JP2010278316A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2010278316A
JP2010278316A JP2009130780A JP2009130780A JP2010278316A JP 2010278316 A JP2010278316 A JP 2010278316A JP 2009130780 A JP2009130780 A JP 2009130780A JP 2009130780 A JP2009130780 A JP 2009130780A JP 2010278316 A JP2010278316 A JP 2010278316A
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light
led chip
mounting substrate
emitting device
surface side
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Akira Tomoida
亮 友井田
Kaoru Tone
薫 戸根
Takumi Taura
巧 田浦
Yoshiharu Sanagawa
佳治 佐名川
Takeshi Nakasuji
威 中筋
Masao Kirihara
昌男 桐原
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device whose structure is simplified and which is improved in S/N ratio of an optical detection part although employing constitution wherein an optical detection part which detects part of light emitted by an LED chip is provided to a mounting substrate in one body. <P>SOLUTION: The light emitting device includes the mounting substrate 2 which has the LED chip 1 mounted on one surface side and also has the optical detection part 4 for detecting the light emitted by the LED chip 1, and a lens part 3 which controls distribution of the light emitted by the LED chip 1. The mounting substrate 2 is formed using one silicon substrate (semiconductor substrate) 20a, wherein the optical detection part 4 has a light reception part 4a, receiving the light from the LED chip 1, formed on the one surface side of the mounting substrate 2 by the LED chip 1, and also has a waveguide 5, guiding part of the light emitted by the LED chip 1 to a light reception surface of the light reception part 4a by repetition of total reflection, provided on the one surface side of the mounting substrate 2 not right above the LED chip 1. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を用いた発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、図９に示すように、ＬＥＤチップ１と、ＬＥＤチップ１を収納するパッケージＡとを備え、ＬＥＤチップ１から放射される光を検出するフォトダイオードからなる光検出部４がパッケージＡに一体に設けられた発光装置が提案されている（例えば、特許文献１参照）。   Conventionally, as shown in FIG. 9, the package A includes an LED chip 1 and a package A that houses the LED chip 1, and a light detection unit 4 that includes a photodiode that detects light emitted from the LED chip 1. An integrally provided light emitting device has been proposed (see, for example, Patent Document 1).

上述のパッケージＡは、ＬＥＤチップ１が収納される収納凹所２ｂが一表面に形成されＬＥＤチップ１が実装される実装基板２ａと、実装基板２ａの上記一表面側で収納凹所２ｂを閉塞する形で配設された透光性部材８とで構成され、光検出部４が実装基板２ａにおける収納凹所２ｂの周部から内方へ突出する突出部２ｃに形成されており、収納凹所２ｂ内がＬＥＤチップ１を封止した透光性封止材（例えば、シリコーン樹脂など）からなる封止部９により充実されている。   In the package A, the housing recess 2b in which the LED chip 1 is housed is formed on one surface, the mounting substrate 2a on which the LED chip 1 is mounted, and the housing recess 2b is closed on the one surface side of the mounting substrate 2a. The light detecting portion 4 is formed in a protruding portion 2c that protrudes inward from the peripheral portion of the storage recess 2b in the mounting substrate 2a. The inside of the place 2b is filled with a sealing portion 9 made of a light-transmitting sealing material (for example, silicone resin) that seals the LED chip 1.

ここにおいて、実装基板２ａは、シリコン基板２０ａを用いて形成されＬＥＤチップ１が実装されるベース基板２０と、シリコン基板４０ａを用いて形成され光取出窓４１が形成されるとともに光検出部４が形成された光検出部形成基板４０と、シリコン基板３０ａを用いて形成されてなり光取出窓４１に連通する開口窓３１が形成されベース基板２０と光検出部形成基板４０との間に介在する配光用基板３０とで構成されており、光検出部４は、配光用基板３０に形成された貫通孔配線３４およびベース基板２０に形成された貫通孔配線２４を介して外部接続用電極２７ｃ，２７ｄと電気的に接続されている。なお、ＬＥＤチップ１は、ベース基板２０に形成された図示しない貫通孔配線を介して図示しない外部接続用電極と電気的に接続されている。   Here, the mounting substrate 2a is formed using the silicon substrate 20a, the base substrate 20 on which the LED chip 1 is mounted, the silicon substrate 40a is formed, the light extraction window 41 is formed, and the light detection unit 4 is formed. An opening window 31 formed using the formed light detection portion forming substrate 40 and the silicon substrate 30a and communicating with the light extraction window 41 is formed and interposed between the base substrate 20 and the light detection portion formation substrate 40. The light detection unit 4 includes an external connection electrode through a through hole wiring 34 formed in the light distribution substrate 30 and a through hole wiring 24 formed in the base substrate 20. 27c and 27d are electrically connected. The LED chip 1 is electrically connected to an external connection electrode (not shown) through a through-hole wiring (not shown) formed in the base substrate 20.

上述の図９に示した構成の発光装置では、実装基板２ａにおいてＬＥＤチップ１を収納する収納凹所２ｂの周部から内方へ突出する突出部２ｃに、ＬＥＤチップ１から放射される光を検出する光検出部４が形成されているので、実装基板２ａの上記一表面側において収納凹所２ｂの周囲に光検出部４を配置するためのスペースを別途に確保する必要がなく、光検出部４を実装基板２ａに設けながらも平面サイズの小型化が可能になるという利点がある。   In the light emitting device having the configuration shown in FIG. 9 described above, the light emitted from the LED chip 1 is projected to the projecting portion 2c projecting inward from the peripheral portion of the housing recess 2b for housing the LED chip 1 in the mounting substrate 2a. Since the light detection unit 4 to be detected is formed, it is not necessary to secure a separate space for arranging the light detection unit 4 around the housing recess 2b on the one surface side of the mounting substrate 2a. There is an advantage that the planar size can be reduced while the portion 4 is provided on the mounting substrate 2a.

しかして、例えば、ＬＥＤチップ１として赤色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として緑色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として青色ＬＥＤチップを採用した発光装置とを同一の回路基板上に近接して配置して、当該回路基板に各発光装置のＬＥＤチップ１を駆動する駆動回路部と、各光検出部４の出力がそれぞれの目標値に保たれるように駆動回路部から各発光色のＬＥＤチップ１に流れる電流をフィードバック制御する制御回路部などを設けておくことにより、各光検出部４それぞれの出力に基づいて各発光色のＬＥＤチップ１の光出力を各別に制御することができ、各発光色ごとのＬＥＤチップ１の光出力の経時変化の違いなどによらず混色光（ここでは、白色光）の光色や色温度の精度を向上することができる。要するに、所望の混色光を安定して得ることができる。   Thus, for example, a light emitting device employing a red LED chip as the LED chip 1, a light emitting device employing a green LED chip as the LED chip 1, and a light emitting device employing a blue LED chip as the LED chip 1 are the same circuit. A drive circuit unit that is arranged close to the substrate and drives the LED chip 1 of each light-emitting device on the circuit board, and a drive circuit unit so that the output of each light detection unit 4 is maintained at the target value. By providing a control circuit unit that feedback-controls the current flowing from the LED chip 1 of each emission color to the light output of the LED chip 1 of each emission color based on the output of each light detection unit 4 It is possible to control the accuracy of the light color and color temperature of the mixed color light (here, white light) regardless of the temporal change in the light output of the LED chip 1 for each emission color. It can be. In short, desired mixed color light can be stably obtained.

また、従来から、図１０に示すように、リードフレームを用いて形成され、ＬＥＤチップ２０１とフォトダイオードチップ２０４とが実装された実装基板２０２と、ＬＥＤチップ２０１とフォトダイオードチップ２０４と実装基板２０２とを封止した透光性樹脂成形部２０５とを備え、透光性樹脂成形部２０５の表面に、ＬＥＤチップ２０１に光軸が一致しＬＥＤチップ２０１から放射された光を集光する集光レンズ部２０６と、ＬＥＤチップ２０１から放射された光の一部を全反射してフォトダイオード２０４へ入射させる反射部２０７，２０８とが形成されてなる発光装置（光モジュール）が提案されている（例えば、特許文献２参照）。なお、図１０中の破線はＬＥＤチップ２０１から放射された光の光路を示し、二点差線ＭはＬＥＤチップ２０１の光軸を示している。   Conventionally, as shown in FIG. 10, a mounting substrate 202 formed by using a lead frame, on which the LED chip 201 and the photodiode chip 204 are mounted, the LED chip 201, the photodiode chip 204, and the mounting substrate 202 is provided. A light-transmitting resin molded portion 205 that is sealed with the light-transmitting resin molded portion 205, and a light collecting unit that collects light emitted from the LED chip 201 with the optical axis coincident with the LED chip 201 on the surface thereof. There has been proposed a light emitting device (optical module) in which a lens unit 206 and reflection units 207 and 208 that totally reflect a part of light emitted from the LED chip 201 and enter the photodiode 204 are formed ( For example, see Patent Document 2). 10 indicates the optical path of the light emitted from the LED chip 201, and the two-dot chain line M indicates the optical axis of the LED chip 201.

特開２００７−２９４８３４号公報JP 2007-294834 A 特開平１０−３２１９００号公報JP-A-10-321900

ところで、図９に示した構成の発光装置では、実装基板２ａを３枚のシリコン基板２０ａ，３０ａ，４０ａを用いて形成する必要があり、構造が複雑になってしまうとともにコストが高くなってしまう。   By the way, in the light emitting device having the configuration shown in FIG. 9, it is necessary to form the mounting substrate 2a using the three silicon substrates 20a, 30a, and 40a, which makes the structure complicated and increases the cost. .

また、図１０に示した構成の発光装置は、実装基板２０２とは別にフォトダイオードチップ２０４が必要となるので、コストが高くなってしまう。また、図１０に示した構成の発光装置は、ＬＥＤチップ２０１から放射され反射部２０７，２０８で反射された光がフォトダイオードチップ２０４の受光面へ直接入射するように反射部２０７，２０８の形状などを設計してあるので、反射部２０７，２０８で反射された光の光路長が長くなって光減衰量が多くなってしまい、フォトダイオードチップ２０４のＳ／Ｎ比が低くなってしまう。   In addition, the light emitting device having the configuration shown in FIG. 10 requires a photodiode chip 204 in addition to the mounting substrate 202, which increases the cost. Further, in the light emitting device having the configuration shown in FIG. 10, the shape of the reflecting portions 207 and 208 is such that the light emitted from the LED chip 201 and reflected by the reflecting portions 207 and 208 is directly incident on the light receiving surface of the photodiode chip 204. Since the optical path length of the light reflected by the reflecting portions 207 and 208 is increased, the amount of light attenuation is increased, and the S / N ratio of the photodiode chip 204 is decreased.

本発明は上記事由に鑑みて為されたものであり、その目的は、ＬＥＤチップから放射される光の一部を検出する光検出部を実装基板に一体に設けた構成を採用しながらも、構造の簡略化を図れ、且つ、光検出部のＳ／Ｎ比の向上を図れる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and its purpose is to adopt a configuration in which a light detection unit for detecting a part of light emitted from an LED chip is integrally provided on a mounting substrate, An object of the present invention is to provide a light-emitting device that can be simplified in structure and can improve the S / N ratio of a light detection unit.

請求項１の発明は、ＬＥＤチップと、当該ＬＥＤチップが一表面側に実装されるとともにＬＥＤチップから放射された光を検出する光検出部が形成された実装基板とを備え、実装基板が１枚の半導体基板を用いて形成されるとともに、光検出部においてＬＥＤチップからの光を受光する受光部が実装基板の前記一表面側においてＬＥＤチップの側方に形成されてなり、実装基板の前記一表面側においてＬＥＤチップの真上でない位置に、ＬＥＤチップから放射された光の一部を反射の繰り返しにより受光部の受光面へ導光する導波路が設けられてなることを特徴とする。   The invention of claim 1 includes an LED chip, and a mounting board on which the LED chip is mounted on one surface side and on which a light detection unit for detecting light emitted from the LED chip is formed. A light receiving portion that receives light from the LED chip in the light detection portion is formed on a side of the LED chip on the one surface side of the mounting substrate. A waveguide that guides a part of the light emitted from the LED chip to the light receiving surface of the light receiving unit by repeated reflection is provided at a position not directly above the LED chip on one surface side.

この発明によれば、実装基板が１枚の半導体基板を用いて形成されるとともに、光検出部においてＬＥＤチップからの光を受光する受光部が実装基板の一表面側においてＬＥＤチップの側方に形成されてなり、実装基板の前記一表面側においてＬＥＤチップの真上でない位置に、ＬＥＤチップから放射された光の一部を全反射の繰り返しにより受光部の受光面へ導光する導波路が設けられているので、ＬＥＤチップから放射される光の一部を検出する光検出部を実装基板に一体に設けた構成を採用しながらも、実装基板を１枚の半導体基板を用いて形成できて構造の簡略化を図れ、且つ、ＬＥＤチップから放射される光の一部を反射の繰り返しにより光検出部の受光部へ導光する導波路が設けられていることで、ＬＥＤチップから放射された光を１回の反射で受光部へ入射させる場合に比べて、受光部に到達するまでの光減衰量を低減できて光検出部のＳ／Ｎ比の向上を図れる。   According to the present invention, the mounting substrate is formed by using one semiconductor substrate, and the light receiving portion that receives light from the LED chip in the light detection portion is located on the side of the LED chip on the one surface side of the mounting substrate. A waveguide that is formed and guides a part of the light emitted from the LED chip to the light receiving surface of the light receiving unit by repetition of total reflection at a position that is not directly above the LED chip on the one surface side of the mounting substrate. Because it is provided, the mounting substrate can be formed using a single semiconductor substrate while adopting a configuration in which the light detection unit for detecting a part of the light emitted from the LED chip is integrally provided on the mounting substrate. The structure can be simplified, and a waveguide that guides a part of the light emitted from the LED chip to the light receiving part of the light detection part by repeated reflection is provided. The The compared with the case to be incident on the light receiving unit in a single reflection, thereby improving the S / N ratio of the light detection unit can reduce the light attenuation to reach the light receiving portion.

請求項２の発明は、請求項１の発明において、前記導波路は、前記実装基板の前記一表面側に形成されたコアと、コアにおける前記実装基板側とは反対側に形成され前記ＬＥＤチップから放射される光を反射する光反射材料からなるクラッドとを備えることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the waveguide is formed on the surface of the mounting substrate on the one surface side, and on the opposite side of the core from the mounting substrate side, and the LED chip. And a clad made of a light reflecting material that reflects light emitted from the light source.

この発明によれば、前記導波路が、コアにおける前記実装基板側とは反対側に形成され前記ＬＥＤチップから放射される光を反射する光反射材料からなるクラッドを備えていることにより、当該クラッドにより前記受光部への外乱光を遮光することができ、前記光検出部のＳ／Ｎ比が外乱光の影響で低下するのを抑制することができる。   According to this invention, the waveguide includes a clad formed of a light reflecting material that is formed on a side opposite to the mounting substrate side of the core and reflects light emitted from the LED chip. Thus, disturbance light to the light receiving unit can be blocked, and the S / N ratio of the light detection unit can be prevented from being lowered due to the influence of disturbance light.

請求項３の発明は、請求項２の発明において、前記導波路は、前記実装基板の前記一表面側において前記クラッドからなる上側クラッドとの間に前記コアを挟む形で形成され前記ＬＥＤチップから放射される光を反射する光反射材料からなる下側クラッドを備えることを特徴とする。   According to a third aspect of the present invention, in the invention of the second aspect, the waveguide is formed in such a manner that the core is sandwiched between the one surface side of the mounting substrate and the upper clad composed of the clad. A lower cladding made of a light reflecting material that reflects emitted light is provided.

この発明によれば、前記導波路が、それぞれ前記ＬＥＤチップから放射される光を反射する光反射材料からなる上側クラッドと下側クラッドとの間に前記コアが挟まれた構造を有しているので、前記コアから上側クラッドおよび下側クラッドそれぞれへ漏れる光量を低減でき、前記光検出部のＳ／Ｎ比の向上を図れる。   According to this invention, the waveguide has a structure in which the core is sandwiched between an upper cladding and a lower cladding made of a light reflecting material that reflects light emitted from the LED chip, respectively. Therefore, the amount of light leaking from the core to each of the upper clad and the lower clad can be reduced, and the S / N ratio of the light detector can be improved.

請求項４の発明は、請求項２または請求項３の発明において、前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記クラッドは、レンズ部の周辺部に形成されてなることを特徴とする。   The invention of claim 4 is the invention of claim 2 or claim 3, further comprising a lens portion that is provided on the one surface side of the mounting substrate and controls light distribution of light emitted from the LED chip, and the clad Is formed in the periphery of the lens portion.

この発明によれば、前記ＬＥＤチップから放射された光の配光をレンズ部により制御でき、また、前記クラッドを容易に形成することができる。   According to this invention, the light distribution of the light emitted from the LED chip can be controlled by the lens unit, and the clad can be easily formed.

請求項５の発明は、請求項１の発明において、前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記導波路は、レンズ部の光入射面の一部もしくは光出射面の一部に設けられてなることを特徴とする。   According to a fifth aspect of the present invention, in the first aspect of the present invention, the optical system includes a lens unit that is provided on the one surface side of the mounting substrate and controls light distribution of the light emitted from the LED chip. It is characterized in that it is provided on a part of the light incident surface or part of the light exit surface.

この発明によれば、前記ＬＥＤチップから放射された光の配光をレンズ部により制御でき、また、レンズ部の周部に前記導波路を形成する場合に比べて、前記導波路を容易に形成することが可能となる。   According to this invention, the light distribution of the light emitted from the LED chip can be controlled by the lens unit, and the waveguide is easily formed as compared with the case where the waveguide is formed in the peripheral part of the lens unit. It becomes possible to do.

請求項６の発明は、請求項１ないし請求項４の発明において、前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記受光部は、平面視においてレンズ部の外側に位置していることを特徴とする。   According to a sixth aspect of the present invention, in the first to fourth aspects of the invention, the light receiving device includes a lens unit that is provided on the one surface side of the mounting substrate and controls light distribution of light emitted from the LED chip. The part is located outside the lens part in plan view.

この発明によれば、前記ＬＥＤチップから放射された光の配光をレンズ部により制御でき、また、前記受光部が平面視においてレンズ部の外側に位置していることにより、レンズ部の小型化を図りながらも前記導波路へ前記ＬＥＤチップから放射された光を入射させやすくなる。   According to the present invention, the light distribution of the light emitted from the LED chip can be controlled by the lens unit, and the lens unit can be downsized because the light receiving unit is located outside the lens unit in plan view. It becomes easy to make the light radiated | emitted from the said LED chip inject into the said waveguide, aiming at.

請求項７の発明は、請求項１ないし請求項６の発明において、前記ＬＥＤチップは、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ薄膜部、ｎ形窒化物半導体層に電気的に接続されたカソード電極およびｐ形窒化物半導体層に電気的に接続されたアノード電極がＺｎＯ結晶からなる六角錘状の錐体の下面側に形成されてなり、前記実装基板は、前記ＬＥＤチップのカソード電極およびアノード電極それぞれとバンプを介して接合される導体パターンが形成されてなることを特徴とする。   According to a seventh aspect of the present invention, in the first to sixth aspects of the present invention, the LED chip is an LED thin film portion having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, and an n-type nitride semiconductor layer. An electrically connected cathode electrode and an anode electrode electrically connected to the p-type nitride semiconductor layer are formed on the lower surface side of a hexagonal pyramid made of ZnO crystal, and the mounting substrate is A conductive pattern is formed to be bonded to each of the cathode electrode and the anode electrode of the LED chip via bumps.

この発明によれば、前記ＬＥＤチップから前記実装基板側へ放射された光の一部を前記実装基板の前記一表面側で反射させることが可能となり、前記ＬＥＤチップからの光が前記導波路へ入射しやすくなる。   According to this invention, it becomes possible to reflect a part of the light radiated from the LED chip to the mounting substrate side on the one surface side of the mounting substrate, and the light from the LED chip to the waveguide. Incidence becomes easy.

請求項１の発明では、ＬＥＤチップから放射される光の一部を検出する光検出部を実装基板に一体に設けた構成を採用しながらも、構造の簡略化を図れ、且つ、光検出部のＳ／Ｎ比の向上を図れるという効果がある。   According to the first aspect of the present invention, it is possible to simplify the structure while adopting a configuration in which the light detection unit for detecting a part of the light emitted from the LED chip is integrally provided on the mounting substrate, and the light detection unit. The S / N ratio can be improved.

実施形態１の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 1 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態２の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 2 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態３の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 3 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 参考例の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of a reference example is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態４の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 4 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態５の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 5 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態６の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 6 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 実施形態７の発光装置を示し、（ａ）は概略断面図、（ｂ）は要部概略平面図である。The light-emitting device of Embodiment 7 is shown, (a) is a schematic sectional drawing, (b) is a principal part schematic plan view. 従来例を示す概略断面図である。It is a schematic sectional drawing which shows a prior art example. 他の従来例を示す概略断面図である。It is a schematic sectional drawing which shows another prior art example.

（実施形態１）
本実施形態の発光装置は、図１に示すように、ＬＥＤチップ１と、当該ＬＥＤチップ１が一表面側に実装されるとともにＬＥＤチップ１から放射された光を検出する光検出部４が形成された実装基板２と、実装基板２の上記一表面側に設けられＬＥＤチップ１から放射された光の配光を制御するレンズ部３とを備えている。ここにおいて、本実施形態の発光装置は、実装基板２が１枚の半導体基板を用いて形成されるとともに、光検出部４においてＬＥＤチップ１からの光を受光する受光部４ａが実装基板２の上記一表面側においてＬＥＤチップ１の側方に形成されてなり、実装基板２の上記一表面側においてＬＥＤチップ１の真上でない位置に、ＬＥＤチップ１から放射された光の一部を反射の繰り返しにより受光部４ａの受光面へ導光する導波路５が設けられている。 (Embodiment 1)
As shown in FIG. 1, the light-emitting device of the present embodiment includes an LED chip 1 and a light detection unit 4 that detects the light emitted from the LED chip 1 while the LED chip 1 is mounted on one surface side. And a lens unit 3 that is provided on the one surface side of the mounting substrate 2 and controls the light distribution of the light emitted from the LED chip 1. Here, in the light emitting device of the present embodiment, the mounting substrate 2 is formed by using one semiconductor substrate, and the light receiving unit 4 a that receives light from the LED chip 1 in the light detecting unit 4 is the mounting substrate 2. It is formed on the side of the LED chip 1 on the one surface side, and reflects a part of the light emitted from the LED chip 1 at a position not directly above the LED chip 1 on the one surface side of the mounting substrate 2. A waveguide 5 that guides light to the light receiving surface of the light receiving portion 4a by repetition is provided.

上述の実装基板２は、半導体基板として導電形がｎ形で主表面である一表面が（１００）面のシリコン基板２０ａを用いて形成してある。ここにおいて、実装基板２は、シリコン基板２０ａの一表面側に、ＬＥＤチップ１の両電極それぞれと電気的に接続される２つの導体パターン２５ａ，２５ｂが形成されるとともに、光検出部４に電気的に接続された２つの導体パターン２５ｃ，２５ｄが形成されており、各導体パターン２５ａ，２５ｂ，２５ｃ，２５ｄとシリコン基板２０ａの他表面側（図１（ａ）における下面側）に形成された４つの外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄとがそれぞれ貫通孔配線２４を介して電気的に接続されている。   The mounting substrate 2 described above is formed by using a silicon substrate 20a having a (100) plane as a semiconductor substrate and having a n-type conductivity and a main surface. Here, the mounting substrate 2 is formed with two conductor patterns 25a and 25b that are electrically connected to both electrodes of the LED chip 1 on one surface side of the silicon substrate 20a. Are connected to each other, and are formed on the other surface side (the lower surface side in FIG. 1A) of each conductor pattern 25a, 25b, 25c, 25d and the silicon substrate 20a. The four external connection electrodes 27a, 27b, 27c, and 27d are electrically connected through the through-hole wiring 24, respectively.

本実施形態におけるＬＥＤチップ１は、結晶成長用基板として導電性基板を用い厚み方向の両面に電極（図示せず）が形成され、可視光（例えば、赤色光、緑色光、青色光など）を放射するＬＥＤチップである。そこで、実装基板２は、ＬＥＤチップ１が電気的に接続される２つの導体パターン２５ａ，２５ｂのうちの一方の導体パターン２５ａを、ＬＥＤチップ１がダイボンディングされる矩形状のダイパッド部２５ａａと、ダイパッド部２５ａａに連続一体に形成され貫通孔配線２４との接続部位となる引き出し配線部２５ａｂとで構成してある。要するに、ＬＥＤチップ１は、上記一方の導体パターン２５ａのダイパッド部２５ａａにダイボンディングされており、ダイパッド部２５ａａ側の電極がダイパッド部２５ａａに接合されて電気的に接続され、ダイパッド部２５ａａ側とは反対側の電極がボンディングワイヤ１４を介して他方の導体パターン２５ｂと電気的に接続されている。   The LED chip 1 in the present embodiment uses a conductive substrate as a crystal growth substrate, electrodes (not shown) are formed on both sides in the thickness direction, and emits visible light (for example, red light, green light, blue light). This is a radiating LED chip. Therefore, the mounting substrate 2 has one of the two conductor patterns 25a and 25b to which the LED chip 1 is electrically connected, a rectangular die pad portion 25aa to which the LED chip 1 is die-bonded, and The lead-out wiring part 25ab is formed integrally with the die pad part 25aa and is a connection part with the through-hole wiring 24. In short, the LED chip 1 is die-bonded to the die pad portion 25aa of the one conductor pattern 25a, and the electrode on the die pad portion 25aa side is joined to and electrically connected to the die pad portion 25aa. The opposite electrode is electrically connected to the other conductor pattern 25 b through the bonding wire 14.

また、実装基板２は、シリコン基板２０ａの上記他表面側に、シリコン基板２０ａよりも熱伝導率の高い金属材料からなる矩形状の放熱用パッド部２８が形成されており、ダイパッド部２５ａａと放熱用パッド部２８とがシリコン基板２０ａよりも熱伝導率の高い金属材料（例えば、Ｃｕなど）からなる複数（本実施形態では、９つ）の円柱状のサーマルビア２６を介して熱的に結合されており、ＬＥＤチップ１で発生した熱が各サーマルビア２６および放熱用パッド部２８を介して放熱されるようになっている。   Further, the mounting substrate 2 is formed with a rectangular heat radiation pad portion 28 made of a metal material having a higher thermal conductivity than the silicon substrate 20a on the other surface side of the silicon substrate 20a. The pad portion 28 is thermally coupled to a plurality of (in this embodiment, nine) cylindrical thermal vias 26 made of a metal material (for example, Cu) having a higher thermal conductivity than the silicon substrate 20a. The heat generated in the LED chip 1 is dissipated through the thermal vias 26 and the heat dissipating pads 28.

ところで、実装基板２は、シリコン基板２０ａに、上述の４つの貫通孔配線２４それぞれが内側に形成される４つの貫通孔２２ａと、上述の９つのサーマルビア２６それぞれが内側に形成される９つの貫通孔２２ｂとが厚み方向に貫設され、シリコン基板２０ａの上記一表面および上記他表面と各貫通孔２２ａ，２２ｂの内面とに跨って熱酸化膜（シリコン酸化膜）からなる絶縁膜２３が形成されており、各導体パターン２５ａ，２５ｂ，２５ｃ，２５ｄ、各外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、放熱用パッド部２８、各貫通孔配線２４および各サーマルビア２６がシリコン基板２０ａと電気的に絶縁されている。   By the way, the mounting substrate 2 includes nine through holes 22a in which the above-mentioned four through-hole wirings 24 are formed inside and nine above-mentioned nine thermal vias 26 in the silicon substrate 20a. A through hole 22b is provided in the thickness direction, and an insulating film 23 made of a thermal oxide film (silicon oxide film) is formed across the one surface and the other surface of the silicon substrate 20a and the inner surfaces of the through holes 22a and 22b. The conductive patterns 25a, 25b, 25c, 25d, the external connection electrodes 27a, 27b, 27c, 27d, the heat dissipation pad 28, the through-hole wirings 24, and the thermal vias 26 are formed on the silicon substrate 20a. It is electrically insulated.

ここにおいて、各導体パターン２５ａ，２５ｂ，２５ｃ，２５ｄ、各外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、放熱用パッド部２８は、絶縁膜２３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、シリコン基板２０ａの上記一表面側の各導体パターン２５ａ，２５ｂ，２５ｃ，２５ｄが同時に形成され、シリコン基板２０ａの上記他表面側の各外部接続用電極２７ａ，２７ｂ，２７ｃ，２７ｄ、放熱用パッド部２８が同時に形成してある。なお、本実施形態では、絶縁膜２３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と絶縁膜２３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。また、貫通孔配線２４およびサーマルビア２６の材料としては、Ｃｕを採用しているが、Ｃｕに限らず、例えば、Ｎｉなどを採用してもよい。   Here, each of the conductor patterns 25a, 25b, 25c, and 25d, the external connection electrodes 27a, 27b, 27c, and 27d, and the heat dissipation pad portion 28 are formed on the Ti film formed on the insulating film 23 and the Ti film. Each conductive pattern 25a, 25b, 25c, 25d on the one surface side of the silicon substrate 20a is formed at the same time, and each external pattern on the other surface side of the silicon substrate 20a is formed by a laminated film with the formed Au film. Connection electrodes 27a, 27b, 27c, and 27d and a heat dissipation pad portion 28 are formed at the same time. In this embodiment, the thickness of the Ti film on the insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 23, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Moreover, although Cu is adopted as the material of the through-hole wiring 24 and the thermal via 26, it is not limited to Cu, and for example, Ni may be adopted.

また、実装基板２は、上述の光検出部４としてフォトダイオードが形成されている。ここにおいて、光検出部４は、シリコン基板２０ａの上記一表面側に、上記フォトダイオードのｐ形領域からなる受光部４ａが形成されており、上述の２つの導体パターン２５ｃ，２５ｄのうちの一方の導体パターン２５ｃが、当該受光部４ａに電気的に接続され、他方の導体パターン２５ｄが、上記フォトダイオードのｎ形領域４ｂを構成するシリコン基板２０ａに電気的に接続されている。なお、各導体パターン２５ｃ，２５ｄは、絶縁膜２３に形成したコンタクトホール２３ｃ，２３ｄを通して光検出部４と電気的に接続されている。   In addition, the mounting substrate 2 is formed with a photodiode as the above-described light detection unit 4. Here, in the light detection unit 4, a light receiving unit 4a made of the p-type region of the photodiode is formed on the one surface side of the silicon substrate 20a, and one of the two conductor patterns 25c and 25d described above is formed. The conductor pattern 25c is electrically connected to the light receiving portion 4a, and the other conductor pattern 25d is electrically connected to the silicon substrate 20a constituting the n-type region 4b of the photodiode. The conductor patterns 25c and 25d are electrically connected to the light detection unit 4 through contact holes 23c and 23d formed in the insulating film 23.

レンズ部３は、透光性材料（例えば、シリコーン樹脂など）により形成され実装基板２の上記一表面側においてＬＥＤチップ１および当該ＬＥＤチップ１に接続されたボンディングワイヤ１４を封止した半球状のレンズ状封止部により構成されている。ここにおいて、レンズ部３の透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ポリカーボネート樹脂、ガラスなどを採用してもよい。また、レンズ部３の形状は半球状に限らず、例えば、半楕円球状の形状でもよい。なお、本実施形態では、実装基板２とレンズ部３とでパッケージを構成している。   The lens unit 3 is formed of a translucent material (for example, silicone resin) and is a hemispherical shape in which the LED chip 1 and the bonding wire 14 connected to the LED chip 1 are sealed on the one surface side of the mounting substrate 2. It is comprised by the lens-shaped sealing part. Here, the translucent material of the lens unit 3 is not limited to a silicone resin, and for example, an acrylic resin, an epoxy resin, a polycarbonate resin, glass, or the like may be employed. In addition, the shape of the lens unit 3 is not limited to a hemispherical shape, and may be a hemispherical spherical shape, for example. In the present embodiment, the mounting substrate 2 and the lens unit 3 constitute a package.

また、導波路５は、実装基板２の上記一表面側に形成されレンズ部３と同じ透光性材料からなるコア５ａと、コア５ａにおける実装基板２側とは反対側に形成されＬＥＤチップ１から放射される光を反射する光反射材料（例えば、Ａｌ、Ａｇなど）からなるクラッドである上側クラッド６と、実装基板２の上記一表面側において上側クラッド６との間にコア５ａを挟む形で形成されＬＥＤチップ１から放射される光を反射する光反射材料（例えば、Ａｌ、Ａｇなど）からなる下側クラッド２９とを備えている。しかして、導波路５のコア５ａに入射した光の一部がコア５ａと上側クラッド６との界面と、コア５ａと下側クラッド２９との界面とで、交互に反射され受光部４ａに導光される。   The waveguide 5 is formed on the one surface side of the mounting substrate 2 and made of the same light-transmitting material as the lens portion 3, and is formed on the opposite side of the core 5a from the mounting substrate 2 side. The core 5a is sandwiched between the upper clad 6 that is a clad made of a light reflecting material (for example, Al, Ag, etc.) that reflects the light emitted from the upper clad 6 on the one surface side of the mounting substrate 2. And a lower clad 29 made of a light reflecting material (for example, Al, Ag, etc.) that reflects the light emitted from the LED chip 1. Accordingly, a part of the light incident on the core 5a of the waveguide 5 is alternately reflected at the interface between the core 5a and the upper clad 6 and the interface between the core 5a and the lower clad 29 and is guided to the light receiving unit 4a. To be lighted.

本実施形態の発光装置の製造にあたっては、上述のシリコン基板２０ａとして実装基板２を多数形成可能なシリコンウェハを用い、実装基板２にＬＥＤチップ１を実装してからレンズ部３および導波路５を形成し、その後、ダイシング工程により実装基板２のサイズに分割するようにしている。   In manufacturing the light emitting device of the present embodiment, a silicon wafer capable of forming a large number of mounting substrates 2 is used as the silicon substrate 20a described above, and the LED chip 1 is mounted on the mounting substrate 2 and then the lens unit 3 and the waveguide 5 are mounted. After the formation, it is divided into the size of the mounting substrate 2 by a dicing process.

以上説明した本実施形態の発光装置は、実装基板２が１枚の半導体基板であるシリコン基板２０ａを用いて形成されるとともに、光検出部４においてＬＥＤチップ１からの光を受光する受光部４ａが実装基板２の上記一表面側においてＬＥＤチップ１の側方に形成されており、実装基板２の上記一表面側においてＬＥＤチップ１の真上でない位置に、ＬＥＤチップ１から放射された光の一部を反射の繰り返しにより受光部４ａの受光面へ導光する導波路５が設けられているので、ＬＥＤチップ１から放射される光の一部を検出する光検出部４を実装基板２に一体に設けた構成を採用しながらも、実装基板２を１枚のシリコン基板２０ａを用いて形成できて構造の簡略化を図れ、且つ、ＬＥＤチップ１から放射される光の一部を反射の繰り返しにより光検出部４の受光部４ａへ導光する導波路５が設けられていることで、ＬＥＤチップ１から放射された光を１回の反射で受光部４ａへ入射させる場合に比べて、受光部４ａに到達するまでの光減衰量を低減できて光検出部４のＳ／Ｎ比の向上を図れる。また、本実施形態の発光装置は、上述のレンズ部３を備えているので、ＬＥＤチップ１から放射された光の配光をレンズ部３により制御できる。   In the light emitting device of the present embodiment described above, the mounting substrate 2 is formed using the silicon substrate 20a which is a single semiconductor substrate, and the light detecting unit 4a receives the light from the LED chip 1 in the light detecting unit 4. Is formed at the side of the LED chip 1 on the one surface side of the mounting substrate 2, and the light emitted from the LED chip 1 is not positioned directly above the LED chip 1 on the one surface side of the mounting substrate 2. Since the waveguide 5 that guides a part of the light to the light receiving surface of the light receiving unit 4 a by repeating reflection is provided, the light detecting unit 4 that detects a part of the light emitted from the LED chip 1 is provided on the mounting substrate 2. While adopting an integrated configuration, the mounting substrate 2 can be formed using a single silicon substrate 20a, so that the structure can be simplified and a part of the light emitted from the LED chip 1 can be reflected. repetition Since the waveguide 5 for guiding the light to the light receiving part 4a of the light detecting part 4 is provided, the light received from the LED chip 1 is received compared with the case where the light is incident on the light receiving part 4a by one reflection. The amount of light attenuation until reaching the unit 4a can be reduced, and the S / N ratio of the photodetecting unit 4 can be improved. In addition, since the light emitting device of the present embodiment includes the lens unit 3 described above, the light distribution of the light emitted from the LED chip 1 can be controlled by the lens unit 3.

ところで、上側クラッド６がコア５ａよりも屈折率の小さな透光性材料により形成されている場合、使用形態によっては外乱光が光検出部４の受光部４ａの受光面へ入射してしまい、ＬＥＤチップ１からの光を精度良く検出することが難しくなる。   By the way, when the upper clad 6 is formed of a translucent material having a refractive index smaller than that of the core 5a, disturbance light may be incident on the light receiving surface of the light receiving unit 4a of the light detecting unit 4 depending on the usage form. It becomes difficult to detect light from the chip 1 with high accuracy.

また、本実施形態の発光装置では、導波路５が、実装基板２の上記一表面側に形成されたコア５ａと、コア５ａにおける実装基板２側とは反対側に形成されＬＥＤチップ１から放射される光を反射する光反射材料からなる上側クラッド６とを備えているので、上側クラッド６により受光部４ａへの外乱光を遮光することができ、光検出部４のＳ／Ｎ比が外乱光の影響で低下するのを抑制することができ、しかも、コア５ａから上側クラッド６へ漏れる光量を低減でき、光検出部４のＳ／Ｎ比の向上を図れる。   Further, in the light emitting device of the present embodiment, the waveguide 5 is formed on the one surface side of the mounting substrate 2 and on the opposite side of the core 5a from the mounting substrate 2 side, and radiates from the LED chip 1. Since the upper clad 6 made of a light reflecting material that reflects the reflected light is provided, the upper clad 6 can block disturbance light to the light receiving unit 4a, and the S / N ratio of the light detection unit 4 is disturbed. It is possible to suppress a decrease due to the influence of light, and to reduce the amount of light leaking from the core 5a to the upper cladding 6 and to improve the S / N ratio of the light detection unit 4.

また、本実施形態では、上側クラッド６がレンズ部３の周辺部に形成されているので、上側クラッド６を容易に形成することができる。また、本実施形態の発光装置では、光検出部４の受光部４ａが、平面視においてレンズ部３の外側に位置しているので、レンズ部３の小型化を図りながらも導波路５へＬＥＤチップ１から放射された光を入射させやすくなる。   In the present embodiment, since the upper clad 6 is formed in the peripheral portion of the lens portion 3, the upper clad 6 can be easily formed. Further, in the light emitting device of the present embodiment, the light receiving unit 4a of the light detecting unit 4 is positioned outside the lens unit 3 in plan view, so that the LED is connected to the waveguide 5 while reducing the size of the lens unit 3. It becomes easy to make the light radiated from the chip 1 enter.

また、本実施形態の発光装置では、導波路５が、実装基板２の上記一表面側において上側クラッド６との間にコア５ａを挟む形で形成されＬＥＤチップ１から放射される光を反射する光反射材料からなる下側クラッド２９を備えているので、コア５ａから下側クラッド２９へ漏れる光量を低減でき、光検出部４のＳ／Ｎ比の向上を図れる。   In the light emitting device of this embodiment, the waveguide 5 is formed so as to sandwich the core 5 a between the upper surface clad 6 on the one surface side of the mounting substrate 2, and reflects light emitted from the LED chip 1. Since the lower clad 29 made of the light reflecting material is provided, the amount of light leaking from the core 5a to the lower clad 29 can be reduced, and the S / N ratio of the light detection unit 4 can be improved.

また、本実施形態の発光装置は、実装基板２に光検出部４が設けられているので、例えば、ＬＥＤチップ１として赤色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として緑色ＬＥＤチップを採用した発光装置と、ＬＥＤチップ１として青色ＬＥＤチップを採用した発光装置とを同一の配線基板（回路基板）上に近接して配置して、当該配線基板に各発光装置のＬＥＤチップ１を駆動する駆動回路部と、各光検出部４の出力がそれぞれの目標値に保たれるように駆動回路部から各発光色のＬＥＤチップ１に流れる電流をフィードバック制御する制御回路部などを設けておくことにより、各光検出部４それぞれの出力に基づいて各発光色のＬＥＤチップ１の光出力を各別に制御することができ、各発光色ごとのＬＥＤチップ１の光出力の経時変化の違いなどによらず混色光（ここでは、白色光）の光色や色温度の精度を向上することができる。要するに、所望の混色光を安定して得ることができる。   In the light emitting device of this embodiment, since the light detection unit 4 is provided on the mounting substrate 2, for example, a light emitting device using a red LED chip as the LED chip 1 and a green LED chip as the LED chip 1 are used. The light emitting device and the light emitting device adopting the blue LED chip as the LED chip 1 are arranged close to each other on the same wiring board (circuit board), and the LED chip 1 of each light emitting apparatus is driven on the wiring board. Provide a drive circuit unit and a control circuit unit that feedback-controls the current flowing from the drive circuit unit to the LED chip 1 of each emission color so that the output of each light detection unit 4 is maintained at the respective target value. Thus, the light output of the LED chip 1 of each emission color can be controlled separately based on the output of each light detection unit 4, and the light output of the LED chip 1 for each emission color can be controlled. Time change difference etc. depending not mixed color light (in this case, white light) can be improved accuracy of the light color and color temperature. In short, desired mixed color light can be stably obtained.

（実施形態２）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図２に示すように、実装基板２の上記一表面側に、シリコン基板６０ａを用いて形成され上側クラッド６が設けられた導波路形成用基板６０を接合してある点などが相違する。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 2)
The basic configuration of the light emitting device of this embodiment is substantially the same as that of the first embodiment. As shown in FIG. 2, the upper clad 6 is provided on the one surface side of the mounting substrate 2 using the silicon substrate 60a. The difference is that the waveguide forming substrate 60 is bonded. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

導波路形成用基板６０は、主表面である一表面が(１００)面のシリコン基板６０ａにＬＥＤチップ１を露出させる開口窓６２が形成されるとともに、シリコン基板６０ａの一表面側（図２（ａ）の下面側）における開口窓６２の周部に導波路形成用凹部６１が形成されており、導波路形成用凹部６１の内底面に、上述の上側クラッド６が形成されている。   The waveguide forming substrate 60 is formed with an opening window 62 for exposing the LED chip 1 on the silicon substrate 60a whose main surface is the (100) surface, and one surface side of the silicon substrate 60a (FIG. 2 ( A waveguide forming recess 61 is formed in the peripheral portion of the opening window 62 on the lower surface side of a), and the above-described upper cladding 6 is formed on the inner bottom surface of the waveguide forming recess 61.

また、シリコン基板６０ａの上記一表面側には、シリコン酸化膜からなる絶縁膜６３が形成されており、当該絶縁膜６３上に、それぞれ導体パターン２５ｃ，２５ｄと接合される導体パターン６５ｃ，６５ｄが形成されている。ここにおいて、各導体パターン６５ｃ，６ｄは、絶縁膜６３上に形成されたＴｉ膜と当該Ｔｉ膜上に形成されたＡｕ膜との積層膜により構成されており、同時に形成されている。なお、本実施形態では、絶縁膜６３上のＴｉ膜の膜厚を１５〜５０ｎｍ、Ｔｉ膜上のＡｕ膜の膜厚を５００ｎｍに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Ａｕ膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Ａｕ膜と絶縁膜６３との間に密着性改善用の密着層としてＴｉ膜を介在させてあるが、密着層の材料はＴｉに限らず、例えば、Ｃｒ、Ｎｂ、Ｚｒ、ＴｉＮ、ＴａＮなどでもよい。   Further, an insulating film 63 made of a silicon oxide film is formed on the one surface side of the silicon substrate 60a, and conductor patterns 65c and 65d joined to the conductor patterns 25c and 25d, respectively, on the insulating film 63. Is formed. Here, each of the conductor patterns 65c and 6d is composed of a laminated film of a Ti film formed on the insulating film 63 and an Au film formed on the Ti film, and is formed at the same time. In this embodiment, the thickness of the Ti film on the insulating film 63 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 63, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used.

本実施形態の発光装置では、実装基板２と導波路形成用基板６０とを接合してから、レンズ部３を形成する際に上側クラッド６と下側クラッド２９との間に介在するコア５ａを形成している。   In the light emitting device of the present embodiment, the core 5a interposed between the upper clad 6 and the lower clad 29 is formed when the lens portion 3 is formed after the mounting substrate 2 and the waveguide forming substrate 60 are joined. Forming.

実装基板２と導波路形成用基板６０とを接合する接合工程では、接合前に互いの接合表面へアルゴンのプラズマ若しくはイオンビーム若しくは原子ビームを真空中で照射して各接合表面の清浄化・活性化を行ってから、接合表面同士を接触させ、常温下で直接接合する常温接合法を採用しているが、常温接合法に限らず、加熱圧接法や、ＡｕＳｎや半田などの低融点共晶材料を用いた接合法を採用してもよい。ここで、導波路形成用基板６０側の導体パターン６５ｃ，６５ｄと実装基板２０側の導体パターン２５ｃ，２５ｄとの接合部位を、貫通孔配線２４に重なる領域からずらしておけば、導体パターン６５ｃ，６５ｄと導体パターン２５ｃ，２５ｄとの互いの接合面の平坦度を高めることができ、特に常温接合法により接合する際の接合歩留まりを高めることができるとともに接合信頼性を高めることができる。   In the bonding process of bonding the mounting substrate 2 and the waveguide forming substrate 60, the bonding surfaces are cleaned and activated by irradiating the bonding surfaces with argon plasma, ion beam or atomic beam in vacuum before bonding. After bonding, the room-temperature bonding method is used, in which the bonding surfaces are brought into contact with each other and directly bonded at room temperature. However, not only the room-temperature bonding method, but also the heat-pressure welding method or a low melting point eutectic such as AuSn or solder. A joining method using materials may be employed. Here, if the joint portions of the conductor patterns 65c, 65d on the waveguide forming substrate 60 side and the conductor patterns 25c, 25d on the mounting substrate 20 side are shifted from the region overlapping the through-hole wiring 24, the conductor patterns 65c, The flatness of the joint surfaces of 65d and the conductor patterns 25c and 25d can be increased, and in particular, the bonding yield when bonding by the room temperature bonding method can be increased and the bonding reliability can be increased.

ところで、図１に示した構成を有する実施形態１の発光装置では、レンズ部３を形成した後で上側クラッド６を形成することとなるので、シャドーマスクなどを利用して蒸着法などにより上側クラッド６を形成する際に、レンズ部３の表面（光出射面）に上側クラッド６の材料である光反射材料が付着してしまい、レンズ部３に付着した不要部が、ＬＥＤチップ１を発光させた場合に影が発生する原因や、光取り出し効率が低下する原因になってしまうことも考えられる。   By the way, in the light emitting device of Embodiment 1 having the configuration shown in FIG. 1, the upper cladding 6 is formed after the lens portion 3 is formed. Therefore, the upper cladding is formed by vapor deposition using a shadow mask or the like. 6 is formed, the light reflecting material, which is the material of the upper cladding 6, adheres to the surface (light emitting surface) of the lens portion 3, and the unnecessary portion attached to the lens portion 3 causes the LED chip 1 to emit light. It is also conceivable that shadows may be generated in the case of light emission, and light extraction efficiency may be reduced.

これに対して、本実施形態の発光装置では、実装基板２の上記一表面側に下側クラッド２９を形成してから、上側クラッド６を形成したシリコン基板６０ａを実装基板２の上記一表面側に接合し、その後、レンズ部３を形成するとともにレンズ部３と連続したコア５ａを形成する製造プロセスを採用することができるので、上側クラッド６の形成時にレンズ部３の表面に上側クラッド６の材料である光反射材料が付着するのを防止することができる。   On the other hand, in the light emitting device of this embodiment, the lower clad 29 is formed on the one surface side of the mounting substrate 2 and then the silicon substrate 60a on which the upper clad 6 is formed is used on the one surface side of the mounting substrate 2. Then, a manufacturing process of forming the lens portion 3 and forming the core 5a continuous with the lens portion 3 can be employed. Therefore, the upper cladding 6 is formed on the surface of the lens portion 3 when the upper cladding 6 is formed. It is possible to prevent the light reflecting material as the material from adhering.

（実施形態３）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図３に示すように、レンズ部３の周部に導波路５が一体に形成されている点などが相違する。なお、実施形態２と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 3)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment, and is different in that a waveguide 5 is integrally formed on the periphery of the lens unit 3 as shown in FIG. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

本実施形態の発光装置における導波路５は、厚み方向（図３（ａ）における左右方向）の一面側のクラッドが空気により構成され、他面側のクラッドがレンズ部３により構成されている。しかして、本実施形態の発光装置では、導波路５に入射した光の一部が導波路５と空気との界面と、導波路５とレンズ部３との界面とで、交互に反射され光検出部４の受光部４ａに導光される。   In the waveguide 5 in the light emitting device of the present embodiment, the clad on one surface side in the thickness direction (the left-right direction in FIG. 3A) is composed of air, and the clad on the other surface side is composed of the lens unit 3. Thus, in the light emitting device according to the present embodiment, a part of the light incident on the waveguide 5 is alternately reflected at the interface between the waveguide 5 and air and the interface between the waveguide 5 and the lens unit 3. The light is guided to the light receiving unit 4a of the detecting unit 4.

以上説明した本実施形態の発光装置は、実施形態１と同様、実装基板２が１枚の半導体基板であるシリコン基板２０ａを用いて形成されるとともに、光検出部４においてＬＥＤチップ１からの光を受光する受光部４ａが実装基板２の上記一表面側においてＬＥＤチップ１の側方に形成されており、実装基板２の上記一表面側においてＬＥＤチップ１の真上でない位置に、ＬＥＤチップ１から放射された光の一部を反射の繰り返しにより受光部４ａの受光面へ導光する導波路５が設けられているので、ＬＥＤチップ１から放射される光の一部を検出する光検出部４を実装基板２に一体に設けた構成を採用しながらも、実装基板２を１枚のシリコン基板２０ａを用いて形成できて構造の簡略化を図れ、且つ、ＬＥＤチップ１から放射される光の一部を反射の繰り返しにより光検出部４の受光部４ａへ導光する導波路５が設けられていることで、ＬＥＤチップ１から放射された光を１回の反射で受光部４ａへ入射させる場合に比べて、受光部４ａに到達するまでの光減衰量を低減できて光検出部４のＳ／Ｎ比の向上を図れる。また、本実施形態の発光装置では、導波路５がレンズ部３の頂部から外周縁部に向かう方向に沿って形成されているので、実施形態１に比べて導波路５への入射光量を増加させることが可能となる。   In the light emitting device of the present embodiment described above, the mounting substrate 2 is formed using the silicon substrate 20a which is a single semiconductor substrate, and the light from the LED chip 1 is detected by the light detection unit 4 as in the first embodiment. The light receiving portion 4a that receives light is formed on the one surface side of the mounting substrate 2 to the side of the LED chip 1, and the LED chip 1 is not positioned directly above the LED chip 1 on the one surface side of the mounting substrate 2. Since the waveguide 5 for guiding a part of the light emitted from the LED chip 1 to the light receiving surface of the light receiving part 4a by repetition of reflection is provided, the light detecting part for detecting a part of the light emitted from the LED chip 1 4 is integrated with the mounting substrate 2, but the mounting substrate 2 can be formed by using one silicon substrate 20a, the structure can be simplified, and the light emitted from the LED chip 1 can be obtained. One When the waveguide 5 that guides light to the light receiving unit 4a of the light detecting unit 4 by repeating reflection is provided, the light emitted from the LED chip 1 is incident on the light receiving unit 4a by one reflection. In comparison, the amount of light attenuation until reaching the light receiving unit 4a can be reduced, and the S / N ratio of the light detecting unit 4 can be improved. Further, in the light emitting device of this embodiment, the waveguide 5 is formed along the direction from the top of the lens portion 3 toward the outer peripheral edge, so that the amount of light incident on the waveguide 5 is increased compared to the first embodiment. It becomes possible to make it.

ところで、本実施形態では、レンズ部３に導波路５を一体に形成してあるが、レンズ部３に導波路５を設けない構成も考えられる。しかしながら、この場合には、レンズ部３の屈折率と受光部４ａ上の絶縁膜２３との屈折率差に起因して受光部４ａの受光効率が低くなってしまうことが考えられる。そこで、図４に示す参考例のように、レンズ部３と絶縁膜２３との中間の屈折率を有する透光性材料からなる蒲鉾状の中間屈折率部７をレンズ部３の周部の全周に亘って設けるようにすれば、受光部４ａの受光効率を向上できる。なお、中間屈折率部７の形状は特に限定するものではない。   By the way, in this embodiment, although the waveguide 5 is integrally formed in the lens part 3, the structure which does not provide the waveguide 5 in the lens part 3 is also considered. However, in this case, it is conceivable that the light receiving efficiency of the light receiving portion 4a is lowered due to the difference in the refractive index between the lens portion 3 and the insulating film 23 on the light receiving portion 4a. Therefore, as in the reference example shown in FIG. 4, the bowl-shaped intermediate refractive index portion 7 made of a translucent material having an intermediate refractive index between the lens portion 3 and the insulating film 23 is formed on the entire periphery of the lens portion 3. If it is provided over the circumference, the light receiving efficiency of the light receiving portion 4a can be improved. The shape of the intermediate refractive index portion 7 is not particularly limited.

（実施形態４）
本実施形態の発光装置の基本構成は実施形態３と略同じであって、図５に示すように、レンズ部３がドーム状に形成され、レンズ部３の光入射面の一部に導波路５が設けられている点などが相違する。なお、実施形態３と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 4)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment. As shown in FIG. 5, the lens unit 3 is formed in a dome shape, and a waveguide is formed on a part of the light incident surface of the lens unit 3. 5 is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

本実施形態の発光装置における導波路５は、厚み方向（図５（ａ）における左右方向）の一面側のクラッドがレンズ部３により構成され、他面側のクラッドがレンズ部３と実装基板２とで囲まれた空間の媒質（例えば、空気など）により構成されている。しかして、本実施形態の発光装置では、導波路５に入射した光の一部が導波路５とレンズ部３との界面と、導波路５と上記媒質との界面とで、交互に反射され光検出部４の受光部４ａに導光される。   In the waveguide 5 in the light emitting device of the present embodiment, the clad on one surface side in the thickness direction (the left-right direction in FIG. 5A) is configured by the lens unit 3, and the clad on the other surface side is the lens unit 3 and the mounting substrate 2. And a medium (for example, air) surrounded by a space. Thus, in the light emitting device of this embodiment, a part of the light incident on the waveguide 5 is reflected alternately at the interface between the waveguide 5 and the lens unit 3 and at the interface between the waveguide 5 and the medium. The light is guided to the light receiving unit 4 a of the light detecting unit 4.

ところで、レンズ部３は、上述のようにドーム状に形成されており、実装基板２側の端縁（開口縁）が、ＬＥＤチップ１を実装した実装基板２の上記一表面側に固着されている。しかして、本実施形態の発光装置の製造時には、実装基板２にＬＥＤチップ１を実装した後、あらかじめ導波路５を光入射面の一部に形成したレンズ部３を実装基板２に固着すればよい。   By the way, the lens part 3 is formed in the dome shape as described above, and the end edge (opening edge) on the mounting substrate 2 side is fixed to the one surface side of the mounting substrate 2 on which the LED chip 1 is mounted. Yes. Thus, when the light emitting device of the present embodiment is manufactured, after the LED chip 1 is mounted on the mounting substrate 2, the lens unit 3 in which the waveguide 5 is previously formed on a part of the light incident surface is fixed to the mounting substrate 2. Good.

本実施形態の発光装置は、導波路５がレンズ部３の光入射面の一部に設けられているので、実施形態３のようにレンズ部３の周部に導波路５を形成する場合に比べて、導波路５を容易に形成することが可能となる。なお、導波路５は、光ファイバにより構成してもよい。   In the light emitting device of the present embodiment, since the waveguide 5 is provided on a part of the light incident surface of the lens unit 3, when the waveguide 5 is formed around the lens unit 3 as in the third embodiment. In comparison, the waveguide 5 can be easily formed. In addition, you may comprise the waveguide 5 with an optical fiber.

（実施形態５）
本実施形態の発光装置の基本構成は実施形態３と略同じであって、図６に示すように、レンズ部３の光出射面の一部に導波路５が設けられている点などが相違する。なお、実施形態３と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 5)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the third embodiment, and is different in that a waveguide 5 is provided on a part of the light emitting surface of the lens unit 3 as shown in FIG. To do. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 3, and description is abbreviate | omitted.

本実施形態の発光装置は、導波路５がレンズ部３の光出射面の一部に設けられているので、実施形態３のようにレンズ部３の周部に導波路５を形成する場合に比べて、導波路５を容易に形成することが可能となる。   In the light emitting device of the present embodiment, since the waveguide 5 is provided on a part of the light emitting surface of the lens unit 3, when the waveguide 5 is formed around the lens unit 3 as in the third embodiment. In comparison, the waveguide 5 can be easily formed.

また、本実施形態の発光装置では、実施形態１と同様、光検出部４の受光部４ａが、平面視においてレンズ部３の外側に位置しているので、レンズ部３の小型化を図りながらも導波路５へＬＥＤチップ１から放射された光を入射させやすくなり、しかも、受光部４ａの直上に導波路５が形成されているので、導波路５を導波した光が受光部４ａに入射しやすくなる。また、本実施形態の発光装置では、導波路５がレンズ部３の頂部から外周縁部に向かう方向に沿って形成されているので、実施形態１に比べて導波路５への入射光量を増加させることが可能となるとともに、実装基板２の平面サイズの小型化を図れる。なお、導波路５は、光ファイバにより構成してもよい。   Further, in the light emitting device according to the present embodiment, as in the first embodiment, the light receiving unit 4a of the light detection unit 4 is located outside the lens unit 3 in plan view, so that the lens unit 3 can be reduced in size. In addition, the light emitted from the LED chip 1 is easily incident on the waveguide 5, and the waveguide 5 is formed immediately above the light receiving portion 4 a, so that the light guided through the waveguide 5 enters the light receiving portion 4 a. Incidence becomes easy. Further, in the light emitting device of this embodiment, the waveguide 5 is formed along the direction from the top of the lens portion 3 toward the outer peripheral edge, so that the amount of light incident on the waveguide 5 is increased compared to the first embodiment. It is possible to reduce the planar size of the mounting substrate 2. In addition, you may comprise the waveguide 5 with an optical fiber.

（実施形態６）
本実施形態の発光装置の基本構成は実施形態１と略同じであって、図７に示すように、導波路５のコア５ａが上側クラッド６と実装基板２の絶縁膜２３との間に介在する形で形成され、コア５ａの材料がレンズ部３とは異なる透光性材料により形成されている点が相違する。要するに、本実施形態では、絶縁膜２３が下側クラッドを兼ねている。なお、実施形態１と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 6)
The basic configuration of the light emitting device of this embodiment is substantially the same as that of the first embodiment, and the core 5a of the waveguide 5 is interposed between the upper cladding 6 and the insulating film 23 of the mounting substrate 2 as shown in FIG. The difference is that the material of the core 5a is formed of a translucent material different from that of the lens portion 3. In short, in this embodiment, the insulating film 23 also serves as the lower clad. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態の発光装置においても、実施形態１と同様、ＬＥＤチップ１から放射される光の一部を検出する光検出部４を実装基板２に一体に設けた構成を採用しながらも、実装基板２を１枚のシリコン基板２０ａを用いて形成できて構造の簡略化を図れ、且つ、ＬＥＤチップ１から放射される光の一部を反射の繰り返しにより光検出部４の受光部４ａへ導光する導波路５が設けられていることで、ＬＥＤチップ１から放射された光を１回の反射で受光部４ａへ入射させる場合に比べて、受光部４ａに到達するまでの光減衰量を低減できて光検出部４のＳ／Ｎ比の向上を図れる。   Even in the light emitting device of the present embodiment, as in the first embodiment, the light detection unit 4 that detects a part of the light emitted from the LED chip 1 is mounted on the mounting substrate 2 while being integrated. The substrate 2 can be formed by using a single silicon substrate 20a to simplify the structure, and a part of the light emitted from the LED chip 1 is guided to the light receiving portion 4a of the light detecting portion 4 by repeated reflection. By providing the light waveguide 5, the amount of light attenuation until reaching the light receiving unit 4 a is reduced as compared with the case where the light emitted from the LED chip 1 is incident on the light receiving unit 4 a by one reflection. Thus, the S / N ratio of the light detection unit 4 can be improved.

（実施形態７）
本実施形態の発光装置の基本構成は実施形態６と略同じであり、図８に示すように、ＬＥＤチップ１の形状や実装基板２への実装構造などが相違する。なお、実施形態６と同様の構成要素には同一の符号を付して説明を省略する。 (Embodiment 7)
The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the sixth embodiment, and the shape of the LED chip 1 and the mounting structure on the mounting substrate 2 are different as shown in FIG. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 6, and description is abbreviate | omitted.

本実施形態におけるＬＥＤチップ１は、青色光を放射するＧａＮ系の青色ＬＥＤチップであり、それぞれ窒化物半導体材料により形成されたｎ形窒化物半導体層１４と発光層１５とｐ形窒化物半導体層１６との積層構造を有するＬＥＤ薄膜部１２、ｎ形窒化物半導体層１４に電気的に接続されたカソード電極１８およびｐ形窒化物半導体層１６に電気的に接続されたアノード電極１７がｎ形のＺｎＯ結晶からなる六角錘状の錐体１１の下面１１ａ側に形成されている。   The LED chip 1 in the present embodiment is a GaN-based blue LED chip that emits blue light. The n-type nitride semiconductor layer 14, the light emitting layer 15, and the p-type nitride semiconductor layer are each formed of a nitride semiconductor material. LED thin film portion 12 having a laminated structure with LED 16, cathode electrode 18 electrically connected to n-type nitride semiconductor layer 14, and anode electrode 17 electrically connected to p-type nitride semiconductor layer 16 are n-type. It is formed on the lower surface 11a side of the hexagonal pyramid cone 11 made of ZnO crystal.

ＬＥＤチップ１のＬＥＤ薄膜部１２は、ｎ形窒化物半導体層１４をｎ形ＧａＮ層により構成し、発光層１５をＩｎＧａＮ層により構成し、ｐ形窒化物半導体層１６を発光層１５側のｐ形ＡｌＧａＮ層と当該ｐ形ＡｌＧａＮ層における発光層１５側とは反対側のｐ形ＧａＮ層とで構成してあるが、ＬＥＤ薄膜部１２の積層構造は特に限定するものではなく、発光層１５は単層構造に限らず、多重量子井戸構造ないし単一量子井戸構造でもよい。   In the LED thin film portion 12 of the LED chip 1, the n-type nitride semiconductor layer 14 is composed of an n-type GaN layer, the light emitting layer 15 is composed of an InGaN layer, and the p-type nitride semiconductor layer 16 is composed of p on the light emitting layer 15 side. The p-type AlGaN layer and the p-type GaN layer on the side opposite to the light-emitting layer 15 side of the p-type AlGaN layer are configured, but the laminated structure of the LED thin film portion 12 is not particularly limited. It is not limited to a single layer structure, and may be a multiple quantum well structure or a single quantum well structure.

また、ＬＥＤチップ１は、ＬＥＤ薄膜部１２の平面視形状を錐体１１の下面１１ａよりもやや小さな正六角形状の形状に形成してあり、カソード電極１８が、ＬＥＤ薄膜部１２のｎ形窒化物半導体層１４に接する形で形成されて当該ｎ形窒化物半導体層１４と電気的に接続され、アノード電極１７が錐体１１の下面１１ａに接する形で形成され当該錐体１１を介してｐ形窒化物半導体層１６と電気的に接続されている。したがって、ｎ形窒化物半導体層１４と発光層１５とｐ形窒化物半導体層１６との平面サイズを同じにすることができる。ここで、ＬＥＤチップ１のアノード電極１７およびカソード電極１８は、下層側のＴｉ膜と上層側のＡｕ膜との積層膜により構成されている。ただし、アノード電極１７およびカソード電極１８それぞれの形状、サイズ、個数および配置は特に限定するものではない。   In addition, the LED chip 1 has a shape of the LED thin film portion 12 in a plan view that is slightly smaller than the lower surface 11 a of the cone 11, and the cathode electrode 18 is the n-type nitriding of the LED thin film portion 12. Formed in contact with the n-type nitride semiconductor layer 14 and electrically connected to the n-type nitride semiconductor layer 14. The anode electrode 17 is formed in contact with the lower surface 11 a of the cone 11. The nitride semiconductor layer 16 is electrically connected. Accordingly, the n-type nitride semiconductor layer 14, the light emitting layer 15, and the p-type nitride semiconductor layer 16 can have the same planar size. Here, the anode electrode 17 and the cathode electrode 18 of the LED chip 1 are formed of a laminated film of a lower layer side Ti film and an upper layer side Au film. However, the shape, size, number and arrangement of the anode electrode 17 and the cathode electrode 18 are not particularly limited.

上述のＬＥＤチップ１は、主表面がｃ面のサファイアウェハの主表面側に上記積層構造を有するＬＥＤ薄膜部１２をエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長し、その後、ＬＥＤ薄膜部１２を錐体１１の基礎となるｎ形ＺｎＯウェハに接合してから、サファイアウェハを除去し、続いて、塩酸系のエッチング液（例えば、塩酸水溶液など）を用いてエッチング速度の結晶方位依存性を利用した異方性エッチングを行うことによりｎ形ＺｎＯウェハの一部からなる六角錘状の錐体１１を形成している。なお、ｎ形ＺｎＯウェハとしては、水熱合成法を利用して製造したものを用いている。六角錘状の錐体１１の高さは、ｎ形ＺｎＯウェハの厚さで規定することができ、本実施形態では、ｎ形ＺｎＯウェハとして厚さが５００μｍのものを用いているので、錐体１１の高さは５００μｍとなっているが、ｎ形ＺｎＯウェハの厚さは特に限定するものではない。また、錐体１１の下面１１ａに対する各斜面１１ｂそれぞれの傾斜角は、ｎ形ＺｎＯウェハの結晶軸方向で規定され、ｎ形ＺｎＯウェハにおいて錐体１１の下面１１ａとなるＺｎ極性面である（０００１）面とは反対側のＯ極性面である（０００−１）面に適宜パターニングされたマスクを設けてｎ形ＺｎＯウェハをＯ極性面側から異方性エッチングすることにより錐体１１を形成しているので、下面１１ａに対する各斜面１１ｂそれぞれの傾斜角が６０°となっている。また、上記マスクのサイズを適宜設定すれば、錐体１１を、六角錘の頂部を切り欠いた六角錘状の形状（六角錘台状の形状）とすることもできる。   In the LED chip 1 described above, the LED thin film portion 12 having the above laminated structure is grown on the main surface side of the sapphire wafer whose main surface is c-plane by the epitaxial growth method (for example, MOVPE method), and then the LED thin film portion 12 is formed. After bonding to the n-type ZnO wafer that forms the basis of the cone 11, the sapphire wafer is removed, and then the crystal orientation dependence of the etching rate is utilized using a hydrochloric acid-based etching solution (for example, hydrochloric acid aqueous solution). By performing the anisotropic etching, the hexagonal pyramid-shaped cone 11 made of a part of the n-type ZnO wafer is formed. In addition, as an n-type ZnO wafer, what was manufactured using the hydrothermal synthesis method is used. The height of the hexagonal pyramidal cone 11 can be defined by the thickness of the n-type ZnO wafer. In this embodiment, the n-type ZnO wafer having a thickness of 500 μm is used. Although the height of 11 is 500 μm, the thickness of the n-type ZnO wafer is not particularly limited. In addition, the inclination angle of each inclined surface 11b with respect to the lower surface 11a of the cone 11 is defined in the crystal axis direction of the n-type ZnO wafer, and is a Zn polar surface that becomes the lower surface 11a of the cone 11 in the n-type ZnO wafer (0001). The cone 11 is formed by anisotropically etching the n-type ZnO wafer from the O-polar surface side by providing a mask that is appropriately patterned on the (000-1) surface that is the O-polar surface opposite to the surface). Therefore, the inclination angle of each inclined surface 11b with respect to the lower surface 11a is 60 °. If the size of the mask is appropriately set, the cone 11 can be formed in a hexagonal pyramid shape (hexagonal frustum shape) with the top of the hexagonal pyramid cut out.

また、ＬＥＤチップ１は、ＬＥＤ薄膜部１２における錐体１１側とは反対側の表面（ここでは、ｎ形窒化物半導体層１４の表面）に光取り出し効率向上用の微細凹凸構造を形成してもよい。このような微細凹凸構造を形成すれば、ＬＥＤチップ１においてＬＥＤ薄膜部１２から錐体１１側とは反対側に放射される光（ここでは、発光層１５からｎ形窒化物半導体層１４側へ放射される光）がＬＥＤ薄膜部１２の表面で反射されるのを抑制して効率良く取り出すことができ、光取り出し効率の向上を図れる。   Further, the LED chip 1 has a fine uneven structure for improving light extraction efficiency formed on the surface of the LED thin film portion 12 opposite to the cone 11 side (here, the surface of the n-type nitride semiconductor layer 14). Also good. If such a fine concavo-convex structure is formed, light emitted from the LED thin film portion 12 to the side opposite to the cone 11 side in the LED chip 1 (here, from the light emitting layer 15 to the n-type nitride semiconductor layer 14 side). (Emitted light) can be efficiently extracted by suppressing the reflection on the surface of the LED thin film portion 12, and the light extraction efficiency can be improved.

上述のＬＥＤチップ１は、アノード電極１７とカソード電極１８との間に順方向バイアス電圧を印加することにより、トンネル電流注入によりアノード電極１７からｐ形窒化物半導体層１６へホールが注入されるとともに、カソード電極１８からｎ形窒化物半導体層１４へ電子が注入され、発光層１５に注入された電子とホールとが再結合することで発光し、錐体１１の各斜面１１ｂおよびＬＥＤ薄膜部１２におけるｎ形窒化物半導体層１４の錐体１１側とは反対側の表面から光が放射される。なお、波長が４５０ｎｍの光に対するＺｎＯの屈折率は２．１、ＧａＮの屈折率は２．４である。   In the LED chip 1 described above, by applying a forward bias voltage between the anode electrode 17 and the cathode electrode 18, holes are injected from the anode electrode 17 into the p-type nitride semiconductor layer 16 by tunnel current injection. Then, electrons are injected from the cathode electrode 18 into the n-type nitride semiconductor layer 14, and the electrons and holes injected into the light emitting layer 15 recombine to emit light, and each inclined surface 11 b of the cone 11 and the LED thin film portion 12. Light is emitted from the surface opposite to the cone 11 side of the n-type nitride semiconductor layer 14 in FIG. Note that the refractive index of ZnO for light having a wavelength of 450 nm is 2.1, and the refractive index of GaN is 2.4.

以上説明したＬＥＤチップ１は、錐体１１よりもＬＥＤ薄膜部１２が実装基板２の上記一表面に近くなる形で実装基板２に実装されている。   The LED chip 1 described above is mounted on the mounting substrate 2 such that the LED thin film portion 12 is closer to the one surface of the mounting substrate 2 than the cone 11.

ここにおいて、導波路５は、ＬＥＤチップ１における錐体１１の斜面１１ｂから放射される光の一部や、ＬＥＤ薄膜部１２から実装基板２の上記一表面側へ放射されて反射された光の一部が入射するようにコア５ａの厚み寸法を設定してある。   Here, the waveguide 5 is a part of the light emitted from the inclined surface 11 b of the cone 11 in the LED chip 1 or the light reflected from the LED thin film portion 12 emitted to the one surface side of the mounting substrate 2. The thickness dimension of the core 5a is set so that a part of the light enters.

また、実装基板２は、シリコン基板２０ａの上記一表面側の導体パターン２５ａ，２５ｂそれぞれにＬＥＤチップ１のカソード電極１８、アノード電極１７がバンプ８０を介して接合されて電気的に接続されている。ここにおいて、本実施形態におけるＬＥＤチップ１はカソード電極１８を複数設けてあるので、実装基板２との間の熱抵抗を低減でき、放熱性を向上させることができる。なお、各バンプ８０の材料としてはＡｕを採用しているが、これに限らず、例えば、半田を採用してもよい。   The mounting substrate 2 is electrically connected by bonding the cathode electrode 18 and the anode electrode 17 of the LED chip 1 via the bumps 80 to the conductor patterns 25a and 25b on the one surface side of the silicon substrate 20a. . Here, since the LED chip 1 in the present embodiment is provided with a plurality of cathode electrodes 18, the thermal resistance between the LED chip 1 and the mounting substrate 2 can be reduced, and the heat dissipation can be improved. In addition, although Au is employ | adopted as a material of each bump 80, it is not restricted to this, For example, you may employ | adopt solder.

以上説明した本実施形態の発光装置では、ＬＥＤチップ１として、ＬＥＤ薄膜部１２、カソード電極１８およびアノード電極１７がＺｎＯ結晶からなる六角錘状の錐体１１の下面１１ａ側に形成されたものを用い、実装基板２には、ＬＥＤチップ１のカソード電極１８およびアノード電極１７それぞれとバンプ８０，８０を介して接合される導体パターン２５ｂ，２５ａが形成されているので、ＬＥＤチップ１から実装基板２側へ放射された光の一部を実装基板２の上記一表面側で反射させることが可能となり、ＬＥＤチップ１からの光が導波路５へ入射しやすくなる。なお、本実施形態では、ＬＥＤチップ１から実装基板２側へ放射された光が導体パターン２５ａ，２５ｂにより反射されるが、実装基板２の上記一表面側に、ＬＥＤチップ１から放射された光を反射する反射膜を設けてもよい。この場合、上記反射膜の材料として導体パターン２５ａ，２５ｂよりもＬＥＤチップ１からの光に対する反射率の高い材料を採用することによって、光検出部４の受光部４ａの受光量を増加させることが可能となる。   In the light emitting device of the present embodiment described above, the LED chip 1 in which the LED thin film portion 12, the cathode electrode 18 and the anode electrode 17 are formed on the lower surface 11a side of the hexagonal pyramid cone 11 made of ZnO crystal. Since the mounting substrate 2 is formed with conductor patterns 25b and 25a bonded to the cathode electrode 18 and the anode electrode 17 of the LED chip 1 via the bumps 80 and 80, respectively, the LED chip 1 is mounted on the mounting substrate 2 Part of the light radiated to the side can be reflected on the one surface side of the mounting substrate 2, and the light from the LED chip 1 can easily enter the waveguide 5. In this embodiment, the light emitted from the LED chip 1 toward the mounting substrate 2 is reflected by the conductor patterns 25a and 25b, but the light emitted from the LED chip 1 on the one surface side of the mounting substrate 2 is reflected. A reflective film that reflects the light may be provided. In this case, the amount of light received by the light receiving unit 4a of the light detecting unit 4 can be increased by adopting a material having a higher reflectance with respect to the light from the LED chip 1 than the conductor patterns 25a and 25b as the material of the reflective film. It becomes possible.

ところで、上記各実施形態の発光装置において、例えば、ＬＥＤチップ１として青色の光を放射するＬＥＤチップを用い、ＬＥＤチップ１から放射される光によって励起されてＬＥＤチップ１よりも長波長の光を放射する蛍光体を含有した透光性材料（例えば、シリコーン樹脂、アクリル樹脂、エポキシ樹脂、ポリカーボネート樹脂、ガラス、有機成分と無機成分とがｎｍレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料など）により形成され実装基板２との間にレンズ部３を囲む形で配置される蛍光体キャップを設けてもよい。ここにおいて、上述の蛍光体として、ＬＥＤチップ１から放射された青色の光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を採用すれば、ＬＥＤチップ１から放射された青色の光と黄色蛍光体から放射された光とが上記蛍光体キャップから出射されることとなり、白色光を得ることができる。なお、上記蛍光体キャップの透光性材料としてガラスを採用すれば、シリコーン樹脂などの有機材料を採用している場合に比べて、上記蛍光体キャップの熱伝導性が向上するので、蛍光体の温度上昇を抑制できて光束を向上させることができ、しかも、水蒸気やＮＯｘなど対するガスバリア性や耐透湿性が向上するとともに、蛍光体の吸湿劣化を抑制でき、信頼性および耐久性が向上する。また、上記蛍光体キャップの材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができ、赤色蛍光体と緑色蛍光体とを用いれば演色性を高めることができる。 By the way, in the light-emitting device of each said embodiment, the LED chip which radiates | emits blue light is used as the LED chip 1, for example, it is excited by the light radiated | emitted from the LED chip 1, and light with a longer wavelength than LED chip 1 is used. Translucent materials containing phosphors that emit (eg, silicone resin, acrylic resin, epoxy resin, polycarbonate resin, glass, organic / inorganic hybrid material in which organic and inorganic components are mixed and bonded at the nm or molecular level Etc.) and a phosphor cap disposed between the mounting substrate 2 and the lens unit 3 may be provided. Here, as the above-described phosphor, if a particulate yellow phosphor that is excited by blue light emitted from the LED chip 1 and emits broad yellow light is employed, the phosphor is emitted from the LED chip 1. The blue light and the light emitted from the yellow phosphor are emitted from the phosphor cap, and white light can be obtained. If glass is used as the translucent material of the phosphor cap, the thermal conductivity of the phosphor cap is improved compared to the case where an organic material such as silicone resin is employed. it is possible to improve the light flux can be suppressed temperature rise, moreover, with improved gas barrier properties and moisture impermeability against water vapor and NO x, can suppress moisture absorption deterioration of the phosphor, thereby improving the reliability and durability . In addition, the phosphor mixed with the translucent material used as the material of the phosphor cap is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor. If a red phosphor and a green phosphor are used, color rendering can be improved.

１ ＬＥＤチップ
２ 実装基板
３ レンズ部
４ 光検出部
４ａ 受光部
５ 導波路
５ａ コア
６ 上側クラッド（クラッド）
１１ 錐体
１１ａ 下面
１２ ＬＥＤ薄膜部
１４ ｎ形窒化物半導体層
１５ 発光層
１６ ｐ形窒化物半導体層
１７ アノード電極
１８ カソード電極
２０ａ シリコン基板（半導体基板）
２５ｃ 導体パターン
２５ｄ 導体パターン
２９ 下側クラッド
８０ バンプ DESCRIPTION OF SYMBOLS 1 LED chip 2 Mounting board 3 Lens part 4 Photodetection part 4a Light-receiving part 5 Waveguide 5a Core 6 Upper clad (cladding)
DESCRIPTION OF SYMBOLS 11 Cone 11a Lower surface 12 LED thin film part 14 N-type nitride semiconductor layer 15 Light emitting layer 16 P-type nitride semiconductor layer 17 Anode electrode 18 Cathode electrode 20a Silicon substrate (semiconductor substrate)
25c Conductor pattern 25d Conductor pattern 29 Lower clad 80 Bump

Claims (7)

ＬＥＤチップと、当該ＬＥＤチップが一表面側に実装されるとともにＬＥＤチップから放射された光を検出する光検出部が形成された実装基板とを備え、実装基板が１枚の半導体基板を用いて形成されるとともに、光検出部においてＬＥＤチップからの光を受光する受光部が実装基板の前記一表面側においてＬＥＤチップの側方に形成されてなり、実装基板の前記一表面側においてＬＥＤチップの真上でない位置に、ＬＥＤチップから放射された光の一部を反射の繰り返しにより受光部の受光面へ導光する導波路が設けられてなることを特徴とする発光装置。   An LED chip and a mounting board on which the LED chip is mounted on one surface side and a light detection unit that detects light emitted from the LED chip is formed, and the mounting board uses a single semiconductor substrate In addition, a light receiving portion that receives light from the LED chip in the light detection portion is formed on the side of the LED chip on the one surface side of the mounting substrate, and the LED chip on the one surface side of the mounting substrate. A light-emitting device characterized in that a waveguide for guiding a part of light emitted from an LED chip to a light-receiving surface of a light-receiving unit by repeated reflection is provided at a position not directly above. 前記導波路は、前記実装基板の前記一表面側に形成されたコアと、コアにおける前記実装基板側とは反対側に形成され前記ＬＥＤチップから放射される光を反射する光反射材料からなるクラッドとを備えることを特徴とする請求項１記載の発光装置。   The waveguide includes a core formed on the one surface side of the mounting substrate, and a clad made of a light reflecting material that is formed on the opposite side of the core from the mounting substrate side and reflects light emitted from the LED chip. The light-emitting device according to claim 1. 前記導波路は、前記実装基板の前記一表面側において前記クラッドからなる上側クラッドとの間に前記コアを挟む形で形成され前記ＬＥＤチップから放射される光を反射する光反射材料からなる下側クラッドを備えることを特徴とする請求項２記載の発光装置。   The waveguide is formed on the one surface side of the mounting substrate so as to sandwich the core between the clad and the upper clad, and is made of a light reflecting material that reflects light emitted from the LED chip. The light emitting device according to claim 2, further comprising a clad. 前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記クラッドは、レンズ部の周辺部に形成されてなることを特徴とする請求項２または請求項３記載の発光装置。   The lens unit is provided on the one surface side of the mounting substrate and controls light distribution of light emitted from the LED chip, and the clad is formed in a peripheral part of the lens unit. Item 4. The light-emitting device according to item 2 or 3. 前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記導波路は、レンズ部の光入射面の一部もしくは光出射面の一部に設けられてなることを特徴とする請求項１記載の発光装置。   A lens unit that is provided on the one surface side of the mounting substrate and controls light distribution of the light emitted from the LED chip, and the waveguide is a part of a light incident surface of the lens unit or a light emitting surface; The light-emitting device according to claim 1, wherein the light-emitting device is provided in a portion. 前記実装基板の前記一表面側に設けられ前記ＬＥＤチップから放射された光の配光を制御するレンズ部を備え、前記受光部は、平面視においてレンズ部の外側に位置していることを特徴とする請求項１ないし請求項４のいずれか１項に記載の発光装置。   A lens unit is provided on the one surface side of the mounting substrate and controls light distribution of light emitted from the LED chip, and the light receiving unit is located outside the lens unit in plan view. The light-emitting device according to any one of claims 1 to 4. 前記ＬＥＤチップは、ｎ形窒化物半導体層とｐ形窒化物半導体層とを有するＬＥＤ薄膜部、ｎ形窒化物半導体層に電気的に接続されたカソード電極およびｐ形窒化物半導体層に電気的に接続されたアノード電極がＺｎＯ結晶からなる六角錘状の錐体の下面側に形成されてなり、前記実装基板は、前記ＬＥＤチップのカソード電極およびアノード電極それぞれとバンプを介して接合される導体パターンが形成されてなることを特徴とする請求項１ないし請求項６のいずれか１項に記載の発光装置。   The LED chip is electrically connected to an LED thin film portion having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, a cathode electrode electrically connected to the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer. An anode electrode connected to the cathode electrode is formed on the lower surface side of a hexagonal pyramid cone made of ZnO crystal, and the mounting substrate is a conductor bonded to each of the cathode and anode electrodes of the LED chip via bumps The light-emitting device according to claim 1, wherein a pattern is formed.
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Publication number Priority date Publication date Assignee Title
JP2017005198A (en) * 2015-06-15 2017-01-05 三菱電機株式会社 Light emitting device, display unit and display device
JP2017187679A (en) * 2016-04-07 2017-10-12 ライトマックス エレクトロニクス インコーポレイテッド Automatic detection structure for backlight of liquid crystal display module
WO2022132744A1 (en) * 2020-12-15 2022-06-23 Lumileds Llc Material stack for leds with a dome

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JP2017005198A (en) * 2015-06-15 2017-01-05 三菱電機株式会社 Light emitting device, display unit and display device
JP2017187679A (en) * 2016-04-07 2017-10-12 ライトマックス エレクトロニクス インコーポレイテッド Automatic detection structure for backlight of liquid crystal display module
WO2022132744A1 (en) * 2020-12-15 2022-06-23 Lumileds Llc Material stack for leds with a dome

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