JP2005019609A - Package for light emitting diode and light emitting device using the same - Google Patents

Package for light emitting diode and light emitting device using the same Download PDF

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Publication number
JP2005019609A
JP2005019609A JP2003181182A JP2003181182A JP2005019609A JP 2005019609 A JP2005019609 A JP 2005019609A JP 2003181182 A JP2003181182 A JP 2003181182A JP 2003181182 A JP2003181182 A JP 2003181182A JP 2005019609 A JP2005019609 A JP 2005019609A
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Prior art keywords
light emitting
emitting diode
light
diode chip
chip
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JP2003181182A
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JP4114557B2 (en
Inventor
Kazunari Kuzuhara
一功 葛原
Nobuyuki Takakura
信之 高倉
Masaharu Yasuda
正治 安田
Takanori Akeda
孝典 明田
Shigenari Takami
茂成 高見
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Priority to JP2003181182A priority Critical patent/JP4114557B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for a light emitting diode which is reduced in mounting area on a mounting substrate and can increase the efficiency of taking out light outside, and also to provide a light emitting device using the same. <P>SOLUTION: The package 1 comprises a recessed portion 11 for housing a light emitting diode chip A which is formed on one face side in the thickness direction of a semiconductor silicon substrate 10. Electrodes 15a and 15b for external connection which are formed on the other face side of the silicon substrate 10, electrodes 13a and 13b for chip connection which connect the light emitting diode chip A on the inner bottom face of the recessed portion 11 for housing via gold bumps 3a and 3b, and interconnections 16a and 16b which are formed through a mounting section 12 composed of a part between the inner bottom face of the recessed portion 11 for housing and the other face of the silicon substrate 10 to connect the electrodes 13a and 13b for chip connection and the electrodes 15a and 15b for external connection. In the package 1, a reflection film 18 is formed on the internal surface of the recessed portion 11 for housing. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、発光ダイオード用パッケージおよびそれを用いた発光装置に関するものである。
【０００２】
【従来の技術】
従来から、図５に示すように、サファイア基板４１の厚み方向の一表面（図５における下面）側に、バッファ層４２、ｎ形半導体層４３、発光層４４、ｐ形半導体層４５が順次形成された発光ダイオードチップＡが知られている（例えば、特許文献１、特許文献２参照）。また、発光ダイオードチップＡは、ｎ形半導体層４３上にｎ電極（パッド）４８が設けられるとともに、ｐ形半導体層４５上に電流拡散膜４６を介してｐ電極（パッド）４７が設けられ、電流拡散膜４６が導電性を有し且つ反射率の高い金属材料により形成されており、発光層４４にて発光した光がサファイア基板４１を通して外部へ放射される。要するに、発光ダイオードチップＡは、サファイア基板４１の厚み方向の他表面（図５における上面）からなる裏面を光取り出し面として用いられる。
【０００３】
なお、図５中の矢印Ｅは、発光層４４からｎ形半導体層４３側へ放射されサファイア基板４１の光取り出し面を通して外部へ放射された光を示し、同図中の矢印Ｒは、電流拡散膜４６にて反射されサファイア基板４１の光取り出し面を通して外部へ放射された光を示し、同図中の矢印Ｌは、サファイア基板４１とバッファ層４２との界面で全反射して発光層４４に再吸収される光を示している。また、バッファ層４２、ｎ形半導体層４３、発光層４４、ｐ形半導体層４５は、それぞれ窒化ガリウム系の化合物半導体材料（例えば、ＧａＮ、ＩｎＧａＮなど）により形成されている。
【０００４】
ところで、上述の発光ダイオードチップＡを備えた発光装置としては、例えば、図６に示す構造のものや図７に示す構造のものが提案されている。
【０００５】
図６に示した構造の発光装置は、発光ダイオードチップＡと、発光ダイオードチップＡを収納したパッケージ（発光ダイオード用パッケージ）５と、パッケージ５を実装した金属基板２０とを備えている。ここにおいて、パッケージ５は、セラミック基板５０の厚み方向の一面に発光ダイオードチップＡを収納する収納凹所５１が形成され、収納凹所５１の内底面に発光ダイオードチップＡがバンプ３ａ，３ｂを介して電気的に接続されるチップ接続用電極５２ａ，５２ｂが形成されている。すなわち、発光ダイオードチップＡはパッケージ５に対してフリップチップ実装されている。また、金属基板２０は、金属板２１の一表面上に絶縁層２２が形成され、絶縁層２２上に導電パターン２３ａ，２３ｂが形成されたものであって、パッケージ５と絶縁層２２との間に半田からなる接着層５５が介在しており、導電パターン２３ａ，２３ｂがボンディングワイヤ５７ａ，５７ｂを介してチップ接続用電極５２ａ，５２ｂと電気的に接続されている。この図６に示した構造の発光装置では、発光ダイオードチップＡから放射された光が収納凹所５１内に充填された封止樹脂よりなる樹脂封止部（図示せず）を通して前面側（図６における上面側）へ取り出される。なお、収納凹所５１は内底面に近づくほど開口面積が小さくなるように開口されている。
【０００６】
また、図７に示した構造の発光装置は、発光ダイオードチップＡが金属基板２０にフリップチップ実装され、発光ダイオードチップＡを全周に亘って囲む枠状の枠部材６が接着材からなる接着層６６を介して金属基板２０に固着されている。ここにおいて、発光ダイオードチップＡは、バンプ３ａ，３ｂを介して金属基板２０の導電パターン２３ａ，２３ｂと電気的に接続されている。この図７に示した構造の発光装置では、発光ダイオードチップＡから放射された光が枠部材６の内側に充填された封止樹脂よりなる樹脂封止部（図示せず）を通して前面側（図７における上面側）へ取り出される。ここにおいて、枠部材６は、金属基板２０に近づくほど開口面積が小さくなるように開口されており、内周面に金属材料からなる反射膜６４が形成されている。したがって、図７に示した構造の発光装置では、発光ダイオードチップＡから側方へ放射された光を反射膜６４にて反射させて前面側へ取り出すことができる。
【０００７】
【特許文献１】
特開平１１−２２０１７０号公報
【特許文献２】
特開２００１−２３７４５８号公報
【０００８】
【発明が解決しようとする課題】
ところで、図６に示した構造の発光装置では、チップ接続用電極５２ａ，５２ｂにボンディングワイヤ５７ａ，５７ｂの一端部をボンディングする必要があるので、収納凹所５１の内底面の面積を比較的大きくする必要があり、しかも、パッケージ５を実装する実装基板としての金属基板２０においてボンディングワイヤ５７ａ，５７ｂの他端をボンディングするためのスペースを確保する必要があるので、金属基板２０に対するパッケージ５の実装面積が比較的大きくなってしまうという不具合があった。
【０００９】
これに対して、図７に示した構造の発光装置では、枠部材６を実装基板としての金属基板２０に接着材からなる接着層６６を介して固着する必要があり、接着材のはみ出しなどを考慮すると実装面積が比較的大きくなってしまうという不具合があった。
【００１０】
また、図６に示した構造の発光装置では、発光ダイオードチップＡから側方へ放射された光の一部がセラミック基板からなるパッケージ５に吸収されてしまい、図７に示した構造の発光装置では、発光ダイオードチップＡから側方へ放射された光の一部が接着層６６で吸収されてしまうので、いずれの発光装置においても外部への光取り出し効率の更なる向上が望まれている。
【００１１】
本発明は上記事由に鑑みて為されたものであり、請求項１および請求項２の発明の主目的は、実装基板への実装面積を小さくすることができ且つ外部への光取り出し効率を向上可能な発光ダイオード用パッケージを提供することにあり、請求項３ないし請求項６の発明の主目的は、実装基板に対する実装面積を小さくでき且つ外部への光取り出し効率を向上した発光装置を提供することにある。
【００１２】
【課題を解決するための手段】
請求項１の発明は、半導体基板の厚み方向の一面に他面に近づくほど開口面積が小さくなり発光ダイオードチップを収納する収納凹所が形成されるとともに、半導体基板の上記他面側に外部接続用電極が形成され、収納凹所の内底面にフェースダウンで対向配置される発光ダイオードチップを接続するチップ接続用電極が形成され、チップ接続用電極と外部接続用電極とを電気的に接続する配線が半導体基板における収納凹所の内底面と前記他面との間の部分からなる実装部の厚み方向に貫設され、収納凹所の内周面に金属材料からなる反射膜が形成されてなることを特徴とする。
【００１３】
この発明によれば、発光ダイオードチップを収納する収納凹所を厚み方向の一面側に形成した半導体基板の他面側に外部接続用電極を形成してあるので、実装基板への実装面積を小さくすることができ、また、収納凹所の内周面に発光ダイオードチップからの光を反射する反射膜が形成されているので、発光ダイオードチップから側方へ放射された光を反射膜により反射させて収納凹所の外部へ取り出すことが可能となり、外部への光取り出し効率を向上可能となる。
【００１４】
請求項２の発明は、前記半導体基板における前記他面に放熱用電極が形成されるとともに、前記収納凹所の内底面に放熱用金属部が形成され、放熱用金属部と放熱用電極とを熱的に結合する金属材料からなる熱結合部が前記実装部の厚み方向に貫設されてなることを特徴とする。
【００１５】
この発明によれば、前記収納凹所に収納する発光ダイオードチップを放熱用金属部と熱的に結合させることにより、前記発光ダイオードチップで発生した熱を放熱用電極を通して前記半導体基板の前記他面側から放熱させることができるので、放熱性が向上し、前記発光ダイオードチップの温度上昇を抑制でき、結果的に温度上昇に伴う前記発光ダイオードチップの発光効率の低下を抑制できる。
【００１６】
請求項３の発明は、請求項１または請求項２記載の発光ダイオード用パッケージと、裏面を光取り出し面とし発光ダイオード用パッケージの前記収納凹所内で前記実装部にフリップチップ実装された発光ダイオードチップとを備えることを特徴とする。
【００１７】
この発明によれば、発光ダイオード用パッケージの前記外部接続用電極が前記半導体基板の厚み方向における前記他面側に形成されているので、実装基板に対する発光ダイオード用パッケージの実装面積を小さくすることができ、また、発光ダイオードチップから側方へ放射された光が前記収納凹所の内周面に形成した前記反射膜で反射されて外部へ取り出されることになり、発光ダイオードチップで発光した光の外部への取り出し効率を向上させることができる。
【００１８】
請求項４の発明は、請求項２記載の発光ダイオード用パッケージと、裏面を光取出し面とし発光ダイオード用パッケージの前記収納凹所内で前記実装部にフリップチップ実装された発光ダイオードチップとを備え、発光ダイオードチップの表面に前記放熱用金属部と接続される金属電極が設けられてなることを特徴とする
この発明によれば、発光ダイオード用パッケージの前記外部接続用電極が前記半導体基板の厚み方向における前記他面側に形成されているので、実装基板に対する発光ダイオード用パッケージの実装面積を小さくすることができ、また、発光ダイオードチップから側方へ放射された光が前記収納凹所の内周面に形成した前記反射膜で反射されて外部へ取り出されることになり、発光ダイオードチップで発光した光の外部への取り出し効率を向上させることができる。しかも、発光ダイオードチップが前記半導体基板における前記他面側の前記放熱用電極と熱的に結合されているので、発光ダイオードチップで発生した熱を前記半導体基板における前記他面側の放熱用電極を通して放熱させることができ、放熱性が向上する。
【００１９】
請求項５の発明は、請求項４の発明において、前記発光ダイオードチップと前記チップ接続用電極との電気的な接続に金バンプを用いてなることを特徴とする。
【００２０】
この発明によれば、前記発光ダイオードチップで発生した熱を金バンプを介して放熱させることで放熱性を向上させることができる。
【００２１】
請求項６の発明は、請求項４または請求項５の発明において、金属板の一表面上に絶縁層が形成され絶縁層上に導電パターンが形成された金属基板を備え、金属基板の導電パターンに前記発光ダイオード用パッケージの前記外部接続用電極がろう材を介して電気的に接続され、前記放熱用電極が金属基板の金属板にろう材を介して熱的に結合されてなることを特徴とする。
【００２２】
この発明によれば、前記放熱用電極と金属板とが熱的に結合されているので、金属板が前記発光ダイオードチップで発生した熱を外部へ放熱させる放熱部材として機能することになるから、放熱面積が広くなって放熱性をさらに向上させることができる。
【００２３】
【発明の実施の形態】
本実施形態の発光装置は、図１に示すように、発光ダイオードチップＡと、発光ダイオードチップＡを収納するパッケージ１と、パッケージ１が実装される実装基板たる金属基板２とを備えている。
【００２４】
発光ダイオードチップＡは、上述の図５に示した構成を有する青色発光ダイオードチップであり、サファイア基板４１の厚み方向の一表面（図５における下面）側に、バッファ層４２、ｎ形半導体層４３、発光層４４、ｐ形半導体層４５が順次形成されている。また、発光ダイオードチップＡは、ｎ形半導体層４３上にｎ電極（パッド）４８が設けられるとともに、ｐ形半導体層４５上に電流拡散膜４６を介してｐ電極（パッド）４７が設けられ、電流拡散膜４６が導電性を有し且つ反射率の高い金属材料により形成されており、発光層４４にて発光した光がサファイア基板４１を通して外部へ放射される。要するに、発光ダイオードチップＡは、サファイア基板４１の厚み方向の他表面（図５における上面）からなる裏面を光取り出し面としたものであって、パッケージ１にフリップチップ実装されている。なお、バッファ層４２、ｎ形半導体層４３、発光層４４、ｐ形半導体層４５は、それぞれ窒化ガリウム系の化合物半導体材料（例えば、ＧａＮ、ＩｎＧａＮなど）により形成されている。また、本実施形態における発光ダイオードチップＡはダブルへテロ構造を有しているが、発光ダイオードチップＡの構造は特に限定するものではなく、上述の電流拡散膜４６についても必ずしも設ける必要はない。
【００２５】
一方、実装基板２は、金属材料（例えば、Ａｌ，Ｃｕなどの高熱伝導性を有する金属材料）からなる金属板２１の一表面上に絶縁性材料（例えば、ガラスエポキシ樹脂などの絶縁性樹脂）からなる絶縁層２２が形成され、絶縁層２２上に銅箔からなる導電パターン（配線パターン）２３ａ，２３ｂが形成されている。
【００２６】
また、パッケージ１は、半導体基板たるシリコン基板１０を加工することにより形成されており、厚み方向の一面側に発光ダイオードチップＡを収納する収納凹所１１が形成されるとともに、他面側に金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなる外部接続用電極１５ａ，１５ｂおよび金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなる放熱用電極１５ｃが形成されている。
【００２７】
ここにおいて、パッケージ１は、収納凹所１１の内底面が平面状に形成されており、収納凹所１１の内底面に、発光ダイオードチップＡのパッド４７，４８を金バンプ３ａ，３ｂを介して電気的に接続する金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなるチップ接続用電極１３ａ，１３ｂが形成され、チップ接続用電極１３ａ，１３ｂと外部接続用電極１５ａ，１５ｂとを電気的に接続する金属材料（例えば、Ｗ、Ｃｕ、Ｎｉなど）からなる配線１６ａ，１６ｂがシリコン基板１０における収納凹所１１の内底面と上記他面との間の薄肉の部分からなる実装部１２に貫設されており、外部接続用電極１５ａ，１５ｂはろう材（半田など）からなる接合部３１ａ，３１ｂを介して金属基板２の導電パターン２３ａ，２３ｂと電気的に接続されている。
【００２８】
また、パッケージ１は、収納凹所１１の内底面にチップ接続用電極１３ａ，１３ｂと同じ金属材料からなる放熱用金属部１３ｃが形成され、放熱用金属部１３ｃと放熱用電極１５ｃとを熱的に結合する金属材料（例えば、Ｗ、Ｃｕ、Ｎｉなど）からなる熱結合部１６ｃが実装部１２に貫設されている。なお、発光ダイオードチップＡと放熱用金属部１３ｃとは発光ダイオードチップＡの表面に設けた金属電極（図示せず）と放熱用金属部１３ｃとの間に介在させた金バンプ３ｃを介して熱的に結合されている。
【００２９】
これに対して、金属基板２は、パッケージ１の放熱用電極１５ｃに対向する部位の絶縁層２２を開口して金属板２１の上記一表面の一部を露出させてあり、放電用電極１５ｃと金属板２１の上記一表面との間にろう材（例えば、半田など）からなる接合部３２を介在させてある。したがって、発光ダイオードチップＡが金バンプ３ｃ、放熱用金属部１３ｃ、熱結合部１６ｃ、放熱用電極１５ｃおよび接合部３２を介して金属板２１に熱的に結合されており、金属板２１が放熱部材として機能することになる（図１（ｂ）中の一点鎖線の矢印は、発光ダイオードチップＡで発生した熱の放熱経路を示している）。なお、本実施形態では、パッケージ１を実装する実装基板として金属基板２０を用いているが、リードフレームを用いるようにしてもよい。
【００３０】
また、パッケージ１における収納凹所１１は、シリコン基板１０の厚み方向において上記一面から上記内底面に近づくほど開口面積が小さくなっており（言い換えれば、パッケージ１における収納凹所１１は、実装部１２から離れるほど開口面積が大きくなっており）、収納凹所１１の内周面には反射率の高い金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなる反射膜１８が略全面に形成されている。なお、図示していないが、発光ダイオードチップＡをパッケージ１の実装部１２にフェースダウンで実装した後で、発光ダイオードチップＡから発光する光に対して透明な樹脂（例えば、エポキシ樹脂やシリコーン樹脂など）に収納凹所１１内の発光ダイオードチップＡを封止すれば、発光ダイオードチップＡを封止樹脂部にて保護することができる。ここに、発光ダイオードチップＡを封止する封止樹脂中に発光ダイオードチップＡの発光によって励起されて所望の波長の光を放射する蛍光物質を分散させておけば、発光ダイオードチップＡから放射される光と蛍光物質から放射される光との合成光を得ることができ、例えば白色光を得ることも可能となる。また、反射膜１８をチップ接続用電極１３ａ，１３ｂと同じ金属材料により形成するようにすれば、反射膜１８をチップ接続用電極１３ａ，１３ｂと同時に形成することができ、チップ接続用電極１３ａ，１３ｂを反射膜１８と同じ反射率の高い金属材料により形成することで、発光ダイオードチップＡから収納凹所１１の内底面側へ放射された光をチップ接続用電極１３ａ，１３ｂで反射させて収納凹所１１の外部へ取り出すことができる。
【００３１】
以下、本実施形態の発光装置の製造方法について図２を参照しながら説明する。
【００３２】
まず、図２（ａ）に示すようなシリコン基板１０に対して熱酸化処理を行うことによってシリコン基板１０の厚み方向の両面にシリコン酸化膜（図示せず）を形成してから、収納凹所１１を形成するためにシリコン基板１０の厚み方向の一面（図２（ａ）の上面）側のシリコン酸化膜をパターニングし、当該パターニングされたシリコン酸化膜をマスクとして、アルカリ系溶液（例えば、ＫＯＨ、ＴＭＡＨなど）を用いた異方性エッチングを行うことで収納凹所１１を形成し、その後、厚み方向の両面のシリコン酸化膜を除去することによって、図２（ｂ）に示す構造を得る。なお、シリコン基板１０に収納凹所１１を形成することにより、シリコン基板１０における収納凹所１１の内底面と上記他面との間に他の部位に比べて薄肉の実装部１２が形成される。
【００３３】
次に、リソグラフィ技術およびエッチング技術を利用して実装部１２のうち配線１６ａ，１６ｂおよび熱結合部１６ｃそれぞれの形成予定部位に貫通孔１２ａ（図３（ａ）参照）を形成してから、配線１６ａ，１６ｂおよび熱結合部１６ｃを形成することによって、図２（ｃ）に示す構造を得る。なお、配線１６ａの形成方法についてより詳しく説明すれば、図３（ａ）に示すように実装部１２における配線１６の形成予定部位に反応性イオンエッチング（ＲＩＥ）などにより貫通孔１２ａを形成した後、熱酸化処理を行うことで図３（ｂ）に示すようにシリコン基板１０の露出した部位および貫通孔１２ａの内周面にシリコン酸化膜からなる絶縁膜１２ｂを形成し、その後、配線１６ａの金属材料（例えば、Ｗ、Ｃｕ、Ｎｉなど）を溶融させて貫通孔１２ａ内へ充填することで図３（ｃ）に示すように配線１６ａを形成している。配線１６ｂおよび熱結合部１６ｃについても配線１６ａと同様の形成方法で配線１６ａと同時に形成している。
【００３４】
続いて、シリコン基板１０の上記他面側に外部接続用電極１５ａ，１５ｂおよび放熱用電極１５ｃを例えば蒸着法やスパッタ法などを利用して形成してから、シリコン基板１０における収納凹所１１の内底面に金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなるチップ接続用電極１３ａ，１３ｂおよび金属材料（例えば、Ａｌ、Ａｇ、Ｒｈなど）からなる放熱金属部１３ｃを例えば蒸着法やスパッタ法などを利用して形成するのと同時に収納凹所１１の内周面に金属材料（例えば、Ａｌなど）からなる反射膜１８を形成することによって、図２（ｄ）に示す構造のパッケージ１を完成させる。
【００３５】
次に、図４に示すように表面側に金バンプ３ａ，３ｂ，３ｃを形成した発光ダイオードチップＡを実装部１２へフリップチップ実装することによって、図２（ｅ）に示す構造を得る。なお、ここでは、発光ダイオードチップＡ側に金バンプ３ａ，３ｂ，３ｃを形成したが、実装部１２側にバンプ３ａ，３ｂ，３ｃを形成するようにしてもよい。
【００３６】
その後、ろう材（例えば、半田など）を用いてパッケージ１を金属基板２へ実装することによって、図２（ｆ）に示す構造の発光装置を完成させればよい。
【００３７】
以上説明した本実施形態の発光装置におけるパッケージ１では、シリコン基板１０の厚み方向の一面に発光ダイオードチップＡを収納する収納凹所１１が形成されるとともに、厚み方向の他面に外部接続用電極１５ａ，１５ｂが形成されているので、実装基板たる金属基板２への実装面積を小さくすることができ、しかも、収納凹所１１の内周面に反射膜１８が形成されているので、発光ダイオードチップＡから側方へ放射された光を反射膜１８により反射させて収納凹所１１の外部へ取り出すことが可能となり、発光ダイオードチップＡから側方へ放射された光が図６に示した従来例のようにパッケージ５で吸収されたり図７に示した従来例のように接着層６６で吸収されたりすることがなく、外部への光取り出し効率を向上可能となる。なお、図１（ｂ）中の実線の矢印は、発光ダイオードチップＡから放射された光の進行方向を示している。
【００３８】
また、本実施形態の発光装置では、上述のパッケージ１の収納凹所１１に収納した発光ダイオードチップＡが金属基板２の金属板２１に熱的に結合しているので、発光ダイオードチップＡの発光時（つまり、発光ダイオードチップＡへの通電時）に発生した熱が、金属板２１を通して放熱されるから、従来のようにセラミック基板５０を加工して形成したパッケージ５に発光ダイオードチップＡを実装したものに比べて放熱性が向上し、発光ダイオードチップＡの温度上昇を抑制でき、結果的に温度上昇に伴う発光ダイオードチップＡの発光効率の低下を抑制できる。また、発光ダイオードチップＡの温度上昇を抑制することで、発光ダイオードチップＡの寿命低下、発光ダイオードチップＡを封止している封止樹脂部の劣化を抑制することができ、長寿命化を図ることができる。
【００３９】
【発明の効果】
請求項１および請求項２の発明では、発光ダイオードチップを収納する収納凹所を厚み方向の一面側に形成した半導体基板の他面側に外部接続用電極を形成してあるので、実装基板への実装面積を小さくすることができるという効果があり、また、収納凹所の内周面に発光ダイオードチップからの光を反射する反射膜が形成されているので、発光ダイオードチップから側方へ放射された光を反射膜により反射させて収納凹所の外部へ取り出すことが可能となり、外部への光取り出し効率を向上可能となるという効果がある。
【００４０】
また、請求項２の発明では、前記発光ダイオードチップで発生した熱を放熱用電極を通して前記半導体基板の前記他面側から放熱させることができるので、放熱性が向上し、前記発光ダイオードチップの温度上昇を抑制でき、結果的に温度上昇に伴う前記発光ダイオードチップの発光効率の低下を抑制できるという効果がある。
【００４１】
請求項３の発明では、発光ダイオード用パッケージの前記外部接続用電極が前記半導体基板の厚み方向における前記他面側に形成されているので、実装基板に対する発光ダイオード用パッケージの実装面積を小さくすることができるという効果があり、また、発光ダイオードチップから側方へ放射された光が前記収納凹所の内周面に形成した前記反射膜で反射されて外部へ取り出されることになり、発光ダイオードチップで発光した光の外部への取り出し効率を向上させることができるという効果がある。
【００４２】
請求項４ないし請求項６の発明では、発光ダイオード用パッケージの前記外部接続用電極が前記半導体基板の厚み方向における前記他面側に形成されているので、実装基板に対する発光ダイオード用パッケージの実装面積を小さくすることができるという効果があり、また、発光ダイオードチップから側方へ放射された光が前記収納凹所の内周面に形成した前記反射膜で反射されて外部へ取り出されることになり、発光ダイオードチップで発光した光の外部への取り出し効率を向上させることができるという効果がある。しかも、発光ダイオードチップが前記半導体基板における前記他面側の前記放熱用電極と熱的に結合されているので、発光ダイオードチップで発生した熱を前記半導体基板における前記他面側の放熱用電極を通して放熱させることができ、放熱性が向上するという効果がある。
【００４３】
また、請求項５の発明では、前記発光ダイオードチップで発生した熱を金バンプを介して放熱させることで放熱性を向上させることができるという効果がある。
【００４４】
また、請求項６の発明では、前記放熱用電極と金属板とが熱的に結合されているので、金属板が前記発光ダイオードチップで発生した熱を外部へ放熱させる放熱部材として機能することになるから、放熱面積が広くなって放熱性をさらに向上させることができるという効果がある。
【図面の簡単な説明】
【図１】実施形態における発光装置を示し、（ａ）は概略平面図、（ｂ）は（ａ）のＡ−Ａ’断面図である。
【図２】同上における発光装置の製造方法を説明するための主要工程断面図である。
【図３】同上における発光装置の製造方法を説明するための主要工程断面図である。
【図４】同上における発光装置の製造方法の説明図である。
【図５】従来の発光ダイオードチップの一例を示す概略断面図である。
【図６】従来例を示す発光装置の概略断面図である。
【図７】他の従来例を示す発光装置の概略断面図である。
【符号の説明】
Ａ 発光ダイオードチップ
１ パッケージ
２ 金属基板
３ａ，３ｂ，３ｃ 金バンプ
１０ シリコン基板
１１ 収納凹所
１２ 実装部
１３ａ，１３ｂ チップ接続用電極
１３ｃ 放熱用金属部
１６ａ，１６ｂ 配線
１６ｃ 熱結合部
１５ａ，１５ｂ 外部接続用電極
１５ｃ 放熱用電極
１８ 反射膜
２１ 金属板
２２ 絶縁層
２３ａ，２３ｂ 導電パターン
３１ａ，３１ｂ 接合部
３２ 接合部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting diode package and a light emitting device using the same.
[0002]
[Prior art]
Conventionally, as shown in FIG. 5, a buffer layer 42, an n-type semiconductor layer 43, a light emitting layer 44, and a p-type semiconductor layer 45 are sequentially formed on one surface (lower surface in FIG. 5) in the thickness direction of the sapphire substrate 41. A light-emitting diode chip A is known (see, for example, Patent Document 1 and Patent Document 2). The light-emitting diode chip A includes an n-electrode (pad) 48 provided on the n-type semiconductor layer 43 and a p-electrode (pad) 47 provided on the p-type semiconductor layer 45 via a current diffusion film 46. The current diffusion film 46 is made of a metal material having conductivity and high reflectivity, and light emitted from the light emitting layer 44 is emitted to the outside through the sapphire substrate 41. In short, the light emitting diode chip A uses the back surface formed of the other surface (upper surface in FIG. 5) in the thickness direction of the sapphire substrate 41 as the light extraction surface.
[0003]
5 indicates the light emitted from the light emitting layer 44 to the n-type semiconductor layer 43 side and emitted to the outside through the light extraction surface of the sapphire substrate 41. The arrow R in FIG. The light reflected by the film 46 and emitted to the outside through the light extraction surface of the sapphire substrate 41 is shown, and an arrow L in the figure is totally reflected at the interface between the sapphire substrate 41 and the buffer layer 42 and becomes the light emitting layer 44. The light is reabsorbed. The buffer layer 42, the n-type semiconductor layer 43, the light emitting layer 44, and the p-type semiconductor layer 45 are each formed of a gallium nitride-based compound semiconductor material (for example, GaN, InGaN, etc.).
[0004]
By the way, as a light-emitting device provided with the above-mentioned light-emitting diode chip A, for example, those having the structure shown in FIG. 6 and those having the structure shown in FIG. 7 have been proposed.
[0005]
The light emitting device having the structure shown in FIG. 6 includes a light emitting diode chip A, a package (light emitting diode package) 5 containing the light emitting diode chip A, and a metal substrate 20 on which the package 5 is mounted. Here, in the package 5, a housing recess 51 for housing the light emitting diode chip A is formed on one surface in the thickness direction of the ceramic substrate 50, and the light emitting diode chip A is disposed on the inner bottom surface of the housing recess 51 via the bumps 3a and 3b. Chip connection electrodes 52a and 52b are formed so as to be electrically connected. That is, the light emitting diode chip A is flip-chip mounted on the package 5. The metal substrate 20 has an insulating layer 22 formed on one surface of the metal plate 21 and conductive patterns 23 a and 23 b formed on the insulating layer 22, and is provided between the package 5 and the insulating layer 22. The conductive layer 23a, 23b is electrically connected to the chip connection electrodes 52a, 52b via the bonding wires 57a, 57b. In the light emitting device having the structure shown in FIG. 6, the light emitted from the light emitting diode chip A is passed through a resin sealing portion (not shown) made of a sealing resin filled in the housing recess 51 (see FIG. 6). 6 on the upper surface side). The storage recess 51 is opened so that the opening area becomes smaller as it approaches the inner bottom surface.
[0006]
In the light emitting device having the structure shown in FIG. 7, the light emitting diode chip A is flip-chip mounted on the metal substrate 20, and the frame-shaped frame member 6 surrounding the light emitting diode chip A over the entire circumference is bonded with an adhesive. It is fixed to the metal substrate 20 via the layer 66. Here, the light emitting diode chip A is electrically connected to the conductive patterns 23a and 23b of the metal substrate 20 via the bumps 3a and 3b. In the light emitting device having the structure shown in FIG. 7, light emitted from the light emitting diode chip A passes through a resin sealing portion (not shown) made of a sealing resin filled inside the frame member 6 (front view side). 7 on the upper surface side). Here, the frame member 6 is opened so that the opening area becomes smaller as it approaches the metal substrate 20, and a reflective film 64 made of a metal material is formed on the inner peripheral surface. Therefore, in the light emitting device having the structure shown in FIG. 7, the light emitted from the light emitting diode chip A to the side can be reflected by the reflection film 64 and extracted to the front side.
[0007]
[Patent Document 1]
JP-A-11-220170
[Patent Document 2]
JP 2001-237458 A
[0008]
[Problems to be solved by the invention]
Incidentally, in the light emitting device having the structure shown in FIG. 6, it is necessary to bond one end portions of the bonding wires 57a and 57b to the chip connecting electrodes 52a and 52b, so that the area of the inner bottom surface of the housing recess 51 is relatively large. In addition, since it is necessary to secure a space for bonding the other ends of the bonding wires 57a and 57b in the metal substrate 20 as a mounting substrate on which the package 5 is mounted, the package 5 is mounted on the metal substrate 20. There was a problem that the area was relatively large.
[0009]
On the other hand, in the light emitting device having the structure shown in FIG. 7, it is necessary to fix the frame member 6 to the metal substrate 20 as the mounting substrate through the adhesive layer 66 made of an adhesive. Considering this, there was a problem that the mounting area was relatively large.
[0010]
In the light emitting device having the structure shown in FIG. 6, a part of the light emitted from the light emitting diode chip A to the side is absorbed by the package 5 made of the ceramic substrate, and the light emitting device having the structure shown in FIG. Then, since a part of the light emitted from the light emitting diode chip A to the side is absorbed by the adhesive layer 66, further improvement of the light extraction efficiency to the outside is desired in any light emitting device.
[0011]
The present invention has been made in view of the above reasons, and the main object of the invention of claim 1 and claim 2 is to reduce the mounting area on the mounting board and to improve the light extraction efficiency to the outside. SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode package capable of reducing the mounting area of the mounting substrate and improving the light extraction efficiency to the outside. There is.
[0012]
[Means for Solving the Problems]
According to the first aspect of the present invention, the closer to one surface of the semiconductor substrate in the thickness direction the closer to the other surface, the smaller the opening area is, and the housing recess for housing the light emitting diode chip is formed. A chip connection electrode is formed on the inner bottom surface of the housing recess to connect a light-emitting diode chip disposed face-down to face, and electrically connects the chip connection electrode and the external connection electrode. The wiring penetrates in the thickness direction of the mounting portion formed between the inner bottom surface of the housing recess and the other surface of the semiconductor substrate, and a reflective film made of a metal material is formed on the inner peripheral surface of the housing recess. It is characterized by becoming.
[0013]
According to the present invention, since the external connection electrode is formed on the other surface side of the semiconductor substrate in which the housing recess for housing the light emitting diode chip is formed on one surface side in the thickness direction, the mounting area on the mounting substrate is reduced. In addition, since a reflection film that reflects light from the light emitting diode chip is formed on the inner peripheral surface of the housing recess, the light emitted from the light emitting diode chip to the side is reflected by the reflection film. Thus, the light can be taken out of the storage recess, and the light extraction efficiency to the outside can be improved.
[0014]
In the invention of claim 2, a heat radiation electrode is formed on the other surface of the semiconductor substrate, and a heat radiation metal part is formed on the inner bottom surface of the housing recess. A thermal coupling portion made of a metal material that is thermally coupled is provided so as to penetrate in the thickness direction of the mounting portion.
[0015]
According to the present invention, the light-emitting diode chip housed in the housing recess is thermally coupled to the heat-dissipating metal part, so that the heat generated in the light-emitting diode chip passes through the heat-radiating electrode to the other surface of the semiconductor substrate. Since the heat can be radiated from the side, the heat dissipation is improved, the temperature rise of the light emitting diode chip can be suppressed, and as a result, the decrease in the light emission efficiency of the light emitting diode chip accompanying the temperature rise can be suppressed.
[0016]
According to a third aspect of the present invention, there is provided a light emitting diode package according to the first or second aspect, and a light emitting diode chip flip-chip mounted on the mounting portion in the housing recess of the light emitting diode package with a back surface as a light extraction surface. It is characterized by providing.
[0017]
According to this invention, since the external connection electrode of the light emitting diode package is formed on the other surface side in the thickness direction of the semiconductor substrate, the mounting area of the light emitting diode package on the mounting substrate can be reduced. In addition, the light emitted from the light emitting diode chip to the side is reflected by the reflective film formed on the inner peripheral surface of the housing recess and taken out to the outside. The efficiency of taking out to the outside can be improved.
[0018]
The invention of claim 4 comprises the light emitting diode package according to claim 2 and a light emitting diode chip flip-chip mounted on the mounting portion in the housing recess of the light emitting diode package with the back surface being a light extraction surface, A metal electrode connected to the metal part for heat dissipation is provided on the surface of the light emitting diode chip.
According to this invention, since the external connection electrode of the light emitting diode package is formed on the other surface side in the thickness direction of the semiconductor substrate, the mounting area of the light emitting diode package on the mounting substrate can be reduced. In addition, the light emitted from the light emitting diode chip to the side is reflected by the reflective film formed on the inner peripheral surface of the housing recess and taken out to the outside. The efficiency of taking out to the outside can be improved. In addition, since the light emitting diode chip is thermally coupled to the heat radiation electrode on the other surface side of the semiconductor substrate, the heat generated in the light emitting diode chip passes through the heat radiation electrode on the other surface side of the semiconductor substrate. The heat can be dissipated and the heat dissipation is improved.
[0019]
The invention of claim 5 is the invention of claim 4, wherein gold bumps are used for electrical connection between the light emitting diode chip and the chip connection electrode.
[0020]
According to this invention, the heat dissipation can be improved by dissipating the heat generated in the light emitting diode chip through the gold bumps.
[0021]
The invention of claim 6 is the invention of claim 4 or claim 5, further comprising a metal substrate having an insulating layer formed on one surface of the metal plate and a conductive pattern formed on the insulating layer, wherein the conductive pattern of the metal substrate is provided. The external connection electrode of the light emitting diode package is electrically connected via a brazing material, and the heat dissipation electrode is thermally coupled to the metal plate of the metal substrate via the brazing material. And
[0022]
According to this invention, since the heat dissipation electrode and the metal plate are thermally coupled, the metal plate functions as a heat dissipation member that radiates heat generated in the light emitting diode chip to the outside. The heat dissipation area can be widened to further improve heat dissipation.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
As shown in FIG. 1, the light emitting device of the present embodiment includes a light emitting diode chip A, a package 1 that houses the light emitting diode chip A, and a metal substrate 2 that is a mounting substrate on which the package 1 is mounted.
[0024]
The light-emitting diode chip A is a blue light-emitting diode chip having the configuration shown in FIG. 5 described above. A buffer layer 42 and an n-type semiconductor layer 43 are formed on one surface (the lower surface in FIG. 5) of the sapphire substrate 41 in the thickness direction. The light emitting layer 44 and the p-type semiconductor layer 45 are sequentially formed. The light-emitting diode chip A includes an n-electrode (pad) 48 provided on the n-type semiconductor layer 43 and a p-electrode (pad) 47 provided on the p-type semiconductor layer 45 via a current diffusion film 46. The current diffusion film 46 is made of a metal material having conductivity and high reflectivity, and light emitted from the light emitting layer 44 is emitted to the outside through the sapphire substrate 41. In short, the light-emitting diode chip A has a back surface made of the other surface (upper surface in FIG. 5) in the thickness direction of the sapphire substrate 41 as a light extraction surface, and is flip-chip mounted on the package 1. The buffer layer 42, the n-type semiconductor layer 43, the light emitting layer 44, and the p-type semiconductor layer 45 are each formed of a gallium nitride-based compound semiconductor material (for example, GaN, InGaN, etc.). Further, although the light-emitting diode chip A in the present embodiment has a double hetero structure, the structure of the light-emitting diode chip A is not particularly limited, and the above-described current diffusion film 46 is not necessarily provided.
[0025]
On the other hand, the mounting substrate 2 has an insulating material (for example, an insulating resin such as a glass epoxy resin) on one surface of a metal plate 21 made of a metal material (for example, a metal material having high thermal conductivity such as Al or Cu). An insulating layer 22 made of copper is formed, and conductive patterns (wiring patterns) 23 a and 23 b made of copper foil are formed on the insulating layer 22.
[0026]
The package 1 is formed by processing a silicon substrate 10 which is a semiconductor substrate. A storage recess 11 for storing the light-emitting diode chip A is formed on one surface side in the thickness direction, and a metal is formed on the other surface side. External connection electrodes 15a and 15b made of a material (for example, Al, Ag, Rh, etc.) and a heat radiation electrode 15c made of a metal material (for example, Al, Ag, Rh, etc.) are formed.
[0027]
Here, in the package 1, the inner bottom surface of the housing recess 11 is formed in a flat shape, and the pads 47 and 48 of the light emitting diode chip A are placed on the inner bottom surface of the housing recess 11 via the gold bumps 3a and 3b. Chip connection electrodes 13a and 13b made of an electrically connected metal material (for example, Al, Ag, Rh, etc.) are formed, and the chip connection electrodes 13a and 13b and the external connection electrodes 15a and 15b are electrically connected. Wirings 16 a and 16 b made of a metal material to be connected (for example, W, Cu, Ni, etc.) penetrate through the mounting portion 12 made of a thin portion between the inner bottom surface of the housing recess 11 and the other surface in the silicon substrate 10. The external connection electrodes 15a and 15b are electrically connected to the conductive patterns 23a and 23b of the metal substrate 2 through joint portions 31a and 31b made of brazing material (solder or the like). To have.
[0028]
Further, in the package 1, a heat radiating metal portion 13c made of the same metal material as the chip connecting electrodes 13a and 13b is formed on the inner bottom surface of the housing recess 11, and the heat radiating metal portion 13c and the heat radiating electrode 15c are thermally connected. A thermal coupling portion 16 c made of a metal material (for example, W, Cu, Ni, etc.) that couples to the mounting portion 12 is provided through the mounting portion 12. The light emitting diode chip A and the heat radiating metal portion 13c are heated via a gold bump 3c interposed between a metal electrode (not shown) provided on the surface of the light emitting diode chip A and the heat radiating metal portion 13c. Combined.
[0029]
On the other hand, the metal substrate 2 has the insulating layer 22 at a portion facing the heat radiation electrode 15c of the package 1 opened to expose a part of the one surface of the metal plate 21, and the discharge electrode 15c and A joint portion 32 made of a brazing material (for example, solder) is interposed between the metal plate 21 and the one surface. Therefore, the light emitting diode chip A is thermally coupled to the metal plate 21 via the gold bump 3c, the heat radiating metal portion 13c, the heat coupling portion 16c, the heat radiating electrode 15c, and the joining portion 32, and the metal plate 21 radiates heat. It functions as a member (the dashed-dotted arrow in FIG. 1B indicates the heat dissipation path of the heat generated in the light-emitting diode chip A). In the present embodiment, the metal substrate 20 is used as the mounting substrate on which the package 1 is mounted. However, a lead frame may be used.
[0030]
Further, the storage recess 11 in the package 1 has a smaller opening area as it approaches the inner bottom surface from the one surface in the thickness direction of the silicon substrate 10 (in other words, the storage recess 11 in the package 1 has the mounting portion 12. The reflective area 18 made of a highly reflective metal material (for example, Al, Ag, Rh, etc.) is formed on the inner peripheral surface of the storage recess 11 on the substantially entire surface. Yes. Although not shown, after the light-emitting diode chip A is mounted face-down on the mounting portion 12 of the package 1, a resin transparent to light emitted from the light-emitting diode chip A (for example, epoxy resin or silicone resin). If the light emitting diode chip A in the housing recess 11 is sealed, the light emitting diode chip A can be protected by the sealing resin portion. If a fluorescent material excited by light emission of the light emitting diode chip A and emitting light of a desired wavelength is dispersed in a sealing resin for sealing the light emitting diode chip A, the light emitted from the light emitting diode chip A is dispersed. For example, white light can be obtained. If the reflective film 18 is formed of the same metal material as the chip connecting electrodes 13a and 13b, the reflective film 18 can be formed simultaneously with the chip connecting electrodes 13a and 13b. 13b is formed of a metal material having the same reflectivity as that of the reflective film 18, and the light emitted from the light emitting diode chip A toward the inner bottom surface of the housing recess 11 is reflected by the chip connection electrodes 13a and 13b and stored. It can be taken out of the recess 11.
[0031]
Hereinafter, a method for manufacturing the light emitting device of this embodiment will be described with reference to FIG.
[0032]
First, a silicon oxide film (not shown) is formed on both sides in the thickness direction of the silicon substrate 10 by performing thermal oxidation on the silicon substrate 10 as shown in FIG. 11 is patterned, a silicon oxide film on one surface in the thickness direction of the silicon substrate 10 (upper surface in FIG. 2A) is patterned, and an alkaline solution (for example, KOH) is formed using the patterned silicon oxide film as a mask. The storage recess 11 is formed by performing anisotropic etching using TMAH, etc., and then the silicon oxide film on both sides in the thickness direction is removed to obtain the structure shown in FIG. In addition, by forming the storage recess 11 in the silicon substrate 10, a thinner mounting portion 12 is formed between the inner bottom surface of the storage recess 11 in the silicon substrate 10 and the other surface as compared with other portions. .
[0033]
Next, through holes 12a (see FIG. 3 (a)) are formed in the portions to be formed in the wirings 16a and 16b and the thermal coupling part 16c in the mounting part 12 by using the lithography technique and the etching technique. By forming 16a, 16b and the thermal coupling part 16c, the structure shown in FIG. 2C is obtained. In more detail, the method for forming the wiring 16a will be described after the through-hole 12a is formed by reactive ion etching (RIE) or the like at the site where the wiring 16 is to be formed in the mounting portion 12 as shown in FIG. By performing thermal oxidation, an insulating film 12b made of a silicon oxide film is formed on the exposed portion of the silicon substrate 10 and the inner peripheral surface of the through hole 12a as shown in FIG. A metal material (for example, W, Cu, Ni, etc.) is melted and filled into the through hole 12a, thereby forming the wiring 16a as shown in FIG. The wiring 16b and the thermal coupling portion 16c are also formed at the same time as the wiring 16a by the same formation method as the wiring 16a.
[0034]
Subsequently, the external connection electrodes 15a and 15b and the heat radiation electrode 15c are formed on the other surface side of the silicon substrate 10 by using, for example, a vapor deposition method or a sputtering method, and then the storage recess 11 in the silicon substrate 10 is formed. Chip connection electrodes 13a and 13b made of a metal material (for example, Al, Ag, Rh, etc.) and a heat radiating metal portion 13c made of a metal material (for example, Al, Ag, Rh, etc.) are formed on the inner bottom surface by, for example, vapor deposition or sputtering. 2 is formed on the inner peripheral surface of the storage recess 11 at the same time, thereby forming the package 1 having the structure shown in FIG. Finalize.
[0035]
Next, as shown in FIG. 4, the structure shown in FIG. 2E is obtained by flip-chip mounting the light-emitting diode chip A having the gold bumps 3 a, 3 b, 3 c on the surface side to the mounting portion 12. Here, the gold bumps 3a, 3b, 3c are formed on the light emitting diode chip A side, but the bumps 3a, 3b, 3c may be formed on the mounting portion 12 side.
[0036]
Thereafter, the package 1 is mounted on the metal substrate 2 using a brazing material (for example, solder) to complete the light emitting device having the structure shown in FIG.
[0037]
In the package 1 in the light emitting device of the present embodiment described above, the housing recess 11 for housing the light emitting diode chip A is formed on one surface of the silicon substrate 10 in the thickness direction, and the external connection electrode is formed on the other surface in the thickness direction. Since 15a and 15b are formed, the mounting area on the metal substrate 2 as the mounting substrate can be reduced, and the reflection film 18 is formed on the inner peripheral surface of the housing recess 11, so that the light emitting diode The light radiated laterally from the chip A can be reflected by the reflection film 18 and taken out of the housing recess 11, and the light radiated laterally from the light emitting diode chip A is shown in FIG. It is not absorbed by the package 5 as in the example or absorbed by the adhesive layer 66 as in the conventional example shown in FIG. 7, and the light extraction efficiency to the outside can be improved. In addition, the solid line arrow in FIG.1 (b) has shown the advancing direction of the light radiated | emitted from the light emitting diode chip A. FIG.
[0038]
Further, in the light emitting device of this embodiment, the light emitting diode chip A housed in the housing recess 11 of the package 1 is thermally coupled to the metal plate 21 of the metal substrate 2, so that the light emitting diode chip A emits light. Since the heat generated at the time (that is, when the light emitting diode chip A is energized) is dissipated through the metal plate 21, the light emitting diode chip A is mounted on the package 5 formed by processing the ceramic substrate 50 as in the prior art. As compared with the above, the heat dissipation is improved, the temperature rise of the light emitting diode chip A can be suppressed, and as a result, the decrease in the light emission efficiency of the light emitting diode chip A accompanying the temperature rise can be suppressed. Moreover, by suppressing the temperature rise of the light-emitting diode chip A, the life of the light-emitting diode chip A can be reduced, and the deterioration of the sealing resin portion sealing the light-emitting diode chip A can be suppressed. Can be planned.
[0039]
【The invention's effect】
In the first and second aspects of the invention, since the external connection electrode is formed on the other surface side of the semiconductor substrate in which the housing recess for housing the light emitting diode chip is formed on the one surface side in the thickness direction, The mounting area of the light emitting diode can be reduced, and a reflection film for reflecting light from the light emitting diode chip is formed on the inner peripheral surface of the housing recess. The reflected light can be reflected by the reflective film and taken out to the outside of the storage recess, and the light extraction efficiency to the outside can be improved.
[0040]
In the invention of claim 2, since the heat generated in the light emitting diode chip can be dissipated from the other surface side of the semiconductor substrate through the heat radiating electrode, heat dissipation is improved, and the temperature of the light emitting diode chip is improved. As a result, it is possible to suppress the increase, and as a result, it is possible to suppress the decrease in the light emission efficiency of the light emitting diode chip accompanying the temperature increase.
[0041]
In the invention of claim 3, since the external connection electrode of the light emitting diode package is formed on the other surface side in the thickness direction of the semiconductor substrate, the mounting area of the light emitting diode package on the mounting substrate is reduced. The light emitted from the light emitting diode chip to the side is reflected by the reflection film formed on the inner peripheral surface of the housing recess and taken out to the outside. As a result, it is possible to improve the extraction efficiency of the light emitted from the outside.
[0042]
According to the fourth to sixth aspects of the present invention, since the external connection electrode of the light emitting diode package is formed on the other surface side in the thickness direction of the semiconductor substrate, the mounting area of the light emitting diode package with respect to the mounting substrate In addition, the light emitted from the light emitting diode chip to the side is reflected by the reflective film formed on the inner peripheral surface of the housing recess and taken out to the outside. There is an effect that the efficiency of taking out the light emitted from the light emitting diode chip to the outside can be improved. In addition, since the light emitting diode chip is thermally coupled to the heat radiation electrode on the other surface side of the semiconductor substrate, the heat generated in the light emitting diode chip passes through the heat radiation electrode on the other surface side of the semiconductor substrate. It is possible to dissipate heat, and there is an effect that heat dissipation is improved.
[0043]
Further, the invention of claim 5 has an effect that heat dissipation can be improved by dissipating the heat generated in the light emitting diode chip through the gold bumps.
[0044]
In the invention of claim 6, since the heat radiation electrode and the metal plate are thermally coupled, the metal plate functions as a heat radiation member for radiating heat generated in the light emitting diode chip to the outside. Therefore, there is an effect that the heat dissipation area can be widened to further improve the heat dissipation.
[Brief description of the drawings]
1A and 1B show a light-emitting device according to an embodiment, in which FIG. 1A is a schematic plan view, and FIG. 1B is a cross-sectional view taken along line AA ′ of FIG.
FIG. 2 is a main process sectional view for explaining the manufacturing method of the light emitting device according to the embodiment;
FIG. 3 is a cross-sectional view of main steps for explaining the method for manufacturing the light emitting device according to the first embodiment.
FIG. 4 is an explanatory diagram of the manufacturing method of the light emitting device according to the above.
FIG. 5 is a schematic cross-sectional view showing an example of a conventional light emitting diode chip.
FIG. 6 is a schematic cross-sectional view of a light emitting device showing a conventional example.
FIG. 7 is a schematic cross-sectional view of a light emitting device showing another conventional example.
[Explanation of symbols]
A Light emitting diode chip
1 package
2 Metal substrate
3a, 3b, 3c Gold bump
10 Silicon substrate
11 Storage recess
12 Mounting part
13a, 13b Chip connection electrodes
13c Metal part for heat dissipation
16a, 16b wiring
16c Thermal coupling part
15a, 15b External connection electrode
15c Heat dissipation electrode
18 Reflective film
21 Metal plate
22 Insulating layer
23a, 23b conductive pattern
31a, 31b joint
32 joints

Claims (6)

半導体基板の厚み方向の一面に他面に近づくほど開口面積が小さくなり発光ダイオードチップを収納する収納凹所が形成されるとともに、半導体基板の上記他面側に外部接続用電極が形成され、収納凹所の内底面にフェースダウンで対向配置される発光ダイオードチップを接続するチップ接続用電極が形成され、チップ接続用電極と外部接続用電極とを電気的に接続する配線が半導体基板における収納凹所の内底面と前記他面との間の部分からなる実装部の厚み方向に貫設され、収納凹所の内周面に金属材料からなる反射膜が形成されてなることを特徴とする発光ダイオード用パッケージ。The closer to one surface in the thickness direction of the semiconductor substrate the closer to the other surface, the smaller the opening area becomes, and a storage recess for storing the light emitting diode chip is formed, and an external connection electrode is formed on the other surface side of the semiconductor substrate for storage. Chip connection electrodes are formed on the inner bottom surface of the recesses to connect the light-emitting diode chips arranged face-down to face each other, and wirings for electrically connecting the chip connection electrodes and the external connection electrodes are provided in the storage recesses in the semiconductor substrate. A light emitting device characterized in that a reflective film made of a metal material is formed on the inner peripheral surface of the housing recess, penetrating in the thickness direction of the mounting portion consisting of a portion between the inner bottom surface and the other surface. Package for diode. 前記半導体基板における前記他面に放熱用電極が形成されるとともに、前記収納凹所の内底面に放熱用金属部が形成され、放熱用金属部と放熱用電極とを熱的に結合する金属材料からなる熱結合部が前記実装部の厚み方向に貫設されてなることを特徴とする請求項１記載の発光ダイオード用パッケージ。A metal material for forming a heat dissipation electrode on the other surface of the semiconductor substrate and a heat dissipation metal portion on the inner bottom surface of the housing recess to thermally couple the heat dissipation metal portion and the heat dissipation electrode. The light-emitting diode package according to claim 1, wherein a thermal coupling portion made of is formed so as to penetrate in a thickness direction of the mounting portion. 請求項１または請求項２記載の発光ダイオード用パッケージと、裏面を光取り出し面とし発光ダイオード用パッケージの前記収納凹所内で前記実装部にフリップチップ実装された発光ダイオードチップとを備えることを特徴とする発光装置。A light-emitting diode package according to claim 1 or 2, and a light-emitting diode chip flip-chip mounted on the mounting portion in the housing recess of the light-emitting diode package with a back surface as a light extraction surface. Light-emitting device. 請求項２記載の発光ダイオード用パッケージと、裏面を光取出し面とし発光ダイオード用パッケージの前記収納凹所内で前記実装部にフリップチップ実装された発光ダイオードチップとを備え、発光ダイオードチップの表面に前記放熱用金属部と接続される金属電極が設けられてなることを特徴とする発光装置。A light emitting diode package according to claim 2, and a light emitting diode chip flip-chip mounted on the mounting portion in the housing recess of the light emitting diode package with a back surface as a light extraction surface, the light emitting diode chip on the surface of the light emitting diode chip A light-emitting device comprising a metal electrode connected to a heat-dissipating metal part. 前記発光ダイオードチップと前記チップ接続用電極との電気的な接続に金バンプを用いてなることを特徴とする請求項４記載の発光装置。5. The light emitting device according to claim 4, wherein gold bumps are used for electrical connection between the light emitting diode chip and the chip connection electrode. 金属板の一表面上に絶縁層が形成され絶縁層上に導電パターンが形成された金属基板を備え、金属基板の導電パターンに前記発光ダイオード用パッケージの前記外部接続用電極がろう材を介して電気的に接続され、前記放熱用電極が金属基板の金属板にろう材を介して熱的に結合されてなることを特徴とする請求項４または請求項５記載の発光装置。A metal substrate having an insulating layer formed on one surface of the metal plate and a conductive pattern formed on the insulating layer is provided, and the external connection electrode of the light emitting diode package is connected to the conductive pattern of the metal substrate via a brazing material. 6. The light emitting device according to claim 4, wherein the light emitting device is electrically connected, and the heat radiation electrode is thermally coupled to a metal plate of a metal substrate via a brazing material.
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