することができる。表面処理層は、めっき層等により構成することが好ましい。要するに、表面処理層は、めっき法により形成することが好ましい。 As the material of the metal plate, a metal having high thermal conductivity is preferable. For this reason, copper can be adopted as the material of the metal plate. The material of the metal plate is not limited to copper, and for example, aluminum, aluminum alloy, silver, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, iron, Kovar, or the like can be employed. The metal plate may be provided with a surface treatment layer (not shown) on the surface of a base material made of the above-described material. Examples of the surface treatment layer include an Au film, an Al film, an Ag film, a laminated film of an Ni film, a Pd film, and an Au film, a laminated film of an Ni film, an Au film, an Ag film, a Pd film, and an AuAg alloy film. A laminated film or the like can be employed. The surface treatment layer is preferably composed of a plating layer or the like. In short, the surface treatment layer is preferably formed by a plating method.
　第１導体層の材料としては、例えば、銅、リン青銅、銅合金（例えば、４２アロイ等）、ニッケル合金、アルミニウム、アルミニウム合金等を採用することができる。第１導体層は、例えば、金属箔、金属膜等を利用して形成することができる。第１導体層は、例えば、Ｃｕ層とＮｉ層とＡｕ層との積層構造を有し、最表面側がＡｕ層となっているのが好ましい。第１導体層は、積層構造を有していてもよいし、単層構造でもよい。 As the material of the first conductor layer, for example, copper, phosphor bronze, copper alloy (for example, 42 alloy), nickel alloy, aluminum, aluminum alloy, or the like can be employed. The first conductor layer can be formed using, for example, a metal foil, a metal film, or the like. The first conductor layer preferably has, for example, a laminated structure of a Cu layer, a Ni layer, and an Au layer, and the outermost surface side is preferably an Au layer. The first conductor layer may have a laminated structure or a single layer structure.
　基台２１は、電気絶縁層において第１導体層が形成されていない部位と第１導体層とを覆う保護層を備えてもよい。保護層としては、例えば、白色系のレジスト層により構成することができる。レジスト層の材料としては、例えば、白色レジストを採用することができる。白色レジストは、例えば、白色顔料を含有した樹脂である。白色顔料としては、例えば、硫酸バリウム（ＢａＳＯ4）、二酸化チタン（ＴｉＯ2）等が挙げられる。樹脂としては、例えば、シリコーン樹脂等が挙げられる。白色レジストとしては、例えば、株式会社朝日ラバーのシリコーン製の白色レジスト材である“ASA COLOR（登録商標） RESIST INK”等を採用することができる。白色系のレジスト層は、例えば、塗布法により形成することができる。 The base 21 may include a protective layer that covers a portion of the electrical insulating layer where the first conductor layer is not formed and the first conductor layer. As the protective layer, for example, a white resist layer can be used. As a material for the resist layer, for example, a white resist can be employed. The white resist is, for example, a resin containing a white pigment. Examples of the white pigment include barium sulfate (BaSO 4 ) and titanium dioxide (TiO 2 ). Examples of the resin include a silicone resin. As the white resist, for example, “ASA COLOR (registered trademark) RESIST INK”, which is a white resist material made of silicone manufactured by Asahi Rubber Co., Ltd., can be used. The white resist layer can be formed by, for example, a coating method.
　紫外線発光装置１０は、保護層が白色系のレジスト層であることにより、紫外線発光素子１から実装基板２に入射する光を、保護層の表面で反射させやすくなる。これにより、紫外線発光装置１０は、紫外線発光素子１から放射された光が実装基板２に吸収されるのを抑制することが可能となる。よって、紫外線発光装置１０は、外部への光取り出し効率の向上による光出力の向上を図ることが可能となる。 In the ultraviolet light emitting device 10, since the protective layer is a white resist layer, the light incident on the mounting substrate 2 from the ultraviolet light emitting element 1 is easily reflected on the surface of the protective layer. Thereby, the ultraviolet light emitting device 10 can suppress the light emitted from the ultraviolet light emitting element 1 from being absorbed by the mounting substrate 2. Therefore, the ultraviolet light emitting device 10 can improve the light output by improving the light extraction efficiency to the outside.
　紫外線発光装置１０は、紫外線発光素子１が、電気絶縁層よりも熱伝導率の高い材料により形成された板状のサブマウント部材（図示せず）を介して金属板に搭載された構成としてもよい。これにより、紫外線発光装置１０では、紫外線発光素子１で発生した熱の伝熱経路として、紫外線発光素子１で発生した熱を、電気絶縁層を介さずにサブマウント部材及び金属板に伝熱させる伝熱経路が形成される。よって、紫外線発光装置１０は、放熱性を向上させることが可能となる。 The ultraviolet light emitting device 10 may have a configuration in which the ultraviolet light emitting element 1 is mounted on a metal plate via a plate-shaped submount member (not shown) formed of a material having a higher thermal conductivity than the electrical insulating layer. Good. Thereby, in the ultraviolet light emitting device 10, the heat generated in the ultraviolet light emitting element 1 is transferred to the submount member and the metal plate without passing through the electrical insulating layer as a heat transfer path of the heat generated in the ultraviolet light emitting element 1. A heat transfer path is formed. Therefore, the ultraviolet light emitting device 10 can improve heat dissipation.
　サブマウント部材の平面サイズは、複数個の紫外線発光素子１を配置することができるサイズに設定するのが好ましい。この場合、サブマウント部材の平面サイズは、複数個の紫外線発光素子１を合わせたサイズよりも大きく設定するのが好ましい。サブマウント部材の材料としては、電気絶縁層よりも熱伝導率が高く、且つ、その線膨張係数が金属板の線膨張係数と紫外線発光素子１の線膨張係数との間の値にある材料が好ましい。これにより、紫外線発光装置１０は、紫外線発光素子１とサブマウント部材との接合部（以下、「第１接合部」という。）に熱応力に起因して割れが発生するのを抑制することが可能となる。サブマウント部材の材料としては、例えば、ＡｌＮを採用することができる。サブマウント部材には、複数個の紫外線発光素子１を例えば直列接続可能となるように、第２の所定のパターンで形成された導体層（以下、「第２導体層」という。）を設ければよい。この場合、第１導体層は、サブマウント部材上に形成された直列回路に給電可能となるように第３の所定のパターンで形成すればよい。第２導体層は、複数個の紫外線発光素子１を並列接続可能に構成してもよいし、直並列接続可能に構成してもよい。要するに、紫外線発光装置１０は、複数個の紫外線発光素子１がサブマウント部材上で直列接続された構成を有していてもよいし、複数個の紫外線発光素子１がサブマウント部材上で並列接続された構成を有してもよいし、複数個の紫外線発光素子１がサブマウント部材上で直並列接続された構成を有してもよい。 The planar size of the submount member is preferably set to a size that allows a plurality of ultraviolet light emitting elements 1 to be disposed. In this case, the planar size of the submount member is preferably set larger than the combined size of the plurality of ultraviolet light emitting elements 1. As a material of the submount member, a material having a thermal conductivity higher than that of the electrical insulating layer and having a linear expansion coefficient between the linear expansion coefficient of the metal plate and the linear expansion coefficient of the ultraviolet light emitting element 1 is used. preferable. As a result, the ultraviolet light emitting device 10 can suppress the occurrence of cracks due to thermal stress at the joint between the ultraviolet light emitting element 1 and the submount member (hereinafter referred to as “first joint”). It becomes possible. As a material of the submount member, for example, AlN can be adopted. The submount member is provided with a conductor layer (hereinafter referred to as “second conductor layer”) formed in a second predetermined pattern so that a plurality of ultraviolet light emitting elements 1 can be connected in series, for example. That's fine. In this case, the first conductor layer may be formed in a third predetermined pattern so that power can be supplied to the series circuit formed on the submount member. The second conductor layer may be configured so that a plurality of ultraviolet light emitting elements 1 can be connected in parallel, or may be configured so that series-parallel connection is possible. In short, the ultraviolet light emitting device 10 may have a configuration in which a plurality of ultraviolet light emitting elements 1 are connected in series on a submount member, or a plurality of ultraviolet light emitting elements 1 are connected in parallel on a submount member. Alternatively, a plurality of ultraviolet light emitting elements 1 may be connected in series and parallel on the submount member.
　サブマウント部材は、接合部（以下、「第２接合部」という。）を介して金属板と接合すればよい。第２接合部の材料としては、例えば、ＡｕＳｎ、ＳｎＡｇＣｕ等の鉛フリー半田が好ましい。紫外線発光装置１０は、第２接合部の材料としてＡｕＳｎを採用する場合、製造時において、金属板の第１面における接合表面に予めＡｕ又はＡｇからなる金属層を形成する前処理が必要である。第２接合部は、導電ペーストから形成してもよい。導電ペーストとしては、例えば、銀ペースト、金ペースト、銅ペースト等を採用することができる。 The submount member may be joined to the metal plate via a joint (hereinafter referred to as “second joint”). As a material for the second bonding portion, for example, lead-free solder such as AuSn or SnAgCu is preferable. When the ultraviolet light emitting device 10 employs AuSn as the material of the second bonding portion, it is necessary to perform a pretreatment in which a metal layer made of Au or Ag is previously formed on the bonding surface of the first surface of the metal plate at the time of manufacture. . The second joint portion may be formed from a conductive paste. As the conductive paste, for example, a silver paste, a gold paste, a copper paste, or the like can be employed.
　第２導体層の材料としては、例えば、Ａｕ、Ａｇ等を採用することができる。紫外線発光装置１０は、紫外線発光素子１がバンプ７ａ、７ｂを介して第２導体層に電気的に接続された構成の場合、第２導体層の材料がバンプ７ａ、７ｂの材料と同じであるのが好ましい。紫外線発光装置１０は、例えば、バンプ７ａ、７ｂの材料がＡｕの場合、第２導体層の材料もＡｕであるのが好ましい。ただし、第２導体層は、単層構造に限らず、多層構造でもよい。第２導体層は、多層構造の場合、最表層がバンプ７ａ、７ｂの材料と同じ材料により形成されているのが好ましい。 As the material of the second conductor layer, for example, Au, Ag or the like can be adopted. In the ultraviolet light emitting device 10, when the ultraviolet light emitting element 1 is electrically connected to the second conductor layer via the bumps 7a and 7b, the material of the second conductor layer is the same as the material of the bumps 7a and 7b. Is preferred. In the ultraviolet light emitting device 10, for example, when the material of the bumps 7a and 7b is Au, the material of the second conductor layer is preferably Au. However, the second conductor layer is not limited to a single layer structure, and may be a multilayer structure. When the second conductor layer has a multilayer structure, the outermost layer is preferably formed of the same material as that of the bumps 7a and 7b.
　サブマウント部材の材料は、ＡｌＮに限らず、例えば、Ｓｉ、ＣｕＷ、複合ＳｉＣ、等を採用してもよい。紫外線発光装置１０は、サブマウント部材の材料として絶縁体でないＳｉやＣｕＷ等を採用する場合、ＳｉやＣｕＷ等からなる母材の表面に絶縁膜を設け、その絶縁膜上に第２導体層を形成した構成とすればよい。 The material of the submount member is not limited to AlN, and for example, Si, CuW, composite SiC, or the like may be employed. When the ultraviolet light emitting device 10 employs non-insulator Si, CuW, or the like as the material of the submount member, an insulating film is provided on the surface of the base material made of Si, CuW, etc., and the second conductor layer is formed on the insulating film. What is necessary is just to set it as the formed structure.
　紫外線発光装置１０は、紫外線発光素子１が厚み方向の一面側に第１電極、他面側に第２電極を有する紫外ＬＥＤチップの場合、紫外線発光素子１とサブマウント部材とを、例えば、半田、導電ペースト等を用いて接合することができる。半田としては、ＳｎＰｂ、ＡｕＳｎ、ＳｎＡｇＣｕ等が挙げられる。導電ペーストとしては、例えば、銀ペースト等が挙げられる。紫外線発光装置１０は、紫外線発光素子１とサブマウント部材の第２導体層とが、ＡｕＳｎ、ＳｎＡｇＣｕ等の鉛フリー半田により接合されているのが好ましい。この場合、第２導体層は、Ａｕ層、Ａｇ層などの金属層により構成されているのが好ましい。第２導体層は、例えば、蒸着法、スパッタ法、ＣＶＤ（Chemical Vapor Deposition）法等を利用して形成することができる。 When the ultraviolet light emitting device 10 is an ultraviolet LED chip having the first electrode on one surface side in the thickness direction and the second electrode on the other surface side, the ultraviolet light emitting device 1 and the submount member are, for example, soldered. Bonding can be performed using a conductive paste or the like. Examples of solder include SnPb, AuSn, SnAgCu, and the like. Examples of the conductive paste include silver paste. In the ultraviolet light emitting device 10, the ultraviolet light emitting element 1 and the second conductor layer of the submount member are preferably joined by lead-free solder such as AuSn or SnAgCu. In this case, the second conductor layer is preferably composed of a metal layer such as an Au layer or an Ag layer. The second conductor layer can be formed using, for example, an evaporation method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
　紫外線発光装置１０は、紫外線発光素子１が、厚み方向の一面側に第１電極、他面側に第２電極を有する紫外ＬＥＤチップの場合、サブマウント部材が、紫外線発光素子１と金属板との線膨張率差に起因して紫外線発光素子１に働く応力を緩和する機能を有する。サブマウント部材は、応力を緩和する機能だけでなく、紫外線発光素子１で発生した熱を金属板において紫外線発光素子１のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有する。したがって、紫外線発光装置１０は、紫外線発光素子１で発生した熱をサブマウント部材及び金属板を介して効率良く放熱させることが可能となる。 In the ultraviolet light emitting device 10, when the ultraviolet light emitting element 1 is an ultraviolet LED chip having a first electrode on one surface side in the thickness direction and a second electrode on the other surface side, the submount member includes the ultraviolet light emitting element 1 and a metal plate. It has a function to relieve stress acting on the ultraviolet light emitting element 1 due to the difference in linear expansion coefficient. The submount member has not only a function of relieving stress, but also a heat conduction function of transferring heat generated in the ultraviolet light emitting element 1 to a range wider than the chip size of the ultraviolet light emitting element 1 on the metal plate. Therefore, the ultraviolet light emitting device 10 can efficiently dissipate the heat generated in the ultraviolet light emitting element 1 through the submount member and the metal plate.
　リード端子２５は、ピン状に形成されており、基台２１の厚み方向に貫通している。基台２１には、リード端子２５が貫通する貫通孔が形成されている。リード端子２５と貫通孔の内周面との間には、電気絶縁材料（例えば、ガラス等）からなる封止部（図示せず）が設けられている。２本のリード端子２５は、外部からの給電用の端子である。各リード端子２５は、基台２１の第１面２１ａ側において、第１導体層と図示しないワイヤ（以下、「第４ワイヤ」という。）を介して電気的に接続されている。第４ワイヤとしては、例えば、Ａｕ線を採用することができる。第４ワイヤとしては、Ａｕ線に限らず、Ａｌ線を採用してもよい。Ａｕ線としては、例えば、線径が１８μｍ～２５μｍ程度の細線を採用することができる。Ａｌ線としては、例えば、線径が２５μｍ～２００μｍの細線を採用することができる。第４ワイヤとしてＡｌ線を採用した場合には、Ａｕ線を採用した場合に比べて、大電流を流すことが可能となる。なお、第４ワイヤとしては、Ａｕ線やＡｌ線に限らず、Ａｌ－Ｓｉ線、Ｃｕ線等を採用してもよい。 The lead terminal 25 is formed in a pin shape and penetrates in the thickness direction of the base 21. The base 21 has a through hole through which the lead terminal 25 passes. A sealing portion (not shown) made of an electrically insulating material (for example, glass) is provided between the lead terminal 25 and the inner peripheral surface of the through hole. The two lead terminals 25 are terminals for power feeding from the outside. Each lead terminal 25 is electrically connected to the first conductor layer on the first surface 21 a side of the base 21 via a wire (not shown) (hereinafter referred to as “fourth wire”). For example, an Au wire can be adopted as the fourth wire. The fourth wire is not limited to the Au wire but may be an Al wire. As the Au wire, for example, a thin wire having a wire diameter of about 18 μm to 25 μm can be used. As the Al wire, for example, a thin wire having a wire diameter of 25 μm to 200 μm can be adopted. When an Al wire is used as the fourth wire, a larger current can be passed than when an Au wire is used. The fourth wire is not limited to Au wire or Al wire, but may be Al—Si wire, Cu wire, or the like.
　実装基板２は、給電用の端子が、ピン状のリード端子２５により構成されたものに限らない。実装基板２は、金属板の第１面側とは反対の第２面側に、紫外線発光装置１０をプリント基板等に表面実装するための導体層（以下、「第３導体層」という。）が、給電用の端子として設けられた構成でもよい。この場合、実装基板２は、第３導体層と金属板との間に、電気絶縁材料からなる絶縁層を備えた構成とすればよい。また、実装基板２は、基台２１の第１面２１ａ側においてレンズ支持部材３１よりも外側で露出する領域を有し、当該領域に第１導体層の一部が給電用の端子として設けられた構成でもよい。 The mounting substrate 2 is not limited to the one in which the power supply terminal is configured by the pin-shaped lead terminal 25. The mounting substrate 2 is a conductor layer (hereinafter referred to as “third conductor layer”) for surface mounting the ultraviolet light emitting device 10 on a printed circuit board or the like on the second surface side opposite to the first surface side of the metal plate. However, the structure provided as a terminal for electric power feeding may be sufficient. In this case, the mounting substrate 2 may be configured to include an insulating layer made of an electrically insulating material between the third conductor layer and the metal plate. The mounting substrate 2 has a region exposed outside the lens support member 31 on the first surface 21a side of the base 21, and a part of the first conductor layer is provided as a power supply terminal in the region. Other configurations may be used.
　レンズ支持部材３１は、実装基板２の第１面２ａ側で実装基板２における紫外線発光素子１の実装領域を囲んで配置されている。逆に言えば、実装基板２は、平面視においてレンズ支持部材３１の内周線に囲まれた領域が、実装領域を構成する。つまり、実装領域は、レンズ支持部材３１により規定される。 The lens support member 31 is disposed on the first surface 2 a side of the mounting substrate 2 so as to surround the mounting region of the ultraviolet light emitting element 1 on the mounting substrate 2. In other words, in the mounting substrate 2, a region surrounded by the inner peripheral line of the lens support member 31 in a plan view constitutes a mounting region. That is, the mounting area is defined by the lens support member 31.
　レンズ支持部材３１は、筒状の形状に形成されている。より具体的には、レンズ支持部材３１は、円筒状の形状に形成されている。レンズ支持部材３１は、実装基板２に近い側の端部（以下、「第１端部」という。）３１ａから外方へ突出したフランジ３１ｂを有している。レンズ支持部材３１は、フランジ３１ｂが、実装基板２のフランジ２１ｂに重ねて接合されている。要するに、紫外線発光装置１０は、レンズ支持部材３１のフランジ３１ｂと実装基板２のフランジ２１ｂとが接合されている。 The lens support member 31 is formed in a cylindrical shape. More specifically, the lens support member 31 is formed in a cylindrical shape. The lens support member 31 has a flange 31 b that protrudes outward from an end portion (hereinafter referred to as “first end portion”) 31 a on the side close to the mounting substrate 2. The lens support member 31 has a flange 31 b joined to the flange 21 b of the mounting substrate 2 so as to overlap. In short, in the ultraviolet light emitting device 10, the flange 31b of the lens support member 31 and the flange 21b of the mounting substrate 2 are joined.
　レンズ支持部材３１の内径は、３ｍｍに設定してあるが、この値に限定するものではない。 The inner diameter of the lens support member 31 is set to 3 mm, but is not limited to this value.
　レンズ支持部材３１は、円筒状に限らず、筒状の形状であればよく、例えば、角筒状でもよい。フランジ３１ｂの外周形状は、円形状である。フランジ３１ｂの外周形状は、円形状に限らず、例えば、楕円形状や多角形状等でもよい。 The lens support member 31 is not limited to a cylindrical shape, and may be a cylindrical shape, for example, a rectangular tube shape. The outer peripheral shape of the flange 31b is circular. The outer peripheral shape of the flange 31b is not limited to a circular shape, and may be, for example, an elliptical shape or a polygonal shape.
　レンズ支持部材３１の材料である金属としては、ステンレス鋼を採用している。これにより、紫外線発光装置１０は、紫外線発光素子１からの紫外線によるレンズ支持部材３１の経時劣化を抑制することが可能となる。また、レンズ支持部材３１は、ステンレス鋼により形成することによって、放熱性、生産性及び耐食性等を向上させることが可能となる。レンズ支持部材３１は、例えば、ステンレス鋼板に対してプレス加工や削り出し加工等の加工を施すことにより形成すればよい。ステンレス鋼としては、例えば、Ｆｅ－Ｃｒ－Ｎｉ合金鋼（オーステナイト系ステンレス鋼）等を採用することができる。オーステナイト系ステンレス鋼としては、例えば、ＳＵＳ３０４等を採用することができる。 Stainless steel is used as the metal that is the material of the lens support member 31. Thereby, the ultraviolet light emitting device 10 can suppress deterioration of the lens support member 31 with time due to ultraviolet rays from the ultraviolet light emitting element 1. Further, the lens support member 31 can be made of stainless steel to improve heat dissipation, productivity, corrosion resistance, and the like. The lens support member 31 may be formed, for example, by subjecting a stainless steel plate to processing such as press processing or machining. As the stainless steel, for example, Fe—Cr—Ni alloy steel (austenitic stainless steel) or the like can be employed. As an austenitic stainless steel, SUS304 etc. are employable, for example.
　レンズ支持部材３１の材料である金属は、ステンレス鋼に限らず、例えば、コバール（Kovar）を採用することができる。コバールは、鉄にニッケル、コバルトを配合した合金である。コバールの成分比の一例は、重量％で、鉄：５３．５重量％、ニッケル：２９重量％、コバルト：１７重量％、シリコン：０．２重量％、マンガン：０．３重量％、である。コバールの成分比は、特に限定するものではない。紫外線発光装置１０は、レンズ支持部材３１の材料である金属がコバールの場合、レンズ支持部材３１として、例えば、コバールからなる母体の表面を酸化することにより酸化膜が形成された構成のものを採用してもよい。 The metal that is the material of the lens support member 31 is not limited to stainless steel, and for example, Kovar can be used. Kovar is an alloy containing iron and nickel. An example of the component ratio of Kovar is, by weight, iron: 53.5% by weight, nickel: 29% by weight, cobalt: 17% by weight, silicon: 0.2% by weight, manganese: 0.3% by weight. . The component ratio of Kovar is not particularly limited. When the metal that is the material of the lens support member 31 is Kovar, the ultraviolet light emitting device 10 employs a configuration in which an oxide film is formed as a lens support member 31 by, for example, oxidizing the surface of a mother body made of Kovar. May be.
　レンズ３２は、両凸型の非球面レンズである。レンズ３２は、第１レンズ面３２ａａが紫外線発光素子１側に位置し、第２レンズ面３２ａｂが紫外線発光素子１側とは反対側に位置している。第１レンズ面３２ａａは、非球面の第１凸曲面である。第２レンズ面３２ａｂは、非球面の第２凸曲面である。第１凸曲面及び第２凸曲面は、それぞれ、曲率が連続的に変化している。第１レンズ面３２ａａと第２レンズ面３２ａｂとは、同じ形状でもよいし、異なる形状でもよい。 The lens 32 is a biconvex aspherical lens. The lens 32 has a first lens surface 32aa located on the ultraviolet light emitting element 1 side and a second lens surface 32ab located on the opposite side to the ultraviolet light emitting element 1 side. The first lens surface 32aa is an aspheric first convex curved surface. The second lens surface 32ab is an aspherical second convex curved surface. The curvatures of the first convex curved surface and the second convex curved surface change continuously. The first lens surface 32aa and the second lens surface 32ab may have the same shape or different shapes.
　レンズ３２を構成する非球面レンズは、両凸型の非球面レンズに限らず、例えば、平凸型の非球面レンズや平凹型の非球面レンズでもよい。 The aspheric lens constituting the lens 32 is not limited to a biconvex aspheric lens, and may be a plano-convex aspheric lens or a plano-concave aspheric lens, for example.
　ところで、紫外線の配光を制御するために用いられるレンズの材料は、石英ガラスが一般的である。しかしながら、石英ガラスの屈伏点は、１２８０℃である。このため、石英ガラスを材料とするレンズは、成形型（金型等）を用いた成形により形成することが、極めて難しい。これは、成形型には、ガラスとの固着を防ぐために離型性を有する離型膜を設ける必要があるが、石英ガラスの屈伏点が離型膜の耐熱温度を超えているからである。 Incidentally, quartz glass is generally used as a lens material used for controlling the light distribution of ultraviolet rays. However, the yield point of quartz glass is 1280 ° C. For this reason, it is extremely difficult to form a lens made of quartz glass by molding using a molding die (such as a mold). This is because the mold must be provided with a release film having releasability in order to prevent sticking to the glass, but the yield point of quartz glass exceeds the heat resistance temperature of the release film.
　図３に示した紫外線発光素子パッケージ２１０における集光レンズ２１７は、石英ガラスからなるので、研削加工により半球状に加工されていると推考される。 Since the condenser lens 217 in the ultraviolet light emitting element package 210 shown in FIG. 3 is made of quartz glass, it is presumed that it is processed into a hemisphere by grinding.
　そして、本願発明者らは、離型膜の耐熱性を考慮して、レンズ３２の材料として、屈伏点が６００℃以下のガラスを用いることを考えた。本実施形態の紫外線発光装置１０では、レンズ３２の材料として、屈伏点が６００℃以下のガラスを採用している。これにより、紫外線発光装置１０は、レンズ３２を、成形により形成された非球面レンズとすることが可能となる。よって、紫外線発光装置１０は、レンズ３２が非球面レンズであることにより、半球状のレンズである場合に比べて、レンズ３２の薄型化を図ることが可能となり、また、光取り出し効率の向上を図ることが可能となる。また、紫外線発光装置１０の製造にあたっては、レンズ３２を成形により形成することができるので、研削により形成する場合に比べて、レンズ３２の生産性を向上させることが可能となる。 The inventors of the present application have considered using glass having a yield point of 600 ° C. or less as the material of the lens 32 in consideration of the heat resistance of the release film. In the ultraviolet light emitting device 10 of the present embodiment, glass having a yield point of 600 ° C. or less is adopted as the material of the lens 32. Thereby, the ultraviolet light emitting device 10 can make the lens 32 an aspherical lens formed by molding. Therefore, the ultraviolet light emitting device 10 can reduce the thickness of the lens 32 and improve the light extraction efficiency as compared with the case where the lens 32 is a hemispherical lens. It becomes possible to plan. Further, when the ultraviolet light emitting device 10 is manufactured, the lens 32 can be formed by molding, so that the productivity of the lens 32 can be improved as compared with the case where it is formed by grinding.
　レンズ３２の材料であるガラスとしては、紫外線発光素子１が放射する紫外線に対する透過率が７０％以上であるのが好ましく、８０％以上であるのがより好ましい。このため、レンズ３２の材料であるガラスとしては、屈伏点が６００℃以下で且つ深紫外波長域の紫外線（例えば、波長が２６５ｎｍの紫外線）に対する透過率が８０％であるという条件を満たす硼珪酸ガラスを採用している。この種の硼珪酸ガラスとしては、例えば、ＳＣＨＯＴＴ社製の８３３７Ｂを採用することができる。 The glass that is the material of the lens 32 preferably has a transmittance of 70% or more, more preferably 80% or more, for the ultraviolet rays emitted from the ultraviolet light emitting element 1. For this reason, the glass used as the material of the lens 32 is borosilicate that satisfies the condition that the yield point is 600 ° C. or less and the transmittance for ultraviolet rays in the deep ultraviolet wavelength region (for example, ultraviolet rays having a wavelength of 265 nm) is 80%. Glass is used. As this type of borosilicate glass, for example, 8337B manufactured by SCHOTT can be used.
　これにより、紫外線発光装置１０は、紫外線発光素子１から放射される紫外線に対するレンズ３２の透過率を８０％以上とすることが可能となる。紫外線発光装置１０は、例えば、高効率白色照明、殺菌、医療、環境汚染物質を高速で処理する用途等の分野で利用する場合、紫外線発光素子１が、２１０ｎｍ～２８０ｎｍの紫外波長域に発光波長を有するのが好ましい。つまり、紫外線発光素子１は、ＵＶ－Ｃの波長域に発光波長を有するのが好ましい。ＵＶ－Ｃの波長域は、例えば国際照明委員会（ＣＩＥ）における紫外線の波長による分類によれば、１００ｎｍ～２８０ｎｍである。 Thereby, the ultraviolet light emitting device 10 can make the transmittance of the lens 32 with respect to the ultraviolet rays emitted from the ultraviolet light emitting element 1 80% or more. For example, when the ultraviolet light emitting device 10 is used in fields such as high-efficiency white illumination, sterilization, medical treatment, and high-speed treatment of environmental pollutants, the ultraviolet light emitting element 1 emits light in the ultraviolet wavelength region of 210 nm to 280 nm. It is preferable to have. That is, it is preferable that the ultraviolet light emitting element 1 has an emission wavelength in the UV-C wavelength region. The wavelength range of UV-C is, for example, 100 nm to 280 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination (CIE).
　レンズ支持部材３１の材料である金属の線膨張係数は、レンズ３２の材料である硼珪酸ガラスの線膨張係数よりも大きいのが好ましい。ただし、レンズ３２とレンズ支持部材３１との線膨張係数差に起因してレンズ３２に発生する応力を低減する観点からは、硼珪酸ガラスと金属との線膨張係数差が小さいほうが好ましい。 The linear expansion coefficient of the metal that is the material of the lens support member 31 is preferably larger than the linear expansion coefficient of the borosilicate glass that is the material of the lens 32. However, from the viewpoint of reducing the stress generated in the lens 32 due to the difference in linear expansion coefficient between the lens 32 and the lens support member 31, it is preferable that the difference in linear expansion coefficient between the borosilicate glass and the metal is small.
　紫外線発光装置１０は、上述のように、レンズ３２とレンズ支持部材３１とが、直接接合されている。 In the ultraviolet light emitting device 10, the lens 32 and the lens support member 31 are directly bonded as described above.
　レンズ３２とレンズ支持部材３１とは、レンズ３２の外周面とレンズ支持部材３１における実装基板２から遠い側の端部（以下、「第２端部」という。）３１ｃの内周面とが、直接接合されているのが好ましい。これにより、紫外線発光装置１０は、図４に示した紫外線発光装置３１０における透光性部材３２３のように集光レンズ３２３ａに連続一体に形成された平坦部を備えている場合に比べて、ガラスの使用量を低減することが可能となる。また、紫外線発光装置１０は、レンズ支持部材３１の材料である金属の線膨張係数が、レンズ３２の材料である硼珪酸ガラスの線膨張係数よりも大きいので、レンズ３２の成形と同時にレンズ３２をレンズ支持部材３１に接合することにより、レンズ支持部材３１によりレンズ３２を締め付けることが可能となる。紫外線発光装置１０は、レンズ支持部材３１が筒状の形状であるのが好ましいが、角筒状よりも円筒状であるのが、より好ましい。これは、レンズ支持部材３１が円筒状であることにより、レンズ３２の成形時にレンズ支持部材３１からレンズ３２にかかる応力を均一化することが可能となり、レンズ３２の品質の安定性を図ることが可能となるからである。レンズ支持部材３１は、内周形状が正多角形状の場合、円形により近くなる正多角形状のほうが、レンズ３２の品質の安定性を図るうえで好ましい。 The lens 32 and the lens support member 31 include an outer peripheral surface of the lens 32 and an inner peripheral surface of an end portion (hereinafter referred to as a “second end portion”) 31 c far from the mounting substrate 2 in the lens support member 31. Direct bonding is preferred. As a result, the ultraviolet light emitting device 10 is more glassy than the case where the flat portion formed integrally with the condenser lens 323a is provided like the translucent member 323 in the ultraviolet light emitting device 310 shown in FIG. It becomes possible to reduce the usage-amount of. Moreover, since the linear expansion coefficient of the metal which is the material of the lens support member 31 is larger than the linear expansion coefficient of the borosilicate glass which is the material of the lens 32, the ultraviolet light emitting device 10 By joining to the lens support member 31, the lens 32 can be tightened by the lens support member 31. In the ultraviolet light emitting device 10, the lens support member 31 is preferably in a cylindrical shape, but more preferably in a cylindrical shape rather than a rectangular tube shape. This is because the lens support member 31 is cylindrical, so that the stress applied from the lens support member 31 to the lens 32 during molding of the lens 32 can be made uniform, and the quality of the lens 32 can be stabilized. This is because it becomes possible. When the inner peripheral shape of the lens support member 31 is a regular polygonal shape, a regular polygonal shape that is closer to a circle is more preferable in terms of stability of the quality of the lens 32.
　レンズ支持部材３１とレンズ３２とからなる蓋３は、実装基板２に接合されている。蓋３は、実装基板２の第１面２ａ側で複数個の紫外線発光素子１を覆っている。 The lid 3 composed of the lens support member 31 and the lens 32 is joined to the mounting substrate 2. The lid 3 covers the plurality of ultraviolet light emitting elements 1 on the first surface 2 a side of the mounting substrate 2.
　蓋３の製造にあたっては、下記の第１ステップ、第２ステップ及び第３ステップを順次行う。 In manufacturing the lid 3, the following first step, second step and third step are sequentially performed.
　第１ステップでは、下型、上型、レンズ３２の元になるレンズ素材、及び外枠、を配置する。下型は、レンズ支持部材３１の第１端部３１ａ側からレンズ支持部材３１の内側に嵌め込まれる型である。上型は、レンズ支持部材３１の第２端部３１ｃ側で下型に対向する型である。外枠は、上型とレンズ支持部材３１とが嵌め込まれる筒状の枠である。本明細書では、下型と上型と外枠とを併せて成形型と称する。 In the first step, the lower mold, the upper mold, the lens material from which the lens 32 is based, and the outer frame are arranged. The lower mold is a mold that is fitted into the lens support member 31 from the first end 31 a side of the lens support member 31. The upper mold is a mold that faces the lower mold on the second end portion 31 c side of the lens support member 31. The outer frame is a cylindrical frame into which the upper mold and the lens support member 31 are fitted. In this specification, the lower mold, the upper mold, and the outer frame are collectively referred to as a mold.
　下型は、上面が、レンズ３２の第１レンズ面３２ａａの形状に対応した第１成形面を構成する。上型は、下面が、レンズ３２の第２レンズ面３２ａｂの形状に対応した第２成形面を構成する。第１成形面及び第２成形面は、鏡面性を有するのが好ましい。「鏡面性を有する」とは、例えば、ＪＩＳ　Ｂ　０６０１－２００１及びＩＳＯ　４２８７－１９９７で規定されている算術平均粗さＲａが１００ｎｍ以下であることを意味する。 The upper surface of the lower mold constitutes a first molding surface corresponding to the shape of the first lens surface 32aa of the lens 32. In the upper mold, the lower surface forms a second molding surface corresponding to the shape of the second lens surface 32ab of the lens 32. The first molding surface and the second molding surface preferably have mirror properties. “Having specularity” means, for example, that the arithmetic average roughness Ra defined by JIS B 0601-2001 and ISO 4287-1997 is 100 nm or less.
　レンズ素材の材料は、上述の硼珪酸ガラスである。これにより、蓋３の製造方法では、レンズ３２における第１レンズ面３２ａａ及び第２レンズ面３２ａｂの形状精度の高精度化を図ることが可能となる。 The material of the lens material is the above-described borosilicate glass. Thereby, in the manufacturing method of the lid | cover 3, it becomes possible to achieve the high precision of the shape accuracy of the 1st lens surface 32aa and the 2nd lens surface 32ab in the lens 32. FIG.
　レンズ素材の形状は、球状としている。レンズ素材は、球状に限らず、例えば、円板状等の板状としてもよい。 The shape of the lens material is spherical. The lens material is not limited to a spherical shape, and may be a plate shape such as a disk shape.
　外枠は、円筒状の形状としてある。外枠は、下型の中心軸と上型の中心軸とを一直線上に揃える機能を有する。また、外枠は、レンズ支持部材３１、下型及び上型を保持する機能を有する。 The outer frame has a cylindrical shape. The outer frame has a function of aligning the center axis of the lower mold and the center axis of the upper mold in a straight line. The outer frame has a function of holding the lens support member 31, the lower mold, and the upper mold.
　下型、上型及び外枠は、例えば、窒化珪素、炭化珪素、グラファイト等から形成されたものを採用することができる。下型及び上型には、離型膜が設けられている。 As the lower mold, the upper mold, and the outer frame, for example, those formed from silicon nitride, silicon carbide, graphite, or the like can be used. A release film is provided on the lower mold and the upper mold.
　第２ステップでは、外枠の外側からレンズ素材を加熱して軟化させてから冷却することによりレンズ３２を成形し且つレンズ３２とレンズ支持部材３１とを溶着させる。 In the second step, the lens material is heated from the outside of the outer frame to be softened and then cooled to form the lens 32 and the lens 32 and the lens support member 31 are welded together.
　第３ステップでは、蓋３を下型、上型及び外枠から取り外す。要するに、第３ステップでは、離型を行う。 In the third step, the lid 3 is removed from the lower mold, the upper mold and the outer frame. In short, in the third step, release is performed.
　以上説明した蓋３の製造方法は、一例であり、特に限定するものではない。 The method for manufacturing the lid 3 described above is an example and is not particularly limited.
　本実施形態の紫外線発光装置１０は、実装基板２と、実装基板２の第１面２ａ側に実装された紫外線発光素子１と、実装基板２の第１面２ａ側で紫外線発光素子１から離れて配置され紫外線発光素子１から放射される紫外線の配光を制御するレンズ３２と、実装基板２に固定されレンズ３２を支持する金属製のレンズ支持部材３１と、を備える。また、紫外線発光装置１０は、レンズ３２が、屈伏点が６００℃以下のガラスにより形成された非球面レンズであり、レンズ３２と金属製のレンズ支持部材３１とが、直接接合されている。これにより、紫外線発光装置１０は、レンズの薄型化を図ることが可能で且つ信頼性の向上を図ることが可能となる。 The ultraviolet light emitting device 10 of the present embodiment is separated from the ultraviolet light emitting element 1 on the mounting substrate 2, the ultraviolet light emitting element 1 mounted on the first surface 2 a side of the mounting substrate 2, and the first surface 2 a side of the mounting substrate 2. And a lens 32 that controls the distribution of ultraviolet rays emitted from the ultraviolet light emitting element 1 and a metal lens support member 31 that is fixed to the mounting substrate 2 and supports the lens 32. Further, in the ultraviolet light emitting device 10, the lens 32 is an aspherical lens formed of glass having a yield point of 600 ° C. or less, and the lens 32 and the metal lens support member 31 are directly bonded. As a result, the ultraviolet light emitting device 10 can reduce the thickness of the lens and improve the reliability.
　紫外線発光装置１０は、レンズ３２と金属製のレンズ支持部材３１とが、接着剤を介さずに直接接合されているので、信頼性の向上を図ることが可能となる。また、紫外線発光装置１０は、レンズ３２にフランジを設ける必要がないので、レンズ３２の小型化を図れ、ガラスの使用量の低減による低コスト化を図ることが可能となる。 In the ultraviolet light emitting device 10, since the lens 32 and the metal lens support member 31 are directly joined without using an adhesive, it is possible to improve the reliability. Further, since the ultraviolet light emitting device 10 does not need to be provided with a flange on the lens 32, the lens 32 can be reduced in size, and the cost can be reduced by reducing the amount of glass used.
　上述の実施形態等において説明した各図は、模式的なものであり、各構成要素の大きさや厚さそれぞれの比が、必ずしも実際のものの寸法比を反映しているとは限らない。また、実施形態等に記載した材料、数値等は、好ましいものを例示しているだけであり、それに限定するものではない。更に、本願発明は、その技術的思想の範囲を逸脱しない範囲で、構成に適宜変更を加えることが可能である。 The drawings described in the above-described embodiments and the like are schematic, and the ratio of the size and thickness of each component does not necessarily reflect the actual dimensional ratio. In addition, the materials, numerical values, and the like described in the embodiments and the like are merely preferable examples and are not limited thereto. Furthermore, the present invention can be appropriately modified in configuration without departing from the scope of its technical idea.

Claims (3)

  1. 　実装基板と、前記実装基板の第１面側に実装された紫外線発光素子と、前記実装基板の前記第１面側で前記紫外線発光素子から離れて配置され前記紫外線発光素子から放射される紫外線の配光を制御するレンズと、前記実装基板に固定され前記レンズを支持する金属製のレンズ支持部材と、を備え、前記レンズは、屈伏点が６００℃以下のガラスにより形成された非球面レンズであり、前記レンズと前記レンズ支持部材とは、直接接合されていることを特徴とする紫外線発光装置。 A mounting substrate; an ultraviolet light emitting element mounted on the first surface side of the mounting substrate; and an ultraviolet ray emitted from the ultraviolet light emitting element disposed away from the ultraviolet light emitting element on the first surface side of the mounting substrate. A lens for controlling light distribution; and a metal lens support member that is fixed to the mounting substrate and supports the lens. The lens is an aspherical lens formed of glass having a yield point of 600 ° C. or less. And the lens and the lens support member are directly bonded to each other.
  2. 　前記レンズ支持部材が筒状の形状であり、前記レンズと前記レンズ支持部材とは、前記レンズの外周面と前記レンズ支持部材における前記実装基板から遠い側の端部の内周面とが、直接接合されていることを特徴とする請求項１記載の紫外線発光装置。 The lens support member has a cylindrical shape, and the lens and the lens support member are formed by directly connecting an outer peripheral surface of the lens and an inner peripheral surface of an end portion of the lens support member on the side far from the mounting substrate. The ultraviolet light emitting device according to claim 1, wherein the ultraviolet light emitting device is bonded.
  3. 　前記レンズ支持部材は、前記筒状の形状が円筒状の形状であることを特徴とする請求項２記載の紫外線発光装置。 3. The ultraviolet light emitting device according to claim 2, wherein the cylindrical supporting member has a cylindrical shape.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5838357B1 (en) * 2015-01-13 2016-01-06 パナソニックＩｐマネジメント株式会社 Light emitting device and manufacturing method thereof
JP2016051798A (en) * 2014-08-29 2016-04-11 大日本印刷株式会社 Method of manufacturing mounting board and mounting board
JP2016207683A (en) * 2015-04-15 2016-12-08 エヌイーシー ショット コンポーネンツ株式会社 Through electrode substrate and semiconductor package
JP2017139444A (en) * 2016-01-29 2017-08-10 セイコーエプソン株式会社 Light source device, method for manufacturing light source device, and projector
JP2017138566A (en) * 2016-01-29 2017-08-10 セイコーエプソン株式会社 Light source device, manufacturing method for light source device, and projector
US9818923B2 (en) 2014-12-26 2017-11-14 Panasonic Intellectual Property Management Co., Ltd. Light emitting device and method for manufacturing same
JP2017216389A (en) * 2016-06-01 2017-12-07 信越石英株式会社 Silica glass member for hermetic seal of ultraviolet smd type led element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6558259B2 (en) * 2016-02-03 2019-08-14 ウシオ電機株式会社 Semiconductor laser device and manufacturing method thereof
CN108461613A (en) * 2018-05-31 2018-08-28 深圳市瑞丰光电紫光技术有限公司 A kind of UV-LED light sources and its lamps and lanterns

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619685A (en) * 1979-07-25 1981-02-24 Nec Home Electronics Ltd Manufacture of lens cap for optical semiconductor
JP2002121032A (en) * 2000-10-06 2002-04-23 Hoya Corp Method of manufacturing glass gob, method of manufacturing glass formed parts and apparatus for manufacturing glass gob
JP2007250817A (en) * 2006-03-16 2007-09-27 Stanley Electric Co Ltd Led
JP2008171883A (en) * 2007-01-09 2008-07-24 Matsushita Electric Ind Co Ltd Lid with lens
JP2009188217A (en) * 2008-02-07 2009-08-20 Panasonic Corp Lid with lens
JP2012211041A (en) * 2011-03-31 2012-11-01 Nihon Yamamura Glass Co Ltd Optical glass

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619685A (en) * 1979-07-25 1981-02-24 Nec Home Electronics Ltd Manufacture of lens cap for optical semiconductor
JP2002121032A (en) * 2000-10-06 2002-04-23 Hoya Corp Method of manufacturing glass gob, method of manufacturing glass formed parts and apparatus for manufacturing glass gob
JP2007250817A (en) * 2006-03-16 2007-09-27 Stanley Electric Co Ltd Led
JP2008171883A (en) * 2007-01-09 2008-07-24 Matsushita Electric Ind Co Ltd Lid with lens
JP2009188217A (en) * 2008-02-07 2009-08-20 Panasonic Corp Lid with lens
JP2012211041A (en) * 2011-03-31 2012-11-01 Nihon Yamamura Glass Co Ltd Optical glass

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016051798A (en) * 2014-08-29 2016-04-11 大日本印刷株式会社 Method of manufacturing mounting board and mounting board
US9818923B2 (en) 2014-12-26 2017-11-14 Panasonic Intellectual Property Management Co., Ltd. Light emitting device and method for manufacturing same
JP5838357B1 (en) * 2015-01-13 2016-01-06 パナソニックＩｐマネジメント株式会社 Light emitting device and manufacturing method thereof
JP2016127249A (en) * 2015-01-13 2016-07-11 パナソニックＩｐマネジメント株式会社 Light emission device and manufacturing method for the same
JP2016207683A (en) * 2015-04-15 2016-12-08 エヌイーシー ショット コンポーネンツ株式会社 Through electrode substrate and semiconductor package
JP2017139444A (en) * 2016-01-29 2017-08-10 セイコーエプソン株式会社 Light source device, method for manufacturing light source device, and projector
JP2017138566A (en) * 2016-01-29 2017-08-10 セイコーエプソン株式会社 Light source device, manufacturing method for light source device, and projector
JP2017216389A (en) * 2016-06-01 2017-12-07 信越石英株式会社 Silica glass member for hermetic seal of ultraviolet smd type led element

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